阅读说明：本技术 一种阻值范围为0.1ω/□～1ω/□的厚膜电阻浆料及其制备方法 (A kind of Standard resistance range is 0.1 Ω/~1 Ω/ thick-film resistor paste and preparation method thereof ) 是由 邱基华 于 2017-10-23 设计创作，主要内容包括：本发明是基于“CN2017000998988一种厚膜电阻浆料”的分案申请,本发明公开了一种阻值范围为0.1Ω/□～1Ω/□的厚膜电阻浆料,采用0.1Ω/□的厚膜电阻浆料和阻值为1Ω/□的厚膜电阻浆料以任意比例混合得到,得到的电阻浆料的电性能都不会恶化,具有良好的混合性能,且通过调节相邻阻值档的混合比例,可得到相邻两档阻值之间的任一阻值,不需要再制备中间阻值档,降低了生产制造成本。本发明还公开了该厚膜电阻浆料的制备方法。(The present invention is the divisional application based on " a kind of thick-film resistor paste of CN2017000998988 ", it is 0.1 Ω/~1 Ω/ thick-film resistor paste the invention discloses a kind of Standard resistance range, it uses 0.1 Ω/ thick-film resistor paste and resistance value is that 1 Ω/ thick-film resistor paste is mixed to get with arbitrary proportion, the electrical property of obtained resistance slurry will not all deteriorate, with good mixed performance, and the mixed proportion by adjusting adjacent resistance value shelves, any resistance value between adjacent two grades of resistance values can be obtained, it does not need to prepare intermediate resistance value shelves again, reduce manufacturing cost.The invention also discloses the preparation methods of the thick-film resistor paste.)

1. a kind of Standard resistance range be 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that the resistance slurry by Resistance value is 0.1 Ω/ thick-film resistor paste and resistance value is that 1 Ω/ thick-film resistor paste is made；

The resistance value is 0.1 Ω/ thick-film resistor paste and resistance value is that 1 Ω/ thick-film resistor paste includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35~ 75:25~65；

The resistance value is that the solid-phase component of 0.1 Ω/ resistance slurry includes at least one in solid-phase component a and solid-phase component b Kind；

The solid-phase component a includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO₂0~ 20% and glass composition 5~30%；The glass composition includes glass composition A, glass composition B, glass composition C With glass composition D；In the glass composition, the weight percentage of the glass composition A is 5~20%, described The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 30~70%, The weight percentage of the glass composition D is 1~20%；

The solid-phase component b includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO₂0~ 20%, glass composition 5~30% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 5~ The weight percentage of 20%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 30~70%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Institute It states in solid-phase component b, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂ Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%；

The resistance value is that 1 Ω/ thick-film resistor paste includes at least one of solid-phase component c and solid-phase component d；

The solid-phase component c includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂0~ 20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass composition C With glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, described The weight percentage of glass composition B is 0~30%, and the weight percentage of the glass composition C is 30~70%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component d includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂0~ 20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂'s Weight percentage is 0~2%, ZrSiO₄Weight percentage be 0~13%；

The glass composition A includes the component of following weight percentage: PbO 10~50%, SiO₂35~55%, CaO 5 ~30%, Al₂O₃1~20%, B₂O₃1~10% and ZnO 0~10%, described PbO, SiO₂、CaO、Al₂O₃、B₂O₃And ZnO The sum of weight percentage in glass composition A is at least 95%；

The glass composition B includes the component of following weight percentage: SiO₂40~75%, BaO 0~15%, SrO 0 ~20%, Na₂O 0~10%, K₂O 0~10%, Al₂O₃1~15%, B₂O₃1~25% and ZnO 0~10%, it is described SiO₂、BaO、SrO、Na₂O、K₂O、Al₂O₃、B₂O₃It is at least with the sum of weight percentage of the ZnO in glass composition B 95%；

The glass composition C includes the component of following weight percentage: PbO 50~88%, SiO₂10~30%, Al₂O₃1 ~10%, B₂O₃1~10% and ZnO 0~10%, described PbO, SiO₂、Al₂O₃、B₂O₃With ZnO in glass composition C The sum of weight percentage is at least 95%；

The glass composition D includes the component of following weight percentage: PbO 60~88%, SiO₂10~35%, Al₂O₃1~10%, B₂O₃1~10% and transition metal oxide 0~20%, the transition metal oxide include CuO, MnO₂、Nb₂O₅、Ta₂O₅、TiO₂And ZrO₂At least one of.

2. Standard resistance range as described in claim 1 is 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that in glass In glass composition D, the weight percentage of the transition metal oxide is 0~15%.

3. Standard resistance range as described in claim 1 is 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that described The weight ratio of solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~70:30~50.

4. Standard resistance range as described in claim 1 is 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that described Organic phase constituent includes resin and solvent, and in organic phase constituent, the weight percentage of resin is 0~20%.

5. Standard resistance range as claimed in claim 4 is 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that described Solvent be terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and At least one of dioctyl phthalate.

6. Standard resistance range as claimed in claim 4 is 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that described Resin is at least one of methylcellulose, ethyl cellulose, acrylic resin and epoxy resin.

7. a kind of Standard resistance range as described in any one of claim 1~6 is 0.1 Ω/~1 Ω/ thick-film resistor paste Preparation method, which is characterized in that the Standard resistance range be 0.1 Ω/~1 Ω/ thick-film resistor paste use resistance value for 0.1 Ω/ thick-film resistor paste and resistance value are that 1 Ω/ thick-film resistor paste mixes.

Technical field

The present invention is the divisional application based on " a kind of thick-film resistor paste of CN2017000998988 ", is related to a kind of resistance Slurry, and in particular to a kind of Standard resistance range is 0.1 Ω/~1 Ω/ thick-film resistor paste and preparation method thereof.

Background technique

Raw material of the thick-film resistor paste as production plate resistor, it is desirable that slurry has wider Standard resistance range, can be full 0.1 Ω of foot production~10M Ω resistance value piece resistance demand.Existing resistance slurry is divided by resistance value, and every 1 order of magnitude is one grade, By mixing the adjacent resistance value shelves of different proportion, to obtain target resistance value.

Thick-film resistor paste is in the problem of production process of plate resistor at present:

1) electrical property (EDS, dimensional effect) can deteriorate after certain resistance value shelves mixing, and to meet the performance requirement of piece resistance, The process conditions requirement for mixing the processing of the road Hou Duihou is more harsh, such as at 820~880 DEG C, TCR (the resistance temperature of adjacent resistance value shelves Degree coefficient) it can be maintained at ± 100ppm, and after mixing, TCR can be even up to 400ppm beyond 100ppm under similarity condition；

2) certain adjacent resistance value shelves can not obtain good resistance value curve after directly mixing, so often there is centre Resistance value shelves, this will lead to the increase of cost.

The reason of causing the above problem to occur, is: since there are the difference of the order of magnitude, every liter of resistance values for adjacent resistance value shelves resistance value High an order of magnitude generally can all use following methods: 1, reducing content of the high powder of conductivity in system；2, using electricity The lower conductive phase of conductance or the ratio table for reducing conductive phase；3, in reduction system total conductive phase content, improve amount of glass；4, increase Add the content that the glass of resistance value can be improved in component；Guarantee electrical property, the proportion of conductive phase, glass phase, the ingredient of glass phase It must guarantee in a certain range, and adjacent two grades of conductive phases, glass phases differ greatly, so can band incoming call when mixing The deterioration of performance.

Summary of the invention

It is provided a kind of with good mixed performance it is an object of the invention to overcome the shortcomings of the prior art place Thick-film resistor paste.

To achieve the above object, the technical scheme adopted by the invention is as follows: a kind of thick-film resistor paste, include glass combination Object；

The glass composition includes in glass composition A, glass composition B, glass composition C and glass composition D At least two；

The glass composition A includes the component of following weight percentage: PbO 10~50%, SiO₂35~55%, CaO 5~30%, Al₂O₃1~20%, B₂O₃1~10% and ZnO 0~10%, described PbO, SiO₂、CaO、Al₂O₃、B₂O₃ It is at least 95% with the sum of weight percentage of the ZnO in glass composition A；

The glass composition B includes the component of following weight percentage: SiO₂40~75%, BaO 0~15%, SrO 0~20%, Na₂O 0~10%, K₂O 0~10%, Al₂O₃1~15%, B₂O₃1~25% and ZnO 0~10%, institute State SiO₂、BaO、SrO、Na₂O、K₂O、Al₂O₃、B₂O₃It is at least with the sum of weight percentage of the ZnO in glass composition B 95%；

The glass composition C includes the component of following weight percentage: PbO 50~88%, SiO₂10~30%, Al₂O₃1~10%, B₂O₃1~10% and ZnO 0~10%, described PbO, SiO₂、Al₂O₃、B₂O₃With ZnO in glass composition C In the sum of weight percentage be at least 95%；

The glass composition D includes the component of following weight percentage: PbO 60~88%, SiO₂10~35%, Al₂O₃1~10%, B₂O₃1~10% and transition metal oxide 0~20%, the transition metal oxide include CuO, MnO₂、Nb₂O₅、Ta₂O₅、TiO₂And ZrO₂At least one of.

Good performance can not be obtained when glass composition A is used alone under normal conditions, glass composition need to be cooperated B, at least one of glass composition C could obtain good electrical property and wider array of technique and use window.Glass composition The TCR of the system of the controllable thick-film resistor paste of the addition of D.

Preferably, in glass composition D, the weight percentage of the transition metal oxide is 0~15%, too much It will lead to that form glass unstable, being easy crystallization simultaneously causes resistance endurance quality to decline.

It is 0.1 Ω/~1 Ω/ thick-film resistor paste the present invention also provides a kind of Standard resistance range, the resistance slurry Material is 0.1 Ω/ thick-film resistor paste by resistance value and resistance value is that 1 Ω/ thick-film resistor paste is made；

The resistance value is 0.1 Ω/ thick-film resistor paste and resistance value is that 1 Ω/ thick-film resistor paste includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；

The resistance value be 0.1 Ω/ resistance slurry solid-phase component include solid-phase component a and solid-phase component b in extremely Few one kind；

The solid-phase component a includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO₂ 0 ~20% and glass composition 5~30%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 5~20%, institute The weight percentage for stating glass composition B is 20~50%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；

The solid-phase component b includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO₂ 0 ~20%, glass composition 5~30% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 5~ The weight percentage of 20%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 30~70%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Institute It states in solid-phase component b, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂ Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%；

The resistance value is that 1 Ω/ thick-film resistor paste includes at least one of solid-phase component c and solid-phase component d；

The solid-phase component c includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂ 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；

The solid-phase component d includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂ 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂'s Weight percentage is 0~2%, ZrSiO₄Weight percentage be 0~13%.

It uses above-mentioned 0.1 Ω/ thick-film resistor paste and resistance value is 1 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.

Pass through the glass phase that control 0.1 Ω/ thick-film resistor paste and resistance value are in 1 Ω/ thick-film resistor paste With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 0.1 Ω/~1 Ω/ thick-film resistor paste Method, the Standard resistance range are that 0.1 Ω/~1 Ω/ thick-film resistor paste uses resistance value for 0.1 Ω/ thick-film resistor Slurry and resistance value are that 1 Ω/ thick-film resistor paste mixes.

It is 1 Ω/~10 Ω/ thick-film resistor paste the present invention also provides a kind of Standard resistance range, the resistance slurry Material is 1 Ω/ thick-film resistor paste by resistance value and resistance value is that 10 Ω/ thick-film resistor paste is made；

The resistance value be 1 Ω/ thick-film resistor paste and resistance value be 10 Ω/ thick-film resistor paste include solid phase at Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35~ 75:25~65；

The resistance value is that 1 Ω/ thick-film resistor paste includes at least one of solid-phase component c and solid-phase component d；

The solid-phase component c includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂ 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；

The solid-phase component d includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO₂ 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂'s Weight percentage is 0~2%, ZrSiO₄Weight percentage be 0~13%；

The solid-phase component e includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO₂ 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；

The solid-phase component f includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO₂ 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C It is 20~60%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅'s Weight percentage is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%.

It uses above-mentioned 1 Ω/ thick-film resistor paste and resistance value is that 10 Ω/ thick-film resistor paste is mixed with arbitrary proportion After conjunction, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value shelves Mixed proportion, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce production Manufacturing cost.

By control 1 Ω/ thick-film resistor paste and resistance value be 10 Ω/ thick-film resistor paste in glass phase and The glass phase constituent of conductive phase so that glass phase each component can control in a certain range after mixing, while controlling conductive phase Variation ratio, avoid adjacent two grades of conductive phases biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

It is the preparation method of 1 Ω/~10 Ω/ thick-film resistor paste the present invention also provides above-mentioned Standard resistance range, The Standard resistance range is that 1 Ω/~10 Ω/ thick-film resistor paste uses resistance value for 1 Ω/ thick-film resistor paste and resistance Value is that 10 Ω/ thick-film resistor paste mixes.

It is 10 Ω/~100 Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is 10 Ω/ thick-film resistor paste by resistance value and resistance value is that 100 Ω/ thick-film resistor paste is made；

The resistance value is 10 Ω/ thick-film resistor paste and resistance value is that 100 Ω/ thick-film resistor paste includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；

The resistance value is that 10 Ω/ thick-film resistor paste includes at least one of solid-phase component e and solid-phase component f；

The solid-phase component e includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO₂ 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；

The solid-phase component f includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO₂ 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C It is 20~60%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅'s Weight percentage is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%；

The resistance value is that 100 Ω/ thick-film resistor paste includes at least one of solid-phase component g and solid-phase component h；

The solid-phase component g includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO₂ 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C is 10~ The weight percentage of 40%, the glass composition D are 1~20%；

The solid-phase component h includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO₂ 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂ Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%.

It uses above-mentioned 10 Ω/ thick-film resistor paste and resistance value is 100 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.

Pass through the glass phase that control 10 Ω/ thick-film resistor paste and resistance value are in 100 Ω/ thick-film resistor paste With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 10 Ω/~100 Ω/ thick-film resistor paste Method, the Standard resistance range are that 10 Ω/~100 Ω/ thick-film resistor paste uses resistance value for 10 Ω/ thick-film resistor Slurry and resistance value are that 100 Ω/ thick-film resistor paste mixes.

It is 100 Ω/~1k Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range The thick-film resistor paste that slurry is 100 Ω/ thick-film resistor paste by resistance value and resistance value is 1k Ω/ is made；

The thick-film resistor paste that the resistance value is 100 Ω/ thick-film resistor paste and resistance value is 1k Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；

The resistance value is that 100 Ω/ thick-film resistor paste includes at least one of solid-phase component g and solid-phase component h；

The solid-phase component g includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO₂ 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C is 10~ The weight percentage of 40%, the glass composition D are 1~20%；

The solid-phase component h includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO₂ 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, TiO₂Weight percentage be 0~1%, ZrO₂ Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~13%；

The solid-phase component i includes the component of following weight percentage: RuO₂5~30%, Pb₂Ru₂O₆0~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component j includes the component of following weight percentage: RuO₂5~30%, Pb₂Ru₂O₆0~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C is 15~ 50%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、Ta₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~5%, TiO₂ Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~ 13%.

It uses above-mentioned 100 Ω/ thick-film resistor paste and resistance value is the thick-film resistor paste of 1k Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.

Pass through the glass phase that control 100 Ω/ thick-film resistor paste and resistance value are in the thick-film resistor paste of 1k Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 100 Ω/~1k Ω/ thick-film resistor paste Method, the Standard resistance range are that 100 Ω/~1k Ω/ thick-film resistor paste uses resistance value for 100 Ω/ thick film electricity The thick-film resistor paste that resistance paste and resistance value are 1k Ω/ mixes.

It is 1k Ω/~10k Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 1k Ω/ and resistance value are 10k Ω/；

The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 1k Ω/ are 10k Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；

The thick-film resistor paste that the resistance value is 1k Ω/ includes at least one of solid-phase component i and solid-phase component j；

The solid-phase component i includes the component of following weight percentage: RuO₂5~30%, Pb₂Ru₂O₆0~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component j includes the component of following weight percentage: RuO₂5~30%, Pb₂Ru₂O₆0~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C is 15~ 50%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、Ta₂O₅、SiO₂、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~5%, TiO₂ Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~ 13%；

The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；

The solid-phase component k includes the component of following weight percentage: RuO₂0~20%, Pb₂Ru₂O₆10~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component l includes the component of following weight percentage: RuO₂0~20%, Pb₂Ru₂O₆10~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight percentage be 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~ 5%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage It is 0~13%.

It uses the thick-film resistor paste of above-mentioned 1k Ω/ and resistance value is the thick-film resistor paste of 10k Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.

By controlling thick-film resistor paste and the resistance value of 1k Ω/ as the glass phase in the thick-film resistor paste of 10k Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 1k Ω/~10k Ω/ thick-film resistor paste Method, the Standard resistance range are that 1k Ω/~10k Ω/ thick-film resistor paste uses resistance value for the thick-film resistor of 1k Ω/ The thick-film resistor paste that slurry and resistance value are 10k Ω/ mixes.

It is 10k Ω/~100k Ω/ thick-film resistor paste, the electricity the present invention also provides a kind of Standard resistance range Resistance paste is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 10k Ω/ and resistance value are 100k Ω/；

The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 10k Ω/ are 100k Ω/ includes solid Phase constituent and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent= 35~75:25~65；

The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；

The solid-phase component k includes the component of following weight percentage: RuO₂0~20%, Pb₂Ru₂O₆10~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component l includes the component of following weight percentage: RuO₂0~20%, Pb₂Ru₂O₆10~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight percentage be 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~ 5%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage It is 0~13%；

The resistance value is that the thick-film resistor paste of 100k Ω/ includes at least one in solid-phase component m and solid-phase component n Kind；

The solid-phase component m includes the component of following weight percentage: RuO₂0~10%, Pb₂Ru₂O₆18~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component n includes the component of following weight percentage: RuO₂0~10%, Pb₂Ru₂O₆18~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight percentage be 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~ 5%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage It is 0~13%.

It uses the thick-film resistor paste of above-mentioned 10k Ω/ and resistance value is the thick-film resistor paste of 100k Ω/ arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce Manufacturing cost.

By controlling thick-film resistor paste and the resistance value of 10k Ω/ as the glass in the thick-film resistor paste of 100k Ω/ Mutually with the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the systems that a kind of above-mentioned Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste Preparation Method, the Standard resistance range are that 10k Ω/~100k Ω/ thick-film resistor paste uses resistance value for the thickness of 10k Ω/ The thick-film resistor paste that film resistance slurry and resistance value are 100k Ω/ mixes.

It is 100k Ω/~1M Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 100k Ω/ and resistance value are 1M Ω/；

The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 100k Ω/ are 1M Ω/ includes solid Phase constituent and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent= 35~75:25~65；

The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component m and solid-phase component n；

The solid-phase component m includes the component of following weight percentage: RuO₂0~10%, Pb₂Ru₂O₆18~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component n includes the component of following weight percentage: RuO₂0~10%, Pb₂Ru₂O₆18~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight percentage be 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~ 5%, TiO₂Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage It is 0~13%；

The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；

The solid-phase component o includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆18~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component p includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆18~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~5%, TiO₂ Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~ 13%.

It uses the thick-film resistor paste of above-mentioned 100k Ω/ and resistance value is the thick-film resistor paste of 1M Ω/ arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce Manufacturing cost.

By controlling thick-film resistor paste and the resistance value of 100k Ω/ as the glass in the thick-film resistor paste of 1M Ω/ Mutually with the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the systems that a kind of above-mentioned Standard resistance range is 100k Ω/~1M Ω/ thick-film resistor paste Preparation Method, the Standard resistance range are that 100k Ω/~1M Ω/ thick-film resistor paste uses resistance value for the thickness of 100k Ω/ The thick-film resistor paste that film resistance slurry and resistance value are 1M Ω/ mixes.

It is 1M Ω/~10M Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 1M Ω/ and resistance value are 10M Ω/；

The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 1M Ω/ are 10M Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；

The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；

The solid-phase component o includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆18~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component p includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆18~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~5%, TiO₂ Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~ 13%；

The thick-film resistor paste that the resistance value is 10M Ω/ includes at least one of solid-phase component q and solid-phase component r；

The solid-phase component q includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆10~40% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 40~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；

The solid-phase component r includes the component of following weight percentage: RuO₂0~5%, Pb₂Ru₂O₆10~40%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 40~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO₂、Nb₂O₅、SiO₂、Ta₂O₅、TiO₂、ZrO₂And ZrSiO₄At least one of；In In the solid-phase component r, the weight percentage of CuO is 0~3%, MnO₂Weight percentage be 0~3%, Nb₂O₅Weight Amount percentage composition is 0~3%, SiO₂Weight percentage be 0~2%, Ta₂O₅Weight percentage be 0~5%, TiO₂ Weight percentage be 0~1%, ZrO₂Weight percentage be 0~2%, ZrSiO₄Weight percentage be 0~ 13%.

It uses the thick-film resistor paste of above-mentioned 1M Ω/ and resistance value is the thick-film resistor paste of 10M Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.

By controlling thick-film resistor paste and the resistance value of 1M Ω/ as the glass phase in the thick-film resistor paste of 10M Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.

Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.

Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.

The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.

Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.

The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 1M Ω/~10M Ω/ thick-film resistor paste Method, the Standard resistance range are that 1M Ω/~10M Ω/ thick-film resistor paste uses resistance value for the thick-film resistor of 1M Ω/ The thick-film resistor paste that slurry and resistance value are 10M Ω/ mixes.

The beneficial effects of the present invention are: the present invention provides a kind of thick-film resistor paste, thick-film resistor of the present invention Can by mixing 0.1 Ω/~10M Ω/ within the scope of 0.1 Ω/, 1 Ω/, 10 Ω/, 100 Ω/, 1k Ω/, 10k Ω/, 100k Ω/, the adjacent resistance value shelves of 1M Ω/ and 10M Ω/ nine thick-film resistor paste obtain adjacent resistance value Between any resistance value, adjacent resistance value shelves slurry mixing have good mixed performance, electrical property will not deteriorate after mixing, tool Body is embodied in: (1) resistance obtained after mixing is able to maintain in TCR in ± 100ppm, especially in 820 DEG C~880 DEG C sintering temperature Under degree, still ensure that TCR in ± 100ppm；(2) antistatic property is between two resistance value shelves after mixing, without being more than mixing Two resistance value shelves.The resistance slurry that the resistance slurry of adjacent resistance value shelves is mixed to get with any ratio, low-resistance section (0.1 Ω, 1 Ω, 10 Ω), bullion content is lower than commercial product, but performance is suitable, so at low cost, cost performance with higher, significantly Reduce production cost.

Specific embodiment

To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment to the present invention It is described further.