阅读说明：本技术 半导体工艺及半导体设备 (Semiconductor process and semiconductor device ) 是由 陈俊志 钟嘉麒 杨文豪 黄镖浚 林宏铭 于 2018-06-06 设计创作，主要内容包括：一种半导体工艺,适于使用半导体设备对半导体晶片进行显影工艺。半导体工艺至少包括下列步骤。在化学溶液经由半导体设备的喷嘴提供至半导体晶片上的期间,藉由半导体设备的摄影装置依序撷取喷嘴的第一图像及第二图像。计算第一图像及第二图像的分析区域中化学溶液所占的比例,以判断半导体设备是否异常。另提供一种适于对半导体晶片进行显影工艺的半导体设备。(a semiconductor process is suitable for developing a semiconductor wafer using a semiconductor device. The semiconductor process comprises at least the following steps. While the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus, a first image and a second image of the nozzle are sequentially captured by a photographing device of the semiconductor apparatus. And calculating the proportion of the chemical solution in the analysis areas of the first image and the second image to judge whether the semiconductor equipment is abnormal. A semiconductor apparatus adapted to perform a developing process on a semiconductor wafer is also provided.)

1. A semiconductor process adapted to perform a developing process on a semiconductor wafer using a semiconductor apparatus, the semiconductor process comprising:

Sequentially capturing a first image and a second image of a nozzle of the semiconductor apparatus by a photographing device of the semiconductor apparatus while a chemical solution is supplied onto the semiconductor wafer through the nozzle; and

And calculating the proportion of the chemical solution in the analysis areas of the first image and the second image to judge whether the semiconductor equipment is abnormal.

2. The semiconductor process of claim 1, wherein calculating the proportion of the chemical solution in the analysis region comprises:

Stopping supplying the chemical solution onto the semiconductor wafer when the ratio reaches a set value in the analysis area of the second image.

3. The semiconductor process of claim 1, wherein calculating the proportion of the chemical solution in the analysis region comprises:

when the proportion in the analysis area of the second image does not reach a set value, displaying that the semiconductor equipment generates an abnormality.

4. The semiconductor process of claim 1, wherein calculating the ratio of the chemical solution in the analysis region is calculating the number of pixels in the analysis region that the nozzle is immersed in the chemical solution and/or calculating the number of pixels in the analysis region that the nozzle is not immersed in the chemical solution.

5. A semiconductor process adapted to perform a developing process on a semiconductor wafer using a semiconductor apparatus, the semiconductor process comprising:

capturing images of a chemical solution, a nozzle and a semiconductor wafer by a photographing device of the semiconductor apparatus during the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus; and

analyzing the degree of immersion of the nozzle into the chemical solution in the image to determine whether the chemical solution is sufficient for the developing process.

6. The semiconductor process of claim 5, further comprising:

stopping supplying the chemical solution onto the semiconductor wafer when the nozzle is immersed into the chemical solution to a set value in the analyzed image.

7. The semiconductor process of claim 5, wherein during the capturing of the image by the camera device, sufficient light is provided by an illumination device of the semiconductor equipment for the camera device.

8. the semiconductor process of claim 5, wherein analyzing the extent to which the nozzle is immersed in the chemical solution in the image comprises:

an analysis region of the image is set, and a proportion of the nozzle immersed in the chemical solution and/or a proportion of the nozzle not immersed in the chemical solution in the analysis region is calculated.

9. The semiconductor process of claim 5, further comprising:

cleaning and reworking the chemical solution on the semiconductor wafer when the analyzed image shows that the chemical solution is not sufficiently supplied.

10. A semiconductor apparatus adapted to perform a developing process on a semiconductor wafer, comprising:

the developing machine comprises a nozzle, wherein the nozzle is arranged above the semiconductor wafer to provide chemical solution to the semiconductor wafer;

a photographing device which photographs an image of the nozzle and the chemical solution;

an illumination device that illuminates the nozzle and the chemical solution; and

an image processor coupled to the camera to receive the image captured by the camera and to analyze the degree of immersion of the nozzle in the chemical solution in the image.

Technical Field

the present invention relates to semiconductor processing and semiconductor equipment, and more particularly, to semiconductor processing and semiconductor equipment suitable for developing semiconductor wafers.

background

Semiconductor devices are currently used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic devices. Semiconductor devices are basically manufactured by sequentially depositing materials for an insulating or dielectric layer, a conductive layer and a semiconductor layer onto a wafer and patterning the various material layers using lithographic techniques to form circuit elements on the wafer. In the fabrication of semiconductor integrated circuits, photolithography is a very critical step. Generally, a photolithography process includes several main steps of coating (coating) a photoresist, exposing (exposing), developing (removing) the photoresist, wherein the developing step is to remove a desired portion of the photoresist layer by a chemical reaction of a developing solution, thereby forming a photoresist pattern. Therefore, the developing conditions must be closely controlled to prevent the undesired portions of the photoresist layer from being eroded by the developing solution, which affects the accuracy of the transferred pattern.

in addition, when the semiconductor device performs a developing process on a wafer, since the developer flow monitoring system cannot detect whether the pipeline is damaged in real time, if the pipeline is damaged, some defects are formed on the wafer, and thus the abnormal pattern transfer needs to be performed again. Therefore, the semiconductor equipment needs to be frequently maintained (e.g., whether a pipeline is broken or not, whether a monitoring system is abnormal, etc.), and the wafer manufacturing efficiency is lowered. Therefore, there is a need to provide a solution that reduces wafer defects and reduces the time required to maintain semiconductor devices.

disclosure of Invention

The semiconductor process of the embodiment of the invention is suitable for developing a semiconductor wafer by using semiconductor equipment. The semiconductor process comprises at least the following steps. While the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus, a first image and a second image of the nozzle are sequentially captured by a photographing device of the semiconductor apparatus. And calculating the proportion of the chemical solution in the analysis areas of the first image and the second image to judge whether the semiconductor equipment is abnormal.

The semiconductor process of the embodiment of the invention is suitable for developing a semiconductor wafer by using semiconductor equipment. The semiconductor process comprises at least the following steps. During the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus, images of the chemical solution, the nozzle, and the semiconductor wafer are photographed by the photographing device of the semiconductor apparatus. The degree of immersion of the nozzle into the chemical solution in the image is analyzed to determine whether the chemical solution is sufficient for the development process.

The semiconductor apparatus of the embodiment of the present invention is adapted to perform a developing process on a semiconductor wafer. The semiconductor equipment comprises a developing machine table, a photographic device, an illuminating device and an image processor. The developing machine comprises a nozzle, wherein the nozzle is arranged above the semiconductor wafer to provide chemical solution to the semiconductor wafer. The camera device captures images of the nozzle and the chemical solution. The illumination device illuminates the nozzle and the chemical solution. The image processor is coupled to the camera device for receiving the image captured by the camera device and analyzing the degree of immersion of the nozzle into the chemical solution in the image.

Drawings

the various aspects of the invention are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a flow chart of a photolithography process according to an embodiment of the present invention;

FIGS. 2A-2E are schematic cross-sectional views of stages of a photolithography process according to an embodiment of the present invention;

FIGS. 3A and 3B are schematic cross-sectional views of a developing process with abnormal conditions and a photoresist pattern generated by the developing process in a photolithography process;

FIG. 4 is a schematic diagram of a semiconductor device in accordance with an embodiment of the present invention;

Fig. 5A and 5B are schematic diagrams of a flow detector of a semiconductor device in an off and on state according to an embodiment of the invention;

FIG. 6 is a flow chart of a semiconductor process in accordance with an embodiment of the present invention;

Fig. 7A to 7C are enlarged schematic views of a dotted-line block a of the semiconductor apparatus of fig. 4 in different states;

Fig. 8 is a timing diagram of images captured by the camera of the semiconductor device according to the embodiment of the invention.

Description of the reference numerals

10: a micro-lithography process;

20: a developing device;

200: a treatment chamber;

202: a die pad;

210: a developing machine;

212: a liquid supply system;

212 a: a nozzle;

212b, and (3 b): a holding device;

212 c: a pipeline;

212 d: a flow monitoring device;

212 ds: a flow detector;

212 dv: a valve member;

212e, and (3 e): a temporary storage barrel;

220: a photographing device;

230: an illumination device;

240: an image processor;

30: a semiconductor process;

A: a dashed box;

ABN: an anomaly;

AMP: a flow sense amplifier;

AR: an analysis area;

BL: a baseline;

DR: a chemical solution;

END: finishing distribution;

IMG: an image;

LS: a light source;

M: a mask;

PR: a photoresist layer;

PR': a photoresist pattern;

PRa: an exposed photoresist layer;

PRb: an unexposed photoresist layer;

PT: a preparation period;

s110, S120, S130, S140, S150, S310, S320, S330, S340: a step of;

STR: starting distribution;

W: a semiconductor wafer.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, forming a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact.

Furthermore, spatially relative terms such as "under", "below", "lower", "above", "upper", and the like may be used herein to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures for ease of description. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly as such.

fig. 1 is a flow chart of a lithography process 10 according to an embodiment of the invention, fig. 2A to 2E are cross-sectional views of stages of a lithography process according to an embodiment of the invention, and fig. 3A and 3B are cross-sectional views of a developing process having an abnormal condition and a photoresist pattern generated thereby in the lithography process. Referring to fig. 1 and fig. 2A to 2E and fig. 3A and 3B together, the process flow diagram of fig. 1 is illustrated, and first, a semiconductor wafer W may be provided as shown in fig. 2A, with reference to fig. 1 and fig. 2A to 2E. For example, the semiconductor wafer W may be formed of crystalline silicon, crystalline germanium, silicon germanium, and/or III-V compound semiconductors such as GaAsP, AlInAs, AlGaAs, GaInAs, or the like. In some embodiments, the semiconductor wafer W may also be a bulk Silicon wafer (bulk Silicon wafer) or a Silicon-On-Insulator (SOI) wafer. In some embodiments, the semiconductor wafer W may be a device wafer including integrated circuit devices (not shown) that may include transistors, resistors, capacitors, diodes, and/or the like. In some embodiments, the semiconductor wafer W may be an interposer wafer (interposer wafer) containing active devices and may or may not contain passive devices. The present invention does not limit the type of the semiconductor wafer W.

in step S110, a photoresist layer PR may be formed on the semiconductor wafer W. For example, the semiconductor wafer W may be placed on a vacuum chuck (not shown), and the photoresist material in a liquid state may be applied to the semiconductor wafer W while rotating the vacuum chuck, so that the photoresist material is uniformly spread on the surface of the semiconductor wafer W by a centrifugal force. In some embodiments, the semiconductor wafer W may be cleaned to remove contaminants and particles on the semiconductor wafer W before step S110 is performed. A dehydration bake may optionally be performed after the cleaning to remove moisture on the surface of the semiconductor wafer W. In some embodiments, before performing step S110, a primer (printing), such as Hexamethyldisilazane (HMDS), may be applied on the semiconductor wafer W to improve adhesion of the photoresist layer PR formed subsequently. It should be understood that although the figures illustrate positive photoresists, in other embodiments, negative photoresists may be used for the photolithography process, and the embodiments of the invention are not limited to the type of photoresist.

next, in step S120, the photoresist layer PR is exposed, and as shown in fig. 2C, an appropriate exposure light source LS may be provided as incident light. The light source LS exposes the design pattern on the semiconductor wafer W through the patterned mask M such that the uncovered portions of the photoresist layer PR absorb energy from the light source LS to undergo photochemical transformation to form the exposed photoresist layer PRa. The portions covered by the mask M are regarded as unexposed photoresist layers PRb. In some embodiments, the photoresist layer PR formed on the semiconductor wafer W may be subjected to a pre-exposure bake to remove a solvent in the photoresist layer PR before performing the exposure process. In some embodiments, after performing the exposure process, the photoresist layer PR formed on the semiconductor wafer W may be subjected to a post-exposure bake to mitigate standing wave effects on the photoresist layer PR and improve resolution.

Subsequently, in step S130, a chemical solution DR is provided by a developing apparatus 20 (only a portion of the developing apparatus 20 is shown in the figure) to the photoresist layer PR for development, as shown in fig. 2D. In some embodiments, the chemical solution DR is sprayed or dispensed (dispense) through a nozzle of the developing apparatus 20 to remove the exposed photoresist layer PRa (in the case of a positive photoresist) or the unexposed photoresist layer PRb (in the case of a negative photoresist) by a chemical reaction. An appropriate chemical solution DR may be selected as the developer depending on the type of photoresist. For example, the chemical solution DR may include tetramethylammonium hydroxide (TMAH), potassium hydroxide, sodium hydroxide, Xylene (Xylene), or other suitable solvents as the developer.

In some embodiments, after the developing process is performed, if it is determined that the photoresist pattern PR 'formed on the semiconductor wafer W matches the design pattern (as shown in fig. 2E), the next processing procedure, such as an ion implantation process or an etching process, stripping the photoresist pattern PR', and the like, is performed to form a patterned insulating layer, a patterned metal layer, and the like on the semiconductor wafer W in step S140. In some embodiments, after performing the developing process, if the photoresist pattern PR 'formed on the semiconductor wafer W does not conform to the design pattern (as shown in fig. 3B), the photoresist pattern PR' is modified and removed, i.e., step S150. For example, it is possible to determine whether the photoresist pattern PR' formed on the semiconductor wafer W can conform to the design pattern by determining whether an abnormality occurs in a semiconductor apparatus performing a developing process.

in some embodiments, as shown in fig. 3A and 3B, during the developing process, abnormal ABN (such as a damaged delivery line of the chemical solution or a damaged nozzle) occurs in the semiconductor equipment, so that the chemical solution DR applied on the photoresist layer PR is insufficient to develop the photoresist layer PR, and the developed photoresist pattern PR' is not in accordance with the design pattern. The method for determining the abnormality of the semiconductor device in the developing process will be described in detail with reference to the drawings. In other embodiments, it may be determined whether the photoresist pattern PR' formed on the semiconductor wafer W matches the design pattern through overlay, microspur measurement and/or post-development inspection (ADI) After the developing process. If the detected pattern is normal, the next processing procedure is executed, and if the photoresist pattern PR 'has an abnormal condition, the next processing procedure is executed, for example, after the abnormal photoresist pattern PR' is removed, the above steps are executed after the flow is started.

fig. 4 is a schematic diagram of a semiconductor apparatus according to an embodiment of the invention, and fig. 5A and 5B are schematic diagrams of a flow detector of the semiconductor apparatus according to the embodiment of the invention in an off and on state. Referring to fig. 4, 5A and 5B, the semiconductor apparatus according to the embodiment of the invention is, for example, a developing apparatus 20 adapted to perform a developing process on a semiconductor wafer W. In some embodiments, the semiconductor device may be an integrated system including processes of photoresist coating, exposing, and developing, that is, the developing device 20 illustrated in fig. 4 may be a part of the semiconductor device. The developing apparatus 20 may include a process chamber 200, a developing station 210, a photographing device 220, an illuminating device 230, an image processor 240, a liquid supply device 250, and the like. The process chamber 200 may include a wafer holder 202 to hold and/or rotate a semiconductor wafer W during development. The die pad 202 is, for example, an electrostatic die pad or other suitable die pads, but the embodiment of the invention is not limited thereto. The developing machine 210 may be disposed in the processing chamber 200, or some devices of the developing machine 210 may be disposed outside the processing chamber 200 according to actual requirements.

For example, the development station 210 includes a liquid supply system 212. The liquid supply system 212 may include a nozzle 212a disposed above the semiconductor wafer W to supply the chemical solution DR onto the semiconductor wafer W. In some embodiments, the liquid supply system 212 may further include a holding device 212b, a line 212c connected to the nozzle 212a, a flow monitoring device 212d connected to the line 212c, and a buffer tank 212e containing the chemical solution DR. It should be understood that the three sets of the temporary storage buckets 212e, the flow monitoring device 212d and the pipeline 212c shown in fig. 4 are only examples, and may be adjusted according to actual requirements, and the embodiment of the invention is not limited thereto.

in some embodiments, the flow monitoring device 212d may monitor and regulate the delivery status of the chemical solution DR. For example, the nozzle 212a may be disposed on the holding device 212b and connected to the buffer tank 212e via the line 212 c. The flow rate monitoring device 212d can control the chemical solution DR stored in the temporary storage tank 212e to be delivered to the nozzle 212a through the pipeline 212 c. In some embodiments, the buffer tank 212e may contain various solutions, such as cleaning solution or developing solution, to provide different functions during the developing process. In some embodiments, the buffer tank 212e may be configured with a liquid level detector (not shown). In some embodiments, the buffer tank 212e may be coupled to a gas supply source (not shown) for supplying the chemical solution DR to the nozzle 212a by gas pressurization.

further, the flow rate and the flow rate of the chemical solution DR entering the nozzle 212a can be controlled by the flow monitoring device 212 d. For example, the flow monitoring device 212d may include a valve 212dv and/or a pump (not shown). The valve 212dv may include a solenoid valve, a pneumatic valve, or other suitable on/off valve to determine the back-suction adjustment of the chemical solution DR. In some embodiments, the flow monitor 212d may selectively set the flow detector 212ds and the flow detection amplifier AMP to perform flow detection and control. In some embodiments, the flow detector 212ds may include a float level sensor, which uses a float (floating con) FC as a control element for detecting the liquid level and/or a liquid level switch. For example, as shown in fig. 5A, the flow rate monitor AMP may illuminate one light when the flow rate detector 212ds does not detect the flow rate (i.e., the float is not lifted), and illuminate two lights when the flow rate detector 212ds detects the flow rate (i.e., the float is lifted), so as to determine whether the operation status of the flow rate monitor 212d is normal.

referring to fig. 4 again, in some embodiments, the image capturing device 220 of the developing apparatus 20 can capture an image of the nozzle 212 a. For example, the photographing device 220 may be disposed on a wall of the processing chamber 220 to photograph the state of the nozzle 212a laterally. In other embodiments, the photographing device 220 may be disposed on the developing machine 210 to photograph the states of the nozzle 212a, the chemical solution DR and the semiconductor wafer W. The embodiment of the present invention does not limit the installation manner and the installation position of the photographing device 220 as long as the states of the photographing nozzle 212a, the chemical solution DR and the semiconductor wafer W can be clearly recognized during the developing process. The photographing device 220 may include a Charge Coupled Device (CCD) camera, and a lens of the camera may be disposed to face the nozzle 212a to photograph the nozzle 212a, the chemical solution DR and the semiconductor wafer W during the developing process through the lens to obtain an image signal. The image processor 240 may be coupled to the camera 220 to receive the image captured by the camera 220 and analyze the degree of immersion of the nozzle 212a in the chemical solution DR in the image. In some embodiments, the image processor 240 is, for example, an image sensor that can perform image recognition or comparison. In some embodiments, the image processor 240 may analyze and calculate the acquired image signal, and the determination criteria may be stored in a memory (not shown). For example, the determination criteria of the image processor 240 may be adjusted by command operations or the image processor 240 may be coupled to the developer 210, and the determination criteria may be determined by process parameters stored in a controller of the developer 210.

the illumination device 230 and the camera device 220 may be disposed around the wafer stage 202, and the illumination device 230 illuminates the nozzle 212a and the chemical solution DR to enhance the quality of the image captured or captured by the camera device 220. In some embodiments, the illumination device 230 and the photographing device 220 may be disposed at opposite sides of the nozzle 212a, respectively, to illuminate the nozzle 212a and the chemical solution DR. In some embodiments, the illumination device 230 and the camera device 220 may be disposed on the same side or adjacent to the nozzle 212a, as long as the illumination device 230 can provide sufficient light during the shooting process of the camera device 220 to analyze and recognize the image captured by the camera device 220, the configuration of the embodiment of the invention is not limited thereto. In some embodiments, the illumination device 230 can also illuminate the semiconductor wafer W simultaneously, so that the camera device 220 can receive the image signal reflected from the processing surface of the semiconductor wafer W.

Fig. 6 is a flowchart of a semiconductor process 30 according to an embodiment of the present invention, wherein the semiconductor process 30 is a flow of steps for determining whether the developing device 20 is abnormal when the developing device 20 is used to perform a developing process on a semiconductor wafer W, and fig. 7A to 7C are enlarged schematic diagrams of the semiconductor device of fig. 4 in different states of a dotted-line block a. Referring to the developing apparatus 20 of fig. 4, the flowchart of fig. 5 and the enlarged schematic diagrams of the developing apparatus 20 of fig. 7A to 7C, in step S310, while the chemical solution DR is supplied onto the semiconductor wafer W through the nozzle 212 of the developing apparatus 20, the first image and the second image of the nozzle 212a are sequentially captured by the photographing device 220. In some embodiments, the analysis regions in the images IMG may be set by the image processor 240. In some embodiments, the image processor 240 defines a baseline BL in the images IMG, such as a sufficient amount of chemical solution DR to cover the length of the nozzle 212 a. In some embodiments, after defining the baseline BL, the analysis region in the images IMG, such as the region between the baseline BL and the semiconductor wafer W to be covered by the chemical solution DR, may be further set according to the baseline BL. The baseline BL for the nozzle 212a to be covered by the chemical solution DR in the images IMG may be determined by matching process parameters (e.g., type, thickness, type of developer, etc.) with parameters (e.g., length and/or diameter, etc.) of the nozzle 212 a. For example, at least the chemical solution DR and the image of the nozzle 212a are included in these images IMG. In some embodiments, the images IMG may include images of the chemical solution DR, the nozzles 212a, and the processing surface of the semiconductor wafer W.

in step S320, the ratio of the chemical solution DR in the analysis regions of the first and second images is calculated to determine whether the developing device 20 is abnormal. For example, the degree of immersion of the nozzle 212a into the chemical solution DR in the images IMG can be analyzed by the image processor 240 to determine whether the chemical solution DR is sufficient for the developing process. In some embodiments, the analysis regions of the images IMG may be set by the image processor 240, and the ratio of the nozzles 212a immersed in the chemical solution DR and/or the ratio of the nozzles 212a not immersed in the chemical solution DR in the analysis regions may be calculated.

For example, when the nozzle 212a is immersed in the chemical solution DR to a predetermined value in the analysis area of the analyzed image IMG, that is, the ratio of the chemical solution DR in the nozzle 212a reaches the predetermined value, it indicates that there is no abnormality in the developing apparatus 20, the chemical solution DR is sufficiently developed, the valve 212dv is closed to stop supplying the chemical solution DR to the semiconductor wafer W, and the developing process is completed after the chemical solution DR removes the exposed photoresist layer PRa or the unexposed photoresist layer PRb on the semiconductor wafer W, i.e., step S330. When the ratio of the chemical solution DR in the analysis area of the analyzed image IMG is not shown to be the set value, which indicates that the chemical solution DR is not sufficiently supplied and abnormality may occur in the developing device 20, abnormality elimination is performed, i.e., step S340. The abnormality elimination includes, for example, detecting the operation of the liquid supply system 212 of the developing device 20 and repairing the liquid supply system 212. In some embodiments, when the analysis area of the analyzed image IMG shows that the ratio of the chemical solution DR is not equal to the predetermined value, the semiconductor wafer W having the abnormality may be cleaned, the chemical solution DR on the semiconductor wafer W may be removed, and the photoresist layer PR may be stripped for rework.

In some embodiments, after the chemical solution DR starts to be dispensed onto the processing surface (e.g., the photoresist layer PR) of the semiconductor wafer W through the nozzle 212a, the image IMG is captured by the camera 220 and transmitted to the image processor 240, and the image processor 240 determines whether the liquid level of the chemical solution DR in the nozzle 212a in the captured image IMG reaches the baseline BL. Taking fig. 7A to 7C as an example, first, during the preparation period or in a state where the chemical solution DR is just dispensed, the chemical solution is not present in the captured image IMG (as shown by the dotted line box of fig. 7A). Next, after the dispensing of the chemical solution DR is started (e.g., about 0.4 seconds), the captured image IMG (shown as the dashed box in fig. 7B) has some chemical solution DR, but the liquid level of the chemical solution DR in the nozzle 212a has not reached the baseline BL, which indicates that the chemical solution DR is not enough for developing, and the flow of the chemical solution DR may be in an unstable state. Subsequently, for example, about 0.4 seconds to about 1.7 seconds after the start of dispensing, when the liquid level of the chemical solution DR is stabilized, in the captured image IMG (as shown by the dashed box of fig. 7C), the liquid level of the chemical solution DR in the nozzle 212a reaches the baseline BL, indicating that there is a sufficient amount of the chemical solution DR to be developed.

Fig. 8 is a timing diagram of images captured by the camera of the semiconductor device according to the embodiment of the invention. Referring to fig. 8, during the period from the start of dispense STR to the END of dispense END, the photoresist layer PR formed on the semiconductor wafer W is gradually removed by the chemical solution DR to form a photoresist pattern on the semiconductor wafer W. For example, the nozzle 212a dispenses the chemical solution DR onto the semiconductor wafer W at the start time T1 and stops dispensing the chemical solution DR onto the semiconductor wafer W at the stop time Tn. The photographing device 220 may be configured to photograph a position where the photoresist layer PR is to be removed to capture the nozzle 212a, the chemical solution DR and the image IMG of the semiconductor wafer W during the period from the start of dispense STR to the END of dispense END, whereby the degree of removal of the photoresist layer PR may be determined according to the thickness of the chemical solution DR on the semiconductor wafer W and/or the thickness of the photoresist layer PR. During the period from the start of the distribution STR to the END of the distribution END, the photographing device 220 can continuously photograph or sequentially capture a plurality of images IMG and transmit the images IMG to the image processor 240, and the image processor 240 processes and calculates the analysis area AR in the images IMG.

in some embodiments, each image IMG may correspond to a capture time, and the camera 220 sequentially captures a plurality of images (e.g., including at least a first image IMG1 and a second image IMG2) during a time period from a start time T1 to a stop time Tn. In some embodiments, the first image IMG1 is captured by the camera device 220 at the start time T1, for example. In other embodiments, the first image IMG1 can be captured by the camera 220 at any time point between the start time T1 and the stop time Tn. In some alternative embodiments, the first image IMG1 may be captured by the camera device 220 at any point in the preparation period PT. The second image IMG2 is captured by the camera 220 at the stop time Tn, for example. In other embodiments, the second image IMG2 is captured by the camera 220 before the stop time Tn when the level of the chemical solution DR in the nozzle 212a reaches a steady state.

in some embodiments, the number of pixels of the analysis area AR of the images IMG where the nozzle 212a is immersed in the chemical solution DR may be calculated by the image processor 240 and/or the number of pixels of the analysis area AR of the images IMG where the nozzle 212a is not immersed in the chemical solution DR may be calculated. For example, if the number of pixels in the analysis area AR of the second image IMG2 is about 0, which indicates that the nozzle 212a in the analysis area AR is submerged in the chemical solution DR and reaches the set value, the dispensing of the chemical solution DR may be stopped. In other embodiments, the dispensing of the chemical solution DR may be stopped when the number of pixels in the analysis area AR of the second image IMG2 reaches a set value (may be greater than or equal to 0) calculated by the image processor 240, indicating that the chemical solution DR is sufficiently developed. It should be understood that the judgment criterion of the number of pixels may be determined by the size of the area of the visual analysis area AR.

In some embodiments, the photographing device 220 may selectively photograph the nozzle 212a and the semiconductor wafer W and an image IMG of the photoresist layer PR formed on the semiconductor wafer W during a setup period PT before the start of the distribution STR. In some embodiments, the image processor 240 may process the image IMG captured during the preparation period PT to locate the position of the nozzle 212a or the photoresist layer PR to be removed, and accordingly set the determination criteria (such as the height of the baseline BL and/or the size of the analysis area AR) of the image IMG. Since the embodiment of the present invention uses the camera device 220 to monitor the nozzle 212a and the chemical solution DR during the developing process, when a defect may be formed on the semiconductor wafer W due to an abnormality of the liquid supply system 212 during the developing process, the defect can be detected in real time by monitoring of the camera device 220 and image analysis of the image processor 240 and corrected appropriately, thereby shortening the time required for finding the cause of the defect generation and further improving the yield of the wafer. In addition, during the developing process, the camera 220 monitors the nozzle 212a to detect the abnormal condition of the apparatus, such as shortage of the chemical solution DR or breakage of the pipeline 212c for delivering the chemical solution DR, which may cause the chemical solution DR not to exist or insufficient in the analysis region AR of the second image IMG2, at an early stage, and the image processor 240 may determine that the second image IMG2 is a missing image. In some embodiments, after determining that the second image IMG2 is a missing image, the image processor 240 or a processing module (not shown) coupled to the image processor 240 may issue an alert and/or perform a modification procedure. In addition, the image captured by the camera 220 can record the developing process in real time for the technician to adjust the process parameters or further analyze.

According to an embodiment of the present invention, a semiconductor process is adapted to perform a developing process on a semiconductor wafer using a semiconductor apparatus. The semiconductor process comprises at least the following steps. While the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus, a first image and a second image of the nozzle are sequentially captured by a photographing device of the semiconductor apparatus. And calculating the proportion of the chemical solution in the analysis areas of the first image and the second image to judge whether the semiconductor equipment is abnormal. In some embodiments, calculating the ratio of the chemical solution in the analysis region includes stopping supplying the chemical solution to the semiconductor wafer when the ratio reaches a set value in the analysis region of the second image. In some embodiments, calculating the proportion of the chemical solution in the analysis region includes indicating that the semiconductor device is abnormal when the proportion in the analysis region of the second image does not reach a set value. In some embodiments, the ratio of chemical solution in the analysis region is calculated by calculating the number of pixels in the analysis region that the nozzle is immersed in the chemical solution and/or calculating the number of pixels in the analysis region that the nozzle is not immersed in the chemical solution.

according to an embodiment of the present invention, a semiconductor process is adapted to perform a developing process on a semiconductor wafer using a semiconductor apparatus. The semiconductor process comprises at least the following steps. During the chemical solution is supplied onto the semiconductor wafer through the nozzle of the semiconductor apparatus, images of the chemical solution, the nozzle, and the semiconductor wafer are photographed by the photographing device of the semiconductor apparatus. The degree of immersion of the nozzle into the chemical solution in the image is analyzed to determine whether the chemical solution is sufficient for the development process. In some embodiments, the semiconductor process further comprises stopping the supply of the chemical solution onto the semiconductor wafer when the nozzle is immersed in the chemical solution to a set value in the analyzed image. In some embodiments, sufficient light is provided by the illumination device of the semiconductor device to the image capture device during image capture by the image capture device. In some embodiments, analyzing the extent to which the nozzle is immersed in the chemical solution in the image includes setting an analysis area of the image and calculating a proportion of the analysis area in which the nozzle is immersed in the chemical solution and/or a proportion of the analysis area in which the nozzle is not immersed in the chemical solution. In some embodiments, the semiconductor process further comprises cleaning and reworking the chemical solution on the semiconductor wafer when the analyzed image shows an insufficient supply of the chemical solution.

according to an embodiment of the present invention, a semiconductor apparatus is adapted to perform a developing process on a semiconductor wafer. The semiconductor equipment comprises a developing machine table, a photographic device, an illuminating device and an image processor. The developing machine comprises a nozzle, wherein the nozzle is arranged above the semiconductor wafer to provide chemical solution to the semiconductor wafer. The camera device captures images of the nozzle and the chemical solution. The illumination device illuminates the nozzle and the chemical solution. The image processor is coupled to the camera device for receiving the image captured by the camera device and analyzing the degree of immersion of the nozzle into the chemical solution in the image.

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand the aspects of the present invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.