阅读说明：本技术 一种基于探针电流耦合的脊间隙波导到微带线宽带过渡结构 (A kind of ridge gap waveguide based on probe current coupling is to microstrip line broadband transition structure ) 是由 蒲友雷 彭松涛 吴泽威 蒋伟 王建勋 罗勇 于 2019-07-15 设计创作，主要内容包括：该发明公开了一种基于探针电流耦合的脊间隙波导到微带线宽带过渡结构,涉及微波/毫米波无源器件领域,具体为一种基于探针电流耦合的脊间隙波导到微带线宽带过渡结构。为了解决现有技术中脊间隙波导在与MMIC电路进行集成时面临的带宽受限、损耗过大、装配容差性能低等问题。本发明提出了一种基于探针电流耦合的脊间隙波导到微带线宽带过渡结构,其具有超宽带、低损耗、容差性能强、结构紧凑、易于加工与装配等优点。(A kind of ridge gap waveguide based on probe current coupling of the disclosure of the invention arrives microstrip line broadband transition structure, is related to microwave/millimeter wave passive device field, specially a kind of ridge gap waveguide coupled based on probe current to microstrip line broadband transition structure.In order to solve Bandwidth-Constrained that prior art median ridge gap waveguide faces when being integrated with MMIC circuit, the problems such as loss is excessive, fabrication tolerance performance is low.The invention proposes a kind of ridge gap waveguide based on probe current coupling to microstrip line broadband transition structure, have many advantages, such as that ultra wide band, low-loss, tolerance performance is strong, compact-sized, easy to process and assembles.)

1. a kind of ridge gap waveguide based on probe current coupling is to microstrip line broadband transition structure, the structure include: lower chamber, Upper cover plate, the upper cover plate are arranged above lower chamber；The lower chamber includes input cavity, adapter cavity, output cavity, the transition Chamber is raised structure between input cavity and output cavity；The input cavity and output cavity configuration are full symmetric, the input Chamber and output cavity midline position are both provided with ridge gap waveguide, and ridge gap waveguide end setting probe is simultaneously directed toward adapter cavity, The probe is located at ridge gap waveguide upper surface and width is equal with ridge gap waveguide, and is linked together with ridge gap waveguide, described Adapter cavity waist location two sides are both provided with " recessed " type notch；It should " recessed " type notch formation terminal short circuit cavity；The ridge gap The probe of waveguide protrudes into terminal short circuit cavity, and the adapter cavity waist is provided with MMIC installation cavity, the MMIC installation cavity pair The probe location of ridge gap waveguide is answered to be provided with windowing, the windowing is for making probe and Microstrip Interconnection, the MMIC installation cavity Substrate is set with the bottom of windowing, microstrip line conduction band, the end of the microstrip line and the probe of ridge gap waveguide are set on substrate Intermediate point connection, the external active microwave integrated circuit establish connection by microstrip line herein and ridge gap waveguide.

2. a kind of ridge gap waveguide based on probe current coupling as described in claim 1 is to microstrip line broadband transition structure, It is characterized in that the probe length of the ridge gap waveguide be quarter-wave, end carry out corner cut processing, probe end with Distance between the short-circuit face of terminal short circuit cavity is 0.1-0.01 λ.

3. a kind of ridge gap waveguide based on probe current coupling as described in claim 1 is to microstrip line broadband transition structure, It is characterized in that the two sides of ridge gap waveguide all array arrangements have cylindrical electro-magnetic bandgap knot in the input cavity and output cavity Structure.

4. a kind of ridge gap waveguide based on probe current coupling as described in claim 1 is to microstrip line broadband transition structure, It is characterized in that the width of the MMIC installation cavity is greater than the width of windowing, and additionally it is arranged one between MMIC installation cavity and windowing Width is greater than the secondary windowing that windowing width is less than MMIC installation cavity width.

5. a kind of ridge gap waveguide based on probe current coupling as described in claim 1 is to microstrip line broadband transition structure, It is characterized in that the microstrip line is 50 ohm microstrips, and the susceptance at ridge gap waveguide edge is B:

In formula

And because

Wherein λ_cIndicate that ridge gap waveguide cutoff frequency, ε indicate that the dielectric of filled media around ridge (medium is air herein) is normal Number, w1 are the width of metal ridge, and h1 is the height of ridge, and w is the electromagnetic belt of ridge gap waveguide and surrounding first row solid cylindrical The distance of gap structure, h are ridge gap waveguide total height, ε₀For permittivity of vacuum, μ₀For space permeability, η₀For wave impedance；Base In formula (1)-(4), the cutoff frequency of ridge gap waveguide when gap is zero is found out；And characteristic impedance Z_cIt can be determined by following formula:

F indicates ridge gap waveguide working frequency, f in formula_cIndicate cutoff frequency.

Technical field

The present invention relates to microwave/millimeter wave passive device field, specially a kind of ridge gap based on probe current coupling Waveguide is to microstrip line broadband transition structure.

Background technique

In recent years, the communication spectrum of low frequency is very crowded, to meet current high-speed radiocommunication, Wideband signal transmission Demand, it has to higher band spreading frequency spectrum resource.In millimeter wave frequency band, circuit loss is reduced, radiation loss is primary The factor of consideration.Traditional planar transmission line is such as: microstrip line, co-planar waveguide, strip line are in high band because dielectric loss sharply increases Adding causes its application value to be greatly reduced.Novel ridge gap waveguide is a kind of transmission line for being very suitable to work in millimere-wave band, It can be used to make the passive devices such as passive filter, high-gain aerial battle array, power synthesis network.Also, have benefited from gap wave The special separate structure led, these devices easily can be integrated and be encapsulated with MMIC circuit.In addition, ridge gap waveguide With quasi- TEM mould single mode transport, the air gap between the surface PMC and the surface metal PEC formed using EBG structure is less than four points One of wavelength to form band logical effect, this makes it with comparatively wide working band, can reach several octaves.Upper and lower cover plates All-metal structure without being directly in electrical contact also ensures that ridge gap waveguide has extremely low loss and lower process requirements.In Integrating multiple transceiver modules i.e. between ridge gap waveguide upper and lower plates may make up extensive mimo system, it means that will be expected to realize The compactedness and high efficiency of entire millimeter wave transceiving module.Therefore, integrating, which becomes ridge gap waveguide with each module of integration, is applied to The key of millimetre-wave attenuator.For this purpose, the transition structure research for carrying out ridge gap waveguide to planar circuit is very necessary.

Article " Design of a simple transition from microstrip to ridge gap waveguide suited for MMIC and antenna integration,”IEEE Antennas and Wireless Propagation Letters, vol.12, pp.1558-1561,2013. " author A.U.Zaman and T.Vukusic, M.Alexanderson proposes a kind of lamination type ridge gap waveguide to the transition structure of microstrip line, the structure be utilized micro-strip with The similitude of ridge gap waveguide transmission mode, obtains higher transfer efficiency.Structurally, it makes microstrip line be placed in backbone Surface, and be directly fixed using upper cover plate.However, this structure must be kept between the thickness of microstrip substrate and waveguide air The height of gap is consistent, this meeting is so that the ridge gap waveguide Bandwidth-Constrained designed.Further, since micro-strip will be laminated to metal ridge and lid Between plate, MMIC circuit is likely to result in by physical damage, and then influence device performance.Article " Design of F-band transition from microstrip to ridge gap waveguide including monte carlo assembly tolerance analysis,”IEEE Transactions on Microwave Theory and Techniques, vol.64, no.4, pp.1245-1254,2016. " author A.A.Braz ' alez and J.Flygare, J.Yang reports a kind of touchless micro-strip to ridge gap waveguide transition structure, Chong Die with metal ridge using microband paste To realize electromagnetic coupling, and impedance matching is realized using quarter-wave ridge.However, this structure is between microband paste and ridge Gap it is very sensitive, tolerance performance is lower.The assembly for making PCB is become very difficult by this, even more difficult especially in high band To reach the requirement of machining accuracy.

Summary of the invention

In order to solve, Bandwidth-Constrained, loss that ridge gap waveguide faces when being integrated with MMIC circuit be excessive, assembly The problems such as tolerance performance is low.The invention proposes a kind of ridge gap waveguides based on probe current coupling to microstrip line broadband transition Structure has many advantages, such as that ultra wide band, low-loss, tolerance performance is strong, compact-sized, easy to process and assembles.

In order to realize above-mentioned purpose of design, the invention adopts the following technical scheme:

It is a kind of based on probe current coupling ridge gap waveguide to microstrip line broadband transition structure, which includes: cavity of resorption Body, upper cover plate, the upper cover plate are arranged above lower chamber；The lower chamber includes input cavity, adapter cavity, output cavity, described Adapter cavity is raised structure between input cavity and output cavity；The input cavity and output cavity configuration are full symmetric, described Input cavity and output cavity midline position are both provided with ridge gap waveguide, and ridge gap waveguide end setting probe is simultaneously directed toward transition Chamber, which is located at ridge gap waveguide upper surface and width is equal with ridge gap waveguide, and is linked together with ridge gap waveguide, institute It states adapter cavity waist location two sides and is both provided with " recessed " type notch；It should " recessed " type notch formation terminal short circuit cavity；Between the ridge The probe of gap waveguide protrudes into terminal short circuit cavity, and MMIC (monolithic integrated microwave circuit) is provided among the adapter cavity waist Installation cavity, the probe location that the MMIC installation cavity corresponds to ridge gap waveguide are provided with windowing, the windowing for make probe with it is micro- Band line interconnects, and substrate is arranged in the bottom of the MMIC installation cavity and windowing, is arranged microstrip line conduction band on substrate, the microstrip line with The end intermediate point of the probe of ridge gap waveguide connects, and the external active microwave integrated circuit passes through herein between microstrip line and ridge Connection is established in gap waveguide.

Further, the probe length of the ridge gap waveguide is about quarter-wave, and end carries out corner cut processing, is visited Needle end between the short-circuit face of terminal short circuit cavity at a distance from be about 0.1-0.01 λ.

Further, in the input cavity and output cavity, the two sides of ridge gap waveguide all array arrangements have cylindrical electricity Ultra wide.

Further, the width of the MMIC installation cavity is greater than the width of windowing, and volume between MMIC installation cavity and windowing One width of outer setting is greater than the secondary windowing that windowing width is less than MMIC installation cavity width.

Further, the microstrip line is 50 ohm microstrips, and the susceptance at ridge gap waveguide edge is B:

In formula

And because

Wherein λ_cIndicate that ridge gap waveguide cutoff frequency, ε indicate Jie of filled media around ridge (medium is air herein) Electric constant, w1 are the width of metal ridge, and h1 is the height of ridge, and w is the electricity of ridge gap waveguide and surrounding first row solid cylindrical The distance of ultra wide, h are ridge gap waveguide total height, ε₀For permittivity of vacuum, μ₀For space permeability, η₀For wave resistance It is anti-；Based on formula (1)-(4), the cutoff frequency of ridge gap waveguide when gap is zero can be found out；And characteristic impedance Z_cIt can be by following formula It determines:

F indicates ridge gap waveguide working frequency, f in formula_cIndicate cutoff frequency.

The present invention has the advantages that

(1) characteristic impedance of transition structure microstrip line uses 50 ohm of standard, can directly interconnect with MMIC.

(2) ridge probe is contacted with micro-strip conduction band, and the coupling of energy is carried out with electric current, has tolerance more higher than electromagnetic coupling Performance greatly reduces the requirement of PCB encapsulation and machining accuracy.

(3) reserved space above microstrip line, convenient for accommodating MMIC circuit.Reserved cavity is also integrated in ridge gap waveguide Between upper and lower plates, compactedness and integration with higher, and circuit performance will not be destroyed because of the physical pressure between upper and lower plates.

(4) transition structure, microstrip substrate can choose any substrate, without guaranteeing that substrate thickness and gap waveguide are empty Gas clearance height is consistent, can utilize ridge gap waveguide broadband character to greatest extent.

(5) the transition structure relative bandwidth can at least cover three adjacent bands.This can reduce actual wireless communication Single module multifrequency application can be realized in module design time and cost.

(6) transition structure is completely integrated between two pieces of metal plates with certain interval, ensure that extremely low insert Enter loss.Also, due to the stopband effect of ridge gap waveguide periodic structure, have no additional radiation leaks.

Detailed description of the invention

Fig. 1 is embodiment schematic three dimensional views of the ridge gap waveguide of the present invention to microstrip line transition structure；

Fig. 2 is embodiment unilateral side partial exploded view；

Fig. 3 is the transition structure tolerance analysis schematic diagram；

Fig. 4 is the transition structure reflection coefficient and transmission coefficient simulation result；

Fig. 5 is the transition structure tolerance analysis parameter scanning reflection coefficient simulation result；

Specific embodiment

Below by taking a job is in the ridge gap waveguide to microstrip line transition structure of tri- wave bands of C, X, Ku as an example, to this hair The technical solution of bright proposition is described in further detail.The transition structure is integrally as shown in Figure 1, 2.It include: ridge gap wave Lead input 1, quarter-wave end corner cut ridge probe 2, electro-magnetic bandgap (EBG) structure 3, terminal short circuit cavity 4, probe with it is micro- Band interconnection windowing 5,50 ohm microstrips (5880 substrate of Rogers) 6, MMIC installation cavity 7, lower chamber 8 and upper cover plate 9.

To microstrip transition structure, microwave signal is inputted in the form of quasi- TEM mould by ridge gap waveguide the ridge gap waveguide, Through ridge probe by the cavity of transmission of electromagnetic energy to terminal short circuit, realized at cavity ridge gap waveguide and 50 ohm microstrips it Between impedance transformation, and backfin probe and micro-strip surface carry out current coupling, and ridge gap waveguide energy is transitioned into microstrip line.

The microstrip line characteristic impedance is 50 ohm, can directly be interconnected with MMIC circuit with gold wire bonding.

An inductance is equivalent between the ridge probe cavity road section surface and ridge gap waveguide, distance is about λ/4.Ridge probe Capacity effect is formed between end and short-circuit face, distance is about 0.1-0.01 λ, increases this distance and carries out corner cut to probe and can Reduce this equivalent capacity.The resonance of equivalent capacity and inductance can be realized by adjusting probe length and corner cut width.Probe institute The design for locating cavity is to realize the impedance matching between gap waveguide and micro-strip.Microstrip line metal conduction band and ridge probe following table Face directly contacts, to realize that current energy couples.Micro-strip and ridge probe junction need to carry out windowing design, and when design, which should integrate, examines The size for considering window is easy the higher mode for having motivated transmission line discontinuously to locate, the too small difficulty that will increase assembly if excessive.

When the embodiment works, electromagnetic wave is inputted by quasi- TEM mould from ridge gap waveguide 1, through quarter-wave ridge probe 2 Into terminal short circuit cavity, become by adjusting probe corner cut and probe to the distance between cavity short circuit face progress resonance and impedance It changes.In turn, ridge probe is in electrical contact with 50 ohm microstrips for protruding into cavity, broadband signal transition is carried out with current coupling, by chamber Intracorporal mode of resonance is converted into the quasi- TEM mould of micro-strip.Finally, the amplification of signal is realized through MMIC circuit, then along opposite road Diameter is through transition structure with the output of ridge gap waveguide.

Bandwidth demand according to the embodiment, it is desirable that transition structure can be in the energy low-loss work of 6-18GHz full frequency band.Meet The size of the single channel ridge gap waveguide of bandwidth need to determine first.To periodic structure unit and the transverse structure comprising backbone respectively into Row dispersion emulation is final to determine that ridge width is 5mm, a height of 5.75mm of ridge to determine its bandpass range, around the first charge off around ridge The spacing for following closely surface is 16mm, and the height of ridge gap waveguide is 6.75mm, and the diameter of cylindrical pins is 4.5mm, period 8mm, The air gap of period cylindrical pins and upper cover plate is 0.3mm.

The ridge gap waveguide, characteristic impedance should guarantee to carry out broadband with standard microstrip close to 50 ohm Match.The more difficult calculating of ridge gap waveguide characteristic impedance exact value, it is contemplated that when gap be zero extreme case under, ridge gap waveguide phase It closes characteristic and is similar to ridge waveguide, obtained at this time by formula (1)-(4):

Ideally ridge gap waveguide cutoff frequency f when the air gap is zero can be calculated by above formula_cAbout 4.65GHz, and then can be obtained based on formula (5):

It is computed, ridge gap waveguide characteristic impedance is within the scope of working band close to 50 Ω, when frequency is 7.8GHz, Zc About 50 Ω.

It is Rogers 5880 that the present embodiment, which chooses microstrip line substrate material, and thickness selects 0.254mm, relative dielectric constant ε_r=9.9, loss tangent angle δ=0.0001 tan.Show that 50 ohm microstrip line widths are according to micro-strip characteristic impedance formula 0.77mm.The initial length of ridge probe is selected as quarter-wave (centre frequency 12GHz).Probe end and cavity short circuit The distance between face is set as 0.02 wavelength, in order to the matching between probe and microstrip line.Microstrip line conduction band is close under ridge probe Surface, being in contact with it distance is 0.5mm.For the best match for reaching transition structure, the window size of conduction band and probe junction Parameter scanning is carried out to it by Frequency Simulation Software HFSS, finally windowing length is chosen and width is 2mm.Additionally, it is contemplated that Certain space can be occupied to MMIC circuit, is thus expanded micro-strip substrate and cavity, to reach the need of practical application It asks.Ridge gap waveguide design complete on the basis of, optimize the corner cut size of ridge probe, place cavity height probe to Duan Lu The distance in face realizes the resonance of equivalent capacity and inductance, to realize ridge gap waveguide to the low damage between microstrip line in broadband Consume broadband transition.Through emulating, the size of transition structure is as follows: probe thickness 0.5mm, length 7.41mm, width 5mm, corner cut Trapezoidal length is 1.73mm, and it is highly 9.03mm that short-circuit housing width, which is 16mm, length 7.91mm, and MMIC circuit installs cavity First order step length 1.5mm, width 5mm, second level step length is 2.5mm, width 16mm.

Fig. 4 is the reflection coefficient and transmission coefficient that the ridge gap waveguide emulates back-to-back to microstrip line transition structure.In Within the scope of 6GHz-18GHz, the return loss of input port is less than -20dB, is even more especially to be lower than -30dB in 7.5GHz-15GHz, Show characteristic and good stationary wave characteristic of the transition structure with ultra wide band.Back to back structure insertion loss is lower than 0.1dB, The loss of i.e. unilateral transition structure is lower than 0.05dB, shows that there is the transition structure good impedance matching performance and mode to convert Performance.

Fig. 5 is that the ridge gap waveguide is carried out to the rigging error that microstrip line transition structure may cause PCB assembly Tolerance characteristics analysis.Within the scope of 6GHz-18GHz, transition structure can guarantee within micro-strip offset ridge probe core 0.3mm Normal work, the surface structure have high tolerance performance.

In conclusion the example can realize low-loss ridge gap waveguide mode in C, X, Ku frequency range while steady operation Transition between 50 ohm microstrip modes.The structure is expected to be applied to ultra wide band power combing amplification module, receiving module, day In the wireless communication modules such as linear array and system, and integrated level with higher and compactedness.

The foregoing is merely present pre-ferred embodiments, it is not sufficient to as limitation of the invention, it is other any Modification, replacement made by without departing from the spirit and principles of the present invention, improvement etc., should be included in the scope of the present invention Within.