阅读说明：本技术 一种温度检测电路 (Temperature detection circuit ) 是由 陈鹏鹏 曹佳 陈鹏伟 彭尧 齐全文 于 2019-11-26 设计创作，主要内容包括：本发明公开一种温度检测电路,包括用于提供基准电压的基准电压源、用于将基准电压转换为第一电流和第二电流的电压电流转换器、用于接收第一电流和第二电流,并产生随温度变化的正温度系数电压的温度感应器及用于放大并输出正温度系数电压的电压放大器。通过基准电压源为电压电流转换器提供基准电压,电压电流转换器将基准电压转换为两路电流,两路电流经过温度感应器产生随温度变化的电压信号,再经过电压放大器后输出,实现温度检测,该温度检测电路的结构简单、面积小、成本低、温度检测范围宽,能够实现高集成度、高精度,可集成于需要温度检测的电路系统中。(The invention discloses a temperature detection circuit, which comprises a reference voltage source for providing reference voltage, a voltage-current converter for converting the reference voltage into a first current and a second current, a temperature inductor for receiving the first current and the second current and generating positive temperature coefficient voltage changing along with temperature, and a voltage amplifier for amplifying and outputting the positive temperature coefficient voltage. The reference voltage is provided for the voltage-current converter through the reference voltage source, the voltage-current converter converts the reference voltage into two paths of currents, the two paths of currents generate voltage signals changing along with temperature through the temperature sensor and are output through the voltage amplifier to realize temperature detection.)

1. A temperature sensing circuit, comprising:

a reference voltage source for providing a reference voltage V_REF；

A voltage-to-current converter for converting the reference voltage V_REFConverting into a first current and a second current;

a temperature sensor for receiving the first and second currents and generating a positive temperature coefficient voltage V varying with temperature_PTAT(ii) a And

a voltage amplifier for amplifying and outputting the positive temperature coefficient voltage V_PTAT。

2. The temperature sensing circuit of claim 1, wherein the reference voltage source comprises:

the starting circuit comprises a PMOS tube M101, a PMOS tube M102, a PMOS tube M103, an NMOS tube M104, an NMOS tube M105 and an NMOS tube M106;

the bias circuit comprises a PMOS tube M107, a PMOS tube M108, an NMOS tube M109, an NMOS tube M110, a PMOS tube M111, an NMOS tube M112, a PMOS tube M113, a PMOS tube M114 and an NMOS tube M115; and

the output circuit comprises a PMOS tube M116, a PMOS tube M117, a PMOS tube M118, a PMOS tube M119, a PMOS tube M120, a PMOS tube M121, a triode Q1, a triode Q2, a triode Q3, a resistor R101, a resistor R102 and an operational amplifier;

the connection relationship is as follows:

the grid electrode of the PMOS tube M101 is connected with the drain electrode, and the source electrode is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M102 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M101; the grid electrode of the PMOS tube M103 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M102; the grid electrode of the NMOS tube M104 is connected with a first bias voltage Vb1, the drain electrode of the NMOS tube M104 is connected with the drain electrode of the PMOS tube M103, and the source electrode of the NMOS tube M is grounded; the grid electrode of the NMOS tube M105 is connected with the grid electrode of the NMOS tube M104, and the source electrode is grounded; the grid electrode of the NMOS tube M106 is connected with the grid electrode of the NMOS tube M104, and the source electrode is grounded; the grid electrode of the PMOS tube M107 is connected with the drain electrode of the NMOS tube M105 and is used as a fourth bias voltage Vb4, and the source electrode of the PMOS tube M is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M108 is connected with the drain electrode of the NMOS tube M106 and is used as a third bias voltage Vb3, and the source electrode is connected with the drain electrode of the PMOS tube M107; the gate and the drain of the NMOS transistor M109 are connected to the drain of the PMOS transistor M108 and used as a second bias voltage Vb 2; the grid electrode and the drain electrode of the NMOS tube M110 are connected and then connected to the source electrode of the NMOS tube M109, and the source electrode is grounded; the grid electrode of the PMOS tube M111 is connected with the drain electrode of the NMOS tube M105, and the source electrode is connected with a power supply voltage VCC; the grid electrode and the drain electrode of the NMOS tube M112 are connected to the drain electrode of the PMOS tube M111 and used as a first bias voltage Vb1, and the source electrode is grounded; the grid electrode of the PMOS tube M113 is connected with the drain electrode, and the source electrode is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M114 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M113; the grid electrode of the NMOS tube M115 is connected with the grid electrode of the NMOS tube M112, the drain electrode is connected with the drain electrode of the PMOS tube M114, and the source electrode is grounded; the source electrode of the PMOS tube M116 is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M117 is connected with the drain electrode of the NMOS tube M106, and the source electrode is connected with the drain electrode of the PMOS tube M116; the above-mentionedThe source electrode of the PMOS tube M118 is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M119 is connected with the drain electrode of the NMOS tube M106, and the source electrode is connected with the drain electrode of the PMOS tube M118; the source electrode of the PMOS tube M120 is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M121 is connected with the drain electrode of the NMOS tube M106, the source electrode is connected with the drain electrode of the PMOS tube M120, and the drain electrode outputs the reference voltage V_REF(ii) a The base electrode and the collector electrode of the triode Q1 are grounded, and the emitter electrode is connected to the drain electrode of the PMOS transistor M117; the base electrode and the collector electrode of the triode Q2 are grounded, and the emission is connected to the drain electrode of the PMOS transistor M119 through a resistor R101; the base electrode and the collector electrode of the triode Q3 are grounded, and the emission is connected to the drain electrode of the PMOS transistor M121 through a resistor R102; the first input end of the operational amplifier is connected to the drain of the PMOS transistor M119, the second input end is connected to the drain of the PMOS transistor M117, and the output ends are respectively connected to the gate of the PMOS transistor M116, the gate of the PMOS transistor M118, and the gate of the PMOS transistor M120.

3. The temperature detection circuit of claim 2, wherein the voltage-to-current converter comprises an NMOS transistor M201, an NMOS transistor M202, an NMOS transistor M203, a PMOS transistor M204, a PMOS transistor M205, a PMOS transistor M206, a PMOS transistor M207, a PMOS transistor M208, an NMOS transistor M209, an NMOS transistor M210, a PMOS transistor M211, a PMOS transistor M212, a PMOS transistor M213, a PMOS transistor M214, a PMOS transistor M215, and a resistor R201;

the connection relationship is as follows:

the grid electrode of the NMOS transistor M201 is connected with the first bias voltage Vb1, and the source electrode is grounded; the grid electrode of the NMOS tube M202 is connected with the reference voltage V_REFThe source electrode is connected with the drain electrode of the NMOS tube M201; the grid electrode of the NMOS tube M203 is grounded through the resistor R201, and the source electrode is connected with the drain electrode of the NMOS tube M201; the grid electrode of the PMOS tube M204 is connected with the drain electrode of the NMOS tube M203, the source electrode of the PMOS tube M is connected with a power supply voltage VCC, and the drain electrode of the PMOS tube M202 is connected with the drain electrode of the NMOS tube M; the grid electrode of the PMOS tube M205 is connected with the drain electrode of the NMOS tube M203, the source electrode of the PMOS tube M is connected with a power supply voltage VCC, and the drain electrode of the PMOS tube M203 is connected with the drain electrode of the NMOS tube M; the grid electrode of the PMOS tube M206 is connected with the drain electrode of the PMOS tube M204, and the source electrode of the PMOS tube M is connected with a power supply voltage VCC; the source electrode of the PMOS tube M207 is connected with the drain electrode of the PMOS tube M206, and the drain electrode is connected with the NMOS tube M203, a grid electrode; the grid electrode and the drain electrode of the PMOS tube M208 are connected and connected to the grid electrode of the PMOS tube M207, and the source electrode is connected with a power supply voltage VCC; the source electrode of the NMOS tube M209 is grounded, and the drain electrode is connected with the drain electrode of the PMOS tube M208; the grid electrode and the drain electrode of the NMOS tube M210 are connected and connected to the grid electrode of the NMOS tube M209, and the source electrode is grounded; the grid electrode of the PMOS tube M211 is connected with the drain electrode of the PMOS tube M204, the source electrode of the PMOS tube M211 is connected with a power voltage VCC, and the drain electrode of the PMOS tube M210 is connected with the drain electrode of the NMOS tube M; the grid electrode of the PMOS tube M212 is connected with the drain electrode of the PMOS tube M204, and the source electrode of the PMOS tube M is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M213 is connected with the grid electrode of the PMOS tube M207, the source electrode is connected with the drain electrode of the PMOS tube M212, and the drain electrode outputs the first current; the grid electrode of the PMOS tube M214 is connected with the drain electrode of the PMOS tube M204, and the source electrode of the PMOS tube M is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M215 is connected with the grid electrode of the PMOS tube M207, the source electrode is connected with the drain electrode of the PMOS tube M214, and the drain electrode outputs the second current;

wherein the first current is the reference voltage V_REFAnd the quotient of the resistance value of the resistor R201, wherein the second current is N times of the first current, N is an integer and is not less than 1, and the value of N is not limited.

4. The temperature detection circuit of claim 3, wherein the temperature sensor comprises an NMOS transistor M301 and an NMOS transistor M302, wherein,

the gate and drain of the NMOS transistor M301 are connected to the second current, and the source is connected to the first current and used as the positive temperature coefficient voltage V_PTAT(ii) a And

the gate of the NMOS transistor M302 is connected to the second current, the source is grounded, and the drain is connected to the source of the NMOS transistor M301.

5. The temperature detection circuit of claim 4, wherein the voltage amplifier comprises a PMOS transistor M401, a PMOS transistor M402, a PMOS transistor M403, a PMOS transistor M404, a PMOS transistor M405, a PMOS transistor M406, a PMOS transistor M407, a PMOS transistor M408, an NMOS transistor M409, an NMOS transistor M410, an NMOS transistor M411, an NMOS transistor M412, a PMOS transistor M413, an NMOS transistor M414, an NMOS transistor M415, a resistor R401, a resistor R402, and a resistor R_CAnd a capacitor C_C；

The connection relationship is as follows:

the grid electrode of the PMOS tube M401 is connected with a reference bias voltage Vfb; the grid electrode of the PMOS tube M402 is connected with the positive temperature coefficient voltage V_PTATThe source electrode is connected with the source electrode of the PMOS tube M401; the grid electrode of the PMOS tube M403 is connected with the fourth bias voltage Vb4, and the source electrode of the PMOS tube M403 is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M404 is connected with the third bias voltage Vb3, the source electrode is connected with the drain electrode of the PMOS tube M403, and the drain electrode is connected with the source electrode of the PMOS tube M401; the source electrode of the PMOS tube M405 is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M406 is connected with the grid electrode of the PMOS tube M405, and the source electrode of the PMOS tube M is connected with a power supply voltage VCC; the grid electrode of the PMOS tube M407 is connected with the grid electrode of the PMOS tube M404, the source electrode is connected with the drain electrode of the PMOS tube M405, and the drain electrode is connected with the grid electrode of the PMOS tube M405; the grid electrode of the PMOS tube M408 is connected with the grid electrode of the PMOS tube M404, and the source electrode is connected with the drain electrode of the PMOS tube M406; the grid electrode of the NMOS tube M409 is connected with the second bias voltage Vb2, the source electrode is connected with the drain electrode of the PMOS tube M401, and the drain electrode is connected with the drain electrode of the PMOS tube M407; the grid electrode of the NMOS tube M410 is connected with the grid electrode of the NMOS tube M409, the source electrode is connected with the drain electrode of the PMOS tube M402, and the drain electrode is connected with the drain electrode of the PMOS tube M408; the grid electrode of the NMOS tube M411 is connected with the first bias voltage Vb1, the source electrode of the NMOS tube is grounded, and the drain electrode of the NMOS tube M401 is connected with the drain electrode of the PMOS tube M; the grid electrode of the NMOS tube M412 is connected with the grid electrode of the NMOS tube M411, the source electrode is grounded, and the drain electrode is connected with the drain electrode of the PMOS tube M402; the grid electrode of the PMOS tube M413 is connected with the drain electrode of the PMOS tube M408, the source electrode is connected with a power voltage VCC, and the drain electrode sequentially passes through the capacitor C_CAnd the resistance R_CThe drain electrode is connected to the NMOS tube M410; the grid electrode of the NMOS tube M414 is connected with the grid electrode of the NMOS tube M409, and the drain electrode is connected with the drain electrode of the PMOS tube M413; the grid electrode of the NMOS tube M415 is connected with the grid electrode of the NMOS tube M411, the source electrode is grounded, and the drain electrode is connected with the drain electrode of the NMOS tube M414; the first end of the resistor R401 is grounded, and the second end outputs the reference bias voltage Vfb; the first end of the resistor R402 is connected with the reference bias voltage Vfb, and the second end is connected with the drain of the PMOS tube M413 and is used as the output voltage Vout of the temperature detection circuit;

the resistance value of the resistor R402 is K times of the resistance value of the resistor R401, K is an integer and is larger than or equal to 1, and K can be selected according to a desired output voltage amplitude range.

6. The temperature detection circuit according to claim 5, wherein an output voltage Vout of the temperature detection circuit is (K +1) x V_PTAT。

Technical Field

The invention relates to the technical field of temperature sensing. And more particularly to a temperature sensing circuit for temperature sensitive circuitry.

Background

The temperature detection circuit is widely applied to various systems, and the main function of the temperature detection circuit is to quantitatively detect the temperature. In many applications, a temperature detection circuit is required to be provided on a chip in the conventional integrated circuit. For example, the temperature detection circuit detects whether the temperature is too hot to activate an overheat protection mechanism of the circuit, thereby protecting the operation performance of the circuit.

The temperature detection circuit is of various types, and as is known in the art, it is often utilized to provide a temperature-independent reference voltage and to provide temperature-dependent circuit elements in the circuit. The electrical parameters of these temperature-dependent circuit elements may have a positive temperature coefficient or may also have a negative temperature coefficient. Then, a typical parameter (such as voltage) which changes with the temperature is provided by the circuit element to be compared with a reference voltage which is not related to the temperature, so that the temperature at the moment is detected.

At present, a silicon-based process is generally adopted to realize a temperature detection circuit, and the main advantages are as follows: 1) the temperature sensor is convenient to integrate with other circuits, is integrated with a temperature sensitive circuit, and can detect the temperature in real time, so that the temperature sensitive circuit can be adjusted according to the temperature; 2) the mass production is convenient, and the cost of a single temperature detection circuit is greatly reduced after the mass production; 3) and the temperature sensor is integrated with a high-precision analog-to-digital converter (ADC), so that a digital temperature detection function can be realized.

However, for temperature sensitive circuit systems, there is also a need for a temperature detection circuit having a wide temperature detection range, and capable of achieving high integration and high accuracy.

Disclosure of Invention

In order to solve at least one of the above problems, an object of the present invention is to provide a temperature detection circuit having a wide temperature detection range and capable of achieving high integration and high accuracy.

In order to achieve the purpose, the invention adopts the following technical scheme:

a temperature sensing circuit, the circuit comprising:

a reference voltage source for providing a reference voltage V_REF；

A voltage-to-current converter for converting a reference voltage V_REFConverting into a first current and a second current;

temperature sensingAn inductor for receiving the first current and the second current and generating a positive temperature coefficient voltage V varying with temperature_PTAT(ii) a And

a voltage amplifier for amplifying and outputting the positive temperature coefficient voltage V_PTAT。

Optionally, the reference voltage source includes:

the starting circuit comprises a PMOS tube M101, a PMOS tube M102, a PMOS tube M103, an NMOS tube M104, an NMOS tube M105 and an NMOS tube M106;

the bias circuit comprises a PMOS tube M107, a PMOS tube M108, an NMOS tube M109, an NMOS tube M110, a PMOS tube M111, an NMOS tube M112, a PMOS tube M113, a PMOS tube M114 and an NMOS tube M115; and

the output circuit comprises a PMOS tube M116, a PMOS tube M117, a PMOS tube M118, a PMOS tube M119, a PMOS tube M120, a PMOS tube M121, a triode Q1, a triode Q2, a triode Q3, a resistor R101, a resistor R102 and an operational amplifier;

the connection relationship is as follows:

the grid electrode of the PMOS tube M101 is connected with the drain electrode, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M102 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M101;

the grid electrode of the PMOS tube M103 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M102;

the grid electrode of the NMOS tube M104 is connected with a first bias voltage Vb1, the drain electrode is connected with the drain electrode of the PMOS tube M103, and the source electrode is grounded;

the grid electrode of the NMOS tube M105 is connected with the grid electrode of the NMOS tube M104, and the source electrode is grounded;

the grid electrode of the NMOS tube M106 is connected with the grid electrode of the NMOS tube M104, and the source electrode is grounded;

the grid electrode of the PMOS tube M107 is connected with the drain electrode of the NMOS tube M105 and is used as a fourth bias voltage Vb4, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M108 is connected with the drain electrode of the NMOS tube M106 and is used as a third bias voltage Vb3, and the source electrode is connected with the drain electrode of the PMOS tube M107;

the grid electrode and the drain electrode of the NMOS tube M109 are connected and then connected to the drain electrode of the PMOS tube M108 to be used as a second bias voltage Vb 2;

the grid electrode and the drain electrode of the NMOS tube M110 are connected and then connected to the source electrode of the NMOS tube M109, and the source electrode is grounded;

the grid electrode of the PMOS tube M111 is connected with the drain electrode of the NMOS tube M105, and the source electrode is connected with a power supply voltage VCC;

the grid electrode and the drain electrode of the NMOS tube M112 are connected and then connected to the drain electrode of the PMOS tube M111 and used as a first bias voltage Vb1, and the source electrode is grounded;

the grid electrode of the PMOS tube M113 is connected with the drain electrode, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M114 is connected with the drain electrode, and the source electrode is connected with the drain electrode of the PMOS tube M113;

the grid electrode of the NMOS tube M115 is connected with the grid electrode of the NMOS tube M112, the drain electrode is connected with the drain electrode of the PMOS tube M114, and the source electrode is grounded;

the source electrode of the PMOS tube M116 is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M117 is connected with the drain electrode of the NMOS tube M106, and the source electrode is connected with the drain electrode of the PMOS tube M116;

the source electrode of the PMOS tube M118 is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M119 is connected with the drain electrode of the NMOS tube M106, and the source electrode is connected with the drain electrode of the PMOS tube M118;

the source electrode of the PMOS tube M120 is connected with a power supply voltage VCC;

the grid of the PMOS transistor M121 is connected with the drain of the NMOS transistor M106, the source is connected with the drain of the PMOS transistor M120, and the drain outputs a reference voltage V_REF；

The base electrode and the collector electrode of the triode Q1 are grounded, and the emitter electrode is connected to the drain electrode of the PMOS tube M117;

the base electrode and the collector electrode of the triode Q2 are grounded, and the emitter is connected to the drain electrode of the PMOS transistor M119 through the resistor R101;

the base electrode and the collector electrode of the triode Q3 are grounded, and the emitter is connected to the drain electrode of the PMOS transistor M121 through the resistor R102;

the first input end of the operational amplifier is connected to the drain of the PMOS transistor M119, the second input end is connected to the drain of the PMOS transistor M117, and the output ends are respectively connected to the gate of the PMOS transistor M116, the gate of the PMOS transistor M118, and the gate of the PMOS transistor M120.

Further optionally, the voltage-current converter includes an NMOS transistor M201, an NMOS transistor M202, an NMOS transistor M203, a PMOS transistor M204, a PMOS transistor M205, a PMOS transistor M206, a PMOS transistor M207, a PMOS transistor M208, an NMOS transistor M209, an NMOS transistor M210, a PMOS transistor M211, a PMOS transistor M212, a PMOS transistor M213, a PMOS transistor M214, a PMOS transistor M215, and a resistor R201;

the connection relationship is as follows:

the grid electrode of the NMOS tube M201 is connected with a first bias voltage Vb1, and the source electrode is grounded;

the grid of the NMOS tube M202 is connected with a reference voltage V_REFThe source electrode is connected with the drain electrode of the NMOS tube M201;

the grid electrode of the NMOS tube M203 is grounded through a resistor R201, and the source electrode is connected with the drain electrode of the NMOS tube M201;

the grid electrode of the PMOS tube M204 is connected with the drain electrode of the NMOS tube M203, the source electrode is connected with the power voltage VCC, and the drain electrode is connected with the drain electrode of the NMOS tube M202;

the grid electrode of the PMOS tube M205 is connected with the drain electrode of the NMOS tube M203, the source electrode is connected with the power voltage VCC, and the drain electrode is connected with the drain electrode of the NMOS tube M203;

the grid electrode of the PMOS tube M206 is connected with the drain electrode of the PMOS tube M204, and the source electrode is connected with a power supply voltage VCC;

the source electrode of the PMOS tube M207 is connected with the drain electrode of the PMOS tube M206, and the drain electrode is connected with the grid electrode of the NMOS tube M203;

the grid electrode and the drain electrode of the PMOS tube M208 are connected and connected to the grid electrode of the PMOS tube M207, and the source electrode is connected with a power supply voltage VCC;

the source electrode of the NMOS tube M209 is grounded, and the drain electrode is connected with the drain electrode of the PMOS tube M208;

the grid electrode and the drain electrode of the NMOS tube M210 are connected and connected to the grid electrode of the NMOS tube M209, and the source electrode is grounded;

the grid electrode of the PMOS tube M211 is connected with the drain electrode of the PMOS tube M204, the source electrode is connected with the power voltage VCC, and the drain electrode is connected with the drain electrode of the NMOS tube M210;

the grid electrode of the PMOS tube M212 is connected with the drain electrode of the PMOS tube M204, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M213 is connected with the grid electrode of the PMOS tube M207, the source electrode is connected with the drain electrode of the PMOS tube M212, and the drain electrode outputs a first current;

the grid electrode of the PMOS tube M214 is connected with the drain electrode of the PMOS tube M204, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M215 is connected with the grid electrode of the PMOS tube M207, the source electrode is connected with the drain electrode of the PMOS tube M214, and the drain electrode outputs a second current;

wherein the first currentIs a reference voltage V_REFThe quotient of the resistance value of the resistor R201 and the second current is N times of the first current, wherein N is an integer and is more than or equal to 1.

Further optionally, the temperature sensor comprises an NMOS transistor M301 and an NMOS transistor M302, wherein,

the gate and drain of the NMOS transistor M301 are connected to the second current, and the source is connected to the first current as the positive temperature coefficient voltage V_PTAT(ii) a And

the gate of the NMOS transistor M302 is connected to the second current, the source is grounded, and the drain is connected to the source of the NMOS transistor M301.

Further optionally, the voltage amplifier includes a PMOS transistor M401, a PMOS transistor M402, a PMOS transistor M403, a PMOS transistor M404, a PMOS transistor M405, a PMOS transistor M406, a PMOS transistor M407, a PMOS transistor M408, an NMOS transistor M409, an NMOS transistor M410, an NMOS transistor M411, an NMOS transistor M412, a PMOS transistor M413, an NMOS transistor M414, an NMOS transistor M415, a resistor R401, a resistor R402, a resistor R_CAnd a capacitor C_C；

The connection relationship is as follows:

the grid electrode of the PMOS tube M401 is connected with a reference bias voltage Vfb;

the grid of the PMOS transistor M402 is connected with a positive temperature coefficient voltage V_PTATThe source electrode is connected with the source electrode of the PMOS tube M401;

the grid electrode of the PMOS tube M403 is connected with a fourth bias voltage Vb4, and the source electrode of the PMOS tube M403 is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M404 is connected with a third bias voltage Vb3, the source electrode is connected with the drain electrode of the PMOS tube M403, and the drain electrode is connected with the source electrode of the PMOS tube M401;

the source electrode of the PMOS tube M405 is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M406 is connected with the grid electrode of the PMOS tube M405, and the source electrode is connected with a power supply voltage VCC;

the grid electrode of the PMOS tube M407 is connected with the grid electrode of the PMOS tube M404, the source electrode is connected with the drain electrode of the PMOS tube M405, and the drain electrode is connected with the grid electrode of the PMOS tube M405;

the grid electrode of the PMOS tube M408 is connected with the grid electrode of the PMOS tube M404, and the source electrode is connected with the drain electrode of the PMOS tube M406;

the grid electrode of the NMOS tube M409 is connected with a second bias voltage Vb2, the source electrode is connected with the drain electrode of the PMOS tube M401, and the drain electrode is connected with the drain electrode of the PMOS tube M407;

the grid electrode of the NMOS tube M410 is connected with the grid electrode of the NMOS tube M409, the source electrode is connected with the drain electrode of the PMOS tube M402, and the drain electrode is connected with the drain electrode of the PMOS tube M408;

the grid electrode of the NMOS tube M411 is connected with a first bias voltage Vb1, the source electrode is grounded, and the drain electrode is connected with the drain electrode of the PMOS tube M401;

the grid electrode of the NMOS tube M412 is connected with the grid electrode of the NMOS tube M411, the source electrode is grounded, and the drain electrode is connected with the drain electrode of the PMOS tube M402;

the grid electrode of the PMOS tube M413 is connected with the drain electrode of the PMOS tube M408, the source electrode is connected with a power voltage VCC, and the drain electrode sequentially passes through a capacitor C_CAnd a resistance R_CThe drain electrode is connected to the NMOS tube M410;

the grid electrode of the NMOS tube M414 is connected with the grid electrode of the NMOS tube M409, and the drain electrode is connected with the drain electrode of the PMOS tube M413;

the grid electrode of the NMOS tube M415 is connected with the grid electrode of the NMOS tube M411, the source electrode is grounded, and the drain electrode is connected with the drain electrode of the NMOS tube M414;

the first end of the resistor R401 is grounded, and the second end outputs a reference bias voltage Vfb;

the first end of the resistor R402 is connected with the reference bias voltage Vfb, and the second end is connected with the drain of the PMOS tube M413 and is used as the output voltage Vout of the temperature detection circuit;

wherein the resistance value of the resistor R402 is K times of the resistance value of the resistor R401, K is an integer and K is more than or equal to 1.

Further alternatively, the output voltage Vout of the temperature detection circuit is (K +1) × V_PTAT。

The invention has the following beneficial effects:

the temperature detection circuit comprises a reference voltage source for providing reference voltage, a voltage-current converter for converting the reference voltage into a first current and a second current, a temperature inductor for receiving the first current and the second current and generating positive temperature coefficient voltage changing along with temperature, and a voltage amplifier for amplifying and outputting the positive temperature coefficient voltage. The reference voltage is provided for the voltage-current converter through the reference voltage source, the voltage-current converter converts the reference voltage into two paths of currents, the two paths of currents generate voltage signals changing along with temperature through the temperature sensor and are output through the voltage amplifier to realize temperature detection.

Drawings

The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.

Fig. 1 shows a circuit configuration diagram of a temperature detection circuit in an embodiment of the present invention.

Fig. 2 shows a circuit configuration diagram of a reference voltage source in the embodiment of the present invention.

Fig. 3 shows a circuit configuration diagram of the voltage-current converter in the embodiment of the present invention.

Fig. 4 shows a circuit configuration diagram of the temperature sensor in the embodiment of the present invention.

Fig. 5 shows a circuit configuration diagram of the voltage amplifier in the embodiment of the present invention.

Detailed Description

In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.