阅读说明：本技术 版图修正方法 (Domain modification method ) 是由 刘洋 刘建忠 顾晓敏 于 2019-08-29 设计创作，主要内容包括：本发明提供了一种版图修正方法,包括：获取原始版图,原始版图中包括至少两个目标图案,目标图案中包括有第一图形和第二图形,第一图形为条形结构,第一图形和第二图形连接,目标图案的第一图形的一侧或两侧设置有另一目标图案的第二图形,并且,目标图案的第二图形与另一目标图案的第二图形间隔设置；在目标图案第一图形靠近第二图形的侧边上添加至少一个修正图形,或者,在另一目标图案中与目标图案第一图形所紧邻的边缘处,挖除至少一个图形。采用本发明提供的版图修正方法修正完成后,所制作出的掩膜版可以增加曝光的工艺窗口,有效地避免了断线或粘连等工艺缺陷,从而确保了最终形成在基底上的实际图案不会失真。(The present invention provides a kind of domain modification methods, it include: acquisition original layout, it include at least two target patterns in original layout, it include the first figure and second graph in target pattern, first figure is strip structure, and the first figure is connected with second graph, and the one or both sides of the first figure of target pattern are provided with the second graph of another target pattern, also, the second graph interval of the second graph of target pattern and another target pattern is arranged；At least one correction pattern is added on side of the first figure of target pattern close to second graph, alternatively, excavating at least one figure with the adjacent edge of the first figure of target pattern institute in another target pattern.After the completion of domain modification method provided by the invention amendment, produced mask plate can increase the process window of exposure, efficiently avoid the defective workmanships such as broken string or adhesion, ensure that the actual pattern being eventually formed in substrate will not be distorted.)

1. a kind of domain modification method, which is characterized in that the described method includes:

Original layout is obtained, includes at least two target patterns in the original layout, includes first in the target pattern Figure and second graph, the first figure are strip structure, and first figure is connected with the second graph, the target pattern The one or both sides of the first figure be provided with the second graph of another target pattern, also, the second figure of the target pattern The second graph interval of shape and another target pattern is arranged；

At least one correction pattern is added on side of first figure of target pattern close to second graph, described in increasing In target pattern the first figure close to the second graph part width dimensions, alternatively, in another target pattern with The adjacent edge of first figure of target pattern institute, excavates at least one figure, with increase another target pattern with Spacing between the target pattern.

2. domain modification method as described in claim 1, which is characterized in that the company of first figure and the second graph The edge that place is located at the second graph is connect, alternatively, being located at the non-edge position of the second graph.

3. domain modification method as described in claim 1, which is characterized in that by first figure far from the second graph The extending direction of the side length of side is defined as first direction, and, the width dimensions of the second graph in a first direction with The ratio between the width dimensions of first figure in a first direction are less than or equal to 10, are more than or equal to 5.

4. domain modification method as described in claim 1, which is characterized in that by first figure far from the second graph The extending direction of the side length of side is defined as first direction, and the extending direction of first figure side is defined as second party To；

And the method that at least one correction pattern is added on side of first figure of target pattern close to second graph Include:

Using the junction of the first figure of the target pattern and second graph as starting point, along the second direction, described Correction pattern one, correction pattern two ... correction pattern n are successively added on the side of first figure of target pattern, until described The distance between second graph of correction pattern n and another target pattern is less than first threshold, and first threshold is between 30nm- Between 70nm；

Wherein, the correction pattern one, the width dimensions of correction pattern two ... correction pattern n in a first direction are gradually passed Subtract, the width dimensions of the correction pattern one in a second direction are more than or equal to the second graph of the target pattern and described another The half of the second graph spacing of one target pattern.

5. domain modification method as described in claim 1, which is characterized in that by first figure far from the second graph The extending direction of the side length of side is defined as first direction, and the extending direction of first figure side is defined as second party To；

Also, the second graph of another target pattern has the adjacent salient angle of the first figure with the target pattern, institute The wedge angle of salient angle is stated in face of the first figure of the target pattern and the junction of second graph；

And at least one is excavated with the adjacent edge of the first figure of target pattern institute in another target pattern The method of a figure include: using the salient angle as starting point, along the second direction, in another target pattern with the mesh The adjacent edge of the first figure of case of marking on a map institute, successively excavates figure one, figure two ... figure n, described another to increase Spacing between target pattern and the first figure of the target pattern；

Wherein, the figure one, the width dimensions of figure two ... figure n in a first direction are sequentially reduced.

6. domain modification method as claimed in claim 5, which is characterized in that the figure one, figure two ... figure n exist The sum of width dimensions in second direction are more than or equal to the width dimensions of the second graph in a second direction.

7. domain modification method as described in claim 4 or 5, which is characterized in that the correction pattern one and the figure one Width dimensions in a first direction are less than or equal to 1/5th of the width dimensions of the second graph in a first direction.

8. domain modification method as described in claim 4 or 5, which is characterized in that at least one described correction pattern and described At least one figure is rectangle.

9. domain modification method as claimed in claim 3, which is characterized in that first figure is in said first direction Width dimensions are between 1-2 times of minimum feature in the original layout.

10. domain modification method as claimed in claim 4, which is characterized in that at least one described correction pattern not with it is another Target pattern overlapping.

Technical field

The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of domain modification method.

Background technique

In the manufacturing process of semiconductor devices, it will usually processing is exposed to semiconductor base based on mask plate, from And the pattern on mask plate is transferred on semiconductor base, to execute development, etching etc. subsequently through to semiconductor base Step.

But in the related technology, multiple target patterns have been generally comprised on mask plate, each target pattern specifically includes two A figure, such as include the first figure A1 and second graph A2, the first figure A1 with reference to the target pattern A in Fig. 1 For strip, and, the first figure A1 is connect with second graph A2, also, both second graph A2 and the first figure A1 Different widths it is larger.At the same time, the side of the first figure A1 of the target pattern A has been disposed adjacent another target figure Case B, also, the spacing between adjacent target pattern is smaller, example as shown in figure 1 the first figure A1 of target pattern A with it is adjacent another The second graph B2 of one target pattern B is at a distance of relatively close.

Then on this basis, when being exposed based on the pattern on the mask plate to semiconductor base, due to each mesh The width of first figure of case of marking on a map is smaller, and larger with the different widths of second graph, then light is in second graph and first Luminous energy point caused by optical proximity effect (Optical Proximity Effect, OPE) easily occurs for the junction of figure With uneven problem, to cause the connection of the first figure and second graph in the actual pattern being finally formed on the substrate There is broken string phenomenon in place；Simultaneously as the second graph B2 phase of the first figure A1 and another target pattern B of target pattern A Away from relatively closely, then it will lead to the first figure A1 and second graph B2 in the actual pattern ultimately formed on a semiconductor substrate and be adhered Together, so that ultimately forming actual graphical serious distortion on a semiconductor substrate.

Therefore, a kind of suitable domain modification method is needed to be modified to original layout, the light of compensating distortion figure By force, so as to based on it is possible to prevente effectively from broken string or the technological problems such as adhesion, while improving target figure after the exposure of revised domain The process window of case.

Summary of the invention

The purpose of the present invention is to provide a kind of domain modification method, with produce can be with the exposure mask of compensating distortion figure Version.

To achieve the above object, the present invention provides a kind of domain modification methods, which comprises

Original layout is obtained, includes at least two target patterns in the original layout, includes in the target pattern First figure and second graph, the first figure are strip structure, and first figure is connected with the second graph, the mesh The one or both sides of first figure of case of marking on a map are provided with the second graph of another target pattern, also, the target pattern The second graph interval of second graph and another target pattern is arranged；

At least one correction pattern is added on side of first figure of target pattern close to second graph, to increase Add the width dimensions of the first figure in the target pattern close to the second graph part, alternatively, in another target figure With the adjacent edge of the first figure of target pattern institute in case, at least one figure is excavated, to increase another target Spacing between pattern and the target pattern.

Optionally, the junction of first figure and the second graph is located at the edge of the second graph, Alternatively, being located at the non-edge position of the second graph.

Optionally, the extending direction of the side length by first figure far from the second graph side is defined as first Direction, and, the width dimensions of the second graph in a first direction and the width of first figure in a first direction The ratio between size is less than or equal to 10, is more than or equal to 5.

Optionally, the extending direction of the side length by first figure far from the second graph side is defined as first The extending direction of first figure side is defined as second direction by direction；

And at least one correction pattern is added on side of first figure of target pattern close to second graph Method include:

Using the junction of the first figure of the target pattern and second graph as starting point, along the second direction, In Correction pattern one, correction pattern two ... correction pattern n are successively added on the side of first figure of the target pattern, until The distance between second graph of the correction pattern n and another target pattern is less than first threshold, first threshold between Between 30nm-70nm.

Wherein, the correction pattern one, the width dimensions of correction pattern two ... correction pattern n in a first direction Gradually successively decrease, the width dimensions of the correction pattern one in a second direction are more than or equal to the second graph of the target pattern With the half of the second graph spacing of another target pattern.

Optionally, the extending direction of the side length by first figure far from the second graph side is defined as first The extending direction of first figure side is defined as second direction by direction；

Also, the second graph of another target pattern has adjacent convex with the first figure of the target pattern Angle, the wedge angle of the salient angle is in face of the first figure of the target pattern and the junction of second graph；

And in another target pattern with the adjacent edge of first figure of target pattern institute, excavate to The method of a few figure include: using the salient angle as starting point, along the second direction, in another target pattern with The adjacent edge of the first figure of target pattern institute, excavates figure one, figure two ... figure n, successively to increase State the spacing between another target pattern and the first figure of the target pattern；

Wherein, the figure one, the width dimensions of figure two ... figure n in a first direction are sequentially reduced.

Optionally, the sum of the figure one, the width dimensions of figure two ... figure n in a second direction be greater than etc. In the width dimensions of the second graph in a second direction.

Optionally, the width dimensions of the correction pattern one and the figure one in a first direction are less than or equal to described / 5th of the width dimensions of second graph in a first direction.

Optionally, at least one described correction pattern and at least one described figure are rectangle.

Optionally, the width dimensions of first figure in said first direction are minimum in the original layout Between 1-2 times of line width.

Optionally, at least one described correction pattern is not Chong Die with another target pattern.

In conclusion domain modification method provided by the invention, can first provide includes the original of at least two target patterns Domain, also, include the first figure of second graph and strip structure in target pattern, and the first figure and second graph Connection.Also, it can be added at least on the side of the second graph in the first figure of the target pattern in the present invention One correction pattern can so contract for increasing the first figure in target pattern close to the width dimensions of second graph part Gap between both short first figure and the second graph width dimensions, then when executing exposure based on the target pattern When light technology, the diffraction or light in the junction of first figure and the second graph since light occurs can effectively avoid Interference phenomenon and caused by photic-energy transfer unevenness problem, prevent first in the actual pattern being eventually formed in substrate The phenomenon that junction of figure and second graph is broken, ensure that the actual pattern being eventually formed in substrate not It can be distorted.

Further, the one or both sides of the first figure of the target pattern in original layout can be provided with another target Pattern, also, the second graph of the target pattern and another target pattern interval are arranged, another target pattern Second graph also there is the adjacent salient angle of the first figure with the target pattern.It, can also be with described in the present invention based on this The salient angle of another target pattern is starting point, in another target pattern and the adjacent edge of the first figure, successively Excavate figure one, figure two ... figure n, to increase the spacing between another target pattern and first figure, In this way, can effectively avoid the first figure in another target pattern and the target pattern when executing exposure technology Be adhered together, it is ensured that the actual pattern being eventually formed in substrate will not be distorted.

Detailed description of the invention

Fig. 1 is a kind of structural schematic diagram of original layout provided by the invention；

Fig. 2 is a kind of flow diagram for domain modification method that one embodiment of the invention provides；

Fig. 3 is the domain structure signal being added to after correction pattern in Fig. 1 domain that one embodiment of the invention provides Figure；

Fig. 4 is the structural schematic diagram for another original layout that one embodiment of the invention provides；

Fig. 5 is the domain structure signal being added to after correction pattern in Fig. 4 domain that one embodiment of the invention provides Figure；

Fig. 6 is a kind of domain structure schematic diagram that one embodiment of the invention provides；

Fig. 7 is another domain structure schematic diagram that one embodiment of the invention provides；

Fig. 8 is the schematic diagram of domain structure after having excavated figure in the second graph of another target pattern of Fig. 6；

Fig. 9 is the schematic diagram of domain structure after having excavated figure in the second graph of another target pattern of Fig. 7；

Figure 10 is the schematic diagram of domain structure after having excavated figure in the second graph of another target pattern of Fig. 3.

Specific embodiment

Domain modification method proposed by the present invention is described in further detail below in conjunction with the drawings and specific embodiments. According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing be all made of it is non- Often simplified form and use non-accurate ratio, only to it is convenient, lucidly aid in illustrating the mesh of the embodiment of the present invention 's.

Fig. 2 is a kind of flow diagram for domain modification method that one embodiment of the invention provides, as shown in Fig. 2, described Method may include:

Step 100 obtains original layout.

It may include having at least two target patterns in the original layout, include the first figure in the target pattern Shape and second graph, the first figure can be strip structure, and first figure is connected with the second graph, the target The second graph of another target pattern, also, the target pattern can be set in the one or both sides of first figure of pattern Second graph and another target pattern second graph interval be arranged.

Specifically, the original layout for example can be as shown in Figure 1, include two target patterns, respectively target pattern A and another target pattern B.Wherein, the side of the first figure of target pattern A A1 is provided with another target pattern B's Second graph B2, and the second graph A2 of the target pattern A and the interval the second graph B2 are arranged, also, second graph The distance between B2 and the second graph A2 can be between 150~200nm.

Further, the shape of first figure for example can be strip rectangle, and, first figure it is short It side can connection Chong Die with the second graph.Also, the junction of first figure and the second graph can be located at The edge of the second graph is (such as with reference to the first figure B1 and second graph in target pattern B another in Fig. 1 B2), the non-edge position of the second graph can also be located at (such as with reference to the first figure A1 in Fig. 1 in target pattern A With second graph A2).

And can the extending direction of side length by first figure far from the second graph side be determined as The extending direction of first figure side is determined as second direction (such as Fig. 1 by one direction (the direction M of example as shown in figure 1) In direction N).Then in the present embodiment, the width dimensions of first figure in said first direction are specifically between described In original layout between 1-2 times of minimum feature, wherein the minimum feature of the original layout be typically in the range of 35~40nm it Between (such as can be 38nm), and, the width dimensions of the second graph in a first direction and first figure exist The ratio between width dimensions on first direction should be between 5~10, that is, the two width dimensions difference is larger.

In addition, it should be noted that, a target figure can also be only included in the present embodiment, in the original layout Case, such as target pattern A shown in FIG. 1 or another target pattern B can be only included.

Step 200 adds at least one correction map on side of first figure of target pattern close to second graph Shape, to increase the width dimensions of the first figure in the target pattern close to the second graph part, alternatively, described another With the adjacent edge of the first figure of target pattern institute in one target pattern, at least one figure is excavated, described in increasing Spacing between the first figure of another target pattern and the target pattern.

Wherein, the method that at least one correction pattern is added in the target pattern can be with are as follows: with the target pattern The first figure and second graph junction be starting point, in a second direction, in the side of the first figure of the target pattern On successively add correction pattern one, correction pattern two ... correction pattern n, until the correction pattern n and another target The distance between second graph of pattern is less than first threshold, and first threshold is between 30nm-70nm.

Wherein, the correction pattern one, the width dimensions of correction pattern two ... correction pattern n in a first direction Gradually successively decrease, and the width dimensions of the correction pattern one in a second direction should be greater than the equal to the target pattern The half of the second graph spacing of two figures and another target pattern.And the correction pattern one is in first party Upward width dimensions should be less than equal to the width dimensions of the second graph in a first direction 1/5th, it is described to repair Positive figure is not overlapped with another target pattern.

Further, it should be noted that based on first figure and the second graph junction described second The difference of position in figure, the specific method that at least one correction pattern is added in above-mentioned steps 200 also can be different.

Specifically, if the first figure of the target pattern and the junction of second graph are located at the second graph At non-edge, at least one described correction pattern should be added to first figure of target pattern two sides or one On side.

Exemplary, with reference to Fig. 1, the junction of the first figure A1 and second graph A2 of the target pattern A are located at described At the non-edge of second graph A2.Based on this, Fig. 3 provides a kind of the first of Fig. 1 target pattern for one embodiment of the invention Domain structure schematic diagram after two sides addition correction pattern of figure, as shown in figure 3, with the first of the target pattern A The junction of figure A1 and second graph A2 are starting point, in a second direction N, are divided on two sides of the first figure A1 It is not added to one C1 of correction pattern, two C2 of correction pattern, correction pattern C3.And with further reference to Fig. 3 it is found that the amendment The width dimensions of one C1 of figure, two C2 of correction pattern, correction pattern C3 in a first direction on M gradually successively decrease, and, it is described to repair Positive width dimensions of one C1 of figure on second direction N greater than the second graph A2 and the first figure B1 spacing I two/ One, and, one C1 of correction pattern, two C2 of correction pattern, correction pattern C3 be not Chong Die with another target pattern B.

Further, if the junction of the first figure in the target pattern and the second graph is located at described the The edge of two figures, then at least one described correction pattern should only be added to wherein the one of first figure of target pattern On side, a wherein side can be to be formed by angle not with the second graph in first figure 180 ° of side.

Exemplary, Fig. 4 is another original layout structural schematic diagram that one embodiment of the invention provides, as shown in figure 4, The junction of the first figure A1 and second graph A2 is located at the first edge figure A1 in target pattern A, and, described first Figure A1 includes side a and side b, and it is 180 ° that the side a and the second graph A2, which are formed by angle, the side It is 90 ° or 270 ° (180 ° i.e. non-) that the side b and second graph A2, which is formed by angle,.Based on this, Fig. 5 is the present invention one A kind of the first figure of target pattern shown in Fig. 4 side that embodiment provides is added to the domain structure after correction pattern and shows It is intended to, as shown in figure 5, using the junction of the first figure A1 of the target pattern A and second graph A2 as starting point, along second Direction N only adds one C1 of correction pattern, two C2 of correction pattern, correction pattern respectively on the side b of the first figure A1 C3。

As described above, the first figure A1 of target pattern A is added at least one close to the side of the second graph A2 After correction pattern, the process window of the first figure A1 is increased, while also increasing by the first figure A1 in a first direction Width dimensions reduce the width differential of both the first figure A1 and the second graph A2, then when based on the target When pattern A executes exposing operation, it is not easy that the interference due to light occurs in the junction of the first figure A1 and second graph A2 Or diffraction effect and the problem of photic-energy transfer unevenness that generates, the process window of exposing operation is improved, to ensure that most End form will not be distorted at pattern on a semiconductor substrate.Also, since correction pattern one, correction pattern two ... are corrected The width dimensions of figure n in a first direction gradually successively decrease, and, the width dimensions of correction pattern one in a second direction are big In the half of the second graph spacing for the second graph and another target pattern for being equal to the target pattern, then may be used It is larger with the width dimensions of the determination correction pattern one in the first direction and a second direction.Based on this, when in target figure After the junction of case the first figure A1 and second graph A2 are added to correction pattern one, enable to the first figure A1 with The junction photic-energy transfer of second graph A2 more evenly, can preferably improve in the first figure A1 and second graph A2 Junction occur OPC effect, further ensure that the pattern ultimately formed on a semiconductor substrate will not be distorted.

Further, it should be noted that the side of above-mentioned the first figure A1 in target pattern A, which is successively added, repairs It during the method for positive figure, is stopped when the distance between correction pattern n and another target pattern B are less than first threshold Add correction pattern.It that is to say, the method for above-mentioned addition correction pattern is provided with it primarily directed to the first figure side For the target pattern (the target pattern A of example as shown in figure 1) of his target pattern.

But in the original layout necessarily including a certain target pattern, the side of the first figure is not provided with it His target pattern, such as another target pattern B shown in FIG. 1, the side of the first figure B1 of another target pattern B is simultaneously It is not provided with other target patterns.However, the width dimensions of the first figure B1 and second graph B2 of another target pattern B Also it differs larger, can also cause OPC effect, be then also required to lean in the first figure B1 of another target pattern B in the present embodiment At least one correction pattern, width of Lai Zengjia the first figure B1 close to second graph B2 are added on the side of nearly second graph B2 Size is spent, OPC effect is improved.

At this point, for the first figure side is not provided with another target pattern B of other target patterns, to it Adding at least one correction pattern can be with to increase the method for width dimensions of the first figure B1 at second graph B2 Are as follows: using the junction of the first figure B1 in another target pattern B and second graph B2 as starting point, along second direction, In Correction pattern one, correction pattern two ... correction pattern n are successively added in the side of the first figure B1, until described repair Spacing between the positive figure n and second graph B2 of another target pattern B1 is more than or equal to second threshold, and described second Threshold value is between 100~150nm.

Wherein, it should be noted that when the company of the first figure B1 and second graph B2 in another target pattern B When connecing edge of the place positioned at the second graph B2, specifically adds and repair on a wherein side of the first figure B1 Positive figure (such as can refer to attached drawing 3), and if the first figure B1 in another target pattern B and second graph B2 When junction is located at the non-edge of the second graph B2, specifically adds and repair on two sides of the first figure B1 Positive figure (such as attached drawing 5 can be referred to).

As described above, being come by adding at least one correction pattern in the side of the first rectangle of target pattern A A1 Increase width dimensions of the first figure A1 of the target pattern A at second graph A2, shortens the first figure A1 and second Gap between the width dimensions of both figure A2 in a first direction, and pass through the first figure in another target pattern B At least one correction pattern is added in the side of B1, to shorten both first figure B1 and second graph B2 in a first direction Gap between width dimensions, in this way, the first figure and second in the either objective pattern in the domain can be made Gap between the width dimensions of figure in a first direction is smaller, then is held based on the either objective pattern in the domain When row exposing operation, can to avoid light the junction of the first figure and second graph due to occur light interference or light Diffraction effect and caused by photic-energy transfer unevenness problem, ensure that in the actual pattern being finally formed on the substrate The first figure and the junction of second graph be not in broken string phenomenon, improve optical proximity effect.

Further, it should be noted that the second graph B1's and the target pattern A of another target pattern B The distance between first figure A1 is relatively short, at this point, executing exposure based on the target pattern A and another target pattern B When operation, the second graph B2 is easily adhered with the first figure A1, then the accuracy that will lead to exposing operation reduces, and can also be made The pattern that must be ultimately formed on a semiconductor substrate is distorted.

Further include having in the modification method in the present embodiment based on this: in another target pattern with the target At least one figure is excavated in adjacent edge by the first figure of pattern institute, to increase another target pattern and the target Spacing between first figure of pattern.

Specifically, the second graph B2 of another target pattern B have with the first figure A1 of the target pattern A close to Salient angle L (refer to Fig. 3), also, the wedge angle of the salient angle L is in face of the first figure A1 and second graph in the target pattern The junction of A2.Based on this, the method that at least one figure is excavated in another target pattern can be with are as follows: with described convex Angle is starting point, along second direction M, in another target pattern with the adjacent side of first figure of target pattern institute At edge, figure one, figure two ... figure n are successively excavated, wherein the figure one, figure two ... figure n are Width dimensions on one direction are sequentially reduced, also, the width dimensions on M are less than or equal to institute to the figure one in a first direction State 1/5th of the width dimensions of second graph in a first direction.

Wherein, it should be noted that the sum of the figure one, the width of figure two ... figure n in a second direction It should be greater than being equal to the second graph in the width dimensions of second direction.

Specifically, the first figure A1 in the target pattern only second graph B2 with another target pattern B Close to, and not with the first figure B1 of another target pattern B close to when, such as can be with reference to shown in Fig. 6 and Fig. 7, described another The method of at least one figure is excavated in one target pattern specifically: using the salient angle as starting point, along second direction M, in institute Figure one, figure two ... figure n are successively excavated, at this point, described in the edge for stating another target pattern second graph B2 The sum of figure one, the width of figure two ... figure n in a second direction should be equal to the second graph in second direction Width dimensions.

Exemplary, Fig. 8 is domain structure after having excavated figure in the second graph B2 of another target pattern in Fig. 6 Schematic diagram, Fig. 9 are the schematic diagram of domain structure after having excavated figure in the second graph B2 of another target pattern in Fig. 7, such as Shown in Fig. 8 and Fig. 9, using the salient angle L as starting point, along second direction N another target pattern B second graph Figure one, figure two, figure three, figure four have successively been excavated in the edge of B2, also, with reference to Fig. 8 and Fig. 9 it is found that described The sum of the width dimensions of figure one, figure two, figure three, figure four on second direction N k's and another target pattern B Width dimensions of the second graph B2 on second direction N are equal.

And the second graph B2 and the as the first figure A1 and another target pattern B in the target pattern One figure B1 close to when, such as can be refering to what is shown in Fig. 3, then excavating at least one figure in another target pattern Method specifically: using the salient angle as starting point, along second direction M, be in close proximity to the first figure in another target pattern Figure one, figure two ... figure n are successively excavated in the edge of the second graph B2 of shape A1 and the first figure B1.At this point, The sum of the figure one, the width of figure two ... figure n in a second direction should be greater than the second graph second The width dimensions in direction.

Exemplary, Figure 10 is domain structure after having excavated figure in the second graph B2 of another target pattern in Fig. 3 Schematic diagram, as shown in Figure 10, using the salient angle L as starting point, along second direction N being in close proximity in another target pattern B Figure one, figure two, figure three, figure have successively been excavated in the edge of the second graph B2 of first figure A1 and the first figure B1 Shape four, figure five, also, with reference to Figure 10 it is found that the figure one, figure two, figure three, figure four, figure five are second The sum of width dimensions on the N of direction h, width of the second graph B2 on second direction N greater than another target pattern B Size.

Then from the above mentioned, in the present embodiment, by using the salient point as starting point, along second direction, described another At least one figure is excavated in target pattern B, so that between the salient angle L and the correction pattern of another target pattern B Spacing become larger, while it is (specific that the spacing of the side of another target pattern B and the first figure A1 is also become larger It can be with comparison diagram 6 and Fig. 8, Fig. 7 and Fig. 9, Fig. 3 and Figure 10).In this way, being held when based on the target pattern and another target pattern When row exposing operation, it can be adhered to avoid the target pattern and another target pattern, it is ensured that the exposure The correct execution of operation, ensures that the pattern ultimately formed on a semiconductor substrate is consistent with territory pattern, improves light Learn kindred effect.

In addition, it should be noted that, above-mentioned figure one can be identical as the geomery of correction pattern one, above-mentioned figure Shape two can and correction pattern two geomery it is identical ... figure n can be identical as the geomery of correction pattern n, And the correction pattern one, correction pattern two ... correction pattern n, and, the figure one, figure two ... figure Shape n for example can be rectangle.

It should also be noted that, the above-mentioned amendment operation to the domain executes on computers, and, In the present embodiment, it specifically can be based on bias or if Do statement and execute.

In conclusion domain modification method provided by the invention, can first provide includes the original of at least two target patterns Domain, also, include the first figure of second graph and strip structure in target pattern, and the first figure and second graph Connection.Also, it can be added at least on the side of the second graph in the first figure of the target pattern in the present invention One correction pattern can so contract for increasing the first figure in target pattern close to the width dimensions of second graph part Gap between both short first figure and the second graph width dimensions, then when executing exposure based on the target pattern When light technology, it can effectively avoid in the junction of first figure and the second graph since optical proximity effect occurs The problem of the unevenness of photic-energy transfer caused by and prevents the first figure and second in the actual pattern being eventually formed in substrate The phenomenon that junction of figure is broken ensures that the actual pattern being eventually formed in substrate will not be distorted.

Further, the one or both sides of the first figure of the target pattern in original layout can be provided with another target Pattern, also, the second graph of the target pattern and another target pattern interval are arranged, another target pattern Second graph also there is the adjacent salient angle of the first figure with the target pattern.It, can also be with described in the present invention based on this The salient angle of another target pattern is starting point, in another target pattern and the adjacent edge of the first figure, successively Excavate figure one, figure two ... figure n, to increase the spacing between another target pattern and first figure, In this way, can effectively avoid the first figure in another target pattern and the target pattern when executing exposure technology Be adhered together, it is ensured that the actual pattern being eventually formed in substrate will not be distorted.

Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with its The difference of his embodiment, the same or similar parts in each embodiment may refer to each other.For being disclosed in embodiment For system, due to corresponding to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part Explanation.

Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.