阅读说明：本技术 具有保护结构的钙钛矿太阳能电池及其制备方法 (Perovskite solar cell with protection structure and preparation method thereof ) 是由 孙魄 于 2021-07-26 设计创作，主要内容包括：本发明公开了具有保护结构的钙钛矿太阳能电池及其制备方法,钙钛矿太阳能电池由防紫外疏水层、FTO、电子传输层、钙钛矿光敏层、空穴传输层和金属电极组成。本发明通过防紫外疏水层、FTO、电子传输层、空穴传输层、钙钛矿光敏层和金属电极的设置,使得钙钛矿太阳能电池相较于传统的钙钛矿太阳能电池能够更好的光电转换,并且能够更好的进行自身保护,使得钙钛矿太阳能电池在使用过程中能够提升抗水解性,延长其使用寿命,解决了传统钙钛矿太阳能电池在长期工作中很容易对电极造成破坏,而且钙钛矿太阳能电池长期暴露于空气中,空气中的水蒸气会使钙钛矿材料水解,因此降低了钙钛矿太阳能电池的稳定性的问题。(The invention discloses a perovskite solar cell with a protection structure and a preparation method thereof. According to the invention, through the arrangement of the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer and the metal electrode, the perovskite solar cell can have better photoelectric conversion compared with the traditional perovskite solar cell, and can be better protected by itself, so that the hydrolysis resistance of the perovskite solar cell can be improved in the use process, the service life of the perovskite solar cell is prolonged, and the problems that the electrode is easily damaged in long-term work of the traditional perovskite solar cell, the perovskite solar cell is exposed in the air for a long time, and the perovskite material can be hydrolyzed by water vapor in the air, so that the stability of the perovskite solar cell is reduced are solved.)

1. Perovskite solar cell with protective structure characterized in that: the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

2. The perovskite solar cell with a protective structure according to claim 1, characterized in that: the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the electron transport layer, the FTO, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

3. The perovskite solar cell with a protective structure according to claim 1, characterized in that: the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the perovskite photosensitive layer, the electron transport layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

4. The perovskite solar cell with a protective structure according to claim 1, characterized in that: the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer and the metal electrode are arranged from top to bottom respectively.

5. The method for producing a perovskite solar cell having a protective structure as claimed in any one of claims 1 to 4, characterized in that: the preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

6. The perovskite solar cell with a protective structure according to claim 1, characterized in that: and in the step B2, the time for removing impurities of the FTO in the deionized water by ultrasonic waves is 15 min.

7. The perovskite solar cell with a protective structure according to claim 1, characterized in that: the heating temperature of the step B3 on the hot table is 450 ℃, and the heating time is 40 min.

8. The perovskite solar cell with a protective structure according to claim 1, characterized in that: the heating temperature of the heating table in the step C1 is 110 ℃, and the heating time is 30 min.

Technical Field

The invention relates to the technical field of perovskite solar cells, in particular to a perovskite solar cell with a protection structure and a preparation method thereof.

Background

The perovskite solar cell (perovskite solar cells) is a solar cell which utilizes perovskite type organic metal halide semiconductors as light absorption materials, belongs to a third generation solar cell, also called a new concept solar cell, and when receiving solar light irradiation, a perovskite layer firstly absorbs photons to generate electron-hole pairs. These carriers either become free carriers or form excitons due to differences in exciton binding energy of the perovskite material. Moreover, since these perovskite materials tend to have a low carrier recombination probability and a high carrier mobility, the diffusion distance and the lifetime of carriers are long, and since perovskite is used as an artificial synthetic material and is tried to be applied to the field of photovoltaic power generation for the first time, the perovskite material is very colorful because of excellent performance, low cost and huge commercial value.

The electrical conversion efficiency of the perovskite solar cell is over 24%, but thermal instability is one of the key factors hindering commercialization, X-site halogen ions in an AB perovskite structure of an active layer of the conventional perovskite solar cell are easy to migrate, and secondly, some transport layer materials have weak acidity and hygroscopicity, so that the electrodes are easy to damage in long-term operation, and the perovskite solar cell is exposed to air for a long time, water vapor in the air can hydrolyze the perovskite materials, so that the stability of the perovskite solar cell is reduced.

Disclosure of Invention

The invention aims to provide a perovskite solar cell with a protection structure and a preparation method thereof, which have the advantages of protection, and solve the problems that X-site halogen ions in an AB perovskite structure of an active layer of the traditional perovskite solar cell are easy to migrate, secondly, some transport layer materials have weak acidity and hygroscopicity, and are easy to damage electrodes in long-term work, and the perovskite solar cell is exposed in the air for a long time, and water vapor in the air can hydrolyze the perovskite materials, so that the stability of the perovskite solar cell is reduced.

In order to achieve the purpose, the invention provides the following technical scheme: the perovskite solar cell with the protection structure comprises an ultraviolet-proof hydrophobic layer, FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

Preferably, the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, an FTO (fluorine doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the electron transport layer, the FTO, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

Preferably, the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, an FTO (fluorine doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the perovskite photosensitive layer, the electron transport layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

Preferably, the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, an FTO (fluorine doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer and the metal electrode are arranged from top to bottom respectively.

Preferably, the preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

Preferably, the time for removing the impurities by ultrasonic waves in the step B2 of immersing the FTO in the deionized water is 15 min.

Preferably, the heating temperature of the step B3 placed on the hot table is 450 ℃, and the heating time is 40 min.

Preferably, the heating temperature of the hot plate in the step C1 is 110 ℃, and the heating time is 30 min.

Compared with the prior art, the invention has the following beneficial effects:

1. the invention arranges the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer and the metal electrode, compared with the traditional perovskite solar cell, the perovskite solar cell can have better photoelectric conversion, and can better perform self protection, so that the hydrolysis resistance of the perovskite solar cell can be improved in the using process, the service life of the perovskite solar cell is prolonged, the problem that X-site halogen ions in an active layer AB perovskite structure of the traditional perovskite solar cell are easy to migrate is solved, secondly, some transmission layer materials have weak acidity and hygroscopicity, and can easily damage electrodes in long-term work, furthermore, the perovskite solar cell is exposed to air for a long time, and water vapor in the air can hydrolyze the perovskite material, thereby reducing the stability of the perovskite solar cell.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The perovskite solar cell with the protection structure comprises an ultraviolet-proof hydrophobic layer, FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

In this embodiment, specifically, the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO, an electron transport layer, a perovskite photosensitive layer, a hole transport layer, and a metal electrode, and the ultraviolet-proof hydrophobic layer, the electron transport layer, the FTO, the perovskite photosensitive layer, the hole transport layer, and the metal electrode are respectively arranged in this order from top to bottom.

In this embodiment, specifically, the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO, an electron transport layer, a perovskite photosensitive layer, a hole transport layer, and a metal electrode, and the ultraviolet-proof hydrophobic layer, the FTO, the perovskite photosensitive layer, the electron transport layer, the hole transport layer, and the metal electrode are respectively arranged in this order from top to bottom.

In this embodiment, specifically, the perovskite solar cell is composed of an ultraviolet-proof hydrophobic layer, an FTO, an electron transport layer, a perovskite photosensitive layer, a hole transport layer, and a metal electrode, and the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer, and the metal electrode are respectively arranged in this order from top to bottom.

In this embodiment, specifically, the preparation method includes the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

In this embodiment, specifically, in step B2, the time for removing impurities by ultrasonic wave after the FTO is immersed in deionized water is 15 min.

In this embodiment, specifically, the heating temperature of the stage B3 is 450 ℃, and the heating time is 40 min.

In this embodiment, specifically, the heating temperature of the hot stage in the step C1 is 110 ℃, and the heating time is 30 min.

Through the anti ultraviolet hydrophobic layer, FTO, the electron transport layer, the hole transport layer, the photosensitive layer of perovskite and metal electrode's setting, make perovskite solar cell compare in traditional perovskite solar cell can better photoelectric conversion, and can be better carry out self protection, make perovskite solar cell can promote the hydrolytic resistance in the use, prolong its life, X position halide ion among the active layer AB perovskite structure of having solved traditional perovskite solar cell takes place the migration very easily, secondly some transport layer materials have faintly acid and hygroscopicity, cause the destruction to the electrode very easily in long-term work, and solar cell exposes in the air for a long time, vapor in the air can make the perovskite material hydrolyze, consequently, the problem of perovskite solar cell's stability has been reduced.

Example two:

in example one, the following additional steps were added:

the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, an FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the electron transport layer, the FTO, the perovskite photosensitive layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

In the step B2, the time for removing impurities from FTO by ultrasonic waves in the deionized water is 15 min.

The heating temperature of the stage B3 on the hot stage was 450 ℃ and the heating time was 40 min.

The heating temperature of the heating stage in the step C1 is 110 ℃, and the heating time is 30 min.

Example three:

in example two, the following additional steps were added:

the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, an FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the perovskite photosensitive layer, the electron transport layer, the hole transport layer and the metal electrode are arranged from top to bottom respectively.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

In the step B2, the time for removing impurities from FTO by ultrasonic waves in the deionized water is 15 min.

The heating temperature of the stage B3 on the hot stage was 450 ℃ and the heating time was 40 min.

The heating temperature of the heating stage in the step C1 is 110 ℃, and the heating time is 30 min.

Example four:

in example three, the following additional steps were added:

the perovskite solar cell comprises an ultraviolet-proof hydrophobic layer, FTO (fluorine-doped tin oxide), an electron transport layer, a perovskite photosensitive layer, a hole transport layer and a metal electrode, wherein the ultraviolet-proof hydrophobic layer, the FTO, the electron transport layer, the hole transport layer, the perovskite photosensitive layer and the metal electrode are arranged from top to bottom respectively.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

In the step B2, the time for removing impurities from FTO by ultrasonic waves in the deionized water is 15 min.

The heating temperature of the stage B3 on the hot stage was 450 ℃ and the heating time was 40 min.

The heating temperature of the heating stage in the step C1 is 110 ℃, and the heating time is 30 min.

Example five:

in example four, the following additional steps were added:

in the step B2, the time for removing impurities from FTO by ultrasonic waves in the deionized water is 15 min.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

Example six:

in example five, the following additional steps were added:

the heating temperature of the heating stage in the step C1 is 110 ℃, and the heating time is 30 min.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

Example seven:

in example six, the following additional steps were added:

the heating temperature of the stage B3 on the hot stage was 450 ℃ and the heating time was 40 min.

The preparation method comprises the following steps:

A. preparing an ultraviolet-proof hydrophobic layer;

a1, firstly, taking a clean FTO, and depositing zinc oxide on the FTO by using a chemical vapor deposition method;

a2, spin-coating a perovskite photosensitive layer on zinc oxide by using a spin-coating method, and depositing an ultraviolet-proof hydrophobic layer on the perovskite photosensitive layer by using a photocuring method;

B. FTO cleaning;

b1, taking 1.5 x 1.5cm FTO, protecting 3/5 part of FTO by a waterproof adhesive tape, and etching 2/5 FTO by using zinc powder and 2mol/L hydrochloric acid;

b2, sequentially cleaning the corroded FTO for six to eight times by using acetone and isopropanol, completely immersing the cleaned FTO into deionized water, and removing impurities by ultrasonic waves;

b3, taking out the FTO immersed in the ionized water to remove impurities, drying in a forced air drying oven, spin-coating the precursor solution of the electron transport layer in a glove box at 4000-6500 rpm, immediately taking out the glove box after the spin-coating, and placing on a hot table to heat;

C. preparing a perovskite photosensitive layer;

c1, continuously spin-coating the perovskite photosensitive layer on the FTO after the electron transport layer is spun at 3000-4500 rpm, then immediately heating under a glove box hot table, and naturally cooling to room temperature after heating;

D. preparation and oxidation of a hole transport layer:

d1, continuously spin-coating the hole transport layer at 4000-6500 rpm in a glove box after finishing the FTO of the perovskite photosensitive layer, then placing the FTO in the glove box for about 8h for curing, then taking out the glove box, and then placing the FTO in a low-humidity drying tower for oxidation for 12 h;

E. evaporating an electrode:

e1, putting the oxidized FTO into an evaporator, and sequentially evaporating 8nm MoO and 100 nmAg.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.