阅读说明：本技术 一种单片晶圆测试多台设备的方法 (Method for testing multiple devices by single wafers ) 是由 吴恋伟 林元鼎 邓丹丹 郭文海 翁佩雪 赵玉会 林锦伟 于 2019-09-09 设计创作，主要内容包括：本发明公开了一种单片晶圆测试多台设备的方法,包括以下步骤：应力测试仪对裸硅晶圆进行应力前置测试,获取前置应力值；将裸硅晶圆置入化学气相沉积设备中,对应力测试后的裸硅晶圆沉积氮化硅,膜厚测试仪对沉积氮化硅的硅晶圆进行膜厚和折射率测试,获取氮化硅膜厚和折射率作为化学气相沉积设备测机参数,以及应力测试仪对沉积氮化硅的硅晶圆进行后置应力测试,获取第一后置应力值。本方案省去多道传统检测工艺步骤,简化测机工艺流程,缩短了检测周期,减少测机片的使用,提高检测效率。(The invention discloses a method for testing multiple devices by single wafers, which comprises the following steps of performing stress prepositive test on a bare silicon wafer by a stress tester to obtain a prepositive stress value, placing the bare silicon wafer into chemical vapor deposition equipment to deposit silicon nitride on the bare silicon wafer after the stress test, performing film thickness and refractive index test on the silicon wafer on which the silicon nitride is deposited by a film thickness tester to obtain the film thickness and the refractive index of the silicon nitride as test parameters of the chemical vapor deposition equipment, and performing postpositive stress test on the silicon wafer on which the silicon nitride is deposited by the stress tester to obtain a postpositive stress value.)

The method for testing a plurality of devices by using the single wafers of types is characterized by comprising the following steps:

the stress tester conducts stress preposition test on the bare silicon wafer to obtain a preposed stress value;

placing the bare silicon wafer into chemical vapor deposition equipment, depositing silicon nitride on the bare silicon wafer after stress testing, testing the film thickness and the refractive index of the silicon wafer on which the silicon nitride is deposited by a film thickness tester to obtain the film thickness and the refractive index of the silicon nitride as testing parameters of the chemical vapor deposition equipment, and testing the post stress of the silicon wafer on which the silicon nitride is deposited by a stress tester to obtain a th post stress value;

placing the tested silicon wafer with the silicon nitride into helium ion implantation equipment;

and carrying out helium ion implantation on the silicon wafer with the silicon nitride, testing the silicon nitride after the helium ion implantation by using a stress tester to obtain a second post stress value, and taking the th post stress value and the second post stress value as helium ion implantation equipment testing parameters.

2. The method for testing multiple devices on wafers as claimed in claim 1, further comprising the steps of:

placing the silicon wafer with the silicon nitride after the helium ion implantation into metal deposition equipment;

and performing metal deposition on the silicon wafer with the silicon nitride after the helium ion implantation by using metal deposition equipment, testing the deposited metal film by using a resistance tester to obtain the th resistance value on the surface of the metal film, and taking the th resistance value on the surface of the metal film as a testing machine parameter of the metal deposition equipment.

3. The method for testing multiple devices on wafers as claimed in claim 2, further comprising the steps of:

and placing the silicon wafer with the metal film after the metal deposition equipment testing is finished into tempering equipment for high-temperature tempering, testing the silicon wafer with the tempered metal film by using a resistance tester to obtain a second resistance value on the surface of the tempered metal film, and taking the th resistance value and the second resistance value as testing parameters of the tempering equipment.

4. The method for testing multiple devices on wafers as claimed in claim 3, further comprising the steps of:

and placing the silicon wafer with the tempered metal film into wet metal etching equipment for etching in an etching solution in a soaking way, testing the resistance of the metal film after etching in the soaking way by using a resistance tester to obtain a third resistance value of the surface of the etched metal film, and taking the second resistance value and the third resistance value as testing parameters of the wet metal etching equipment.

Technical Field

The invention relates to the field of semiconductor detection, in particular to a method for testing multiple devices by using single wafers.

Background

In the semiconductor manufacturing field, every equipments need to pass through a tester before production to identify whether the equipments can normally operate and avoid the generation of waste chips, the tester of the equipments prepares a dedicated test chip operation for each equipment, and after the operation is completed, the relevant characteristic value is measured by using the tester to see whether the characteristic value is in a range of so as to identify whether each equipment normally operates, but the process needs to use a plurality of different test chips to respectively test different equipments, so the industry searches methods for testing a plurality of equipments by using a single wafer.

Disclosure of Invention

Therefore, methods for testing multiple devices by using single wafers are needed to solve the problems of complex operation and high cost caused by testing different devices by using multiple test pieces.

To achieve the above object, the inventors provide methods for testing multiple devices on a single wafer, comprising the steps of:

the stress tester conducts stress preposition test on the bare silicon wafer to obtain a preposed stress value;

placing the bare silicon wafer into chemical vapor deposition equipment, depositing silicon nitride on the bare silicon wafer after stress testing, testing the film thickness and the refractive index of the silicon wafer on which the silicon nitride is deposited by a film thickness tester to obtain the film thickness and the refractive index of the silicon nitride as testing parameters of the chemical vapor deposition equipment, and testing the post stress of the silicon wafer on which the silicon nitride is deposited by a stress tester to obtain a th post stress value;

placing the tested silicon wafer with the silicon nitride into helium ion implantation equipment;

and carrying out helium ion implantation on the silicon wafer with the silicon nitride, testing the silicon nitride after the helium ion implantation by using a stress tester to obtain a second post stress value, and taking the th post stress value and the second post stress value as helium ion implantation equipment testing parameters.

, the method also includes the following steps:

placing the silicon wafer with the silicon nitride after the helium ion implantation into metal deposition equipment;

the metal deposition equipment performs metal deposition on a silicon wafer with silicon nitride after helium ion implantation, the resistance tester tests the deposited metal film to obtain the th resistance value on the surface of the metal film, and the th resistance value on the surface of the metal film is used as the machine testing parameter of the metal deposition equipment;

, the method also includes the following steps:

and placing the silicon wafer with the metal film after the metal deposition equipment testing is finished into tempering equipment for high-temperature tempering, testing the silicon wafer with the tempered metal film by using a resistance tester to obtain a second resistance value on the surface of the tempered metal film, and taking the th resistance value and the second resistance value as testing parameters of the tempering equipment.

, the method also includes the following steps:

and placing the silicon wafer with the tempered metal film into wet metal etching equipment for etching in an etching solution in a soaking way, testing the resistance of the metal film after etching in the soaking way by using a resistance tester to obtain a third resistance value of the surface of the etched metal film, and taking the second resistance value and the third resistance value as testing parameters of the wet metal etching equipment.

The method is characterized in that a stress tester is adopted to perform stress preposition test on a bare silicon wafer to obtain a preposed stress value, then the bare silicon wafer is placed in chemical vapor deposition equipment, after silicon nitride is deposited on the bare silicon wafer, the thickness and the refractive index of the silicon nitride are obtained and are used as testing parameters of the chemical vapor deposition equipment, a postpositional stress value is obtained, whether the chemical vapor deposition equipment can normally operate is detected through the film thickness and refractive index parameters, then the silicon wafer with the silicon nitride after the test is placed in helium ion implantation equipment, a second postpositional stress value is obtained, the postpositional stress value and the second postpositional stress value are used as testing parameters of the helium ion implantation equipment to test whether the helium ion implantation equipment can normally operate, a test piece completed by the chemical vapor deposition equipment testing machine replaces a low-resistance test piece, the effect of the silicon nitride stress change is detected in a mode, and the use of piece test is reduced, so that the detection process steps are omitted, the testing process is simplified, the use period of the machine is shortened, the use efficiency of a plurality of the test piece is improved, and the use efficiency of the test piece is improved.

Drawings

FIG. 1 is a flow chart of an embodiment of an apparatus for detecting chemical vapor deposition and helium ion implantation;

FIG. 2 is a flow chart of an apparatus for detecting metal deposition in accordance with an embodiment;

FIG. 3 is a flow chart of the flashback-detecting apparatus according to an embodiment;

fig. 4 is a flowchart illustrating the method of detecting wet metal etching equipment according to an embodiment of the present invention.

Description of reference numerals:

1. a chemical vapor deposition apparatus;

2. a bare silicon wafer;

3. a stress tester;

4. a film thickness tester;

5. silicon nitride;

6. a helium ion implantation apparatus;

7. a metal deposition device;

8. a resistance tester;

9. a metal thin film;

10. tempering equipment;

11. a tempered metal thin film;

12. a wet metal etching apparatus;

13. and (5) etching the metal film.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1, the embodiment provides a method for testing multiple devices by using single wafers, which can be applied to an automatic machine control device, the machine control device can control a wafer processing and manufacturing instrument, control a test instrument and convey a wafer, and a controller of the machine control device can operate the method, and the method includes the following steps of firstly performing a stress pre-test on a bare silicon wafer 2 by a stress tester 3 to obtain a pre-stress value, placing the bare silicon wafer 2 into a chemical vapor deposition device 1 to deposit silicon nitride 5 on the bare silicon wafer 2 after the stress test, performing a film thickness test and a refractive index test on the silicon wafer on which the silicon nitride 5 is deposited by a film thickness tester 4 to obtain a film thickness and a refractive index of the silicon nitride 5 as test parameters of the chemical vapor deposition device 1, performing a post-stress test on the silicon wafer on which the silicon nitride 5 is deposited by the stress tester 3 to obtain a post-stress value , detecting whether the chemical vapor deposition device 1 can normally operate by the film thickness and refractive index parameters, and detecting whether the silicon ion implantation test device 1 can normally operate by using the film thickness and refractive index parameters to detect helium ion implantation parameters after the silicon wafer implantation test, so as to reduce the helium ion implantation test efficiency of the helium ion implantation test device, and reduce the helium ion implantation test process, and reduce the helium ion implantation test efficiency of the helium ion implantation test device after the helium test process, so as to detect the helium ion implantation test process.

Referring to fig. 2, in the present embodiment, the method further includes the steps of placing the silicon wafer with the silicon nitride 5 after the helium ion implantation into the metal deposition device 7, performing metal deposition on the silicon wafer with the silicon nitride 5 after the helium ion implantation by the metal deposition device 7, testing the deposited metal film 9 by the resistance tester 8 to obtain the th resistance value on the surface of the metal film 9, and using the th resistance value on the surface of the metal film 9 as the test parameter of the metal deposition device 7.

Referring to fig. 3, in the present embodiment, the method further includes the steps of placing the silicon wafer with the metal thin film 9 after the testing of the metal deposition device 7 is completed into the tempering device 10 for high temperature tempering, testing the silicon wafer with the tempered metal thin film 11 by the resistance tester 8 to obtain a second resistance value on the surface of the tempered metal thin film 11, and using the th resistance value and the second resistance value as testing parameters of the tempering device 10 to detect whether the tempering device 10 can normally operate, placing the silicon wafer with the metal thin film 9 into the tempering device 10 to replace a special testing sheet used in a conventional tempering testing machine, thereby saving the use of testing machine sheets, and simultaneously, using the th resistance value after the testing of the metal deposition device 7 is completed as a device parameter before high temperature tempering to replace a pre-set resistance testing parameter in the testing machine, and comparing the pre-set resistance testing parameter with the second resistance value parameter measured by the resistance tester 8 after tempering, thereby reducing testing steps, thereby achieving the purposes of reducing operation difficulty, improving testing efficiency, and saving cost.

Referring to fig. 4, in the present embodiment, the method further includes the steps of placing the silicon wafer with the tempered metal thin film 11 into a wet metal etching device 12 for immersion etching, performing a resistance test on the metal thin film 13 after immersion etching by using a resistance tester 8 to obtain a third resistance value of the surface of the etched metal thin film 13, using the second resistance value and the third resistance value as testing parameters of the wet metal etching device 12, and converting the third resistance value into a thickness of the metal thin film to detect whether the wet metal etching device 12 meets a normal operation standard, wherein the silicon wafer with the metal thin film after tempering can replace a test chip dedicated for the conventional wet metal etching device 12, so that test chips are saved, and the resistance test after high temperature tempering is equivalent to a pre-resistance test during testing the wet metal etching device 12, compared with the conventional test chip, test chips are reduced, so as to achieve the purposes of reducing operation difficulty, improving test efficiency and saving cost.

It should be noted that, the present invention, through studying the influence of the machine testing piece after the machine testing of the device is put into other devices, through the detection of the detection device, and summarizing the rule, is used to replace the machine testing piece of other devices, and the machine testing mode of the corresponding machine can be changed as necessary, thereby realizing the single-chip silicon wafer testing of multiple devices, through studying, CVD (chemical vapor deposition device), helium ion implanter, sputter (metal deposition device), tempering device 10, wet metal etching machine, these devices have been studied, and the testing of these devices can be completed by using the single-chip wafer to flow in the order of .

Although the above embodiments have been described herein, the scope of the present invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.