阅读说明：本技术 一种igbt芯片及半导体功率模块 (IGBT chip and semiconductor power module ) 是由 左义忠 于 2019-10-31 设计创作，主要内容包括：本发明提供了一种IGBT芯片及半导体功率模块,涉及半导体器件的技术领域,在IGBT芯片的第一表面上设有主工作区域的第一栅电极单元和第一发射极单元,电流检测区域的第二栅电极单元和第二发射极单元,IGBT芯片的第二表面上设有主工作区域的第一集电极单元和电流检测区域的第二集电极单元,接地区域设置于第一发射极单元内的任意位置处；电流检测区域和接地区域用于与测试取样电阻的两端连接,使得测试取样电阻上产生电压,以便根据电压检测主工作区域的工作电流,由于主工作区域的栅电极单元和电流检测区域的栅电极单元不连接,使得电流测量过程中电流检测区域与主工作区域的电流比例关系稳定,提高了电流检测精度和测试敏感性。(The invention provides an IGBT (insulated gate bipolar transistor) chip and a semiconductor power module, and relates to the technical field of semiconductor devices.A first gate electrode unit and a first emitter unit of a main working area are arranged on a first surface of the IGBT chip; the current detection area and the grounding area are used for being connected with two ends of the test sampling resistor, so that voltage is generated on the test sampling resistor, and the working current of the main working area is detected according to the voltage.)

1. An IGBT chip characterized by comprising: a main working area, a current detection area and a grounding area;

the first surface of the IGBT chip is provided with a first gate electrode unit and a first emitter unit of the main working area, the second gate electrode unit and a second emitter unit of the current detection area, and the first gate electrode unit, the first emitter unit, the second gate electrode unit and the second emitter unit are separated through electrode metal etching;

a first collector unit of the main working region and a second collector unit of the current detection region are arranged on the second surface of the IGBT chip, and the first collector unit and the second collector unit are overlapped; wherein the second surface and the first surface are two opposite surfaces on the IGBT chip;

the ground region is disposed at an arbitrary position within the first emitter unit;

the current detection area and the grounding area are respectively used for being connected with a test sampling resistor, so that voltage is generated on the test sampling resistor, and the working current of the main working area is detected according to the voltage.

2. The IGBT chip according to claim 1, wherein the current detection region is placed in an edge region of the main operating region.

3. The IGBT chip according to claim 2, wherein an area of the current detection region is smaller than an area of the main operating region.

4. The IGBT chip according to claim 1, wherein the IGBT chip is a trench structured IGBT chip.

5. The IGBT chip according to claim 1, wherein a plurality of grooves are provided in corresponding positions of the current detection region and the main operating region, respectively, and a groove width of the current detection region is smaller than a groove width of the main operating region.

6. The IGBT chip of claim 5, wherein polysilicon is filled in each of the trenches.

7. The IGBT chip according to claim 1, wherein an N-type withstand voltage drift layer and a conductive layer are further provided between the first surface of the IGBT chip and the second surface of the IGBT chip.

8. The IGBT chip according to claim 7, wherein a terminal protection region is further arranged at the edge of the IGBT chip, wherein the terminal protection region comprises a plurality of P + field limiting rings or P-type diffusion regions arranged on the N-type voltage-resistant drift layer;

and the plurality of P + field limiting rings or the P-type diffusion regions are used for carrying out voltage-resistant protection on the IGBT chip.

9. A semiconductor power module provided with the IGBT chip according to any one of claims 1 to 8, further comprising a first drive chip and a second drive chip;

the first driving integrated block is connected with a second gate electrode unit of a current detection area in the IGBT chip and used for driving the current detection area to work;

the second driving integrated block is connected with a first gate electrode unit of a main working area in the IGBT chip and used for driving the main working area to work.

10. The semiconductor power module of claim 9, further comprising a test sampling resistor;

the second driving integrated block is also connected with the test sampling resistor and used for acquiring the voltage on the test sampling resistor.

Technical Field

The invention relates to the technical field of semiconductor devices, in particular to an IGBT chip and a semiconductor power module.

Background

Semiconductor power modules are widely used in chopper or inverter circuits, and generally, a controllable switching device and a freewheeling device such as an IGBT (Insulated Gate Bipolar Transistor) chip are mainly included in the semiconductor power module. In order to ensure that the semiconductor power module can work safely and reliably, the current of devices in the semiconductor power module is generally tested and monitored in real time, so that the circuit is protected conveniently.

At present, a current sensor integrated in an IGBT chip is utilized to realize current test monitoring on a device in a semiconductor power module, the current sensor is usually integrated in the IGBT chip in a Kelvin (Kelvin) connection mode, and the current proportional relation between a current detection area and a main working area is unstable due to the test mode, so that the problems of current detection precision and low sensitivity exist.

Disclosure of Invention

In view of the above, the present invention provides an IGBT chip and a semiconductor power module to alleviate the above technical problems.

In a first aspect, an embodiment of the present invention provides an IGBT chip, where the IGBT chip includes: a main working area, a current detection area and a grounding area; the IGBT chip comprises a first surface, a second surface, a first gate electrode unit, a first emitter unit, a second gate electrode unit, a second emitter unit, a current detection area and a control unit, wherein the first surface of the IGBT chip is provided with the first gate electrode unit and the first emitter unit of a main working area; a first collector unit of the main working region and a second collector unit of the current detection region are arranged on the second surface of the IGBT chip, and the first collector unit and the second collector unit are overlapped; the second surface and the first surface are two opposite surfaces on the IGBT chip; the grounding area is arranged at any position in the first emitter unit; the current detection area and the grounding area are respectively used for being connected with the test sampling resistor, so that voltage is generated on the test sampling resistor, and the working current of the main working area can be detected according to the voltage.

With reference to the first aspect, an embodiment of the present invention provides a first possible implementation manner of the first aspect, wherein the current detection area is disposed in an edge area of the main working area.

With reference to the first possible implementation manner of the first aspect, an embodiment of the present invention provides a second possible implementation manner of the first aspect, where an area of the current detection region is smaller than an area of the main operating region.

With reference to the first aspect, an embodiment of the present invention provides a third possible implementation manner of the first aspect, where the IGBT chip is an IGBT chip with a trench structure.

With reference to the first aspect, an embodiment of the present invention provides a fourth possible implementation manner of the first aspect, where a plurality of grooves are respectively disposed in corresponding positions of the current detection area and the main working area, and a groove width of the current detection area is smaller than a groove width of the main working area.

With reference to the fourth possible implementation manner of the first aspect, an embodiment of the present invention provides a fifth possible implementation manner of the first aspect, where each trench is filled with polysilicon.

With reference to the first aspect, an embodiment of the present invention provides a sixth possible implementation manner of the first aspect, wherein an N-type withstand voltage drift layer and a conductive layer are further provided between the first main surface of the IGBT chip and the second main surface of the IGBT chip.

With reference to the sixth possible implementation manner of the first aspect, an embodiment of the present invention provides a seventh possible implementation manner of the first aspect, wherein a terminal protection region is further disposed at an edge of the IGBT chip, where the terminal protection region includes a plurality of P + field limiting rings or P-type diffusion regions disposed on the N-type withstand voltage drift layer; and the plurality of P + field limiting rings or P-type diffusion regions are used for carrying out voltage-resistant protection on the IGBT chip.

In a second aspect, an embodiment of the present invention further provides a semiconductor power module, where the semiconductor power module is configured with the IGBT chip, and further includes a first driving integrated package and a second driving integrated package; the first driving integrated block is connected with a second gate electrode unit of a current detection area in the IGBT chip and used for driving the current detection area to work; the second driving integrated block is connected with the first gate electrode unit of the main working area in the IGBT chip and used for driving the main working area to work.

With reference to the second aspect, an embodiment of the present invention provides a first possible implementation manner of the second aspect, where the semiconductor power module further includes a test sampling resistor; the second driving integrated block is also connected with the testing sampling resistor and used for acquiring the voltage on the testing sampling resistor.

The embodiment of the invention has the following beneficial effects:

according to the IGBT chip and the semiconductor power module provided by the embodiment of the invention, the first surface of the IGBT chip is provided with the first gate electrode unit and the first emitter unit of the main working area, the second gate electrode unit and the second emitter unit of the current detection area, the second surface of the IGBT chip is provided with the first collector unit of the main working area and the second collector unit of the current detection area, and the grounding area is arranged at any position in the first emitter unit; the current detection area and the grounding area are respectively used for being connected with two ends of the test sampling resistor, so that voltage is generated on the test sampling resistor, and the working current of the main working area is detected according to the voltage.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic circuit diagram of an IGBT chip according to an embodiment of the present invention;

fig. 2 is a schematic circuit diagram of another IGBT chip according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of a current curve according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of an IGBT chip according to an embodiment of the present invention;

fig. 5 is a schematic circuit diagram of another IGBT chip according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of another IGBT chip according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of a semiconductor power module according to an embodiment of the present invention;

fig. 8 is a schematic diagram of a wiring connection of a semiconductor power module according to an embodiment of the present invention.

Icon:

101-a first gate electrode unit; 102-a first emitter unit; 103-a second gate electrode unit; 104-a second emitter cell; 105-a ground region; 106-terminal protection area; 200-a collector electrode; 4-a metal sheet; a 6-N + source region; a 7-P well region; 14. 8-a trench; 9-polycrystalline silicon; 10-insulating oxide layer; 11-N type withstand voltage drift layer; 12-a conductive layer; 13-a metal electrode; 700-semiconductor power module; 701-an IGBT chip; 702 — a first drive integrated block; 703-a second drive integrated block; 800-DCB plate; 801-module lead terminals; 802-conductive lines.

Detailed Description

To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

At present, because the IGBT chip has the characteristics of low on-state voltage, large current capacity, high input impedance, high response speed and simple control, the IGBT chip is widely applied to industry, information, new energy, medicine, traffic, military and aviation cold rain. With the continuous progress of the packaging technology of the IGBT chip and the continuous improvement of the application requirements, various semiconductor power modules are continuously emerging, and a drive control circuit and a protection circuit are packaged inside the module on the basis of a common IGBT module, so that the reliability of the module is improved, the loss is reduced, the volume is reduced, and the capacity is improved.

In order to fully embody the advantages of a semiconductor power module and better protect a chip inside the module, a current sensor is generally added on a DCB (Direct Bonding Copper clad laminate) board of the power module, and a mirror current detection principle is generally adopted, such as a circuit schematic diagram of an IGBT chip shown in fig. 1, as shown in fig. 1, the main method is to perform a step of comparing, in an active area of the chip, a current value of 1: 1000, source region metal electrodes separated 1/1000, as current sensing sensors with collector and gate common to the main operating region and emitter separated. During current detection, the measuring voltage V generated on the sampling resistor R is tested_SThe current state in the operation of the device is detected in an external circuit by testing the current in the electrodes.

In the mirror current detection, the current testing precision can be influenced by the impedance generated by the parasitic resistance and the inductance of an emitter lead, so the mirror current detection is improved, Kelvin connection is generally adopted at present, another IGBT chip circuit schematic diagram is shown in figure 2, as shown in figure 2, when a grid is in a high level, a current sensor and a main working area respectively flow through currents, the current of the current sensor flows through a sampling resistor R to metal of an emitting area of the main working area and then flows to the ground through the emitter lead of the main working area, a detection signal is obtained on the sampling resistor, the detection resistor is directly connected with the metal of the main working area through the lead, and the influence of the grounding voltage of the main working current on the testing can be avoided.

However, Kelvin connection easily causes that the test current and the working current are not "mirror currents", as shown in a current curve diagram of fig. 3, as shown in fig. 3, the test current curve does not correspond to the working current curve, that is, during current detection, the current magnitude of the corresponding main working area is known by testing the voltage generated on the sampling resistor R. However, the voltage on the test sampling resistor R raises the Metal Oxide Semiconductor (MOS) trench channel-to-ground potential of the current detection region at the same time, which reduces the gate voltage of the current detection region, and increases the channel resistance of the MOS of the current detection region. When the current of the current detection area is larger, the channel resistance of the MOS of the current detection area is larger, so that the larger the current of the detection voltage in the main working area of the IGBT is, the larger the deviation of the proportional relation between the current of the current detection area and the current of the main working area is, signal distortion under large current is generated, and the detection precision and sensitivity of the main working area working under large current or abnormal overcurrent are lower. Based on this, the IGBT chip and the semiconductor power module provided by the embodiments of the present invention can alleviate the above technical problems.

In order to facilitate understanding of the present embodiment, a detailed description will be given to an IGBT chip disclosed in the present embodiment.