阅读说明：本技术 一种石英晶片打磨工艺 (Quartz wafer polishing process ) 是由 夏良军 于 2019-10-10 设计创作，主要内容包括：本发明提供一种石英晶片打磨工艺,具体涉及石英晶片生产领域,S1、打磨压力为5至6psi,打磨转速为100至120rpm；S2、当监测系统的抛光打磨强度为最高强度的75％,即停止抛光打磨,清洗时间为65至70秒,清洗流量为600至800ml/min；S3、打磨压力为3至4psi,打磨转速为80至90rpm；S4、当监测系统的抛光打磨强度为最高强度时,即停止抛光打磨,清洗时间为90至105秒,清洗流量为600至800ml/min；S5、打磨压力为1至2psi,打磨转速为65至75rpm,第三次抛光打磨；S6、打磨时间为第一抛光打磨和第二次抛光打磨时间总和的5％至10％,即停止抛光打磨,清洗时间为50至60秒,清洗流量为400至500ml/min。本发明打磨工艺尺寸精准,可轻易满足生产需求。(The invention provides a quartz wafer polishing process, and particularly relates to the field of quartz wafer production, wherein S1 is used for polishing at a pressure of 5-6 psi and a polishing speed of 100-120 rpm; s2, stopping polishing when the polishing intensity of the monitoring system is 75% of the highest intensity, wherein the cleaning time is 65-70 seconds, and the cleaning flow is 600-800 ml/min; s3, grinding pressure is 3-4 psi, and grinding speed is 80-90 rpm; s4, stopping polishing when the polishing intensity of the monitoring system is the highest intensity, wherein the cleaning time is 90-105 seconds, and the cleaning flow is 600-800 ml/min; s5, polishing for the third time, wherein the polishing pressure is 1-2 psi, the polishing speed is 65-75 rpm; and S6, stopping polishing when the polishing time is 5 to 10 percent of the sum of the first polishing time and the second polishing time, wherein the cleaning time is 50 to 60 seconds, and the cleaning flow is 400 to 500 ml/min. The grinding process is accurate in size and can easily meet production requirements.)

1. A quartz wafer polishing process is characterized by comprising the following specific steps:

s1, polishing and grinding for the first time: polishing the quartz wafer for the first time at a polishing pressure of 5-6 psi and a polishing speed of 100-120 rpm;

s2, first cleaning: stopping polishing when the polishing intensity of the monitoring system is 75% of the highest intensity, and cleaning the surface of the quartz wafer for the first time, wherein the cleaning time is 65-70 seconds, and the cleaning flow is 600-800 ml/min;

s3, polishing and grinding for the second time: polishing the quartz wafer for the second time at a polishing pressure of 3-4 psi and a polishing speed of 80-90 rpm;

s4, secondary cleaning: stopping polishing when the polishing intensity of the monitoring system is the highest intensity, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 90-105 seconds, and the cleaning flow is 600-800 ml/min;

s5, polishing and grinding for the third time: polishing the quartz wafer for the third time at a polishing pressure of 1-2 psi and a polishing speed of 65-75 rpm;

s6, third cleaning: and (3) stopping polishing and grinding when the grinding time is 5 to 10 percent of the sum of the first polishing and grinding time and the second polishing and grinding time, and performing second cleaning on the surface of the quartz wafer, wherein the cleaning time is 50 to 60 seconds, and the cleaning flow is 400 to 500 ml/min.

2. A quartz wafer polishing process according to claim 1, characterized in that: polishing and grinding for the first time: the grinding pressure is 5.5psi, the grinding speed is 110rpm, and the quartz wafer is subjected to first polishing grinding.

3. A quartz wafer polishing process according to claim 2, characterized in that: cleaning for the first time: when the polishing intensity of the monitoring system is 75% of the highest intensity, the polishing is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 68 seconds, and the cleaning flow is 700 ml/min.

4. A quartz wafer polishing process according to claim 3, characterized in that: polishing and grinding for the second time: the lapping pressure was 3.5psi and the lapping speed was 85rpm, and the quartz wafer was subjected to a second polishing lapping.

5. A quartz wafer polishing process according to claim 4, characterized in that: and (3) cleaning for the second time: and stopping polishing when the polishing intensity of the monitoring system is the highest intensity, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 95 seconds, and the cleaning flow is 700 ml/min.

6. A quartz wafer polishing process according to claim 4, characterized in that: polishing and grinding for the third time: the lapping pressure was 1.5psi and the lapping rotation speed was 70rpm, and the quartz wafer was subjected to a third polishing lapping.

7. A quartz wafer polishing process according to claim 4, characterized in that: and (3) cleaning for the third time: and (3) stopping polishing when the polishing time is 8% of the sum of the first polishing time and the second polishing time, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 55 seconds, and the cleaning flow is 450 ml/min.

8. A quartz wafer polishing process according to claim 1, 3, 5 or 7, characterized in that: the pH value of the cleaning solution is 2 to 3.

Technical Field

The invention belongs to the field of quartz wafer production, and particularly relates to a quartz wafer polishing process.

Background

Quartz crystal is an important electronic material; when a quartz wafer cut in a certain direction is subjected to mechanical stress, an electric field or charge proportional to the stress is generated, and the phenomenon is called positive piezoelectric effect. Conversely, when the quartz wafer is subjected to an electric field, a strain proportional to the electric field is generated, and this phenomenon is called the inverse piezoelectric effect. The positive and negative effects are collectively called piezoelectric effect. The quartz crystal has not only piezoelectric effect but also excellent mechanical, electrical and temperature characteristics. The resonator, the oscillator, the filter and the like designed and manufactured by the frequency stabilizing and selecting circuit have outstanding advantages in the aspects of frequency stabilization and frequency selection;

the chemical mechanical polishing technology can obtain a flat surface without scratches and impurities, firstly, the surface material of the quartz wafer chemically reacts with an oxidant, a catalyst and the like in a polishing solution to generate a soft layer which is relatively easy to remove, then the soft layer is removed under the mechanical action of an abrasive in the polishing solution and a polishing pad to expose the surface of the workpiece again, and then the chemical reaction is carried out, so that the polishing of the surface of the workpiece is finished in the alternative implementation of a chemical action process and a mechanical action process, but the polishing process is important and needs to be further improved according to the aim of polishing the quartz wafer which meets the process level;

in view of the above disadvantages, there is a need for a quartz wafer polishing process, which has precise dimensions and can easily meet the production requirements.

Disclosure of Invention

The invention aims to provide a quartz wafer polishing process which is accurate in size and can easily meet production requirements.

The invention provides the following technical scheme:

a quartz wafer polishing process comprises the following specific steps:

s1, polishing and grinding for the first time: polishing the quartz wafer for the first time at a polishing pressure of 5-6 psi and a polishing speed of 100-120 rpm;

s2, first cleaning: stopping polishing when the polishing intensity of the monitoring system is 75% of the highest intensity, and cleaning the surface of the quartz wafer for the first time, wherein the cleaning time is 65-70 seconds, and the cleaning flow is 600-800 ml/min;

s3, polishing and grinding for the second time: polishing the quartz wafer for the second time at a polishing pressure of 3-4 psi and a polishing speed of 80-90 rpm;

s4, secondary cleaning: stopping polishing when the polishing intensity of the monitoring system is the highest intensity, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 90-105 seconds, and the cleaning flow is 600-800 ml/min;

s5, polishing and grinding for the third time: polishing the quartz wafer for the third time at a polishing pressure of 1-2 psi and a polishing speed of 65-75 rpm;

s6, third cleaning: and (3) stopping polishing and grinding when the grinding time is 5 to 10 percent of the sum of the first polishing and grinding time and the second polishing and grinding time, and performing second cleaning on the surface of the quartz wafer, wherein the cleaning time is 50 to 60 seconds, and the cleaning flow is 400 to 500 ml/min.

Preferably, the first polishing and grinding: the grinding pressure is 5.5psi, the grinding speed is 110rpm, and the quartz wafer is subjected to first polishing grinding.

Preferably, the first washing: when the polishing intensity of the monitoring system is 75% of the highest intensity, the polishing is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 68 seconds, and the cleaning flow is 700 ml/min.

Preferably, the second polishing and grinding: the lapping pressure was 3.5psi and the lapping speed was 85rpm, and the quartz wafer was subjected to a second polishing lapping.

Preferably, the second cleaning: and stopping polishing when the polishing intensity of the monitoring system is the highest intensity, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 95 seconds, and the cleaning flow is 700 ml/min.

Preferably, the third polishing and grinding: the lapping pressure was 1.5psi and the lapping rotation speed was 70rpm, and the quartz wafer was subjected to a third polishing lapping.

Preferably, the third washing: and (3) stopping polishing when the polishing time is 8% of the sum of the first polishing time and the second polishing time, and cleaning the surface of the quartz wafer for the second time, wherein the cleaning time is 55 seconds, and the cleaning flow is 450 ml/min.

Preferably, the pH of the cleaning solution is 2 to 3.

The invention has the beneficial effects that:

the quartz wafer polishing device can effectively reduce residues and corrosion on wafers, avoids impurity retention through different pressures, polishing speeds and cleaning speeds, and realizes accurate polishing of quartz wafers.

Detailed Description