阅读说明：本技术 一种氧化物薄膜晶体管的制备方法 (A kind of preparation method of oxide thin film transistor ) 是由 裴艳丽 陈树坚 于 2019-08-09 设计创作，主要内容包括：本发明涉及半导体器件技术领域,涉及一种氧化物薄膜晶体管的制备方法。1)薄膜晶体管的有源层氧化物半导体如ZnO、In2O3、IGZO、IZO等采用溶液法旋涂或者印刷成膜；2)通过调节氧化物半导体溶液前驱体的浓度,使每层氧化物半导体的厚度控制在1-3nm之间,利用紫外照射和加热相结合的后处理方式迅速成膜；并多次重复达到氧化物半导体有源层的厚度；3)后处理温度小于300度；本发明的优势在于：1)通过这种制备方法有利于消除薄膜中的缺陷,形成更加致密的氧化物有源层；2)利用溶液法可大大降低制备成本；3)每层厚度薄,结合紫外照射有利于降低制备温度；本发明将为柔性可印刷高质量薄膜晶体管提供一种可行的技术方案。(The present invention relates to technical field of semiconductor device, are related to a kind of preparation method of oxide thin film transistor.1) active layer oxide semiconductor such as ZnO, In2O3, IGZO, IZO of thin film transistor (TFT) etc. are using solwution method spin coating or printing film forming；2) by adjusting the concentration of oxide semiconductor solution presoma, make the thickness control of every layer of oxide semiconductor between 1-3nm, the post processing mode rapid film formation combined using ultraviolet irradiation and heating；And the thickness for reaching oxide semiconductor active layer is repeated several times；3) post-processing temperature is less than 300 degree；Present invention has an advantage that 1) be conducive to eliminate the defects of film by this preparation method, finer and close oxide active layer is formed；2) preparation cost can be substantially reduced using solwution method；3) every thickness degree is thin, advantageously reduces preparation temperature in conjunction with ultraviolet irradiation；The present invention will provide a kind of feasible technical solution for flexible printable high-quality thin film transistor.)

1. a kind of preparation method of oxide thin film transistor, which is characterized in that the oxide of oxide thin film transistor is partly led Body active layer is prepared using solwution method plane SH wave, reaches thickness required for active layer, every layer of thickness by plane SH wave Control is in the thickness range of several atomic layers；The preparation method of the every tunic of active layer is identical；Wherein, the step of prepared by every tunic Include:

S1. spin coating is carried out on substrate using low concentration precursor solution, pre-processed on hot plate after spin coating, it is pretreated Time is 2~5min, and temperature is 70~120 degree；

S2. after pre-processing, the active layer of deposition is placed in ultraviolet heating plate and continues to anneal, at this point, the temperature of heating plate is 150 ~250 degree；

S3. by completing the deposition of monofilm after step S1~S2.

2. a kind of preparation method of oxide thin film transistor according to claim 1, which is characterized in that pass through presoma Concentration regulation control every layer of thickness, assist heat treatment to accelerate the volatilization of solvent and solute in presoma using ultraviolet irradiation Reaction, fast low temperature film forming.

3. a kind of preparation method of oxide thin film transistor according to claim 2, which is characterized in that every tunic sinks Product is with a thickness of 1~3nm.

4. a kind of preparation method of oxide thin film transistor according to claim 2, which is characterized in that every layer of active layer Material can be independently selected from any one in ZnO, In2O3, IGZO, IZO.

5. a kind of preparation method of oxide thin film transistor according to claim 2, which is characterized in that the solution Method includes ink-jet printing, spin-coating method or print process.

Technical field

The present invention relates to technical field of semiconductor device, more particularly, to a kind of preparation of oxide thin film transistor Method.

Background technique

Currently, mainly preparing film crystal using the method for vacuum coating in the preparation of oxide thin film transistor The active layer (semiconductor layer) of pipe.But this method is needed using expensive vacuum coating equipment, higher cost.Solwution method Due to having many advantages, such as low cost, it is easily flexible and can large area production and have received widespread attention.As people are for electricity Sub- product low cost and the growing pursuit of convenience, the ecology potential of solwution method thin film transistor (TFT) must obtain bigger promotion And attention.

When preparing oxide thin film transistor active layer using solwution method, the preparation temperature of active layer is limited with flexibility Plastics are the development of the flexible display device of substrate；The compactness of active layer makes the performance of thin film transistor (TFT) be difficult to reach application It is required that.Therefore, have great importance by solwution method low temperature preparation high performance thin film transistor.

Summary of the invention

The present invention is to overcome above-mentioned defect in the prior art, provides a kind of preparation method of oxide thin film transistor, It is intended to improve the performance indexes of the thin film transistor (TFT) of existing solwution method preparation, keeps it preferably aobvious with Flexible Displays and printing Show and is mutually compatible with.

In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of preparation of oxide thin film transistor The oxide semiconductor active layer of method, oxide thin film transistor is prepared using solwution method plane SH wave, is similar to atomic layer Deposition reaches thickness required for active layer by plane SH wave, the thickness range of every layer of thickness control in several atomic layers It is interior；The preparation method of the every tunic of active layer is identical；Wherein, every tunic prepare the step of include:

S1. spin coating is carried out on substrate using low concentration precursor solution, pre-processed on hot plate after spin coating, it is pre- to locate The time of reason is 2~5min, and temperature is 70~120 degree；

S2. after pre-processing, the active layer of deposition is placed in ultraviolet heating plate and continues to anneal, at this point, the temperature of heating plate It is 150~250 degree；

S3. by completing the deposition of monofilm after step S1~S2.

The present invention stacks form oxidation in layer to improve the compactness of oxide semiconductor and reduce preparation temperature Object semiconductor active layer, the thickness of every layer of thickness control in several atomic layers；Before configuring low concentration oxygen compound semiconductor Liquid solution is driven, Multiple depositions reach thickness required for active layer, improve the compactness of oxide semiconductor active layer.It improves The performance indexes of the thin film transistor (TFT) of existing solwution method preparation, keeps it preferably mutually simultaneous with Flexible Displays and typographical display Hold.

Further, the thickness that every layer is controlled by the concentration regulation of presoma assists heating using ultraviolet irradiation Accelerate the volatilization of solvent and the reaction of solute in presoma, fast low temperature film forming.

Preferably, the deposition thickness of every tunic is 1~3nm.Every layer of very thin thickness, processing rear film have fine and close low The feature of defect.

Preferably, the material of every layer of active layer can be independently selected from any one in ZnO, In2O3, IGZO, IZO.

Preferably, the solwution method includes ink-jet printing, spin-coating method or print process.

Compared with prior art, beneficial effect is: a kind of preparation method of oxide thin film transistor provided by the invention, It is similar to the depositional mode of atomic layer, regulating and controlling oxide semiconductor by control control oxide semiconductor precursor concentration has The thickness of active layer is in the range of several atomic layers；Reach thickness required for active layer by plane SH wave.Pass through this side Method advantageously reduces the defects of film, forms finer and close oxide active layer；Preparation can be substantially reduced using solwution method Cost；Every thickness degree is thin, advantageously reduces preparation temperature in conjunction with ultraviolet irradiation；The present invention will be flexible printable high-quality thin film Transistor provides a kind of feasible technical solution.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of oxide thin film transistor prepared by the present invention.

Fig. 2 is the structural schematic diagram of the oxide thin film transistor prepared in the embodiment of the present invention

Fig. 3 is the oxide of the oxide thin film transistor and conventional method preparation using method provided by the invention preparation The transfer characteristic comparison diagram of thin film transistor (TFT).

Fig. 4 is the oxide of the oxide thin film transistor and conventional method preparation using method provided by the invention preparation The output characteristics comparison diagram of thin film transistor (TFT).

Fig. 5 is the oxide of the oxide thin film transistor and conventional method preparation using method provided by the invention preparation The indices comparison diagram of thin film transistor (TFT).

Specific embodiment

Attached drawing only for illustration, is not considered as limiting the invention；In order to better illustrate this embodiment, attached Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art, The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of positional relationship is described in attached drawing Illustrate, is not considered as limiting the invention.

The preparation method of a kind of oxide thin film transistor provided by the invention, as shown in Fig. 2, oxide thin film transistor Including grid 1, it is incorporated in the insulating layer 2 on 1 surface of grid, in the active layer 3 of 2 surface of insulating layer setting, in active layer 3 far from absolutely 2 surface both ends of edge layer are respectively set and 5 (or 4) of non-touching source electrode 4 (or 5) and drain electrode, wherein active layer 3 includes successively It is incorporated in the relatively thin active layer 3 of the multi-layered thickness on 2 surface of insulating layer, specifically, multilayer active layer 3 has the first active layer 31, the Two active layers 32, third active layer 33, the 4th active layer 34, each layer active layer 3 all have identical and relatively thin thickness 2-3nm.

In the present embodiment, every layer of active layer 3 can be independently selected from any one of ZnO, In2O3, IGZO, IZO.

Specifically, a kind of solwution method class atomic layer deposition technology of preparing of oxide thin film transistor provided by the invention, Firstly, 3 material solution of InOx active layer of configuration 0.05M/L, is placed magnetic stirrer stirring for 24 hours, while standing for 24 hours； Specifically, 3 material solution of InOx active layer by nitric hydrate indium (In (NO3) 34H2O, Alfa Aesar, 99.99%) and Dimethoxy-ethanol (2ME, Sigma-Aldrich, 99.9%) configures；3 material solution of active layer will have 100nm on surface The heavily-doped Si on piece (Si/SiO2) of the silica of thermal oxide growth deposits multilayer InOx film by class atomic layer mode.Tool The step of body, is as follows:

S1. substrate is cleaned by ultrasonic first using acetone and isopropanol, is rinsed and used with deionized water and is dried with nitrogen；

S2. in order to allow 3 material solution of active layer to be spin-coated on silicon chip surface, while improving the boundary of insulating layer 2 Yu active layer 3 Face state carries out surface plasma processing to cleaned silicon wafer, and the microwave-excitation power of plasma is 350w, is passed through simultaneously The oxygen of 100sccm (standard milliliters/minute), processing time are 15 minutes；

S3. carry out spin coating using 3 material solution of active layer that has stood for 24 hours, spincoating conditions be revolving speed 4300rpm (turn/ Minute), continue 30 seconds；

S4. it is immediately placed in 100 DEG C of heating plate and anneals 5 minutes after spin coating is complete, specifically, pre-annealing process is to steam Send out partial solvent, reduce film post-processing in be protected from environmental；

S5. the silicon wafer for being deposited with InOx is placed in ultraviolet heating plate the 25min that anneals after preannealing, specifically, Introduce ultraviolet irradiation, in order to remove the organic residue in film；

S6. the InOx film of a layer thickness 2-3nm is just completed by step S4 and S5；

S7. by repeating step S4 and S5, multilayer InOx film is deposited, specifically, using 4 layers of InOx film conduct here Active layer 3.

The embodiment of the present invention makes every layer of oxide semiconductor by using 0.05M/L oxide semiconductor precursor solution Thickness control in 2-3nm, and the thickness for reaching required oxide semiconductor active layer 3 is repeated several times.Specifically, by this Solwution method class technique for atomic layer deposition is conducive to eliminate the defects of film, forms finer and close oxide active layer 3.

Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention Protection scope within.