阅读说明：本技术 传感器电路系统以及相关芯片及电子装置 (Sensor circuit system, related chip and electronic device ) 是由 徐荣贵 程汝明 徐建昌 于 2019-08-15 设计创作，主要内容包括：本申请公开了一种传感器电路系统(10)以及相关芯片及电子装置。所述传感器电路系统包括：电荷泵电路(102),提供具有可调的电平的电荷泵供应电压(V<Sub>DD</Sub>)；模拟电路(104),耦接于所述电荷泵电路,用以接收所述电荷泵供应电压做为所述模拟电路的电压源,并用以操作在所述电荷泵供应电压下以输出模拟信号(S<Sub>ANA</Sub>)；模数转换器(106),耦接于所述模拟电路,用以将所述模拟信号转换为数字信号(S<Sub>DIG</Sub>)；以及数字信号处理模块(108),用以获取所述数字信号的信噪比并根据所述信噪比来产生控制信号,以调整所述电荷泵电路提供的所述电荷泵供应电压的所述电平。(The application discloses a sensor circuitry (10) and related chip and electronic device. The sensor circuitry includes: a charge pump circuit (102) providing a charge pump supply voltage (V) having an adjustable level DD ) (ii) a An analog circuit (104) coupled to the charge pump circuit for receiving the charge pump supply voltage as a voltage source for the analog circuit and for operating at the charge pump supply voltage to output an analog signal (S) ANA ) (ii) a An analog-to-digital converter (106) coupled to the analog circuit for converting the analog signal into a digital signal (S) DIG ) (ii) a And a digital signal processing module (108) for obtaining a signal-to-noise ratio of the digital signal and generating a control signal according to the signal-to-noise ratio to adjust the level of the charge pump supply voltage provided by the charge pump circuit.)

1. Sensor circuitry, characterized in that the sensor circuitry comprises:

a charge pump circuit providing a charge pump supply voltage having an adjustable level;

an analog circuit, coupled to the charge pump circuit, for receiving the charge pump supply voltage as a voltage source of the analog circuit, and for operating under the charge pump supply voltage to output an analog signal;

an analog-to-digital converter, coupled to the analog circuit, for converting the analog signal into a digital signal; and

and the digital signal processing module is used for acquiring the signal-to-noise ratio of the digital signal and generating a control signal according to the signal-to-noise ratio so as to adjust the level of the charge pump supply voltage provided by the charge pump circuit.

2. The sensor circuitry of claim 1, wherein the charge pump circuit has a first voltage input and a second voltage input, and the charge pump circuit is configured to generate the charge pump supply voltage based on supply voltages received at the first voltage input and the second voltage input, respectively.

3. The sensor circuitry of claim 2, wherein the charge pump circuit comprises a number of capacitors, and the charge pump circuit selectively charges the number of capacitors with a supply voltage received at the first voltage input or the second voltage input.

4. The sensor circuitry of claim 3, wherein the charge pump supply voltage is a sum of supply voltages received at the first and second voltage inputs, respectively.

5. The sensor circuitry of claim 3, wherein the number of capacitors comprises a first capacitor and a second capacitor, wherein the charge pump circuit comprises:

a first inverter including a first input terminal and a first output terminal, wherein the first output terminal of the first inverter is coupled to one terminal of the first capacitor;

a second inverter including a second input terminal and a second output terminal, wherein the first inverter is cross-coupled with the second inverter, wherein the second output terminal of the second inverter is coupled to one terminal of the second capacitor;

a first switch coupled to the other end of the first capacitor;

a second switch coupled between the other terminal of the first capacitor and the first voltage input terminal of the charge pump circuit;

a third switch coupled between the other end of the second capacitor and the first voltage input of the charge pump circuit; and

a fourth switch coupled to the other end of the second capacitor.

6. The sensor circuitry of claim 5,

wherein the first inverter comprises:

a first transistor; and

a second transistor connected in series with the first transistor to the second voltage input terminal of the charge pump circuit, an

Wherein the second inverter comprises:

a third transistor; and

a fourth transistor connected in series with the third transistor to the second voltage input terminal of the charge pump circuit.

7. The sensor circuitry of claim 2, further comprising:

a multiplexer to selectively output a first source voltage or a second source voltage to the second voltage input of the charge pump circuit, wherein the first source voltage is different from the second source voltage.

8. The sensor circuitry of claim 7 wherein the first source voltage is greater than the second source voltage and the first source voltage is further input to the first voltage input.

9. The sensor circuitry of claim 8, wherein the charge pump supply voltage is less than or equal to twice the first source voltage.

10. The sensor circuitry of claim 8, wherein the digital signal processing module generates the control signal to control the multiplexer to output the first source voltage or the second source voltage as a function of the signal-to-noise ratio of the digital signal.

11. The sensor circuitry of claim 10, wherein the digital signal processing module controls the multiplexer to output the second source voltage when the signal-to-noise ratio of the digital signal is above a signal-to-noise ratio preset value.

12. The sensor circuitry of claim 10, wherein the digital signal processing module controls the multiplexer to output the first source voltage when the signal-to-noise ratio of the digital signal is below a signal-to-noise ratio preset value.

13. The sensor circuitry of claim 1, wherein the analog circuitry is pixel circuitry.

14. The sensor circuitry of claim 1, wherein the analog circuitry is touch-coded signal generation circuitry.

15. A chip, wherein the chip comprises:

the sensor circuitry of any one of claims 1-14.

16. An electronic device, comprising:

the chip of claim 15.

Technical Field

The present disclosure relates to power supply technologies, and particularly to a sensor circuit system, a related chip and an electronic device.

Background

With the development and progress of science and technology, mobile electronic devices such as mobile phones, digital cameras, tablet computers, notebook computers and the like have become indispensable tools in people's lives. When the electronic devices are powered on, the voltage provided by the battery of the electronic device or the external power supply of the electronic device is converted into various system voltages for the internal circuits of the electronic device. Generally, the kinds of system voltages that can be provided by the electronic device are fixed, and the number of kinds is limited, that is, the number of kinds of system voltages that can be provided by the electronic device is often less than the number of kinds of supply voltages required by the internal circuit. At this time, the level of the system voltage needs to be adjusted by the charge pump circuit to adjust the supply voltage required by the internal circuit. The charge pump circuit must also consider both power consumption and performance of the internal circuit when adjusting the level of the system voltage.

Therefore, how to improve the operation of the charge pump circuit in order to consider both the power consumption and the performance of the internal circuit has become an important task.

Disclosure of Invention

An objective of the present invention is to disclose a power supply technique, and more particularly, to a sensor circuit system, a related chip and an electronic device for solving the above problems.

One embodiment of the present application discloses a sensor circuitry. The sensor circuitry includes: a charge pump circuit providing a charge pump supply voltage having an adjustable level; an analog circuit, coupled to the charge pump circuit, for receiving the charge pump supply voltage as a voltage source of the analog circuit, and for operating under the charge pump supply voltage to output an analog signal; an analog-to-digital converter, coupled to the analog circuit, for converting the analog signal into a digital signal; and the digital signal processing module is used for acquiring the signal-to-noise ratio of the digital signal and generating a control signal according to the signal-to-noise ratio so as to adjust the level of the charge pump supply voltage provided by the charge pump circuit.

An embodiment of the present application discloses a chip. The chip includes the aforementioned sensor circuitry.

An embodiment of the present application discloses an electronic device. The electronic device comprises the chip.

The charge pump circuit disclosed by the application can generate supply voltages with different levels based on different performances of internal circuits of the electronic device to serve as voltage sources of the internal circuits, so that the power consumption of the electronic device is reduced without remarkably reducing the performances of the internal circuits.

Drawings

FIG. 1 is a block diagram of an embodiment of sensor circuitry of the present application.

FIG. 2 is a schematic diagram of an embodiment of operating the sensor circuitry of FIG. 1.

FIG. 3 is a schematic diagram of another embodiment of operating the sensor circuitry of FIG. 1.

Fig. 4 is a circuit diagram of an embodiment of the charge pump circuit of fig. 1.

Fig. 5 is a circuit diagram of an embodiment of operating the charge pump circuit of fig. 4.

Fig. 6 is a circuit diagram of another embodiment of operating the charge pump circuit of fig. 4.

FIG. 7 is a schematic diagram of an embodiment of an electronic device in which a chip including the sensor circuitry shown in FIG. 1 is implemented.

Wherein the reference numerals are as follows:

10 sensor circuitry

100 multiplexer

102 charge pump circuit

104 analog circuit

106 analog-to-digital converter

108 digital signal processing module

110 memory

Source voltage of V1

Source voltage of V2

Vn source voltage

V_DDCharge pump supply voltage

T1 first voltage input terminal

Second voltage input terminal of T2

S_ANAAnalog signal

S_DIGDigital signal

S/N signal-to-noise ratio

S/N_REFPreset value of signal-to-noise ratio

S_CTRLControl signal

M1 transistor

M2 transistor

M3 transistor

M4 transistor

SW1 switch

SW2 switch

SW3 switch

SW4 switch

C1 capacitor

C2 capacitor

C_LOADLoad capacitor

INV1 first reverser

INV2 second reverser

IN1 input terminal

IN2 input terminal

OUT1 output terminal

OUT2 output terminal

Detailed Description

The following disclosure provides various embodiments or illustrations that can be used to implement various features of the disclosure. The embodiments of components and arrangements described below serve to simplify the present disclosure. It is to be understood that such descriptions are merely illustrative and are not intended to limit the present disclosure. For example, in the description that follows, forming a first feature on or over a second feature may include certain embodiments in which the first and second features are in direct contact with each other; and may also include embodiments in which additional elements are formed between the first and second features described above, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or characters in the various embodiments. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Moreover, spatially relative terms, such as "under," "below," "over," "above," and the like, may be used herein to facilitate describing a relationship between one element or feature relative to another element or feature as illustrated in the figures. These spatially relative terms are intended to encompass a variety of different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Although numerical ranges and parameters setting forth the broad scope of the application are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain standard deviations found in their respective testing measurements. As used herein, "the same" generally means that the actual value is within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range. Alternatively, the term "the same" means that the actual value falls within the acceptable standard error of the mean, subject to consideration by those of ordinary skill in the art to which this application pertains. It is understood that all ranges, amounts, values and percentages used herein (e.g., to describe amounts of materials, length of time, temperature, operating conditions, quantitative ratios, and the like) are "the same" unless otherwise specifically indicated or indicated. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained. At the very least, these numerical parameters are to be understood as meaning the number of significant digits recited and the number resulting from applying ordinary carry notation. Herein, numerical ranges are expressed from one end to the other or between the two ends; unless otherwise indicated, all numerical ranges set forth herein are inclusive of the endpoints.

When the electronic device is powered on, the voltage provided by a battery of the electronic device or an external power supply of the electronic device is converted into various system voltages for use by an internal circuit of the electronic device. In particular, the level of the system voltage is generally adjusted by a charge pump circuit of the electronic device to a level required by the internal circuit. The more the adjusted level is closer to the level required by the internal circuitry, the less power is wasted. In contrast, when the internal circuit operates at a higher level of the supply voltage, the voltage swing of the analog signal output from the internal circuit is larger, and in the case where the intrinsic noise of the internal circuit is constant, the signal-to-noise ratio of the signal output from the internal circuit is therefore better. In order to take into account both the power consumption and the performance of the internal circuit, the charge pump circuit of the present application will reduce the power consumption of the electronic device without significantly affecting the performance of the internal circuit, and the details thereof will be described below.

FIG. 1 is a block diagram of an embodiment of sensor circuitry 10 of the present application. Referring to fig. 1, sensor circuitry 10 includes a multiplexer 100, a charge pump circuit 102, an analog circuit 104, an analog-to-digital converter 106, a digital signal processing module 108, and a memory 110.

The multiplexer 100 receives a plurality of source voltages V1, V2 through Vn, where n is a positive integer. In the present embodiment, the source voltages V1 and V2 may be referred to as a first source voltage V1 and a second source voltage V2, where appropriate, and the first source voltage V1 is different from the second source voltage V2. In some embodiments, the first source voltage V1 is greater than the second source voltage V2. In some embodiments, the plurality of source voltages V1, V2-Vn include AVDD28, DVDD18, and DVDD11, wherein a level of AVDD28 is greater than a level of DVDD18 and a level of DVDD18 is greater than a level of DVDD 11. In some embodiments, the first source voltage V1 is AVDD28 and the second source voltage V2 is DVDD 18. In addition, the multiplexer 100 is controlled by the digital signal processing module 108 to selectively output one of the plurality of source voltages V1, V2 to Vn to the charge pump circuit 102.

The charge pump circuit 102 is coupled to the multiplexer 100 and has a first voltage input terminal T1 and a second voltage input terminal T2. The charge pump circuit 102 receives a supply voltage through a first voltage input terminal T1 and a second voltage input terminal T2. In detail, the charge pump circuit 102 receives a first source voltage V1 through a first voltage input terminal T1, and one of a plurality of source voltages V1, V2 to Vn through a second voltage input terminal T2. Accordingly, the charge pump circuit 102 generates the charge pump supply voltage V based on the supply voltages received by the first voltage input terminal T1 and the second voltage input terminal T2_DDWherein the charge pump supplies a voltage V_DDWith adjustable levels. In some embodiments, the charge pump supplies a voltage V_DDWhich is the sum of the supply voltages received at the first voltage input terminal T1 and the second voltage input terminal T2, respectively, is described in detail in the embodiments of fig. 2 and 3. In some embodiments, the charge pump circuit 102 includes a switching regulator boost pump, a non-regulated capacitive charge pump, a regulated capacitive charge pump, or other suitable charge pump.

An analog circuit 104 coupled to the charge pump circuit 102 for receiving the charge pump supply voltage V_DDUsed as a voltage source for the analog circuit 104 and operated at the charge pump supply voltage V_DDTo output an analog signal S_ANAThat is, the analog circuit 104 needs to supply the charge pump with the voltage V_DDA circuit as a voltage source.

In some embodiments, sensor circuitry 10 is applied to an image sensorIn this case, the analog circuit 104 is a pixel circuit. Under the given exposure intensity and exposure time, the higher the level of the supply voltage of the pixel circuit is, the analog signal S output by the pixel circuit_ANAThe larger the voltage swing.

In some embodiments, the sensor circuit system 10 is applied in a touch system, in which case the analog circuit 104 is a touch-control code-printing signal generating circuit. When the level of the supply voltage of the touch code signal generating circuit is higher, the code signal is stronger, and accordingly, the sensing signal (i.e., the analog signal S) generated by the touch electrode in the touch system_ANA) The larger the voltage swing.

An analog-to-digital converter 106 coupled to the analog circuit 104 for converting the analog signal S_ANAConversion into digital signal S_DIG. In some embodiments, analog-to-digital converter 106 comprises a delta-sigma (delta-sigma) analog-to-digital converter. In some embodiments, the analog-to-digital converter 106 comprises an incremental delta-sigma analog-to-digital converter. When the analog signal S_ANAThe larger the voltage swing of (A), the digital signal S_DIGThe better the S/N signal-to-noise ratio.

A digital signal processing module 108 coupled between the adc 106 and the multiplexer 100 for obtaining the digital signal S_DIGAnd generating a control signal S based on the signal-to-noise ratio S/N_CTRLTo adjust the charge pump supply voltage V provided by the charge pump circuit 102_DDOf (c) is detected. In particular, the digital signal processing module 108 can be based on the digital signal S_DIGThe performance of the analog circuit 104 is analyzed and compared with a predetermined performance value, and then the multiplexer 100 is controlled according to the comparison result to adjust the supply voltage V of the charge pump_DD. Through this manner of regulation, the sensor circuitry 10 is able to take into account both the power consumption and the performance of the analog circuitry 104.

In this embodiment, the performance is the SNR S/N, and correspondingly, the preset performance value is the SNR preset value S/N_REF. Accordingly, the digital signal processing module 108 processes the digital signal S_DIGS/N of signal-to-noise ratio and S/N of preset value of signal-to-noise ratio_REFTo generate a control signal S_CTRLTo control the multiplexer 100 toOne of a plurality of source voltages V1, V2-Vn is output.

In this embodiment, the SNR is preset S/N_REFIs stored in memory 110. The memory 110 can store a plurality of performance presets, and the dsp module 108 can access the required performance presets from the memory 110 as a reference for comparison. In that

In fig. 1, the memory 110 is shown as being independent of the dsp module 108, however, the present disclosure is not limited to this configuration. In some embodiments, the memory 110 may be integrated within the digital signal processing module 108.

FIG. 2 is a schematic diagram of an embodiment of operating the sensor circuitry 10 of FIG. 1, wherein in the embodiment of FIG. 2, the digital signal S_DIGThe S/N of the signal-to-noise ratio is higher than the preset S/N of the signal-to-noise ratio_REFMeaning a digital signal S_DIGThe S/N ratio of (A) is better. Referring to fig. 2, the digital signal processing module 108 controls the multiplexer 100 to output the second source voltage V2, so that the charge pump circuit 102 generates the charge pump supply voltage V1 and the second source voltage V2 based on the first source voltage V1 and the second source voltage V2 respectively received by the first voltage input terminal T1 and the second voltage input terminal T2_DD(i.e., V)_DD＝V1+V2)。

Since the multiplexer 100 selects the second source voltage V2, which is less than the first source voltage V1, to be output to the charge pump circuit 102, the charge pump supply voltage V output by the charge pump circuit 102_DDThe level ratio multiplexer 100 selects the first source voltage V1 to be output to the charge pump circuit 102, the charge pump supply voltage V output by the charge pump circuit 102_DDLow from the level of (c). Since in the embodiment of fig. 2, the digital signal S_DIGIs preferably set so that even the charge pump supply voltage V output by the charge pump circuit 102 is greater_DDIs relatively low, and does not significantly reduce the digital signal S_DIGCan reduce power consumption.

FIG. 3 is a schematic diagram of another embodiment of operating the sensor circuitry 10 of FIG. 1, wherein in the embodiment of FIG. 3, the digital signal S_DIGS/N of the signal-to-noise ratio is lower than the preset S/N of the signal-to-noise ratio_REFIt is meant to describeDigital signal S_DIGThe signal to noise ratio S/N is poor. Referring to fig. 3, the digital signal processing module 108 controls the multiplexer 100 to output the first source voltage V1, so that the charge pump circuit 102 generates the charge pump supply voltage V1 and the first source voltage V1 based on the first source voltage V1 and the first source voltage V1 respectively received by the first voltage input terminal T1 and the second voltage input terminal T2_DD(i.e., V)_DD＝V1+V1)。

Since the multiplexer 100 selects the first source voltage V1 greater than the second source voltage V2 to be output to the charge pump circuit 102, the charge pump supply voltage V output by the charge pump circuit 102_DDThe level ratio multiplexer 100 selects the second source voltage V2 to be output to the charge pump circuit 102, the charge pump supply voltage V output by the charge pump circuit 102_DDHigh from the level of (d). When the analog circuit 104 operates at the adjusted relatively high level of the charge pump supply voltage V_DDAt the time of the lower stage, the analog signal S outputted from the analog circuit 104_ANAVoltage swing of the digital signal S is increased, thereby improving the digital signal S_DIGS/N. Combining the embodiments of FIG. 2 and FIG. 3, the charge pump supplies the voltage V_DDLess than or equal to twice the first source voltage V1.

Fig. 4 is a circuit diagram of an embodiment of the charge pump circuit 102 of fig. 1. Referring to fig. 4, the charge pump circuit 102 includes transistors M1, M2, M3, and M4, capacitors C1 and C2, switches SW1, SW2, SW3, and SW4, and a load capacitor C_LOAD. The transistors M1 and M2 define a first inverter INV1, the transistors M3 and M4 define a second inverter INV2, and the two inverters INV1 and INV2 are cross-coupled.

One end of the capacitor C1 is coupled to the output end OUT1 of the first inverter INV1 and the input end IN2 of the second inverter INV2, the other end of the capacitor C1 is coupled to the switches SW1 and SW2, the switch SW2 is coupled between the other end of the capacitor C1 and the first voltage input end T1, wherein the switches SW1 and SW2 are controlled by the control signals H1 and H2, respectively. In some embodiments, the control signals H1 and H2 are opposite to each other. In some embodiments, the control signals H1 and H2 are generated by the digital signal processing module 108, however, the disclosure is not limited thereto.

One end of the capacitor C2 is coupled to the output end OUT2 of the second inverter INV2 and the input end IN1 of the first inverter INV1, the other end of the capacitor C2 is coupled to the switches SW3 and SW4, the switch SW3 is coupled between the other end of the capacitor C2 and the first voltage input end T1, wherein the switches SW3 and SW4 are controlled by the control signals H1 and H2, respectively.

The charge pump circuit 102 selectively charges the capacitors C1 and C2 with the supply voltage received at the first voltage input terminal T1 or the second voltage input terminal T2 to charge the load capacitor C_LOADForm a charge pump supply voltage V_DD. The operation of the charge pump circuit 102 is described in detail in fig. 5 and 6.

Fig. 5 is a circuit diagram of an embodiment of operating the charge pump circuit 102 of fig. 4. Referring to fig. 5, transistors M1 and M4 are non-conductive, switches SW1 and SW3 are non-conductive, and switches SW2 and SW4 are conductive. Accordingly, the supply voltage received by the second voltage input terminal T2 charges the capacitor C2 through the transistor M3 and the switch SW 4; and, the supply voltage received by the first voltage input terminal T1 charges the capacitor C1 through the transistor M2 and the switch SW 2.

Fig. 6 is a circuit diagram of another embodiment of operating the charge pump circuit 102 of fig. 4. Referring to fig. 6, transistors M2 and M3 are non-conductive, switches SW2 and SW4 are non-conductive, and switches SW1 and SW3 are conductive. Accordingly, the supply voltage received by the second voltage input terminal T2 charges the capacitor C1 through the transistor M1 and the switch SW 1; and, the supply voltage received by the first voltage input terminal T1 charges the capacitor C2 through the transistor M4 and the switch SW 3.

In some embodiments, a chip includes sensor circuitry 10, for example, the chip may be a semiconductor chip implemented by different processes. In some embodiments, such as in implementations where the sensor circuitry 10 is applied to an image sensor, the sensor circuitry 10 is provided in the same chip as the pixel circuits. In some embodiments, such as for ultra-high pixel requirements, the sensor circuitry 10 is provided on one chip and the pixel circuitry is provided separately on another chip. In some embodiments, such as in implementations where the sensor circuitry 10 is applied to a touch system, the sensor circuitry 10 is provided in one chip and the pixel circuits are provided on a touch panel.

Fig. 7 is a schematic diagram of an embodiment of an electronic device 20 including a chip 22 of the sensor circuitry 10 shown in fig. 1. Referring to FIG. 7, the electronic device 20 includes a chip 22 and a display screen assembly 24. The electronic device 20 may be any handheld electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer.

The foregoing description has set forth briefly the features of certain embodiments of the present application so that those skilled in the art may more fully appreciate the various aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should understand that they can still make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.