Gallium nitride HEMT (high electron mobility transistor) tube integrated circuit, flyback circuit, bridgeless PFC (power factor correction) circuit and laser radar
阅读说明：本技术 氮化镓hemt管集成电路、反激电路、无桥pfc电路及激光雷达 (Gallium nitride HEMT (high electron mobility transistor) tube integrated circuit, flyback circuit, bridgeless PFC (power factor correction) circuit and laser radar ) 是由 何川 赵起越 于 2019-10-24 设计创作，主要内容包括：本发明涉及一种氮化镓HEMT管集成电路、反激电路、无桥PFC电路及激光雷达。其中,氮化镓HEMT管集成电路包括：封装于管壳内的第一氮化镓HEMT管、反向续流单元及泄放单元；反向续流单元的输入端连接第一氮化镓HEMT管的源极,输出端连接第一氮化镓HEMT管的漏极,用于与第一氮化镓HEMT管构成反向续流回路；泄放单元的输入端连接第一氮化镓HEMT管的漏极,输出端用于接地,用于为第一氮化镓HEMT管进行电流泄放。通过针对主管芯第一氮化镓HEMT管配置反向续流单元,使氮化镓HEMT管集成电路具备良好的反向续流能力,配置泄放单元为第一氮化镓HEMT泄放电流,提高雪崩耐量,从而提高主管芯第一氮化镓HEMT管的容限范围,能够在更多场景下取代MOSFET,获得比MOSFET更优的性能。(The invention relates to a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar. Wherein, gallium nitride HEMT pipe integrated circuit includes: the first gallium nitride HEMT tube, the reverse follow current unit and the bleeder unit are packaged in the tube shell; the input end of the reverse follow current unit is connected with the source electrode of the first gallium nitride HEMT tube, and the output end of the reverse follow current unit is connected with the drain electrode of the first gallium nitride HEMT tube and is used for forming a reverse follow current loop with the first gallium nitride HEMT tube; the input end of the bleeder unit is connected with the drain electrode of the first gallium nitride HEMT tube, and the output end of the bleeder unit is grounded and used for carrying out current bleeder on the first gallium nitride HEMT tube. The reverse follow current unit is configured for the first gallium nitride HEMT tube of the main tube core, so that the integrated circuit of the gallium nitride HEMT tube has good reverse follow current capability, the discharge unit is configured to discharge current of the first gallium nitride HEMT, and the avalanche tolerance is improved, so that the tolerance range of the first gallium nitride HEMT tube of the main tube core is improved, the MOSFET can be replaced under more scenes, and the performance better than the MOSFET is obtained.)
1. A gallium nitride HEMT-tube integrated circuit, comprising: the first gallium nitride HEMT tube and the reverse follow current unit are packaged in the tube shell;
the input end of the reverse follow current unit is connected with the source electrode of the first gallium nitride HEMT tube, and the output end of the reverse follow current unit is connected with the drain electrode of the first gallium nitride HEMT tube and is used for forming a reverse follow current loop with the first gallium nitride HEMT tube;
the input end of the bleeder unit is connected with the drain electrode of the first gallium nitride HEMT tube, and the output end of the bleeder unit is grounded and used for carrying out current bleeder on the first gallium nitride HEMT tube.
2. The gallium nitride HEMT tube integrated circuit of claim 1, wherein said reverse freewheeling unit comprises: a second gallium nitride HEMT tube;
the source electrode of the second gallium nitride HEMT tube is connected with the drain electrode of the first gallium nitride HEMT tube, and the drain electrode of the second gallium nitride HEMT tube is connected with the source electrode of the first gallium nitride HEMT tube;
and the grid electrode of the second gallium nitride HEMT tube is connected with the drain electrode.
3. The gallium nitride HEMT tube integrated circuit of claim 2, wherein said reverse freewheeling unit further comprises: a third gallium nitride HEMT tube and a first resistor;
the first end of the first resistor is connected with the drain electrode of the first gallium nitride HEMT tube, and the second end of the first resistor is connected with the source electrode of the second gallium nitride HEMT tube;
and the grid electrode of the third gallium nitride HEMT tube is connected with the source electrode of the second gallium nitride HEMT tube, the drain electrode of the third gallium nitride HEMT tube is connected with the source electrode of the first gallium nitride HEMT tube, and the source electrode of the third gallium nitride HEMT tube is connected with the first end of the first resistor.
4. The gallium nitride HEMT tube integrated circuit of any one of claims 1 to 3, wherein said bleeder unit comprises: a second resistor, a third resistor and a fourth gallium nitride HEMT tube;
the first end of the second resistor is connected with the grid electrode of the fourth gallium nitride HEMT tube, and the second end of the second resistor is grounded;
the first end of the third resistor is connected with the drain electrode of the first gallium nitride HEMT tube, and the second end of the third resistor is connected with the grid electrode of the fourth gallium nitride HEMT tube;
and the drain electrode of the fourth gallium nitride HEMT tube is connected with the first end of the third resistor, and the source electrode of the fourth gallium nitride HEMT tube is grounded.
5. The gallium nitride HEMT tube integrated circuit of claim 4, wherein the bleeder unit further comprises: a fourth resistor and a fifth gallium nitride HEMT tube;
the first end of the fourth resistor is connected with the source electrode of the fourth gallium nitride HEMT tube, and the second end of the fourth resistor is grounded;
and the source electrode of the fifth gallium nitride HEMT tube is connected with the second end of the fourth resistor, the drain electrode of the fifth gallium nitride HEMT tube is connected with the drain electrode of the fourth gallium nitride HEMT tube, and the grid electrode of the fifth gallium nitride HEMT tube is connected with the first end of the fourth resistor.
6. The gallium nitride HEMT tube integrated circuit of claim 5, wherein the first, second, third and fourth resistors are 2DEG resistors.
7. A flyback circuit comprising a switching cell, characterized in that the switching cell comprises a gallium nitride HEMT-transistor integrated circuit according to any one of claims 1 to 6.
8. A bridgeless PFC circuit comprising a high-frequency switching cell, characterized in that the high-frequency switching cell comprises a gallium nitride HEMT-tube integrated circuit according to any one of claims 1 to 6.
9. A lidar characterized in that a laser transmission circuit of the lidar comprises a gallium nitride HEMT tube integrated circuit according to any one of claims 1 to 6.
10. A millimeter wave radar comprising a pulse generator, characterized in that the pulse generator comprises a gallium nitride HEMT device integrated circuit according to any one of claims 1 to 6.
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride HEMT integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar.
Background
With the technical iteration of scientific and technological products, no matter consumer electronics, communication hardware, electric vehicles or household appliances, the problems of how to improve the power conversion efficiency, improve the power density level, prolong the service time of a battery and accelerate the switching speed are all necessary to be considered. Based on the improvement of these problems, the electronics industry is becoming increasingly dependent on a new type of power semiconductor, gallium nitride (GaN) HEMT (High Electron Mobility Transistor).
Gallium nitride HEMTs can switch faster than MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors). However, compared with the MOSFET, the gallium nitride HEMT tube has poor reverse freewheeling capability and poor avalanche performance, and cannot completely replace the MOSFET in some application scenarios.
Disclosure of Invention
In view of the above, it is desirable to provide a gallium nitride HEMT integrated circuit, a flyback circuit, a bridgeless PFC circuit, and a radar.
A gallium nitride HEMT-tube integrated circuit comprising: the first gallium nitride HEMT tube, the reverse follow current unit and the bleeder unit are packaged in the tube shell;
the input end of the reverse follow current unit is connected with the source electrode of the first gallium nitride HEMT tube, and the output end of the reverse follow current unit is connected with the drain electrode of the first gallium nitride HEMT tube and is used for forming a reverse follow current loop with the first gallium nitride HEMT tube;
the input end of the bleeder unit is connected with the drain electrode of the first gallium nitride HEMT tube, and the output end of the bleeder unit is grounded and used for carrying out current bleeder on the first gallium nitride HEMT tube.
In one embodiment, the reverse freewheeling unit includes: a second gallium nitride HEMT tube;
the source electrode of the second gallium nitride HEMT tube is connected with the drain electrode of the first gallium nitride HEMT tube, and the drain electrode is connected with the source electrode of the first gallium nitride HEMT tube;
and the grid electrode of the second gallium nitride HEMT tube is connected with the drain electrode.
In one embodiment, the reverse freewheeling unit further includes: a third gallium nitride HEMT tube and a first resistor;
the first end of the first resistor is connected with the drain electrode of the first gallium nitride HEMT tube, and the second end of the first resistor is connected with the source electrode of the second gallium nitride HEMT tube;
the grid electrode of the third gallium nitride HEMT tube is connected with the source electrode of the second gallium nitride HEMT tube, the drain electrode of the third gallium nitride HEMT tube is connected with the source electrode of the first gallium nitride HEMT tube, and the source electrode of the third gallium nitride HEMT tube is connected with the first end of the first resistor.
In one embodiment, the bleed unit comprises: a second resistor, a third resistor and a fourth gallium nitride HEMT tube;
the first end of the second resistor is connected with the grid electrode of the fourth gallium nitride HEMT tube, and the second end of the second resistor is used for grounding;
the first end of the third resistor is connected with the drain electrode of the first gallium nitride HEMT tube, and the second end of the third resistor is connected with the grid electrode of the fourth gallium nitride HEMT tube;
and the drain electrode of the fourth gallium nitride HEMT tube is connected with the first end of the third resistor, and the source electrode is grounded.
In one embodiment, the bleed unit further comprises: a fourth resistor and a fifth gallium nitride HEMT tube;
the first end of the fourth resistor is connected with the source electrode of the fourth gallium nitride HEMT tube, and the second end of the fourth resistor is used for grounding;
and the source electrode of the fifth gallium nitride HEMT tube is connected with the second end of the fourth resistor, the drain electrode of the fifth gallium nitride HEMT tube is connected with the drain electrode of the fourth gallium nitride HEMT tube, and the grid electrode of the fifth gallium nitride HEMT tube is connected with the first end of the fourth resistor.
In one embodiment, the first resistor, the second resistor, the third resistor and the fourth resistor are 2DEG resistors.
A flyback circuit comprises a switch unit, wherein the switch unit comprises a gallium nitride HEMT integrated circuit.
A bridgeless PFC circuit comprises a high-frequency switch unit which comprises a gallium nitride HEMT tube integrated circuit.
A laser radar, the laser emission circuit of which comprises a gallium nitride HEMT tube integrated circuit.
A millimeter wave radar includes a pulse generator including a gallium nitride HEMT tube integrated circuit.
According to the gallium nitride HEMT integrated circuit, the reverse follow current unit is configured for the first gallium nitride HEMT of the main tube core, so that the gallium nitride HEMT integrated circuit has good reverse follow current capability, the discharge unit is configured to discharge current of the first gallium nitride HEMT, and avalanche tolerance is improved, so that the tolerance range of the first gallium nitride HEMT of the main tube core is improved, the MOSFET can be replaced under more scenes, and better performance than the MOSFET is obtained.
Drawings
FIG. 1 is a schematic diagram of a gallium nitride HEMT integrated circuit according to one embodiment;
FIG. 2 is a schematic diagram of a circuit configuration of a gallium nitride HEMT integrated circuit according to one embodiment;
FIG. 3 is a schematic circuit diagram of an embodiment of a reverse freewheeling unit;
fig. 4 is a schematic circuit structure diagram of the bleeding unit in one embodiment.
Detailed Description
In order that the invention may be more fully understood, reference will now be made to the following description. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
In one embodiment, as shown in fig. 1, there is provided a gallium nitride HEMT tube integrated circuit comprising: a first gallium nitride HEMT tube N1, a
the input end of the reverse follow
the input end of the
Based on a first gallium nitride HEMT tube N1 of the main tube core, a
Compared with MOSFET, the GaN HEMT device can be converted more quickly, and the power consumption is not sacrificed by increasing the working frequency, so that the capacity of the capacitor and the inductor is reduced. The switching loss of the gallium nitride HEMT device is very low, the ultralow junction capacitance of the gallium nitride HEMT device can ensure smaller dead zone loss, the working efficiency is higher, an absorption circuit is not required to be configured, the cost is saved, the circuit design can be simplified, and the size of the gallium nitride HEMT device is reduced by nearly two thirds compared with that of a MOSFET. However, in some application circuits, such as a Buck circuit, a flyback circuit, etc., it is necessary to have the advantages of the gallium nitride HEMT device, and at the same time, it is necessary to have good reverse freewheeling capability and avalanche performance, and it is not possible to meet the circuit design requirements by directly using the gallium nitride HEMT device.
Based on the main tube core first gallium nitride HEMT tube N1, the reverse follow
In one embodiment, as shown in fig. 2, the
the source electrode of the second gallium nitride HEMT tube N2 is connected with the drain electrode of the first gallium nitride HEMT tube N1, and the drain electrode is connected with the source electrode of the first gallium nitride HEMT tube N1;
the gate and the drain of the second gallium nitride HEMT tube N2 are connected.
When the grid electrode of the second gallium nitride HEMT tube N2 is connected with the drain electrode, the characteristic equivalent to the forward conduction of the diode is presented, the small signal characteristic similar to small resistance is presented, and because the drain electrode is connected with the grid electrode, Vds is ensured to be larger than Vgs-Vth, namely, the second gallium nitride HEMT tube N2 always works in the saturation region under the normal condition. If the main tube core first gallium nitride HEMT tube N1 has reverse follow current, the source of the first gallium nitride HEMT tube N1 has output, the grid voltage of the second gallium nitride HEMT tube N2 increases, when the on voltage of the second gallium nitride HEMT tube N2 is reached, the second gallium nitride HEMT tube N2 is conducted, and forms a reverse follow current loop with the main tube core first gallium nitride HEMT tube N1. In one embodiment, the free-wheeling capability of the integrated circuit can also be adjusted by adjusting the total width of the gate of the second gallium nitride HEMT tube N2.
In one embodiment, as shown in fig. 3, the
a first end of the first resistor R1 is connected with the drain electrode of the first gallium nitride HEMT tube N1, and a second end is connected with the source electrode of the second gallium nitride HEMT tube N2;
the gate of the third gallium nitride HEMT tube N3 is connected to the source of the second gallium nitride HEMT tube N2, the drain is connected to the source of the first gallium nitride HEMT tube N1, and the source is connected to the first end of the first resistor R1.
The third gallium nitride HEMT tube N3 is connected in parallel with the second gallium nitride HEMT tube N2, and the first resistor R1 is used as the bias resistor of the third gallium nitride HEMT tube N3, when the main tube core first gallium nitride HEMT tube N1 is not conducted and needs reverse conduction freewheeling, when the difference between the source voltage and the drain voltage of the main tube core first gallium nitride HEMT tube N1 is larger than the conduction voltage Vth (N2) of the second gallium nitride HEMT tube N2, the second gallium nitride HEMT tube N2 is conducted, the current starts to flow to the drain of the first gallium nitride HEMT tube N1 on the R main tube 1, and when I is connected with the first gallium nitride HEMT tube N2R1*R1>Vth (N3) of the third gan HEMT tube N3 turns on, freewheeling from the source to the drain of the main core first gan HEMT tube N1, where Vth (N3) is the turn-on voltage of the third gan HEMT tube N3, and the third gan in parallelThe HEMT tube N3 and the second gallium nitride HEMT tube N2 can shunt the follow current, and the reverse follow current capability of the integrated circuit is improved.
In one embodiment, as shown in fig. 2, the
a first end of the second resistor R2 is connected with the grid electrode of the fourth gallium nitride HEMT tube N4, and a second end is used for grounding;
a first end of the third resistor R3 is connected with the drain electrode of the first gallium nitride HEMT tube N1, and a second end is connected with the grid electrode of the fourth gallium nitride HEMT tube N4;
the drain of the fourth gallium nitride HEMT tube N4 is connected to the first end of the third resistor R3, and the source is connected to ground.
When the main-die first gallium nitride HEMT tube N1 is turned off and the main-die first gallium nitride HEMT tube N1 is required to continue flowing current from the drain to the source of the first gallium nitride HEMT tube N1, the voltage at the drain end of the main-die first gallium nitride HEMT tube N1 will continuously rise until the turn-on voltage Vth (N4) of the fourth gallium nitride HEMT tube N4 is less than or equal to (R2/(R2+ R3)). VDrain, wherein VDrain is the voltage at the drain end of the main-die first gallium nitride HEMT tube N1, at this time, the fourth gallium nitride HEMT tube N4 is turned on, current flows in from the drain of the fourth gallium nitride HEMT tube N4, flows out through the grounded source to form a continuous current, and forms a leakage loop for the main-die first gallium nitride HEMT tube N1, thereby improving the tolerance of the integrated circuit. In one embodiment, the avalanche tolerance can be adjusted by adjusting the total gate width of the fourth gallium nitride HEMT tube N4 according to requirements.
In one embodiment, as shown in fig. 4, the
a first end of the fourth resistor R4 is connected with the source electrode of the fourth gallium nitride HEMT tube N4, and a second end is used for grounding;
the source of the fifth gallium nitride HEMT transistor N5 is connected to the second terminal of the fourth resistor R4, the drain is connected to the drain of the fourth gallium nitride HEMT transistor N4, and the gate is connected to the first terminal of the fourth resistor R4.
When the main die first gallium nitride HEMT tube N1 is turned off, and the main die first gallium nitride HEMT tube N1 is required to continue from the first gallium nitride HEMT tubeWhen the drain of the HEMT tube N1 freewheels from the source, the drain terminal voltage of the first gallium nitride HEMT tube N1 of the main core will continuously rise until the turn-on voltage Vth (N4) of the fourth gallium nitride HEMT tube N4 is less than or equal to (R2/(R2+ R3)). multidrop VDrain, where VDrain is the drain terminal voltage of the first gallium nitride HEMT tube N1 of the main core, at this time, the fourth gallium nitride tube N4 is turned on, and the current starts to flow through the fourth resistor R4, when I is equal toR4When R4 is not less than Vth (N5), where Vth (N5) is the turn-on voltage of the fifth gallium nitride HEMT tube N5, at this time, the fifth gallium nitride HEMT tube N5 is turned on, current flows in from the drain of the fifth gallium nitride HEMT tube N5, and flows out through the grounded source to form a follow current, thereby forming a bleed-off loop for the main core first gallium nitride HEMT tube N1, and improving the avalanche resistance of the integrated circuit. The fifth gallium nitride HEMT tube N5 is connected with the fourth gallium nitride HEMT tube N4 in parallel, so that the leakage current can be shunted, and the avalanche resistance of the integrated circuit is further improved.
In one embodiment, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are 2DEG resistors.
In one embodiment, the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 may be other resistors, and only need to meet the leakage current requirement of each gallium nitride HEMT and ensure that the gallium nitride HEMT is not broken down in the working interval, and those skilled in the art can select the resistors according to the needs.
In one embodiment, a flyback circuit includes a switching unit, and the switching unit includes any one of the gallium nitride HEMT transistor integrated circuits in the above embodiments.
In one embodiment, a bridgeless PFC circuit includes a high-frequency switching unit including any one of the gallium nitride HEMT transistor integrated circuits in the above embodiments.
In one embodiment, the laser transmitting circuit of the laser radar comprises the gallium nitride HEMT integrated circuit in any one of the embodiments.
In one embodiment, a millimeter wave radar includes a pulse generator including any one of the gallium nitride HEMT tube integrated circuits of the above embodiments.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
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