阅读说明：本技术 Led驱动电源的集成电路及其制造方法及led驱动电源 (Integrated circuit of LED driving power supply, manufacturing method thereof and LED driving power supply ) 是由 全新 廖志强 黄丕渠 于 2019-08-21 设计创作，主要内容包括：本发明涉及一种LED驱动电源的集成电路及其制造方法及LED驱动电源,该LED驱动电源的集成电路包括控制芯片、功率MOSFET芯片、二极管芯片、引线框架及塑封料；引线框架包括第一芯片承载区、第二芯片承载区、第三芯片承载区及HV引脚,控制芯片通过绝缘胶焊接在第一芯片承载区,功率MOSFET芯片的漏极通过导电胶焊接在第二芯片承载区,二极管芯片的负极通过导电胶焊接在第三芯片承载区；二极管芯片的正极连接到第二芯片承载区；第二芯片承载区包括引线框架的漏极引脚,且漏极引脚露出塑封料外；第三芯片承载区与引线框架的HV引脚直接连接。提高了LED驱动电源的集成电路集成度,达到良好的散热效果。(The invention relates to an integrated circuit of an LED driving power supply, a manufacturing method thereof and the LED driving power supply, wherein the integrated circuit of the LED driving power supply comprises a control chip, a power MOSFET chip, a diode chip, a lead frame and a plastic package material; the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and an HV pin, the control chip is welded in the first chip bearing area through insulating glue, the drain electrode of the power MOSFET chip is welded in the second chip bearing area through conductive glue, and the cathode of the diode chip is welded in the third chip bearing area through conductive glue; the anode of the diode chip is connected to the second chip bearing area; the second chip bearing area comprises a drain electrode pin of the lead frame, and the drain electrode pin is exposed out of the plastic package material; the third chip carrying area is directly connected with the HV pin of the lead frame. The integrated circuit integration level of the LED driving power supply is improved, and a good heat dissipation effect is achieved.)

1. The integrated circuit of the LED driving power supply is characterized by comprising a control chip, a power MOSFET chip, a diode chip, a lead frame and a plastic package material; the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and an HV pin, the control chip is welded in the first chip bearing area through insulating glue, the drain electrode of the power MOSFET chip is welded in the second chip bearing area through conductive glue, the cathode of the diode chip is welded in the third chip bearing area through conductive glue, and the first chip bearing area, the second chip bearing area and the third chip bearing area are conducting sheets;

the anode of the diode chip is connected to the second chip bearing area through a bonding wire, so that the anode of the diode chip is connected with the drain of the power MOSFET chip; the second chip bearing area comprises a drain electrode pin of the lead frame, and the drain electrode pin is exposed out of the plastic package material;

the control chip is connected to the third chip bearing area through a bonding wire, so that the cathode of the diode chip is connected with the control chip; and the third chip carrying area is directly connected with the HV pin of the lead frame.

2. The integrated circuit of the LED driving power supply of claim 1, wherein the width of the drain lead exposed outside the molding compound is 0.875 mm ± 0.05 mm.

3. The integrated circuit of the LED driving power supply of claim 2, wherein the anode of the diode chip is connected to the second chip carrying region by two bonding wires.

4. The integrated circuit of the LED driving power supply according to claim 3, wherein the source of the power MOSFET chip is connected to the CS pin of the lead frame through two bonding wires, and the CS pin of the control chip is connected to the CS pin of the lead frame through one bonding wire.

5. The integrated circuit of the LED driving power supply according to claim 4, wherein the GATE pin of the control chip is connected with the GATE of the power MOSFET chip through a bonding wire; a GND pin of the control chip is connected to the first chip bearing area through a bonding wire, and the first chip bearing area is directly connected with the GND pin of the lead frame; and the ROVP pin of the control chip is connected with the ROVP pin of the lead frame through a bonding wire.

6. The integrated circuit of the LED driving power supply of claim 5, wherein the diode chip is an N-type substrate diode chip, the cathode of the diode chip is the substrate, and the anode of the diode chip is a P-type doped region.

7. The integrated circuit of the LED driving power supply according to claim 1, wherein the breakdown voltage V of the N-type substrate diode chip_ZThe reverse recovery time Trr of the N-type substrate diode chip is not less than 35 ns.

8. A method for manufacturing an integrated circuit of an LED driving power supply, comprising:

the method comprises the steps that a control chip, a power MOSFET chip, a diode chip and a lead frame are obtained, wherein the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and HV pins, and the first chip bearing area, the second chip bearing area and the third chip bearing area are conducting strips;

performing chip bonding, including bonding the control chip on the first chip carrying region through an insulating adhesive, bonding the drain electrode of the power MOSFET chip on the second chip carrying region through a conductive adhesive, and bonding the cathode of the diode chip on the third chip carrying region through a conductive adhesive;

performing an electrical connection process, including connecting the anode of the diode chip to the second chip carrying region through a bonding wire, so that the anode of the diode chip is connected to the drain of the power MOSFET chip, connecting the control chip to the third chip carrying region through a bonding wire, so that the cathode of the diode chip is connected to the control chip, and directly connecting the third chip carrying region to the HV pin of the lead frame;

baking the integrated circuit after the chip welding and electric connection treatment is finished;

sealing the baked integrated circuit by adopting a plastic package material, and exposing a drain electrode pin of the lead frame out of the plastic package material;

electroplating the integrated circuit after the sealing is finished;

cutting ribs of the integrated circuit after the electroplating is finished;

and testing the integrated circuit after the rib cutting is finished.

9. The method of claim 8, wherein the step of connecting the anode of the diode chip to the second chip carrying region via a bonding wire comprises:

connecting the anode of the diode chip to the second chip bearing area through two bonding wires;

the step of performing the electrical connection process further includes:

connecting a source electrode of the power MOSFET chip with a CS pin of the lead frame through two bonding wires, and connecting a CS pin of the control chip with a CS pin of the lead frame through one bonding wire;

connecting a GATE pin of the control chip with a grid electrode of the power MOSFET chip through a bonding wire; connecting a GND pin of the control chip to the first chip bearing area through a bonding wire, wherein the first chip bearing area is connected with the GND pin of the lead frame; and connecting the ROVP pin of the control chip with the ROVP pin of the lead frame through a bonding wire.

10. The method according to claim 8, wherein the baking is performed in a nitrogen atmosphere at 175 ± 5 ℃ for 2 hours;

the sealing step includes: controlling the surface temperature of the die to be 175 +/-10 ℃, the surface temperature of the preheating table to be 160 +/-10 ℃, the die assembly pressure to be 9MPa-16MPa, the injection pressure to be 5MPa-8MPa, the injection time to be 10s-15s and the curing time to be 110 s/die-120 s/die.

11. An LED driving power supply, characterized by comprising an integrated circuit of an LED driving power supply according to any one of claims 1 to 7.

Technical Field

The invention relates to the field of power supplies, in particular to an integrated circuit of an LED driving power supply, a manufacturing method of the integrated circuit and the LED driving power supply.

Background

Currently, an integrated circuit IC applied to a Light Emitting Diode (LED) driving power supply in the market has two structures according to power: (1) the IC is applied to the LED driving power supply with the output power less than or equal to 12W, and the internal structure of the IC is that an IC driving chip and a power chip are integrated. (2) The IC is applied to the LED driving power supply with the output power of more than or equal to 12W, and the internal structure of the IC driving power supply is that an IC driving chip and a power chip are two different individuals. When the LED driver IC1 is applied, a terminal customer needs to be connected with a diode (D1) externally to work normally (as shown in figure 1), the PCB space is large, the cavity is large, the chip mounting cost is high, and meanwhile, the consistency of the diode parameters and the parameters of the LED driver IC1 cannot be guaranteed; and because the internal devices of the integrated circuit IC1 of the LED driving power supply are more, heat generation is large, and device damage is easily caused.

Disclosure of Invention

Therefore, the terminal customer of the integrated circuit IC1 of the existing LED driving power supply needs to be connected with a diode (D1) externally to work normally when in application, the PCB space is large, the cavity is large, the chip mounting cost is high when the terminal customer designs, and meanwhile, the consistency of the diode parameters and the parameters of the LED driving IC1 cannot be guaranteed; and because the integrated circuit IC1 of LED driving power supply has many internal devices, generates heat greatly, causes the problem of device damage easily, provides an integrated circuit of LED driving power supply and manufacturing method and LED driving power supply thereof.

An integrated circuit of an LED driving power supply comprises a control chip, a power MOSFET chip, a diode chip, a lead frame and a plastic package material; the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and an HV pin, the control chip is welded in the first chip bearing area through insulating glue, the drain electrode of the power MOSFET chip is welded in the second chip bearing area through conductive glue, the cathode of the diode chip is welded in the third chip bearing area through conductive glue, and the first chip bearing area, the second chip bearing area and the third chip bearing area are conducting sheets;

the anode of the diode chip is connected to the second chip bearing area through a bonding wire, so that the anode of the diode chip is connected with the drain of the power MOSFET chip; the second chip bearing area comprises a drain electrode pin of the lead frame, and the drain electrode pin is exposed out of the plastic package material;

the control chip is connected to the third chip bearing area through a bonding wire, so that the cathode of the diode chip is connected with the control chip; and the third chip carrying area is directly connected with the HV pin of the lead frame.

In one embodiment, the width of the drain lead exposed outside the molding compound is 0.875 mm ± 0.05 mm.

In one embodiment, the anode of the diode chip is connected to the second chip carrying region by two bonding wires.

In one embodiment, the source of the power MOSFET chip is connected to the CS pin of the lead frame through two bonding wires, and the CS pin of the control chip is connected to the CS pin of the lead frame through one bonding wire.

In one embodiment, the GATE pin of the control chip is connected with the GATE of the power MOSFET chip through a bonding wire; a GND pin of the control chip is connected to the first chip bearing area through a bonding wire, and the first chip bearing area is directly connected with the GND pin of the lead frame; and the ROVP pin of the control chip is connected with the ROVP pin of the lead frame through a bonding wire.

In one embodiment, the diode chip is an N-type substrate diode chip, the cathode of the diode chip is the substrate, and the anode of the diode chip is a P-type doped region.

In one embodiment, the breakdown voltage V of the diode chip with N-type substrate_ZThe reverse recovery time Trr of the N-type substrate diode chip is not less than 35 ns.

A manufacturing method of an integrated circuit of an LED driving power supply comprises the following steps:

the method comprises the steps that a control chip, a power MOSFET chip, a diode chip and a lead frame are obtained, wherein the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and HV pins, and the first chip bearing area, the second chip bearing area and the third chip bearing area are conducting strips;

performing chip bonding, including bonding the control chip on the first chip carrying region through an insulating adhesive, bonding the drain electrode of the power MOSFET chip on the second chip carrying region through a conductive adhesive, and bonding the cathode of the diode chip on the third chip carrying region through a conductive adhesive;

performing an electrical connection process, including connecting the anode of the diode chip to the second chip carrying region through a bonding wire, so that the anode of the diode chip is connected to the drain of the power MOSFET chip, connecting the control chip to the third chip carrying region through a bonding wire, so that the cathode of the diode chip is connected to the control chip, and directly connecting the third chip carrying region to the HV pin of the lead frame;

baking the integrated circuit after the chip welding and electric connection treatment is finished;

sealing the baked integrated circuit by adopting a plastic package material, and exposing a drain electrode pin of the lead frame out of the plastic package material;

electroplating the integrated circuit after the sealing is finished;

cutting ribs of the integrated circuit after the electroplating is finished;

and testing the integrated circuit after the rib cutting is finished.

In one embodiment, the step of connecting the anode of the diode chip to the second chip carrying region through a bonding wire includes:

connecting the anode of the diode chip to the second chip bearing area through two bonding wires;

the step of performing the electrical connection process further includes:

connecting a source electrode of the power MOSFET chip with a CS pin of the lead frame through two bonding wires, and connecting a CS pin of the control chip with a CS pin of the lead frame through one bonding wire;

connecting a GATE pin of the control chip with a grid electrode of the power MOSFET chip through a bonding wire; connecting a GND pin of the control chip to the first chip bearing area through a bonding wire, wherein the first chip bearing area is connected with the GND pin of the lead frame; and connecting the ROVP pin of the control chip with the ROVP pin of the lead frame through a bonding wire.

In one embodiment, the baking step is performed in a nitrogen atmosphere, the baking temperature is 175 +/-5 ℃, and the baking time is 2 hours;

the sealing step includes: controlling the surface temperature of the die to be 175 +/-10 ℃, the surface temperature of the preheating table to be 160 +/-10 ℃, the die assembly pressure to be 9MPa-16MPa, the injection pressure to be 5MPa-8MPa, the injection time to be 10s-15s and the curing time to be 110 s/die-120 s/die.

An LED driving power supply comprising an integrated circuit of an LED driving power supply as described above.

According to the integrated circuit of the LED driving power supply, the manufacturing method thereof and the LED driving power supply, the diode chip is integrated on the integrated circuit of the LED driving power supply, so that a terminal customer can normally work without connecting a diode externally during application, and the integration level of the integrated circuit of the LED driving power supply is improved; respectively arranging a control chip, a power MOSFET chip and a diode chip in a chip bearing area, and exposing a drain electrode pin of a lead frame out of the plastic package material; and the third chip bearing area of the diode chip is directly connected with the HV pin of the lead frame, so that a good heat dissipation effect is achieved.

Drawings

FIG. 1 is a schematic diagram of an integrated circuit of a conventional LED driving power supply;

FIG. 2 is a schematic diagram of an internal structure of an integrated circuit of an LED driving power supply according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of an integrated circuit of an LED driving power supply according to an embodiment of the present invention;

fig. 4 is a structural diagram of an integrated circuit of an LED driving power supply according to an embodiment of the present invention after packaging;

FIG. 5 is a temperature rise and efficiency comparison graph of an integrated circuit of an improved LED drive power supply;

fig. 6 is a schematic flowchart of a method for manufacturing an integrated circuit of an LED driving power supply according to an embodiment of the present invention.

Detailed Description

Fig. 2 is a schematic diagram of an internal structure of an integrated circuit of an LED driving power supply according to an embodiment of the present invention, and fig. 3 is a schematic diagram of an integrated circuit of an LED driving power supply according to an embodiment of the present invention, where the integrated circuit of an LED driving power supply includes a control chip 1, a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip 2, a diode chip 3, a lead frame 4, and a molding compound; the lead frame 4 includes a first chip carrying area 41, a second chip carrying area 42, a third chip carrying area 43 and an HV pin, the control chip 1 is soldered to the first chip carrying area 41 through an insulating adhesive (a dark-colored portion at the bottom of the control chip 1), the drain of the power MOSFET chip 2 is soldered to the second chip carrying area 42 through a conductive adhesive (a dark-colored portion at the bottom of the power MOSFET chip 2), the cathode of the diode chip 3 is soldered to the third chip carrying area 43 through a conductive adhesive (a dark-colored portion at the bottom of the diode chip 3), and the first chip carrying area 41, the second chip carrying area 42 and the third chip carrying area 43 are conductive sheets (the conductive sheets may be copper sheets).

The anode of the diode chip 3 is connected to the second chip carrying region 42 through a bonding wire, so that the anode of the diode chip 42 is connected to the drain of the power MOSFET chip 2; the second chip carrying area 42 includes a drain lead D of the lead frame 4, and the drain lead D is exposed outside the molding compound after plastic molding.

The control chip 1 is connected to the third chip bearing area 43 through a bonding wire, so that the cathode of the diode chip 3 is connected with the control chip 1; and the third chip carrying area 43 is directly connected with the HV pin (chip high voltage supply pin) of the lead frame.

According to the integrated circuit of the LED driving power supply provided by the embodiment of the invention, the diode chip 3 is integrated in the integrated circuit of the LED driving power supply, so that a terminal client can normally work without externally connecting a diode during application, the integration level of the integrated circuit of the LED driving power supply is improved, and the system volume can be effectively reduced; meanwhile, one diode is omitted at the periphery of the LED lamp, so that the material cost and the labor cost can be effectively reduced; the control chip 1, the power MOSFET chip 2 and the diode chip 3 are respectively arranged in a chip bearing area, a drain electrode pin of the lead frame 4 is exposed out of the plastic package material, and the third chip bearing area 43 of the diode chip 3 is directly connected with the HV pin of the lead frame 4, so that a good heat dissipation effect is achieved, the temperature and the damage probability of a device in a terminal application circuit are reduced, and the market competitiveness is improved.

The analysis process for achieving the good heat dissipation effect comprises the following steps: the heat dissipation of the device after plastic packaging mainly passes through two aspects: (1) the plastic package body itself; (2) the contact area of the pins and the PCB and the parts of the pins exposed outside the plastic package body, the heating of the device of the integrated circuit is mainly concentrated on the power MOSFET chip 2 (because the control chip 1 is started under low voltage, and the power MOSFET chip 2 is started under high voltage), and in order to improve the heat dissipation effect of the device, the drain electrode pins of the lead frame 4 bearing the power MOSFET chip 2 are exposed outside the plastic package material, so that the area of the exposed pins of the device in the air is increased, and a good heat dissipation effect is achieved.

As shown in fig. 4, which is a structure diagram of the packaged integrated circuit of the LED driving power supply according to the embodiment of the present invention, the width of the drain lead of the lead frame after the package is completed, which can leak out of the molding compound, is 0.875 ± 0.05mm, so as to increase the area of the device lead exposed in the air, and achieve a good heat dissipation effect.

In addition, the third chip-bearing region 43 of the diode chip 3 is directly connected to the HV pin of the lead frame during design, so as to increase the heat dissipation of the diode chip 3.

In one embodiment, the purpose of connecting the anode of the diode chip 3 to the second chip carrying area 42 through two bonding wires is mainly two-fold: (1) effective conduction can be ensured; (2) can reduce the forward conduction voltage from the forward conduction voltage V_FFormula V_F＝I_FR, R ═ ρ × L/S, given: resistance deviceThe smaller the value R, the lower V_FIs also small, and the power loss from the switch P formula is V_F*I_FIt can be known that the switching loss power P and the forward conduction voltage V_FProportional, i.e. forward conducting voltage V_FThe smaller the switching loss power P, the lower the heating of the device itself.

In one embodiment, the source of the power MOSFET chip 2 is connected to the CS pin (current sampling pin for adjusting the output current) of the lead frame through two bonding wires for the purpose of: (1) effective conduction can be ensured; (2) the resistance can be reduced, the formula R is rho L/S, the resistance is known to be inversely proportional to the cross section area, and the cross section area can be increased through the two bonding wires, so that the resistance is reduced; (3) power loss from switch equation P_D＝I_D ²R, it is known that the smaller R, the smaller the switching loss, and the smaller the corresponding heat generation of the device.

The CS pin of the control chip 1 is connected to the CS pin of the lead frame 4 through a bonding wire.

In one embodiment, the GATE pin of the control chip 1 is connected to the GATE of the power MOSFET chip 2 through a bonding wire; the GND pin of the control chip 1 is connected to the first chip carrying area 41 through a bonding wire, and the first chip carrying area 41 is directly connected with the GND pin (chip ground) of the lead frame 4; the connection is mainly considered that the control chip 1 mainly radiates heat through the GND pin, and the lead frame 4 with large connecting area can better radiate heat through the GND pin.

The ROVP pin of the control chip 1 is connected to an ROVP pin (a no-load voltage setting pin) of the lead frame 4 through a bonding wire.

In one embodiment, the bonding wire may be a copper wire.

The diode chip 3 provided by the embodiment of the invention is an N-type substrate diode chip, the cathode of the diode chip 3 is a substrate, and the anode of the diode chip 3 is a P-type doped region. Breakdown voltage V of the diode chip with N-type substrate_ZMore than or equal to 650V. Because the working voltage of the diode chip 3 is between 300V and 400V when the switching power supply normally works, the instant voltage peak can be superposed on the diode chip 3 when the switching power supply is turned on or turned off, and the work efficiency is highThe working voltage exceeds 600V, which causes reverse breakdown of the diode chip 3, and in order to avoid damage to the diode chip 3, the reverse breakdown voltage V of the diode chip 3 is required during the parameter selection_Z≥650V。

The reverse recovery time Trr of the N-type substrate diode chip is less than or equal to 35 ns. Because the working frequency in the switching power supply is high, the switching speed of the corresponding diode chip is high, namely the reverse recovery time is short, so that the switching loss can be effectively reduced, the temperature rise of the device is well controlled, and the service life of the device is prolonged. Therefore, the reverse recovery time Trr of the diode chip is required to be less than or equal to 35nS during the parameter selection.

Therefore, the integrated circuit of the LED driving power supply provided by the embodiment of the invention can effectively ensure the parameter consistency (V) of the diode_Z650V or more and 35nS or less Trr), more effectively ensuring the product performance and improving the market competitiveness of the product.

FIG. 5 is a graph comparing temperature rise and efficiency of an integrated circuit of an improved LED driving power supply; from the comparison of the test results, it can be known that the integrated circuit JD9609SBCJ of the improved LED driving power supply is superior to the integrated circuit JD9609SBC of the LED driving power supply before improvement in temperature rise and efficiency.

The present invention also provides a method for manufacturing an integrated circuit based on the LED driving power supply, as shown in fig. 6, the method for manufacturing an integrated circuit of an LED driving power supply includes:

step S1: the method comprises the steps of obtaining a control chip, a power MOSFET chip, a diode chip and a lead frame, wherein the lead frame comprises a first chip bearing area, a second chip bearing area, a third chip bearing area and HV pins, and the first chip bearing area, the second chip bearing area and the third chip bearing area are conducting strips.

Step S2: and carrying out chip welding, including welding the control chip on the first chip bearing area through insulating glue, welding the drain electrode of the power MOSFET chip on the second chip bearing area through conductive glue, and welding the cathode of the diode chip on the third chip bearing area through conductive glue.

Step S3: and performing electric connection treatment, namely connecting the anode of the diode chip to the second chip bearing area through a bonding wire, so that the anode of the diode chip is connected with the drain electrode of the power MOSFET chip, connecting the control chip to the third chip bearing area through the bonding wire, so that the cathode of the diode chip is connected with the control chip, and directly connecting the third chip bearing area with the HV pin of the lead frame.

The step of connecting the anode of the diode chip to the second chip carrying area through the bonding wire includes:

the anode of the diode chip is connected to the second chip carrying area through two bonding wires, and the purpose mainly comprises two aspects: (1) effective conduction can be ensured; (2) can reduce the forward conduction voltage from the forward conduction voltage V_FFormula V_F＝I_FR, R ═ ρ × L/S, given: the smaller the resistance R, the lower V_FIs also small, and the power loss from the switch P formula is V_F*I_FIt can be known that the switching loss power P and the forward conduction voltage V_FProportional, i.e. forward conducting voltage V_FThe smaller the switching loss power P, the lower the heating of the device itself.

The above-mentioned direct connection of the third chip carrying area of the diode chip and the HV pin of the lead frame is also for increasing the heat dissipation of the diode chip.

The step of performing the electrical connection process further includes:

the source electrode of the power MOSFET chip is connected with the CS pin of the lead frame through two bonding wires, and the purpose of connection is as follows: (1) effective conduction can be ensured; (2) the resistance can be reduced, the formula R is rho L/S, the resistance is known to be inversely proportional to the cross section area, and the cross section area can be increased through the two bonding wires, so that the resistance is reduced; (3) power loss from switch equation P_D＝I_D ²R, it is known that the smaller R, the smaller the switching loss, and the smaller the corresponding heat generation of the device.

And connecting the CS pin of the control chip with the CS pin of the lead frame through a bonding wire.

Connecting a GATE pin of the control chip with a grid electrode of the power MOSFET chip through a bonding wire; connecting a GND pin of a control chip to a first chip bearing area through a bonding wire, wherein the first chip bearing area is connected with the GND pin of a lead frame; and connecting the ROVP pin of the control chip with the ROVP pin of the lead frame through a bonding wire.

In one embodiment, the bonding wire may be a copper wire.

Step S4: and baking the integrated circuit after the chip welding and electric connection treatment is finished.

The baking step is carried out in a nitrogen atmosphere, the baking temperature is 175 +/-5 ℃, and the baking time is 2 hours;

step S5: and sealing the baked integrated circuit by adopting a plastic package material, and exposing the drain electrode pin of the lead frame out of the plastic package material.

The heat dissipation of the device after plastic packaging mainly passes through two aspects: (1) the plastic package body itself; (2) the contact area of the pins and the PCB and the parts of the pins exposed outside the plastic package body, the heating of the device of the integrated circuit is mainly concentrated on the power MOSFET chip 2 (because the control chip 1 is started under low voltage, and the power MOSFET chip 2 is started under high voltage), and in order to improve the heat dissipation effect of the device, the drain electrode pins of the lead frame 4 bearing the power MOSFET chip 2 are exposed outside the plastic package material, so that the area of the exposed pins of the device in the air is increased, and a good heat dissipation effect is achieved.

The sealing step includes: controlling the surface temperature of the die to be 175 +/-10 ℃, the surface temperature of the preheating table to be 160 +/-10 ℃, the die assembly pressure to be 9MPa-16MPa, the injection pressure to be 5MPa-8MPa, the injection time to be 10s-15s and the curing time to be 110 s/die-120 s/die.

Step S6: and electroplating the integrated circuit after sealing.

Step S7: and (5) cutting ribs of the integrated circuit after the electroplating is finished.

Step S8: and testing the integrated circuit after the rib cutting is finished.

The invention also provides an LED driving power supply, which comprises the integrated circuit of the LED driving power supply.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.