阅读说明：本技术 Vdmos及其制造方法 (VDMOS and manufacturing method thereof ) 是由 王学良 *** 袁志巧 闵亚能 于 2018-06-28 设计创作，主要内容包括：本发明公开了一种VDMOS及其制造方法,VDMOS包括内置的续流二极管,续流二极管包括相邻的p型掺杂区和n型掺杂区,半导体衬底基片具有第一主面和第二主面,第一主面设置有第一目标掺杂区,第二主面设置有第二目标掺杂区,第一目标掺杂区为用于制作p型掺杂区的区域,第二目标掺杂区为用于制作n型掺杂区的区域,制造方法包括：向第一目标区域中掺杂p型杂质离子,以形成p型掺杂区；向第二目标区域中注入氢离子,以形成n型掺杂区和复合中心,复合中心用于降低续流二极管的临界饱和电压以及加速反向恢复时间。本发明采用氢离子注入工艺在n型掺杂层中形成复合中心,能够加速内置的续流二极管的反向恢复速度,提高性能。(The invention discloses a VDMOS and a manufacturing method thereof, wherein the VDMOS comprises a built-in freewheeling diode, the freewheeling diode comprises a p-type doped region and an n-type doped region which are adjacent, a semiconductor substrate is provided with a first main surface and a second main surface, the first main surface is provided with a first target doped region, the second main surface is provided with a second target doped region, the first target doped region is a region for manufacturing the p-type doped region, and the second target doped region is a region for manufacturing the n-type doped region, the manufacturing method comprises the following steps: doping p-type impurity ions into the first target region to form a p-type doped region; hydrogen ions are implanted into the second target region to form an n-type doped region and recombination centers for reducing the critical saturation voltage of the freewheeling diode and accelerating reverse recovery time. The invention adopts the hydrogen ion implantation process to form the recombination center in the n-type doped layer, can accelerate the reverse recovery speed of the built-in freewheeling diode and improve the performance.)

1. A method for manufacturing a VDMOS, the VDMOS including a built-in freewheeling diode, the freewheeling diode including a p-type doped region and an n-type doped region that are adjacent to each other, the VDMOS being manufactured on a semiconductor substrate, the semiconductor substrate having a first main surface and a second main surface, the first main surface being provided with a first target doped region, the second main surface being provided with a second target doped region, the first target doped region being adjacent to the second target doped region, the first target doped region being a region for manufacturing the p-type doped region, the second target doped region being a region for manufacturing the n-type doped region, the method comprising:

doping p-type impurity ions into the first target region to form the p-type doped region;

and implanting hydrogen ions into the second target region to form the n-type doped region and recombination centers, wherein the recombination centers are used for reducing the critical saturation voltage of the free-wheeling diode and accelerating the reverse recovery time of the free-wheeling diode.

2. The method of fabricating the VDMOS of claim 1, wherein prior to the step of implanting hydrogen ions into the second target region to form the n-type doped region and recombination centers, the method of fabricating the VDMOS further comprises the steps of:

arranging a mask on the surface of the semiconductor substrate, wherein the mask comprises a blocking area and a transmission area, and the blocking area is used for blocking the hydrogen ions from being implanted into the semiconductor substrate; the transmission area is used for hydrogen ions to pass through so as to implant the semiconductor substrate.

3. The method of fabricating the VDMOS of claim 1, wherein after the step of implanting hydrogen ions into the second target region to form the n-type doped region and recombination centers, the method of fabricating the VDMOS further comprises the steps of:

and carrying out electron irradiation on the n-type doped region of the freewheeling diode.

4. The method of fabricating the VDMOS of claim 1, wherein during the implanting of hydrogen ions into the second target region to form the n-doped region and recombination centers, the n-doped region of the freewheel diode is annealed to form the recombination centers within the n-doped region of the freewheel diode.

5. The VDMOS manufacturing method of claim 4, wherein the annealing step employs furnace annealing at 200-400 ℃ for 1-5 hours.

6. The method for manufacturing the VDMOS of claim 5, wherein the mask comprises a polyimide resin mask, or an aluminum mask, or a silicon nitride mask.

7. The method for fabricating the VDMOS of claim 6, wherein the thickness of the mask is 2 to 100 μm.

8. The method for fabricating the VDMOS of claim 4, wherein the annealing step employs laser annealing.

9. The method for fabricating the VDMOS according to claim 1, wherein the p-type impurity ions include aluminum ions or gallium ions or boron ions.

10. A VDMOS manufactured by the method for manufacturing a VDMOS according to any one of claims 1 to 9.