阅读说明：本技术 一种隔热的半导体热电/电热转换元件 (Heat-insulating semiconductor thermoelectric/electrothermal conversion element ) 是由 孙志宏 刘宗锴 赵昌健 赵伯诚 于 2019-09-19 设计创作，主要内容包括：本发明提供了一种隔热的半导体热电/电热转换元件,包括由上下两片端绝缘体和封装组成的空间,两片端绝缘体的内壁上均紧贴有多个外电极,其特征在于：位于所述的上下两片端绝缘体上的任意相邻两个外电极之间连接有一对上下设置的N型半导体或P型半导体,每对N型半导体或P型半导体之间均设有一对内电极,每对内电极之间通过内导线连接,N型半导体和P型半导体之间间隔设置,所有的N型半导体和P型半导体通过外电极形成串联结构。本发明的空间阻断了热量从温度较高的端绝缘体往温度较低的端绝缘体的传递路径,提高了电热转换的效率。(The invention provides a heat-insulating semiconductor thermoelectric/electrothermal conversion element, which comprises a space consisting of an upper insulator and a lower insulator and a package, wherein a plurality of external electrodes are tightly attached to the inner walls of the two insulators, and the heat-insulating semiconductor thermoelectric/electrothermal conversion element is characterized in that: a pair of N-type semiconductors or P-type semiconductors which are arranged up and down is connected between any two adjacent outer electrodes on the upper and lower piece of end insulators, a pair of inner electrodes are arranged between each pair of N-type semiconductors or P-type semiconductors, each pair of inner electrodes are connected through inner leads, the N-type semiconductors and the P-type semiconductors are arranged at intervals, and all the N-type semiconductors and the P-type semiconductors form a series structure through the outer electrodes. The space of the invention blocks the transfer path of heat from the end insulator with higher temperature to the end insulator with lower temperature, thus improving the efficiency of electric-heat conversion.)

1. The utility model provides a thermal-insulated semiconductor thermoelectric/electric heat conversion element, includes space (8) of constituteing by upper and lower two-piece end insulator (1) and encapsulation (2), all hugs closely on the inner wall of two-piece end insulator (1) has a plurality of outer electrodes (3), its characterized in that: a pair of N-type semiconductors (7) or P-type semiconductors (6) arranged up and down is connected between any two adjacent outer electrodes (3) on the upper and lower piece of end insulators (1), a pair of inner electrodes (4) are arranged between each pair of N-type semiconductors (7) or P-type semiconductors (6), each pair of inner electrodes (4) are connected through an inner lead (5), the N-type semiconductors (7) and the P-type semiconductors (6) are arranged at intervals, and all the N-type semiconductors (7) and the P-type semiconductors (6) form a series structure through the outer electrodes (3).

2. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1, wherein: each pair of N-type semiconductors (7) consists of two N-type semiconductors (7) which are arranged in an up-down alignment manner; each pair of the P-type semiconductors (6) consists of two P-type semiconductors (6) which are arranged in an up-and-down alignment mode.

3. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1 or 2, wherein: the space (8) is in a vacuum state.

4. An insulated semiconductor thermoelectric/electrothermal conversion element according to claim 1 or 2, wherein: every be to be equipped with thermal-insulated insulating layer (9) between inner electrode (4), thermal-insulated insulating layer (9) inside is equipped with a plurality of via holes (10), is equipped with in every via hole (10) and is used for connecting two inner electrode (4) about being equipped with inner lead (5).

Technical Field

The invention relates to a heat-insulating semiconductor thermoelectric/electrothermal conversion element, which is a semiconductor thermoelectric/electrothermal conversion element based on the Peltier effect and the Seebeck effect and belongs to the technical field of semiconductor materials and electronic components.

Background

The peltier effect means that when a current passes through a loop formed by conductors made of different materials, heat absorption and heat release phenomena occur at the joint of the conductors made of different materials along with the difference of current directions except for the generation of irreversible joule heat. This was discovered by j.c.a. peltier in 1834. In short, under the action of an external electric field, electrons generate directional motion, and a part of internal energy is brought to the other end of the electric field. Fig. 1 shows a semiconductor cooling or heating apparatus using P-type and N-type semiconductors as main materials, which uses this principle.

The seebeck effect is the inverse of the peltier effect. The seebeck effect, also called the first thermoelectric effect, refers to the thermoelectric phenomenon in which the voltage difference between two substances is caused by the temperature difference between two different electrical conductors or semiconductors. This was discovered in 1821 by thomas john seebeck. In the case of a semiconductor material, in short, carriers in the semiconductor move from a hot end to a cold end under a temperature gradient until reaching dynamic equilibrium with an internal electric field, and a stable thermoelectric electromotive force is formed at two ends of the semiconductor. Fig. 2 shows a semiconductor thermoelectric power generation device using this principle and made of P-type and N-type semiconductors as main materials.

At present, the efficiency of a semiconductor refrigerating or heating device or a thermoelectric power generation device which is made of P-type and N-type semiconductors as main materials is not high. One of the main reasons is the conductive loss of heat. In the semiconductor cooling or heating apparatus using P-type and N-type semiconductors as main materials shown in fig. 1, two large arrows indicate effective heat transfer. After the power is switched on, the temperature of the insulator 1 at the lower end serving as the hot end is higher than that of the insulator 1 at the upper end serving as the cold end, a part of heat is reversely transferred from the hot end to the cold end, or a part of cold is reversely transferred from the cold end to the hot end, so that the temperature difference generated by the Peltier effect is wasted, and the efficiency of the semiconductor refrigerating or heating device is reduced. The semiconductor thermoelectric power generation device shown in fig. 2, which is made of P-type and N-type semiconductors as main materials, has the same problem. The two large arrows indicate the process of the temperature difference generated by the effective heat flow. The temperature of the lower end insulator 1 is high by absorbing the heat of the surrounding heat source; the heat is radiated to the surrounding cold source, the temperature of the insulator 1 at the upper end is low, and the temperature difference between the insulator 1 at the upper end and the insulator at the lower end forms stable electromotive force in the semiconductor thermoelectric power generation device due to the seebeck effect. But simultaneously some heat then directly has passed through semiconductor thermoelectric generation device from the heat source direct transfer to the cold source, and this has not only wasted the heat, has reduced the difference in temperature of hot junction and cold junction moreover, leads to the low of thermoelectric force reduction and semiconductor thermoelectric generation device's efficiency.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: how to reduce the heat conduction inside the semiconductor thermoelectric/electric heating conversion element and improve the efficiency of a semiconductor cooling/heating device or a thermoelectric power generation device which is made of P-type and N-type semiconductors as main materials.

In order to solve the technical problem, the technical scheme of the invention provides a heat-insulating semiconductor thermoelectric/electric-heat conversion element, which comprises a space formed by an upper insulator and a lower insulator and a package, wherein a plurality of external electrodes are tightly attached to the inner walls of the two insulators, and the heat-insulating semiconductor thermoelectric/electric-heat conversion element is characterized in that: a pair of N-type semiconductors or P-type semiconductors which are arranged up and down is connected between any two adjacent outer electrodes on the upper and lower piece of end insulators, a pair of inner electrodes are arranged between each pair of N-type semiconductors or P-type semiconductors, each pair of inner electrodes are connected through inner leads, the N-type semiconductors and the P-type semiconductors are arranged at intervals, and all the N-type semiconductors and the P-type semiconductors form a series structure through the outer electrodes.

Preferably, each pair of the N-type semiconductors consists of two N-type semiconductors which are arranged in an up-and-down alignment manner; each pair of the P-type semiconductors consists of two P-type semiconductors which are arranged in an up-and-down alignment mode.

Preferably, the space is in a vacuum state.

Preferably, a heat insulation layer is arranged between each pair of the inner electrodes, a plurality of through holes are formed in the heat insulation layer, and an inner lead used for connecting the upper inner electrode and the lower inner electrode is arranged in each through hole.

The invention reduces the communication area of the narrowest part between the upper and lower insulators to the utmost extent, reduces the heat conduction between the upper and lower insulators with temperature difference through solid materials to the utmost extent, and improves the efficiency of the semiconductor refrigerating/heating device or the temperature difference generating device which is made of P-type and N-type semiconductors as main materials. The invention also uses the vacuum space to block the heat conduction between the upper and lower insulators with temperature difference through gas, further improves the efficiency of the semiconductor refrigerating/heating device or the temperature difference generating device which is made of P-type and N-type semiconductors as main materials. Meanwhile, in order to facilitate the manufacture of the semiconductor thermoelectric/electrothermal conversion element, the invention also provides a technology for connecting and supporting each pair of the N-type semiconductor and the P-type semiconductor which are arranged up and down by using a heat insulation insulating layer with an inner lead.

The invention has the advantages that: because between the external electrodes, an original complete P-type semiconductor is divided into two sections, the middle of the P-type semiconductor is connected by the internal electrode and the internal wire, and an original complete N-type semiconductor is also divided into two sections, the middle of the N-type semiconductor is connected by the internal electrode and the internal wire. The inner lead is thin and has a certain length, the thermal resistance is large, the evacuated space does not transfer heat at all, and the semiconductor thermoelectric/electric heating conversion element made by the method has no heat conduction. Therefore, the semiconductor thermoelectric/electrothermal interconversion element disclosed by the invention is heat-insulated, and the thermoelectric/electrothermal interconversion efficiency is high. Meanwhile, the invention has the advantages that: the heat insulation layer in which the inner lead is prefabricated is used, and each pair of vertically aligned P-type semiconductors and each pair of vertically aligned N-type semiconductors are respectively connected into a whole, so that the heat insulation effect of the semiconductor thermoelectric/electric-heat interconversion element disclosed by the invention is kept, and the manufacturing of the semiconductor thermoelectric/electric-heat interconversion element is facilitated.

Drawings

Fig. 1 is a schematic view of a semiconductor cooling/heating apparatus based on the peltier effect;

FIG. 2 is a schematic diagram of a semiconductor thermoelectric power generation device based on the Seebeck effect;

FIG. 3 is a schematic view of an insulated semiconductor thermoelectric/electrothermal conversion element of the present invention;

FIG. 4 is a schematic view of an insulated semiconductor thermoelectric/electrothermal conversion element of the present invention (with an insulating layer in between);

fig. 5 is a schematic view of a semiconductor cooling/heating apparatus fabricated using an insulated semiconductor thermoelectric/electrothermal conversion element of the present invention;

fig. 6 is a schematic diagram of a semiconductor thermoelectric generation device fabricated with an insulated semiconductor thermoelectric/electrothermal conversion element of the present invention.

Detailed Description

In order to make the invention more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.