阅读说明：本技术 用于高性能交叉耦合rf滤波器的可调谐探头 (Tunable probe for high performance cross-coupled RF filters ) 是由 T·帕姆 于 2019-05-21 设计创作，主要内容包括：本发明涉及用于高性能交叉耦合RF滤波器的可调谐探头。一种可调谐探头(100,300)包括：第一谐振器(114,314)；与所述第一谐振器(114,314)隔开的第二谐振器(114,314)；和从所述第一谐振器(114,314)延伸到所述第二谐振器(114,314)的交叉耦合部(120,320)。所述交叉耦合部(120,320)包括：第一基板(202-1)和第二基板(202-2),所述第一基板和所述第二基板被布置在所述第一谐振器和所述第二谐振器之间,以在所述第一谐振器和所述第二谐振器(114,314)之间产生电容。所述交叉耦合部(120,320)还包括连接所述第一基板(202-1)和所述第二基板(202-2)的线(206),以及围绕所述线(206)的电介质(208)。(The present invention relates to a tunable probe for a high performance cross-coupled RF filter tunable probe (100,300) includes a resonator (114,314), a second resonator (114,314) spaced apart from the resonator (114,314), and a cross-coupling section (120,320) extending from the resonator (114,314) to the second resonator (114,314), the cross-coupling section (120,320) including an th substrate (202-1) and a second substrate (202-2), the th and second substrates being disposed between the resonator and the second resonator to create capacitance between the resonator and the second resonator (114,314), the cross-coupling section (120,320) further including a line (206) connecting the th substrate (202-1) and the second substrate (202-2), and a dielectric (208) surrounding the line (206).)

A tunable probe (100,300) of the variety, the tunable probe comprising:

an th resonator (114,314);

a second resonator (114,314) spaced apart from the th resonator (114,314), and

a cross-coupling section (120,320) extending from the th resonator (114,314) to the second resonator (114,314), the cross-coupling section (120,320) comprising:

th and second substrates (202-1, 202-2), the th and second substrates (202-1, 202-2) being arranged between the th and second resonators (114,314) to create a capacitance between the th and second resonators (114,314);

a line (206) connecting the th substrate (202-1) and the second substrate (202-2), and

a dielectric (208) surrounding the line (206).

2. The tunable probe (100,300) of claim 1, wherein a material dielectric constant (Er) of the th substrate and the second substrate (204) is between 9.5 and 10.0.

3. The tunable probe (100,300) of claim 1, wherein the th substrate (202-1) and the second substrate (202-2) comprise aluminum oxide substrates.

4. The tunable probe (100,300) of claim 1, wherein the tunable probe (100,300) is configured to operate at or both of the X and L bands.

5. The tunable probe (100,300) of claim 1, wherein the tunable probe (100,300) is a band pass filter configured to pass frequencies of 2 GHz.

6. The tunable probe (100,300) of claim 1, wherein the th substrate (202-1) and the second substrate (202-2) both comprise a metal portion (216- "1, 216-2) bonded to the line (206) and an alumina substrate portion (218-" 1,218-2) facing the respective resonator (114) comprising the th resonator or the second resonator.

7. The tunable probe (100,300) of claim 1, wherein the th resonator and the second resonator (114,314) are arranged in a housing (116,316) defining a gap (119, 319);

the line (206) extends across the gap (119,319) to define an exposed line portion; and is

The dielectric (208) surrounds the exposed line portion.

8. The tunable probe (100,300) of claim 1, wherein the tunable probe (100,300) is tunable at least in part by adjusting a position of the dielectric (208) along a lateral axis (220) and bonding the dielectric (208) to the line (206) between the th resonator and the second resonator (114).

9. The tunable probe (100,300) of claim 1, wherein the tunable probe (100,300) is tuned at least in part by selecting dimensions of the th substrate (202-1) and the second substrate (202-2).

10, a method (500) of tuning a tunable probe, the method comprising:

arranging a cross-coupling section (502) between the th resonator and the second resonator, the cross-coupling section comprising:

th and second substrates, the th and second substrates being disposed between the th and second resonators to generate capacitance between the th and second resonators;

a line connecting each of the th substrate and the second substrate , and

a dielectric surrounding the line;

adjusting the position (504) of the cross-coupling along a transverse axis between the th resonator and the second resonator, and

bonding the cross-coupling in place (506) between the th resonator and the second resonator.

Technical Field

The present disclosure relates generally to tunable probes, such as bandpass filters, for Radio Frequency (RF) applications.

Background

some bandpass filters are constructed using resonant elements.

Many satellite-based communication system components are additionally targeted at reduced weight to reduce the costs associated with launching the satellite into orbit and to utilize approved space technology components it is a challenge to develop communication materials that utilize approved materials, reduce weight, and provide proper signal processing characteristics.

Disclosure of Invention

In aspects of the present disclosure, a tunable probe includes a th resonator, a second resonator spaced apart from the th resonator, and a cross-coupling section extending from the th resonator to the second resonator, the cross-coupling section including a th substrate and a second substrate, the th substrate and the second substrate being disposed between the th resonator and the second resonator to generate capacitance between the th resonator and the second resonator, a line connecting the th substrate and the second substrate, and a dielectric surrounding the line.

In another aspects of the invention, cross-couplings for tunable probes include a th substrate and a second substrate, both the th substrate and the second substrate having a th portion and a second portion, a wire connecting the th substrate and the th portion of the second substrate, and a dielectric surrounding the wire, in embodiments, the th portion is a metal portion and the second portion is an alumina substrate portion.

In another aspect of the invention, there is provided methods of tuning a tunable probe in which a cross-coupling is disposed between a 0 th resonator and a second resonator, the cross-coupling including a th substrate and a second substrate, the th substrate and the second substrate being disposed between the th resonator and the second resonator to create a capacitance between the th resonator and the second resonator, a line connecting each of the th substrate and the second substrate, and a dielectric surrounding the line, the method further including adjusting a position of the cross-coupling along a transverse axis between the th resonator and the second resonator, and bonding the cross-coupling in place between the th resonator and the second resonator.

Drawings

FIG. 1 is an isometric view of an tunable probe according to an embodiment of the present disclosure;

FIG. 2 is a detailed view of a cross-coupling portion of the -th tunable probe shown in FIG. 1, according to an embodiment of the present disclosure;

FIG. 3 is an isometric view of a second tunable probe according to an embodiment of the present disclosure;

FIG. 4 is a graph of signal processing characteristics of a tunable probe according to an embodiment of the present disclosure;

FIG. 5 illustrates a cross-coupling according to an embodiment of the present disclosure; and

FIG. 6 is a method of tuning a tunable probe according to an embodiment of the present disclosure.

Detailed Description

FIG. 1 is an isometric view of an th tunable probe in accordance with an embodiment of the present disclosure, in particular, FIG. 1 shows a tunable probe 100 that includes a tunable probe inlet 110 connected to a housing 116 and a tunable probe outlet 112. the tunable probe 100 may be connected in a communication system via the tunable probe inlet 110 and outlet 112 to provide filtering characteristics for Radio Frequency (RF) signals in the communication system. the housing 116 includes a gap 119 between a th arm 122 and a second arm 124. the tunable probe 100 may also include various adjustable screws 118 disposed around the housing between the resonators 114.

As used throughout this specification, the resonator positions are indicated with suffixes after the resonator number (e.g., "6" of "114-6" indicates the sixth resonator position). accordingly, in FIG. 1, tunable probe 100 includes twelve (12) resonators 114. resonators 114 may be implemented by cylindrical cavities within housing 116. resonator 114 is included within housing 116 at resonator position 114-1 adjacent tunable probe inlet 110. according to the numbering convention, the resonator positions increase incrementally in a counterclockwise direction along housing 116 from tunable probe inlet 110. thus, proceeding in the counterclockwise direction, the next resonator positions after resonator position 114-1 are second resonator positions 114-2. this convention continues to the twelfth (final) resonator position 114-12 adjacent tunable probe outlet 112.

According to an embodiment, tunable probe 100 includes a resonator 114 spaced apart from a second resonator 114. for example, the th resonator 114 may be located at a fourth resonator location 114-4, the second resonator 114 may be located at a ninth resonator location 114-9, the second resonator 114 being spaced apart from the th resonator 114 and opposite the th resonator 114. cross-coupling 120 extends from the th resonator 114 to the second resonator 114. cross-coupling 120 will be discussed in more detail in conjunction with the discussion of FIG. 2.

In general, the resonators 114 in the tunable probe are grouped in pairs, for example, the tunable probe 100 includes six pairs of resonators 114, each pair in the six pairs includes two resonators 114 positioned opposite each other, the pair includes resonators 114 at the resonator position 114-1 and the twelfth resonator position 114-12, the sixth pair includes resonators 114 at the sixth resonator position 114-6 and the seventh resonator position 114-7. As discussed later in the specification, methods of improving the signal processing capability of the tunable probe are to increase the number of resonator 114 pairs within the housing 116. however, this method results in excess material in a larger housing. methods are to include cross-couplings, such as cross-coupling 120, between pairs of resonators at higher frequencies, the wires may be able to provide sufficient capacitance to provide the desired signal processing characteristics.

FIG. 2 is a detailed view of the cross-coupling of the th tunable probe shown in FIG. 1, in particular, FIG. 2 shows view 200, which is a top view of the portion of tunable probe 100 and details aspects of cross-coupling 120. cross-coupling 120 includes a th substrate 202-1 proximate to the th resonator 114 at resonator position 114-4, and a second substrate 202-2 proximate to the second resonator 114 at resonator position 114-9. cross-coupling 120 is disposed between the th and second resonators 114 to create a capacitance between the th and second resonators 114. line 206 connects the th substrate 202-1 and second substrate 202-2. dielectric 208 surrounds line 206. in the embodiment, line 206 is a silver line, although other conductive materials, such as copper, gold, etc. dielectric 208 also prevents line 206 from shorting to housing 116.

In embodiments, and second resonator 114 are disposed in housing 116. the space between arm 122 and second arm 124 defines gap 119. line 206 extends across gap 119 to define an exposed line portion, and dielectric 208 surrounds the exposed line portion.

In embodiments, the tunable probe 100 is configured to operate at or both of the X and L microwave communication/radio/frequency bands having frequency ranges between 8 to 12GHz and 1 to 2GHz, respectively, in such frequency ranges the capacitance of the wires used alone as a cross-coupling between to the resonators 114 is insufficient to produce the desired filtering performance of the tunable probe in order to provide sufficient capacitance, the cross-coupling 120 extending between the two resonators 114 includes a substrate 202-1 and a second substrate 202-2 connected by a wire 206, a substrate 202-1 is positioned proximate to the th resonator 114 at a fourth resonator position 114-4, and a second substrate 202-2 is positioned proximate to the second resonator 114 at a ninth resonator position 114-9. in embodiments, the materials of the substrate 202-1 and the second substrate 202-2 are selected to have a dielectric constant between 9.5 and 10.0 (ε)_rAnd also shown as Er) such materials may include alumina substrates.

As detailed further in step of fig. 2, both th substrate 202-1 and second substrate 202-2 may include th portions 216-1 and 216-2 and second portions 218-1 and 218-2, respectively, wire 206 connecting th portion 216-1 of th substrate 202-1 with th portion 216-2 of second substrate 202-2. in embodiments, second portions 218-1,218-2 are oriented toward respective resonators 114,314 including th or second resonators. thus, th substrate 202-1 second portion 218-1 is oriented toward th resonator 114 on the opposite side of th portion 216-1 from wire 206 (e.g., positioned adjacent or facing th resonator 114). similarly, second portion 218-2 of second substrate 202-2 is oriented toward th resonator 114 on the opposite side of wire 206 from th portion 216-2. similarly, second portion 218-2 is oriented toward th resonator 114 on the opposite side of wire 206 (e.g., positioned adjacent or facing th resonator 114. silver material) and the second portion 218-2 is selected based on the dielectric constant of the material (e.g., silver material, silver oxide material, e.g., silver oxide material, silver oxide, silver.

The portions 216-1,216-2 of the -th and second substrates 202-1, 202-2 may be rectangular and have length and width dimensions in addition, the second portions 218-1,218-2 of the -th and second substrates 202-1, 202-2 may also be rectangular and have the same length and width dimensions as the portions 216-1, 216-2. the dimensions (e.g., cross-sectional area) of the -th and second portions 216-1,216-2, 218-1,218-2 may be selected based on the desired filtering parameters of the tunable probe 100. in addition to being rectangular, the dimensions of the -th and second portions 216-1,216-2, 218-1,218-2 may also be circular, elliptical, or the like.

In constructing the substrate 202-1 and the second substrate 202-2, the inner surfaces of the th portions 216-1,216-2 are attached to the wire 206. an exemplary method of attaching the th portion to the wire 206 includes bonding with epoxy, welding, etc. the outer surfaces of the th portions 216-1,216-2 opposite the inner surfaces are attached to the second portions 218-1, 218-2. an exemplary method of attaching the th portion to the second portion includes bonding with epoxy, folding the edges of the th portions 216-1,216-2 around the second portion to partially enclose and mechanically capture the second portions 218-1,218-2, etc. in some embodiments, the substrates 202-1, 202-2 include the second portions 218-1,218-2 directly attached to the wire 206, without the th portions 216-1, 216-2.

In embodiments, the tunable probe 100 may be tuned at least in part by adjusting the position of the dielectric 208 along a lateral axis 220. the lateral axis 220 extends between the th and second resonators 114 and may be parallel to the longitudinal axis of the line 206. the dielectric 208 is fixed (e.g., epoxied) to the line 206 at a position along the lateral axis 220 between the th and second resonators 114 determined based on the desired tuning.

Housing 116 may also include a groove in each arm 122, 124 along transverse axis 220 the grooves are configured to receive portions of dielectric 208 to allow dielectric 208 to translate along transverse axis 220 to facilitate tuning tunable probe 100. in addition to bonding dielectric 208 to wire 206, portions of dielectric 208 may also be bonded to housing 116 at the grooves.

Figure 3 is an isometric view of a second tunable probe according to an embodiment of the present disclosure. In particular, FIG. 3 shows an isometric view of a tunable probe 300. The tunable probe 300 is similar to the tunable probe 100 discussed in conjunction with fig. 1. Although tunable probe 100 includes a total of twelve resonators 114 with cross-coupling 120 extending between the resonators at fourth resonator position 114-4 and ninth resonator position 114-9, other configurations may be implemented as well. For example, the tunable probe 300 includes eight resonators with cross-couplings extending between the resonators at the second and seventh locations.

The components of the tunable probe 300 are similar to similarly numbered components of the tunable probe 100, the tunable probe 300 including a tunable probe inlet 310, a tunable probe outlet 312, a plurality of resonators 314, and a housing 316 having an th arm 322 and a second arm 324, the th arm 322 and the second arm 324 define a gap 319, a cross-coupling 320 is disposed between the th resonator 314 and the second resonator 314, compared to the tunable probe 100, the th distinction is that the tunable probe 300 includes 8 resonators 314 (compared to the 12 resonators 114 of the tunable probe 100) the second distinction is that the cross-coupling 320 extends between the th resonator 314 at the second resonator position 314-2 and the second resonator 314 at the seventh resonator position 314-7 (compared to the cross-coupling 120 of the tunable probe 100 that extends between the resonators 114 at the fourth and ninth resonator positions).

FIG. 4 is a graph of signal processing characteristics of a tunable probe according to an embodiment of the present disclosure. In particular, FIG. 4 is a graph 400 illustrating the filtering characteristics of the tunable probe 100. In graph 400, the vertical axis represents signal level measured in decibels (dB). The horizontal axis represents the frequency of the communication signal measured in GHz. Curve 402 shows forward transmission and curve 410 shows forward reflection as measured at each different frequency across the tunable probe inlet 110 and the tunable probe outlet 112.

As illustrated by the forward transmission curve 402, the tunable probe 100 functions as a bandpass filter centered at approximately 2GHz, this is indicated by the bandpass region 404 having a 0dB measurement between 1.96GHz and 2.2GHz the th notch 406 is located at a frequency directly below the bandpass region 404 (e.g., 1.92GHz), the second notch 408 is located at a frequency directly above the bandpass region 404 (e.g., 2.25GHz), outside the bandpass region 404, the value of the forward transmission curve 402 drops sharply, this occurs at a frequency at and below the notch 406 (e.g., 1.92GHz) and at a frequency at and above the second notch 408 (e.g., 2.25GHz), placement of the cross-coupling 120 extending between the resonator and the second resonator results in notches 406, 408 in the forward transmission curve 402. the steepness of the notches 406, 408 (e.g., the slope of the forward transmission curve 402) is determined based at least in part on the lateral position of the dielectric 208 along the lateral axis 220 and the dimensions of the substrates 202-1, 406-2.

FIG. 5 illustrates a cross-coupling in accordance with embodiments of the present disclosure, in particular, FIG. 5 illustrates a cross-coupling 520 that may be similar to and used in place of cross-couplings 120 and 320 disclosed herein, cross-coupling 520 includes th substrates 202-1 and 202-2, dielectric 208, and line 506. th substrate 202-1 and 202-2 each include a th portion 216-1,216-2 located proximate to line 506, and a second portion 218-1,218-2 opposite th portions 216-1,216-2, second portions 218-1,218-2 configured to be oriented toward a resonator (e.g., 114, 314). line 506 is similar to line 206, and further includes bends 508-1, 508-2 and attachment portions 510-1, 510-2 on each end of line 506.

To assemble the cross-coupling 520, the initially straight and unbent segment of wire is inserted through the bore of the dielectric 208 the wire is bent using a shaping tool to introduce the bends 508-1, 508-2 and attachment portions 510-1, 510-2 to the initially straight and unbent segment of wire alternatively, the wire may initially include bends 508 and attachment portions 510 at the th end of the wire, leaving the second end of the wire straight and unbent.

the base plate 202-1 and the second base plate 202-2 are attached to respective attachment portions 510-1, 510-2 on respective ends of the line 506. the attachment portions 510-1, 510-2 are substantially perpendicular to the base plate 202-1 and the second base plate 202-2 and provide increased surface area to attach the base plates 202-1, 202-2 to the line 506. an example method of attaching the line 506 to the base plates 202-1, 202-2 at the attachment portions 510-1, 510-2 includes soldering and gold ring oxidizing these components at the mating surfaces 512-1, 512-2 at .

As part of tuning the of the probe (e.g., 100), the cross-coupling 520 may be inserted into the housing (e.g., 116) along the transverse axis between pairs of resonators (e.g., along the transverse axis 220). The line 506 is bonded to the dielectric 208 at a determined location to tune the probe (e.g., adjust the slope of the notch at either end of the band pass region).

INDUSTRIAL APPLICABILITY

The teachings of the present disclosure have broad utility across the industry in non-limiting embodiments the tunable probe 100 is used as a band pass filter in a satellite based communication system operating in any of the X and L bands in such embodiments engineering objectives are to manufacture the tunable probe from materials approved for use in satellite communication systems another engineering objectives are to reduce the overall weight and size of the tunable probe.

Although tunable probe 100 is used in the following embodiments, any other suitable tunable probe may be used (e.g., tunable probe 300, a tunable probe having a different number of resonators or cross-couplings at different locations).

The tunable probe 100 includes components fabricated from materials approved by column , for example, the wire 206 is made from silver and the second portions 218-1,218-2 of the respective substrates 202-1, 202-2 are made from an alumina substrate the cross-coupling 120 extends between the th resonator 114 at the fourth resonator location 114-4 and the second resonator 114 at the ninth resonator location 114-9.

The alumina substrate in the cross-coupling 120 provides sufficient capacitance between the th and second resonators 114 to provide appropriate notches 406, 408 at either end of the pass-through region 404 the tunable probe 100 can also be tuned as described in connection with fig. 6.

FIG. 6 is a method of tuning a tunable probe according to an embodiment of the present disclosure. Specifically, fig. 6 illustrates a method 600, comprising: at block 602, arranging cross-coupling sections between resonators; at block 604, adjusting the position of the cross-coupling along the lateral axis; and bonding the cross-coupling in place at block 606.

For example, tunable probe 100 may be used to perform method 600, but any other tunable probe and cross-coupling disclosed herein may similarly be used to perform method 600. in such an embodiment of block 602, cross-coupling 120 is disposed between and second resonator 114, e.g., between resonators located at fourth resonator location 114-4 and ninth resonator location 114-9. cross-coupling 120 may be any cross-coupling described herein and includes substrate 202-1 and second substrate 202-2 connected by line 206, with dielectric 208 surrounding line 206.

At block 604, the position of cross-coupling 120 is adjusted along lateral axis 220 between th resonator and second resonator 114 at block 606, cross-coupling 120 is bonded in place at the adjusted position between th resonator and second resonator 114.

Further, the present disclosure includes embodiments according to the following clauses:

clause 1: is a tunable probe including a resonator, a second resonator spaced apart from the resonator, and a cross-coupling extending from the resonator to the second resonator, the cross-coupling including a th substrate and a second substrate, the th substrate and the second substrate being disposed between the th resonator and the second resonator to create a capacitance between the th resonator and the second resonator, a line connecting the th substrate and the second substrate, and a dielectric surrounding the line.

Clause 2-the tunable probe of clause 1, wherein the material dielectric constant (Er) of the th substrate and the second substrate is between 9.5 and 10.0.

Clause 3-the tunable probe of clause 1, wherein the th substrate and the second substrate comprise aluminum oxide substrates.

Clause 4-the tunable probe of clause 1, wherein the tunable probe is configured to operate at or both of the X and L frequency bands.

Clause 5: the tunable probe of clause 1, wherein the tunable probe is a band pass filter configured to pass frequencies of 2 GHz.

Clause 6-the tunable probe of clause 1, wherein the th substrate and the second substrate both include a metal portion bonded to the wire and an alumina substrate portion facing the respective resonator including the th resonator or the second resonator.

Clause 7-the tunable probe of clause 1, wherein the th resonator and the second resonator are arranged in a housing defining a gap, the wire extends across the gap to define an exposed wire portion, and the dielectric surrounds the exposed wire portion.

Clause 8: the tunable probe of clause 1, wherein the wire comprises silver wire.

Clause 9-the tunable probe of clause 1, wherein the tunable probe is tunable at least in part by adjusting a position of the dielectric along a lateral axis and bonding the dielectric to the line between the th resonator and the second resonator.

Clause 10-the tunable probe of clause 1, wherein the tunable probe is tuned at least in part by selecting the dimensions of the th substrate and the second substrate.

Clause 11-the tunable probe of clause 1, wherein the tunable probe includes twelve resonators, the th resonator is located at a fourth resonator location, and the second resonator is located at a ninth resonator location opposite the fourth resonator location.

Clause 12-the tunable probe of clause 1, wherein the tunable probe comprises eight resonators, the th resonator is located at a second resonator location, and the second resonator is located at a seventh resonator location opposite the second resonator location.

Clause 13: a cross-coupling for a tunable probe, comprising a th substrate and a second substrate, both the th substrate and the second substrate having an th portion and a second portion, a line connecting the th substrate and the th portion of the second substrate, and a dielectric surrounding the line.

Clause 14-the cross-coupling section of clause 13, wherein the cross-coupling section is configured to be disposed between the th resonator and the second resonator to create a capacitance between the th resonator and the second resonator.

Clause 15-the cross-coupling of clause 14, wherein the cross-coupling is configured to tune the tunable probe at least in part by positioning the cross-coupling along a transverse axis between the th resonator and the second resonator.

Clause 16-the cross-coupling of clause 13, wherein the th substrate and the second substrate comprise aluminum oxide substrates having a material dielectric constant (Er) between 9.5 and 10.0.

Clause 17-the cross-coupling of clause 14, wherein the second portion is oriented toward the respective resonator comprising the -th resonator or a second resonator.

Clause 18-the cross-coupling of clause 13, wherein the th substrate and the second substrate are bonded to the wire with an epoxy.

Clause 19: the cross-coupling of clause 13, wherein the dielectric is bonded to the wires with an epoxy.

Clause 20: a method of tuning a tunable probe, the method comprising:

a cross-coupling section is disposed between a th resonator and a second resonator, the cross-coupling section including a th substrate and a second substrate, the th substrate and the second substrate being disposed between the th resonator and the second resonator to generate capacitance between the th resonator and the second resonator;

adjusting the position of the cross-coupling section along a transverse axis between the th resonator and the second resonator, and

bonding the cross-coupling in place between the th resonator and the second resonator.

Although the foregoing text sets forth a detailed description of numerous different embodiments, it should be understood that the scope of legal protection is defined by the words of the claims set forth at the end of this patent. The detailed description is to be construed as exemplary only and does not describe every possible embodiment since describing every possible embodiment would be impractical, if not impossible. Numerous alternative embodiments could be implemented, using either current technology or technology developed after the filing date of this patent, which would still fall within the scope of the claims defining the scope of protection.

It will be further understood that no limitation of the meaning of a term beyond its plain or ordinary meaning is intended, unless explicitly defined otherwise herein, and such term should not be interpreted as limiting the scope of any statement made in any part of this patent (except the language of the claims). The scope of any term(s) recited in the claims at the end of this patent is hereby incorporated by reference to the singular meaning , merely for the sake of clarity so as not to confuse the reader, and it is not intended that such claim term be limited, by implication or otherwise, to that single meaning.