阅读说明：本技术 一种w波段合成功率放大器 (W-band synthesized power amplifier ) 是由 阮晓明 姚武生 陈林 赵超颖 王蕤 于 2021-07-21 设计创作，主要内容包括：本发明公开一种W波段合成功率放大器,包括第一驱动放大器、隔离器、第二驱动放大器、功率监测模块、末级合成放大模组和电源模块；所述第一驱动放大器通过所述隔离器与所述第二驱动放大器连接,所述第二驱动放大器通过所述功率监测模块与所述末级合成放大模组连接,所述电源模块与所述第一驱动放大器、所述第二驱动放大器、所述功率监测模块、所述末级合成放大模组连接；本发明通过第一驱动放大器和第二驱动放大器将微弱的W频段信号放大至较高的水平,通过耦合器监测信号的幅值,最后将放大后的射频信号传输至末级四路合成放大模组进行最终的放大和输出,以增强高频信号且稳定性高,设计简单,值得被推广使用。(The invention discloses a W-band synthesis power amplifier, which comprises a first drive amplifier, an isolator, a second drive amplifier, a power monitoring module, a final-stage synthesis amplification module and a power supply module, wherein the first drive amplifier is connected with the isolator; the first driving amplifier is connected with the second driving amplifier through the isolator, the second driving amplifier is connected with the final-stage synthesis amplification module through the power monitoring module, and the power supply module is connected with the first driving amplifier, the second driving amplifier, the power monitoring module and the final-stage synthesis amplification module; according to the invention, the weak W-band signal is amplified to a higher level through the first driving amplifier and the second driving amplifier, the amplitude of the signal is monitored through the coupler, and finally, the amplified radio-frequency signal is transmitted to the final-stage four-way synthesis amplification module for final amplification and output, so that the high-frequency signal is enhanced, the stability is high, the design is simple, and the high-frequency-band radio-frequency amplifier is worthy of popularization and use.)

1. A W-band synthesis power amplifier is characterized by comprising a first drive amplifier, an isolator, a second drive amplifier, a power monitoring module, a final-stage synthesis amplification module and a power supply module; the first driving amplifier is connected with the second driving amplifier through the isolator, the second driving amplifier is connected with the final-stage synthesis amplification module through the power monitoring module, and the power supply module is connected with the first driving amplifier, the second driving amplifier, the power monitoring module and the final-stage synthesis amplification module.

2. The W-band composite power amplifier according to claim 1, wherein the power monitoring module comprises a coupler, an attenuator and a detector, the coupler is disposed between the second driver amplifier and the final four-way composite amplifying module, the coupler is connected to the detector through the attenuator, the input end of the power monitoring module is the input end of the coupler, and the output end of the power monitoring module is the through end of the coupler.

3. The W-band composite power amplifier of claim 1, wherein the final composite amplifying module comprises an isolated power divider, a plurality of final amplifiers, and an isolated combiner, the isolated power divider being connected through each of the final amplifiers and the isolated combiner, respectively.

4. The W-band composite power amplifier according to claim 1, wherein the first and second driver amplifiers comprise a power supply section and an amplification section, the power supply section comprising a power management chip, a positive voltage DCDC chip, a first positive voltage LDO chip, the amplification section comprising an amplifier chip; a first resistor and a second capacitor are sequentially connected in series between the 17 th pin and the 18 th pin of the power management chip and the drain electrode of the amplifier chip, and the 16 th pin of the power management chip and the gate electrode of the amplifier chip are connected in parallel with the second capacitor; a third capacitor, a parallel first diode, a series first inductor, a parallel second resistor and a parallel fourth capacitor are sequentially connected between the 1 st pin of the positive voltage DCDC chip and the 6 th, 7 th and 8 th pins of the first positive voltage LDO chip in series; and a fifth capacitor, a third resistor and a sixth capacitor are connected in parallel in sequence between the 1 st pin, the 2 nd pin and the 3 rd pin of the first positive-voltage LDO chip and the 5 th pin and the 9 th pin of the power management chip.

5. The W-band composite power amplifier according to claim 1, wherein the final composite amplifier module is provided with a modem circuit, the modem circuit includes an NMOS gate driver chip and an NMOS transistor, a dc current is connected to a1 pin of the NMOS gate driver chip, a LVTTL control level signal provided from the outside is connected to a3 pin of the NMOS gate driver chip, a seventh capacitor is connected in series between a 4 pin and a 6 pin of the NMOS gate driver chip, an eighth capacitor and a second inductor are connected in parallel in sequence between the 4 pin of the NMOS gate driver chip and a 2 pin of the NMOS transistor, and a fourth resistor is connected in series between a 5 pin of the NMOS gate driver chip and a1 pin of the NMOS transistor.

6. The W-band composite power amplifier according to claim 1, wherein the main circuit of the power module comprises a negative voltage DCDC chip, a negative voltage LDO chip, a second positive voltage LDO chip, and a first PMOS transistor, a third inductor and a ninth capacitor are connected in parallel between pins 1 and 2 of the negative voltage DCDC chip and pins 3 of a double-series schottky barrier diode, a fifth resistor and a tenth capacitor are connected in parallel between pins 13 and 15 of the negative voltage LDO chip, a sixth resistor, a seventh resistor and an eleventh capacitor are connected in parallel between pins 9 of the negative voltage DCDC chip and pins 13 and 15 of the negative voltage LDO chip, a twelfth capacitor, a thirteenth capacitor, a first PMOS transistor are connected in parallel between pins 4, 5, and 7 of the negative voltage DCDC chip and pin 1 of the second positive voltage LDO chip, And the eighth resistor and the ninth resistor are connected in parallel in sequence between the 2 pin of the second positive voltage LDO chip and the 2 pin of the first PMOS tube.

7. The W-band composite power amplifier according to claim 6, wherein the pre-stage protection circuit of the power supply module includes a second PMOS transistor and a choke inductor, a sixteenth capacitor and a seventeenth capacitor are connected in parallel between the 2 pin of the second PMOS transistor and the 1 pin of the choke inductor in sequence, and a tenth resistor, an eighteenth capacitor and a nineteenth capacitor are connected in series between the 1 pin of the second PMOS transistor and the 4 pin of the choke inductor in sequence.

8. The W-band composite power amplifier according to claim 1, wherein the first driver amplifier, the isolator, the second driver amplifier, the power monitoring module, and the final four-way composite amplification module are connected in sequence by a rectangular waveguide.

9. The W-band composite power amplifier of claim 1, further comprising a heat dissipation module for dissipating heat, the heat dissipation module being configured with a metal heat sink and a power fan.

10. The W-band composite power amplifier of claim 1, wherein the power amplifier chip of the W-band composite power amplifier is soldered by a high thermal conductivity sintered silver soldering process.

Technical Field

The invention relates to the technical field of power amplifier equipment, in particular to a W-band synthesis power amplifier.

Background

The power amplifier has the main function of amplifying the transmitting excitation signal to rated power for output. Different power amplifiers are also different in internal signal processing, circuit design and production process due to the consideration of power, impedance, distortion, dynamics and different application ranges and control and regulation functions.

The existing W-band power amplifier has the problems of low monolithic output power, poor stability, low efficiency and the like.

In view of the above-mentioned drawbacks, the inventors of the present invention have finally obtained the present invention through a long period of research and practice.

Disclosure of Invention

In order to solve the technical defects, the technical scheme adopted by the invention is to provide a W-band synthesis power amplifier, which comprises a first drive amplifier, an isolator, a second drive amplifier, a power monitoring module, a final-stage synthesis amplification module and a power supply module; the first driving amplifier is connected with the second driving amplifier through the isolator, the second driving amplifier is connected with the final-stage synthesis amplification module through the power monitoring module, and the power supply module is connected with the first driving amplifier, the second driving amplifier, the power monitoring module and the final-stage synthesis amplification module.

Preferably, the power monitoring module includes a coupler, an attenuator and a detector, the coupler is disposed between the second driving amplifier and the final stage four-way synthesis amplifying module, the coupler is connected to the detector through the attenuator, an input end of the power monitoring module is an input end of the coupler, and an output end of the power monitoring module is a through end of the coupler.

Preferably, the final-stage synthesis amplification module includes an isolation power divider, a plurality of final-stage amplifiers, and an isolation synthesizer, and the isolation power divider is connected to the isolation synthesizer through each of the final-stage amplifiers.

Preferably, the first driver amplifier and the second driver amplifier comprise a power supply part and an amplifying part, the power supply part comprises a power management chip, a positive voltage DCDC chip and a first positive voltage LDO chip, and the amplifying part comprises an amplifier chip; a first resistor and a second capacitor are sequentially connected in series between the 17 th pin and the 18 th pin of the power management chip and the drain electrode of the amplifier chip, and the 16 th pin of the power management chip and the gate electrode of the amplifier chip are connected in parallel with the second capacitor; a third capacitor, a parallel first diode, a series first inductor, a parallel second resistor and a parallel fourth capacitor are sequentially connected in series between the 1 st pin of the positive voltage DCDC chip and the 6 th, 7 th and 8 th pins of the first positive voltage LDO chip; and a fifth capacitor, a third resistor and a sixth capacitor are connected in parallel in sequence between the 1 st pin, the 2 nd pin and the 3 rd pin of the first positive-voltage LDO chip and the 5 th pin and the 9 th pin of the power management chip.

Preferably, the final-stage synthesis and amplification module is provided with a modulation and demodulation circuit, the modulation and demodulation circuit includes an NMOS gate driver chip and an NMOS tube, a pin 1 of the NMOS gate driver chip is connected to DC15V, a pin 3 of the NMOS gate driver chip is connected to an LVTTL control level signal provided from the outside, a seventh capacitor is connected in series between a pin 4 and a pin 6 of the NMOS gate driver chip, an eighth capacitor and a second inductor are sequentially connected in parallel between a pin 4 of the NMOS gate driver chip and a pin 2 of the NMOS tube, and a fourth resistor is connected in series between a pin 5 of the NMOS gate driver chip and a pin 1 of the NMOS tube.

Preferably, the main circuit of the power module comprises a negative voltage DCDC chip, a negative voltage LDO chip, a second positive voltage LDO chip, and a first PMOS transistor, a third inductor and a ninth capacitor are connected in parallel between pins 1 and 2 of the negative voltage DCDC chip and pins 3 of a double-series schottky barrier diode, a fifth resistor and a tenth capacitor are connected in parallel between pins 1 of the double-series schottky barrier diode and pins 13 and 15 of the negative voltage LDO chip, a sixth resistor, a seventh resistor and an eleventh capacitor are connected in parallel between pins 9 of the negative voltage DCDC chip and pins 13 and 15 of the negative voltage LDO chip, a twelfth capacitor, a thirteenth capacitor, a fourth inductor, a fourteenth capacitor and a fifteenth capacitor are connected in parallel between pins 4, 5, and 7 of the negative voltage DCDC chip and pin 1 of the second positive voltage LDO chip, and an eighth resistor and a ninth resistor are connected in parallel between the 2 pin of the second positive-voltage LDO chip and the 2 pin of the first PMOS tube in sequence.

Preferably, the preceding stage protection circuit of the power module includes a second PMOS transistor and a choke inductor, a sixteenth capacitor and a seventeenth capacitor are connected in parallel between 2 pins of the second PMOS transistor and 1 pin of the choke inductor in sequence, and a tenth resistor, an eighteenth capacitor and a nineteenth capacitor are connected in series between 1 pin of the second PMOS transistor and 4 pins of the choke inductor in sequence.

Preferably, the first driving amplifier, the isolator, the second driving amplifier, the power monitoring module, and the final stage four-way synthesis amplifying module are sequentially connected through a rectangular waveguide.

Preferably, the power amplifier chip of the W-band synthesized power amplifier is welded by a high-thermal-conductivity sintered silver welding process.

Preferably, the W-band composite power amplifier further includes a heat dissipation module for dissipating heat, and the heat dissipation module is a configured metal heat sink and a powerful fan.

Compared with the prior art, the invention has the beneficial effects that: the weak W-band signal is amplified to a higher level through the first driving amplifier and the second driving amplifier, the amplitude of the signal is monitored through the coupler, and finally the amplified radio-frequency signal is transmitted to the final-stage four-path synthesis amplification module for final amplification and output; the waveguide power divider and the synthesizer adopted by the final-stage four-path synthesis amplifying module have the characteristics of high isolation and low loss, the high isolation can reduce the interference between channels, namely, after an individual power amplifier chip is damaged, the whole power amplifier assembly still has certain power output capacity, and the low loss can ensure that the synthesis structure has more than 90% of synthesis efficiency; the welding of the power amplifier chip adopts a high-thermal-conductivity silver sintering process to replace the existing eutectic process, so that the welding thermal resistance and the junction temperature of the power amplifier chip are obviously reduced, the working stability of the power amplifier chip is improved, and the electrical property of the power amplifier is improved. The first driving amplifier, the microwave switch module, the second driving amplifier, the power monitoring module and the final-stage four-path synthesis amplification module are sequentially connected, high-frequency signals can be enhanced, stability is high, design is simple, and the microwave power amplifier is worthy of being popularized and used.

Drawings

FIG. 1 is a schematic diagram of a radio frequency circuit of the W-band composite power amplifier;

FIG. 2 is a feed circuit diagram of the first driver amplifier;

FIG. 3 is a feed circuit diagram of the final amplifier;

FIG. 4 is a main circuit diagram of the power module;

fig. 5 is a diagram of a preceding stage protection circuit in the power module.

The figures in the drawings represent:

1-a first driver amplifier; 2-an isolator; 3-a second driver amplifier; 4-a power monitoring module; 5-a final stage four-way synthesis amplification module; a 6-coupler; 7-high isolation four-way power divider; 8-a final amplifier; 9-high isolation four-way synthesizer; 10-an attenuator; 11-a detector; 12-power supply module.

Detailed Description

The above and further features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.

Example one

The W-band synthesis power amplifier comprises a first driving amplifier 1, an isolator 2, a second driving amplifier 3, a power monitoring module 4, a final-stage four-path synthesis amplification module 5 and a power supply module 12. The first driving amplifier 1 is connected with the second driving amplifier 3 through the isolator 2, the second driving amplifier 3 is connected with the final stage four-way synthesis amplification module 5 through the power monitoring module 4, and the power supply module 12 is connected with the first driving amplifier 1, the second driving amplifier 3, the power monitoring module 4 and the final stage four-way synthesis amplification module 5.

The first driving amplifier 1 is used for receiving and amplifying high-frequency weak signals with high gain, the second driving amplifier 3 is used for further amplifying the high-frequency signals to a required level, and the isolator 2 is used for isolating energy reflection caused by mismatch and improving the working stability of the system.

Preferably, the first driving amplifier 1, the isolator 2, the second driving amplifier 3, the power monitoring module 4, and the final stage four-way synthesis amplifying module 5 are connected in sequence through a standard rectangular waveguide WR-10.

Preferably, the maximum output power of the W-band composite power amplifier is not less than 6W.

Preferably, the W-band composite power amplifier further includes a heat dissipation module for dissipating heat, and the heat dissipation module is a configured metal heat sink and 4 powerful fans.

All power amplifier chips of the W-band synthesized power amplifier are welded by bare chips, a 2-level filter capacitor with a low capacitance value at the near end needs to adopt a chip capacitor which is also exposed and packaged, the chip capacitor is used for isolating the interference of a direct current power supply to a radio frequency path, and the radio frequency path of the chip and a microstrip and the feed path of the chip and the chip capacitor both adopt a connection mode of gold wire bonding.

All power amplifier chips of the W-band composite power amplifier are welded by a high-thermal-conductivity silver sintering welding process, the thermal conductivity of the silver sintering welding can reach more than 200W/(m.K), the thermal conductivity of common eutectic welding is only about 50W/(m.K), and the thermal conductivity of the silver sintering welding is 4 times that of the eutectic welding. Therefore, the welding of the W-band power amplifier chip with high heat consumption and low efficiency by adopting the silver sintering process can obviously reduce the welding thermal resistance and the junction temperature and thermal resistance of the power amplifier chip and improve the working stability of the power amplifier chip, thereby improving the electrical performance of the power amplifier.

The power divider and the synthesizer adopted by the final-stage four-path synthesis amplification module 5 have the characteristic of high isolation, and the isolation degree of adjacent channels is greater than 17 dB. The power divider and the synthesizer adopt the technology of multi-slot coupling of metal waveguides, embedding of porous SiC absorbers and perturbation of rectangular cavity shapes, and the goals of small volume, high isolation, good matching and the like are achieved.

Example two

The power monitoring module 4 comprises a coupler 6, an attenuator 10 and a detector 11, wherein the coupler 6 is arranged between the second driving amplifier 3 and the final-stage four-path synthesis amplification module 5, and the coupler 6 is connected with the detector 11 through the attenuator 10. The coupling end of the coupler 6 is connected with the attenuator 10, the attenuator 10 is connected with the input end of the detector 11, the attenuator 10 can prevent the excessive power entering the detector 11 and protect the detector 11, and the output signal of the detector 11 is used for monitoring whether the output power of the second driving amplifier 3 is normal or not; the input end of the power monitoring module 4 is the input end of the coupler 6, and the output end of the power monitoring module 4 is the through end of the coupler 6.

The coupler 6 is used for extracting a small part of energy in a radio frequency channel, and sending the energy to the detector 11 after being further attenuated by the attenuator 10, so as to monitor whether the output power of the second driving amplifier 3 is normal or not.

The final stage four-way synthesis and amplification module 5 comprises a high isolation four-way power divider 7, four final stage amplifiers 8 and a high isolation four-way synthesizer 9, wherein the high isolation four-way power divider 7 is respectively connected with the high isolation four-way synthesizer 9 through each final stage amplifier 8. The final stage four-way synthesis and amplification module 5 is mainly used for performing final amplification and output on radio frequency signals.

Specifically, the final stage four-way synthesis amplification module 5 includes four two-way synthesis modules, a high isolation four-way waveguide power divider, and a high isolation four-way waveguide synthesizer, where four input ends of the two-way synthesis modules are connected to an output end of the high isolation four-way waveguide power divider, and four output ends of the two-way synthesis modules are connected to an input end of the high isolation four-way waveguide synthesizer. The high-isolation four-way waveguide power divider, the two-way synthesis module and the high-isolation four-way waveguide synthesizer are sequentially connected from left to right.

The power supply module 12 is used for providing required direct current bias for each stage of power amplification module and providing power-on and power-off time sequence protection for an expensive final stage power amplification chip; the whole W-band synthesis power amplifier can enhance high-frequency signals and is high in stability and simple in design.

The power module 12 provides voltage stabilization protection and reverse connection prevention functions for the external input DC16V, and the choke inductor Q10 can isolate interference between an external power supply and signals inside the power amplifier. The external input DC16V is divided into three paths after passing through the front stage protection circuit of the power module 12, one path reaches the first driver amplifier, the other path reaches the second driver amplifier, and the last path reaches the main circuit of the power module, so as to provide the required DC bias and the power-on and power-off timing protection functions of the power chip (gate voltage first and then leakage voltage when power is on, and leakage voltage first and then gate voltage when power is off) for the power chip of the final stage four-path synthesis amplification module.

The specific model of the amplifier chip U1 used by the first driver amplifier 1 is WFDN920960-P23, the specific model of the chips used by the second driver amplifier 3 and the final stage four-way synthesis amplification module 5 is WFDN920960-P33-2, the specific model of the chip R1 used by the attenuator 10 is MWA100-6dB, and the specific model of the chip T1 used by the detector 11 is TCC 1904J.

As shown in fig. 1, fig. 1 is a schematic diagram of a radio frequency circuit of the W-band composite power amplifier; the first driving amplifier 1, the isolator 2, the second driving amplifier 3, the power monitoring module 4 and the final stage four-way synthesis amplification module 5 are sequentially connected from left to right, and the power monitoring module 4 monitors the output power of the second driving amplifier 3. The first driving amplifier 1, the second driving amplifier 3 and the final stage four-way synthesis amplification module 5 are adopted to amplify and output a W frequency band signal, and the power supply module 12 provides a direct current bias voltage for the first driving amplifier 1, the second driving amplifier 3 and the final stage four-way synthesis amplification module 5.

The isolator 2 is connected between the first driving amplifier 1 and the second driving amplifier 3, and the isolator 2 can improve standing waves, reduce the influence of reflected signals and improve the working stability of a radio frequency link.

As shown in fig. 2, fig. 2 is a feed circuit diagram of the first driver amplifier.

The first driver amplifier 1 and the second driver amplifier 3 include a power supply section including a power management chip Q1, a positive voltage DCDC chip Q3, a positive voltage LDO chip Q2, and an amplification section including an amplifier chip U1 or U2; specifically, the first driving amplification module comprises an amplifier chip U1, a power management chip Q1, a positive voltage LDO chip Q2 and a positive voltage DCDC chip Q3. The second driving amplification module comprises an amplifier chip U2, a power management chip Q1, a positive voltage LDO chip Q2 and a positive voltage DCDC chip Q3.

A resistor R7 and a parallel capacitor C2 are sequentially connected in series between the 17 th pin and the 18 th pin of the power management chip Q1 and the drain electrode of the amplifier chip U1 or U2, and the 16 th pin of the power management chip Q1 and the gate parallel capacitor C5 of the amplifier chip U1 or U2; a capacitor C14, a parallel diode D2, a series inductor L2, a parallel resistor R17 and a parallel capacitor C17 are sequentially connected between the 1 st pin of the positive voltage DCDC chip Q3 and the 6 th, 7 th and 8 th pins of the positive voltage LDO chip Q2; a capacitor C13, a parallel resistor R18 and a parallel capacitor C15 are connected in parallel between the 1 st pin, the 2 nd pin and the 3 rd pin of the positive voltage LDO chip Q2 and the 5 th pin and the 9 th pin of the power management chip Q1 in sequence.

The power supply parts of the first driver amplifier 1 and the second driver amplifier 3 are integrated inside the respective amplifier modules, respectively.

The specific model of the power management chip Q1 is HMC980LP4E, the specific model of the positive voltage DCDC chip Q2 is LM2841-Q1, and the specific model of the positive voltage LDO chip Q3 is ADP 3336.

As shown in fig. 3, fig. 3 is a feed circuit diagram of the final amplifier;

the final-stage four-way synthesis amplification module 5 is provided with a modulation and demodulation circuit, the modulation and demodulation circuit comprises an NMOS gate drive chip Q8 and an NMOS tube Q9, a1 pin of the NMOS gate drive chip Q8 is connected with DC15V, a3 pin of the NMOS gate drive chip Q8 is connected with an LVTTL control level signal provided by the outside, a capacitor C33 is connected between a 4 pin and a 6 pin of the NMOS gate drive chip Q8 in series, a capacitor C33 and a parallel inductor L33 are connected between the 4 pin of the NMOS gate drive chip Q8 and a 2 pin of the NMOS tube Q9 in parallel in sequence, and a resistor R31 is connected between a 5 pin of the NMOS gate drive chip Q8 and the 1 pin of the NMOS tube Q9 in series.

The specific model of the NMOS gate driving chip Q8 is LTC4440, and the specific model of the NMOS transistor is IRFS 3107.

As shown in fig. 4, fig. 4 is a main circuit diagram of the power module.

The main circuit of the power module 12 includes a negative voltage DCDC chip Q4, a negative voltage LDO chip Q5, a positive voltage LDO chip Q6, and a PMOS transistor Q7, wherein an inductor L41, a series capacitor C41, a resistor R41, a parallel capacitor C42 are sequentially connected in parallel between pins 1 and 2 of the negative voltage DCDC chip Q4 and pin 3 of a double-series schottky barrier diode D41, a resistor R44, a resistor C42, a parallel capacitor C42 are sequentially connected in parallel between pin 1 of the negative voltage DCDC chip Q4 and pins 13 and 15 of the negative voltage LDO chip Q5, a capacitor C48, a parallel capacitor C2, a series capacitor L42, a parallel capacitor C411, a parallel capacitor C412 are sequentially connected in parallel between pins 4, 5, and 7 of the negative voltage DCDC chip Q4 and pin 1 of the positive voltage LDO chip Q6, a capacitor C48, a parallel capacitor C42, a parallel capacitor C411, a parallel capacitor C412, a positive voltage LDO Q6, and a PMOS transistor Q862 are sequentially connected in parallel between pins 2 and pin 2 of the negative voltage LDO chip Q8427, A parallel resistor R410.

The specific model of the negative-pressure DCDC chip Q4 is LT3479EDE, the specific model of the negative-pressure LDO chip Q5 is TPS7A33, the specific model of the positive-pressure LDO chip Q6 is LT1083, and the specific model of the PMOS tube Q7 is IRFR 5305.

As shown in fig. 5, the pre-stage protection circuit of the power module 12 includes a PMOS transistor Q11 and a choke inductor Q10, a capacitor C51 and a capacitor C52 are sequentially connected in parallel between the 2 pin of the PMOS transistor Q11 and the 1 pin of the choke inductor Q10, and a resistor R51, a parallel capacitor C51 and a capacitor C52 are sequentially connected in series between the 1 pin of the PMOS transistor Q11 and the 4 pin of the choke inductor Q10.

The specific model of the PMOS tube Q7 is IRFR5305, and the specific model of the choke inductor Q10 is BNX027H 01.

The W-band composite power amplifier of the present embodiment has the following functions on the basis of amplifying the transmission excitation signal to a rated power output:

the power monitoring function: the power monitoring module 4 is used for monitoring the power input into the final-stage four-way synthesis amplification module 5, when a radio-frequency signal output by the second driving amplifier enters the final-stage four-way synthesis amplification module 5, a very small part of energy is separated through a coupling port of the coupler 6 and enters the attenuator 10, the energy is attenuated by 6dB and enters the detector 11, the output voltage of the detector can be observed in real time through an oscilloscope, and when the output voltage of the detector is more than or equal to 10V, the power is normal; when the output voltage of the detector is less than 10V, the power is abnormal. Thereby realizing the monitoring of the output power of the second drive amplifier.

The main technical indicators of the W-band combined power amplifier of the present embodiment are as follows:

power amplifier form: solid-state power amplification;

the working state is as follows: pulsed or continuous wave;

power amplifier frequency: w band (94 + -1 GHz);

maximum output power: not less than 6W;

efficiency: more than or equal to 10 percent;

power gain: not less than 30 dB;

rising edge: less than or equal to 200 ns;

falling edge: less than or equal to 300 ns;

pulse width: 0.2 s-continuous wave (radio frequency);

pulse top reduction: less than or equal to 10 percent;

flatness of in-band output power: less than or equal to 0.5 dB;

inputting standing-wave ratio: less than or equal to 1.5;

outputting standing-wave ratio: less than or equal to 2.0;

and (3) detection output: the voltage is more than or equal to 10V.

The radio frequency input/output interface and the ports of each stage of radio frequency modules of the W-band composite power amplifier of the embodiment are standard rectangular waveguide ports (WR-10);

the power supply of the W-band combined power amplifier of the embodiment adopts DC16V for power supply;

the W-band synthesized power amplifier of the embodiment adopts 4 12-watt fans to perform forced air cooling under the condition of ensuring the effective heat dissipation area so as to meet the heat dissipation requirement.

In summary, in the W-band composite power amplifier, a weak W-band signal is amplified to a higher level by the first driver amplifier and the second driver amplifier, the amplitude of the output signal of the second driver amplifier is monitored by the power monitoring module, and finally, the amplified radio frequency signal is transmitted to the power amplifier final stage four-way composite amplification module for final amplification and output; the first driving amplifier, the isolator, the second driving amplifier, the power monitoring module and the final-stage four-path synthesis amplification module are sequentially connected from left to right, high-frequency signals can be enhanced, stability is high, design is simple, and the device is worthy of being popularized and used.

The foregoing is merely a preferred embodiment of the invention, which is intended to be illustrative and not limiting. It will be understood by those skilled in the art that various changes, modifications and equivalents may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.