阅读说明：本技术 基于二维层状半导体材料的偏振光探测器及其制备方法 (Polarized light detector based on two-dimensional layered semiconductor material and preparation method thereof ) 是由 黄皖 魏钟鸣 文宏玉 李京波 于 2019-09-25 设计创作，主要内容包括：一种基于二维层状半导体材料的偏振光探测器、其制备方法及应用,该偏振光探测器包括基底和均设置在基底上的源电极、漏电极以及有源层；所述有源层设置在源电极和漏电极之间。本发明通过使用二维层状半导体材料作为有源层,而源电极、漏电极均为金属材料,选择合适的金属材料金,使半导体和金属的交界面为欧姆接触,保留材料本身的光电性质；本发明使用的二硫化铅锡具有高的光电响应率及偏振性,且光吸收区域覆盖紫外到近红外波段,在偏振光探测中有广泛的应用。(A polarized light detector based on two-dimensional layered semiconductor material, a preparation method and an application thereof are provided, wherein the polarized light detector comprises a substrate, and a source electrode, a drain electrode and an active layer which are all arranged on the substrate; the active layer is disposed between the source electrode and the drain electrode. According to the invention, a two-dimensional layered semiconductor material is used as an active layer, a source electrode and a drain electrode are both made of metal materials, and a proper metal material gold is selected, so that the interface of a semiconductor and the metal is in ohmic contact, and the photoelectric property of the material is retained; the lead-tin disulfide used in the invention has high photoelectric response rate and polarization, and the light absorption region covers ultraviolet to near-infrared wave bands, so that the lead-tin disulfide has wide application in polarized light detection.)

1. A polarized light detector based on a two-dimensional layered semiconductor material, comprising: the organic light emitting diode comprises a substrate, and a source electrode, a drain electrode and an active layer which are all arranged on the substrate;

the active layer is disposed between the source electrode and the drain electrode.

2. A polarized light detector as claimed in claim 1,

the substrate comprises a silicon layer and a silicon dioxide layer arranged on the silicon layer; the source electrode, the drain electrode and the active layer are all arranged on the silicon dioxide layer.

3. A polarized light detector as claimed in claim 1,

the active layer is made of two-dimensional layered semiconductor materials;

the thickness of the active layer is 1-50 nm.

4. A polarized light detector as claimed in claim 1,

the two-dimensional layered semiconductor material has anisotropy;

the two-dimensional layered semiconductor material comprises a P-type two-dimensional layered semiconductor material;

preferably, the two-dimensional layered semiconductor material comprises lead tin disulfide.

5. A polarized light detector as claimed in claim 1,

the source electrode and the drain electrode are made of gold;

the interfaces of the active layer and the source electrode and the drain electrode are in ohmic contact;

the work functions of the source electrode material and the drain electrode material are matched with the Fermi level of the active layer material;

the thickness of the source electrode and the thickness of the drain electrode are both 20-100 nm.

6. A polarized light detector as claimed in claim 1,

the detection wave band of the linearly polarized light detector is from ultraviolet to near infrared.

7. A method of manufacturing a polarized light detector according to any of claims 1-6, comprising the steps of:

preparing an active layer on a substrate;

respectively preparing a drain electrode and a source electrode on two sides of the active layer on the substrate and leading;

and packaging the formed device to obtain the polarized light detector.

8. The production method according to claim 7,

the step of preparing an active layer on a substrate specifically comprises: transferring a two-dimensional layered semiconductor material on a substrate by using polydimethylsiloxane as an active layer;

the steps of preparing the drain and source electrodes specifically include:

spin coating a mask material on the substrate with the prepared active layer;

etching electrode areas of the source electrode and the drain electrode on the mask material;

depositing gold on the electrode area;

and removing the mask material to obtain the source electrode and the drain electrode.

9. The method according to claim 8,

the mask material comprises polymethyl methacrylate;

the electrode areas of the source electrode and the drain electrode are obtained by adopting electron beam etching;

the source electrode and the drain electrode are obtained by deposition through a magnetron sputtering method;

the step of removing the mask material comprises the step of cleaning and removing the mask material by sequentially adopting acetone, ethanol and deionized water.

10. Use of a polarized light detector according to any one of claims 1 to 6 or a polarized light detector obtained by the method of manufacture according to any one of claims 7 to 9 in the field of photodetectors.

Technical Field

The invention relates to the technical field of preparation of optical detectors, in particular to a polarization optical detector based on a two-dimensional layered semiconductor material and a preparation method thereof.

Background

Two-dimensional material photodetectors have attracted considerable attention over the past decade. The transition metal chalcogenide is an important two-dimensional material, and has great potential in the field of photoelectric detectors due to excellent photoelectric properties. With the rapid development of scientific technology, the requirements on the photoelectric detector are higher and higher, the widening of the detection spectrum range of the photoelectric detector is an important direction, and meanwhile, the polarized light detection can provide higher detection precision, so that the photoelectric detector has wide application prospects in the future photoelectric detection field.

The principle of a photodetector is that light excites carriers to cause a change in the conductivity of the irradiated material, thereby converting an optical signal into an electrical signal. Since the successful preparation of graphene in 2004, two-dimensional materials have rapidly developed. Two-dimensional photodetectors are of great interest because of their small size, low power consumption, fast response, and other features. Photoelectric detection plays an important role in infrared imaging, environmental monitoring, optical communication and the like. Currently, many two-dimensional semiconductor materials have been applied to the field of photodetection, such as molybdenum disulfide, tin disulfide, rhenium diselenide, gallium telluride, and the like. However, the detection spectrum range of these materials is relatively single, e.g., limited to the visible or near infrared region. Therefore, finding materials that respond to a wide spectral range is an important direction. The two-dimensional material with low symmetry has anisotropy, and when the two-dimensional material is applied to a photoelectric detector, linearly polarized light detectors sensitive to polarized light in different directions can be prepared, so that the detection accuracy and sensitivity are improved.

Disclosure of Invention

In view of the above, it is a primary objective of the present invention to provide a polarization photodetector based on two-dimensional layered semiconductor material, a method for manufacturing the same, and applications thereof, so as to at least partially solve at least one of the above technical problems.

In order to achieve the above object, as one aspect of the present invention, there is provided a polarization photodetector based on a two-dimensional layered semiconductor material, comprising:

the organic light emitting diode comprises a substrate, and a source electrode, a drain electrode and an active layer which are all arranged on the substrate;

the active layer is disposed between the source electrode and the drain electrode.

As another aspect of the present invention, there is also provided a method for manufacturing the polarized light detector described above, including the steps of:

preparing an active layer on a substrate;

respectively preparing a drain electrode and a source electrode on two sides of the active layer on the substrate and leading;

and packaging the formed device to obtain the polarized light detector.

As a further aspect of the invention, the invention also provides an application of the polarized light detector or the polarized light detector obtained by the preparation method in the field of photoelectric detectors.

According to the technical scheme, the polarization photodetector based on the two-dimensional layered semiconductor material, the preparation method and the application thereof have at least one or part of the following beneficial effects:

(1) according to the invention, a two-dimensional layered semiconductor material is used as an active layer, a source electrode and a drain electrode are both made of metal materials, and a proper metal material gold is selected, so that the interface of a semiconductor and the metal is in ohmic contact, and the photoelectric property of the material is retained;

(2) the lead-tin disulfide used in the invention has high photoelectric response rate and polarization, and the light absorption region covers the ultraviolet to near-infrared wave band, so that the lead-tin disulfide has wide application in polarized light detection;

(3) the active layer of the invention has excellent polarized light detection performance and responds to light (ultraviolet-visible-near infrared) with a wider spectrum;

(4) according to the invention, the two-dimensional semiconductor material mechanically stripped by the adhesive tape is transferred on the silicon/silicon dioxide substrate to serve as the active layer, and the light absorption region of the active layer can be distributed in the ultraviolet-visible-near infrared region, so that the application of polarized light detection is facilitated.

Drawings

Fig. 1 is a schematic structural diagram of a linearly polarized light detector based on a two-dimensional layered semiconductor material according to an embodiment of the present invention;

fig. 2 is a schematic cross-sectional structure diagram of a linearly polarized light detector based on a two-dimensional layered semiconductor material according to an embodiment of the present invention;

fig. 3 is a flowchart of a method for manufacturing a linearly polarized light detector based on a two-dimensional layered semiconductor material according to an embodiment of the present invention.

In the above figures, the reference numerals have the following meanings:

11-a source electrode; 12-a drain electrode; 13-a silicon dioxide layer; 14-P type two-dimensional layered semiconductor material; 15-a silicon layer; 16-laser.

Detailed Description

In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.

The invention discloses a polarized light detector based on a two-dimensional layered semiconductor material, which comprises: the organic light emitting diode comprises a substrate, and a source electrode, a drain electrode and an active layer which are all arranged on the substrate;

the active layer is disposed between the source electrode and the drain electrode.

Wherein the substrate comprises a silicon layer and a silicon dioxide layer disposed on the silicon layer; the source electrode, the drain electrode and the active layer are all arranged on the silicon dioxide layer.

The active layer is made of materials including two-dimensional layered semiconductor materials;

wherein the thickness of the active layer is 1-50 nm.

Wherein the two-dimensional layered semiconductor material has anisotropy;

the two-dimensional layered semiconductor material comprises a P-type two-dimensional layered semiconductor material;

wherein the two-dimensional layered semiconductor material comprises lead tin disulfide.

The source electrode and the drain electrode are made of gold;

wherein, the interfaces of the active layer and the source electrode and the drain electrode are all in ohmic contact;

wherein the work functions of the source electrode material and the drain electrode material are matched with the Fermi level of the active layer material;

wherein the thickness of the source electrode and the drain electrode is 20-100 nm.

The detection waveband of the linearly polarized light detector is from ultraviolet to near infrared.

The invention also discloses a preparation method of the polarized light detector, which comprises the following steps:

preparing an active layer on a substrate;

respectively preparing a drain electrode and a source electrode on two sides of the active layer on the substrate and leading;

and packaging the formed device to obtain the polarized light detector.

Wherein the step of preparing the active layer on the substrate specifically comprises: transferring a two-dimensional layered semiconductor material on a substrate by using polydimethylsiloxane as an active layer;

wherein the step of preparing the drain and source electrodes specifically comprises:

spin coating a mask material on the substrate with the prepared active layer;

etching electrode areas of the source electrode and the drain electrode on the mask material;

depositing gold on the electrode area;

and removing the mask material to obtain the source electrode and the drain electrode.

Wherein the mask material comprises polymethyl methacrylate;

wherein, the electrode areas of the source electrode and the drain electrode are obtained by adopting electron beam etching;

wherein the source electrode and the drain electrode are obtained by deposition through a magnetron sputtering method;

and the step of removing the mask material comprises the step of cleaning and removing the mask material by sequentially adopting acetone, ethanol and deionized water.

The invention also discloses an application of the polarized light detector or the polarized light detector prepared by the preparation method in the field of photoelectric detectors.

In one exemplary embodiment of the present invention, a two-dimensional layered semiconductor material based polarized light detector includes: the silicon chip comprises a silicon chip substrate, a source electrode, a drain electrode and an active layer; the source electrode, the active layer and the drain electrode are sequentially positioned above the silicon/silicon dioxide substrate from left to right; the active layer is made of a P-type two-dimensional layered semiconductor material and has anisotropy; and the source electrode and the drain electrode are made of gold. According to the photoelectric detector based on the two-dimensional layered semiconductor material, the stripped two-dimensional layered semiconductor material is used as an active layer, and a proper electrode material is selected, so that the interface of a semiconductor and metal is in ohmic contact, the intrinsic property of the material is ensured, and the photoelectric detector responds to ultraviolet-visible light-near infrared light waves.

In another exemplary embodiment of the present invention, a linearly polarized light detector based on a two-dimensional layered semiconductor material includes:

a source electrode, a drain electrode, an active layer, and a silicon/silicon dioxide substrate;

the source electrode, the active layer and the drain electrode are sequentially positioned above the silicon dioxide substrate from left to right;

the active layer is made of anisotropic P-type two-dimensional layered semiconductor material;

the source electrode and the drain electrode are both made of metal materials;

and the active layer is in ohmic contact with the interfaces of the source electrode and the drain electrode.

In some embodiments of the invention, the active layer is a P-type two-dimensional layered semiconductor material of lead tin disulfide (PbSnS)₂) (ii) a And the source electrode and the drain electrode are both made of metal Au.

In some embodiments of the invention, thinner PbSnS is peeled from the tape₂The active layer is made of an active layer material, and the thickness of the active layer is 1-50 nm.

In some embodiments of the present invention, the work function of the metal material of the source electrode and the drain electrode is matched with the fermi level of the active layer material to form an ohmic contact, which ensures the intrinsic photoelectric property of the material and is not affected by the contact interface.

In some embodiments of the present invention, the silicon substrate and the silicon dioxide substrate serve as a gate electrode and an insulating layer, respectively.

In some embodiments of the present invention, the detection band of the linearly polarized light detector is the ultraviolet to near-infrared band.

In some embodiments of the invention, the effective size of the active layer: the width is 2 μm, the height is 20nm, the length is 4 μm, the thickness of the source electrode and the drain electrode is 50nm, and the length and the width are 150 μm and 100 μm respectively.

The preparation method of the photoelectric detector based on the P-type two-dimensional layered semiconductor material comprises the following steps:

taking a P-type two-dimensional layered semiconductor material peeled off by a Polydimethylsiloxane (PDMS) transfer tape on a silicon/silicon dioxide substrate as an active layer;

preparing a drain electrode and a source electrode on the silicon/silicon dioxide substrate at the positions of the left side and the right side of the active layer;

and packaging the integral structure formed by the active layer, the drain electrode, the source electrode and the silicon dioxide substrate to obtain the photoelectric detector based on the P-type two-dimensional layered semiconductor material.

In some embodiments of the present invention, preparing a source electrode and a drain electrode on the silicon/silicon dioxide substrate at positions on both left and right sides of the active layer includes:

spin coating a mask material on the silicon/silicon dioxide substrate transferred with the active layer material;

designing an electrode plate, and etching electrode areas of the source electrode and the drain electrode on the mask material;

depositing a metal material gold on the electrode area;

and washing off the mask material to obtain the source electrode and the drain electrode.

In some embodiments of the present invention, the mask material is polymethyl methacrylate (PMMA), and the electrode regions of the source and drain electrodes are etched using an electron beam etching method.

In some embodiments of the invention, the source and drain electrodes are deposited using a magnetron sputtering method.

In some embodiments of the present invention, the mask material is washed with acetone, ethanol, and deionized water in sequence in the mask material washing step.

In yet another exemplary embodiment of the present invention, a polarized light detector based on a two-dimensional layered semiconductor material includes:

a drain electrode, a source electrode, an active layer, and a silicon/silicon dioxide substrate;

the source electrode, the active layer and the drain electrode are sequentially positioned above the silicon/silicon dioxide substrate from left to right;

the active layer is a P-type semiconductor two-dimensional material; the source electrode and the drain electrode are made of gold, and the interface of the active layer and the source electrode and the interface of the active layer and the drain electrode are in ohmic contact, so that photoelectric signals are ensured to come from the materials.

In some embodiments, the material of the active layer is a P-type semiconductor lead tin disulfide two-dimensional layered material; and the source electrode and the drain electrode are both made of metal Au.

In some embodiments, the detection band of the linearly polarized light detector is ultraviolet-visible-near infrared.

In some embodiments, the active layer has a width of 2 μm, a length of 4 μm, and a height of 20nm, and the source and drain electrodes each have a thickness of 50nm and a length and width of 150 μm and 100 μm, respectively.

The preparation method of the wide-spectrum polarization photoelectric detector based on the ohmic contact comprises the following steps:

preparing a P-type two-dimensional semiconductor material on a silicon/silicon dioxide substrate as an active layer;

preparing a source electrode and a drain electrode on the silicon/silicon dioxide substrate at the positions of the left side and the right side of the active layer;

and packaging the integral structure formed by the active layer, the source electrode, the drain electrode and the silicon/silicon dioxide substrate to obtain the linearly polarized light detector based on the two-dimensional layered semiconductor material.

In some embodiments, preparing a source electrode and a drain electrode on the silicon dioxide substrate at positions on both left and right sides of the active layer includes:

spin-coating a mask material on the silicon/silicon dioxide substrate at the left and right sides of the active layer;

designing an electrode plate, and etching electrode areas of the source electrode and the drain electrode on the mask material;

depositing the metallic material gold on the sample;

washing off the mask material to obtain the source electrode and the drain electrode parallel lead;

in some embodiments, the mask material is PMMA, and the electrode regions of the source and drain electrodes are etched using an electron beam etching method.

In some embodiments, the source and drain electrodes are deposited using a magnetron sputtering method.

In some embodiments, the mask material is washed with acetone, ethanol, and deionized water in sequence in the mask material washing step.

In some embodiments, the wire is routed using an aluminum wire ball bonding machine.

The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.

Some embodiments of the invention will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not limited to, examples are shown. Indeed, various embodiments of the invention may be embodied in many different forms and should not be construed as limited to such embodiments.

The invention relates to a polarized light detector based on a two-dimensional layered semiconductor material and a preparation method thereof, wherein the polarized light detector comprises the following components from bottom to top: a silicon/silicon dioxide substrate, a two-dimensional thin semiconductor material, a source metal electrode and a drain metal electrode; the two-dimensional thin layer semiconductor material is a low symmetry material with polarization properties. The material used by the invention has the characteristics of anisotropy, direct band gap and the like, so that the photoelectric detector has response to the laser in a wide spectral range and can detect linearly polarized light in different directions, and the detection accuracy is improved.

Specifically, the polarization light detector based on the two-dimensional layered semiconductor material of this embodiment, as shown in fig. 1, includes:

a source electrode 11, a drain electrode 12, a silicon dioxide substrate 13, and an active layer 14;

the source electrode 11, the active layer 14 and the drain electrode 12 are sequentially positioned above the silicon dioxide substrate 13 from left to right;

the active layer 14 is made of a P-type two-dimensional layered semiconductor material; the material of the source electrode 11 and the drain electrode 12 is a metal material.

In the linearly polarized light detector based on the two-dimensional layered semiconductor material of the embodiment, the P-type two-dimensional layered semiconductor material is used as the active layer 14, and the source electrode 11 and the drain electrode 12 are both made of metal materials, so that the interface between the semiconductor and the metal is in ohmic contact, and the intrinsic photoelectric property of the materials is maintained.

In the embodiment, the material of the active layer 14 is a P-type two-dimensional layered semiconductor material PbSnS₂(ii) a The source electrode 11 and the drain electrode 12 are both made of a metal material Au.

In this embodiment, the ohmic contact at the interface of the P-type two-dimensional layered semiconductor material and the metal retains the intrinsic properties of the active layer material.

The active layer material in this embodiment is PbSnS₂The crystal has direct band gap and low symmetry, and is more beneficial to the absorption of light and the sensitivity to polarized light. The direct band gap facilitates absorption of light by the material, thereby improving the photoresponse and significantly increasing the ratio of photocurrent to dark current. The anisotropy enabling the material to detect different anglesThe polarized light improves the detection precision and accuracy. In addition, the active layer material provided by the embodiment of the invention has response to ultraviolet to near-infrared light bands. These excellent properties broaden the application range of the linearly polarized light detector in the embodiments of the present invention.

In another embodiment, as shown in FIG. 2, a polarization photodetector based on a Schottky structure comprises: a source electrode 11, a drain electrode 12, a silicon dioxide layer 13 and an active layer 14, and a silicon layer 15 under the silicon dioxide substrate. The silicon layer 15 is integral with the silicon dioxide layer 13.

As shown in fig. 3, the method for manufacturing the two-dimensional layered semiconductor-based linearly polarized light detector includes:

s31, a thin P-type two-dimensional layered semiconductor layer peeled off by a PDMS transfer tape on a silicon/silicon dioxide substrate as an active layer 14;

s32, preparing a source electrode 11 and a drain electrode 12 on the silicon dioxide layer 13 at positions on the left and right sides of the active layer 14;

s33, packaging the whole structure formed by the active layer 14, the source electrode 11, the drain electrode 12 and the silicon/silicon dioxide substrate to obtain the two-dimensional layered semiconductor-based broad spectrum photodetector (i.e. the two-dimensional layered semiconductor-based polarized photodetector).

In the preparation method of the linearly polarized light detector based on the two-dimensional layered semiconductor, the two-dimensional layered semiconductor material is transferred on the silicon/silicon dioxide to serve as the active layer 14, so that the light absorption region of the active layer can extend from the ultraviolet region to the near infrared region, which is very favorable for sensitive polarized light detection.

In the present embodiment, a thin two-dimensional layered semiconductor material peeled off with Scotch tape, which is lead tin disulfide (PbSnS) may be transferred as the active layer 14 through Polydimethylsiloxane (PDMS)₂)。

In this embodiment, step S32 includes:

spin coating a mask material on the silicon/silicon dioxide substrate at positions on the left and right sides of the active layer 14;

designing an electrode plate, and etching electrode areas of the source electrode and the drain electrode on a mask material;

depositing a source electrode and a drain electrode on the electrode area;

and washing the mask material to obtain the source electrode and the drain electrode and lead wires.

In this embodiment, the mask material is polymethyl methacrylate (PMMA), and the electrode regions of the source and drain electrodes are etched using electron beams; depositing the source electrode and the drain electrode by adopting a resistance evaporation coating method; and cleaning the mask material by adopting acetone, ethanol and deionized water in sequence, and leading by adopting an aluminum wire ball welding machine.

Up to this point, the present embodiment has been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize the present invention. Furthermore, the above definitions of the various components and methods are not limited to the specific structures, shapes, and configurations described in the embodiments.

It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail.

The linearly polarized light detector based on the two-dimensional layered semiconductor material has excellent performance, responds to ultraviolet to near infrared light wave bands, is relatively high in on-off ratio, and has obvious polarization characteristics.

It is also noted that the illustrations herein may provide examples of parameters that include particular values, but that these parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error tolerances or design constraints. The directional terms used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present invention. In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

It should be noted that throughout the drawings, like elements are represented by like or similar reference numerals. In the above description, some specific embodiments are only used for descriptive purposes and should not be construed as limiting the invention in any way, but merely as exemplifications of embodiments of the invention. Conventional structures or constructions will be omitted when they may obscure the understanding of the present invention. Further, the shapes and sizes of the respective members in the drawings do not reflect actual sizes and proportions, but merely illustrate contents of the embodiments of the present invention.

Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.