Semiconductor structure and manufacturing method thereof
阅读说明:本技术 半导体结构及其制作方法 (Semiconductor structure and manufacturing method thereof ) 是由 叶柏良 吴振中 邓德彰 张家铭 于 2019-10-18 设计创作,主要内容包括:一种半导体结构及其制作方法,其中半导体结构配置于基板上,包括第一金属层设置于基板上、栅绝缘层设置于基板上、氧化物半导体层设置于栅绝缘层上、蚀刻阻挡图案设置于氧化物半导体层上以及第二金属层设置于蚀刻阻挡图案上。第一金属层包括栅极线。栅绝缘层覆盖栅极线。氧化物半导体层的图案化定义出氧化物半导体图案。第二金属层包括源极与漏极电性连接至氧化物半导体图案。部分蚀刻阻挡图案位于第二金属层与氧化物半导体层之间。第二金属层还包括信号线设置于蚀刻阻挡图案上并电性连接氧化物半导体图案。一种半导体结构的制作方法亦被提出。(A semiconductor structure and a manufacturing method thereof are provided, wherein the semiconductor structure is arranged on a substrate and comprises a first metal layer arranged on the substrate, a gate insulating layer arranged on the substrate, an oxide semiconductor layer arranged on the gate insulating layer, an etching barrier pattern arranged on the oxide semiconductor layer and a second metal layer arranged on the etching barrier pattern. The first metal layer includes a gate line. The gate insulating layer covers the gate line. The patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer comprises a source electrode and a drain electrode which are electrically connected to the oxide semiconductor pattern. The partial etching barrier pattern is positioned between the second metal layer and the oxide semiconductor layer. The second metal layer further comprises a signal line arranged on the etching barrier pattern and electrically connected with the oxide semiconductor pattern. A method for fabricating a semiconductor structure is also provided.)
1. A method for fabricating a semiconductor structure, comprising:
providing a substrate;
forming a first metal layer on the substrate and patterning the first metal layer to define a gate line and a shielding metal pattern, wherein the gate line is electrically connected with a gate;
forming a gate insulating layer on the substrate and covering the gate line and the shielding metal pattern;
forming an oxide semiconductor material layer on the gate insulating layer;
annealing the oxide semiconductor material layer;
forming an etch stop material layer on the oxide semiconductor material layer;
forming a photoresist material layer on the etching barrier material layer;
defining the photoresist material layer by using a half-tone mask to form a photoresist pattern;
patterning the etch stop material layer using the photoresist pattern as a mask to form an etch stop pattern;
patterning the oxide semiconductor material layer by using the photoresist pattern as a mask to form an oxide semiconductor layer and define a first opening, wherein the first opening overlaps the gate insulating layer;
performing an ashing process to remove the photoresist pattern;
patterning the gate insulating layer by using the etching barrier pattern as a mask to form a first contact window overlapping the shielding metal pattern, wherein an orthographic projection of the first contact window on the substrate is located within an orthographic projection of the first opening on the substrate;
forming a second metal layer on the etching barrier pattern and patterning the second metal layer to define a source electrode, a drain electrode, a signal line and a data line, wherein part of the etching barrier pattern is located between the second metal layer and the oxide semiconductor layer, and the data line is electrically connected to the shielding metal pattern through the first contact window; and
the oxide semiconductor layer is patterned to define an oxide semiconductor pattern, and the source electrode, the drain electrode and the signal line are electrically connected to the oxide semiconductor pattern.
2. The method of fabricating a semiconductor structure according to claim 1, further comprising:
forming a first planarization layer on the etching barrier pattern, covering a part of the gate insulating layer, the etching barrier pattern and the second metal layer, wherein the first planarization layer has a second contact window;
forming a color resistance layer on the first flat layer, wherein the color resistance layer is provided with a second opening overlapping the second contact window, and the orthographic projection of the second contact window on the substrate is positioned in the orthographic projection of the second opening on the substrate;
forming a second flat layer on the color resistance layer, wherein the second flat layer is provided with a third opening overlapping the second contact window; and
and forming a pixel electrode on the second flat layer, wherein the pixel electrode is electrically connected to the drain electrode through the second contact window.
3. The method according to claim 1, wherein the oxide semiconductor material layer comprises a stack of one or more selected from indium gallium zinc oxide, indium gallium oxide, and indium tin zinc oxide.
4. The method according to claim 1, wherein the etch stop material layer comprises hafnium oxide, silicon oxide or aluminum oxide.
5. The method according to claim 1, further comprising performing an electrical test to inspect the source, the drain and the signal line after the step of defining the oxide semiconductor pattern.
6. A semiconductor structure disposed on a substrate, comprising:
a first metal layer disposed on the substrate, the first metal layer including a gate line electrically connected to a gate electrode;
a gate insulating layer disposed on the substrate and covering the gate line, the gate insulating layer having a first contact window overlapping the first metal layer;
an oxide semiconductor layer disposed on the gate insulating layer, the oxide semiconductor layer having a first opening, and an oxide semiconductor pattern defined by patterning the oxide semiconductor layer;
an etch stop pattern disposed on the oxide semiconductor layer and on a portion of the oxide semiconductor pattern; and
a second metal layer disposed on the etching barrier pattern, the second metal layer including a source and a drain electrically connected to the oxide semiconductor pattern, and a portion of the etching barrier pattern being between the second metal layer and the oxide semiconductor layer,
the second metal layer also includes a signal line disposed on the etching barrier pattern and electrically connected to the oxide semiconductor pattern, and the second metal layer is electrically connected to the first metal layer through the first contact hole.
7. The semiconductor structure of claim 6, wherein the first metal layer further comprises a shielding metal pattern, the second metal layer further comprises a data line, and the etching stop pattern and the oxide semiconductor layer are sandwiched between the data line and the shielding metal pattern.
8. The semiconductor structure of claim 7, wherein the data line is electrically connected to the shielding metal pattern through the first contact via, and an orthogonal projection of the first contact via on the substrate is located within an orthogonal projection of the first opening on the substrate.
9. The semiconductor structure of claim 6, further comprising:
a first flat layer disposed on the etching barrier pattern and covering a part of the gate insulating layer, the etching barrier pattern, and the second metal layer, the first flat layer having a second contact window;
a color resistance layer arranged on the first flat layer, the color resistance layer having a second opening overlapping the second contact window;
a second flat layer disposed on the color resistance layer, the second flat layer having a third opening overlapping the second contact window; and
a pixel electrode disposed on the second planarization layer and electrically connected to the drain electrode through the second contact window.
10. The semiconductor structure of claim 6, wherein a short side of an orthographic projection of said oxide semiconductor pattern on said substrate is parallel to a long side of an orthographic projection of said signal line overlapping said oxide semiconductor pattern on said substrate, and a distance between said short side and said long side is 0.5 to 1 μm.
11. The semiconductor structure of claim 6, wherein the other short side of the orthographic projection of the oxide semiconductor pattern on the substrate is parallel to one long side of the orthographic projection of the source electrode on the substrate, and the distance between the other short side and the long side is 0.5 microns to 1 micron.
Technical Field
The present invention relates to a semiconductor structure and a method for fabricating the same, and more particularly, to a semiconductor structure including an etch stop pattern and a method for fabricating the same.
Background
With the advancement of modern information technology, displays of various specifications have been widely used in screens of consumer electronic products. In the market trend, the process of fabricating high-quality Liquid Crystal Displays (LCDs) and Organic electroluminescent displays (OELDs or OLEDs) includes arranging an array of semiconductor devices including Thin Film Transistors (TFTs) and pixel structures on a substrate.
In general, a metal oxide semiconductor layer is used for a thin film transistor of a high-definition display. A metal Oxide semiconductor layer (e.g., Indium Gallium Zinc Oxide (IGZO)) generates carriers (electrons) due to oxygen vacancy, and thus is in an on state, and a threshold voltage (Vt) is generally negative, which may cause a leakage current problem. Therefore, the conventional process method cannot perform the open-circuit and short-circuit test and the wire repair procedure after the source and drain electrodes and other signal wires connected to the metal oxide semiconductor layer are manufactured in the same layer. Therefore, how to develop a semiconductor structure with excellent electrical characteristics and convenient inspection and repair processes is one of the goals that developers want to achieve.
Disclosure of Invention
The invention provides a semiconductor structure and a manufacturing method thereof, which are suitable for conveniently carrying out detection and repair procedures, have excellent electrical property, and can reduce the number of masks and reduce the cost.
The manufacturing method of the semiconductor structure comprises the following steps. A substrate is provided. A first metal layer is formed on the substrate and patterned to define a gate line and a shielding metal pattern. A gate insulating layer is formed on the substrate and covers the gate line and the shielding metal pattern. And forming an oxide semiconductor material layer on the gate insulating layer. And annealing the oxide semiconductor material layer. Forming an etching barrier material layer on the oxide semiconductor material layer. A photoresist material layer is formed on the etching barrier material layer. The photoresist material layer is defined by a half tone mask to form a photoresist pattern. The etch barrier material layer is patterned using the photoresist pattern as a mask to form an etch barrier pattern. The oxide semiconductor material layer is patterned by using the photoresist pattern as a mask to form an oxide semiconductor layer and define a first opening, and the first opening overlaps the gate insulating layer. An ashing process is performed to remove the photoresist pattern. The gate insulating layer is patterned by etching the barrier pattern as a mask to form a first contact hole, and the first contact hole overlaps and shields the metal pattern, wherein an orthographic projection of the first contact hole on the substrate is positioned in an orthographic projection of the first opening on the substrate. Forming a second metal layer on the etching barrier pattern and patterning the second metal layer to define a source electrode, a drain electrode, a signal line and a data line. The partial etching blocking pattern is positioned between the second metal layer and the oxide semiconductor material layer, and the data line is electrically connected to the shielding metal pattern through the first contact window. And patterning the oxide semiconductor layer to define an oxide semiconductor pattern. The source and drain electrodes and the signal line are electrically connected to the oxide semiconductor pattern.
The semiconductor structure of the invention is configured on the substrate, and comprises a first metal layer arranged on the substrate and comprising a gate line electrically connected to the gate electrode, a gate insulating layer arranged on the substrate and covering the gate line, an oxide semiconductor layer arranged on the gate insulating layer and having a first opening, an etching barrier pattern arranged on the oxide semiconductor layer and on a part of the oxide semiconductor pattern, and a second metal layer arranged on the etching barrier pattern. The gate insulating layer has a first contact window overlapping the first metal layer. The patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source and a drain electrically connected to the oxide semiconductor pattern, and a portion of the etch barrier pattern is between the second metal layer and the oxide semiconductor. The second metal layer further comprises a signal line arranged on the etching barrier pattern and electrically connected to the oxide semiconductor pattern, and the second metal layer is electrically connected to the first metal layer through the first contact window.
In view of the above, the semiconductor structure and the method for fabricating the same according to the embodiment of the invention can directly dispose the etching barrier pattern having oxygen atoms on the oxide semiconductor layer and/or the oxide semiconductor pattern, so that the etching barrier pattern can provide oxygen atoms to the oxide semiconductor layer and/or the oxide semiconductor pattern, thereby improving the problem of oxygen vacancy. Therefore, the electrical property of the oxide semiconductor pattern is improved, and the oxide semiconductor pattern can have the characteristics of a semiconductor. Thus, the semiconductor structure of the present embodiment can directly perform the open circuit test and the short circuit test after completing the steps of forming the source, the drain and the signal line. Therefore, the method is suitable for conveniently carrying out detection and repair procedures without additionally carrying out opening procedures, and can reduce the risk of wire breakage so as to have excellent electrical property, further shorten the process time and reduce the cost. Further, the etch barrier pattern and the oxide semiconductor layer may be formed through a mask, and the gate insulating layer may be patterned by using the etch barrier pattern as a mask. Therefore, the semiconductor structure and the manufacturing method thereof can reduce the number of masks used and further reduce the manufacturing cost.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a partial top view of a semiconductor structure according to an embodiment of the invention.
FIGS. 2A-2H are schematic cross-sectional views of the process flow of FIG. 1 along the sectional lines A-A 'and B-B'.
Fig. 3A to 3D are schematic cross-sectional views of the manufacturing process of fig. 1 along the section line C-C'.
FIG. 4 is a cross-sectional view taken along section line D-D' of FIG. 1.
Description of reference numerals:
10: semiconductor structure
100: substrate
111: gate line
112: masking metal pattern
112a, 145, DLa: side edge
120: gate insulating layer
140: oxide semiconductor layer
140': oxide semiconductor material layer
141: the other short side
142: oxide semiconductor pattern
143: short side
160: etching barrier pattern
160': layer of etch stop material
180: photoresist pattern
180': layer of photoresist material
182: projection after development
182': convex part
184': concave part
191: a first flat layer
192: a second flat layer
210: signal line
213. Sa: long side
A-A ', B-B', C-C ', D-D': section line
C1, C2: storage capacitor
CF: color resist layer
CH: channel region
COM: common electrode wire
D: drain electrode
DL: data line
G: grid electrode
H1: a first thickness
H2: second thickness
K1, K2, K3: distance between two adjacent plates
M1: a first metal layer
M2: second metal layer
O1: first opening
O2: second opening
O3: third opening
PE: pixel electrode
S: source electrode
T: thin film transistor
V1: first contact window
V2: second contact window
Detailed Description
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, without departing from the spirit or scope of the present invention.
In the drawings, the thickness of various elements and the like are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" or "overlapping" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer," or "portion" discussed below could be termed a second element, component, region, layer, or portion without departing from the teachings herein.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one", unless the content clearly indicates otherwise. "or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions integers, steps, operations, elements, components, and/or groups thereof.
Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
As used herein, "about," "substantially," or "approximately" includes the stated value and the average value within an acceptable range of deviation of the stated value, taking into account the particular number of measurements in question and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat may generally have rough and/or nonlinear features. Further, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
Fig. 1 is a schematic partial top view of a semiconductor structure according to an embodiment of the present invention, and fig. 1 schematically illustrates only some components for convenience of illustration and observation. FIGS. 2A-2H are schematic cross-sectional views of the process flow of FIG. 1 along the sectional lines A-A 'and B-B'. Fig. 3A to 3D are schematic cross-sectional views of the manufacturing process of fig. 1 along the section line C-C'. Referring to fig. 1 and fig. 2H, the
Referring to fig. 1 and 2A, a method for fabricating the
Referring to fig. 2A, a first metal layer M1 is formed on the
Referring to fig. 2B, a
Next, an oxide semiconductor material layer 140' is formed on the
Then, an annealing process (annealing) is performed on the oxide semiconductor material layer 140 'to crystallize the oxide semiconductor material layer 140' to have electrical properties. At this time, the oxide semiconductor material layer 140 'may generate carriers (electrons) due to oxygen vacancies (oxygen vacancies), for example, so that the oxide semiconductor material layer 140' is in an on state.
Next, an etch barrier material layer 160 'is formed on the oxide semiconductor material layer 140'. In the embodiment, the material of the etching stop material layer 160' is, for example, an oxide, including hafnium oxide, silicon oxide, or aluminum oxide, or other suitable materials, but the invention is not limited thereto. In the present embodiment, the forming method of the etching barrier material layer 160' includes, for example, a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method, or other suitable methods, which is not limited in the invention.
It should be noted that since the etching stop material layer 160 'having oxygen atoms can be directly disposed on the oxide semiconductor material layer 140', the etching stop material layer 160 'can be used to provide oxygen atoms to the oxide semiconductor material layer 140' to improve the problem of oxygen vacancy. Therefore, the threshold voltage of the oxide semiconductor material layer 140 'can be a positive value, thereby improving the problem of leakage current and enhancing the electrical property of the oxide semiconductor material layer 140'. Under the above arrangement, the oxide semiconductor material layer 140' may also be in a non-conductive state and have the characteristics of a semiconductor.
Referring to fig. 2C, a photoresist material layer 180 'is then formed on the etch stop material layer 160'. The photoresist material layer 180' may be, for example, a positive photoresist material or a negative photoresist material. This embodiment is exemplified by the photoresist material layer 180' being a positive photoresist material. In other words, the exposed portions of the photoresist material layer 180' will dissolve in the developer. However, the invention is not limited thereto.
Referring to fig. 2C and fig. 2D, next, the photoresist material layer 180 'may be exposed and developed by using a Half Tone Mask (HTM), a phase shift mask (phase shift mask), or a gray tone mask (gray tone mask) as a mask (not shown) to define the photoresist material layer 180'. In detail, as shown in fig. 2C, different portions of the photoresist layer 180' may be exposed to light to different degrees through a half-tone mask (not shown), and then the different portions may be dissolved in a developer through a developing process to define portions with different thicknesses. For example, the photoresist material layer 180 'may include a protrusion 182' and a recess 184 ', and the protrusion 182' and the recess 184 'are continuously disposed on the etch barrier material layer 160'. The thickness of the convex portion 182 'is greater than that of the concave portion 184'. In other words, the first thickness H1 of the convex portion 182 'is greater than the second thickness H2 of the concave portion 184'. As shown in fig. 2C, the first thickness H1 is, for example, twice the second thickness H2, but the invention is not limited thereto. In some embodiments, the first thickness H1 may also be, for example, three, four, or more times the second thickness H2, depending on the needs of the user. In some embodiments, the first thickness H1 is, for example, 2.4 microns, but the invention is not limited thereto.
As shown in fig. 2C and 2D, the photoresist material layer 180 ' is defined by the half tone mask and is developed, so that the concave portions 184 ' of the photoresist material layer 180 ' are removed, and the developed
Referring to fig. 2D and 2E, in the present embodiment, in a direction perpendicular to the
As shown in fig. 2D and 2E, after the step of forming the
Referring to fig. 1, 2E and 2F, an ashing process is performed to remove the
Next, the second metal layer M2 may be patterned to define the source S, the drain D, the
Then, the
Referring to fig. 1 and 2F, in the present embodiment, the thin film transistor T is disposed on the
In the present embodiment, as shown in fig. 1, the data line DL is defined by a metal layer M2. The data lines DL and the
As shown in fig. 1 and fig. 2F, the second metal layer M2 can further define a
In the present embodiment, a distance K1 is provided between the edge of the
In the present embodiment, a distance K2 is provided between the edge of the source S and the edge of the
It should be noted that the embodiment can improve the problem of oxygen vacancy by directly disposing the
Referring to fig. 2G, a
Then, a color resist layer CF is formed on the
In the present embodiment, the color-resist layer CF has a second opening O2, and the second opening O2 overlaps the second contact window V2 and the storage capacitor C2 in a direction perpendicular to the
Next, a
The above description is given by way of example only when the
Referring to fig. 2H, a pixel electrode PE is then formed on the
It is noted that the present embodiment may simultaneously pattern the
Referring to fig. 1, fig. 2A and fig. 3A, in the present embodiment, when the step of defining the
Referring to fig. 1, fig. 2C and fig. 3B, a
Referring to fig. 1, 2D, 3B and 3C, the photoresist material layer 180 ' is then defined by a half-tone mask (not shown) and a developing process is performed to remove portions of the recesses 184 ' in the photoresist material layer 180 ' and leave portions of the developed
Referring to fig. 1, 2F, 3C and 3D, the
In short, under the above configuration, the present embodiment may form the
Next, as shown in fig. 2F and 3D, after the
In the present embodiment, a distance K3 is formed between the edge of the data line DL and the edge of the
With the above arrangement, the probability of generating parasitic capacitance between the data line DL and the shielding
FIG. 4 is a cross-sectional view taken along section line D-D' of FIG. 1. Please refer to fig. 1, fig. 3D and fig. 4. The cross-sectional view of the data line DL shown in fig. 4 is similar to the cross-sectional view of the data line DL shown in fig. 3D, except that the data line DL shown in fig. 4 is not electrically connected to the shielding
In summary, the semiconductor structure and the method for fabricating the same according to the embodiments of the invention can directly dispose the etching barrier pattern having oxygen atoms on the oxide semiconductor layer and/or the oxide semiconductor pattern, so that the etching barrier pattern can provide oxygen atoms to the oxide semiconductor layer and/or the oxide semiconductor pattern, thereby improving the problem of oxygen vacancy. Therefore, the initial voltage of the oxide semiconductor pattern can be a positive value, so that the problem of leakage current can be solved, the electrical property of the oxide semiconductor pattern is improved, and the oxide semiconductor pattern has the characteristics of a semiconductor. Thus, the semiconductor structure of the present embodiment can directly perform the open circuit test and the short circuit test after completing the steps of forming the source, the drain and the signal line. Therefore, the method is suitable for conveniently carrying out detection and repair procedures without additionally carrying out opening procedures, and can reduce the risk of wire breakage so as to have excellent electrical property, further shorten the process time and reduce the cost.
Furthermore, the semiconductor structure and the manufacturing method thereof of the present invention can form the etching barrier pattern and the oxide semiconductor layer through one mask, and pattern the gate insulating layer by using the etching barrier pattern as the mask. Therefore, the present invention can integrate the mask of the existing patterned oxide semiconductor material layer and the mask of the patterned gate insulating layer into the same mask, so as to reduce the number of the used masks and further reduce the manufacturing cost.
In addition, the data line of the semiconductor structure can be electrically connected to the shielding metal layer to increase the area for transmitting signals, reduce the risk of open circuit caused by disconnection, and increase the performance and reliability of the semiconductor structure. In addition, a gate insulating layer, an oxide semiconductor layer and an etching blocking pattern can be clamped between the data line and the shielding metal pattern, so that the probability of generating parasitic capacitance between the data line and the shielding metal layer is further reduced, and the performance of the semiconductor structure is further improved.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
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