阅读说明：本技术 超疏水电容式湿度传感器及其制造方法 (Super-hydrophobic capacitive humidity sensor and manufacturing method thereof ) 是由 米查·因特赞特 弗雷德里克·威廉姆·毛里茨·万海尔蒙特 内博伊沙·内纳多维茨 迪米特里·索科尔 于 2018-05-04 设计创作，主要内容包括：一种传感器半导体器件(10)包括换能器(11),该换能器(11)包括具有至少两个电极(13)的电容器(12)。换能器(11)还包括布置在电容器(12)的至少两个电极(13)之间的聚合物(14),和换能器(11)的顶表面(15)。聚合物(14)能够吸收水,并且顶表面(15)被布置为使得其暴露于传感器半导体器件(10)的环境。此外,顶表面(15)的至少一部分是超疏水的,并且传感器半导体器件(10)能够测量传感器半导体器件(10)的环境湿度。(A sensor semiconductor device (10) comprises a transducer (11), which transducer (11) comprises a capacitor (12) with at least two electrodes (13). The transducer (11) further comprises a polymer (14) arranged between the at least two electrodes (13) of the capacitor (12), and a top surface (15) of the transducer (11). The polymer (14) is capable of absorbing water, and the top surface (15) is arranged such that it is exposed to the environment of the sensor semiconductor device (10). Furthermore, at least a portion of the top surface (15) is superhydrophobic, and the sensor semiconductor device (10) is capable of measuring an ambient humidity of the sensor semiconductor device (10).)

1. A sensor semiconductor device (10) comprising:

-a transducer (11) comprising:

a capacitor (12) having at least two electrodes (13),

-a polymer (14) arranged between at least two electrodes (13) of the capacitor (12), and

a top surface (15) of the transducer (11), wherein

-the polymer (14) is capable of absorbing water,

-the top surface (15) is arranged such that it is exposed to the environment of the sensor semiconductor device (10),

-at least a part of said top surface (15) is superhydrophobic, and

-the sensor semiconductor device (10) is capable of measuring an ambient humidity of the sensor semiconductor device (10).

2. The sensor semiconductor device (10) according to claim 1, wherein at least a portion of the top surface (15) is superhydrophobic due to formation of a structure (18) on the top surface (15).

3. Sensor semiconductor device (10) according to claim 1 or 2, wherein

-the transducer (11) comprises a top layer (16) having a top surface (15); and

-at least a part of said top surface (15) is superhydrophobic due to the formation of structures within said top layer (16).

4. Sensor semiconductor device (10) according to one of the preceding claims, wherein the capacitor (12) is a plate capacitor.

5. Sensor semiconductor device (10) according to one of claims 1 to 3, wherein the capacitor (12) is a fringe capacitor.

6. Sensor semiconductor device (10) according to one of the preceding claims, wherein a trench (17) is arranged around the transducer (11), the trench (17) being provided to drain liquid from the top surface (15).

7. Sensor semiconductor device (10) according to one of the preceding claims, wherein structures (18) are patterned in the top surface (15) by means of photolithography, wherein the dimensions of the structures (18) are at least 1nm and at most 100 μ ι η in a lateral direction (x, y) parallel to a main plane of extension of the transducer (11), and the dimensions of the structures are at least 1nm and at most 1 μ ι η in a vertical direction (z) perpendicular to the main plane of extension of the transducer (11).

8. A method of manufacturing a sensor semiconductor device (10), comprising:

-forming a transducer (11) comprising a capacitor (12) having at least two electrodes (13);

-arranging a polymer (14) between at least two electrodes (13) of the capacitor (12), and

-structuring a top layer (16) of the transducer (11) such that a top surface (15) of the top layer (16) is at least partially superhydrophobic, wherein

-the polymer (14) is capable of absorbing water,

-the top surface (15) is arranged such that it is exposed to the environment of the sensor semiconductor device (10), an

-the sensor semiconductor device (10) is capable of measuring an ambient humidity of the sensor semiconductor device (10).

9. Method of manufacturing a sensor semiconductor device (10) according to claim 8, wherein structuring the top layer (16) comprises forming a structure (18) on the top surface (15) or within the top layer (16).

10. Method for manufacturing a sensor semiconductor device (10) according to claim 8 or 9, wherein the top layer (16) is composed of the polymer (14).

11. Method for manufacturing a sensor semiconductor device (10) according to claim 8 or 9, wherein the top layer (16) is constituted by an electrode (13) of the capacitor (12).

12. Method for manufacturing a sensor semiconductor device (10) according to claim 8 or 9, wherein the top layer (16) is neither constituted by the polymer (14) nor by an electrode (13) of the capacitor (12).

13. Method for manufacturing a sensor semiconductor device (10) according to one of claims 8 to 12, wherein the capacitor (12) is a plate capacitor.

14. Method for manufacturing a sensor semiconductor device (10) according to one of claims 8 to 12, wherein the capacitor (12) is a fringe capacitor.

15. Method of manufacturing a sensor semiconductor device (10) according to one of the claims 8 to 14, wherein a trench (17) is arranged around the transducer (11), the trench (17) being provided to drain liquid from the top surface (15).

16. Method of manufacturing a sensor semiconductor device (10) according to one of claims 8 to 15, wherein structuring the top layer (16) comprises at least one of:

-a patterning step of patterning the substrate,

-roughening the surface of the substrate,

-patterning by means of photolithography,

-a chemical treatment of the substrate,

-etching of the substrate,

-an exposure to ultraviolet light,

-growth of a nanostructured metal layer.

17. Method of manufacturing a sensor semiconductor device (10) according to claim 16, wherein structures (18) are patterned in the top layer (16) by means of photolithography, wherein the dimensions of the structures (18) are at least 1nm and at most 100 μ ι η in a lateral direction (x, y) parallel to a main plane of extension of the transducer (11).