阅读说明：本技术 单环洼槽型曲面阴极三背弧层门控结构的发光背光源 (Light-emitting backlight source with single-ring depressed-groove type curved-surface cathode three-back-arc-layer gating structure ) 是由 李玉魁 于 2019-10-12 设计创作，主要内容包括：本发明公开了一种单环洼槽型曲面阴极三背弧层门控结构的发光背光源,包括真空封闭体以及位于真空封闭体内的消气剂附属元件；所述的真空封闭体由前透硬玻璃板、后透硬玻璃板和玻璃窄框条构成；在前透硬玻璃板上设有阳极底膜传电层、阳极弯连银电层和薄发光层,所述的阳极底膜传电层和阳极弯连银电层相连,所述的薄发光层制作在阳极底膜传电层上面；在后透硬玻璃板上设有单环洼槽型曲面阴极三背弧层门控结构。具有制作工艺可靠、发光背光源的发光灰度可调节性能良好的优点。(The invention discloses a light-emitting backlight source of a single-ring hollow groove type curved surface cathode three-back arc layer gating structure, which comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the front transparent hard glass plate is provided with an anode bottom film electricity transmission layer, an anode bending silver electricity layer and a thin light-emitting layer, the anode bottom film electricity transmission layer is connected with the anode bending silver electricity layer, and the thin light-emitting layer is manufactured on the anode bottom film electricity transmission layer; and a single-ring hollow groove-shaped curved surface cathode three-back arc layer gating structure is arranged on the rear transparent hard glass plate. The method has the advantages of reliable manufacturing process and good adjustable performance of the light-emitting gray scale of the light-emitting backlight source.)

1. A light-emitting backlight source of a single-ring depressed groove type curved surface cathode three-back arc layer gating structure comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the method is characterized in that: the front transparent hard glass plate is provided with an anode bottom film electricity transmission layer, an anode bending silver electricity layer and a thin light-emitting layer, the anode bottom film electricity transmission layer is connected with the anode bending silver electricity layer, and the thin light-emitting layer is manufactured on the anode bottom film electricity transmission layer; and a single-ring hollow groove-shaped curved surface cathode three-back arc layer gating structure is arranged on the rear transparent hard glass plate.

2. The single hollow curved surface cathode three-back arc layer gated structure light emitting backlight of claim 1, wherein: the substrate of the single-ring hollow groove type curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate; forming a grey-black spacing layer through the printed insulating slurry layer on the hard glass plate; the printed silver paste layer on the grey-black spacing layer forms a cathode bending silver electric layer; the cathode is bent and connected with the printed insulating slurry layer on the silver layer to form a cathode ring groove substrate layer; the lower surface of the cathode ring groove substrate layer is a circular plane and is positioned on the cathode bending silver layer, the upper surface of the cathode ring groove substrate layer is a circular plane, the upper surface and the lower surface of the cathode ring groove substrate layer are parallel to each other, the diameter of the upper surface of the cathode ring groove substrate layer is equal to that of the lower surface of the cathode ring groove substrate layer, and the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode ring groove substrate layer are coincident with each other; a square hole is formed in the cathode ring groove substrate layer, and a cathode curve connecting line layer is formed on a silver paste layer printed in the square hole; the cathode curved connecting line layer and the cathode curved connecting silver layer are communicated with each other; the printed silver paste layer on the upper surface of the cathode ring groove substrate layer forms a cathode curve connecting line two layer; the outer edge of the second layer of the cathode curve connecting line is flush with the outer edge of the upper surface of the cathode ring groove substrate layer; the second layer of the cathode curve connecting line and the first layer of the cathode curve connecting line are communicated with each other; the printed insulating slurry layer on the second layer of the cathode curve connecting line forms an upper outer layer of the cathode ring groove base; the lower surface of the upper outer layer of the cathode ring groove base is a hollow ring surface and is positioned on the two layers of the cathode curved connecting line, the outer ring edge of the lower surface of the upper outer layer of the cathode ring groove base is flush with the outer edge of the upper surface of the cathode ring groove substrate layer, the outer side surface of the upper outer layer of the cathode ring groove base is a cylindrical surface, the inner side surface of the upper outer layer of the cathode ring groove base is a cylindrical surface, the upper edge height of the outer side surface of the upper outer layer of the cathode ring groove base is lower than the upper edge height of the inner side surface of the upper outer layer of the cathode ring groove base, the upper surface of the upper outer layer of the; the upper outer layer of the cathode ring groove base is provided with square holes, and a silver paste layer printed in the square holes forms a cathode curve connecting line three layer; the cathode curve connecting line three layer and the cathode curve connecting line two layer are communicated with each other; the printed silver paste layer on the upper surface of the outer layer on the cathode ring groove base forms a cathode depressed groove bottom electrode; the bottom electrode of the cathode depressed groove and the three layers of the cathode curve connecting lines are communicated with each other; the printed insulating slurry layer on the second layer of the cathode curve connecting line forms an upper inner layer of the cathode ring groove base; the lower surface of the upper inner layer of the cathode ring groove base is a circular plane and is positioned on the two layers of the cathode curve connecting line, the upper surface of the upper inner layer of the cathode ring groove base is a circular plane, and the outer side surface of the upper inner layer of the cathode ring groove base is an inclined circular table surface; the printed insulating slurry layer on the grey-black spacing layer forms a gate electrode back arc bottom layer; the lower surface of the first layer of the gate pole back arc bottom is a plane and is positioned on the grey-black interval layer, a circular hole is formed in the first layer of the gate pole back arc bottom, the grey-black interval layer, the cathode bending silver electric layer, the cathode ring groove base layer, the first layer of the cathode bending connecting line, the second layer of the cathode bending connecting line, the upper outer layer of the cathode ring groove base, the third layer of the cathode bending connecting line, the bottom electrode of the cathode depressed groove and the upper inner layer of the cathode ring groove base are exposed out of the circular hole, and the inner side surface of the circular hole of the first layer; a gate electrode three-arc lower electrode layer is formed by a printed silver paste layer on the bottom layer of the gate electrode back arc; the gate pole three-arc lower electrode layer is in a convex arc shape and is positioned on the bottom layer of the gate pole back arc, the convex direction of the gate pole three-arc lower electrode layer faces the direction far away from the inner side of the bottom layer of the gate pole back arc, the front tail end of the gate pole three-arc lower electrode layer faces the direction of the inner side of the circular hole on the bottom layer of the gate pole back arc but is not contacted with the inner side of the circular hole on the bottom layer of the gate pole back arc, and the rear tail end of the gate pole three-arc lower electrode layer faces the direction; the printed insulating slurry layer on the gate pole three-arc lower electrode layer forms a gate pole back arc bottom layer II; the gate electrode three-arc front electrode layer is formed by the printed silver paste layers on the gate electrode back arc bottom layer and the gate electrode back arc bottom layer; the front end of the gate electrode three-arc front electrode layer faces the inner side surface of a round hole on the bottom of the gate electrode back arc and is flush with the inner side surface of the round hole on the bottom of the gate electrode back arc, the rear end of the gate electrode three-arc front electrode layer faces the inner side surface of the round hole on the bottom of the gate electrode back arc, the front end of the gate electrode three-arc front electrode layer is low in height, the rear end of the gate electrode three-arc front electrode layer is high in height, and the rear end of the gate electrode three-arc front electrode layer is not connected with the front end of the gate electrode; the gate pole three-arc front electrode layer and the gate pole three-arc lower electrode layer are communicated with each other; the gate electrode back arc bottom layer and the printed silver paste layer on the gate electrode back arc bottom two layers form a gate electrode three-arc back electrode layer; the gate pole three-arc back electrode layer is in a concave arc shape, the front tail end of the gate pole three-arc back electrode layer faces the inner side face of the circular hole on the bottom of the gate pole back arc but is not contacted with the inner side face of the circular hole on the bottom of the gate pole back arc, the rear tail end of the gate pole three-arc back electrode layer faces the direction far away from the inner side face of the circular hole on the bottom of the gate pole back arc, the front tail end of the gate pole three-arc back electrode layer is not connected with the rear tail end of the gate pole three-arc front electrode layer, and the front tail end of the gate pole; the gate pole three-arc back electrode layer and the gate pole three-arc lower electrode layer are communicated with each other; the insulating slurry layer printed on the grey-black spacing layer forms three layers of gate electrode back arc bottom; the printed silver paste layers on the upper surfaces of the three layers of the gate electrode back arc bottom form a gate electrode bending connection silver electric layer; the front tail end of the gate electrode bending silver layer is connected with the rear tail end of the gate electrode three-arc rear electrode layer; the gate electrode bending silver layer and the gate electrode three-arc back electrode layer are communicated with each other; the gate electrode three-arc front electrode layer, the gate electrode three-arc back electrode layer and the gate electrode back arc bottom layer are formed by printed insulating slurry layers to form a gate electrode back arc bottom four layers; the carbon nanotube layer is manufactured on the bottom electrode of the cathode depressed groove.

3. The single hollow curved surface cathode three-back arc layer gated structure light emitting backlight of claim 1, wherein: the fixed position of the single-ring depression groove type curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate.

4. The single hollow curved surface cathode three-back arc layer gated structure light emitting backlight of claim 1, wherein: the rear transparent hard glass plate is made of plane borosilicate glass or soda-lime glass.

5. The manufacturing process of the single-hollow-groove-shaped curved-surface cathode three-back arc layer gating structure light-emitting backlight source as claimed in claim 1, is characterized by comprising the following steps of:

1) manufacturing a rear transparent hard glass plate: scribing the plane glass to form a rear transparent hard glass plate;

2) manufacturing a gray-black spacing layer: printing insulating slurry on the rear transparent hard glass plate, and forming a grey-black spacing layer after baking and sintering processes;

3) and (3) manufacturing a cathode bending connection silver electric layer: printing silver paste on the grey black interlayer, and forming a cathode bending silver connection electric layer after baking and sintering processes;

4) preparing a cathode ring groove base layer: printing insulating slurry on the cathode bending silver layer, and forming a cathode ring groove substrate layer after baking and sintering processes;

5) and (3) manufacturing a cathode curve connecting line layer: printing silver paste in square holes of the cathode ring groove substrate layer, and forming a cathode curve connecting line layer after baking and sintering processes;

6) and (3) manufacturing a cathode curve connecting line two layer: printing silver paste on the upper surface of the cathode ring groove substrate layer, and forming a cathode curve connecting line two layer after baking and sintering processes;

7) manufacturing an upper outer layer of the cathode ring groove base: printing insulating slurry on the second layer of the cathode curve connecting line, and forming an upper outer layer of the cathode ring groove base after baking and sintering processes;

8) and (3) manufacturing three layers of cathode curve connecting lines: silver paste is printed in the square hole on the outer layer of the cathode ring groove base, and three layers of cathode curve connecting lines are formed after baking and sintering processes;

9) and (3) manufacturing a bottom electrode of the cathode depressed groove: printing silver paste on the upper surface of the outer layer on the cathode ring groove base, and forming a cathode depression groove bottom electrode after baking and sintering processes;

10) manufacturing an upper inner layer of the cathode ring groove base: printing insulating slurry on the second layer of the cathode curve connecting line, and forming an upper inner layer of the cathode ring groove base after baking and sintering processes;

11) manufacturing a gate electrode back arc bottom layer: printing insulating slurry on the grey-black spacing layer, and forming a gate electrode back arc bottom layer after baking and sintering processes;

12) manufacturing a gate electrode three-arc lower electrode layer: printing silver paste on the bottom layer of the gate back arc, and forming a gate three-arc lower electrode layer after baking and sintering processes;

13) manufacturing a gate electrode back arc bottom layer: printing insulating slurry on the gate pole three-arc lower electrode layer, and forming a gate pole back arc bottom two layer after baking and sintering processes;

14) manufacturing a gate electrode three-arc front electrode layer: printing silver paste on the first gate electrode back arc bottom layer and the second gate electrode back arc bottom layer, and forming a gate electrode three-arc front electrode layer after baking and sintering processes;

15) manufacturing a gate electrode three-arc back electrode layer: printing silver paste on the first gate electrode back arc bottom layer and the second gate electrode back arc bottom layer, and forming a gate electrode three-arc back electrode layer after baking and sintering processes;

16) manufacturing three layers of a gate pole back arc bottom: printing insulating slurry on the grey-black spacing layer, and forming a gate electrode back arc bottom three layers after baking and sintering processes;

17) manufacturing a gate electrode bending connection silver electric layer: silver paste is printed on the upper surfaces of the three layers of the bottom of the gate electrode back arc, and a gate electrode bending and silver connecting electric layer is formed after baking and sintering processes;

18) manufacturing four layers of a gate electrode back arc bottom: printing insulating slurry on the gate pole three-arc front electrode layer, the gate pole three-arc rear electrode layer and the gate pole back arc bottom two layers, and forming a gate pole back arc bottom four layer after baking and sintering processes;

19) cleaning a single-ring depression groove type curved surface cathode three-back arc layer gating structure: cleaning the surface of the gate control structure with the single-ring depressed groove type curved surface cathode and the three back arc layers to remove impurities and dust;

20) manufacturing a carbon nanotube layer: printing carbon nanotubes on the cathode depression bottom electrode to form a carbon nanotube layer;

21) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the electron emission characteristic;

22) manufacturing a front transparent hard glass plate: scribing the plane glass to form a front transparent hard glass plate;

23) preparing a conductive layer of the anode bottom film: etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form an anode bottom film power transmission layer;

24) and (3) manufacturing an anode bending connection silver electric layer: printing silver paste on the front transparent hard glass plate, and forming an anode bending silver electric layer after baking and sintering processes;

25) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode basement membrane conductive layer, and forming a thin light-emitting layer after a baking process;

26) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, assembling the front hard glass plate, the rear hard glass plate and the glass narrow frame strip together, and fixing by using a clamp;

27) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.

6. The manufacturing process of the single-hollow-groove-shaped curved-surface cathode three-back arc layer gating structure light-emitting backlight source as claimed in claim 5, wherein the manufacturing process comprises the following steps: in the step 24, silver paste is printed on the non-display area of the front transparent hard glass plate, and after the baking process, the maximum baking temperature is as follows: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.

7. The manufacturing process of the single-hollow-groove-shaped curved-surface cathode three-back arc layer gating structure light-emitting backlight source as claimed in claim 5, wherein the manufacturing process comprises the following steps: in the step 25, the fluorescent powder is printed on the anode bottom film conductive layer of the front transparent hard glass plate, and then the front transparent hard glass plate is placed in an oven for baking, wherein the highest baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.

8. The manufacturing process of the single-hollow-groove-shaped curved-surface cathode three-back arc layer gating structure light-emitting backlight source as claimed in claim 5, wherein the manufacturing process comprises the following steps: in the step 27, the packaging process includes baking the light-emitting backlight device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.

Technical Field

The invention belongs to the field of planar display technology, the field of vacuum science and technology, the field of semiconductor science and technology, the field of microelectronic science and technology, the field of nano science and technology, the field of integrated circuit science and technology and the field of photoelectron science and technology, and relates to the manufacture of planar light-emitting backlights, in particular to the manufacture of planar light-emitting backlights with carbon nano tube cathodes, in particular to a light-emitting backlight with a single-ring hollow groove type curved surface cathode three-back arc layer gate control structure and a manufacture process thereof.

Background

The carbon nano tube has small tip curvature radius, good conductivity and excellent mechanical strength, is a suitable cathode manufacturing material, and is widely applied to various vacuum components. For the manufacture of carbon nanotube cathodes, many researchers have conducted extensive research on the preparation process of carbon nanotubes, the post-treatment process of carbon nanotubes for improving their electron emission characteristics, and the proportioning process of carbon nanotube slurry. A light-emitting backlight using carbon nanotubes as a cathode material is an apparatus having good image display performance.

However, in a light emitting backlight of a three-pole structure, there are also some technical difficulties to be solved. For example, on the one hand, the controllability of the gate voltage on the electron emission of the carbon nanotube layer is poor. The carbon nanotube cathode cannot emit electrons at all by a small gate voltage, and the carbon nanotube cathode is easy to lose control by a large gate voltage; meanwhile, the electron emission quantity of the carbon nanotube cathode does not strictly change along with the change of the gate voltage, and the electron emission quantity is the expression that the gate voltage loses a good control function on the carbon nanotube cathode. In the second aspect, the electron emission efficiency of the carbon nanotube cathode is low. Without a sufficient number of carbon nanotubes to simultaneously emit electrons, a large cathode current of the light emitting backlight cannot be formed. However, some carbon nanotubes in the carbon nanotube cathode do not emit electrons at all, and lose their essential functions as a cathode; some carbon nanotubes, although capable of emitting electrons, emit electrons in an amount too small to sufficiently function as an electron source. In a third aspect, the area of the carbon nanotube layer is small. That is, the number of carbon nanotubes is too small. These technical difficulties also require careful study and corresponding effective measures.

Disclosure of Invention

The purpose of the invention is as follows: the invention aims to overcome the defects and shortcomings in the light-emitting backlight source and provide the light-emitting backlight source with the single-ring depressed-groove type curved-surface cathode three-back arc layer gating structure and the manufacturing process thereof, wherein the manufacturing process is reliable, and the light-emitting gray scale of the light-emitting backlight source is good in adjusting performance.

The technical scheme is as follows: the invention relates to a light-emitting backlight source of a single-ring depressed groove type curved surface cathode three-back arc layer gating structure, which comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the front transparent hard glass plate is provided with an anode bottom film electricity transmission layer, an anode bending silver electricity layer and a thin light-emitting layer, the anode bottom film electricity transmission layer is connected with the anode bending silver electricity layer, and the thin light-emitting layer is manufactured on the anode bottom film electricity transmission layer; and a single-ring hollow groove-shaped curved surface cathode three-back arc layer gating structure is arranged on the rear transparent hard glass plate.

Specifically, the substrate of the single-ring hollow groove type curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate; forming a grey-black spacing layer through the printed insulating slurry layer on the hard glass plate; the printed silver paste layer on the grey-black spacing layer forms a cathode bending silver electric layer; the cathode is bent and connected with the printed insulating slurry layer on the silver layer to form a cathode ring groove substrate layer; the lower surface of the cathode ring groove substrate layer is a circular plane and is positioned on the cathode bending silver layer, the upper surface of the cathode ring groove substrate layer is a circular plane, the upper surface and the lower surface of the cathode ring groove substrate layer are parallel to each other, the diameter of the upper surface of the cathode ring groove substrate layer is equal to that of the lower surface of the cathode ring groove substrate layer, and the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode ring groove substrate layer are coincident with each other; a square hole is formed in the cathode ring groove substrate layer, and a cathode curve connecting line layer is formed on a silver paste layer printed in the square hole; the cathode curved connecting line layer and the cathode curved connecting silver layer are communicated with each other; the printed silver paste layer on the upper surface of the cathode ring groove substrate layer forms a cathode curve connecting line two layer; the outer edge of the second layer of the cathode curve connecting line is flush with the outer edge of the upper surface of the cathode ring groove substrate layer; the second layer of the cathode curve connecting line and the first layer of the cathode curve connecting line are communicated with each other; the printed insulating slurry layer on the second layer of the cathode curve connecting line forms an upper outer layer of the cathode ring groove base; the lower surface of the upper outer layer of the cathode ring groove base is a hollow ring surface and is positioned on the two layers of the cathode curved connecting line, the outer ring edge of the lower surface of the upper outer layer of the cathode ring groove base is flush with the outer edge of the upper surface of the cathode ring groove substrate layer, the outer side surface of the upper outer layer of the cathode ring groove base is a cylindrical surface, the inner side surface of the upper outer layer of the cathode ring groove base is a cylindrical surface, the upper edge height of the outer side surface of the upper outer layer of the cathode ring groove base is lower than the upper edge height of the inner side surface of the upper outer layer of the cathode ring groove base, the upper surface of the upper outer layer of the; the upper outer layer of the cathode ring groove base is provided with square holes, and a silver paste layer printed in the square holes forms a cathode curve connecting line three layer; the cathode curve connecting line three layer and the cathode curve connecting line two layer are communicated with each other; the printed silver paste layer on the upper surface of the outer layer on the cathode ring groove base forms a cathode depressed groove bottom electrode; the bottom electrode of the cathode depressed groove and the three layers of the cathode curve connecting lines are communicated with each other; the printed insulating slurry layer on the second layer of the cathode curve connecting line forms an upper inner layer of the cathode ring groove base; the lower surface of the upper inner layer of the cathode ring groove base is a circular plane and is positioned on the two layers of the cathode curve connecting line, the upper surface of the upper inner layer of the cathode ring groove base is a circular plane, and the outer side surface of the upper inner layer of the cathode ring groove base is an inclined circular table surface; the printed insulating slurry layer on the grey-black spacing layer forms a gate electrode back arc bottom layer; the lower surface of the first layer of the gate pole back arc bottom is a plane and is positioned on the grey-black interval layer, a circular hole is formed in the first layer of the gate pole back arc bottom, the grey-black interval layer, the cathode bending silver electric layer, the cathode ring groove base layer, the first layer of the cathode bending connecting line, the second layer of the cathode bending connecting line, the upper outer layer of the cathode ring groove base, the third layer of the cathode bending connecting line, the bottom electrode of the cathode depressed groove and the upper inner layer of the cathode ring groove base are exposed out of the circular hole, and the inner side surface of the circular hole of the first layer; a gate electrode three-arc lower electrode layer is formed by a printed silver paste layer on the bottom layer of the gate electrode back arc; the gate pole three-arc lower electrode layer is in a convex arc shape and is positioned on the bottom layer of the gate pole back arc, the convex direction of the gate pole three-arc lower electrode layer faces the direction far away from the inner side of the bottom layer of the gate pole back arc, the front tail end of the gate pole three-arc lower electrode layer faces the direction of the inner side of the circular hole on the bottom layer of the gate pole back arc but is not contacted with the inner side of the circular hole on the bottom layer of the gate pole back arc, and the rear tail end of the gate pole three-arc lower electrode layer faces the direction; the printed insulating slurry layer on the gate pole three-arc lower electrode layer forms a gate pole back arc bottom layer II; the gate electrode three-arc front electrode layer is formed by the printed silver paste layers on the gate electrode back arc bottom layer and the gate electrode back arc bottom layer; the front end of the gate electrode three-arc front electrode layer faces the inner side surface of a round hole on the bottom of the gate electrode back arc and is flush with the inner side surface of the round hole on the bottom of the gate electrode back arc, the rear end of the gate electrode three-arc front electrode layer faces the inner side surface of the round hole on the bottom of the gate electrode back arc, the front end of the gate electrode three-arc front electrode layer is low in height, the rear end of the gate electrode three-arc front electrode layer is high in height, and the rear end of the gate electrode three-arc front electrode layer is not connected with the front end of the gate electrode; the gate pole three-arc front electrode layer and the gate pole three-arc lower electrode layer are communicated with each other; the gate electrode back arc bottom layer and the printed silver paste layer on the gate electrode back arc bottom two layers form a gate electrode three-arc back electrode layer; the gate pole three-arc back electrode layer is in a concave arc shape, the front tail end of the gate pole three-arc back electrode layer faces the inner side face of the circular hole on the bottom of the gate pole back arc but is not contacted with the inner side face of the circular hole on the bottom of the gate pole back arc, the rear tail end of the gate pole three-arc back electrode layer faces the direction far away from the inner side face of the circular hole on the bottom of the gate pole back arc, the front tail end of the gate pole three-arc back electrode layer is not connected with the rear tail end of the gate pole three-arc front electrode layer, and the front tail end of the gate pole; the gate pole three-arc back electrode layer and the gate pole three-arc lower electrode layer are communicated with each other; the insulating slurry layer printed on the grey-black spacing layer forms three layers of gate electrode back arc bottom; the printed silver paste layers on the upper surfaces of the three layers of the gate electrode back arc bottom form a gate electrode bending connection silver electric layer; the front tail end of the gate electrode bending silver layer is connected with the rear tail end of the gate electrode three-arc rear electrode layer; the gate electrode bending silver layer and the gate electrode three-arc back electrode layer are communicated with each other; the gate electrode three-arc front electrode layer, the gate electrode three-arc back electrode layer and the gate electrode back arc bottom layer are formed by printed insulating slurry layers to form a gate electrode back arc bottom four layers; the carbon nanotube layer is manufactured on the bottom electrode of the cathode depressed groove.

Specifically, the fixed position of the single-ring depression groove-shaped curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate.

Specifically, the rear transparent hard glass plate is made of plane borosilicate glass or soda-lime glass.

The invention also provides a manufacturing process of the light-emitting backlight source with the single-ring hollow groove type curved surface cathode three-back arc layer gating structure, which comprises the following steps of:

1) manufacturing a rear transparent hard glass plate: scribing the plane glass to form a rear transparent hard glass plate;

2) manufacturing a gray-black spacing layer: printing insulating slurry on the rear transparent hard glass plate, and forming a grey-black spacing layer after baking and sintering processes;

3) and (3) manufacturing a cathode bending connection silver electric layer: printing silver paste on the grey black interlayer, and forming a cathode bending silver connection electric layer after baking and sintering processes;

4) preparing a cathode ring groove base layer: printing insulating slurry on the cathode bending silver layer, and forming a cathode ring groove substrate layer after baking and sintering processes;

5) and (3) manufacturing a cathode curve connecting line layer: printing silver paste in square holes of the cathode ring groove substrate layer, and forming a cathode curve connecting line layer after baking and sintering processes;

6) and (3) manufacturing a cathode curve connecting line two layer: printing silver paste on the upper surface of the cathode ring groove substrate layer, and forming a cathode curve connecting line two layer after baking and sintering processes;

7) manufacturing an upper outer layer of the cathode ring groove base: printing insulating slurry on the second layer of the cathode curve connecting line, and forming an upper outer layer of the cathode ring groove base after baking and sintering processes;

8) and (3) manufacturing three layers of cathode curve connecting lines: silver paste is printed in the square hole on the outer layer of the cathode ring groove base, and three layers of cathode curve connecting lines are formed after baking and sintering processes;

9) and (3) manufacturing a bottom electrode of the cathode depressed groove: printing silver paste on the upper surface of the outer layer on the cathode ring groove base, and forming a cathode depression groove bottom electrode after baking and sintering processes;

10) manufacturing an upper inner layer of the cathode ring groove base: printing insulating slurry on the second layer of the cathode curve connecting line, and forming an upper inner layer of the cathode ring groove base after baking and sintering processes;

11) manufacturing a gate electrode back arc bottom layer: printing insulating slurry on the grey-black spacing layer, and forming a gate electrode back arc bottom layer after baking and sintering processes;

12) manufacturing a gate electrode three-arc lower electrode layer: printing silver paste on the bottom layer of the gate back arc, and forming a gate three-arc lower electrode layer after baking and sintering processes;

13) manufacturing a gate electrode back arc bottom layer: printing insulating slurry on the gate pole three-arc lower electrode layer, and forming a gate pole back arc bottom two layer after baking and sintering processes;

14) manufacturing a gate electrode three-arc front electrode layer: printing silver paste on the first gate electrode back arc bottom layer and the second gate electrode back arc bottom layer, and forming a gate electrode three-arc front electrode layer after baking and sintering processes;

15) manufacturing a gate electrode three-arc back electrode layer: printing silver paste on the first gate electrode back arc bottom layer and the second gate electrode back arc bottom layer, and forming a gate electrode three-arc back electrode layer after baking and sintering processes;

16) manufacturing three layers of a gate pole back arc bottom: printing insulating slurry on the grey-black spacing layer, and forming a gate electrode back arc bottom three layers after baking and sintering processes;

17) manufacturing a gate electrode bending connection silver electric layer: silver paste is printed on the upper surfaces of the three layers of the bottom of the gate electrode back arc, and a gate electrode bending and silver connecting electric layer is formed after baking and sintering processes;

18) manufacturing four layers of a gate electrode back arc bottom: printing insulating slurry on the gate pole three-arc front electrode layer, the gate pole three-arc rear electrode layer and the gate pole back arc bottom two layers, and forming a gate pole back arc bottom four layer after baking and sintering processes;

19) cleaning a single-ring depression groove type curved surface cathode three-back arc layer gating structure: cleaning the surface of the gate control structure with the single-ring depressed groove type curved surface cathode and the three back arc layers to remove impurities and dust;

20) manufacturing a carbon nanotube layer: printing carbon nanotubes on the cathode depression bottom electrode to form a carbon nanotube layer;

21) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the electron emission characteristic;

22) manufacturing a front transparent hard glass plate: scribing the plane glass to form a front transparent hard glass plate;

23) preparing a conductive layer of the anode bottom film: etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form an anode bottom film power transmission layer;

24) and (3) manufacturing an anode bending connection silver electric layer: printing silver paste on the front transparent hard glass plate, and forming an anode bending silver electric layer after baking and sintering processes;

25) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode basement membrane conductive layer, and forming a thin light-emitting layer after a baking process;

26) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, assembling the front hard glass plate, the rear hard glass plate and the glass narrow frame strip together, and fixing by using a clamp;

27) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.

Specifically, in step 24, silver paste is printed on the non-display area of the front hard glass plate, and after the baking process, the maximum baking temperature is: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.

Specifically, in step 25, phosphor is printed on the anode bottom film conductive layer of the front transparent hard glass plate, and then the front transparent hard glass plate is placed in an oven for baking, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.

Specifically, in step 27, the packaging process includes placing the light-emitting backlight device in an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.

Has the advantages that: the invention has the following remarkable progress:

firstly, in the single-ring depressed groove type curved surface cathode three-back arc layer gate control structure, a cathode depressed groove bottom electrode is manufactured. The bottom electrode of the cathode concave groove is positioned on the upper surface of the upper outer layer of the cathode ring groove base and surrounds the upper inner layer of the cathode ring groove base. The cathode depression bottom electrode has a large surface area due to its unique shape; when the carbon nanotube layer is fabricated on the cathode recessed bottom electrode, the area of the carbon nanotube layer is effectively increased, which is beneficial to further increasing the cathode current of the light-emitting backlight. Meanwhile, the cathode depression groove bottom electrode is used for transferring cathode potential for the carbon nano tube layer, and the good conductivity of the cathode depression groove bottom electrode is beneficial to further reducing the power of the light-emitting backlight source.

Secondly, in the single-ring hollow groove type curved surface cathode three-back arc layer gate control structure, the carbon nanotube layer is manufactured on the cathode hollow groove bottom electrode. The cathode depression groove bottom electrode has a large cathode edge, and after the carbon nanotube layer is manufactured, the carbon nanotubes positioned at the edge position can fully utilize the phenomenon of 'edge electric field enhancement', can emit more cathode electrons, form larger cathode current of the light-emitting backlight source, can effectively improve the electron emission efficiency of the carbon nanotube layer, and simultaneously contribute to further improving the good light-emitting gray scale adjustability of the light-emitting backlight source.

Thirdly, in the single-ring hollow groove type curved surface cathode three-back arc layer gate control structure, a gate pole three-arc lower electrode layer, a gate pole three-arc front electrode layer and a gate pole three-arc rear electrode layer are manufactured. On one hand, the gate electrode three-arc lower electrode layer, the gate electrode three-arc front electrode layer and the gate electrode three-arc rear electrode layer have good conductivity, and applied gate voltage can be smoothly transmitted to the surface of the carbon nano tube layer. On the other hand, the gate electrode three-arc lower electrode layer, the gate electrode three-arc front electrode layer and the gate electrode rear electrode layer act together to form strong electric field intensity on the surface of the carbon nano tube layer to force the carbon nano tube layer to emit electrons, so that the regulation function of gate voltage on the electron emission of the carbon nano tube layer is embodied. Meanwhile, the manufacturing shapes of the gate electrode three-arc front electrode layer, the gate electrode three-arc rear electrode layer and the gate electrode three-arc lower electrode layer enable the effective distance between the gate electrode and the carbon nanotube layer to be larger, and the breakdown phenomenon between the gate electrode and the cathode is not easy to occur. This contributes to an increase in the production yield of the light-emitting backlight and an increase in the emission luminance of the light-emitting backlight.

In addition, no special manufacturing material is adopted in the light-emitting backlight source with the single hollow groove type curved surface cathode three-back arc layer gating structure, so that the manufacturing cost of the whole light-emitting backlight source is further reduced.

Drawings

FIG. 1 is a schematic longitudinal structural diagram of a single hollow-core groove type curved cathode three-back arc layer gating structure in an embodiment of the invention.

FIG. 2 is a schematic diagram of a horizontal structure of a single hollow-channel curved cathode three-back arc layer gating structure in an embodiment of the invention.

Fig. 3 is a schematic structural diagram of a light-emitting backlight source with a single hollow-ring groove type curved-surface cathode three-back arc-layer gating structure in the embodiment of the invention.

In the figure, a rear transparent hard glass plate 1, a gray-black interlayer 2, a cathode bending silver electric layer 3, a cathode ring groove substrate layer 4, a cathode curve connecting line layer 5, a cathode curve connecting line layer two 6, a cathode ring groove substrate upper outer layer 7, a cathode curve connecting line three layer 8, a cathode depression groove bottom electrode 9, a cathode ring groove substrate upper inner layer 10, a gate electrode back arc bottom layer 11, a gate electrode three arc lower electrode layer 12, a gate electrode back arc bottom layer two 13, a gate electrode three arc front electrode layer 14, a gate electrode three arc rear electrode layer 15, a gate electrode back arc bottom layer three layer 16, a gate electrode bending silver electric layer 17, a gate electrode back arc bottom four layer 18, a carbon nano tube layer 19, a front transparent hard glass plate 20, an anode bottom film electric transmission layer 21, an anode bending silver electric layer 22, a thin light-emitting layer 23, an air detraining agent 24 and a glass narrow frame.

Detailed Description

The present invention will be further described with reference to the drawings and examples, but the present invention is not limited to the examples.

The light-emitting backlight source of the single hollow groove type curved surface cathode three-back arc layer gating structure of the present embodiment is shown in fig. 1, fig. 2 and fig. 3, and includes a vacuum enclosure and an auxiliary element of a getter 24 located in the vacuum enclosure; the vacuum enclosure consists of a front hard glass plate 20, a rear hard glass plate 1 and a glass narrow frame strip 25; an anode basement membrane conductive layer 21, an anode bending silver layer 22 and a thin light-emitting layer 23 are arranged on the front transparent hard glass plate, the anode basement membrane conductive layer is connected with the anode bending silver layer, and the thin light-emitting layer is manufactured on the anode basement membrane conductive layer; and a single-ring hollow groove-shaped curved surface cathode three-back arc layer gating structure is arranged on the rear transparent hard glass plate.

The single-ring depressed groove type curved surface cathode three-back arc layer gate control structure comprises a rear transparent hard glass plate 1, a gray-black interval layer 2, a cathode curved silver electric layer 3, a cathode annular groove substrate layer 4, a cathode curved wire layer 5, a cathode curved wire layer two 6, a cathode annular groove base upper outer layer 7, a cathode curved wire layer three 8, a cathode depressed groove bottom electrode 9, a cathode annular groove base upper inner layer 10, a gate electrode back arc bottom layer one 11, a gate electrode three-arc lower electrode layer 12, a gate electrode back arc bottom two layer 13, a gate electrode three-arc front electrode layer 14, a gate electrode three-arc rear electrode layer 15, a gate electrode back arc bottom three layer 16, a gate electrode curved silver electric layer 17, a gate electrode back arc bottom four layer 18 and a carbon nanotube layer 19.

The substrate of the single-ring hollow groove type curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate 1; forming a grey-black spacing layer 2 through the printed insulating slurry layer on the hard glass plate 1; the printed silver paste layer on the grey and black spacing layer 2 forms a cathode bending silver electric layer 3; the printed insulating slurry layer on the cathode bending connection silver electric layer 3 forms a cathode ring groove base layer 4; the lower surface of the cathode ring groove substrate layer 4 is a circular plane and is positioned on the cathode bending silver layer 3, the upper surface of the cathode ring groove substrate layer 4 is a circular plane, the upper surface and the lower surface of the cathode ring groove substrate layer 4 are parallel to each other, the diameter of the upper surface and the diameter of the lower surface of the cathode ring groove substrate layer 4 are equal, and the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode ring groove substrate layer 4 are coincident with each other; a square hole is formed in the cathode ring groove substrate layer 4, and a cathode curve connecting line layer 5 is formed on a silver paste layer printed in the square hole; the cathode curved connecting line layer 5 and the cathode curved connecting silver layer 3 are communicated with each other; the printed silver paste layer on the upper surface of the cathode ring groove substrate layer 4 forms a cathode curve connecting line two layer 6; the cathode curve connecting line two-layer 6 is fully distributed on the upper surface of the cathode ring groove substrate layer 4, and the outer edge of the cathode curve connecting line two-layer 6 is flush with the outer edge of the upper surface of the cathode ring groove substrate layer 4; the second layer 6 of the cathode curve and the first layer 5 of the cathode curve are communicated with each other; the printed insulating slurry layer on the second layer 6 of the cathode curve forms a cathode ring groove base upper outer layer 7; the lower surface of the upper outer layer 7 of the cathode ring groove base is a hollow circular ring surface and is positioned on the second layer 6 of the cathode curve connecting line, the outer ring edge of the lower surface of the upper outer layer 7 of the cathode ring groove base is flush with the outer edge of the upper surface of the cathode ring groove substrate layer 4, the outer side surface of the upper outer layer 7 of the cathode ring groove base is a cylindrical surface, the inner side surface of the upper outer layer 7 of the cathode ring groove base is a cylindrical surface, the upper edge height of the outer side surface of the upper outer layer 7 of the cathode ring groove base is lower than the upper edge height of the inner side surface of the upper outer layer 7 of the cathode ring groove base, the upper surface of the upper outer layer 7 of the; a square hole is formed in the outer layer 7 on the cathode ring groove base, and a silver paste layer printed in the square hole forms a cathode curve connecting line three layer 8; the three layers 8 of the cathode curve connecting line and the two layers 6 of the cathode curve connecting line are communicated with each other; a cathode depressed groove bottom electrode 9 is formed on the printed silver paste layer on the upper surface of the outer layer 7 on the cathode ring groove base; the bottom electrode 9 of the cathode depressed groove and the three layers 8 of the cathode curve are communicated with each other; the printed insulating slurry layer on the second layer 6 of the cathode curve forms a cathode ring groove base upper inner layer 10; the lower surface of the inner layer 10 of the cathode ring groove base is a circular plane and is positioned on the second layer 6 of the cathode curve connecting line, the upper surface of the inner layer 10 of the cathode ring groove base is a circular plane, and the outer side surface of the inner layer 10 of the cathode ring groove base is an inclined circular table surface; the insulating slurry layer printed on the grey-black spacing layer 2 forms a gate electrode back arc bottom layer 11; the lower surface of a first layer 11 of the gate electrode back arc bottom is a plane and is positioned on a gray-black interval layer 2, a circular hole is formed in the first layer 11 of the gate electrode back arc bottom, the gray-black interval layer 2, a cathode bending silver electric layer 3, a cathode ring groove substrate layer 4, a first layer 5 of a cathode curve connecting line, a second layer 6 of the cathode curve connecting line, an upper outer layer 7 of the cathode ring groove substrate, a third layer 8 of the cathode curve connecting line, a bottom electrode 9 of a cathode depressed groove and an upper inner layer 10 of the cathode ring groove substrate are exposed in the circular hole, and the inner side surface of the circular hole of the first layer 11 of; a gate electrode three-arc lower electrode layer 12 is formed by the printed silver paste layer on the bottom layer 11 of the gate electrode back arc; the gate pole three-arc lower electrode layer 12 is in a convex arc shape and is positioned on the first layer 11 of the gate pole back arc bottom, the convex direction of the gate pole three-arc lower electrode layer 12 faces the direction far away from the inner side of the first layer 11 of the gate pole back arc bottom, the front tail end of the gate pole three-arc lower electrode layer 12 faces the direction of the inner side of the first layer 11 of the gate pole back arc bottom circular hole but is not contacted with the inner side of the first layer 11 of the gate pole back arc bottom circular hole, and the rear tail end of the gate pole three-arc lower electrode layer 12 faces the direction of; the printed insulating paste layer on the gate electrode three-arc lower electrode layer 12 forms a gate electrode back-arc bottom two layer 13; the gate electrode three-arc front electrode layer 14 is formed by the printed silver paste layers on the gate electrode back arc bottom layer 11 and the gate electrode back arc bottom layer 13; the gate three-arc front electrode layer 14 is in a concave arc shape, the front tail end of the gate three-arc front electrode layer 14 faces the inner side face of the first layer of 11 round holes on the back arc bottom of the gate and is flush with the inner side face of the first layer of 11 round holes on the back arc bottom of the gate, the rear tail end of the gate three-arc front electrode layer 14 faces the inner side face of the first layer of 11 round holes far away from the back arc bottom of the gate, the front tail end of the gate three-arc front electrode layer 14 is low in height and the rear tail end of the gate three-arc front electrode layer 14 is high, and the rear tail end; the gate electrode three-arc front electrode layer 14 and the gate electrode three-arc lower electrode layer 12 are communicated with each other; the gate electrode three-arc back electrode layer 15 is formed by the printed silver paste layers on the gate electrode back arc bottom layer 11 and the gate electrode back arc bottom layer 13; the gate pole three-arc back electrode layer 15 is in a concave arc shape, the front tail end of the gate pole three-arc back electrode layer 15 faces the inner side face of the hole in the first layer of the 11 round hole at the bottom of the gate pole back arc but is not contacted with the inner side face of the hole in the first layer of the 11 round hole at the bottom of the gate pole back arc, the rear tail end of the gate pole three-arc back electrode layer 15 faces the inner side face of the hole in the first layer of the 11 round hole away from the bottom of the gate pole back arc, the front tail end of the gate pole three-arc back electrode layer 15 is not connected with the rear tail end of the gate pole three-; the gate pole three-arc back electrode layer 15 and the gate pole three-arc lower electrode layer 12 are communicated with each other; the insulating paste layer printed on the grey and black spacing layer 2 forms a gate electrode back arc bottom three layer 16; the printed silver paste layers on the upper surfaces of the three layers 16 at the bottom of the gate electrode back arc form a gate electrode bending and connecting silver electric layer 17; the front tail end of the gate electrode bending silver layer 17 is connected with the rear tail end of the gate electrode three-arc rear electrode layer 15; the gate electrode bending silver layer 17 and the gate electrode three-arc back electrode layer 15 are communicated with each other; the gate electrode three-arc front electrode layer 14, the gate electrode three-arc back electrode layer 15 and the gate electrode back-arc bottom two layer 13 are printed with insulating slurry layers to form a gate electrode back-arc bottom four layer 18; the carbon nanotube layer 19 is formed on the bottom electrode 9 of the cathode depression.

The fixed position of the single-ring depression groove type curved surface cathode three-back arc layer gating structure is a rear transparent hard glass plate.

The rear transparent hard glass plate is made of plane soda-lime glass.

The manufacturing process of the light-emitting backlight source with the single-ring depressed groove type curved surface cathode three-back arc layer gating structure comprises the following steps of:

1) manufacturing a rear transparent hard glass plate: and (4) scribing the planar soda-lime glass to form the rear transparent hard glass plate.

2) Manufacturing a gray-black spacing layer: and printing insulating slurry on the rear transparent hard glass plate, and forming a grey-black spacing layer after baking and sintering processes.

3) And (3) manufacturing a cathode bending connection silver electric layer: and printing silver paste on the grey-black interlayer, and baking and sintering to form the cathode bending silver electric layer.

4) Preparing a cathode ring groove base layer: and printing insulating slurry on the cathode bending silver layer, and baking and sintering to form a cathode ring groove substrate layer.

5) And (3) manufacturing a cathode curve connecting line layer: silver paste is printed in the square holes of the cathode ring groove substrate layer, and a cathode curve connecting line layer is formed after baking and sintering processes.

6) And (3) manufacturing a cathode curve connecting line two layer: and printing silver paste on the upper surface of the cathode ring groove substrate layer, and forming a cathode curve connecting line two layer after baking and sintering processes.

7) Manufacturing an upper outer layer of the cathode ring groove base: and printing insulating slurry on the two layers of the cathode curve connecting line, and forming an upper outer layer of the cathode ring groove base after baking and sintering processes.

8) And (3) manufacturing three layers of cathode curve connecting lines: silver paste is printed in the square hole on the outer layer of the cathode ring groove base, and three layers of cathode curve connecting lines are formed after baking and sintering processes.

9) And (3) manufacturing a bottom electrode of the cathode depressed groove: and printing silver paste on the upper surface of the outer layer on the cathode ring groove base, and baking and sintering to form a cathode depression groove bottom electrode.

10) Manufacturing an upper inner layer of the cathode ring groove base: and printing insulating slurry on the two layers of the cathode curve connecting line, and forming an upper inner layer of the cathode ring groove base after baking and sintering processes.

11) Manufacturing a gate electrode back arc bottom layer: and printing insulating slurry on the grey-black spacing layer, and baking and sintering to form a gate electrode back arc bottom layer.

12) Manufacturing a gate electrode three-arc lower electrode layer: and printing silver paste on the bottom layer of the gate back arc, and baking and sintering to form the gate three-arc lower electrode layer.

13) Manufacturing a gate electrode back arc bottom layer: and printing insulating slurry on the gate pole three-arc lower electrode layer, and baking and sintering to form a gate pole back arc bottom two layer.

14) Manufacturing a gate electrode three-arc front electrode layer: silver paste is printed on the first gate electrode back arc layer and the second gate electrode back arc layer, and the gate electrode three-arc front electrode layer is formed after baking and sintering processes.

15) Manufacturing a gate electrode three-arc back electrode layer: and printing silver paste on the first gate electrode back arc layer and the second gate electrode back arc layer, and baking and sintering to form a gate electrode three-arc back electrode layer.

16) Manufacturing three layers of a gate pole back arc bottom: and printing insulating slurry on the grey-black spacing layer, and baking and sintering to form three layers of gate electrode back arc bottom.

17) Manufacturing a gate electrode bending connection silver electric layer: silver paste is printed on the upper surfaces of the three layers of the bottom of the gate electrode back arc, and the gate electrode bending silver-connected electric layer is formed after baking and sintering processes.

18) Manufacturing four layers of a gate electrode back arc bottom: and printing insulating slurry on the gate electrode three-arc front electrode layer, the gate electrode three-arc rear electrode layer and the gate electrode back arc bottom two layers, and baking and sintering to form the gate electrode back arc bottom four layers.

19) Cleaning a single-ring depression groove type curved surface cathode three-back arc layer gating structure: and cleaning the surface of the gate control structure with the single-ring depressed groove type curved surface cathode and the three back arc layers to remove impurities and dust.

20) Manufacturing a carbon nanotube layer: and printing the carbon nano tube on the cathode depression bottom electrode to form a carbon nano tube layer.

21) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.

22) Manufacturing a front transparent hard glass plate: and (4) scribing the planar soda-lime glass to form a front through hard glass plate.

23) Preparing a conductive layer of the anode bottom film: and etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form the anode basement film conductive layer.

24) And (3) manufacturing an anode bending connection silver electric layer: and printing silver paste on the front transparent hard glass plate, and baking and sintering to form the anode bending silver-connected electric layer.

25) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode bottom film and forming a thin luminous layer after a baking process.

26) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, the front hard glass plate, the rear hard glass plate and the glass narrow frame strip are assembled together and fixed by a clamp.

27) Packaging the light-emitting backlight source device: packaging the assembled light-emitting backlight source device, and baking the light-emitting backlight source device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.

The experimental verification data of the light-emitting backlight source with the single-ring depressed-groove type curved-surface cathode three-back arc layer gating structure, which is prepared in the embodiment, is provided, and the light-emitting gray scale adjustability is good.