阅读说明：本技术 一种晶圆检测设备及晶圆检测方法 (Wafer detection equipment and wafer detection method ) 是由 詹冬武 潘玉妹 于 2019-10-30 设计创作，主要内容包括：本发明提供晶圆检测方法及晶圆检测设备。检测设备包括第一扫描探头、第二扫描探头、图像生成单元以及图像处理单元,通过第一扫描探头对晶圆进行超声预扫描,探测晶圆的芯粒信息；第二超声扫描探头以芯粒信息为定位坐标对晶圆进行超声扫描,探测包括晶粒信息的晶圆的缺陷信息；图像处理单元与第一超声扫描探头连接,用于接收芯粒信息并通过芯粒信息对超声扫描进行定位。图像生产单元与第二超声扫描探头连接,接收缺陷信息并根据缺陷信息生成缺陷图。该缺陷图包括芯粒信息,使得后续的缺陷分析结果中包含晶圆的芯粒信息,检测结果达到芯粒级别,实现精细化量产检测。(The invention provides a wafer detection method and wafer detection equipment. The detection equipment comprises a first scanning probe, a second scanning probe, an image generation unit and an image processing unit, and is used for carrying out ultrasonic pre-scanning on the wafer through the first scanning probe and detecting core particle information of the wafer; the second ultrasonic scanning probe performs ultrasonic scanning on the wafer by taking the core grain information as a positioning coordinate to detect the defect information of the wafer comprising the grain information; the image processing unit is connected with the first ultrasonic scanning probe and used for receiving the core particle information and positioning the ultrasonic scanning through the core particle information. The image production unit is connected with the second ultrasonic scanning probe, receives the defect information and generates a defect map according to the defect information. The defect map comprises core grain information, so that subsequent defect analysis results comprise the core grain information of the wafer, the detection results reach the core grain level, and fine mass production detection is realized.)

1. A wafer inspection apparatus, comprising: a first ultrasonic scanning probe, a second ultrasonic scanning probe, an image generating unit and an image processing unit,

the first ultrasonic scanning probe is used for carrying out ultrasonic pre-scanning on the wafer by taking the notch of the wafer as a positioning coordinate so as to detect core particle information of the wafer;

the second ultrasonic scanning probe is used for carrying out ultrasonic scanning on the wafer by taking the core grain information as a positioning coordinate so as to detect the defect information of the wafer, wherein the defect information comprises the grain information;

the image processing unit is connected with the first ultrasonic scanning probe and used for receiving the core particle information and positioning the ultrasonic scanning through the core particle information;

the image production unit is connected with the second ultrasonic scanning probe and used for receiving the defect information and generating a defect map of the wafer according to the defect information.

2. The wafer inspection apparatus of claim 1, wherein a resolution of the first ultrasonic scanning probe is lower than a resolution of the second ultrasonic scanning probe.

3. The wafer inspection apparatus of claim 2, wherein the first ultrasonic scanning probe has a resolution of 500 μm by 500 μm to 250 μm by 250 μm, and the second ultrasonic scanning probe has a resolution of 50 μm by 50 μm to 10 μm by 10 μm.

4. The wafer inspection apparatus of claim 1, wherein the wafer core information includes structure, size, and relative coordinates on the wafer of the core.

5. The wafer inspection apparatus of claim 1, wherein the wafer comprises a bonded wafer comprising a plurality of wafers bonded together.

6. A wafer detection method is characterized by comprising the following steps:

carrying out ultrasonic pre-scanning on a wafer to obtain core particle information of the wafer;

carrying out ultrasonic scanning on the wafer by taking the core grain information as a positioning coordinate to obtain defect information of the bonded wafer, wherein the defect information comprises the core grain information;

and generating a defect map of the wafer according to the defect information.

7. The wafer inspection method of claim 6, wherein ultrasonically pre-scanning the wafer comprises: and carrying out ultrasonic pre-scanning on the wafer by taking the wafer notch of the wafer as a positioning coordinate.

8. The method of claim 6, wherein the wafer is subjected to the ultrasonic pre-scan and the ultrasonic scan by using a first ultrasonic scanning probe with a first resolution and a second ultrasonic scanning probe with a second resolution, respectively, wherein the first resolution is lower than the second resolution.

9. The method as claimed in claim 8, wherein the first resolution is 500 μm to 250 μm, and the second resolution is 50 μm to 10 μm.

10. The wafer inspection method of claim 6, wherein the performing an ultrasonic pre-scan on the wafer to obtain core grain information of the wafer comprises:

probing the structure of the core grain of the wafer;

detecting the size of the core grains of the wafer; and

and detecting the relative coordinates of the core particles of the wafer on the wafer.

11. The wafer inspection method of claim 6, wherein the wafer comprises a bonded wafer comprising a plurality of wafers bonded together.

12. The wafer inspection method of claim 11, further comprising:

positioning the defect according to the relative coordinates of the core particles on the wafer; and/or

Analyzing the formation cause of the defect according to the structure of the core particle; and/or

And analyzing the size of the defect in the wafer according to the size of the core grain.

Technical Field

The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to wafer detection equipment and a wafer detection method.

Background

Ultrasonic inspection equipment is an equipment for inspecting process defects by using ultrasonic technology, and is increasingly widely applied to the manufacturing process of semiconductor integrated circuits due to the high penetration characteristic of ultrasonic waves, for example, for inspecting Bubble defects (bubbles) after bonding process.

However, when, for example, bubble defect detection is performed by using an ultrasonic detection apparatus, since visible light cannot penetrate through the thickness of one wafer, an engineer cannot see the structure of a core particle (Shot or Die) on the wafer, so that the Shot or Die of the wafer cannot be drawn. The final detection result does not contain Shot or Die information, and an engineer is difficult to perform more accurate analysis such as accurate positioning or further structural analysis on the detected defect. Therefore, the ultrasonic detection equipment in the prior art cannot meet increasingly refined wafer manufacturing processes, and further cannot realize mass production detection.

Therefore, it is desirable to provide a defect detecting apparatus and method, which solve the above problems.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer inspection apparatus and a wafer inspection method, which are used to solve the technical problem that the defects cannot be accurately located or the structure cannot be analyzed more accurately in the prior art.

To achieve the above and other related objects, the present invention provides a wafer inspection apparatus, comprising: a first ultrasonic scanning probe, a second ultrasonic scanning probe, an image generating unit and an image processing unit,

the first ultrasonic scanning probe is used for carrying out ultrasonic pre-scanning on the wafer by taking the notch of the wafer as a positioning coordinate so as to detect core particle information of the wafer;

the second ultrasonic scanning probe is used for carrying out ultrasonic scanning on the wafer by taking the core grain information as a positioning coordinate so as to detect the defect information of the wafer, wherein the defect information comprises the grain information;

the image processing unit is connected with the first ultrasonic scanning probe and used for receiving the core particle information and positioning the ultrasonic scanning through the core particle information;

the image production unit is connected with the second ultrasonic scanning probe and used for receiving the defect information and generating a defect map of the wafer according to the defect information.

Optionally, the resolution of the first ultrasound scanning probe is lower than the resolution of the second ultrasound scanning probe.

Optionally, the resolution of the first ultrasound scanning probe is between 500 μm and 250 μm, and the resolution of the second ultrasound scanning probe is between 50 μm and 10 μm.

Optionally, the core grain information of the wafer comprises a structure, a size and relative coordinates on the wafer of the core grain.

Optionally, the wafer comprises a bonded wafer comprising a plurality of wafers bonded together.

The invention also provides a wafer detection method, which comprises the following steps:

carrying out ultrasonic pre-scanning on a wafer to obtain core particle information of the wafer;

carrying out ultrasonic scanning on the wafer by taking the core grain information as a positioning coordinate to obtain defect information of the bonded wafer, wherein the defect information comprises the core grain information;

generating a defect map of the wafer according to the defect information;

and positioning and analyzing the defects in the defect map according to the core grain map and the defect map.

Optionally, the performing an ultrasonic pre-scan on the wafer comprises: and carrying out ultrasonic pre-scanning on the wafer by taking the wafer notch of the wafer as a positioning coordinate.

Optionally, a first ultrasonic scanning probe with a first resolution and a second ultrasonic scanning probe with a second resolution are respectively adopted to perform ultrasonic pre-scanning and ultrasonic scanning on the wafer, wherein the first resolution is lower than the second resolution.

Optionally, the first resolution is between 500 μm and 250 μm, and the second resolution is between 50 μm and 10 μm.

Optionally, performing ultrasonic pre-scanning on the wafer, and acquiring core grain information of the wafer includes:

probing the structure of the core grain of the wafer;

detecting the size of the core grains of the wafer; and

and detecting the relative coordinates of the core particles of the wafer on the bonded wafer.

Optionally, the wafer comprises a bonded wafer comprising a plurality of wafers bonded together.

Optionally, the wafer inspection method further includes:

positioning the defect according to the relative coordinates of the core particles on the wafer; and/or

Analyzing the formation cause of the defect according to the structure of the core particle; and/or

And analyzing the size of the defect in the wafer according to the size of the core grain.

As described above, the wafer inspection apparatus and the wafer inspection method provided by the present invention have the following advantageous technical effects:

according to the wafer detection equipment and the wafer detection method, the wafer is subjected to ultrasonic pre-scanning through the first ultrasonic scanning probe, core particle information is obtained, and the core particle information is used as a positioning coordinate of ultrasonic scanning, so that accurate positioning of the ultrasonic scanning is realized; and after the second ultrasonic scanning probe is used for carrying out precise ultrasonic scanning on the wafer, acquiring defect information comprising core grain information, and forming a defect map of the wafer according to the defect information. Therefore, the defect graph contains the core grain information of the wafer, the specific core grain position of the defect in the wafer can be accurately positioned according to the core grain information, the defect analysis reaches the core grain level, the accurate positioning analysis of the defect is facilitated, the formation reason of the defect is analyzed in an assisting mode, the manufacturing process of the integrated circuit is adjusted in time, and the yield of wafer products is improved.

Drawings

Fig. 1 is a schematic structural diagram of a wafer inspection apparatus according to an embodiment of the present invention.

Fig. 2 is a flowchart illustrating a wafer inspection method according to a second embodiment of the present invention.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.