阅读说明：本技术 掩模版及其制造方法、光刻方法、显示面板、曝光装置 (Mask and its manufacturing method, photolithography method, display panel, exposure device ) 是由 王登峰 芮洲 周茂秀 杨海鹏 郭磊 陈琳 于 2019-09-26 设计创作，主要内容包括：本发明公开了一种掩模版,至少包括：第一透光区,设置有第一滤光膜；第二透光区,设置有第二滤光膜；其中,所述第一滤光膜和第二滤光膜能够滤除的光线的频率范围不同。本发明还公开了一种掩模版制造方法、光刻方法、显示面板、显示装置和曝光装置。(The invention discloses a kind of masks, include at least: the first transparent area is provided with the first filter coating；Second transparent area is provided with the second filter coating；Wherein, the frequency range for the light that first filter coating and the second filter coating can filter out is different.The invention also discloses a kind of mask manufacturing method, photolithography method, display panel, display device and exposure devices.)

1. a kind of mask, which is characterized in that include at least:

First transparent area is provided with the first filter coating；

Second transparent area is provided with the second filter coating；

Wherein, the frequency range for the light that first filter coating and the second filter coating can filter out is different.

2. mask according to claim 1, which is characterized in that first transparent area and the second transparent area are staggeredly set It sets.

3. mask according to claim 1, which is characterized in that first transparent area and the second transparent area have pectination Part.

4. mask according to claim 1, which is characterized in that first filter coating and the second filter coating are semi-transparent Film.

5. a kind of mask manufacturing method characterized by comprising

The first transparent area and the second transparent area are formed on mask substrate；

The first filter coating is formed in first transparent area；

The second filter coating is formed in second transparent area；

Wherein, the frequency range for the light that first filter coating and the second filter coating can filter out is different.

6. according to the method described in claim 5, it is characterized in that, forming the first filter coating in first transparent area and in institute State at least one step that the second transparent area is formed in the second filter coating, comprising:

Filter is coated on the mask substrate；

The filter of nontarget area is removed, and retains the filter of target area；

Wherein, the target area corresponds to first transparent area or the second transparent area.

7. a kind of photolithography method realized using the described in any item masks of claim 1-4 characterized by comprising

Photoresist is coated on to photoetching object；

The mask is placed in contraposition；

The photoresist is exposed through the mask plate using the light with first frequency；

The photoresist is exposed through the mask plate using the light with second frequency；

Wherein, the light with first frequency is only capable of through first filter coating, the light with second frequency It is only capable of through second filter coating.

8. the method according to the description of claim 7 is characterized in that the photoresist includes the first resin, first resin For with flowering structure:

In formula (I),

Xa indicates hydrogen atom or alkyl, also,

The group that Rx indicates hydrogen atom or can decompose and leave away by the effect of acid.

9. according to the method described in claim 8, it is characterized in that, the photoresist includes the second resin, second resin For with flowering structure:

In formula (II),

R₀Indicate hydrogen atom or alkyl,

R₁To R₃Each independently indicate alkyl or cycloalkyl, also,

R₁To R₃In two can form to form monocycle or polycyclic naphthene base.

10. a kind of display panel, which is characterized in that including pixel electrode and public electrode；The pixel electrode and public electrode In at least one using claim 7-9 described in any item photolithography methods manufacture.

11. display panel according to claim 10, which is characterized in that in the pixel electrode and public electrode at least One is comb electrode.

12. display panel according to claim 10, which is characterized in that the display panel is ADS display panel.

13. a kind of display panel, which is characterized in that including data line, the data line two sides are provided with for shielding interference electricity The bucking electrode of field；The bucking electrode is using the described in any item photolithography method manufactures of claim 7-9.

14. a kind of display device, which is characterized in that including such as described in any item display panels of claim 10-13.

15. a kind of exposure device characterized by comprising

Luminescence unit is configured as the light that light source issues being converted to directional light；

Filter unit is configured as the directional light being filtered into the light with first frequency or second frequency.

16. device according to claim 15, which is characterized in that the filter unit, comprising:

First optical filtering portion is configured as the directional light being filtered into the light with first frequency；

Second optical filtering portion is configured as the directional light being filtered into the light with second frequency；

Switching mechanism is configured as switching first optical filtering portion and the second optical filtering portion so that first optical filtering portion or the second filter Light portion is towards the directional light.

17. device according to claim 15, which is characterized in that the luminescence unit, comprising:

Light source is configured as emitting beam；

Reflector is configured as the light being converted to directional light.

Technical field

The present invention relates to field of display technology, a kind of mask and its manufacturing method, photolithography method, display surface are particularly related to Plate, exposure device.

Background technique

Liquid crystal display can use photoetching process, photoresist coating in production array substrate and the process of color membrane substrates Mask (Mask) irradiation light photoresist (PR) is penetrated with UV light afterwards, is developed after exposure-processed, then is removed with alkalies by illumination portion The PR divided, to form PR pattern corresponding with Mask.Using PR pattern as mask, base material is etched, to realize figure Transfer from Mask to substrate.

In actual production, panel factory determines therewith in post-exposure machine resolution ratio of founding the factory, and can not change easily, such as When exposure machine precision is 3 μm, just it is difficult to further reduce the precision.It is limited to equipment exposure accuracy inherent shortcoming, although Resolution ratio can be improved by the enhancing exposure technique such as phase shift compensation, but room for promotion is limited.

Summary of the invention

In view of this, the first purpose of the embodiment of the present invention is, a kind of mask and its manufacturing method, photoetching side are proposed Method, display panel, exposure device can breach the resolution ratio limitation of exposure machine to a certain extent.

Based on above-mentioned purpose, the first aspect of the embodiment of the present invention provides a kind of mask, includes at least:

First transparent area is provided with the first filter coating；

Second transparent area is provided with the second filter coating；

Wherein, the frequency range for the light that first filter coating and the second filter coating can filter out is different.

Optionally, first transparent area and the second transparent area are staggered.

Optionally, first transparent area and the second transparent area have comb section.

Optionally, first filter coating and the second filter coating are semi-permeable membrane.

The second aspect of the embodiment of the present invention provides a kind of mask manufacturing method, comprising:

The first transparent area and the second transparent area are formed on mask substrate；

The first filter coating is formed in first transparent area；

The second filter coating is formed in second transparent area；

Wherein, the frequency range for the light that first filter coating and the second filter coating can filter out is different.

Optionally, the first filter coating is formed in first transparent area and form the second filter coating in second transparent area In at least one step, comprising:

Filter is coated on the mask substrate；

The filter of nontarget area is removed, and retains the filter of target area；

Wherein, the target area corresponds to first transparent area or the second transparent area.

In terms of the third of the embodiment of the present invention, a kind of photolithography method realized using the mask, packet are provided It includes:

Photoresist is coated on to photoetching object；

The mask is placed in contraposition；

The photoresist is exposed through the mask plate using the light with first frequency；

The photoresist is exposed through the mask plate using the light with second frequency；

Wherein, the light with first frequency is only capable of through first filter coating, described with second frequency Light is only capable of through second filter coating.

Optionally, the photoresist includes the first resin, and first resin is with flowering structure:

In formula (I),

Xa indicates hydrogen atom or alkyl, also,

The group that Rx indicates hydrogen atom or can decompose and leave away by the effect of acid.

Optionally, the photoresist includes the second resin, and second resin is with flowering structure:

In formula (II),

R₀Indicate hydrogen atom or alkyl,

R₁To R₃Each independently indicate alkyl or cycloalkyl, also,

R₁To R₃In two can form to form monocycle or polycyclic naphthene base.

4th aspect of the embodiment of the present invention, provides a kind of display panel, including pixel electrode and public electrode；Institute At least one stated in pixel electrode and public electrode is manufactured using the photolithography method.

Optionally, at least one in the pixel electrode and public electrode is comb electrode.

Optionally, the display panel is ADS display panel.

5th aspect of the embodiment of the present invention, provides a kind of display panel, including data line, the data line two sides It is provided with the bucking electrode for shielding electric interfering field；The bucking electrode is manufactured using the photolithography method.

6th aspect of the embodiment of the present invention, provides a kind of display device, including the display panel.

7th aspect of the embodiment of the present invention, provides a kind of exposure device, comprising:

Luminescence unit is configured as the light that light source issues being converted to directional light；

Filter unit is configured as the directional light being filtered into the light with first frequency or second frequency.

Optionally, the filter unit, comprising:

First optical filtering portion is configured as the directional light being filtered into the light with first frequency；

Second optical filtering portion is configured as the directional light being filtered into the light with second frequency；

Switching mechanism is configured as switching first optical filtering portion and the second optical filtering portion so that first optical filtering portion or Two optical filtering portions are towards the directional light.

Optionally, the luminescence unit, comprising:

Light source is configured as emitting beam；

Reflector is configured as the light being converted to directional light.

From the above it can be seen that mask provided in an embodiment of the present invention, can filter out different frequency by setting Two kinds of transparent areas of light, so as to complete photoetching process by double exposure by using the light of different frequency, this Sample avoids because the limitation of resolution ratio caused by interfering, realizes fine gap (Slit) structure.

Mask made from mask manufacturing method provided in an embodiment of the present invention, can filter out the two of different frequency light Kind transparent area, so as to complete photoetching process by double exposure by using the light of different frequency, this avoid Because the limitation of resolution ratio caused by interfering, realizes fine gap (Slit) structure.

The photolithography method carried out using mask provided in an embodiment of the present invention, because mask can filter out different frequency Two kinds of transparent areas of light, mask only need to be aligned once with base station, so that it may be passed through by using the light of different frequency Double exposure is crossed to complete photoetching process, and then forms the photoetching agent pattern being interspersed, this avoid because interference causes Resolution ratio limitation, so as to obtain fine gap (Slit) structure on to photoetching object.

Display panel provided in an embodiment of the present invention and display device, electrode therein are manufactured using the photolithography method, It can be improved the transmitance of display panel and display device.

The exposure device provided in an embodiment of the present invention is carried out the directional light of luminescence unit tentatively by filter unit Optical filtering processing, prevent thering is interference light to penetrate in step of exposure from the transparent area that the non-step of exposure works, influence to expose Light effect.

Detailed description of the invention

In order to illustrate the technical solution of the embodiments of the present invention more clearly, the attached drawing to embodiment is simply situated between below It continues, it should be apparent that, the accompanying drawings in the following description merely relates to some embodiments of the present invention, rather than limitation of the present invention.

Fig. 1 is a kind of light path system schematic diagram of exposure machine；

Fig. 2 is light intensity distribution schematic diagram when carrying out photoetching process using mask；

Fig. 3 is a kind of structural schematic diagram of mask provided in an embodiment of the present invention；

Fig. 4 is a kind of overlooking structure diagram of mask provided in an embodiment of the present invention；

Fig. 5 is the structural schematic diagram of another mask provided in an embodiment of the present invention；

Fig. 6 is a kind of flow diagram of mask manufacturing method provided in an embodiment of the present invention；

Fig. 7 A is to form the mask structural schematic diagram after transparent area in the embodiment of the present invention on mask substrate；

Fig. 7 B is the mask structural schematic diagram in the embodiment of the present invention after the first transparent area forms the first filter coating；

Fig. 8 is a kind of flow diagram of photolithography method provided in an embodiment of the present invention；

Fig. 9 A is in the embodiment of the present invention in the schematic diagram to coat photoresist on photoetching object；

Fig. 9 B is the schematic diagram that the mask is placed in contraposition in the embodiment of the present invention；

Fig. 9 C be the embodiment of the present invention in using with first frequency light through the mask plate to the photoresist into The schematic diagram of row exposure；

Fig. 9 D be the embodiment of the present invention in using with second frequency light through the mask plate to the photoresist into The schematic diagram of row exposure；

Fig. 9 E is to obtain the schematic diagram of final photoetching agent pattern in the embodiment of the present invention；

Figure 10 is the process signal of the photolithography method of the slave depression angle observation by taking mask shown in Fig. 4 as an example Figure；

Figure 11 is a kind of structure of block diagram schematic diagram of exposure device provided in an embodiment of the present invention；

Figure 12 A is the structural schematic diagram of filter unit in the embodiment of the present invention；

Figure 12 B is the overlooking structure diagram of filter unit in the embodiment of the present invention.

Specific embodiment

In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill Personnel's every other embodiment obtained under the premise of being not necessarily to creative work, shall fall within the protection scope of the present invention.

Unless otherwise defined, the technical term or scientific term that the disclosure uses should be tool in fields of the present invention The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the disclosure and similar word are simultaneously Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts.Equally, "one", " one " or The similar word such as person's "the" does not indicate that quantity limits yet, but indicates that there are at least one." comprising " or "comprising" etc. are similar Word mean to occur element or object before the word cover the element for appearing in the word presented hereinafter or object and its It is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " be not limited to physics or The connection of person's machinery, but may include electrical connection, it is either direct or indirect."upper", "lower", " left side ", " right side " etc. is only used for indicating relative positional relationship, after the absolute position for being described object changes, then the relative positional relationship May correspondingly it change.

Fig. 1 shows a kind of light path system schematic diagram of exposure machine.

Traditional ultraviolet exposure machine uses high-pressure sodium lamp as light source, and the light emitting angle of high-pressure sodium lamp is 360 degree, passes through phase When the reflector and larger distance of large area carry out light beam adjustment, the light that light source issues is converted into ideal parallelism light, so Afterwards, on the photoresist (PR) the figure equal proportion on mask being transferred to below mask by directional light, then by etching, by PR On pattern transfer to substrate on (as without especially mark, refer in particular to positive photoresist herein).The radiation scope of high-pressure sodium lamp is from purple Wave section covers visible light wave range, but only some UVA-UVB sections of spectrum is to may act on uv-exposure purposes, other The radiation of spectral band will cause environment temperature raising, it is therefore desirable to arrange in pairs or groups cooling system and air-conditioning equipment.

In entire manufacturing process, many because being known as of exposure accuracy are influenced, such as the alignment accuracy of Mask and substrate, PR glue Surface flatness etc., wherein light is most critical factor by interference caused by the edge reticle pattern (Mask Pattern), As shown in Figure 2.For theoretical calculation it is found that characteristic size b is there are limit minimum value, formula is as follows:

Wherein, bmin is the achievable minimum feature size of photoetching, and S is the distance between mask and photoresist, and λ is exposure With optical wavelength, Z is photoresist thickness.

Characteristic size herein can refer to the entity size or hollow out size of reticle pattern, the two object having the same Manage meaning.

It can be seen that because minimum feature size bmin is influenced by interfering, so that resolution limitations (or the essence of exposure machine Degree is limited), in single exposure step, the spacing in light transmission section cannot be less than minimum feature size bmin, so that exposure machine Build-in attribute limits the manufacture of smaller critical size (CD) figure.

Fig. 3 shows a kind of structural schematic diagram of mask provided in an embodiment of the present invention.

As shown in figure 3, the mask, comprising:

First transparent area is provided with the first filter coating 21；

Second transparent area is provided with the second filter coating 22；

Wherein, the frequency range for the light that first filter coating 21 can be filtered out with the second filter coating 22 is different.

Optionally, as shown in figure 3, the mask further includes substrate material (mask substrate) 10 and mask pattern 20, The mask pattern 20 is made of transparent area and entity area 24, and wherein transparent area can at least penetrate the light of specific frequency Line.In the present embodiment, first transparent area and the second transparent area be because be provided with different filter coatings, enables the two The frequency of the light of transmission is different.

In this way, can use with first frequency and can pass through when carrying out photoetching process using the mask The light of first filter coating 21 first carries out illumination, and the light with first frequency can't be by being provided with second at this time Then second transparent area of filter coating 22 can simultaneously be carried out again using with second frequency by the light of second filter coating 22 Illumination, and the light with second frequency can't be by being provided with the first transparent area of the first filter coating 21, so that the at this time One transparent area and the second transparent area can be the interval of another transparent area mutually, to reduce influence caused by interference, Jin Ershi Minimum feature size is reduced on border.As shown in figure 3, size b, that is, bmin, L value can customize.It exposes for the first time, due to Upper first filter coating 21 of Mask and the second filter coating 22 are arranged alternately, therefore the interval region of two neighboring first filter coating 21 is affirmed Greater than the bmin of exposure machine；Second of exposure is carried out again after exposing for the first time, similarly, the interval of two neighboring second filter coating 22 Region is also greater than exposure machine bmin.

From above-described embodiment as can be seen that mask provided in an embodiment of the present invention, can filter out different frequencies by setting Two kinds of transparent areas of rate light, so as to complete photoetching process by double exposure by using the light of different frequency, This avoid because the limitation of resolution ratio caused by interfering, realizes fine gap (Slit) structure.

Optionally, refering to what is shown in Fig. 4, first transparent area and the second transparent area are staggered, by being staggered Light area so that adjacent transparent area will not use in a same step of exposure, and then reduces the influence of interference.

Optionally, refering to what is shown in Fig. 4, first transparent area and the second transparent area have comb section.In this way, using should The metal electrode of mask production has fine pectinate texture, can improve the transmitance of display panel.

Optionally, if bmin=3 μm of corresponding exposure machine, reachable ± 1.5 μm of the mask critical size precision.

For example, first filter coating 21 and the second filter coating 22 can use semi-permeable membrane or selective light-transmissive film, thus Realize the effect for filtering out the light of a certain frequency range.

Fig. 5 shows the structural schematic diagram of another mask provided in an embodiment of the present invention.

As shown in figure 5, the mask, comprising:

First transparent area is provided with the first filter coating 21；

Second transparent area is provided with the second filter coating 22；

Third transparent area is provided with third filter coating 23；

Wherein, the frequency for the light that first filter coating 21, the second filter coating 22 and third filter coating 23 can filter out Range is different.

As can be seen that transparent area is divided into three parts in the present embodiment, and it is different to distinguish rejection frequency range Light, this design can further decrease minimum feature size for previous embodiment, to obtain more Fine pattern.

Certainly, other than two above-mentioned embodiments, according to actual needs, in order to further obtain finer figure Case can also be further added by the transparent area that setting filters out different frequency light, and details are not described herein.

It should be noted that the Mask of the present embodiment needs reasonable partition graph, and the correctness for ensuring to divide, segmentation Photoresist is uniform after the when design it is contemplated that junction of two exposure areas will guarantee double exposure, prevents photoetching glue residua Cause to form short circuit in subsequent pattern.In addition, large scale sub-pattern is adopted when there is large scale sub-pattern in pattern to be formed With single exposure, and when there are fine size sub-pattern, and when fine pattern is more than exposure machine precision, Mask needs to carry out Segmentation design.

Fig. 6 shows a kind of flow diagram of mask manufacturing method provided in an embodiment of the present invention.

As shown in fig. 6, the mask manufacturing method, comprising:

Step 31: the first transparent area 21 ' and the second transparent area 22 ' are formed on mask substrate 10, as shown in Figure 7 A；

Step 32: forming the first filter coating 21 in first transparent area 21 ', as shown in Figure 7 B；

Step 33: forming the second filter coating 22 in second transparent area 22 ', as shown in Figure 3；

Wherein, the frequency range for the light that first filter coating 21 can be filtered out with the second filter coating 22 is different.

From above-described embodiment as can be seen that mask made from mask manufacturing method provided in an embodiment of the present invention, energy Two kinds of transparent areas of different frequency light are filtered out, enough so as to come by using the light of different frequency by double exposure At photoetching process, this avoid because the limitation of resolution ratio caused by interfering, realizes fine gap (Slit) structure.

Optionally, before forming transparent area, further include the steps that coating light screening material, the screening on mask substrate 10 Luminescent material can be crome metal (Cr).Optionally, description machine (one can be used the step of forming transparent area on mask substrate 10 Kind laser machine) utilize laser to form transparent area pattern on light screening material.Because the precision for describing machine is higher, being capable of more preferable landform At the transparent area of the mask with fine pattern.

Optionally, the first filter coating 21 is formed in first transparent area 21 ' and form the in second transparent area 22 ' At least one step in two filter coatings 22, comprising:

Filter is coated on the mask substrate 10；

The filter of nontarget area is removed, and retains the filter of target area；

Wherein, the target area corresponds to first transparent area or the second transparent area.

Here, when forming the first filter coating 21 using above-mentioned steps, the filter should be filtered out The material for the light that first filter coating 21 can filter out；Similarly, described when forming the second filter coating 22 using above-mentioned steps Filter should be correspondingly then the material for filtering out the light that the second filter coating 22 can filter out.

It should be noted that the sequencing for forming the first filter coating 21 and the second filter coating 22 does not limit, the two The structure that sequencing has no effect on finally formed mask is formed, is not required to be defined the sequencing.

Fig. 8 shows a kind of flow diagram of photolithography method provided in an embodiment of the present invention.

As shown in figure 8, the photoetching side realized using the arrangement of any embodiment or embodiment of the mask, combination Method, comprising:

Step 41: on photoetching object 50 coat photoresist 60, as shown in Figure 9 A；Optionally, described to photoetching object 50 can be arbitrary the object for needing that required pattern is formed by photoetching process, for example, array substrate, color membrane substrates etc..

Step 42: the mask is placed in contraposition, as shown in Figure 9 B.

Step 43: the photoresist 60 being exposed through the mask plate using the light with first frequency, is such as schemed Shown in 9C, the light with first frequency is only capable of through first filter coating 21, and is irradiated on photoresist 60 and is formed Corresponding photosensitive region 61.

Step 44: the photoresist 60 being exposed through the mask plate using the light with second frequency, is such as schemed Shown in 9D, the light with second frequency is only capable of through second filter coating 22, and is irradiated on photoresist 60 and is formed Corresponding photosensitive region 62.

It finally (is cleaned with alkaline solution to remove the region of light irradiation) by development treatment, obtains photoetching agent pattern (such as Shown in Fig. 9 E), desired pattern can be formed with further progress etching technics and then on to photoetching object 50.

Figure 10 shows the process of the above-mentioned photolithography method from depression angle by taking mask shown in Fig. 4 as an example.Its In, it is successively that coating photoresist → first time exposure → second of exposure → finally etches obtained pattern from left to right.

From above-described embodiment as can be seen that using mask provided in an embodiment of the present invention carry out photolithography method because Mask can filter out two kinds of transparent areas of different frequency light, and mask only need to be aligned once with base station, so that it may logical It crosses and completes photoetching process by double exposure using the light of different frequency, and then form the photoetching agent pattern being interspersed, This avoid because resolution ratio caused by interfering limits, so as to obtain fine gap (Slit) on to photoetching object Structure.

It is recognised that suitable spacing L can be selected as needed, differentiated for example, can be obtained breakthrough when 6 μm of 0 < L < The line width of the rate limit, and edge interference effect is not had in exposure process；As shown in fig. 9e, as long as present invention setting L > 0, in fact Mask pattern two adjacent hollow-out part minimum spacings are 3 μm of bmin+L/2 > on border, therefore do not have the edge interference of light. For example, when L=2 μm, when bmin is 3 μm, the lines of wide 1 μm (L/2) can be formed, as shown in fig. 9e.

In this example by taking positive photoresist as an example, realize that high-precision lametta is wide below photoresist, according to Current protocols in shape At fining pattern when, can guarantee one of hollow out or entity be it is high-precision, as shown in fig. 9e, entity item finally etches can To realize the dimensional accuracy of < bmin, but hollow out adjacent thereto, can only still be reached in first time exposure, second of exposure respectively To prior art minimum feature size bmin allowed.

As shown in Fig. 4 and Figure 10, targeted graphical entity line thickness < bmin, to realize fine etching, complete mask Pattern is designed as the nested structure of the first filter coating and the second filter coating, and when exposing first time, only the first filter coating has light Through, at this time on photoresist exposure area width and spacing all >=bmin, and then expose for second, only the second filter coating has light Through, the exposure area width and spacing of the second filter coating also all >=bmin, but exposure for the first time and second of exposure is comprehensive Closing exposure effect realizes photoresist occlusion area < bmin, after the completion of double exposure, develops and etches, and targeted graphical is realized.

In addition, exposure light wavelength is also one of influence factor when calculating bmin, then when exposure filter coating by After first filter coating switches to the second filter coating, corresponding bmin value can also change.Therefore, if the first filter coating and second filters The corresponding minimum feature size of film is respectively bmin_A, bmin_B, and bmin_A > bmin_B, then sets bmin=bmin_A, Otherwise bmin_A < bmin_B, then set bmin=bmin_B, that is, take the first filter coating and the second filter coating corresponding minimum special The final bmin that biggish minimum feature size in size is mask is levied, is carried out in this way in the first filter coating and the second filter coating Switching can just all ensure that precision.

In some embodiments, the photoresist includes the first resin, and first resin is with flowering structure:

In formula (I),

Xa indicates hydrogen atom or alkyl, also,

The group that Rx indicates hydrogen atom or can decompose and leave away by the effect of acid.

Optionally, the specific structure of first resin can be following several.

In other embodiments, the photoresist includes the second resin, and second resin is with flowering structure:

In formula (II),

R₀Indicate hydrogen atom or alkyl,

R₁To R₃Each independently indicate alkyl or cycloalkyl, also,

R₁To R₃In two can form to form monocycle or polycyclic naphthene base.

Optionally, the specific structure of second resin can be following several.

It is recognised that the photoresist can be both including the first resin or including second in some optional embodiments Resin.

Above-mentioned photoresist embodiment is high contrast nonlinear optical photoresist, is exposed for the first time because exposing how many pairs for the second time Light figure can generate some influences, it is therefore desirable to and high contrast nonlinear optical photoresist absorbs the dim light from proximity exposure, but It not will form pattern, and then form more regular photoetching agent pattern after subsequent development, to guarantee the fine gap knot The precision of structure.

One embodiment of the present of invention additionally provides a kind of display panel.The display panel includes pixel electrode and public affairs Common electrode；At least one in the pixel electrode and public electrode uses any embodiment or embodiment of aforementioned photolithography method Arrangement, combination manufacture.In this way, the electrode when the display panel is manufactured using the photolithography method, the electrode precision is higher, And be conducive to improve transmitance.

Optionally, at least one in the pixel electrode and public electrode is comb electrode.Using the photolithography method Comb electrode is manufactured, fine gap (Slit) structure can be obtained, electrode precision is high.

Transmitance is the important optical quality of display panel, in conventional liquid crystal, final only about 5% light Display screen can be penetrated.Improving transmitance is the important means for promoting product competitiveness, reducing product power consumption, and conventional method includes No storage capacitance design optimization, reduction BM etc. brilliant using high transparent liquid.For ADS display pattern product, pixel electrode gap structure W/S ratio optimization can significantly improve panel transmitance, wherein W is metal line width, and S is adjacent wires spacing.Therefore, described When display panel is ADS (Advanced Super Dimension Switch, Senior super dimension field switch technology) display panel, Using the electrode of photolithography method manufacture ADS display panel, fine gap (Slit) structure can be obtained, and then is promoted aobvious Show the transmitance of panel.

One embodiment of the present of invention additionally provides another display panel.The display panel include data line (such as SD signal wire), the data line two sides are provided with the bucking electrode for shielding electric interfering field；The bucking electrode is using aforementioned The arrangement of any embodiment or embodiment of photolithography method, combination manufacture.

Because display panel is at work, nearby there are electric interfering fields for data line (such as SD signal wire), dry in order to reduce It disturbs electric field to impact data in data line, bucking electrode usually is set in data line two sides, but the width of bucking electrode is logical It is often wider, the transmitance of display panel can be had an impact, therefore, the present embodiment manufactures the screen using photolithography method above-mentioned Electrode is covered, the size of bucking electrode can be reduced, is conducive to improve aperture opening ratio, and then promote the transmitance of display panel.

One embodiment of the present of invention additionally provides a kind of display device, any embodiment including the display panel Or arrangement, the combination of embodiment.

It should be noted that display device in the present embodiment can be with are as follows: Electronic Paper, mobile phone, tablet computer, television set, Any products or components having a display function such as laptop, Digital Frame, navigator.

Figure 11 shows a kind of structure of block diagram schematic diagram of exposure device provided in an embodiment of the present invention.

As shown in figure 11, the exposure device includes:

Luminescence unit 70 is configured as the light that light source issues being converted to directional light；

Filter unit 80 is configured as the directional light being filtered into the light with first frequency or second frequency.

Optionally, when needing to complete exposure using the first transparent area, the filter unit 80 by the directional light mistake It filters as with first frequency light, when needing to complete exposure using the second transparent area, the filter unit 80 described will be put down Row light is filtered into second frequency light.Here light filtering is primary filtration, because light source (such as high-pressure sodium lamp) Radiation scope covers visible light wave range from ultraviolet band, but only some UVA-UVB sections of spectrum be may act on it is ultraviolet Purposes is exposed, primary filtration can preferably cooperate subsequent step of exposure.

From above-described embodiment as can be seen that the exposure device provided in an embodiment of the present invention, will be sent out by filter unit The directional light of light unit carries out preliminary optical filtering processing, prevents having interference light to work in step of exposure from the non-step of exposure Transparent area in through (for example, using the first transparent area realize exposure when, have interference light (or impurity light) from second Transparent area through and to should not the step expose photoresist be exposed), influence exposure effect.

Optionally, as shown in Figures 12 A and 12 B, the filter unit 80, comprising:

First optical filtering portion 81 is configured as the directional light being filtered into the light with first frequency；

Second optical filtering portion 82 is configured as the directional light being filtered into the light with second frequency；

Switching mechanism 83 is configured as switching first optical filtering portion 81 and the second optical filtering portion 82 so that described first filters Portion 81 or the second optical filtering portion 82 are towards the directional light.

As shown in Figures 12 A and 12 B, first optical filtering portion 81 and the second optical filtering portion 82 are respectively by a semicircular optical filtering Material is made, and the two is stitched together, and the switching mechanism 83 is arranged at central axes position, and the switching mechanism 83 passes through rotation Turn the position that first optical filtering portion 81 and the second optical filtering portion 82 can be switched.When need using the first optical filtering portion 81 complete filter When, by the first optical filtering portion 81 towards the directional light, when needing to complete to filter using the second optical filtering portion 82, the switching mechanism 83 can be by the second optical filtering portion 82 towards the directional light by rotation.

Optionally, the luminescence unit 70, comprising:

Light source is configured as emitting beam；

Reflector is configured as the light being converted to directional light.

Since light source is similar to point light source, therefore parabolic reflector lampshade is needed to realize that directional light, the filter unit 80 can be with Design the light-emitting window in the directional light.

Optionally, after 80 selectivity of filter unit is through the light of specific frequency, exposure intensity may accordingly drop It is low, but cross-linking reaction is mainly related with the overall light energy that receives when photoresist exposure, therefore can pass through and increase time for exposure or increasing Hg lamp irradiation intensity is added to guarantee exposure intensity.

Optionally, the exposure device of the embodiment of the present invention, in addition to the filter unit 80, remaining structure can with it is existing There is exposure machine to be consistent, does not change.

It should be pointed out that in the accompanying drawings, for the size that clearly may be exaggerated layer and region of diagram.And it can be with Understand, when element or layer be referred in another element or layer "upper", it can be directly in other elements, or may exist Intermediate layer.Additionally, it is appreciated that it can be directly at other when element or layer be referred in another element or layer "lower" Under element, or there may be the layer of more than one centre or elements.In addition, it is to be appreciated that when layer or element are referred to as Two layers or two elements " between " when, the layer that it can be only between two layers or two elements, or there may also be one Above middle layer or element.Similar reference marker indicates similar element in the whole text.

The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.