阅读说明：本技术 彩膜基板、显示面板及彩膜基板制作方法 (Color film substrate, display panel and manufacturing method of color film substrate ) 是由 周淼 于 2021-07-06 设计创作，主要内容包括：本申请公开了一种彩膜基板、显示面板及彩膜基板制作方法。本申请的彩膜基板在色阻层中对不同颜色的色阻单元进行差异化设计,并采用转印的方法设置光转换层。具体的,在色阻层中设置了第一色阻单元和第二色阻单元。第一色阻单元的厚度小于第二色阻单元的厚度,使得转印制程中仅有第二色阻单元与光转换层接触,将光转换层选择性的转印至第二色阻单元上。这样的彩膜基板及制作方法省去了对光转换层的光刻工艺,实现选择性的光转换层转印。能够避免图案化处理时对光转换层材料产生影响,增强了光转换效率,提升了发光效果,进而增强了显示面板的信赖性。(The application discloses a color film substrate, a display panel and a manufacturing method of the color film substrate. According to the color film substrate, the color resistance units with different colors are designed in the color resistance layer in a differentiation mode, and the light conversion layer is arranged by adopting a transfer printing method. Specifically, a first color resistance unit and a second color resistance unit are arranged in the color resistance layer. The thickness of the first color resistance unit is smaller than that of the second color resistance unit, so that only the second color resistance unit is in contact with the light conversion layer in the transfer printing process, and the light conversion layer is selectively transferred to the second color resistance unit. The color film substrate and the manufacturing method thereof omit the photoetching process of the light conversion layer and realize the selective light conversion layer transfer printing. The light conversion layer material can be prevented from being influenced during patterning treatment, the light conversion efficiency is enhanced, the light emitting effect is improved, and the reliability of the display panel is enhanced.)

1. A color film substrate is characterized by comprising:

a substrate;

the color resistance layer is arranged on the substrate and comprises a plurality of first color resistance units and a plurality of second color resistance units which are alternately arranged, and the thickness of each first color resistance unit is smaller than that of each second color resistance unit;

the light conversion layer is arranged on one side, far away from the substrate, of the color resistance layer and corresponds to the second color resistance unit.

2. The color filter substrate according to claim 1, further comprising a protective layer and an enhancement layer, wherein the protective layer is disposed on a side of the light conversion layer away from the substrate, the enhancement layer is disposed on a side of the protective layer away from the substrate, and the enhancement layer is disposed corresponding to the light conversion layer.

3. The color filter substrate according to claim 2, wherein the thickness of the protective layer is between 1nm and 50nm, and the thickness of the enhancement layer is between 1nm and 50 nm.

4. The color filter substrate according to claim 2, wherein the enhancement layer is a nanoparticle, and the particle size of the nanoparticle is between 20nm and 50 nm.

5. The color filter substrate according to claim 1, wherein the first color resist unit comprises a blue sub-color resist layer, the second color resist unit comprises a red sub-color resist layer and a green sub-color resist layer, the adjacent blue sub-color resist layer and the red sub-color resist layer are in contact with each other and partially overlapped, the adjacent blue sub-color resist layer and the green sub-color resist layer are in contact with each other and partially overlapped, and the adjacent red sub-color resist layer and the green sub-color resist layer are in contact with each other and partially overlapped.

6. The color filter substrate according to claim 5, wherein a contact surface between the adjacent blue sub-color resist layer and the adjacent red sub-color resist layer is an inclined surface, a contact surface between the adjacent blue sub-color resist layer and the adjacent green sub-color resist layer is an inclined surface, a contact surface between the adjacent red sub-color resist layer and the adjacent green sub-color resist layer is an inclined surface, and an included angle between the inclined surface and a plane where the substrate is located is 45 ° to 80 °.

7. A display panel, comprising:

a color film substrate, wherein the color film substrate is the color film substrate in any one of claims 1 to 6;

the array substrate is arranged opposite to the color film substrate.

8. A manufacturing method of a color film substrate is characterized by comprising the following steps:

providing a light conversion substrate, wherein the light conversion substrate comprises a substrate and a light conversion layer which are arranged in a stacked mode;

providing a substrate, and forming a color resistance layer on the substrate, wherein the color resistance layer comprises a plurality of first color resistance units and a plurality of second color resistance units, and the thickness of the first color resistance units is smaller than that of the second color resistance units;

and transferring the light conversion layer to the side of the second color resistance unit far away from the substrate.

9. The method for manufacturing a color filter substrate according to claim 8, further comprising, after transferring the light conversion layer to a side of the second color resist unit away from the substrate:

forming a protective layer on one side of the light conversion layer far away from the substrate;

and forming an enhancement layer on one side of the protective layer, which is far away from the substrate, wherein the enhancement layer is arranged corresponding to the second color resistance unit.

10. The method for manufacturing a color film substrate according to claim 8, wherein the step of transferring the light conversion layer to the side of the second color resist unit away from the substrate comprises the following steps:

contacting the second color-resisting unit with the light conversion layer;

heating the second color resistance unit and the light conversion layer to a set temperature and continuously setting the duration; the set temperature is between 50 ℃ and 100 ℃, and the set time is between 10 minutes and 60 minutes;

and stripping the substrate and the light conversion layer corresponding to the first color resistance unit.

Technical Field

The application relates to the technical field of display, in particular to a color film substrate, a display panel and a manufacturing method of the color film substrate.

Background

The Quantum Dot Color Filter (QDCF) has the characteristics of high color gamut and wide viewing angle, can show excellent image quality by matching with backlight technologies such as Mini light-emitting diodes (Mini LEDs) and Micro light-emitting diodes (Micro LEDs), and is a most competitive product in the future display technologies.

In the process of research and practice of the prior art, the inventor of the present application finds that no mass production product exists in the display technology applying the QDCF at present, and one of the main reasons is the manufacturing process of the QDCF. In the fabrication of the QDCF, a Photoresist (PR) is generally mixed with a quantum dot material, and then the QDCF is fabricated by using a photolithography technique. The quantum dots are photoinitiated while the photoresist is patterned by exposure in a photolithographic technique. At this time, the ligand in the Quantum dot is easy to chemically react with PR, so that the light conversion efficiency of the Quantum Dot (QD) material is reduced.

Disclosure of Invention

The application provides a color film substrate, a display panel and a manufacturing method of the color film substrate, and the color film substrate can improve the light conversion efficiency of a light conversion layer.

The application provides a various membrane base plate includes:

a substrate;

the color resistance layer is arranged on the substrate and comprises a plurality of first color resistance units and a plurality of second color resistance units which are alternately arranged, and the thickness of each first color resistance unit is smaller than that of each second color resistance unit.

Optionally, in some embodiments of the present application, the color filter substrate further includes a protective layer and an enhancement layer, the protective layer is disposed on a side of the light conversion layer away from the substrate, the enhancement layer is disposed on a side of the protective layer away from the substrate, and the enhancement layer is disposed corresponding to the light conversion layer.

Optionally, in some embodiments of the present application, a thickness of the protective layer is between 1nm and 50nm, and a thickness of the enhancement layer is between 1nm and 50 nm.

Optionally, in some embodiments of the present application, the enhancement layer is nanoparticles, and the particle size of the nanoparticles is between 20nm and 50 nm.

Optionally, in some embodiments of the present application, the first color resistance unit includes a blue sub-color resistance layer, the second color resistance unit includes a red sub-color resistance layer and a green sub-color resistance layer, the adjacent blue sub-color resistance layer and the red sub-color resistance layer are in contact with each other and partially overlap each other, the adjacent blue sub-color resistance layer and the green sub-color resistance layer are in contact with each other and partially overlap each other, and the adjacent red sub-color resistance layer and the green sub-color resistance layer are in contact with each other and partially overlap each other.

Optionally, in some embodiments of the present application, a contact surface between the adjacent blue sub-color-resist layer and the red sub-color-resist layer is an inclined surface, a contact surface between the adjacent blue sub-color-resist layer and the green sub-color-resist layer is an inclined surface, a contact surface between the adjacent red sub-color-resist layer and the green sub-color-resist layer is an inclined surface, and an included angle between the inclined surface and a plane where the substrate is located is between 45 ° and 80 °.

Correspondingly, the present application further provides a display panel, comprising:

the color film substrate is the color film substrate;

the array substrate is arranged opposite to the color film substrate.

Correspondingly, the application also provides a manufacturing method of the color film substrate, which comprises the following steps:

providing a light conversion substrate, wherein the light conversion substrate comprises a substrate and a light conversion layer which are arranged in a stacked mode;

providing a substrate, and forming a color resistance layer on the substrate, wherein the color resistance layer comprises a plurality of first color resistance units and a plurality of second color resistance units, and the thickness of the first color resistance units is smaller than that of the second color resistance units;

and transferring the light conversion layer to the side of the second color resistance unit far away from the substrate.

Optionally, in some embodiments of the present application, after transferring the light conversion layer to a side of the second color resist unit away from the substrate, the method further includes:

forming a protective layer on one side of the light conversion layer far away from the substrate;

and forming an enhancement layer on one side of the protective layer, which is far away from the substrate, wherein the enhancement layer is arranged corresponding to the second color resistance unit.

Optionally, in some embodiments of the present application, transferring the light conversion layer to a side of the second color resist unit away from the substrate includes:

contacting the second color-resisting unit with the light conversion layer;

heating the second color resistance unit and the light conversion layer to a set temperature and continuously setting the duration; the set temperature is between 50 ℃ and 100 ℃, and the set time is between 10 minutes and 60 minutes;

and stripping the substrate and the light conversion layer corresponding to the first color resistance unit.

The application provides a color film substrate, a display panel and a manufacturing method of the color film substrate. According to the color film substrate, the color resistance units with different colors are designed in the color resistance layer in a differentiation mode, and the light conversion layer is arranged by adopting a transfer printing method. Specifically, a first color resistance unit and a second color resistance unit are arranged in the color resistance layer. The thickness of the first color resistance unit is smaller than that of the second color resistance unit, so that only the second color resistance unit is in contact with the light conversion layer in the transfer printing process, and the light conversion layer is selectively transferred to the second color resistance unit. The manufacturing method of the color film substrate can avoid the influence on the light conversion layer material during patterning treatment, enhances the light conversion efficiency and improves the light emitting effect.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a color film substrate provided in an embodiment of the present application;

fig. 2 is a schematic structural diagram of a display panel provided in an embodiment of the present application;

fig. 3 is a flowchart of a first step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure;

fig. 4a to fig. 4e are schematic diagrams illustrating a first step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure;

fig. 5 is a flowchart of a second step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure;

fig. 6a to fig. 6e are schematic diagrams illustrating a second step of the color filter substrate manufacturing method according to the embodiment of the present application.

Detailed Description

The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings in the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.

The application provides a color film substrate, a display panel and a manufacturing method of the color film substrate. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a color film substrate according to an embodiment of the present disclosure. The color filter substrate 10 includes a substrate 101, a color resist layer 102, and a light conversion layer 103. The color resist layer 102 is provided on the substrate 101. The color resist layer 102 includes a plurality of first color resist units 102a and a plurality of second color resist units 102b alternately arranged. The thickness of the first color resistance unit 102a is smaller than that of the second color resistance unit 102 b. The light conversion layer 103 is disposed on the side of the color resist layer 102 away from the substrate 101. The light conversion layer 103 is disposed corresponding to the second color resist unit 102 b.

The color filter substrate 10 provided in the present application has a color resist layer 102 disposed on a substrate 101. The color resist layer 102 includes a plurality of first color resist units 102a and a plurality of second color resist units 102 b. The thickness of the first color resistance unit 102a of the color resistance layer 102 is smaller than that of the second color resistance unit 102 b. Therefore, when the color filter substrate 10 of the present application is used to transfer the light conversion layer 103, the light conversion layer 103 can be selectively transferred onto the second color resist units 102b in the transfer process. In the transfer printing method, patterning treatment is not required to be carried out on the light conversion layer 103, so that the influence of photoetching on the light conversion layer 103 material is reduced, and the influence on the display effect is avoided.

The substrate 101 refers to a base member for bearing a color film structure. The substrate 101 may be glass, functional glass, or a flexible substrate. Specifically, the flexible substrate may be made of Polyimide (PI), Polydimethylsiloxane (PDMS), Polyethylene (PE), Polypropylene (PP), Polystyrene (PS), Polyethylene terephthalate (PET), or Polyethylene naphthalate (PEN). The polymer material has good flexibility, light weight and impact resistance, and is suitable for flexible display panels. Among them, polyimide can realize good heat resistance and stability. The polydimethylsiloxane can be adjusted to have different elasticity by changing the proportion of the PDMS prepolymer to the curing agent according to the needs, so as to adapt to the color film substrates 10 with different requirements.

The thickness of the first color resistance unit 102a is smaller than that of the second color resistance unit 102 b. Specifically, the thickness of the first color resist unit 102a may be between 0.5 microns and 5 microns. The thickness of the second color resist unit 102b may be between 1 micron and 5.5 microns. The thickness difference between the first color resistance unit 102a and the second color resistance unit 102b is between 0.2 microns and 0.5 microns.

Please continue to refer to fig. 1. The first color resist unit 102a includes a blue sub-color resist 1021, and the second color resist unit 102b includes a red sub-color resist 1022 and a green sub-color resist 1023.

In this embodiment, the thickness of the blue sub-resist 1021 is set to be less than the thickness of the red sub-resist 1022 and the green sub-resist 1023. The color filter substrate 10 may be applied to a display panel with a blue backlight. Since the thickness of the blue sub-color resist 1021 is small, the light-converting layer 103 will not be transferred to the blue sub-color resist 1021 during the transfer process. The blue backlight can directly pass through the blue sub-color resist layer 1021, and the photolithography process for the light conversion layer 103 at the position corresponding to the blue sub-color resist layer 1021 can be omitted.

The thicknesses of the red sub-resist layer 1022 and the green sub-resist layer 1023 are kept as uniform as possible. Because the light conversion layer 103 is transferred onto the red sub-resist layer 1022 and the green sub-resist layer 1023 at one time in the subsequent transfer process. If there is a difference in thickness, incomplete transfer may result, and a more planar light conversion layer 103 may be obtained by maintaining the thickness uniformly. However, in the manufacturing process, the thickness error between the red sub-resist 1022 and the green sub-resist 1023 is allowed. The difference between the thickness of the red sub-resists 1022 and the thickness of the green sub-resists 1023 should not exceed 0.3% of the elastic deformation of the resists. For example, if the thickness of the color resist is 5 μm, the difference between the thicknesses of the red sub-resist layer 1022 and the green sub-resist layer 1023 should not exceed 0.015 μm.

The adjacent blue sub-color resist layer 1021 and the red sub-color resist layer 1022 are in contact with each other and partially overlap each other. Adjacent blue sub-resist 1021 and green sub-resist 1023 contact each other and partially overlap. The adjacent red sub-resist layer 1022 and green sub-resist layer 1023 contact each other and partially overlap. For example, the color resist layer 102 arranges sub-color resist layers in a color order of red, green, and blue. Then, the red sub-resist layer 1022 and the adjacent blue sub-resist layer 1021 and green sub-resist layer 1023 are in contact with each other, and the contact portions are partially overlapped. The overlapped color-resist layer 102 has a low light transmittance, so as to achieve the effects of preventing light leakage and color mixing, and reduce crosstalk between the light-emitting pixels of different colors. Therefore, in the color film substrate 10 of the present application, a Black Matrix (BM) does not need to be arranged, and the pixel aperture ratio is increased.

The material used for the black matrix usually contains carbon element. Therefore, the resistivity of the black matrix is low, the risk of introducing static electricity is increased, and the display effect of the display device is further influenced. The design of the black matrix is cancelled, and the static risk can be avoided. Moreover, the overlapped color resistance layers 102 are adopted to realize the shading effect of the black matrix, so that the manufacturing process of the black matrix is reduced, and the production cost is reduced.

It can be understood that the color filter substrate 10 is exemplarily described in this embodiment as applied to a display panel with a blue backlight. When the color filter substrate 10 of the present application is applied to a display panel with backlight of other colors, the colors of the first color resist unit 102a and the second color resist unit 102b can be adaptively changed. The color filter substrate 10 provided in the present application can be applied not only to a display panel with a blue backlight, but also to display panels with other color backlights, for example, a display panel with a white backlight, and the specific configuration of the color filter substrate 10 is not described herein again.

Please continue to refer to fig. 1. In the color resist layer 102 of the color filter substrate 10, the contact surface between the adjacent blue sub-color resist layer 1021 and the red sub-color resist layer 1022 is an inclined surface. The interface between adjacent blue sub-resist 1021 and green sub-resist 1023 is beveled. The interface between the adjacent red sub-resist 1022 and green sub-resist 1023 is a bevel. Optionally, the blue sub-color resist 1021, the red sub-color resist 1022 and the green sub-color resist 1023 have two slopes. Two adjacent sub-color-resisting layers are contacted at the inclined plane and are overlapped. Because the adjacent blue sub-color resist 1021, red sub-color resist 1022 and green sub-color resist 1023 are overlapped, the light transmittance of the overlapped area is obviously reduced, and the effects of light leakage prevention and color mixing prevention can be achieved. When each of the blue sub-color resist 1021, the red sub-color resist 1022 and the green sub-color resist 1023 has two inclined surfaces, an overlapping area can be easily formed between the sub-color resists. Moreover, when the area of the orthogonal projection on the substrate 101 is the same, the inclined surface can increase the overlapping area and the overlapping thickness of the adjacent first color resist unit 102a and the second color resist unit 102b compared with the vertical contact surface, and the thickness of the color resist unit itself is not affected. Therefore, the contact surface is set to be the inclined surface, so that the overlapping area can be increased, the overlapping area can obtain a better shading effect, meanwhile, the thickness of the color resistance layer 102 is prevented from being increased, and the light and thin of the display panel are guaranteed.

Wherein, the included angle α between the inclined plane and the plane of the substrate 101 is 45 ° to 80 °. Specifically, the included angle α between the inclined surface and the substrate 101 may be 45 °, 50 °, 55 °, 60 °, 65 °, 70 °, 75 °, or 80 °. In forming the color resist layer 102, a blue sub-color resist layer 1021 may be formed on the substrate 101. The boundary of the blue sub-resist 1021 is then used as the starting position for the subsequent fabrication of the sub-resist. Specifically, when forming the blue sub-color resist layer 1021, the blue sub-color resist layer 1021 having a sharp slope can be formed by controlling the exposure amount of the photolithography process. A red sub-resist 1022 is then formed adjacent to the blue sub-resist 1021. Thus, the sidewall of the red sub-resist layer 1022 is formed to be in contact with the sidewall of the blue sub-resist layer 1021 at the slope. The better color resist layer 102 can be obtained by setting the included angle alpha between the inclined plane of the sub color resist layer and the substrate 101 to be more than 45 degrees under the limitation of the parameters of the photoetching process. However, when the included angle α is greater than 80 °, the contact area between adjacent sub-color resists is reduced, thereby affecting the light-shielding effect.

The color film substrate 10 provided by the present application can be transferred to the light conversion layer 103 by a transfer printing process, so as to avoid the influence of the photolithography process on the material of the light conversion layer 103. In the color filter substrate 10 provided in the present application, the thickness of the first color resistance unit 102a is smaller than that of the second color resistance unit 102 b. Therefore, in the transfer process, the light conversion layer 103 is in contact with the second color resist unit 102b, but not in contact with the first color resist unit 102 a. Thus, the light conversion layer 103 can be provided corresponding to the second color resist unit 102 b.

Among them, the light conversion layer 103 may be a quantum dot layer. The particle size of Quantum Dot (QD) materials is typically between 1 nanometer (nm) and 10 nm. Because electrons and holes are limited by quanta, the continuous energy band structure is changed into a discrete energy level structure, so that the light-emitting spectrum of the quantum dot material is very narrow. Therefore, the quantum dot light-emitting device has high color purity and wide display color gamut. Meanwhile, the loss of the light converted by the quantum dots through the color resistance layer 102 is very small, and low-power display can be realized.

The quantum dot comprises a core-shell structure composed of a luminescent core material and an inorganic protective shell material. The luminescent nuclear material is ZnCdSe₂、InP、Cd₂One or more of Sse, CdSe, Cd2SeTe and InAs. The inorganic protective shell layer is made of CdS, ZnSe, ZnCdS2, ZnS anda combination of one or more of ZnO.

The light conversion layer 103 may also be an up-conversion material, among others. Upconverters are materials that emit short wavelength light when excited by long wavelength light, and such materials are often excited by near infrared light to produce visible light. The near infrared light source has a high penetration depth. The up-conversion material has the advantages of large anti-Stokes displacement, long fluorescence service life, high light stability, strong chemical stability, high signal-to-noise ratio and the like.

Wherein the thickness of the light conversion layer 103 is 5 micrometers (μm) to 20 μm. Specifically, the thickness of the light conversion layer 103 is 5 μm, 7 μm, 10 μm, 12 μm, 15 μm, or 20 μm. It is to be understood that the thickness of the light conversion layer 103 is not limited to the above exemplified values. When the thickness of the light conversion layer 103 is set in the range of 5 μm to 20 μm, the light conversion efficiency of the light conversion layer 103 can be ensured, and the light conversion layer 103 can be more completely transferred onto the color resist layer 102.

The color filter substrate 10 further includes a protection layer 104 and an enhancement layer 105. The protective layer 104 is provided on the side of the light conversion layer 103 away from the substrate 101. The reinforcing layer 105 is disposed on a side of the protective layer 104 away from the substrate 101. The enhancement layer 105 is disposed corresponding to the light conversion layer 103.

The material used for the protection layer 104 is a silicon oxide compound, a silicon nitride compound, or a combination thereof. The passivation layer 104 may be a single layer, for example, the passivation layer 104 may be a silicon oxide layer, the passivation layer 104 may be a silicon nitride layer, or the passivation layer 104 may be a combination of silicon oxide and silicon nitride. It is understood that the protective layer 104 may also be a combination of multiple film layers. The passivation layer 104 can block the light conversion layer 103 from water and oxygen, thereby improving the reliability of the light conversion layer 103. The passivation layer 104 can cover the entire surface of the color resist layer 102, thereby eliminating the patterning process of the passivation layer 104, saving a mask process and reducing the production cost.

Wherein the enhancement layer 105 and the protection layer 104 can generate surface plasmon resonance. Specifically, the material used for the reinforcement layer 105 is a metal material or a metal composite material. When the color filter substrate 10 is excited by a blue backlight, the material of the enhancement layer 105 isA metal material having a characteristic absorption peak wavelength in the range of 430nm to 500 nm. Specifically, the material used for the enhancement layer 105 is silver (Ag), a combination of Ag and a silicon oxide compound, or a combination of Ag and a titanium oxide compound. Wherein the silicon oxide compound can be SiO₂The titanyl compound may be titanium dioxide (TiO)₂). In some embodiments, the reinforcing layer 105 may be made of the above materials as nanoparticles and then disposed on the side of the protective layer 104 away from the substrate 101.

When the light conversion layer 103 is excited by the light, the light passes through the enhancement layer 105, and surface plasmon resonance occurs, so that the light conversion efficiency of the light conversion layer 103 is enhanced.

Surface Plasmon Resonance (SPR) refers to nanoparticles that are incident on the enhancement layer 105 from a backlight, and when the frequency of incident photons is matched with the overall vibration frequency of electrons in the material of the nanoparticles or the enhancement layer, electrons in the nanoparticles or metal can strongly absorb the energy of the photons, so that localized Surface Plasmon Resonance occurs. The plasma, after absorbing the photon energy of the backlight, emits in the form of rayleigh scattering. The energy of the emitted light can be transferred to the light conversion layer 103 within a certain distance, so that the light rays not converted by the light conversion layer 103 enter the light conversion layer 103 again. Therefore, after SPR occurs, absorption of unconverted backlight can be enhanced, and the emission efficiency of light with target wavelength can be improved.

The material used for the reinforcing layer 105 is a metal material or a metal composite material. When the metal material is in direct contact with the light conversion layer 103, energy transfer occurs, so that the light conversion layer 103 cannot perform light conversion. For example, when Ag is used for the enhancement layer 105 and a quantum dot material is used for the light conversion layer 103, the quantum dot material is in direct contact with Ag, energy transfer occurs, and the quantum dot is quenched. Therefore, the protective layer 104 between the enhancement layer 105 and the light conversion layer 103 can play a role of blocking, so as to ensure that the light conversion layer 103 is not quenched due to energy transfer, and avoid influencing light conversion.

Wherein the thickness of the protective layer 104 is 1nm to 50 nm. Specifically, the thickness of the protective layer 104 is 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, or 50 nm. If the thickness of the protective layer 104 is less than 1nm, the barrier effect is too weak to ensure. If the thickness of the protective layer 104 is larger than 50nm, the distance between the reinforcing layer 105 and the light conversion layer 103 is too far, and surface plasmon resonance is less likely to occur. Alternatively, even if surface plasmon resonance occurs, photon energy generated by the resonance is not conducted to the light conversion layer 103, and it is difficult to achieve a reinforcing effect.

Specifically, the thickness of the reinforcing layer 105 is 1nm to 50 nm. If the reinforcing layer 105 is provided as nanoparticles, the particle size of the nanoparticles is 20nm to 50 nm. The thickness of the enhancement layer 105 is 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, or 50 nm. Specifically, the particle size of the nanoparticle is 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50 nm.

As the thickness of the reinforcing layer 105 is increased, surface plasmon resonance with light having a long wavelength is more likely to occur. Conversely, the smaller the thickness of the reinforcing layer 105, the more likely surface plasmon resonance with light having a shorter wavelength occurs. Similarly, when the reinforcing layer 105 is made of nanoparticles, the larger the particle size of the nanoparticles is, the more likely the surface plasmon resonance with light having a longer wavelength occurs. The smaller the particle size of the nanoparticles, the more likely the surface plasmon resonance with light of a shorter wavelength band occurs. Therefore, the light conversion efficiency can be improved by selectively forming the reinforcing layer 105 with different thicknesses or the nano-particles with different particle sizes according to the light wavelength of the backlight.

Here, the enhancement layer 105 is used to improve the light conversion efficiency, and therefore, the enhancement layer 105 also only needs to be disposed corresponding to the light conversion layer 103. On the first color resist unit 102a, the light conversion layer 103 is not provided. The first color resist unit 102a may not have the enhancement layer 105, which is beneficial to improve the transmittance of the backlight corresponding to the first color resist unit 102 a.

Correspondingly, the application also provides a display panel. Referring to fig. 2, fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure. The display panel 100 includes a color filter substrate 10 and an array substrate 20. The color filter substrate 10 is the color filter substrate 10 described above. The array substrate 20 is disposed opposite to the color filter substrate 10.

The array substrate 20 is provided with a substrate 201 and a pixel driving circuit 202. The pixel driving circuit 202 is disposed corresponding to the area 102c where the blue sub-color resist 1021, the red sub-color resist 1022 and the green sub-color resist 1023 contact and partially overlap.

The display panel 100 provided by the present application performs shading through the mutually contacted and partially overlapped region 102c of the blue sub-color resist 1021, the red sub-color resist 1022 and the green sub-color resist 1023, and the overlapped color resist 102 has lower light transmittance, so as to achieve the effects of light leakage prevention and color mixing prevention, and reduce the crosstalk between the light emitting pixels of various colors. Thus, in the display panel 100 of the present application, a Black Matrix (BM) is not required to be provided, and the pixel aperture ratio is increased.

In addition, the material used for the black matrix generally contains carbon element. Therefore, the resistivity of the black matrix is low, which increases the risk of introducing static electricity, and further affects the display effect of the display panel 100. The design of the black matrix is cancelled, and the static risk can be avoided. Moreover, the overlapped color resistance layers 102 are adopted to realize the shading effect of the black matrix, so that the manufacturing process of the black matrix is reduced, and the production cost is reduced.

In addition, in the display panel 100 provided in the present application, the thickness of the first color resistance unit 102a of the color resistance layer 102 is smaller than the thickness of the second color resistance unit 102 b. Therefore, the display panel 100 of the present application forms the light-converting layer 103 by a transfer process, so that the light-converting layer 103 can be selectively transferred onto the second color resist units 102b in the transfer process. In such a transfer method, the light conversion layer 103 does not need to be patterned, and the influence of photolithography on the material of the light conversion layer 103 is reduced, thereby avoiding the influence on the display effect and improving the reliability of the display panel 100.

It is understood that the display panel 100 may also include other devices. Other devices and their assembly in the display panel 100 are well known to those skilled in the art and will not be described herein.

Correspondingly, the application also provides a manufacturing method of the color film substrate. Referring to fig. 3 to fig. 4e, fig. 3 is a flowchart illustrating a first step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure. Fig. 4a to 4e are schematic diagrams of a first step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure. The color film substrate manufacturing method provided by the application specifically comprises the following steps:

step 11, providing a light conversion substrate 30, wherein the first substrate comprises a substrate 301 and a light conversion layer 103 which are stacked.

The substrate 301 may be a silicon substrate. The use of silicon material as a substrate is a common technique in the art and will not be described in detail herein.

Wherein, a transfer interface layer 302 is also arranged on the substrate 301. A transfer interface layer 302 is disposed between the light conversion layer 103 and the substrate 301. Specifically, please refer to fig. 4a, where fig. 4a is a schematic diagram of a step of forming a transfer interface layer in the color filter substrate manufacturing method provided in the present application. The transfer interface layer 302 may be disposed on the substrate 301 by a coating method, such as spin coating (hereinafter, simply referred to as spin coating), slit coating, or electrostatic spraying.

The spin coating is described below as an example. Firstly, the atomized material of the transfer interface layer 302 is uniformly sprayed on the substrate 301, then the substrate 301 is driven to rotate to make the material of the transfer interface layer 302 on the substrate 301 form a film layer, and the rotation of the substrate 301 is stopped after the material distribution of the transfer interface layer 302 is stable to obtain the transfer interface layer 302. The spin coating process can improve the thickness uniformity of the transfer interface layer 302, facilitate flexible control of the film forming state of the transfer interface layer 302 during the process, and facilitate control of the precision. Optionally, one step of spraying is added before spin coating, a thin liquid film layer of the transfer interface layer 302 can be formed on the surface of the substrate 301, so that the fluidity of the transfer interface layer 302 material on the surface of the substrate 301 during spin coating is improved, the motor speed requirement is reduced, the spin coating efficiency is improved, and the utilization rate of the transfer interface layer 302 material is improved.

The material used for the transfer interface layer 302 may be Octadecyltrichlorosilane (ODTS). The ODTS can perform surface modification on the substrate 301, reduce the adhesion between the light conversion layer 103 and the substrate 301, and facilitate the transfer.

The light conversion layer 103 may be made of quantum dot material. Specifically, a red quantum dot material and a green quantum dot material are mixed and dispersed in a low-boiling-point alkane solvent to obtain a red-green quantum dot solution. Next, referring to fig. 4b, fig. 4b is a schematic diagram of a step of forming the light conversion layer 103 in the color film substrate manufacturing method provided in the present application. A red and green quantum dot solution is spin coated on the side of the transfer interface layer 302 away from the substrate 301. The specific operation method of spin coating is as described in step 12, and is not described herein again. Wherein the low-boiling-point alkane solvent is one or a combination of n-hexane, n-pentane and n-octane.

Step 12, providing a substrate 101, and forming a color resist layer 102 on the substrate 101. The color resist layer 102 includes a plurality of first color resist units 102a and a plurality of second color resist units 102 b. The thickness of the first color resistance unit 102a is smaller than that of the second color resistance unit 102 b.

Specifically, please refer to fig. 4c, where fig. 4c is a schematic diagram of a step of forming a color resist layer in the color filter substrate manufacturing method provided in the present application. Specifically, when forming the color resist layer 102, one first color resist unit 102a may be formed on the substrate 101 first. The boundary of the first color resistance unit 102a is then used as the starting position for the subsequent preparation of the color resistance unit. Specifically, when the first color resist unit 102a is formed, the first color resist unit 102a having a sharp slope may be formed by controlling the exposure amount of the photolithography process. Subsequently, a second color resist unit 102b is formed at a position adjacent to the first color resist unit 102 a. Thus, the side wall of the second color resistance unit 102b is formed to be in contact with the side wall of the first color resistance unit at the slope.

Optionally, a blue sub-color resist 1021, a red sub-color resist 1022, and a green sub-color resist 1023 are formed on the substrate 101. The blue resist sub-layer 1021, the red resist sub-layer 1022 and the green resist sub-layer 1023 can be formed by a patterning process such as exposure and development. That is, a color resist layer having a corresponding color is first formed on the substrate 101, and then a plurality of blue sub-color resist layers 1021 arranged in parallel are formed at a time through a process of exposure, development, or the like. Since both sidewalls of the blue sub-color resist layer 1021 are sloped, the sidewalls of the red sub-color resist layer 1022 formed adjacent thereto are also sloped. Similarly, the sidewall of the green sub-resist 1023 formed next to the blue 1021 and red 1022 resists is also beveled.

It is to be understood that the above description is made in the order of forming the blue sub color resist 1021, the red sub color resist 1022, and the green sub color resist 1023. In fact, the color resist layers 102 in this application can also be sequentially fabricated in other orders. For example, the blue sub-resist 1021, the green sub-resist 1023, and the red sub-resist 1022 are fabricated in this order, which is not limited in this application.

Step 13, transferring the light conversion layer 103 to the side of the second color resist unit 102b away from the substrate 101.

The transferring of the light conversion layer 103 to the side of the second color resistance unit 102b away from the substrate 101 specifically includes the following steps:

step 131, the second color resist unit 102b is contacted with the light conversion layer 103.

Step 132, heating the second color resistance unit 102b and the light conversion layer 103 to a set temperature for a set duration; the set temperature is between 50 ℃ and 100 ℃ and the set time period is between 10 minutes and 60 minutes.

When the second color resistance unit 102b is in contact with the light conversion layer 103, the contact temperature is between 50 ℃ and 100 ℃, and the contact time is between 10 minutes and 60 minutes. Specifically, please refer to fig. 4d, where fig. 4d is a schematic diagram of a step of transfer printing in the color film substrate manufacturing method provided in the present application. First, the substrate 301 provided with the light conversion layer 103 may be transferred into a chamber having a temperature of 50 to 100 ℃. Then, the second color resist units 102b on the substrate 101 are brought into contact with the light conversion layer 103. After a duration of 10 to 60 minutes, the temperature in the chamber was cooled to room temperature. Of course, the second color resist 102b and the light conversion layer 103 may be directly heated.

Specifically, the contact temperature may be 50 ℃, 55 ℃, 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃, 90 ℃, 95 ℃ or 100 ℃. The contact time may be 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, 45 minutes, 50 minutes, or 60 minutes. The transfer printing is performed in a heating environment, so that the interface adhesion between the second color resist unit 102b and the light conversion layer 103 can be increased, the transfer printing effect can be improved, the time required by the transfer printing can be reduced, and the process progress can be accelerated. The contact temperature is controlled to 50 to 100 ℃, so that the light conversion layer 103 can be in perfect contact with the second color resist units 102b without damaging the characteristics of the material of the light conversion layer 103.

Step 133, peeling off the substrate 301 and the light conversion layer 103 corresponding to the first color resist unit 102 a.

Specifically, please refer to fig. 4e, where fig. 4e is a schematic diagram of a step of stripping the substrate in the color filter substrate manufacturing method provided in the present application. The substrate 301 and the light-converting layer 103 corresponding to the first color resist unit 102a are rapidly peeled off at room temperature, so that the light-converting layer 103 is transferred to the side of the color resist layer 102 away from the substrate 101.

After the transfer interface layer 302 is provided on the substrate 301, the interface adhesion between the light conversion layer 103 and the transfer interface layer 302 is reduced. Therefore, the interface adhesion between the light conversion layer 103 and the transfer interface layer 302 is smaller than the interface adhesion between the light conversion layer 103 and the color resist layer 102. When the color resist layer 102 is peeled off, the entire light conversion layer 103 in contact with the color resist layer 102 can be transferred onto the color resist layer 102. Further, since the thickness of the first color resist unit 102a is smaller than that of the second color resist unit 102b, the light conversion layer 103 does not contact the first color resist unit 102a during transfer, and thus the light conversion layer 103 can be selectively transferred onto the second color resist unit 102 b.

Referring to fig. 5 to fig. 6e, fig. 5 is a flowchart illustrating a second step of a method for manufacturing a color filter substrate according to an embodiment of the present disclosure. Fig. 6a to fig. 6e are schematic diagrams illustrating a second step of the color filter substrate manufacturing method according to the embodiment of the present application. The present embodiment is different from the previous embodiment in that, after transferring the light conversion layer 103 to the side of the second color resist unit 102b away from the substrate 101, the following steps are further included:

step 14, forming a protective layer 104 on the side of the light conversion layer 103 away from the substrate 101.

Specifically, please refer to fig. 6a, where fig. 6a is a schematic diagram of a step of forming a protection layer in the color filter substrate manufacturing method provided in the present application. The protective layer 104 is provided on the side of the light conversion layer 103 away from the substrate 101, and a low-temperature evaporation method can be used. The material of the protective layer 104 is evaporated or sublimated into gaseous particles, the gaseous particles are conveyed to the side of the light conversion layer 103 far away from the substrate 101, the gaseous particles are attached to the surface of the side of the light conversion layer 103 far away from the substrate 101 to form nuclei and grow into a solid film, and then atoms of the solid film are reconstructed or chemically bonded to form the protective layer 104. The evaporation method is simple, and the film purity and compactness of the film are high. The low temperature evaporation method can perform evaporation at a temperature of 150 ℃ or lower, and can avoid thermal damage to the light conversion layer 103, thereby avoiding influence on the light emitting efficiency. Specifically, the low-temperature evaporation temperature is 90 ℃, 100 ℃, 120 ℃ or 150 ℃.

Since the high temperature process easily affects the light conversion performance of the light conversion layer 103 material, the passivation layer 104 is formed by low temperature evaporation. When the low-temperature evaporation temperature is less than 100 ℃, the evaporation time is set to be 10 to 30 minutes; when the temperature of the low-temperature evaporation is selected to be 100 ℃ to 150 ℃, the evaporation time is set to be 5 to 10 minutes. This ensures the evaporation effect and reduces thermal damage to the photoconversion layer 103.

Step 15, forming an enhancement layer 105 on the side of the protective layer 104 away from the substrate 101, where the enhancement layer 105 is disposed corresponding to the second color resist unit 102 b.

Specifically, please refer to fig. 6b, where fig. 6b is a schematic diagram of a step of forming an enhancement layer in the color filter substrate manufacturing method provided in the present application. The enhancement layer 105 is disposed on the side of the protection layer 104 away from the light conversion layer 103, and an evaporation method can be used, and the specific evaporation process is the same as that in step 16, except that the evaporation in this step can be performed at a normal evaporation temperature, and low-temperature evaporation is not required. This is because the protective layer 104 is already provided in the light conversion layer 103 and the reinforcing layer 105. In the process of depositing the enhancement layer 105, the protective layer 104 can protect the photoconversion layer 103, and thus low-temperature deposition is not required, and the material properties of the photoconversion layer 103 are not affected.

When the enhancement layer 105 is nanoparticles, the nanoparticles may be dispersed in a solvent and applied to the side of the protection layer 104 away from the light conversion layer 103. The solvent is then evaporated, resulting in a reinforcing layer 105 of nanoparticles. Alternatively, nanoparticles are dispersed in a resin material, coated on the side of the protective layer 104 away from the light conversion layer 103, and then the resin material is cured, so as to obtain the reinforcing layer 105 formed of nanoparticles. Wherein, the solvent can be one or the combination of more of n-hexane, n-pentane and n-octane. The resin material may be one or a combination of phenolic resin, polyvinyl chloride resin and epoxy resin.

The enhancement layer 105 is disposed corresponding to the second color resist unit 102b, and the enhancement layer 105 may be patterned by using a photolithography process. Specifically, please refer to fig. 6c, where fig. 6c is a schematic diagram of a step of coating a photoresist on an enhancement layer and performing exposure in the color filter substrate manufacturing method provided in the present application. A photoresist is coated on the side of the enhancement layer 105 away from the protection layer 104, and then the photoresist is planarized and thermally cured to obtain a photoresist layer 106. Then, a mask plate 107 is provided over the photoresist layer 106, and light irradiation processing is performed over the mask plate 107, and exposure processing is performed on the photoresist layer 106 not covered with the mask plate 107. The arrows in the figure indicate light rays. In the present embodiment, a positive photoresist is taken as an example for explanation. After exposure, the irradiated portion of the photoresist layer 106 is dissociated into small molecules, forming a structure that is easily soluble in the developer.

Next, please refer to fig. 6d, where fig. 6d is a schematic diagram of a step of performing a developing process on the photoresist layer in the color filter substrate manufacturing method provided in the present application. The photoresist layer 106 is developed to remove the exposed portion of the photoresist layer 106, so as to expose the enhancement layer 105 corresponding to the first color resist unit 102a on the photoresist layer 106.

The developing treatment is to dissolve a soluble region of the photoresist by exposure with a chemical developer. The chemical developer may use one or more of Tetramethylammonium Hydroxide (TMAH), n-Butyl Acetate (nBA) and toluene. The developing solution may also be other solvents that can dissolve the photoresist material after exposure.

Referring to fig. 6e, fig. 6e is a schematic diagram illustrating a step of patterning an enhancement layer in the color film substrate manufacturing method provided in the present application. After exposing the enhancement layer 105 corresponding to the first color resist unit 102a, the enhancement layer 105 corresponding to the first color resist unit 102a is etched and the photoresist layer 106 is removed.

The enhancement layer 105 may be patterned by wet etching or dry etching. Specifically, chemical etching, electrolytic etching, ion beam sputter etching, plasma etching, reactive particle etching, or the like may be employed.

Here, the enhancement layer 105 is for improving the light conversion efficiency, and therefore the enhancement layer 105 only needs to be disposed corresponding to the light conversion layer 103. On the first color resist unit 102a, the light conversion layer 103 is not provided. The first color resist unit 102a may not be provided with the enhancement layer 105. The enhancement layer 105 corresponding to the first color resist unit 102a is etched away, which is beneficial to improving the transmittance of the backlight.

Optionally, after the above steps, the color film substrate 10 and the backlight module may be aligned to obtain the display device. The alignment and the process of the backlight module are well known to those skilled in the art and will not be described herein.

The application provides a manufacturing method of a color film substrate, which realizes selective light conversion layer 103 transfer printing by performing differential design on color resistance units with different colors in a color resistance layer 102. Specifically, the color resist layer 102 is provided with a first color resist unit 102a and a second color resist unit 102 b. The thickness of the first color resist unit 102a is smaller than that of the second color resist unit 102b, so that only the second color resist unit 102b is in contact with the light conversion layer 103 during transfer, and the light conversion layer 103 is selectively transferred onto the second color resist unit 102 b. The manufacturing method of the color film substrate can omit patterning treatment on the light conversion layer 103, avoid influence on the light conversion layer 103 material during patterning treatment, weaken the light conversion efficiency of the light conversion layer, and further avoid influence on the light emitting effect.

The color film substrate, the display panel and the manufacturing method of the color film substrate provided by the present application are introduced in detail above, and specific examples are applied herein to explain the principle and the implementation of the present application, and the description of the above embodiments is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.