阅读说明：本技术 磁检测装置 (Magnetic detection device ) 是由 高野研一 平林启 斋藤祐太 于 2019-06-04 设计创作，主要内容包括：本发明的磁检测装置具备：第一磁检测元件,具有第一电阻值,第一电阻值因施加第一方向的第一磁场而增大且因施加第二方向的第二磁场而减小；以及第二磁检测元件,具有第二电阻值,第二电阻值因施加第一磁场而减小且因施加第二磁场而增大。第一磁检测元件和第二磁检测元件均包括第一磁阻效应膜和第二磁阻效应膜,第一磁阻效应膜具有第一长轴方向,第一长轴方向相对于第一方向以第一倾斜角度倾斜；第二磁阻效应膜与第一磁阻效应膜串联且具有第二长轴方向,第二长轴方向相对于第一方向以第二倾斜角度倾斜。而且,该磁检测装置满足条件表达式(1)和条件表达式(2)。(The magnetic detection device of the present invention includes: a first magnetic detection element having a first resistance value that increases by application of a first magnetic field in a first direction and decreases by application of a second magnetic field in a second direction; and a second magnetic detection element having a second resistance value that decreases by application of the first magnetic field and increases by application of the second magnetic field. The first magnetic detection element and the second magnetic detection element each include a first magnetoresistance effect film and a second magnetoresistance effect film, the first magnetoresistance effect film has a first long axis direction, and the first long axis direction is inclined at a first inclination angle with respect to the first direction; the second magnetoresistance effect film is connected in series with the first magnetoresistance effect film and has a second long axis direction, and the second long axis direction is inclined at a second inclination angle with respect to the first direction. Also, the magnetic detection apparatus satisfies conditional expression (1) and conditional expression (2).)

1. A magnetic detection device is provided with:

a first magnetic detection element having a first resistance value that increases by application of a first magnetic field in a first direction and decreases by application of a second magnetic field in a second direction opposite to the first direction; and

A second magnetic detection element having a second resistance value that decreases by application of the first magnetic field and increases by application of the second magnetic field,

The first magnetic detection element and the second magnetic detection element each include a first magnetoresistance effect film and a second magnetoresistance effect film, the first magnetoresistance effect film having a first long axis direction, the first long axis direction being inclined at a first inclination angle with respect to the first direction; the second magnetoresistance effect film is connected in series with the first magnetoresistance effect film and has a second long axis direction inclined at a second inclination angle with respect to the first direction,

the magnetic detection apparatus satisfies the following conditional expression (1) and conditional expression (2),

0°＜θ1＜90°……(1)

-90°＜θ2＜0°……(2)

Wherein the content of the first and second substances,

θ 1: a first inclination angle of the first long axis direction relative to the first direction;

θ 2: the second long axis direction has a second inclination angle relative to the first direction.

2. The magnetic detection device of claim 1,

Satisfying the following conditional expression (3) and conditional expression (4),

50°＜θ1＜72°……(3)

-72°＜θ2＜-50°……(4)。

3. The magnetic detection apparatus according to claim 1 or claim 2,

the first magnetoresistance effect film has a first magnetization pinned layer having a magnetization pinned in a first pinned direction substantially orthogonal to the first long axis direction,

The second magnetoresistance effect film has a second magnetization pinned layer having a magnetization pinned in a second pinned direction substantially orthogonal to the second long axis direction.

4. the magnetic detection apparatus according to claim 1 or claim 2,

The first magnetoresistance effect film and the second magnetoresistance effect film of the first magnetic detection element have a first magnetization pinned layer having a first magnetization pinned in the first direction,

the first magnetoresistance effect film and the second magnetoresistance effect film of the second magnetic detection element have a second magnetization fixed layer having a second magnetization fixed in the second direction.

5. The magnetic detection device according to any one of claim 1 to claim 4,

Further provided with a first conductor which is provided with a first conductor,

The first conductor may generate the first magnetic field using a first signal current flowing in a first current direction orthogonal to both the first direction and the second direction, and may generate the second magnetic field using a second signal current flowing in a second current direction opposite the first current direction.

6. the magnetic detection device according to any one of claim 1 to claim 4,

further provided with a second conductor which is provided with a second conductor,

The second conductor is electrically insulated from both the first magnetic detection element and the second magnetic detection element and faces both the first magnetic detection element and the second magnetic detection element,

a first feedback magnetic field that is opposite to the first magnetic field and includes a component that is applied to both the first magnetic detection element and the second magnetic detection element can be generated by supplying a first feedback current to a second conductor,

by supplying a second feedback current to a second conductor, a second feedback magnetic field can be generated, the second feedback magnetic field being opposite to the second magnetic field and including a component that is given to both the first magnetic detection element and the second magnetic detection element.

7. The magnetic detection device according to any one of claim 1 to claim 6,

The first magnetic detection element and the second magnetic detection element each include a plurality of the first magnetoresistance effect films and a plurality of the second magnetoresistance effect films,

the first inclination angles in the first long axis direction of the plurality of first magnetoresistance effect films are substantially equal,

The second inclination angles in the second long axis direction of the plurality of second magnetoresistance effect films are substantially equal.

Technical Field

The present invention relates to a magnetic detection device including a magnetic detection element.

Background

Heretofore, some magnetic detection devices using a magnetoresistance effect element have been proposed. For example, patent document 1 discloses a magnetic field detection device in which a center line direction extending in a direction in which a current flows in a conductor is different from a center line direction extending in a longitudinal direction of a magnetoresistive element.

Disclosure of Invention

However, with such a magnetic detection device, further improvement in detection accuracy is also required.

Therefore, it is desirable to provide a magnetic detection device that can exhibit high detection accuracy.

A magnetic detection device according to an embodiment of the present invention includes: a first magnetic detection element having a first resistance value that increases by application of a first magnetic field in a first direction and decreases by application of a second magnetic field in a second direction opposite to the first direction; and a second magnetic detection element having a second resistance value that decreases by application of the first magnetic field and increases by application of the second magnetic field. Here, the first magnetic detection element and the second magnetic detection element each include a first magnetoresistance effect film and a second magnetoresistance effect film, the first magnetoresistance effect film having a first long axis direction, the first long axis direction being inclined at a first inclination angle with respect to the first direction; the second magnetoresistance effect film is connected in series with the first magnetoresistance effect film and has a second long axis direction, and the second long axis direction is inclined at a second inclination angle with respect to the first direction. Also, the magnetic detection apparatus satisfies the following conditional expression (1) and conditional expression (2). Where θ 1 is a first inclination angle of the first long axis direction with respect to the first direction, and θ 2 is a second inclination angle of the second long axis direction with respect to the first direction.

0°＜θ1＜90°……(1)

-90°＜θ2＜0°……(2)

drawings

fig. 1 is a perspective view showing an example of the overall configuration of a magnetic detection device according to an embodiment of the present invention.

Fig. 2A is a plan view showing a planar structure of a main portion of the magnetic detection device shown in fig. 1.

fig. 2B is a plan view showing a plan structure of another main part of the magnetic detection device shown in fig. 1.

fig. 3A is a characteristic diagram showing a relationship between the switching magnetic field of the magnetization free layer of the magnetoresistance effect film shown in fig. 2A and 2B and the inclination angle of the magnetoresistance effect film.

fig. 3B is a characteristic diagram showing a relationship between an output of the magnetoresistance effect film shown in fig. 2A and 2B normalized with respect to the signal magnetic field and the inclination angle of the magnetoresistance effect film.

Fig. 4 is a circuit diagram of the magnetic detection device shown in fig. 1.

Fig. 5A is an exploded perspective view showing a stacked-layer structure of the first magnetoresistance effect film included in the first magnetic detection element shown in fig. 1.

fig. 5B is an exploded perspective view showing a stacked-layer structure of the second magnetoresistance effect film included in the first magnetic detection element shown in fig. 1.

Fig. 5C is an exploded perspective view showing a stacked-layer structure of the third magnetoresistance effect film included in the second magnetic detection element shown in fig. 1.

fig. 5D is an exploded perspective view showing a laminated structure of a fourth magnetoresistance effect film included in the second magnetic detection element shown in fig. 1.

Fig. 6A is an exploded perspective view showing another stacked-layer structure of the first magnetoresistance effect film included in the first magnetic detection element shown in fig. 1.

Fig. 6B is an exploded perspective view showing another stacked-layer structure of the second magnetoresistance effect film included in the first magnetic detection element shown in fig. 1.

fig. 6C is an exploded perspective view showing another stacked-layer structure of the third magnetoresistance effect film included in the second magnetic detection element shown in fig. 1.

Fig. 6D is an exploded perspective view showing another stacked-layer structure of the fourth magnetoresistance effect film included in the second magnetic detection element shown in fig. 1.

fig. 7A is a schematic plan view showing a set operation in the magnetic detection device shown in fig. 1.

Fig. 7B is a schematic sectional view showing a set operation in the magnetic detection device shown in fig. 1.

fig. 8A is a schematic plan view showing a reset operation in the magnetic detection device shown in fig. 1.

Fig. 8B is a schematic sectional view showing a reset operation in the magnetic detection device shown in fig. 1.

Fig. 9A is a characteristic diagram showing a deviation of an offset current value in the magnetic detection device of the embodiment.

Fig. 9B is a characteristic diagram showing a deviation of the offset current value in the magnetic detection device of the reference example.

Fig. 10A is a plan view showing a configuration of a main part of a magnetic detection device according to a first modification of the present invention.

Fig. 10B is a plan view showing a configuration of a main part of a magnetic detection device according to a second modification of the present invention.

Fig. 11 is a plan view showing a configuration of a main part of a magnetic detection device according to a third modification of the present invention.

Fig. 12A is a plan view showing a configuration of a main part of a magnetic detection device according to a fourth modification of the present invention.

Fig. 12B is a plan view showing another configuration of a main part of a magnetic detection device according to a fourth modification of the present invention.

fig. 13 is a plan view showing a configuration of a main part of the magnetic detection device of the reference example.

Description of the symbols

10 magnetic detector

1-4 magnetic detection element

5 bus

6 feedback wiring

7 bridge circuit

8-difference detector

9 arithmetic circuit

Hf feedback magnetic field

Hm detection object magnetic field

If feedback current

im detecting the object current

Major axis direction of J1-J4

MR 1-MR 4 magnetoresistance effect film

Detailed Description

Embodiments for carrying out the present invention will be described in detail below with reference to the accompanying drawings. The embodiments described below all represent preferred specific examples of the present invention. Therefore, the numerical values, shapes, materials, constituent elements, arrangement positions of constituent elements, connection forms, and the like shown in the following embodiments are merely examples, and are not intended to limit the present invention. Therefore, among the components of the following embodiments, components that are not recited in the independent claims indicating the uppermost concept of the present invention will be described as arbitrary components. Each drawing is a schematic diagram, and the illustration is not necessarily strict. In the drawings, substantially the same components are denoted by the same reference numerals, and redundant description is omitted or simplified. The following description is made in the order described below.

1. one embodiment

An example of a magnetic detection device provided with a bridge circuit having four magnetic detection elements is given.

2. Modification example

<1 > an embodiment

[ Structure of magnetic detection device 10 ]

First, the structure of a magnetic detection device 10 according to an embodiment of the present invention will be described with reference to fig. 1 to 4. Fig. 1 is a perspective view showing an overall configuration example of a magnetic detection device 10. Fig. 2A and 2B are plan views schematically showing a planar structure of a main part of the magnetic detection apparatus 10. Fig. 3A is a characteristic diagram showing a relationship between the switching magnetic field in the ± Y direction of the magnetization free layer of the magnetoresistance effect film shown in fig. 2A and 2B and the inclination angle of the magnetoresistance effect film. Fig. 3B is a characteristic diagram showing a relationship between an output of the magnetoresistance effect film shown in fig. 2A and 2B normalized with respect to the signal magnetic field and the inclination angle of the magnetoresistance effect film. Fig. 4 is a circuit diagram showing a circuit configuration of the magnetic detection device 10. The magnetic detection device 10 is used as, for example, a current sensor for detecting a current value flowing inside various electronic apparatuses with high accuracy.

the magnetic detection device 10 includes a bus 5, magnetic detection elements 1 to 4, and a plurality of feedback wirings 6, which are sequentially stacked in the Z-axis direction.

Here, magnetic detection element 1 and magnetic detection element 3 correspond to a specific example of the "first magnetic detection element" of the present invention, and magnetic detection element 2 and magnetic detection element 4 correspond to a specific example of the "second magnetic detection element" of the present invention.

(bus 5)

The bus 5 Is, for example, a conductor extending in the Y-axis direction, and the signal current Is supplied to the bus 5. The signal current Is a detection target of the magnetic detection device 10. The main constituent material of the bus lines 5 is, for example, a highly conductive material such as Cu (copper). The bus bar 5 may be made of an alloy containing Fe (iron) and Ni (nickel) or stainless steel. For example, by flowing the signal current Is1 in the + Y direction inside the bus bar 5, the signal magnetic field Hs1 can be generated around the bus bar 5. Further, by flowing the signal current Is2 in the-Y direction inside the bus bar 5, the signal magnetic field Hs2 can be generated around the bus bar 5. The signal magnetic field Hs1 is applied to the magnetic detection elements 1 to 4 in the + X direction. On the other hand, the signal magnetic field Hs2 is applied to the magnetic detection elements 1 to 4 in the-X direction.

here, the bus 5 corresponds to a specific example of the "first conductor" of the present invention. The + Y direction corresponds to a specific example of the "first current direction" of the present invention, the signal current Is1 corresponds to a specific example of the "first signal current" of the present invention, and the signal magnetic field Hs1 corresponds to a specific example of the "first magnetic field" of the present invention. the-Y direction corresponds to a specific example of the "second current direction" in the present invention, the signal current Is2 corresponds to a specific example of the "second signal current" in the present invention, and the signal magnetic field Hs2 corresponds to a specific example of the "second magnetic field" in the present invention. The flowing directions of the signal current Is1 and the signal current Is2 are orthogonal to the application directions of the signal magnetic field Hs1 and the signal magnetic field Hs2 to the magnetic sensing elements 1 to 4.

(feedback Wiring 6)

The plurality of feedback wirings 6 are electrically insulated from each of the magnetic detection elements 1 to 4 and arranged in a manner to oppose each of the magnetic detection elements 1 to 4, the plurality of feedback wirings 6 extending in the + Y-axis direction along the bus 5. As with the bus line 5, the main constituent material of the feedback wiring 6 is, for example, a highly conductive material such as Cu (copper). For example, by flowing the feedback current If1 in the + Y direction inside the feedback wiring 6, the feedback magnetic field Hf1 can be generated around the feedback wiring 6. By flowing the feedback current If2 in the-Y direction inside the feedback wiring 6, the feedback magnetic field Hf2 can be generated around the feedback wiring 6. The feedback magnetic field Hf1 is applied to the magnetic detecting elements 1 to 4 in the-X direction. On the other hand, the feedback magnetic field Hf2 is applied to the magnetic sensors 1 to 4 in the + X direction. That is, when the feedback magnetic field Hf1 is viewed from the magnetic sensing elements 1 to 4, the feedback magnetic field Hf1 is applied to the magnetic sensing elements 1 to 4 in the direction opposite to the signal magnetic field Hs1, and when the feedback magnetic field Hf2 is viewed from the magnetic sensing elements 1 to 4, the feedback magnetic field Hf2 is applied to the magnetic sensing elements 1 to 4 in the direction opposite to the signal magnetic field Hs 2. In this embodiment, five feedback wirings 6 arranged in the X-axis direction are shown as an example, but the number of feedback wirings 6 is not limited to this, and may be only one.

Here, the feedback wiring 6 corresponds to a specific example of the "second conductor" of the present invention. Further, the feedback current If1 is the "first feedback current" of the present invention, and the feedback current If2 is the "second feedback current" of the present invention. Further, the feedback magnetic field Hf1 is the "first feedback magnetic field" of the present invention, and the feedback magnetic field Hf2 is the "second feedback magnetic field" of the present invention.

(magnetic detecting elements 1 to 4)

the magnetic sensing elements 1 and 3 are first magnetic sensing elements, and have resistance values that increase when a signal magnetic field Hs1 in the + X direction is applied and decrease when a signal magnetic field Hs2 in the-X direction is applied. On the other hand, the magnetic detection elements 2 and 4 are second magnetic detection elements, and have resistance values that decrease when the signal magnetic field Hs1 in the + X direction is applied and increase when the signal magnetic field Hs2 in the-X direction is applied.

As shown in fig. 2A, each of the magnetic detection elements 1 and 3 includes one or more magnetoresistance effect films MR1 and one or more magnetoresistance effect films MR2, the magnetoresistance effect film MR1 has a long axis direction J1, the long axis direction J1 is inclined at an inclination angle θ 1 with respect to the + X direction, the magnetoresistance effect film MR2 is connected in series with the magnetoresistance effect film MR1 and has a long axis direction J2, and the long axis direction J2 is inclined at an inclination angle θ 2 with respect to the + X direction. Fig. 2A illustrates an example in which the magnetoresistive effect films MR1 and MR2 are alternately arranged two by two along the Y axis in the magnetic detection elements 1 and 3, but the present invention is not limited thereto. That is, the magnetic detection elements 1 and 3 may be: one magnetoresistive film MR1 and one magnetoresistive film MR2 are provided; three or more magnetoresistive films MR1 and MR2 are provided, respectively. For example, the number of the magnetoresistive effect films MR1 included in the magnetic detection element 1 may be equal to or different from the number of the magnetoresistive effect films MR 2. However, the difference between the number of the magnetoresistance effect films MR1 and the number of the magnetoresistance effect films MR2 is preferably within 20%. In the magnetic detection element 1, the sum of the number of the magnetoresistive effect films MR1 and the number of the magnetoresistive effect films MR2 may be an even number or an odd number. Thus, for example, in the magnetic detection element 1, it may be: the number of the magnetoresistance effect films MR1 is 8, and the number of the magnetoresistance effect films MR2 is 10; the number of the magnetoresistance effect films MR1 was 9, and the number of the magnetoresistance effect films MR2 was 8. The magnetic detection element 3 is also similar to the magnetic detection element 1.

Note that the magnetoresistance effect film MR1 corresponds to a specific example of the "first magnetoresistance effect film" of the present invention, and the magnetoresistance effect film MR2 corresponds to a specific example of the "second magnetoresistance effect film" of the present invention.

further, the magnetoresistance effect film MR1 and the magnetoresistance effect film MR2 in the magnetic detection elements 1, 3 satisfy the following conditional expression (1) and conditional expression (2). Here, θ 1 is an inclination angle of the long axis direction J1 with respect to the + X direction, and θ 2 is an inclination angle of the long axis direction J2 with respect to the + X direction. In conditional expression (1) and conditional expression (2), assuming that the + X direction is 0 °, an angular range until the rotation from the + X direction to the-X direction to the right is represented by a positive value, and an angular range until the rotation from the + X direction to the left is represented by a negative value.

0°＜θ1＜90°……(1)

-90°＜θ2＜0°……(2)

Preferably, the magnetoresistance effect film MR1 and the magnetoresistance effect film MR2 in the magnetic detection elements 1, 3 further satisfy the following conditional expression (3) and conditional expression (4). Note that, in conditional expression (3) and conditional expression (4), similarly, assuming that the + X direction is 0 °, an angular range from the + X direction to the-X direction to the right is represented by a positive value, and an angular range from the + X direction to the left is represented by a negative value.

50°＜θ1＜72°……(3)

-72°＜θ2＜-50°……(4)

By satisfying θ 1 < 72 ° in conditional expression (3) or satisfying-72 ° < θ 2 in conditional expression (4), it is possible to invert the magnetization JS13 and the like (described later) of the magnetization free layer S13 and the like (described later) in the ± Y direction with a relatively small inversion magnetic field of 30mT or less, as shown in fig. 3A, for example. Therefore, the signal currents Is1 and Is2 can be reduced, which Is preferable. Fig. 3A is a characteristic diagram showing a relationship between the tilt angle θ 1[ ° ] shown on the horizontal axis and the switching magnetic field [ mT ] which is a magnetic field generated by switching the magnetization JS13 of the magnetization free layer S13 shown on the vertical axis. The characteristic diagrams shown in fig. 3A and 3B are examples of the magnetoresistance effect film MR having a planar shape of an ellipse whose dimension in the major axis direction is 5 μm and whose dimension in the minor axis direction is 0.6 μm, and in which the inclination angle θ 1 is 0 ° in a state where the major axis is parallel to the + X axis. The planar shape of the magnetoresistive effect film MR is not limited to an ellipse, and may be a rectangle, a rhombus, or a shape in which a rectangle and a rhombus are superimposed. Here, the ratio of the major axis to the minor axis that affects the switching magnetic field, i.e., the aspect ratio, is preferably 4 to 20. This is because if the aspect ratio is less than 4, hysteresis is exhibited with respect to the external magnetic field in the + X axis direction (signal magnetic field Hs1 and signal magnetic field Hs 2). On the other hand, if the aspect ratio exceeds 20, the switching magnetic field required for switching the magnetization JS13 of the magnetization free layer S13 or the like exceeds 30 mT.

Moreover, by making it possible to satisfy 50 ° < θ 1 in conditional expression (3) or θ 2 < -50 ° in conditional expression (4), it is possible to suppress both the output drop within 20% and the output variation, as shown in fig. 3B, for example. Therefore, good sensitivity to the signal magnetic fields Hs1 and Hs2 can be maintained. Fig. 3B is a characteristic diagram showing a relationship between the tilt angle θ 1[ ° ] shown on the horizontal axis and the output change [ - ] to the signal magnetic field shown on the vertical axis. The output change on the vertical axis is shown by a normalized value with a maximum value of 100.

Similarly, as shown in fig. 2B, each of the magnetic detection elements 2 and 4 includes a magnetoresistance effect film MR3 and a magnetoresistance effect film MR4, the magnetoresistance effect film MR3 has a long axis direction J3, the long axis direction J3 is inclined at an inclination angle θ 3 with respect to the + X direction, the magnetoresistance effect film MR4 is connected in series with the magnetoresistance effect film MR3 and has a long axis direction J4, and the long axis direction J4 is inclined at an inclination angle θ 4 with respect to the + X direction. Fig. 2B illustrates an example in which the magnetoresistive effect films MR3 and MR4 are alternately arranged two by two along the Y axis in the magnetic detection elements 2 and 4, but the present invention is not limited thereto. That is, the magnetic detection elements 2 and 4 may be: one magnetoresistive film MR3 and one magnetoresistive film MR4 are provided; three or more magnetoresistive films MR3 and MR4 are provided, respectively. For example, the number of the magnetoresistive effect films MR3 included in the magnetic detection element 2 may be equal to or different from the number of the magnetoresistive effect films MR 4. However, the difference between the number of the magnetoresistance effect films MR3 and the number of the magnetoresistance effect films MR4 is preferably within 20%. In the magnetic detection element 2, the sum of the number of the magnetoresistive effect films MR3 and the number of the magnetoresistive effect films MR4 may be an even number or an odd number. Thus, for example, in the magnetic detection element 2, there may be: the number of the magnetoresistance effect films MR3 is 8, and the number of the magnetoresistance effect films MR4 is 10; the number of the magnetoresistance effect films MR3 was 9, and the number of the magnetoresistance effect films MR4 was 8. The magnetic detection element 4 is also similar to the magnetic detection element 2.

Note that the magnetoresistance effect film MR3 corresponds to a specific example of the "first magnetoresistance effect film" of the present invention, and the magnetoresistance effect film MR4 corresponds to a specific example of the "second magnetoresistance effect film" of the present invention.

Further, the magnetoresistance effect films MR3 and MR4 of the magnetic detection elements 2 and 4 satisfy the following conditional expression (5) and conditional expression (6). Here, θ 3 is an inclination angle of the major axis direction J3 with respect to the + X direction, and θ 4 is an inclination angle of the major axis direction J4 with respect to the + X direction. In conditional expression (5) and conditional expression (6), assuming that the + X direction is 0 °, an angular range until the rotation from the + X direction to the-X direction to the right is represented by a positive value, and an angular range until the rotation from the + X direction to the left is represented by a negative value.

0°＜θ3＜90°……(5)

-90°＜θ4＜0°……(6)

Preferably, the magnetoresistance effect film MR3 and the magnetoresistance effect film MR4 in the magnetic detection elements 2, 4 further satisfy the following conditional expression (7) and conditional expression (8). In conditional expression (7) and conditional expression (8), assuming that the + X direction is 0 °, an angular range from the + X direction to the-X direction to the right is represented by a positive value, and an angular range from the + X direction to the left is represented by a negative value.

50°＜θ3＜72°……(7)

-72°＜θ4＜-50°……(8)

Fig. 5A is an exploded perspective view showing a laminated structure of the magnetoresistive effect film MR1 included in the magnetic detection elements 1, 3. Fig. 5B is an exploded perspective view showing a laminated structure of the magnetoresistive effect film MR2 included in the magnetic detection elements 1, 3. Fig. 5C is an exploded perspective view showing a laminated structure of the magnetoresistive effect film MR3 included in the magnetic detection elements 2, 4. Fig. 5D is an exploded perspective view showing a laminated structure of the magnetoresistive effect film MR4 included in the magnetic detection elements 2, 4.

As shown in fig. 5A to 5D, the magnetoresistance effect films MR1 to MR4 are spin valve structures, and are formed by stacking a plurality of functional films including magnetic layers. Specifically, as shown in fig. 5A, the magnetoresistance effect film MR1 is formed by stacking a magnetization pinned layer S11, an intermediate layer S12, and a magnetization free layer S13 in this order in the Z-axis direction. The magnetization pinned layer S11 has a magnetization JS11 pinned in the + X direction, the intermediate layer S12 is a nonmagnetic body, and the magnetization free layer S13 has a magnetization JS13 which changes in accordance with a change in the magnetic flux density of the signal magnetic fields Hs1 and Hs 2. The magnetization pinned layer S11, the intermediate layer S12, and the magnetization free layer S13 are all thin films extending in the XY plane. Therefore, the direction of the magnetization JS13 of the magnetization free layer S13 can be rotated in the XY plane.

As shown in fig. 5B, the magnetoresistance effect film MR2 is formed by stacking a magnetization pinned layer S21, an intermediate layer S22, and a magnetization free layer S23 in this order in the Z-axis direction. The magnetization pinned layer S21 has a magnetization JS21 pinned in the + X direction, the intermediate layer S22 is a nonmagnetic body, and the magnetization free layer S23 has a magnetization JS23 which changes in accordance with a change in the magnetic flux density of the signal magnetic fields Hs1 and Hs 2. The magnetization pinned layer S21, the intermediate layer S22, and the magnetization free layer S23 are all thin films extending in the XY plane. Therefore, the direction of the magnetization JS23 of the magnetization free layer S23 can be rotated in the XY plane.

As shown in fig. 5C, the magnetoresistance effect film MR3 is formed by stacking a magnetization pinned layer S31, an intermediate layer S32, and a magnetization free layer S33 in this order in the Z-axis direction. The magnetization pinned layer S31 has a magnetization JS31 pinned in the-X direction, the intermediate layer S32 is a nonmagnetic body, and the magnetization free layer S33 has a magnetization JS33 which changes in accordance with a change in the magnetic flux density of the signal magnetic fields Hs1 and Hs 2. The magnetization pinned layer S31, the intermediate layer S32, and the magnetization free layer S33 are all thin films extending in the XY plane. Therefore, the direction of the magnetization JS33 of the magnetization free layer S33 can be rotated in the XY plane.

as shown in fig. 5D, the magnetoresistance effect film MR4 is formed by stacking a magnetization pinned layer S41, an intermediate layer S42, and a magnetization free layer S43 in this order in the Z-axis direction. The magnetization pinned layer S41 has a magnetization JS41 pinned in the-X direction, the intermediate layer S42 is a nonmagnetic body, and the magnetization free layer S43 has a magnetization JS43 which changes with a change in the magnetic flux density of the signal magnetic fields Hs1 and Hs 2. The magnetization pinned layer S41, the intermediate layer S42, and the magnetization free layer S43 are all thin films extending in the XY plane. Therefore, the direction of the magnetization JS43 of the magnetization free layer S43 can be rotated in the XY plane.

In this way, the magnetization pinned layers S11 and S21 in the magnetoresistive effect films MR1 and MR2 have magnetizations JS11 and J21 pinned in the + X direction, respectively, whereas the magnetization pinned layers S31 and S41 in the magnetoresistive effect films MR3 and MR4 have magnetizations JS31 and J41 pinned in the-X direction, respectively.

The magnetizations JS11 and JS21 correspond to a specific example of the "first magnetization" of the present invention, and the magnetization pinned layers S11 and S21 correspond to a specific example of the "first magnetization pinned layer" of the present invention. The magnetizations JS31 and JS41 correspond to a specific example of the "second magnetization" of the present invention, and the magnetization pinned layers S31 and S41 correspond to a specific example of the "second magnetization pinned layer" of the present invention.

In the magnetoresistive effect films MR1 to MR4, the magnetization pinned layers S11, S21, S31, and S41, the intermediate layers S12, S22, S32, and S42, and the magnetization free layers S13, S23, S33, and S43 may all have a single-layer structure or may all have a multilayer structure including a plurality of layers. For example, as shown in fig. 6A to 6D, the magnetization pinned layers S11, S21, S31, and S41 may have a laminated ferromagnetic structure in the magnetoresistance effect films MR1 to MR 4. Specifically, as shown in fig. 6A, the magnetization pinned layer S11 of the magnetoresistance effect film MR1 may be a two-layer structure including a magnetization pinned film S11A and a magnetization pinned film S11B, the magnetization pinned film S11A having a magnetization JS11A, and the magnetization pinned film S11B having a magnetization JS 11B. The direction of the magnetization JS11A is opposite to the direction of the magnetization JS 11B. Specifically, the magnetization JS11A is fixed in the + X direction, and the magnetization JS11B is fixed in the-X direction. Likewise, as shown in fig. 6B, the magnetization pinned layer S21 of the magnetoresistance effect film MR2 may be a two-layer structure including a magnetization pinned film S21A and a magnetization pinned film S21B, the magnetization pinned film S21A having a magnetization JS21A, and the magnetization pinned film S21B having a magnetization JS 21B. The direction of the magnetization JS21A is opposite to the direction of the magnetization JS 21B. Specifically, the magnetization JS21A is fixed in the + X direction, and the magnetization JS21B is fixed in the-X direction. As shown in fig. 6C, the magnetization pinned layer S31 of the magnetoresistance effect film MR3 may be a two-layer structure including a magnetization pinned film S31A and a magnetization pinned film S31B, the magnetization pinned film S31A having a magnetization JS31A, and the magnetization pinned film S31B having a magnetization JS 31B. The direction of the magnetization JS31A is opposite to the direction of the magnetization JS 31B. Specifically, the magnetization JS31A is fixed in the-X direction, and the magnetization JS31B is fixed in the + X direction. Further, as shown in fig. 6D, the magnetization pinned layer S41 of the magnetoresistance effect film MR4 may be a two-layer structure including a magnetization pinned film S41A and a magnetization pinned film S41B, the magnetization pinned film S41A having a magnetization JS41A, and the magnetization pinned film S41B having a magnetization JS 41B. The direction of the magnetization JS41A is opposite to the direction of the magnetization JS 41B. Specifically, the magnetization JS41A is fixed in the-X direction, and the magnetization JS41B is fixed in the + X direction.

The magnetization pinned layers S11, S21, S31, and S41 are made of a ferromagnetic material such as cobalt (Co), a cobalt iron alloy (CoFe), or a cobalt iron boron alloy (CoFeB). In the magnetoresistive effect films MR1 to MR4, antiferromagnetic layers (not shown) may be provided on the sides adjacent to the magnetization pinned layers S11, S21, S31, and S41 and opposite to the intermediate layers S12, S22, S32, and S42, respectively. The antiferromagnetic layer is made of antiferromagnetic material such as platinum manganese (PtMn) alloy or iridium manganese (IrMn) alloy. The antiferromagnetic layer is in a state where the spin magnetic moment in the + X direction and the spin magnetic moment in the-X direction are completely cancelled out in the magnetoresistance effect films MR1 to MR4, and functions as follows: the direction of the magnetization JS11, JS21 of the adjacent magnetization pinned layers S11, S21 is pinned to the + X direction, or the direction of the magnetization JS31, JS41 of the adjacent magnetization pinned layers S31, S41 is pinned to the-X direction.

If the spin valve structure functions as a Magnetic Tunnel Junction (MTJ) film, the intermediate layers S12, S22, S32, S42 are, for example, nonmagnetic Tunnel barrier layers made of magnesium oxide (MgO), and the thickness thereof is so thin as to allow a tunneling current based on quantum mechanics to pass. The tunnel barrier layer made of MgO can be obtained by, for example, the following processes: sputtering a target made of MgO; oxidation treatment of a magnesium (Mg) thin film; reactive sputtering process of sputtering magnesium in an oxygen atmosphere. The intermediate layers S12, S22, S32, and S42 may be made of various oxides or nitrides of aluminum (Al), tantalum (Ta), and hafnium (Hf) other than MgO. The intermediate layers S12, S22, S32, and S42 may be made of, for example, a platinum group element such as ruthenium (Ru), gold (Au), or a nonmagnetic metal such as copper (Cu). In this case, the spin valve structure functions as a Giant Magnetoresistive (GMR) film.

The magnetization free layers S13, S23, S33, and S43 are soft ferromagnetic layers and are formed of substantially the same material. The magnetization free layers S13, S23, S33, and S43 are made of, for example, a cobalt-iron alloy (CoFe), a nickel-iron alloy (NiFe), or a cobalt-iron-boron alloy (CoFeB).

(bridge circuit 7)

As shown in FIG. 4, four magnetic detecting elements 1 to 4 are bridged to form a bridge circuit 7. The magnetic detection elements 1 to 4 can detect changes in a signal magnetic field Hs1 or a signal magnetic field Hs2 as a detection object. As described above, the resistance values of the magnetic detection elements 1 and 3 increase when the signal magnetic field Hs1 in the + X direction is applied, and decrease when the signal magnetic field Hs2 in the-X direction is applied. On the other hand, the resistance values of the magnetic detection elements 2 and 4 are decreased by application of the signal magnetic field Hs1 in the + X direction and increased by application of the signal magnetic field Hs2 in the-X direction. Therefore, the magnetic detection elements 1, 3 and the magnetic detection elements 2, 4 output different signals that are, for example, 180 ° out of phase with each other in accordance with a change in the signal magnetic field Hs1 (or the signal magnetic field Hs 2).

As shown in fig. 4, magnetic sensor 1 and magnetic sensor 2 connected in series, and magnetic sensor 3 and magnetic sensor 4 connected in series are connected in parallel to each other to form bridge circuit 7. More specifically, in the bridge circuit 7, one end of the magnetic detection element 1 is connected to one end of the magnetic detection element 2 at a connection point P1, one end of the magnetic detection element 3 is connected to one end of the magnetic detection element 4 at a connection point P2, the other end of the magnetic detection element 1 is connected to the other end of the magnetic detection element 4 at a connection point P3, and the other end of the magnetic detection element 2 is connected to the other end of the magnetic detection element 3 at a connection point P4. Here, the connection point P3 is connected to the power supply terminal Vcc, and the connection point P4 is connected to the ground terminal GND. The connection point P1 is connected to the output terminal Vout1, and the connection point P2 is connected to the output terminal Vout 2. The output terminal Vout1 and the output terminal Vout2 are connected to, for example, input-side terminals of the differential detector 8, respectively. The difference detector 8 detects the following potential difference and outputs the potential difference to the arithmetic circuit 9 as a difference signal S. The potential difference is a potential difference between the connection point P1 and the connection point P2 (a difference in voltage drop generated in each of the magnetic detection element 1 and the magnetic detection element 4) when a voltage is applied between the connection point P3 and the connection point P4.

note that arrows marked with reference symbols JS11, JS21 in fig. 4 schematically show the directions of the magnetizations JS11, JS21 (fig. 5A, 5B) of the magnetization pinned layers S11, S21 (fig. 5A, 5B) of the magnetic detection elements 1, 3, respectively. In fig. 4, arrows marked with JS31 and JS41 schematically show directions of magnetizations JS31 and JS41 (fig. 5C and 5D) of the magnetization pinned layers S31 and S41 (fig. 5C and 5D) of the magnetic detection elements 2 and 4, respectively. As shown in fig. 4, the direction of magnetization JS11, JS21 is opposite to the direction of magnetization JS31, JS 41. That is, fig. 4 shows: the resistance value of the magnetic detection element 1 and the resistance value of the magnetic detection element 3 change (for example, increase or decrease) in the same direction in response to changes in the signal magnetic fields Hs1 and Hs 2. Moreover, fig. 4 also shows: both the resistance value of the magnetic detection element 2 and the resistance value of the magnetic detection element 4 change (decrease or increase) in the direction opposite to the change in the resistance values of the magnetic detection elements 1 and 3 in response to the change in the signal magnetic fields Hs1 and Hs 2.

A current I10 from a power supply terminal Vcc is divided into a current I1 and a current I2 at a connection point P3, and the current I1 or the current I2 is supplied to magnetic detection elements 1 to 4 constituting a bridge circuit 7. The signals e1, e2 taken out from the connection points P1, P2 of the bridge circuit 7, respectively, flow into the differential detector 8.

[ operation and action of magnetic detection device 10 ]

In the magnetic detection device 10 of the present embodiment, changes in the signal magnetic fields Hs1 and Hs2 generated by the signal currents Is1 and Is2 flowing through the bus 5 can be detected.

(detection action)

In the magnetic detection device 10, first, a state in which the signal magnetic fields Hs1 and Hs2 are not applied is considered. Here, a current I10 is caused to flow into the bridge circuit 7, and the respective resistance values of the magnetic detection elements 1 to 4 at this time are set to r1 to r 4. Current I10 from power supply terminal Vcc splits both current I1 and current I2 at connection point P3. Here, the current I1 flowing through the magnetic detection element 1 and the magnetic detection element 2 and the current I2 flowing through the magnetic detection element 4 and the magnetic detection element 3 are merged at the connection point P4. At this time, the potential difference V between the connection point P3 and the connection point P4 can be expressed by the following equation.

V＝I1×r1+I1×r2＝I2×r4+I2×r3

＝I1×(r1+r2)＝I2×(r4+r3)………(9)

Further, the potential V1 at the connection point P1 and the potential V2 at the connection point P2 can be expressed by the following expressions, respectively.

V1＝V-I1×r1

V2＝V-I2×r4

Therefore, the potential difference V0 between the connection point P1 and the connection point P2 is:

V0＝V2-V1

＝(V-I2×r4)-(V-I1×r1)

＝I1×r1-I2×r4……(10)。

Here, according to equation (9), it is possible to obtain:

V0＝r1/(r1+r2)×V-r4/(r4+r3)×V

＝{r1/(r1+r2)-r4/(r4+r3)}×V……(11)。

In the bridge circuit 7, after the signal magnetic fields Hs1 and Hs2 are applied, the resistance change amount is obtained by measuring the potential difference V0 between the connection point P2 and the connection point P1 shown in the above formula (11). Here, if the signal magnetic fields Hs1 and Hs2 are applied, the resistance values R1 to R4 of the magnetic detection elements 1 to 4 change by the change amounts Δ R1 to Δ R4, that is, if the signal magnetic fields Hs1 and Hs2 are applied, the resistance values R1 to R4 are:

R1＝r1+ΔR1

R2＝r2+ΔR2

R3＝r3+ΔR3

R4＝r4+ΔR4

Then, according to equation (11), the potential difference V0 when the signal magnetic fields Hs1 and Hs2 are applied is:

V0＝{(r1+ΔR1)/(r1+ΔR1+r2+ΔR2)-(r4+ΔR4)/(r4+ΔR4+r3+ΔR3)}×V……(12)。

Since this magnetic sensor 10 is configured such that the resistance values R1, R3 of the magnetic sensing elements 1, 3 and the resistance values R2, R4 of the magnetic sensing elements 2, 4 exhibit reverse changes, the change amount Δ R4 and the change amount Δ R1 cancel each other out, and the change amount Δ R3 and the change amount Δ R2 cancel each other out. Therefore, when the signal magnetic fields Hs1 and Hs2 are compared, the denominator in each item of equation (12) is hardly increased. On the other hand, regarding the numerator in each item, the signs of the change amount Δ R1 and the change amount Δ R4 are necessarily opposite, and therefore do not increase or decrease.

Assuming that all the magnetic detection elements 1 to 4 have the same characteristics, that is, R1 ═ R2 ═ R3 ═ R4 ═ R, and Δ R1 ═ Δ R2 ═ Δ R3 ═ Δ R4 ═ Δ R, equation (12) is:

V0＝{(R+ΔR)/(2×R)-(R-ΔR)/(2×R)}×V

＝(ΔR/R)×V。

Thus, with respect to the characteristic values such as Δ R/R, if the known magnetic detection elements 1 to 4 are used, the magnitudes of the signal magnetic fields Hs1 and Hs2 can be measured, and the magnitudes of the signal currents Is1 and Is2 that generate the signal magnetic fields Hs1 and Hs2 can be estimated.

(set and reset actions)

In such a magnetic detection device, it is preferable that the magnetization of the magnetization free layer in each magnetic detection element is aligned in a predetermined direction before the detection operation of the signal magnetic field is performed. This is to more accurately perform the detection operation of the signal magnetic field. Specifically, an external magnetic field of known magnitude is applied alternately in a prescribed direction and a direction opposite thereto. This is called a set and reset action of the magnetization free layer.

In the magnetic detection device 10 of the present embodiment, for example, as shown in fig. 7A and 7B, the feedback current If1 in the + Y direction is supplied to each of the plurality of feedback wirings 6, whereby the set operation is completed. As shown in FIG. 7B, by supplying a feedback current If1 in the + Y direction, a feedback magnetic field Hf1 in the-X direction can be applied to the magnetoresistive effect films MR1 to MR4 of the magnetic detection elements 1 to 4. Thus, the magnetization free layers S13, S23, S33, and S43 in the magnetoresistive effect films MR1 to MR4 are oriented in the directions of the arrows shown in fig. 7A, and the set operation is completed. On the other hand, as shown in fig. 8A and 8B, for example, the reset operation is completed by supplying a feedback current If2 in the-Y direction to each of the plurality of feedback wirings 6. As shown in FIG. 8B, by supplying a feedback current If2 in the-Y direction, a feedback magnetic field Hf2 in the + X direction can be applied to the magnetoresistive effect films MR1 to MR4 of the magnetic detection elements 1 to 4. Thus, the magnetization free layers S13, S23, S33, and S43 in the magnetoresistive effect films MR1 to MR4 are oriented in the directions of the arrows shown in fig. 8A, and the reset operation is completed.

In the present invention, the magnetic detection elements are arranged so as to be separated from each other by a magnetic field, and the magnetic field is applied to the magnetic detection elements. This very small amount of output is referred to as an offset value. For example, the magnetization direction of the magnetization free layer may be reversed due to external factors such as humidity, heat, stress change, and a disturbance magnetic field applied to the magnetoresistive films MR1 to MR4 in the longitudinal direction, and as a result, the offset value may be changed. The set operation and the reset operation for the magnetization free layer are methods for effectively restoring the offset value, which has unexpectedly changed due to the external factors, to the original offset value with high reproducibility. It is preferable that the absolute value of the offset value after the set operation and the absolute value of the offset value after the reset operation are as small as possible.

in this regard, in the magnetic detection device 10 of the present embodiment, the deviation between the offset value after the set operation and the offset value after the reset operation can be sufficiently reduced. This is because each of the magnetic detection elements 1 and 3 includes the magnetoresistance effect film MR1 and the magnetoresistance effect film MR2, and each of the magnetic detection elements 2 and 4 includes the magnetoresistance effect film MR3 and the magnetoresistance effect film MR 4. Here, the magnetoresistance effect film MR1 has a long axis direction J1 and a long axis direction J1 inclined at an angle θ 1 with respect to the signal magnetic fields Hs1 and Hs2, and the magnetoresistance effect film MR2 has a long axis direction J2 and a long axis direction J2 inclined at an angle θ 2 with respect to the signal magnetic fields Hs1 and Hs 2. The magnetoresistance effect film MR3 has a long axis direction J3 and a long axis direction J3 inclined at an angle θ 3 with respect to the signal magnetic fields Hs1 and Hs2, and the magnetoresistance effect film MR4 has a long axis direction J4 and a long axis direction J4 inclined at an angle θ 4 with respect to the signal magnetic fields Hs1 and Hs 2.

[ Effect of magnetic detecting device 10 ]

as described above, the magnetic detection device 10 according to the present embodiment can exhibit high detection accuracy.

[ Experimental example ]

The following describes embodiments of the present invention.

(examples)

32 samples are prepared for the magnetic detection device 10 shown in fig. 1 and the like, and the offset value after the set operation described with reference to fig. 7A and 7B and the offset value after the reset operation described with reference to fig. 8A and 8B are measured for each sample. The results are shown in fig. 9A. In fig. 9A, the horizontal axis represents the sample number, and the vertical axis represents the offset value. The offset value after the set operation is indicated by a legend ●, and the offset value after the reset operation is indicated by a legend Δ.

(reference example)

the reference example was used for comparison with the magnetic detection device 10, and as shown in fig. 13, 32 samples were prepared for a magnetic detection device having only magnetic detection elements, and the offset value after the set operation and the offset value after the reset operation were measured for each sample. The magnetic detection element has a plurality of magnetoresistive effect films MR1, and the magnetoresistive effect films MR1 have long axis directions inclined in the same direction with respect to signal magnetic fields Hs1 and Hs 2. The results are shown in fig. 9B. In fig. 9B, the horizontal axis represents the sample number, and the vertical axis represents the offset value. The offset value after the set operation is indicated by a legend ●, and the offset value after the reset operation is indicated by a legend Δ.

As is clear from a comparison between fig. 9A and 9B, it is clear that the offset value deviation of the embodiment (fig. 9A) is smaller than that of the reference example (fig. 9B) regardless of whether the set operation or the reset operation is performed.

<2. modification >

The present invention has been described above by referring to the embodiments, but the present invention is not limited to the above embodiments and various modifications are possible. For example, in the above-described embodiment, the full bridge circuit is formed by using four magnetic sensing elements as the sensing portions, but in the present invention, the half bridge circuit may be formed by using two magnetic sensing elements, for example. Further, the shape and size of the plurality of magnetoresistance effect films may be the same or different. The dimensions of the respective components and the layout of the respective components are merely examples, and are not limited thereto.

In the above-described embodiment, the case where the plurality of magnetoresistive effect films in the magnetic sensing elements 1 to 4 are arranged along the Y-axis direction, which is the extending direction of the bus line 5 and the feedback wiring 6, is shown as an example, but the present invention is not limited thereto. For example, as in the first modification shown in fig. 10A or the second modification shown in fig. 10B, the plurality of magnetoresistance effect films may be arranged in the X-axis direction so as to be parallel to the signal magnetic fields Hs1 and Hs 2.

In the above-described embodiments, the case where the magnetoresistance effect films MR1(MR3) and MR2(MR4) are alternately arranged in the magnetic detection elements 1 to 4 is shown as an example, but the present invention is not limited thereto. For example, as in the third modification example shown in fig. 11, a plurality of magnetoresistance effect films inclined in the same direction may be arranged adjacent to each other.

In the above embodiment, the direction of the magnetizations JS11 and JS21 of the magnetization pinned layers S11 and S21 was set to the + X direction, and the directions JS31 and JS41 of the magnetizations JS31 and S41 were set to the-X direction, but the present invention is not limited to this. For example, as in the fourth modification shown in fig. 12A and 12B, the directions of the magnetizations JS11, JS21, JS31, and JS41 may be orthogonal to the long-axis directions J1 to J4 of the magnetoresistive effect films MR1 to MR4, respectively.

in the above-described embodiment, the case where the bus line 5 as the first conductor and the feedback wiring 6 as the second conductor extend in parallel with each other has been described, but the present invention is not limited to this. For example, the second conductor may also be slightly inclined with respect to the first conductor. In this case, it is sufficient that the feedback current flowing in the second conductor forms a feedback magnetic field including a component in the opposite direction to the signal magnetic field formed by the signal current flowing in the first conductor.

In the above-described embodiments, the magnetic detection device described above is used as a current sensor for detecting a change in a signal current flowing through a conductor, but the use of the magnetic detection device of the present invention is not limited to this. For example, it is also suitable for use as: a magnetic detection device serving as an angle detection sensor for detecting a rotation angle of the rotating body; an electronic compass that detects geomagnetism, and the like.

According to the magnetic detection device of one embodiment of the present invention, high detection accuracy can be exhibited.

Further, the present technology can also adopt the following configuration.

(1)

a magnetic detection device is provided with:

A first magnetic detection element having a first resistance value that increases by application of a first magnetic field in a first direction and decreases by application of a second magnetic field in a second direction opposite to the first direction; and

A second magnetic detection element having a second resistance value that decreases by application of the first magnetic field and increases by application of the second magnetic field,

The first magnetic detection element and the second magnetic detection element each include a first magnetoresistance effect film and a second magnetoresistance effect film, the first magnetoresistance effect film having a first long axis direction, the first long axis direction being inclined at a first inclination angle with respect to the first direction; the second magnetoresistance effect film is connected in series with the first magnetoresistance effect film and has a second long axis direction inclined at a second inclination angle with respect to the first direction,

The magnetic detection apparatus satisfies the following conditional expression (1) and conditional expression (2),

0°＜θ1＜90°……(1)

-90°＜θ2＜0°……(2)

Wherein the content of the first and second substances,

θ 1: a first inclination angle of the first long axis direction relative to the first direction;

θ 2: the second long axis direction has a second inclination angle relative to the first direction.

(2)

The magnetic detection device according to the above (1), wherein,

Satisfying the following conditional expression (3) and conditional expression (4),

50°＜θ1＜72°……(3)

-72°＜θ2＜-50°……(4)。

(3)

The magnetic detection device of (1) or (2), wherein,

The first magnetoresistance effect film has a first magnetization pinned layer having a magnetization pinned in a first pinned direction substantially orthogonal to the first long axis direction,

The second magnetoresistance effect film has a second magnetization pinned layer having a magnetization pinned in a second pinned direction substantially orthogonal to the second long axis direction.

(4)

the magnetic detection device of (1) or (2), wherein,

the first magnetoresistance effect film and the second magnetoresistance effect film of the first magnetic detection element have a first magnetization pinned layer having a first magnetization pinned in the first direction,

the first magnetoresistance effect film and the second magnetoresistance effect film of the second magnetic detection element have a second magnetization fixed layer having a second magnetization fixed in the second direction.

(5)

The magnetic detection device according to any one of the (1) to (4), wherein,

Further provided with a first conductor which is provided with a first conductor,

The first conductor may generate the first magnetic field using a first signal current flowing in a first current direction orthogonal to both the first direction and the second direction, and may generate the second magnetic field using a second signal current flowing in a second current direction opposite the first current direction.

(6)

The magnetic detection device according to any one of the (1) to (4), wherein,

Further provided with a second conductor which is provided with a second conductor,

the second conductor is electrically insulated from both the first magnetic detection element and the second magnetic detection element and faces both the first magnetic detection element and the second magnetic detection element,

A first feedback magnetic field that is opposite to the first magnetic field and includes a component that is applied to both the first magnetic detection element and the second magnetic detection element can be generated by supplying a first feedback current to a second conductor,

by supplying a second feedback current to a second conductor, a second feedback magnetic field can be generated, the second feedback magnetic field being opposite to the second magnetic field and including a component that is given to both the first magnetic detection element and the second magnetic detection element.

(7)

the magnetic detection device according to any one of the (1) to (6), wherein,

the first magnetic detection element and the second magnetic detection element each include a plurality of the first magnetoresistance effect films and a plurality of the second magnetoresistance effect films,

The first inclination angles in the first long axis direction of the plurality of first magnetoresistance effect films are substantially equal,

the second inclination angles in the second long axis direction of the plurality of second magnetoresistance effect films are substantially equal.

This disclosure contains subject matter relating to the disclosure in japanese priority patent application JP2018-110081 filed at 8.6.2018 at the japan patent office, the entire contents of which are incorporated herein by reference.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible in light of design requirements and other factors, but are intended to be included within the scope of the appended claims or their equivalents.