阅读说明：本技术 一种石墨烯分布式放大器 (A kind of graphene distributed amplifier ) 是由 王向华 于 2019-08-22 设计创作，主要内容包括：本发明公开了一种石墨烯分布式放大器,包括：同一衬底上设置的输入电路、若干级联的放大单元电路、输出电路、栅极偏置电路和漏极偏置电路,所述输入电路、漏极偏置电路分别连接第一级放大单元电路的栅极和漏级,最后一级放大单元电路的漏级和栅极分别连接输出电路和栅极偏置电路,信号通过所述输入电路进入放大单元电路,所述栅极偏置电路对输入信号进行调节,所述放大单元电路采用共源共栅结构对信号进行放大,所述输出电路输出级联放大后的信号,所述漏极偏置电路对输出信号进行调节。(The invention discloses a kind of graphene distributed amplifiers, it include: the input circuit being arranged on same substrate, several cascade amplifying unit circuits, output circuit, gate bias circuit and drain electrode biasing circuit, the input circuit, drain electrode biasing circuit is separately connected the grid and drain of first order amplifying unit circuit, the drain and grid of afterbody amplifying unit circuit are separately connected output circuit and gate bias circuit, signal enters amplifying unit circuit by the input circuit, input signal is adjusted in the gate bias circuit, the amplifying unit circuit amplifies signal using cascode structure, the amplified signal of output circuit output cascade, output signal is adjusted in the drain electrode biasing circuit.)

1. a kind of graphene distributed amplifier characterized by comprising input circuit, the Ruo Ganji being arranged on same substrate Amplifying unit circuit, output circuit, gate bias circuit and the drain electrode biasing circuit of connection, the input circuit, drain electrode biased electrical Road is separately connected the grid and drain of first order amplifying unit circuit, drain and the grid difference of afterbody amplifying unit circuit Connection output circuit and gate bias circuit, signal enter amplifying unit circuit, the gate bias by the input circuit Input signal is adjusted in circuit, and the amplifying unit circuit amplifies signal using cascode structure, described defeated Circuit output cascades amplified signal out, and output signal is adjusted in the drain electrode biasing circuit.

2. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that the input circuit includes input Gate slice external inductance is separately connected input port and first order amplifying unit circuit using microstrip structure or coplanar waveguide structure.

3. a kind of graphene distributed amplifier as claimed in claim 2, which is characterized in that the input gate slice external inductance Length and width it is adjustable.

4. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that graphene distributed amplifier Overall gain is equal to the sum of the gain of amplifying unit circuits at different levels, and the overall gain of graphene distributed amplifier is single by changing amplification First circuits present is adjusted.

5. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that the amplifying unit circuit includes First graphene field effect transistor and the second graphene field effect transistor, the leakage of first graphene field effect transistor Two inductance, the grid setting build-out resistor and capacitor of first graphene field effect transistor, institute are set on the transmission line of pole The source electrode for stating the first graphene field effect transistor connects the drain of second graphene field effect transistor, second stone Two gate slice external inductances are set in the gate transmission line of black alkene field effect transistor.

6. a kind of graphene distributed amplifier as claimed in claim 5, which is characterized in that first graphene field effect The capacitance of drain shunt capacitance of transistor, and a resistance is set and is connected with the capacitor.

7. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that the output circuit includes output Inductance is separately connected afterbody amplifying unit circuit and output port using microstrip structure or coplanar waveguide structure.

8. a kind of graphene distributed amplifier as claimed in claim 7, which is characterized in that the length of the outputting inductance and Width is adjustable.

9. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that the gate bias circuit is stone The grid of black alkene distributed amplifier is powered on port, including concatenated two resistance, connects a gate slice between two resistance External inductance, the gate slice external inductance and the grid on afterbody amplifying unit circuitry gate transmission line of the gate bias circuit The series connection of piece external inductance.

10. a kind of graphene distributed amplifier as described in claim 1, which is characterized in that the drain electrode biasing circuit is The drain electrode of graphene distributed amplifier is powered on port, including five divider resistances, a filter capacitor and an inductance, described The inductance of drain electrode biasing circuit is connected with the inductance in first order amplifying unit circuit drain transmission line, and power-up port passes through five Divider resistance applies voltages to graphene distributed amplifier.

Technical field

The invention belongs to the technical field of distributed amplifier optimization design more particularly to a kind of graphene distributed air-defenses Device.

Background technique

Graphene be by single layer of carbon atom it is tightly packed at bi-dimensional cellular shape lattice structure material, this special crystal Structure makes graphene have the characteristics such as ultra-thin, superior electron mobility, superelevation saturation drift velocity and superelevation thermal conductivity.Graphene It is a kind of good semiconductor material of electric property, carrier typical case's saturation drift velocity is 5 × 107cm/s, and carrier moves Shifting rate is greater than 2 × 105cm2/Vs, is the highest material of mobility in the semiconductor material being currently known, in microelectronic radio frequency Field is with a wide range of applications.

Distributed amplifier has flat gain, preferable gain bandwidth product and good input and output matching, is mesh Preceding commonly used ultra wide band circuit design method.Every level-one amplifying unit of distributed amplifier all generates certain gain, And it is distributed in entire bandwidth of operation, and the overall gain of amplifier is then equal to the sum of the gain of amplifying units at different levels, this and grade The situation for joining the product that amplifier overall gain is equal to gain per stage is different.

Existing graphene distributed amplifier generally uses distributed LC network that gate transmission line and drain electrode transmission is made Line makes the parasitic capacitance of grapheme transistor grid and drain electrode and resistance constitute artificial transmission with grid line and drain line respectively Line, the i.e. parasitic parameter of transistor have become a part of transmission line, and the gain bandwidth product of no longer limit transistor, so The distributed amplifier has biggish bandwidth of operation.Though the design method of existing graphene distributed amplifier can improve increasing Beneficial bandwidth product, but still the space that is significantly improved, gain bandwidth product needs further increase.

Summary of the invention

To overcome above-mentioned the deficiencies in the prior art, the present invention provides a kind of graphene distributed amplifier, pass through improvement Circuit structure further improves the gain bandwidth product of graphene distributed amplifier using cascode structure.

According to the one aspect of one or more other embodiments of the present disclosure, a kind of graphene distributed amplifier is provided.

A kind of graphene distributed amplifier, comprising: input circuit, several cascade amplification lists being arranged on same substrate First circuit, output circuit, gate bias circuit and drain electrode biasing circuit, the input circuit, drain electrode biasing circuit are separately connected The grid and drain of first order amplifying unit circuit, the drain and grid of afterbody amplifying unit circuit are separately connected output electricity Road and gate bias circuit, signal enter amplifying unit circuit by the input circuit, and the gate bias circuit is to input Signal is adjusted, and the amplifying unit circuit amplifies signal using cascode structure, the output circuit output Output signal is adjusted in signal after Cascaded amplification, the drain electrode biasing circuit.

Further, the input circuit includes input gate slice external inductance, using microstrip structure or coplanar waveguide structure, It is separately connected input port and first order amplifying unit circuit.

Further, the length and width of the input gate slice external inductance is adjustable.

Further, the overall gain of graphene distributed amplifier is equal to the sum of the gain of amplifying unit circuits at different levels, stone The overall gain of black alkene distributed amplifier is adjusted by changing amplifying unit circuits present.

Further, the amplifying unit circuit includes the first graphene field effect transistor and the second graphene field effect Two inductance, first graphene field are arranged in the drain transmission line of first graphene field effect transistor for transistor The grid setting build-out resistor and capacitor of effect transistor, the source electrode connection of first graphene field effect transistor described the Two grid are arranged in the gate transmission line of second graphene field effect transistor for the drain of two graphene field effect transistors Pole piece external inductance.

Further, the capacitance of drain shunt capacitance of first graphene field effect transistor, and be arranged a resistance with Capacitor series connection.

Further, the output circuit includes outputting inductance, using microstrip structure or coplanar waveguide structure, is separately connected Afterbody amplifying unit circuit and output port.

Further, the length and width of the outputting inductance is adjustable.

Further, the gate bias circuit is that the grid of graphene distributed amplifier is powered on port, including series connection Two resistance, connect a gate slice external inductance between two resistance, the gate slice external inductance of the gate bias circuit with Gate slice external inductance series connection on afterbody amplifying unit circuitry gate transmission line.

Further, the drain electrode biasing circuit is that the drain electrode of graphene distributed amplifier is powered on port, including five Divider resistance, a filter capacitor and an inductance, the inductance and first order amplifying unit circuit of the drain electrode biasing circuit leak Inductance series connection on the transmission line of pole, is powered on port by five divider resistances and applies voltages to graphene distributed amplifier.

The above one or more technical solution there are following the utility model has the advantages that

A kind of graphene distributed amplifier disclosed by the invention proposes a kind of for graphene field effect transistor New circuit structure improves the gain bandwidth product of graphene distributed amplifier.By improving existing circuit structure, use Cascode structure further improves the gain bandwidth product of graphene distributed amplifier.

Detailed description of the invention

The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.

Fig. 1 is a kind of graphene distributed amplifier schematic diagram of the one or more embodiments of the present invention；

Wherein, 1- input circuit, 2- amplifying unit circuit, 3- output circuit, 4- gate bias circuit and 5- drain electrode biasing Circuit.

Specific embodiment

It is noted that described further below be all exemplary, it is intended to provide further instruction to the present invention.Unless another It indicates, all technical and scientific terms used herein has usual with general technical staff of the technical field of the invention The identical meanings of understanding.

It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root According to exemplary embodiments of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.

In the absence of conflict, the feature in the embodiment and embodiment in the present invention can be combined with each other.