阅读说明：本技术 一种基于中等介电常数车削膜制备复合介质板的工艺 (Process for preparing composite dielectric plate based on medium dielectric constant turning film ) 是由 庞子博 高枢健 张伟 *** 王丽婧 于 2019-11-01 设计创作，主要内容包括：本发明公开了一种基于中等介电常数车削膜制备复合介质板的工艺。该工艺为：将幅面尺寸相同的、体积分数为64.5-80.0%的中等介电常数含陶瓷粉的聚四氟乙烯树脂车削膜与体积分数为20.0-35.5%的含聚四氟乙烯的玻纤布浸渍片按上下对称结构层叠排布成多层介质层；在多层介质层上下表面各覆盖一张铜箔；采用温度为370-390℃、压强6-16MPa、热压时间2-4h的热压烧结过程,使聚四氟乙烯树脂发生熔融粘接并最终定形,制备出介电常数为2.75-3.65的复合介质板。该板具有介电常数适中、介质损耗小、热膨胀系数较低等特点,可耐受酸碱腐蚀和冷热冲击等极端环境条件,可广泛应用于通信等相关领域。(The invention discloses a process for preparing a composite dielectric slab based on a medium dielectric constant turning film. The process comprises the following steps: laminating and arranging a polytetrafluoroethylene resin turning film with medium dielectric constant and containing ceramic powder, the size of the film is the same, the volume fraction of the film is 64.5-80.0%, and a polytetrafluoroethylene-containing fiberglass cloth impregnated sheet with the volume fraction of 20.0-35.5% according to an up-down symmetrical structure to form a plurality of dielectric layers; covering a copper foil on each of the upper and lower surfaces of the multilayer dielectric layer; the hot-pressing sintering process with the temperature of 370-390 ℃, the pressure of 6-16MPa and the hot-pressing time of 2-4h is adopted to lead the polytetrafluoroethylene resin to be melted, bonded and finally shaped, thus preparing the composite dielectric plate with the dielectric constant of 2.75-3.65. The plate has the characteristics of moderate dielectric constant, small dielectric loss, low thermal expansion coefficient and the like, can resist acid-base corrosion, cold and hot impact and other extreme environmental conditions, and can be widely applied to related fields of communication and the like.)

1. A process for preparing a composite dielectric slab based on a medium dielectric constant turning film is characterized by comprising the following steps: the preparation process of the composite dielectric plate comprises the following steps:

step one, laminating and arranging a polytetrafluoroethylene resin turning film with medium dielectric constant and containing ceramic powder, the size of the film is the same, the volume fraction of the film is 64.5-80.0%, and a glass fiber cloth impregnated sheet with the volume fraction of 20.0-35.5% and containing polytetrafluoroethylene into a plurality of dielectric layers according to an up-down symmetrical structure;

covering a low-profile-factor copper foil with the same breadth dimension on the upper surface and the lower surface of the laminated multi-layer dielectric layer respectively, wherein the side with larger profile factor of the copper foil faces the dielectric layer;

and step three, adopting a hot-pressing sintering process with the temperature of 370-390 ℃, the pressure of 6-16MPa and the hot-pressing time of 2-4h to melt, bond and finally shape the polytetrafluoroethylene resin, and preparing the composite dielectric plate with the dielectric constant of 2.75-3.65.

2. The process for preparing the composite dielectric slab based on the medium dielectric constant turning film according to claim 1, wherein the ceramic powder contained in the polytetrafluoroethylene resin turning film is silicon dioxide, or silicon dioxide and titanium dioxide, or silicon dioxide and calcium titanate, the ceramic powder accounts for 40 ~ 55% of the total mass fraction of the polytetrafluoroethylene resin turning film, and the average particle size is 5-15 μm.

3. The process of claim 1, wherein the process comprises the steps of: the glass fiber cloth impregnated sheet adopts electronic grade glass fiber cloth.

4. The process of claim 1, wherein the process comprises the steps of: the nominal thickness of the low-profile-factor copper foil is 18 mu m or 35 mu m, and the profile factor of the side with larger profile factor is less than or equal to 8 mu m.

Technical Field

The invention relates to a preparation method of a composite dielectric plate, in particular to a process for preparing the composite dielectric plate based on a medium dielectric constant turning film, and specifically relates to a process for preparing the composite dielectric plate based on a medium dielectric constant Polytetrafluoroethylene (PTFE) resin turning film containing ceramic powder.

Background

With the rapid development of the integrated circuit field, the composite dielectric substrate plays a fundamental role in realizing miniaturization and high frequency of products, and the performance of the composite dielectric substrate often determines the design work of the circuit. Composite dielectric plates with medium and low dielectric constants have wide application in the high frequency field. The silicon dioxide ceramic powder has a low dielectric constant (less than 4), and is very suitable for modulating the dielectric property, the mechanical property and the thermal property of the dielectric layer of the composite board. Titanium dioxide and calcium titanate have higher dielectric constants, and can be used for adjusting the formula of the dielectric layer to obtain a medium dielectric constant. Generally, the doping of ceramic powder such as silicon dioxide in the dielectric layer of the composite board has important functions of reducing the thermal expansion coefficient of the board, improving the thermal conductivity and the like. The polytetrafluoroethylene has extremely low dielectric constant (about 2.1) and ultralow dielectric loss (10)^-4About magnitude order) is the first choice resin material for preparing medium and low dielectric constant composite dielectric plate materials, and the application is very wide.

Disclosure of Invention

The invention aims to provide a process for preparing a composite dielectric plate based on a medium dielectric constant turning film. The method comprises the steps of stacking and arranging a polytetrafluoroethylene resin turning film containing ceramic powder such as silicon dioxide, titanium dioxide, calcium titanate and the like with a medium dielectric constant and a glass fiber cloth impregnated sheet containing polytetrafluoroethylene according to a certain proportion and a symmetrical structure, covering low-profile-factor copper foils on the upper surface and the lower surface, and then fusing and bonding fluorine-containing resin through a hot-pressing sintering process to finally shape. The composite dielectric plate with the dielectric constant of 2.75-3.65 is successfully prepared by adopting the process.

The invention is realized by the following technical scheme: the method is characterized in that: the preparation process of the composite dielectric plate comprises the following steps:

step one, laminating and arranging a polytetrafluoroethylene resin turning film with medium dielectric constant and containing ceramic powder, the size of which is the same, the volume fraction of which is 64.5-80.0%, and a glass fiber cloth impregnated sheet with the volume fraction of which is 20.0-35.5% containing polytetrafluoroethylene into a plurality of dielectric layers according to an up-and-down symmetrical structure.

And step two, respectively covering a piece of low-profile-factor copper foil with the same breadth dimension on the upper surface and the lower surface of the laminated multi-layer dielectric layer, wherein the side with the larger profile factor of the copper foil faces the dielectric layer.

And step three, adopting a hot-pressing sintering process with the temperature of 370-390 ℃, the pressure of 6-16MPa and the hot-pressing time of 2-4h to melt, bond and finally shape the polytetrafluoroethylene resin, and preparing the composite dielectric plate with the dielectric constant of 2.75-3.65.

The ceramic powder contained in the polytetrafluoroethylene resin turning film is silicon dioxide, or silicon dioxide and titanium dioxide, or silicon dioxide and calcium titanate, the sum of the mass fractions of the ceramic powder and the polytetrafluoroethylene resin turning film is 40 ~ 55%, and the average particle size is 5-15 μm.

The glass fiber cloth impregnated sheet adopts electronic-grade glass fiber cloth.

The nominal thickness of the low-profile-factor copper foil is 18 mu m or 35 mu m, and the profile factor of the side with larger profile factor is less than or equal to 8 mu m.

The beneficial effects produced by the invention are as follows: the invention can adopt widely-sold raw materials, and prepare the novel medium dielectric plate with medium dielectric constant (2.75-3.65) under the conditions of high temperature and high pressure through the reasonable design of the formula and the laminated structure of the medium dielectric plate. The composite dielectric plate has the characteristics of moderate dielectric constant, small dielectric loss, low thermal expansion coefficient and the like, can resist acid-base corrosion, cold and hot impact and other extreme environmental conditions, and can be widely applied to related fields such as communication and the like.

Detailed Description

The invention is further illustrated by the following examples:

the PTFE resin lathe membrane used in the process can have average thickness of 25 μm, 50 μm and 100 μm without limitation.

The glass fiber cloth in the glass fiber cloth impregnated sheet adopted by the process is electronic grade glass fiber cloth, and the glass fiber cloth can be, but is not limited to be, 1037, 104, 106 and 1080 types.