Hydrogen sulfide gas sensing material, sensor, preparation method and use method

文档序号:1655313 发布日期:2019-12-27 浏览:49次 中文

阅读说明:本技术 一种硫化氢气体传感材料、传感器及制备方法与使用方法 (Hydrogen sulfide gas sensing material, sensor, preparation method and use method ) 是由 孟钢 童彬 邓赞红 方晓东 王时茂 陶汝华 于 2019-09-19 设计创作,主要内容包括:本发明涉及一种硫化氢气体传感材料、传感器以及制备方法与使用方法。该传感材料包括p型铜铁矿CuAlO<Sub>2</Sub>颗粒和/或CuCrO<Sub>2</Sub>颗粒,所述CuAlO<Sub>2</Sub>颗粒、CuCrO<Sub>2</Sub>颗粒的粒径为10nm~20μm。该传感器包括p型铜铁矿敏感层以及平面型陶瓷基板,平面型陶瓷基板表面沉积有叉指测试电极以及对p型铜铁矿敏感层进行加热的加热电极,所述p型铜铁矿敏感层涂覆在叉指测试电极上并与平面型陶瓷基板表面贴合,p型铜铁矿敏感层由CuAlO<Sub>2</Sub>颗粒和/或CuCrO<Sub>2</Sub>颗粒构成。本发明所述传感器,对H<Sub>2</Sub>S分子具有很高的灵敏度、选择性高、且响应快,p型铜铁矿敏感层不需复杂的形貌控制、缺陷调控或特殊的异质结构设计,制备方法简单。(The invention relates to a hydrogen sulfide gas sensing material, a sensor, a preparation method and a use method. The sensing material comprises p-type delafossite CuAlO 2 Particles and/or CuCrO 2 Particles of the CuAlO 2 Granules, CuCrO 2 The particle size of the particles is 10 nm-20 μm. The sensor comprises a p-type delafossite sensitive layer and a planar ceramic substrate, wherein an interdigital test electrode and a heating electrode for heating the p-type delafossite sensitive layer are deposited on the surface of the planar ceramic substrate, the p-type delafossite sensitive layer is coated on the interdigital test electrode and attached to the surface of the planar ceramic substrate, and the p-type delafossite sensitive layer is formed by CuAlO 2 Particles and/or CuCrO 2 And (3) particle composition. Sensor of the invention, pair H 2 The S molecule has high sensitivity, high selectivity and quick response, and the p-type delafossite sensitive layer does not need complicated shape control, defect regulation or special heterostructure settingAnd the preparation method is simple.)

1. A hydrogen sulfide gas sensing material, characterized by: the sensing material comprises p-type delafossite CuAlO2Particles and/or CuCrO2Particles of the CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm.

2. A hydrogen sulfide gas sensor, characterized by: the p-type delafossite sensitive layer is coated on the interdigital testing electrode and attached to the surface of the planar ceramic substrate, and is formed by CuAlO2Particles and/or CuCrO2Particle composition of said CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm.

3. The hydrogen sulfide gas sensor according to claim 2, wherein: the thickness of the p-type delafossite sensitive layer is 0.5-100 mu m.

4. The hydrogen sulfide gas sensor according to claim 2, wherein: the planar ceramic substrate is composed of a high-purity alumina ceramic wafer, the interdigital testing electrode is a Pt or Au interdigital testing electrode, and the heating electrode is Pt or Au or RuO2The electrodes are heated.

5. A method for producing a hydrogen sulfide gas sensor according to any one of claims 2 to 4, comprising the steps of:

step 1, adding ethanol or isopropanol into CuAlO2And/or CuCrO2Grinding the particles for 5-30 min to prepare p-type delafossite sensitive layer slurry;

in addition, the planar ceramic substrate is cleaned and subjected to hydrophilic treatment by using an ultraviolet ozone or oxygen plasma cleaning machine;

step 2, uniformly coating the p-type delafossite sensitive layer slurry on the interdigital test electrode on the surface of the planar ceramic substrate, and naturally drying;

step 3, repeating the step 2 until the p-type delafossite sensitive layer reaches the required thickness;

and 4, carrying out aging treatment on the p-type delafossite sensitive layer in the air by using the heating electrode on the surface of the planar ceramic substrate, wherein the aging temperature is 100-450 ℃, and the aging time is 1-5 weeks.

6. The method of manufacturing a hydrogen sulfide gas sensor according to claim 5, wherein: the CuAlO2And/or CuCrO2The weight ratio of the particles to the ethanol or the isopropanol is 1 (2-10).

7. A method of using the hydrogen sulfide gas sensor according to any one of claims 2 to 4, wherein: when the sensor is used, the p-type delafossite sensitive layer is heated to 150-205 ℃ through the heating electrode.

Technical Field

The invention belongs to the technical field of hydrogen sulfide gas sensors, and particularly relates to a hydrogen sulfide gas sensing material, a sensor, a preparation method and a use method.

Background

Hydrogen sulfide (H)2S) is a colorless, inflammable, extremely toxic and pungent gas, is widely applied to petrochemical industry, and is an important chemical raw material. H2S is a strong neurotoxin, has strong stimulation and corrosion effects on tissues such as mucosa, respiratory system, eyes and the like, and is H within a working day according to the professional health standard (GBZ 2.1.1-2007) of the national standards of the people' S republic of China, namely, the workplace harmful factor occupational contact limit value chemical harmful factor2The maximum allowable concentration of S is 10mg/m3(about 7.2 ppm). The oxide semiconductor sensor has the advantages of small volume, low power consumption, low cost, quick response, good chip compatibility and the like, and is expected to realize real-time and networking monitoring and early warning of important places such as factories, mines, parks and the like. In recent years, oxide semiconductor-based H2S-sensitive material (including SnO2、ZnO、WO3CuO, NiO, etc.) have received a great deal of attention and have made great progress in key performance indicators such as sensitivity, etc., the sensing material needs to be designed and controlled in a complex shape when used, such as a porous graded ZnO hollow tube (Large-scale synthesis of porous structure for a fast response to ppb-Level H)2S gas, ACS Applied Materials Interfaces 2019,11,11627-3(Low-temperature H2S detection with hierarchical Cr-doped WO3Acs Applied Materials Interfaces 2016,8,9674-2nanowire/NiO nanoparticle heterojunction (Giant enhancement of H)2S gas response by decorating n-type SnO2 nanowires with p-type NiO nanoparticles,Applied Physics Letters,2012,101,253106)、SnO2nanowire/CuO nanoparticlesHeterojunction (hetero-structured p-CuO (nanoparticle)/n-SnO2(nanowire)devices for selective H2S detection. sensors activators B: chemical 2013,181,130-135) to enhance the sensing material pair H2Sensitivity of the S molecule. Traditional high sensitivity H2The disadvantages of the S-oxide semiconductor gas sensor: firstly, the sensing material is complex in design; second, the sensing material is designed at lift H2The sensitivity of S is also likely to enhance the electrical response of the sensing material to other gas molecules (the porous hierarchical structure or nanoparticle modification is usually to increase the surface active sites and enhance the response of multiple gas molecules at the same time).

Disclosure of Invention

In order to solve the above technical problems, the present invention provides a hydrogen sulfide gas sensing material. The sensing material is not only for H2The sensitivity of the S molecule is high, and complex morphology regulation, doping or heterojunction design is not needed.

In order to realize the purpose of the invention, the invention adopts the following technical scheme:

a hydrogen sulfide gas sensing material comprises p-type delafossite CuAlO2Particles and/or CuCrO2Particles of the CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm.

The invention has a second purpose of providing a hydrogen sulfide gas sensor, which comprises a p-type delafossite sensitive layer and a planar ceramic substrate, wherein an interdigital test electrode and a heating electrode for heating the p-type delafossite sensitive layer are arranged on the surface of the planar ceramic substrate, the p-type delafossite sensitive layer is coated on the interdigital test electrode and is attached to the surface of the planar ceramic substrate, and the p-type delafossite sensitive layer is formed by CuAlO2Particles and/or CuCrO2Particle composition of said CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm.

According to a further technical scheme, the thickness of the p-type delafossite sensitive layer is 0.5-100 mu m.

In a further technical scheme, the planar ceramic substrate is composed of a high-purity alumina ceramic waferThe interdigital test electrode is a Pt or Au interdigital test electrode, and the heating electrode is Pt or Au or RuO2The electrodes are heated.

The third purpose of the invention is to provide a preparation method of the hydrogen sulfide gas sensor, which comprises the following steps:

step 1, adding ethanol or isopropanol into CuAlO2And/or CuCrO2Grinding the particles for 5-30 min to prepare p-type delafossite sensitive layer slurry;

in addition, the planar ceramic substrate is cleaned and subjected to hydrophilic treatment by using an ultraviolet ozone or oxygen plasma cleaning machine;

step 2, uniformly coating the p-type delafossite sensitive layer slurry on the interdigital test electrode on the surface of the planar ceramic substrate, and naturally drying;

step 3, repeating the step 2 until the p-type delafossite sensitive layer reaches the required thickness;

and 4, carrying out aging treatment on the p-type delafossite sensitive layer in the air by using the heating electrode on the surface of the planar ceramic substrate, wherein the aging temperature is 100-450 ℃, and the aging time is 1-5 weeks.

Further technical scheme, the CuAlO2And/or CuCrO2The weight ratio of the particles to the ethanol or the isopropanol is 1 (2-10).

The fourth purpose of the invention is to provide a using method of the hydrogen sulfide gas sensor, namely, when the sensor is used, the p-type delafossite sensitive layer is heated to 150-205 ℃ through the heating electrode.

The invention has the beneficial effects that:

the sensor prepared from the sensing material provided by the invention is used for detecting H at the working temperature of 160 DEG C2The S molecule has high sensitivity, 10ppm H2Sensitivity of S (R)H2S/RAir (a)) Up to 4600; in addition, the selectivity is high, and the catalyst has high selectivity on various common reducing gases such as 10-100 ppm of NH3The sensitivity of ethanol, acetone, formaldehyde, normal hexane and xylene is less than 2 to H2The sensitivity of S is three orders of magnitude lower, which indicates that the sensor hasOutstanding H2S is selective; also, the sensor response (resistance increased by 3 orders of magnitude in about 13 seconds) recovered quickly (about 37 seconds). The p-type delafossite sensitive layer does not need complicated appearance control, defect regulation or special heterostructure design, and the preparation method is simple.

Drawings

Fig. 1 is a schematic view of the hydrogen sulfide gas sensor of the present invention, wherein the meaning of the symbols in fig. 1 is: the device comprises a 1-p-type delafossite sensitive layer, a 2-heating electrode, a 3-interdigital testing electrode and a 4-planar ceramic substrate.

FIG. 2 shows CuAlO2Morphology and structural characterization of the particle structure, fig. 2 (a) is a Scanning Electron Microscope (SEM) image; FIG. 2 (b) is an X-ray diffraction pattern of CuAlO2The particles are of a 3R and 2H type composite structure of the delafossite, and the 3R type is mainly used; FIG. 2 (c) is a low Transmission Electron Microscope (TEM) image; in FIG. 2, (d) is a High Resolution Transmission Electron Microscope (HRTEM) image, and (012) the interplanar spacing is clearly visible; in FIG. 2, (e) is a Selected Area Electron Diffraction (SAED) diagram, and diffraction spots/rings correspond to (012), (018), and (110) crystal planes.

FIG. 3 is CuAlO2To H2S gas-sensitive response Performance results are shown schematically, and (a) in FIG. 3 is the sensor pair at 50ppm H at different temperatures2S response; in fig. 3, (b) is the dependence of the sensor sensitivity, response, desorption time and operating temperature; in FIG. 3, (c) shows the temperature of the sensor at 160 ℃ for 10-50 ppm H2A dynamic response curve of S; FIG. 3 (d) shows sensor sensitivity and H2The corresponding relation of S concentration.

In FIG. 4, (a) is CuAlO2The sensitivity of the sensor to different gases at a working temperature of 160 ℃; (b) the typical repeatability curve of the sensor is that the working temperature is 160 ℃, H2The S concentration was 10ppm and the number of cycles was 8.

Detailed Description

The technical scheme of the invention is explained in more detail as follows:

the hydrogen sulfide gas sensing material comprises p-type delafossite CuAlO2Particles and/or CuCrO2Particles of the CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm. FIG. 2 shows CuAlO2The morphology and structural characterization of the particle structure can be seen from fig. 2: CuAlO prepared by sol-gel method2The particles have irregular shapes, the particle size is between dozens of nanometers and about 10 mu m, and the X-ray diffraction and the electron diffraction of a selective area of a transmission electron microscope indicate that CuAlO2The particles are of a delafossite 3R and 2H type composite structure, and mainly take a 3R type.

The hydrogen sulfide gas sensor of the present invention is shown in fig. 1: the p-type delafossite sensitive layer is coated on the interdigital testing electrode and attached to the surface of the planar ceramic substrate, and is formed by CuAlO2Particles and/or CuCrO2Particle composition of said CuAlO2Granules, CuCrO2The particle size of the particles is 10 nm-20 μm. The thickness of the p-type delafossite sensitive layer is 0.5-100 mu m.

The planar ceramic substrate is composed of a high-purity alumina ceramic wafer, the interdigital testing electrode is a Pt or Au interdigital testing electrode, and the heating electrode is Pt or Au or RuO2The electrodes are heated. The interdigital testing electrode can be used for testing the change of current or resistance in the p-type delafossite sensitive layer when the sensor is used, and H in the tested environment is obtained according to the change2The concentration of S molecules reaches workplace H2And when the maximum allowable concentration of S is about 7.2ppm, carrying out quick early warning. The heating electrode can be used for carrying out heating aging treatment on the p-type delafossite sensitive layer in the preparation process on one hand, and can be used for heating the p-type delafossite sensitive layer in the use process of the sensor on the other hand, so that the p-type delafossite sensitive layer can carry out H-type delafossite2The sensitivity of the S molecule is highest.

The preparation method of the hydrogen sulfide gas sensor comprises the following steps:

step 1, taking 1g of CuAlO2Putting the powder into an agate mortar, dripping 2-10 g of ethanol or isopropanol, and grinding for 5-30 min to prepare uniform powderDispersed slurry of the p-type delafossite sensitive layer;

regarding the amount of ethanol or isopropanol used: when the amount of ethanol or isopropanol is large, CuAlO2The slurry is thin and even, but the required thickness of the p-type delafossite sensitive layer can be achieved by brushing for multiple times; when the amount of ethanol or isopropanol is small, the slurry is thick, the slurry brushing times can be reduced, but the slurry is likely to be uneven; the uniformity and the brushing times of brushing the p-type delafossite sensitive layer need to be considered in the actual operation;

with respect to the grinding time: the grinding time is too short, the slurry is possibly uneven, the uniformity is improved when the grinding time is prolonged, but the solvent is obviously volatilized when the grinding time is too long (such as more than 30 minutes), and the slurry is thickened and uneven;

in addition, the planar ceramic substrate is cleaned and subjected to hydrophilic treatment by using an ultraviolet ozone or oxygen plasma cleaning machine;

step 2, uniformly coating the p-type delafossite sensitive layer slurry on the interdigital test electrode on the surface of the planar ceramic substrate in a dripping, blade coating or dipping manner, and naturally airing;

the interdigital testing electrode and the heating electrode are deposited on the surface of the planar ceramic substrate by Pt or Au slurry after silk-screen printing, leveling and sintering;

step 3, repeating the step 2 until the p-type delafossite sensitive layer reaches the required thickness;

and 4, carrying out aging treatment on the p-type delafossite sensitive layer in air by using a heating electrode on the surface of the planar ceramic substrate or a tube furnace/box furnace/hot table, wherein the aging temperature is 100-400 ℃, and the aging time is 1-5 weeks.

Because of CuAlO2The adhesive force of the powder/alcohol slurry is weak, the sensitive layer is easy to fall off from the ceramic substrate, and the aging treatment can obviously enhance the CuAlO2Adhesion of the sensitive layer on the ceramic substrate; in addition, the aging can also improve the repeatability and stability of the response of the device to gas. When the aging temperature is too low, the heat energy is not enough to make CuAlO2Inter-particle and CuAlO2The particles are bonded with the bottom electrode, so that the device is low in adhesiveness, stability and repeatability; aging ofAt too high a temperature, despite the presence of CuAlO2A strong adhesive layer and a stable conductive path can be formed between particles, but the migration (disappearance) of active sites such as surface steps and increased atoms of the particles may be caused, thereby decreasing the sensitivity of the device. Therefore, the sensitivity, stability and repeatability of the device can be favorably considered at lower temperature (such as 100-400 ℃) and long aging time (1-5 weeks).

The use method of the hydrogen sulfide gas sensor provided by the invention is characterized in that when the sensor is used, the p-type delafossite sensitive layer is heated to 150-205 ℃ through the heating electrode. Namely when the p-type delafossite sensitive layer works at the temperature of 150-205 ℃, the p-type delafossite sensitive layer is used for H2The sensitivity of S molecules reaches the highest (for 5-50 ppm H)2S resistance changes by 3 orders of magnitude), the sensitivity to various reducing gases is less than 1 order of magnitude, and the sensor selectivity and the test accuracy are higher.

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