阅读说明：本技术 刻蚀反应设备及刻蚀方法 (Etching reaction equipment and etching method ) 是由 邱宇渊 于 2019-10-10 设计创作，主要内容包括：本申请公开了一种刻蚀反应设备。刻蚀反应设备用于刻蚀目标物。刻蚀反应设备包括反应腔体、基座及控制器；反应腔体用于容纳刻蚀介质,刻蚀介质用于刻蚀目标物,基座位于反应腔体内,基座用于承载目标物；控制器用于控制基座相对反应腔体旋转。本申请提供的刻蚀反应设备能够解决因刻蚀介质分布不均匀,而导致目标物刻蚀不均一的问题。本申请还提供一种刻蚀方法。(The application discloses etching reaction equipment, which is used for etching a target object and comprises a reaction cavity, a base and a controller, wherein the reaction cavity is used for containing an etching medium, the etching medium is used for etching the target object, the base is positioned in the reaction cavity and used for bearing the target object, and the controller is used for controlling the base to rotate relative to the reaction cavity.)

etching reaction equipment for etching a target object, and is characterized by comprising a reaction cavity, a base and a controller, wherein the reaction cavity is used for containing an etching medium, the etching medium is used for etching the target object, the base is located in the reaction cavity and used for bearing the target object, and the controller is used for controlling the base to rotate relative to the reaction cavity.

2. The etching reaction apparatus of claim 1, wherein the controller controls the rotation speed of the susceptor relative to the reaction chamber to be in a range of 200rpm to 2000 rpm.

3. The etching reaction apparatus according to claim 1, wherein the controller controls the susceptor to rotate at a constant speed at a preset rotation speed after controlling the susceptor to accelerate to the preset rotation speed.

4. The etching reaction device of claim 1, further comprising a plurality of rotating shafts fixed to the susceptor and spaced apart from each other, wherein the controller is configured to control of the rotating shafts to rotate according to a position of the target on the susceptor.

5. The etching reaction apparatus of of claims 1-4, wherein the reaction chamber has a gas inlet and a gas outlet, the gas inlet is located on the side of the reaction chamber, the gas outlet is located on the side of the reaction chamber, and the gas inlet and the gas outlet are located on opposite sides of the susceptor.

6. The etching reaction apparatus according to claim 5, wherein the gas inlet and the gas outlet are respectively disposed opposite to the susceptor, and an opening area of the gas outlet is greater than or equal to an opening area of the gas inlet.

7. The etching reaction device as claimed in claim 5, further comprising a baffle plate disposed in the reaction chamber and adjacent to the gas inlet relative to the susceptor, wherein the baffle plate has a plurality of through holes for dispersing gas introduced from the gas inlet.

8. The etching reaction device of claim 5, further comprising a sensor for detecting a concentration of an etching medium within the reaction chamber.

9, etching method for etching an object, comprising:

determining that the target object is placed on a base;

controlling the base to rotate so as to drive the target object to rotate;

and introducing an etching medium into the reaction cavity accommodating the base to etch the target object.

10. The etching method according to claim 9, wherein before the introducing the etching medium to etch the target, the etching method further comprises:

and controlling the base to rotate at a preset rotating speed.

11. The etching method according to claim 10, wherein the predetermined rotation speed is in a range of 200rpm to 2000 rpm.

12. The etching method of any of , wherein the target comprises a layer of silicon material and the etching medium comprises one or more of a fluorine-containing chemistry, nitrogen, argon, oxygen, or plasma .

Technical Field

The application relates to the technical field of semiconductors, in particular to etching reaction devices and an etching method.

Background

With the improvement of the integration of semiconductor devices, the line width of the semiconductor devices is smaller and smaller, the control of the critical dimension (ECD) is more and more important, and the requirements on the etching process are higher and higher.

The etching process is processes for selectively removing materials formed on the surface of the silicon wafer or selectively removing the materials of the silicon wafer, the etching process comprises wet etching and dry etching, the dry etching is of the most common etching process at present due to high selectivity and strong controllability, but the traditional dry etching process has the problem of uneven etching , so that the difference exists in product etching, and the deviation of the critical dimension of the product is caused.

Disclosure of Invention

The application provides kinds of etching reaction equipment, and the etching reaction equipment provided by the application can solve the problem that target object etching is uneven due to uneven distribution of etching media.

, the application provides etching reaction equipment, which is used for etching a target and comprises a reaction cavity, a base and a controller, wherein the reaction cavity is used for containing an etching medium, the etching medium is used for etching the target, the base is positioned in the reaction cavity and used for bearing the target, and the controller is used for controlling the base to rotate relative to the reaction cavity.

In embodiments, the controller controls the rotation speed of the susceptor relative to the reaction chamber to be in the range of 200rpm to 2000 rpm.

In , after the controller controls the base to accelerate to a preset rotation speed, the controller controls the base to rotate at a constant speed at the preset rotation speed.

In , the etching apparatus further includes a plurality of rotating shafts respectively fixed to the susceptor and spaced apart from each other, and the controller is configured to control of the rotating shafts to rotate according to a position of the target on the susceptor.

In , the reaction chamber has an air inlet and an air outlet, the air inlet is located on the surface of the reaction chamber, the air outlet is located on the surface of the reaction chamber, and the air inlet and the air outlet are respectively located on two opposite sides of the susceptor.

In , the air inlet and the air outlet are respectively arranged opposite to the base, and the opening area of the air outlet is larger than or equal to that of the air inlet.

In kinds of embodiments, the etching reaction equipment is further provided with a baffle, the baffle is located in the reaction cavity and is opposite to the base and close to the air inlet, the baffle is provided with a plurality of through holes, and the plurality of through holes disperse the gas introduced from the air inlet.

In , the etching reaction apparatus further comprises a sensor for detecting a concentration of an etching medium in the reaction chamber.

In a second aspect, the present application also provides etching methods.

Determining that the target object is placed on a base;

controlling the base to rotate so as to drive the target object to rotate;

and introducing an etching medium into the reaction cavity accommodating the base to etch the target object.

In , before the passing the etching medium to etch the target, the etching method further includes:

and controlling the base to rotate at a preset rotating speed.

In embodiments, the predetermined speed is in the range of 200rpm to 2000 rpm.

In embodiments, the target comprises a layer of silicon material and the etching medium comprises or more of a fluorine-containing chemistry, nitrogen, argon, oxygen, or plasma.

In the embodiment of the application, the etched target rotates along with the susceptor , so that the problem of uneven etching of the target caused by uneven distribution of an etching medium is effectively solved, and the performance of etching the target by the etching reaction equipment is improved.

Drawings

In order to more clearly illustrate the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic structural diagram of an etching reaction apparatus provided in an embodiment of the present application when etching a target;

FIG. 2 is a schematic diagram of the etch reactor apparatus of FIG. 1 in another embodiment;

FIG. 3 is a schematic view of the baffle of FIG. 1 at another angle;

fig. 4 is a schematic flow chart of an etching method in an implementation mode according to an embodiment of the present application;

fig. 5 is a schematic flow chart of an etching method in a second implementation manner according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application , but not all embodiments.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an etching reaction apparatus provided in an embodiment of the present application when etching a target. The etching reaction apparatus 100 is used to etch the target 200. The object 200 includes a semiconductor element. In the present embodiment, the target 200 is described as including a silicon material layer, such as a wafer. The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because it has a circular shape.

The etching reaction apparatus 100 is filled with an etching medium to etch the target 200. the etching medium includes a gas phase medium or a plasma medium, for example, the etching medium includes kinds or more of fluorine-containing chemical substances, nitrogen, argon, oxygen or plasma, wherein the plasma (plasma) is an ionized gas-like substance composed of atoms after part of electrons are deprived and positive and negative ions generated after the atomic groups are ionized, and the movement of the ionized gas-like substance is mainly governed by electromagnetic force.

It is understood that in the embodiment of the present application, the dry etching is adopted for the process of etching the object 200. the etching reaction device 100 can select different etching media according to different etching requirements. for example, the etching reaction device 100 can select a suitable etching medium according to different materials of the etching object 200. however, no matter what etching medium is adopted, the etching medium is dispersed and non-uniform in the etching reaction device 100, so that differences exist in the etching of the whole object 200.

The etching reaction equipment 100 provided by the application aims to overcome uneven etching of etching media (gas phase or plasma media) and improve uniform etching of the whole target 200 by macroscopically controlling the etching process, and the etching reaction equipment 100 provided by the application has universal applicability to different etching media.

Referring to fig. 1, the etching reaction apparatus 100 includes a reaction chamber 10, a susceptor 20 and a controller 30. The reaction chamber 10 is used for containing an etching medium. As shown in fig. 1, the etching medium is indicated by dots and is located in the reaction chamber 10. The etching medium is used to etch the target 200. The susceptor 20 is located in the reaction chamber 10. The base 20 is used to carry the object 200. It is understood that the base 20 is detachably coupled to the object 200. When the target 200 needs to be etched, fixing the target 200 on the base 20; when the etching of the object 200 is completed, the object 200 is removed from the susceptor 20.

The controller 30 is used to control the rotation of the susceptor 20 relative to the reaction chamber 10. when the controller 30 controls the rotation of the susceptor 20 relative to the reaction chamber 10, the susceptor 20 drives the target 200 to rotate relative to the reaction chamber 10. it can be understood that, when the target 200 is placed on the susceptor 20, the target 200 is fixed relative to the susceptor 20, thereby preventing the target 200 from being separated from the susceptor 20 and damaging the target 200 during the rotation process of the susceptor 20 driving the target 200.

In the embodiment, the object 200 is placed on the base 20 by a robot or the object 200 is removed from the base 20 by the robot the controller 30 can also control the robot so that the robot attaches the object 200 to the base 20 or removes the object 200 from the base 20.

In the embodiment of the present application, the target 200 can rotate relative to the reaction chamber 10, so that the target 200 can contact etching media in different areas in the reaction chamber 10, and the problem of etching unevenness of the target 200 due to the fact that the target 200 is fixed and the etching media are not uniformly distributed is effectively reduced, thereby improving the performance of the etching reaction apparatus 100 for etching the target 200.

In the embodiment of the present application, the rotation speed of the susceptor 20 can be different according to the different unit cavities 10, different rotation speeds can be selected according to the different etching media, and different rotation speeds can be selected according to the different etching targets 200. It is to be understood that, in the embodiment of the present application, the rate at which the susceptor 20 rotates is not particularly limited.

The rotation rate of the susceptor 20 cannot be too fast, so that the susceptor 20 is prevented from driving the etching medium to flow when rotating, and the etching medium cannot effectively etch the target 200. correspondingly, the rotation rate of the susceptor 20 cannot be too slow, so that the purpose of improving the etching uniformity of can not be achieved, and the rotation rate of the susceptor 20 can be selected according to different process performances and process requirements.

In embodiments, the controller 30 controls the rotation speed of the susceptor 20 relative to the reaction chamber 10 to be in the range of 200rpm to 2000rpm, it is understood that the rotation speed of the susceptor 20 relative to the reaction chamber 10 is in the range of 200rpm to 2000rpm when the etching reaction apparatus 100 is introduced into the etching medium to etch the target 200, wherein the range of 200rpm to 2000rpm includes 200rpm and 2000rpm at the end.

In the embodiment of the present application, the rotation speed of the base 20 driving the target 200 to rotate is in a range of 200rpm to 2000rpm, which not only prevents the target 200 from being influenced by the etching medium to effectively etch the target 200 due to too fast rotation speed, but also prevents the target 200 from being too slow to achieve the purpose of improving the etching uniformity of .

, in embodiments, the controller 30 controls the rotation speed of the susceptor 20 relative to the reaction chamber 10 to be within a range of 500rpm to 800rpm, in which the controller 30 controls the rotation speed of the susceptor 20 relative to the reaction chamber 10 to be within a range of 500rpm to 800rpm, so as to ensure the rotation speed of the susceptor 20 with the target 200, thereby ensuring uniformity of the etching target 200.

After the controller 30 controls the base 20 to accelerate to the preset rotation speed, the base 20 is controlled to rotate at a constant speed at the preset rotation speed. It can be understood that the process of the base 20 driving the target 200 to rotate is accelerated to a predetermined rotation speed, then the target 200 rotates at a constant speed, and finally the target 200 is etched and then the target is decelerated to the base 20 to stop rotating. That is, during the process of etching the target 200 by the etching medium, the base 20 drives the target 200 to rotate at a constant speed.

In the embodiment of the present application, when the etching medium etches the object 200, the base 20 rotates at a uniform speed to drive the object 200 to rotate at a uniform speed relative to the receiving cavity, so as to avoid changing the flow stability of the etching gas in the receiving cavity at a variable speed, thereby effectively improving the uniform property of the etching object 200.

In the preferred embodiment, when the reaction chamber 10 has a symmetrical shape, the rotation axis of the susceptor 20 is overlapped with the center line of the reaction chamber 10. As shown in FIG. 1, the rotation axis of the susceptor 20 is overlapped with the center line of the reaction chamber 10 and is marked by line A-A.

In the embodiment of the present application, the rotation axis of the susceptor 20 is overlapped with the central line of the reaction chamber 10, so that the susceptor 20 does not displace during the rotation process, and the target 200 is prevented from being displaced by the rotation of the susceptor 20, which affects the etching uniformity of .

In embodiments, when the object 200 is placed on the susceptor 20, the center of the object 200 is located on the rotation axis of the susceptor 20. for example, when the object 200 is a wafer, since the wafer is in a circle as an axisymmetric pattern, the center line of the object 200 overlaps the axis of the wafer when the wafer is placed on the susceptor 20.

In the embodiment of the present application, the center of the target 200 is located on the rotation axis of the rotation of the susceptor 20, so that the target 200 does not displace during the rotation process, and the target 200 is prevented from displacing to affect the etching uniformity .

In embodiments, the etching reaction device 100 comprises a plurality of rotation axes fixed on the susceptor 20, and the plurality of rotation axes are spaced apart, the controller 30 can select the rotation axes accordingly according to the signal indication, so that the center of the target 200 is located on the rotation axes, for example, the controller 30 is used to control rotation of the rotation axes according to the position of the target 200 on the susceptor 20, and the rotation axes of the susceptor 20 are multiple.

In the embodiment of the present application, the etching reaction apparatus 100 includes a plurality of rotation axes, so that the etching reaction apparatus 100 can selectively select the rotation axis to adapt to different etching conditions.

In embodiments, the base 20 can simultaneously carry multiple targets 200. multiple targets 200 correspond to multiple axes of rotation . it is understood that targets 200 correspond to axes of rotation.

In the embodiment of the present application, the susceptor 20 simultaneously supports a plurality of targets 200, so that the etching reaction apparatus 100 can simultaneously etch the plurality of targets 200, thereby effectively improving the etching efficiency of the targets 200.

, with reference to fig. 1 and 2, fig. 2 is a schematic structural diagram of the etching reaction apparatus 100 shown in fig. 1 in another embodiment, the reaction chamber 10 is provided with a gas inlet 11 and a gas outlet 12, the gas inlet 11 is located on a side of the reaction chamber 10, the gas outlet 12 is located on another side of the reaction chamber 10, and it can be understood that the gas inlet 11 and the gas outlet 12 are respectively located on different sides of the reaction chamber 10.

In the embodiments, the gas inlet 11 and the gas outlet 12 are located on two opposite sides of the reaction chamber 10. in other embodiments, the gas inlet 11 and the gas outlet 12 can be located on two adjacent sides of the reaction chamber 10. in the embodiments of the present invention, the description is given by taking the example that the gas inlet 11 and the gas outlet 12 are located on two opposite sides.

The air inlet 11 and the air outlet 12 are respectively located at two opposite sides of the base 20. It is understood that the gas inlet 11 and the gas outlet 12 are respectively located at two opposite sides of the reaction chamber 10. As shown in fig. 1, the air inlet 11 and the air outlet 12 are respectively located at upper and lower sides of the base 20. As shown in fig. 1, the air inlet 11 and the air outlet 12 are respectively located at the left and right sides of the base 20. In the embodiments of the present application, no specific limitation is imposed.

In the embodiment of the present application, the gas inlet 11 and the gas outlet 12 are respectively located at two opposite sides of the susceptor 20, so that the interference of the gas entering from the gas inlet 11 and the gas exiting from the gas outlet 12 on the gas flow in the reaction chamber 10 is reduced, and the uniform etching performance of the target 200 is improved.

furthermore, in embodiments, the inlet 11 and the outlet 12 are disposed opposite the base 20, respectively, and the opening area of the outlet 12 is greater than or equal to the opening area of the inlet 11. in this case, the relative disposition means that the orthographic projections of the two at least partially overlap.

In the embodiment of the present application, the gas inlet 11 and the gas outlet 12 are respectively disposed opposite to the susceptor 20, so that the interference of the gas entering from the gas inlet 11 and the gas exiting from the gas outlet 12 on the gas flow in the reaction chamber 10 is reduced, and the opening area of the gas outlet 12 is greater than or equal to the opening area of the gas inlet 11, so that the gas flow in the reaction chamber 10 has a slow velocity and a small disturbance on the gas flow in the reaction chamber 10, thereby improving the uniform etching performance of the target 200.

referring to FIG. 1 and FIG. 3 with , FIG. 3 is a schematic view of the baffle plate of FIG. 1 at another angle, the etching apparatus 100 further includes a baffle plate 40 disposed in the reaction chamber 10 and adjacent to the gas inlet 11 relative to the susceptor 20. it is understood that the baffle plate 40 is disposed between the gas inlet 11 and the susceptor 20. the baffle plate 40 has a plurality of through holes 41, and the plurality of through holes 41 disperse the gas introduced from the gas inlet 11. it is understood that the baffle plate 40 is made of a material that is not etched by the etching medium. for example, the baffle plate 40 is made of a metal material, wherein the baffle plate 40 can be a metal mesh.

In the embodiment of the present application, the baffle 40 is disposed between the gas inlet 11 and the susceptor 20, and the baffle 40 includes a plurality of through holes 41 to disperse the entering etching medium, so as to avoid the problem that the etching medium entering from the gas inlet 11 directly impacts the target 200 to cause uneven etching , thereby improving the homogeneous performance of the etching target 200.

In embodiments, when the etching medium includes a plurality of media, the plurality of media can be mixed in a predetermined ratio of and then enter the reaction chamber 10 through the gas inlet 11, and in embodiments, when the etching medium includes a plurality of media, the plurality of media can be dissociated and then enter the reaction chamber 10 through the plurality of gas inlets 11.

with continued reference to FIG. 1, the etching reaction apparatus 100 further includes a sensor 50. the sensor 50 is used to detect the concentration of the etching medium in the reaction chamber 10. As shown in FIG. 1, a portion of the sensor 50 is located in the reaction chamber 10 to detect the concentration of the etching medium in the reaction chamber 10.

Wherein, the sensor 50 can directly monitor the concentration of the etching medium, and can also indirectly monitor the concentration of the etching medium. For example, when the sensor 50 is a mass flow Meter (MFC), the concentration of the etching medium is indirectly monitored by the mass flow meter.

Referring to fig. 4, fig. 4 is a schematic flow chart of an etching method according to an embodiment of the present disclosure in an th implementation manner, the etching method according to the embodiment of the present disclosure is used for etching a target, the target includes a semiconductor device, in the embodiment of the present disclosure, the target includes a silicon material layer as an example for describing, for example, a wafer, and the etching method is not limited to the etching reaction apparatus described above.

The etching method comprises the following steps:

and S110, determining that the target object is placed on the base.

In embodiments, the etch reactor is capable of determining that the object is placed on the susceptor based on the sensor in other embodiments, the etch reactor is also capable of determining that the object is placed on the susceptor based on a robot that handles the object and that the object is placed on the susceptor based on a human observer.

And S120, controlling the base to rotate so as to drive the target object to rotate.

Because the target object is arranged on the base, the target object is fixed relative to the base, so that the base can drive the target object to rotate when rotating. It will be appreciated that when the etch reactor is not operating, the susceptor is relatively stationary. When the etching reaction equipment needs to etch the target object, the etching reaction equipment controls the base to rotate so as to drive the target object to rotate.

And S130, introducing an etching medium to etch the target object.

The etching medium comprises a gas phase medium or a plasma medium, wherein the etching medium comprises one or more of fluorine-containing chemical substances, nitrogen, argon, oxygen or plasma , the etching reaction equipment can select different etching media according to different etching requirements, and the etching reaction equipment can select proper etching media according to different etching target materials.

Before the etching medium etches the target object, the base drives the target object to rotate, so that the target object rotates at constant speed in the etching process of the target object.

In the embodiment of the application, when the target is in the etching process, the target rotates at constant speed, so that the rapid unevenness of the target caused by the uneven distribution of the etching medium is effectively reduced, and the uniformity of the etching target is improved.

, please refer to fig. 5, in which fig. 5 is a schematic flow chart of an etching method in a second embodiment according to the present disclosure, differences between the present embodiment and the embodiment are mainly described below, and most technical contents of the present embodiment that are the same as those of the embodiment will not be described again.

The etching method comprises the following steps:

and S210, determining that the target object is placed on the base.

The specific steps included in S210 refer to S110.

S220, controlling the base to rotate so as to drive the target object to rotate.

The specific steps included in S220 are referred to as S120.

And S230, controlling the base to rotate at a preset rotating speed.

Correspondingly, the preset rotating speed cannot be too slow, and the aim of improving the etching uniformity due to too slow rotating speed of the base is avoided.

And S240, introducing an etching medium to etch the target object.

The specific steps included in S240 are referred to as S130.

In the embodiment of the application, when the etching reaction equipment does not etch the target object, the base is static, time is needed for the base to rotate to the preset rotating speed, and no etching medium is introduced into the etching reaction equipment during the time.

After the controller of the etching reaction equipment controls the base to accelerate to the preset rotating speed, the base is controlled to rotate at the constant speed at the preset rotating speed. It can be understood that the process that the base drives the target object to rotate is accelerated to a preset rotating speed, then the target object rotates at a constant speed according to the preset rotating speed, and finally the target object is etched, and the rotating speed is reduced until the base stops rotating. That is, in the process of etching the target object by the etching medium, the base drives the target object to rotate at a constant speed.

In the embodiment of the application, when the etching medium etches the target object, the base rotates at a uniform speed to drive the target object to rotate at a uniform speed relative to the accommodating cavity, so that the change of the flowing stability of etching gas in the accommodating cavity due to variable speed is avoided, and the uniform performance of the etching target object is effectively improved.

In embodiments, the controller controls the rotation speed of the susceptor relative to the reaction chamber within a range of 200rpm to 2000rpm, it is understood that the rotation speed of the susceptor relative to the reaction chamber is within a range of 200rpm to 2000rpm when the etching reaction apparatus is introduced with the etching medium to etch the target, wherein the range of 200rpm to 2000rpm includes 200rpm and 2000 rpm.

In the embodiment of the application, the rotation speed of the base driving the target object to rotate is in the range of 200rpm to 2000rpm, which not only prevents the target object from being influenced by the etching medium to effectively etch the target object due to too high rotation speed, but also prevents the target object from being too slow to achieve the purpose of improving the etching uniformity of .

The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application by applying specific examples, and the above description of the embodiments is only for the purpose of facilitating understanding of the method and the core idea of the present application, and meanwhile, for a person skilled in the art at , the description should not be construed as limiting the present application in light of the above description.