阅读说明：本技术 晶圆键合设备以及使用其的晶圆键合系统 (Wafer bonding equipment and wafer bonding system using same ) 是由 金俊亨 金圣协 金兑泳 于 2019-03-08 设计创作，主要内容包括：提供了晶圆键合设备以及使用其的晶圆键合系统,所述晶圆键合设备包括：第一键合卡盘,将第一晶圆固定在第一键合卡盘的第一表面上；第二键合卡盘,将第二晶圆固定在第二键合卡盘的面对第一表面的第二表面上；键合起始构件,位于第一键合卡盘的中心处以将第一晶圆推向第二表面；以及膜构件,包括从第二表面的中心部分朝向第一表面突出的突起以及在围绕中心部分的外部区域上限定突起的平面部分。(Provided are a wafer bonding apparatus and a wafer bonding system using the same, the wafer bonding apparatus including: a first bonding chuck to secure a first wafer on a first surface of the first bonding chuck; a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface; a bonding initiation member located at a center of the first bonding chuck to urge the first wafer toward the second surface; and a film member including a protrusion protruding from a central portion of the second surface toward the first surface and a planar portion defining the protrusion on an outer area surrounding the central portion.)

1. A wafer bonding apparatus, the wafer bonding apparatus comprising:

a first bond chuck holding a first wafer disposed on a first surface of the first bond chuck;

a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface;

a bonding initiation member located at a center of the first bonding chuck to urge the first wafer toward the second surface; and

a film member having a protrusion protruding from a central portion of the second surface toward the first surface and a planar portion defining the protrusion in an outer region surrounding the central portion of the second surface.

2. The wafer bonding apparatus of claim 1, wherein the protrusion of the film member has a thickness smaller than a thickness of the planar portion, and the film member comprises a flexible material.

3. The wafer bonding apparatus of claim 2, further comprising an air pump that supplies pneumatic pressure to a lower surface of the membrane member, the lower surface of the membrane member facing an upper surface of the membrane member that contacts the second wafer, wherein the protrusion of the membrane member is formed by the pneumatic pressure as a hemispherical surface having a predetermined radius in a protruding direction.

4. The wafer bonding apparatus of claim 3, wherein the predetermined radius of the hemispherical surface is changed according to a change in pneumatic pressure.

5. The wafer bonding apparatus of claim 1, wherein the protrusion of the film member has a thickness greater than a thickness of the planar portion, and the film member comprises a rigid material.

6. The wafer bonding apparatus of claim 5, wherein the protrusion of the film member is provided as a truncated cone of a stepped type.

7. The wafer bonding apparatus of claim 1, wherein the film member is replaceable with a film member of a different shape according to the kind of the first wafer and the second wafer.

8. The wafer bonding apparatus of claim 1, wherein the bonding start member pushes the center of the first wafer in a direction toward the second wafer to obtain a bonding propagation distance in the first wafer, and the film member pushes the second wafer to cause the second wafer to protrude from a central portion thereof toward the first wafer and to have a flat outer region.

9. The wafer bonding apparatus of claim 8, further comprising a sensor spaced apart from the first and second bond chucks to measure a bond propagation distance.

10. The wafer bonding apparatus of claim 9, wherein the sensor comprises a plurality of sensors, and at least three sensors are arranged to be separated from each other by an azimuth angle of 45 ° from positions corresponding to alignment features in the first wafer.

11. The wafer bonding apparatus of claim 1, wherein:

an aperture stop is used as the second surface of the second bond chuck, an

The protrusion protrudes from the opening portion of the aperture stop in a direction toward the first surface and the planar portion is located in the closing portion of the aperture stop.

12. The wafer bonding apparatus of claim 11, wherein a thickness of the film member is constant throughout an entire surface of the film member, and the film member includes a flexible material.

13. The wafer bonding apparatus of claim 12, further comprising an air pump that supplies pneumatic pressure to a lower surface of the film member, the lower surface of the film member facing an upper surface of the film member that contacts the second wafer, the protrusion of the film member being formed by the pneumatic pressure as a hemispherical surface having a predetermined radius in a protruding direction.

14. The wafer bonding apparatus of claim 13, wherein the predetermined radius of the hemispherical surface is changed according to a change in pneumatic pressure and/or an aperture ratio of the aperture stop.

15. The wafer bonding apparatus of claim 11, wherein:

the bonding initiation member pushes the center of the first wafer in a direction toward the second wafer to obtain a bond propagation distance in the first wafer,

the membrane member and the aperture stop urge the second wafer so that the second wafer has a central portion protruding toward the first wafer and has a flat outer region.

16. A wafer bonding system, the wafer bonding system comprising:

a first bond chuck holding a first wafer disposed on a first surface of the first bond chuck;

a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface;

a bonding initiation member located at a center of the first bonding chuck to urge the first wafer in a direction toward the second surface;

a film member including a protrusion protruding from a central portion of the second surface toward the first surface and a planar portion defining the protrusion on an outer area surrounding the central portion of the second surface;

a sensor spaced apart from the first and second bond chucks to measure a bond propagation distance of the first wafer; and

and a controller controlling a shape of the film member according to the bonding propagation distance.

17. The wafer bonding system of claim 16, wherein the sensor comprises an infrared sensor, an ultrasonic sensor, or a laser sensor, and the sensor measures the bond propagation distance by sensing at least one of a pressure change, an electrical change, and a distance change based on the isolation of the first wafer from the first surface.

18. The wafer bonding system of claim 17, wherein the sensors include at least three sensors spaced apart from each other at an azimuthal angle of 45 ° from locations corresponding to alignment features in the first wafer.

19. The wafer bonding system of claim 16, further comprising an air pump supplying pneumatic pressure to a lower surface of the film member via the second bonding chuck, the lower surface of the film member facing an upper surface of the film member contacting the second wafer, and the protrusion of the film member being formed by the pneumatic pressure as a hemispherical surface having a predetermined radius in a protruding direction.

20. The wafer bonding system of claim 19, wherein a pneumatic pressure output by the air pump is adjusted by the controller, and the predetermined radius of the hemispherical surface is changed according to a change in the pneumatic pressure.

21. The wafer bonding system of claim 16, wherein the second surface of the second bond chuck includes an aperture stop, and the membrane member includes a protrusion protruding from an opening portion of the aperture stop in a direction toward the first surface and a planar portion located in a closing portion of the aperture stop.

22. The wafer bonding system of claim 21, further comprising an air pump supplying pneumatic pressure to a lower surface of the film member via the second bonding chuck, the lower surface of the film member facing an upper surface of the film member contacting the second wafer, and the protrusion of the film member being formed by the pneumatic pressure as a hemispherical surface having a predetermined radius in a protruding direction.

23. The wafer bonding system of claim 22, wherein a change in the pneumatic pressure and/or the aperture ratio of the aperture stop is adjusted by the controller, and the predetermined radius of the hemispherical surface is changed in accordance with the change in the pneumatic pressure and/or the aperture ratio of the aperture stop.

24. The wafer bonding system of claim 16, further comprising a data processor that receives first data regarding a bond propagation distance measured by the sensor based on a type of the first wafer.

25. The wafer bonding system of claim 24, wherein the data processor generates second data for feedback regarding the shape of the adjustment film member based on the first data.

Technical Field

Background

In a process of manufacturing a semiconductor device, a wafer bonding process, i.e., bonding two wafers, may be performed. Such wafer bonding processes may be used to improve the density of semiconductor chips in a semiconductor device. For example, the semiconductor module having a structure in which semiconductor chips are stacked enables a reduction in the length of wiring between the semiconductor chips, so that signals can be processed at high speed while also increasing the density of the semiconductor chips. When manufacturing a semiconductor module having a stacked semiconductor chip structure, dicing a wafer in units of stacked semiconductor chips after performing a bonding process in units of a wafer may have higher productivity than a bonding operation of bonding separate plural semiconductor chips. The wafer bonding process may be performed in a wafer-to-wafer bonding method (i.e., two wafers are directly bonded to each other without intervening additional media). The wafer-to-wafer bonding method may be generally performed by using a wafer bonding apparatus including a bonding chuck on which a wafer is disposed and fixed and an element for bringing the wafer into contact.

Disclosure of Invention

According to an aspect, there is provided a wafer bonding apparatus including: a first bonding chuck to secure a first wafer on a first surface of the first bonding chuck; a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface; a bonding initiation member located at a center of the first bonding chuck to urge the first wafer toward the second surface; and a film member including a protrusion protruding from a central portion of the second surface toward the first surface and a planar portion defining the protrusion on an outer area surrounding the central portion of the second surface.

According to an aspect, there is provided a wafer bonding apparatus including: a first bonding chuck to secure a first wafer on a first surface of the first bonding chuck; a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface; a bonding initiation member located at a center of the first bonding chuck to urge the first wafer toward the second surface; an aperture stop for a second surface of the second bond chuck; and a film member including a protrusion protruding from the opening portion of the aperture stop in a direction toward the first surface and a planar portion located in the closing portion of the aperture stop.

According to an aspect, there is provided a wafer bonding system comprising: a first bond chuck holding a first wafer disposed on a first surface of the first bond chuck; a second bonding chuck fixing a second wafer on a second surface of the second bonding chuck facing the first surface; a bonding initiation member located at a center of the first bonding chuck to urge the first wafer toward the second surface; a film member including a protrusion protruding from a central portion of the second surface toward the first surface and a planar portion defining the protrusion on an outer area surrounding the central portion of the second surface; a sensor spaced apart from the first and second bond chucks to measure a bond propagation distance of the first wafer; and a controller controlling a shape of the film member according to the bonding propagation distance.

Drawings

Features will become apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the attached drawings, in which:

fig. 1 to 4 show diagrams of a wafer bonding apparatus according to an embodiment;

fig. 5 to 7 show cross-sectional views of stages in a process of performing a wafer bonding process in a wafer bonding apparatus according to an embodiment;

fig. 8 and 9 show diagrams of a wafer bonding apparatus according to an embodiment;

fig. 10 to 12C show diagrams of a wafer bonding apparatus according to an embodiment;

fig. 13A to 13C show plan views showing relative deformation with respect to a first wafer and a second wafer in a wafer bonding apparatus without deformation compensation;

fig. 14 shows a graph showing relative deformation of a first wafer and a second wafer in a wafer bonding apparatus according to an embodiment; and

fig. 15 shows a flow diagram of a method of wafer bonding according to an embodiment.

Embodiments relate to a wafer bonding apparatus and a wafer bonding system using the same, and more particularly, to a wafer bonding apparatus capable of improving bonding accuracy in a wafer-to-wafer bonding process and a wafer bonding system using the same.