阅读说明：本技术 压环组件、工艺腔室和半导体处理设备 (Compression ring assembly, process chamber and semiconductor processing equipment ) 是由 王宽冒 郭浩 蒋秉轩 侯珏 郑金果 于 2018-06-28 设计创作，主要内容包括：本发明公开了一种压环组件、工艺腔室和半导体处理设备。包括隔热件、压环以及夹设在所述压环和所述隔热件之间的绝缘支撑件,所述隔热件位于所述压环上方,所述绝缘支撑件的两端分别与所述隔热件和所述压环抵接,并且,所述绝缘支撑件的两端的横截面尺寸大于其中部区域的横截面尺寸。本发明的压环组件,可以有效减少溅射粒子对绝缘支撑件上半部分的沉积,可有效保证绝缘支撑件保持绝缘状态,从而使得压环与隔热件之间保持绝缘状态,提高晶片的工艺良率,并可以有效降低射频功率损耗,降低制作成本。(The invention discloses a pressure ring assembly, a process chamber and semiconductor processing equipment. Establish including heat insulating part, clamping ring and clamp the clamping ring with insulating support piece between the heat insulating part, heat insulating part is located the clamping ring top, insulating support piece's both ends respectively with heat insulating part with the clamping ring butt, and, the cross sectional dimension at insulating support piece's both ends is greater than the regional cross sectional dimension in its middle part. The pressure ring assembly can effectively reduce the deposition of sputtering particles on the upper half part of the insulating support piece, and can effectively ensure that the insulating support piece keeps an insulating state, so that the pressure ring and the heat insulation piece keep an insulating state, the process yield of wafers is improved, the radio frequency power loss can be effectively reduced, and the manufacturing cost is reduced.)

1. A pressure ring assembly, comprising:

a heat insulation piece, a pressure ring and an insulation support piece clamped between the heat insulation piece and the pressure ring, wherein,

the heat insulation piece is positioned above the pressure ring;

the two ends of the insulating support part are respectively abutted with the heat insulation part and the pressing ring, and the cross section sizes of the two ends of the insulating support part are larger than that of the middle area of the insulating support part.

2. A pressure ring assembly according to claim 1, wherein the insulating support member is a columnar structure including a first mounting portion, a second mounting portion, and a first connecting portion connecting the first mounting portion and the second mounting portion; wherein the content of the first and second substances,

the first installation department with the heat insulating part butt, the second installation department with the clamping ring butt, and, the diameter of first installation department with the diameter of second installation department all is greater than the diameter of first connecting portion.

3. A pressure ring assembly according to claim 2, wherein the insulating support has dimensions that satisfy at least one of the following relationships:

d₁∈[6mm,12mm]；

d₂∈[9mm,15mm]；

d₃∈[5mm,11mm]；

h∈[17mm,23mm]；

h₁∈[1mm,5mm]；

h₂∈[4mm,8mm]；

wherein d is₁Is the diameter of the first mounting part, d₂Is the diameter of the second mounting part, d₃Is the diameter of the second connecting part, h is the height of the insulating support, h₁Is the height of the first mounting part, h₂Is the height of the second mounting portion.

4. A pressure ring assembly according to any of claims 1 to 3, wherein the pressure ring comprises a first pressure ring portion, a second pressure ring portion and a third pressure ring portion connecting the first pressure ring portion and the second pressure ring portion, the thermal insulation member comprising an upper thermal insulation member and a lower thermal insulation member connected to the upper thermal insulation member;

the first pressing ring part is positioned on the outer side of the insulating support, the second pressing ring part is positioned on the inner side of the insulating support, the third pressing ring part is abutted against the end part of the insulating support, and the upper surface of the first pressing ring part is lower than that of the second pressing ring part;

the lower heat insulation piece is abutted to the end part of the insulation support piece, and a first gap is formed between the lower heat insulation piece and the second pressure ring part;

the outer side wall of the upper heat insulation piece extends towards the direction of the first pressure ring part and at least exceeds the upper surface of the second pressure ring part, and a second gap is formed between the outer side wall of the upper heat insulation piece and the first pressure ring part.

5. A pressure ring assembly according to claim 4, wherein the height difference between the upper surface of the first pressure ring portion and the upper surface of the second pressure ring portion ranges from 5mm to 11 mm.

6. A pressure ring assembly according to claim 4, wherein there is a predetermined gap between the insulating support and the outer side wall of the upper insulator.

7. A pressure ring assembly according to any one of claims 1 to 3, wherein the heat insulator is provided with a first mounting hole at a position corresponding to the insulating support, the pressure ring is provided with a second mounting hole at a position corresponding to the insulating support, and both ends of the insulating support are respectively received in the first mounting hole and the second mounting hole.

8. A pressure ring assembly according to claim 7, wherein the first and second mounting holes satisfy the following relationship:

d₄∈[7mm,13mm]；

d₅∈[9mm,15mm]；

Dep₁∈[2mm,8mm]；

Dep₂∈[10mm,16mm]；

wherein d is₄Diameter of the first mounting hole, Dep₁Is the depth of the first mounting hole, d₅Diameter of the second mounting hole, Dep₂Is the depth of the second mounting hole.

9. A process chamber comprising a pressure ring assembly according to any of claims 1 to 8.

10. A semiconductor processing apparatus comprising the process chamber of claim 9.

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to a pressure ring assembly, a process chamber comprising the pressure ring assembly and semiconductor processing equipment comprising the process chamber.

Background

Magnetron sputtering, also known as physical vapor deposition, is one of the widely used methods for depositing thin films in the fabrication of integrated circuits.

At present, the physical vapor deposition technology is mainly applied to a through silicon via process, an electrostatic chuck is mainly adopted to support a wafer, and different from an integrated circuit copper interconnection process, the thickness of a deposited film in the through silicon via is large, and the electrostatic chuck cannot perform electrostatic adsorption on the wafer due to overlarge film stress; and the deposition of the silicon through hole film mostly occurs in the subsequent packaging process, the wafer is generally required to be supported by glass adhesion after being thinned, and the electrostatic chuck can not carry out electrostatic adsorption on the glass substrate. Therefore, in the magnetron sputtering of the through silicon via, the wafer needs to be fixed by using the pressure ring.

Fig. 1 is a schematic structural diagram of a pressure ring assembly in the first prior art. The pressure ring assembly 100 includes a pressure ring 110, a heat insulator 120, and an insulating supporter 130, the heat insulator 120 is fixed on the pressure ring 110 by the insulating supporter 130, and the insulating supporter 130 insulates the heat insulator 120 from the pressure ring 110. Thus, since the insulating support 130 has an insulating property, the insulating member 120 does not have an rf bias during the process, thereby ensuring that rf energy is effectively applied to the wafer to deposit a thin film on the inner wall of the through hole of the wafer.

However, as shown in fig. 2, since there is a gap between the thermal insulation member 120 and the pressure ring 110, during the film deposition process, a part of the sidewall of the insulation support member 130 is exposed in the plasma environment, deposited particles may be deposited on the exposed sidewall of the insulation support member 130 through the gap between the thermal insulation member 120 and the pressure ring 110, and as the deposited metal film becomes thicker, the insulation state between the thermal insulation member 120 and the pressure ring 110 gradually changes into the conduction state, and the rf power will be loaded on the thermal insulation member 120, which causes the rf power loss loaded on the wafer, and affects the process result.

Disclosure of Invention

The invention aims to solve at least one technical problem in the prior art, and provides a pressure ring assembly, a process chamber comprising the pressure ring assembly and a semiconductor processing device comprising the process chamber.

In order to achieve the above object, a first aspect of the present invention provides a pressure ring assembly including:

a heat insulation piece, a pressure ring and an insulation support piece clamped between the heat insulation piece and the pressure ring, wherein,

the heat insulation piece is positioned above the pressure ring;

the two ends of the insulating support part are respectively abutted with the heat insulation part and the pressing ring, and the cross section sizes of the two ends of the insulating support part are larger than that of the middle area of the insulating support part.

Optionally, the insulating support member is a columnar structure, and the columnar structure includes a first mounting portion, a second mounting portion, and a first connecting portion connecting the first mounting portion and the second mounting portion; wherein the content of the first and second substances,

the first installation department with the heat insulating part butt, the second installation department with the clamping ring butt, and, the diameter of first installation department with the diameter of second installation department all is greater than the diameter of first connecting portion.

Optionally, the size of the insulating support member at least satisfies one of the following relations:

d₁∈[6mm,12mm]；

d₂∈[9mm,15mm]；

d₃∈[5mm,11mm]；

h∈[17mm,23mm]；

h₁∈[1mm,5mm]；

h₂∈[4mm,8mm]；

wherein d is₁Is the diameter of the first mounting part, d₂Is the diameter of the second mounting part, d₃Is the diameter of the second connecting part, h is the height of the insulating support, h₁Is the first mounting partHeight of (h)₂Is the height of the second mounting portion.

Optionally, the pressing ring comprises a first pressing ring part, a second pressing ring part and a third pressing ring part connecting the first pressing ring part and the second pressing ring part, and the heat insulation piece comprises an upper heat insulation piece and a lower heat insulation piece connected with the upper heat insulation piece;

the first pressing ring part is positioned on the outer side of the insulating support, the second pressing ring part is positioned on the inner side of the insulating support, the third pressing ring part is abutted against the end part of the insulating support, and the upper surface of the first pressing ring part is lower than that of the second pressing ring part;

the lower heat insulation piece is abutted to the end part of the insulation support piece, and a first gap is formed between the lower heat insulation piece and the second pressure ring part;

the outer side wall of the upper heat insulation piece extends towards the direction of the first pressure ring part and at least exceeds the upper surface of the second pressure ring part, and a second gap is formed between the outer side wall of the upper heat insulation piece and the first pressure ring part.

Optionally, a height difference between the upper surface of the first pressure ring part and the upper surface of the second pressure ring part ranges from 5mm to 11 mm.

Optionally, a preset gap is formed between the insulating support and the outer side wall of the upper heat insulation piece.

Optionally, the heat insulation piece is provided with a first mounting hole at a position corresponding to the insulation support piece, the pressure ring is provided with a second mounting hole at a position corresponding to the insulation support piece, and two ends of the insulation support piece are respectively accommodated in the first mounting hole and the second mounting hole.

Optionally, the first mounting hole and the second mounting hole satisfy the following relation:

d ₄∈[7mm,13mm]；

d ₅∈[9mm,15mm]；

Dep₁∈[2mm,8mm]；

Dep₂∈[10mm,16mm]；

wherein d is₄Diameter of the first mounting hole, Dep₁Is the depth of the first mounting hole, d₅Diameter of the second mounting hole, Dep₂Is the depth of the second mounting hole.

In a second aspect of the invention, a process chamber is provided, comprising the above-mentioned pressure ring assembly.

In a third aspect of the invention, a semiconductor processing apparatus is provided, comprising the process chamber described above.

The invention provides a pressure ring assembly, a process chamber and a semiconductor processing device. The cross-sectional dimension of the two ends of the insulating support member is larger than that of the middle area of the insulating support member. Thus, when the pressure ring assembly is in an environment of sputtering particles (such as plasma and the like), a small amount of sputtering particles are deposited on the exposed side wall of the insulating support, and in the process of deposition, the sputtering particles can be deposited upwards from the middle area of the insulating support. The process yield of the wafer is improved, the radio frequency power loss can be effectively reduced, and the manufacturing cost is reduced.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic diagram of a prior art press ring assembly;

figure 2 is a partial schematic view of the pressure ring assembly shown in figure 1;

FIG. 3 is a schematic structural diagram of a pressure ring assembly according to an embodiment of the present disclosure;

figure 4 is a partial schematic view of the pressure ring assembly shown in figure 3;

fig. 5 is a schematic diagram of a dimensional structure of a pressure ring assembly according to an embodiment of the present invention.

Description of the reference numerals

100: a pressure ring assembly;

110: pressing a ring;

111: a first pressure ring part;

112: a second pressure ring part;

113: a third pressure ring part;

114: a second mounting hole;

120: a thermal insulation member;

121: an upper thermal insulation member;

122: a lower thermal insulation member;

123: a first mounting hole;

130: an insulating support;

131: a first mounting portion;

132: a second mounting portion;

133: the first connecting portion.

Detailed Description

The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.

As shown in fig. 3 and 4, a first aspect of the present invention relates to a pressure ring assembly 100, the pressure ring assembly 100 including a pressure ring 110, a heat insulator 120, and an insulating supporter 130. The pressure ring 110 may be used to overlap an edge region of an upper surface of a wafer (not shown) to hold the wafer. The thermal insulation member 120 is located above the pressure ring 110, and the thermal insulation member 120 can mainly ensure that introduced radio frequency power is effectively applied to the wafer, and can also effectively insulate heat, so that the temperature of the pressure ring 110 is prevented from being conducted to the wafer, and the temperature of the wafer can be effectively prevented from being too high. The insulating support 130 is interposed between the pressure ring 110 and the heat insulator 120, both ends of the insulating support 130 are respectively abutted against the heat insulator 120 and the pressure ring 110, and the cross-sectional dimension of both ends of the insulating support 130 is larger than that of the middle region thereof. For example, as shown in fig. 3 and 4, the cross-sectional size of the insulating support 130 may be increased in order from the middle region thereof to both ends. In other words, the insulating support 130 has a structure with thick ends and thin middle.

Specifically, when the pressure ring assembly 100 is in a sputtering particle (e.g., plasma, etc.) environment, a small amount of sputtering particles may be deposited on the exposed sidewall of the insulating support 130, e.g., as shown in fig. 3, the sputtering particles may be deposited on the sidewall of the left side of the insulating support 130. In the process of deposition, the sputtering particles start to be deposited upwards from the middle region of the insulating support 130, and since the top size of the insulating support 130 is larger than the middle region size, most of the sputtering particles will be deposited on the sidewall between the top end of the insulating support 130 and the middle region of the insulating support 130 during the upward deposition process of the part of the sputtering particles, so that the sputtering particles reaching the top end of the insulating support 130 are few or almost zero, and thus the insulating state between the insulating support 130 and the thermal insulation member 120 can be effectively ensured. The process yield of the wafer is improved, the radio frequency power loss can be effectively reduced, and the manufacturing cost is reduced.

As shown in fig. 3 and 4, the insulating support 130 may have a column structure including a first mounting portion 131, a second mounting portion 132, and a first connecting portion 133 connecting the first and second mounting portions 131 and 132. The first mounting portion 131 abuts against the heat insulator 120, the second mounting portion 132 abuts against the pressure ring 110, and both the diameter of the first mounting portion 131 and the diameter of the second mounting portion 132 are larger than the diameter of the first connecting portion 133.

Specifically, when the pressure ring assembly 100 is in a sputtering particle environment, a small amount of sputtering particles may be deposited on the first connection portion 133, and when the amount of sputtering particles contained in the first connection portion 133 is saturated, the sputtering particles may be deposited in the direction of the first or second mounting portion 131 or 132. Moreover, since the diameters of the first and second installation parts 131 and 132 are larger than the diameter of the first connection part 133, more sputtered particles can be deposited on the first and second installation parts 131 and 132 to be saturated, so that all sputtered particles sputtered on the insulating support 130 can be absorbed, and thus the amount of sputtered particles reaching the top of the first installation part 131 or the bottom of the second installation part 132 is almost zero, thereby effectively preventing the heat insulation member 120 from being conducted with the pressure ring 110.

In order to further effectively reduce the deposition of the sputtering particles on the top of the upper half of the insulating support 130, so as to effectively ensure the insulating state between the thermal shield 120 and the pressure ring 110, as shown in fig. 4 and 5, the size of the insulating support 130 satisfies the following relationship:

d₁∈[6mm,12mm] (1)

d₄₂∈[9mm,15mm] (2)

d₃∈[5mm,11mm] (3)

h∈[17mm,23mm] (4)

h₁∈[1mm,5mm] (5)

h₂∈[4mm,8m] (6)

wherein d is₁Is the diameter of the first mounting portion 131, d₂Is the diameter of the second mounting portion 132, d₃Is the diameter of the first connecting portion 133, h is the height of the insulating support 130, h₁Is the height of the first mounting portion 131, h₂Is the height of the second mounting portion 132.

As shown in fig. 3 and 4, the pressure ring 110 includes a first pressure ring part 111, a second pressure ring part 112, and a third pressure ring part 113 connecting the first pressure ring part 111 and the second pressure ring part 112, and the heat insulator 120 includes an upper heat insulator 121 and a lower heat insulator 122 connected to the upper heat insulator 121.

As shown in fig. 3 and 4, the first pressure ring part 111 is located on the outer side of the insulating support 130 (i.e., on the left side of the insulating support 130 shown in fig. 3, i.e., on the side away from the center of the pressure ring assembly 100), and the second pressure ring part 112 is located on the inner side of the insulating support 130 (i.e., on the right side of the insulating support 130 shown in fig. 3 and 4, i.e., on the side close to the center of the pressure ring assembly 100). The third pressure ring part 113 abuts against an end (a bottom end as shown in fig. 3) of the insulating support 130, and an upper surface of the first pressure ring part 111 is lower than an upper surface of the second pressure ring part 112, for example, a height difference therebetween may range from 5mm to 11 mm.

As shown in fig. 3 and 4, the lower heat insulator 122 abuts against an end portion of the insulating holder 130 (a tip end of the insulating holder 130 shown in fig. 3), and a first gap a is provided between the lower heat insulator 122 and the second pressure ring portion 112.

As shown in fig. 3 and 4, an outer sidewall of the upper heat insulator 121 extends toward the first crimp part 111 and at least beyond an upper surface of the second crimp part 112, and a second gap B is formed between the outer sidewall of the upper heat insulator 121 and the first crimp part 111.

In the pressure ring assembly 100 of this embodiment, the surface of the first pressure ring part 111 moves downward relative to the surface of the second pressure ring part 112, and the outer sidewall of the upper heat shield 121 is extended, so that the extended outer sidewall can shield and protect the upper half of the upper heat shield 130, and thus, the deposition of sputtering particles on the upper half of the upper heat shield 130 can be effectively reduced, and the insulation state between the heat shield 120 and the pressure ring 110 can be effectively ensured.

Optionally, the insulating support 130 has a predetermined gap with an outer sidewall of the upper heat insulator 121, for example, the predetermined gap may be 1mm or more. Thus, the insulation state between the pressure ring 110 and the heat insulator 120 can be effectively ensured.

Alternatively, as shown in fig. 4, the heat insulating member 120 is provided with a first mounting hole 123 at a position corresponding to the insulating support member 130, and the first mounting hole 123 is sized to match the first mounting portion 131 to receive the first mounting portion 131.

The pressure ring 110 is provided with a second mounting hole 114 at a position corresponding to the insulating support 130, and the size of the second mounting hole 114 matches with that of the second mounting portion 132 to accommodate the second mounting portion 132. Thus, as shown in fig. 4, it is effectively ensured that the insulating support 130 is completely hidden in the mounting holes of the thermal insulation member 120 and the pressure ring 110.

In order to further effectively reduce the deposition of the sputtering particles on the top of the upper half of the insulating support 130, so as to effectively ensure the insulating state between the thermal shield 120 and the pressure ring 110, the first mounting hole 123 and the second mounting hole 114 may satisfy the following relation:

d₄∈[7mm,13mm] (7)

d₅∈[9mm,15mm] (8)

Dep₁∈[2mm,8mm] (9)

Dep₂∈[10mm,16mm] (10)

wherein d is₄Is the diameter of the first mounting hole 123, Dep₁Depth of the first mounting hole 123, d₅Diameter of the second mounting hole 114, Dep₂The depth of the second mounting hole 114.

In a second aspect of the present invention, a process chamber is provided, comprising the above-mentioned pressure ring assembly 100.

The process chamber configured as described above with the pressure ring assembly 100 of this embodiment has a small amount of sputtered particles deposited on the exposed sidewalls of the insulating support 130 during the process. In the process of deposition, the sputtering particles start to be deposited upwards from the middle region of the insulating support 130, and since the top size of the insulating support 130 is larger than the middle region size, most of the sputtering particles will be deposited on the sidewall between the top end of the insulating support 130 and the middle region of the insulating support 130 during the upward deposition process of the part of the sputtering particles, so that the sputtering particles reaching the top end of the insulating support 130 are few or almost zero, and thus the insulating state between the insulating support 130 and the thermal insulation member 120 can be effectively ensured. The process yield of the wafer is improved, the radio frequency power loss can be effectively reduced, and the manufacturing cost is reduced.

In a third aspect of the invention, a semiconductor processing apparatus (not shown) is provided that includes a process chamber as described above.

The semiconductor processing apparatus having the structure of the present embodiment has the structure of the process chamber having the structure of the pressure ring assembly 100, when a process is performed, a small amount of sputtering particles are deposited on the exposed sidewall of the insulating support 130, and during the deposition, the sputtering particles start to be deposited upwards from the middle region of the insulating support 130, and since the top dimension of the insulating support 130 is greater than the middle region dimension, most of the sputtering particles will be deposited on the sidewall between the top end of the insulating support 130 and the middle region thereof during the upward deposition of the part of sputtering particles, so that the amount of sputtering particles reaching the top end of the insulating support 130 is small or almost zero, and the insulating state between the insulating support 130 and the heat shield 120 can be effectively ensured. The process yield of the wafer is improved, the radio frequency power loss can be effectively reduced, and the manufacturing cost is reduced.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.