阅读说明：本技术 一种双银低辐射玻璃及其生产工艺 (Double-silver low-emissivity glass and production process thereof ) 是由 韩君晖 于 2019-10-08 设计创作，主要内容包括：本发明提供一种双银低辐射玻璃及其生产工艺,所述双银低辐射玻璃包括：玻璃基片；所述玻璃基片表面设有双银低辐射膜层,所述双银低辐射膜层包括由内至外依次设置于所述玻璃基片一面的第一SnO<Sub>x</Sub>层、第一ZnO<Sub>x</Sub>层、第一AgTi层、第二ZnO<Sub>x</Sub>层、第二SnO<Sub>x</Sub>层、第三ZnO<Sub>x</Sub>层、第二AgTi层、第四ZnO<Sub>x</Sub>层以及第三SnO<Sub>x</Sub>层；所述双银低辐射膜层通过磁控溅镀工艺镀膜于玻璃基片表面。所述双银低辐射玻璃,在玻璃基片表面通过磁控溅射工艺镀双银低辐射膜层,所得双银低辐射玻璃可见光透过率高,遮阳系数高,传热性能好,生产制造成本低,经济效益好。(The invention provides double-silver low-emissivity glass and a production process thereof, wherein the double-silver low-emissivity glass comprises the following components in parts by weight: a glass substrate; the surface of the glass substrate is provided with a double-silver low-radiation film layer, and the double-silver low-radiation film layer comprises a first SnO layer and a second SnO layer, wherein the first SnO layer is sequentially arranged on one surface of the glass substrate from inside to outside x Layer, first ZnO x Layer, first AgTi layer, second ZnO x Layer, second SnO x Layer, third ZnO x Layer, second AgTi layer, fourth ZnO x Layer and third SnO x A layer; the double-silver low-emissivity film layer is coated on the surface of the glass substrate by a magnetron sputtering process. According to the double-silver low-emissivity glass, the double-silver low-emissivity film layer is plated on the surface of the glass substrate through the magnetron sputtering process, and the obtained double-silver low-emissivity glass is high in visible light transmittance, high in shading coefficient, good in heat transfer performance, low in production and manufacturing cost and good in economic benefit.)

1. A double silver low emissivity glass, wherein said double silver low emissivity glass comprises:

a glass substrate;

the surface of the glass substrate is provided with a double-silver low-radiation film layer, and the double-silver low-radiation film layer comprises a first SnO layer and a second SnO layer, wherein the first SnO layer is sequentially arranged on one surface of the glass substrate from inside to outside_xLayer, first ZnO_xLayer, first AgTi layer, second ZnO_xLayer, second SnO_xLayer, third ZnO_xLayer, second AgTi layer, fourth ZnO_xLayer and third SnO_xA layer;

the double-silver low-emissivity film layer is coated on the surface of the glass substrate by a magnetron sputtering process.

2. The double silver low emissivity glass of claim 1, wherein said glass substrate is white glass and the glass substrate has a thickness of 5 ~ 10 mm.

3. The double-silver low-emissivity glass according to claim 1, wherein the double-silver low-emissivity glass has a solar shading coefficient of 0.48 or less.

4. The double silver low emissivity glass of claim 1, wherein said double silver low emissivity glass has a heat transfer coefficient of 1.5 ~ 1.8.8.

5. The double silver low emissivity glass of claim 1, wherein said double silver low emissivity glass has a visible light transmittance of 75%.

6. A process for producing the double silver low emissivity glass of any one of claims 1 ~ 5, wherein the process comprises the steps of:

1) the glass substrate is sent into a magnetron sputtering coating chamber, a direct current power supply is adopted, the power is adjusted to 32KW, and O is used₂And Ar gas as a reaction gas, wherein the pressure of the reaction gas is 2.0mt, and first SnO is subjected to magnetron sputtering on the surface of the glass substrate_xA layer;

2) adopting a direct current power supply, and adjusting the power to 12KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the first SnO_xMagnetron sputtering first ZnO on one surface of layer far from glass substrate_xA layer;

3) adopting a direct current power supply, adjusting the power to 2.2KW, taking Ar gas as reaction gas, wherein the gas pressure of the reaction gas is 3.0mt, and the first ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ag, the power of a direct current power supply is adjusted to 2.6KW, and the first ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ti to complete the first AgTi layer on the first ZnO layer_xMagnetron sputtering of the outer surface of the layer;

4) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas is used as a reaction gas, the pressure of the reaction gas is 2.0mt, and second ZnO is subjected to magnetron sputtering on the outer surface of the first AgTi layer_xA layer;

5) adopting a direct current power supply, and adjusting the power to 80KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the second ZnO_xSecond SnO with outer surface being subjected to magnetron sputtering_xA layer;

6) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the second SnO_xMagnetron sputtering third ZnO on the outer surface of the layer_xA layer;

7) by means of a straight barA current source with power adjusted to 3.2KW, Ar gas as reaction gas with pressure of 3.0mt, and the third ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ag, the power of a direct current power supply is adjusted to 2.8KW, and the third ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ti to complete the second AgTi layer on the third ZnO layer_xMagnetron sputtering of the outer surface of the layer;

8) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas is used as a reaction gas, the pressure of the reaction gas is 2.0mt, and fourth ZnO is subjected to magnetron sputtering on the outer surface of the second AgTi layer_xA layer;

9) adopting a direct current power supply, and adjusting the power to 35KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the fourth ZnO_xThird SnO with outer surface being subjected to magnetron sputtering_xAnd finishing the production of the double-silver low-emissivity glass.

7. The process for producing double silver low emissivity glass according to claim 6, wherein O is added₂And a mixed gas of Ar gas as a reaction gas, O₂And Ar gas in a ratio of 100: 8.

8. The process for producing a double silver low emissivity glass according to claim 6, wherein said glass substrate has a sputtering speed of 180 cm/min.

Technical Field

The invention belongs to the technical field of glass production, and particularly relates to double-silver low-emissivity glass and a production process thereof.

Background

Low-E glass is also called Low-emissivity glass, and is a film product formed by plating a plurality of layers of metal or other compounds on the surface of the glass. The coating layer has the characteristics of high visible light transmission and high mid-far infrared ray reflection, so that the coating layer has excellent heat insulation effect and good light transmission compared with common glass and traditional coating glass for buildings.

Glass is an important building material, and with the increasing requirements on the decoration of buildings, the usage amount of glass in the building industry is also increasing. However, in the selection of glazing for buildings today, in addition to aesthetic and appearance features, concerns exist regarding heat management, refrigeration costs, and the balance of comfort of the internal sun's projection. Therefore, the novel noble-Low-E glass in the coated glass family is made to stand out and becomes the focus of attention of people.

For low-emissivity glass, chinese patent publication No. CN105174744B discloses a double-silver low-emissivity coated glass and a laminated glass product based on the coated glass, which comprises a bottom dielectric layer or a sodium barrier layer, an adhesion enhancement layer I, a silver functional layer I, a protective layer I, an intermediate dielectric layer, an adhesion enhancement layer II, a silver functional layer II, a top dielectric layer or a protective layer II in sequence from the glass layer to the outside, wherein the protective layer contains Cr³⁺And Cr⁶⁺Ions, wherein: cr in the protective layer³⁺And Cr⁶⁺Has a molar ratio of 1:2.8 ~ 3.2.2, and the medium layer contains SnO₂、SiO₂. However, the double-silver low-emissivity coated glass provided by the patent has a complex structure and high production cost.

Disclosure of Invention

In order to solve the problems, the invention aims to provide double-silver low-emissivity glass and a production process thereof.

In order to achieve the purpose, the technical scheme of the invention is as follows:

a double silver low emissivity glass, the double silver low emissivity glass comprising: a glass substrate; the surface of the glass substrate is provided with a double-silver low-radiation film layer, and the double-silver low-radiation film layer comprises a first SnO layer and a second SnO layer, wherein the first SnO layer is sequentially arranged on one surface of the glass substrate from inside to outside_xLayer, first ZnO_xLayer, first AgTi layer, second ZnO_xLayer, second SnO_xLayer, third ZnO_xLayer, second AgTi layer, fourth ZnO_xLayer and third SnO_xA layer; the double-silver low-emissivity film layer is coated on the surface of the glass substrate by a magnetron sputtering process.

Further, the glass substrate is white glass, and the thickness of the glass substrate is 5 ~ 10 mm.

Furthermore, the sun-shading coefficient of the double-silver low-emissivity glass is less than or equal to 0.48.

Further, the heat transfer coefficient of the double-silver low-emissivity glass is 1.5 ~ 1.8.8.

Further, the visible light transmittance of the double-silver low-emissivity glass is 75%.

Meanwhile, the invention also provides a production process of the double-silver low-emissivity glass, which comprises the following steps:

1) the glass substrate is sent into a magnetron sputtering coating chamber, a direct current power supply is adopted, the power is adjusted to 32KW, and O is used₂And Ar gas as a reaction gas, wherein the pressure of the reaction gas is 2.0mt, and first SnO is subjected to magnetron sputtering on the surface of the glass substrate_xA layer;

2) adopting a direct current power supply, and adjusting the power to 12KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the first SnO_xMagnetron sputtering first ZnO on one surface of layer far from glass substrate_xA layer;

3) adopting a direct current power supply, adjusting the power to 2.2KW, taking Ar gas as reaction gas, wherein the gas pressure of the reaction gas is 3.0mt, and the first ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ag, the power of a direct current power supply is adjusted to 2.6KW, and the first ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ti to complete the first AgTi layer on the first ZnO layer_xMagnetron sputtering of the outer surface of the layer;

4) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas is used as a reaction gas, the pressure of the reaction gas is 2.0mt, and second ZnO is subjected to magnetron sputtering on the outer surface of the first AgTi layer_xA layer;

5) adopting a direct current power supply, and adjusting the power to 80KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the second ZnO_xSecond SnO with outer surface being subjected to magnetron sputtering_xA layer;

6) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas as a reaction gas, the reaction gas being a gas ofA pressure of 2.0mt in the second SnO_xMagnetron sputtering third ZnO on the outer surface of the layer_xA layer;

7) adopting a direct current power supply, adjusting the power to 3.2KW, taking Ar gas as reaction gas, wherein the gas pressure of the reaction gas is 3.0mt, and adding a third ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ag, the power of a direct current power supply is adjusted to 2.8KW, and the third ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ti to complete the second AgTi layer on the third ZnO layer_xMagnetron sputtering of the outer surface of the layer;

8) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas is used as a reaction gas, the pressure of the reaction gas is 2.0mt, and fourth ZnO is subjected to magnetron sputtering on the outer surface of the second AgTi layer_xA layer;

9) adopting a direct current power supply, and adjusting the power to 35KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the fourth ZnO_xThird SnO with outer surface being subjected to magnetron sputtering_xAnd finishing the production of the double-silver low-emissivity glass.

Further, with O₂And a mixed gas of Ar gas as a reaction gas, O₂And Ar gas in a ratio of 100: 8.

Further, the sputtering transmission speed of the glass substrate is 180 cm/min.

The invention has the beneficial effects that:

according to the double-silver low-emissivity glass, the double-silver low-emissivity film layer is plated on the surface of the glass substrate through the magnetron sputtering process, and the obtained double-silver low-emissivity glass is high in visible light transmittance, high in shading coefficient, good in heat transfer performance, low in production and manufacturing cost and good in economic benefit.

Drawings

Fig. 1 is a schematic structural view of a double-silver low-emissivity glass provided by the invention.

Detailed Description

Referring to fig. 1, the double-silver low-emissivity glass of the invention comprises: a glass substrate 1; the surface of the glass substrate 1 is provided with a double-silver low-radiation film layer 2, and the double-silver low-radiation film layer 2 comprisesA first SnO arranged on one surface of the glass substrate 1 from inside to outside in sequence_xLayer 21, first ZnO_xLayer 22, first AgTi layer 23, second ZnO_xLayer 24, second SnO_xLayer 25, third ZnO_xLayer 26, second AgTi layer 27, fourth ZnO_xLayer 28 and third SnO_xA layer 29; the double-silver low-radiation film layer is coated on the surface of the glass substrate 1 by a magnetron sputtering process.

Further, the glass substrate 1 is white glass, and the thickness of the glass substrate is 5 ~ 10 mm.

Furthermore, the sun-shading coefficient of the double-silver low-emissivity glass is less than or equal to 0.48.

Further, the heat transfer coefficient of the double-silver low-emissivity glass is 1.5 ~ 1.8.8.

Further, the visible light transmittance of the double-silver low-emissivity glass is 75%.

Meanwhile, the invention also provides a production process of the double-silver low-emissivity glass, which comprises the following steps:

1) the glass substrate 1 is sent into a magnetron sputtering coating chamber, a direct current power supply is adopted, the power is adjusted to 32KW, and O is used₂And Ar gas as a reaction gas, wherein the pressure of the reaction gas is 2.0mt, and first SnO is subjected to magnetron sputtering on the surface of the glass substrate_xA layer 21;

2) adopting a direct current power supply, and adjusting the power to 12KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the first SnO_xA first ZnO layer 21 is formed on the surface of the glass substrate 1 away from the surface by magnetron sputtering_xA layer 22;

3) adopting a direct current power supply, adjusting the power to 2.2KW, taking Ar gas as reaction gas, wherein the gas pressure of the reaction gas is 3.0mt, and the first ZnO_xThe outer surface of the layer is magnetically controlled to sputter Ag, the power of a direct current power supply is adjusted to 2.6KW, and the first ZnO_xPerforming magnetron sputtering of Ti on the outer surface of the layer 22 to complete the formation of the first AgTi layer 23 on the first ZnO_xMagnetron sputtering of the outer surface of layer 22;

4) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, forming a second ZnO layer on the outer surface of the first AgTi layer 23 by magnetron sputtering_xA layer 24;

5) adopting a direct current power supply, and adjusting the power to 80KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the second ZnO_xMagnetron sputtering second SnO on outer surface of layer 24_xA layer 25;

6) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the second SnO_xMagnetron sputtering third ZnO on outer surface of layer 25_xA layer 26;

7) adopting a direct current power supply, adjusting the power to 3.2KW, taking Ar gas as reaction gas, wherein the gas pressure of the reaction gas is 3.0mt, and adding a third ZnO_xPerforming magnetron sputtering on the outer surface of the layer 26 with Ag to adjust the power of a direct current power supply to 2.8KW, wherein the third ZnO_xPerforming magnetron sputtering of Ti on the outer surface of the layer 26 to complete the formation of the second AgTi layer 27 on the third ZnO layer_xMagnetron sputtering of the outer surface of layer 26;

8) adopting a direct current power supply, and adjusting the power to 15KW and O₂And Ar gas as a reaction gas, wherein the pressure of the reaction gas is 2.0mt, and fourth ZnO is subjected to magnetron sputtering on the outer surface of the second AgTi layer 27_xA layer 28;

9) adopting a direct current power supply, and adjusting the power to 35KW and O₂And Ar gas as a reaction gas, the pressure of the reaction gas being 2.0mt, in the fourth ZnO_xMagnetron sputtering third SnO on outer surface of layer 28_xLayer 29 completing the production of the double silver low emissivity glass.

Further, with O₂And a mixed gas of Ar gas as a reaction gas, O₂And Ar gas in a ratio of 100: 8.

Further, the sputtering transmission speed of the glass substrate is 180 cm/min.

According to the double-silver low-emissivity glass, the double-silver low-emissivity film layer 2 is plated on the surface of the glass substrate 1 through the magnetron sputtering process, the obtained double-silver low-emissivity glass is high in visible light transmittance, high in sun shading coefficient and good in heat transfer performance, the sun shading coefficient of the double-silver low-emissivity glass is less than or equal to 0.48, the heat transfer coefficient of the double-silver low-emissivity glass is 1.5 ~ 1.8.8, the visible light transmittance of the double-silver low-emissivity glass is 75%, the production and manufacturing cost of the double-silver low-emissivity glass is low, and the economic benefit is good.

It should be noted that the above embodiments are only used to illustrate the technical solution of the present invention and are not limited. Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the present invention.