Graphene heating wafer coating and packaging process

文档序号:1850187 发布日期:2021-11-16 浏览:24次 中文

阅读说明:本技术 一种石墨烯发热晶片包覆封装工艺 (Graphene heating wafer coating and packaging process ) 是由 庄狄烽 于 2021-08-13 设计创作,主要内容包括:本发明公开了一种石墨烯发热晶片包覆封装工艺,包括如下步骤:1)成管:将金属线打盲孔,形成金属管;金属管的壁厚控制在0.2至0.3mm,金属管的盲孔孔径为0.5至1.5L,其中,L为石墨烯发热晶片的宽度;2)第一次扁压:将金属管进行扁压,形成扁平状的金属套,金属套的套孔的厚度为1.1至1.5H,宽度大于L,其中,H为石墨烯发热晶片的厚度;3)前端打尖:将金属套的端部进行打尖处理,形成前端为尖端的扁平状的金属套;4)嵌片:将石墨烯发热晶片的主体部插入扁平状金属套的套孔中;5)第二次扁压:将插入石墨烯发热晶片的扁平状金属套进行第二次扁压,以使得金属套的套孔的厚度达到H±0.02mm,从而使得金属套的套孔的内侧面与石墨烯发热晶片进行紧密贴合。(The invention discloses a graphene heating wafer coating and packaging process, which comprises the following steps: 1) tube forming: drilling blind holes on the metal wire to form a metal tube; the wall thickness of the metal tube is controlled to be 0.2-0.3 mm, the aperture of a blind hole of the metal tube is 0.5-1.5L, wherein L is the width of the graphene heating wafer; 2) first flattening: flattening the metal tube to form a flat metal sleeve, wherein the thickness of a sleeve hole of the metal sleeve is 1.1-1.5H, and the width of the sleeve hole is greater than L, wherein H is the thickness of the graphene heating wafer; 3) front end pointing: the end part of the metal sleeve is sharpened to form a flat metal sleeve with the pointed front end; 4) embedding sheets: inserting the main body part of the graphene heating wafer into a sleeve hole of a flat metal sleeve; 5) second flattening: and flattening the flat metal sleeve inserted into the graphene heating wafer for the second time to enable the thickness of the trepanning of the metal sleeve to reach H +/-0.02 mm, and enabling the inner side surface of the trepanning of the metal sleeve to be tightly attached to the graphene heating wafer.)

1. A graphene heating wafer coating packaging process is characterized in that: the method comprises the following steps:

1) tube forming: drilling blind holes on the metal wire to form a metal tube; the wall thickness of the metal tube is controlled to be 0.2-0.3 mm, the aperture of a blind hole of the metal tube is 0.5-1.5L, and L is the width of the graphene heating wafer;

2) first flattening: flattening the metal tube formed in the step 1) to form a flat metal sleeve, wherein the thickness of a sleeve hole of the metal sleeve is 1.1-1.5H, and the width of the sleeve hole is larger than L, wherein H is the thickness of the graphene heating wafer;

3) front end pointing: sharpening the end part of the metal sleeve formed in the step 2) to form a flat metal sleeve with a pointed front end;

4) embedding sheets: inserting the main body part of the graphene heating wafer into the trepanning of the flat metal sleeve in the step 3);

5) second flattening: and 4) carrying out secondary thickness limiting and flattening on the flat metal sleeve inserted with the graphene heating wafer in the step 4) so as to enable the thickness of the trepanning of the metal sleeve to reach H +/-0.02 mm, and enabling the inner side surface of the trepanning of the metal sleeve to be tightly attached to the graphene heating wafer.

2. The graphene heat-generating wafer encapsulation process according to claim 1, wherein: in the step 1), the metal wire is a copper wire or an aluminum wire.

3. The graphene heat-generating wafer encapsulation process according to claim 1, wherein: in the step 1), the front end part of the metal pipe is conical.

4. The graphene heat-generating wafer encapsulation process according to claim 1, wherein: the width L of the graphene heating wafer is 2.5-4 mm, and the thickness H is 0.2-1 mm.

5. The graphene heat-generating wafer encapsulation process according to claim 1, wherein: in the step 5), the set thickness is 2 × the thickness of the metal sleeve plus the thickness H of the graphene heating wafer plus +/-0.02 mm.

Technical Field

The invention relates to a packaging process, in particular to a graphene heating wafer coating packaging process.

Background

The graphene heating wafer is conductive and heating, can be used as a heating sheet of an electronic cigarette, and has better advantages than the traditional metal heating. The traditional metal sheet generates heat and needs about 25 watts, and the graphene heating chip can generate heat only by about 5 watts. However, when the graphene heat-generating chip is applied, it needs to be encapsulated by metal. Graphite alkene wafer that generates heat itself is rectangular slice, and is comparatively fragile, and one end is provided with two wiring feet, and the surface coating of main part has heat conduction high temperature resistant insulating layer. In the process of encapsulating with metal, it is necessary to consider the problems of protection of the graphene heat generating wafer, contact with the graphene heat generating wafer, sharpness of the tip portion, and the like.

Disclosure of Invention

In view of the above disadvantages, an object of the present invention is to provide a graphene heating chip encapsulation process, which realizes high-efficiency encapsulation of a graphene heating chip by tube formation, first flattening, tip pointing at an end, sheet embedding, second flattening, and other processes, and simultaneously avoids damage to the graphene heating chip, thereby ensuring tight contact between a metal sleeve and the graphene heating chip and ensuring encapsulation quality.

The technical scheme adopted by the invention is as follows: a graphene heating wafer coating packaging process is characterized in that: the method comprises the following steps:

1) tube forming: drilling blind holes on the metal wire to form a metal tube; the wall thickness of the metal tube is controlled to be 0.2-0.3 mm, the aperture of a blind hole of the metal tube is 0.5-1.5L (preferably 0.8-1L), and L is the width of the graphene heating wafer;

2) first flattening: flattening the metal tube formed in the step 1) to form a flat metal sleeve, wherein the thickness of a sleeve hole of the metal sleeve is 1.1-1.5H, and the width of the sleeve hole is larger than L, wherein H is the thickness of the graphene heating wafer;

3) front end pointing: sharpening the end part of the metal sleeve formed in the step 2) to form a flat metal sleeve with a pointed front end;

4) embedding sheets: inserting the main body part of the graphene heating wafer into the trepanning of the flat metal sleeve in the step 3);

5) second flattening: and 4) carrying out secondary thickness limiting and flattening on the flat metal sleeve inserted with the graphene heating wafer in the step 4) so as to enable the thickness of the trepanning of the metal sleeve to reach H +/-0.02 mm, and enabling the inner side surface of the trepanning of the metal sleeve to be tightly attached to the graphene heating wafer.

Further, in the step 1), the metal wire is a copper wire or an aluminum wire.

Further, in step 1), the front end portion of the metal pipe is conical.

Further, the width L of the graphene heating wafer is 2.5-4 mm, and the thickness H is 0.2-1 mm.

Further, in the step 5), the thickness is set to be 2 × the thickness of the metal sleeve plus the thickness H of the graphene heating wafer plus +/-0.02 mm

The invention has the following advantages: through the procedures of tube forming, first flat pressing, tip sharpening (namely tip sharpening), sheet embedding, second flat pressing and the like, the graphene heating wafer is prevented from being damaged while being efficiently coated and packaged, and the coating and packaging quality is guaranteed. Its core lies in secondary flat pressing and tip, mutually supporting of inserted sheet step, once flattens in advance and can be convenient for sharpen the operation, and the graphite alkene of being convenient for generates heat the inserting and the location of wafer, then limits the flat pressing of thickness (use precision machine equipment to carry out flat pressing work again to control restriction flat degree of pressing), guarantees the graphite alkene and generates heat the fine and close contact nature of wafer in the trepanning, can not cause the damage to graphite alkene heating wafer moreover.

The present invention will be further described with reference to the following description and embodiments in conjunction with the accompanying drawings.

Drawings

Fig. 1 is a schematic structural diagram of a graphene heating wafer;

FIG. 2 is a schematic structural view of a metal tube;

FIG. 3 is a schematic structural view of a metal sleeve formed after a metal tube is first flattened and sharpened;

fig. 4 is a schematic structural view of the graphene heating chip after being inserted and encapsulated by second flat pressing;

in the figure: a graphene heat-generating wafer 1; a wiring pin 11; a metal tube 2; a metal sheath 3; a trepan 31; and a tip part 32 is formed.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that if directional indications (such as … …, which is up, down, left, right, front, back, top, bottom, inner, outer, vertical, transverse, longitudinal, counterclockwise, clockwise, circumferential, radial, axial) are provided in the embodiments of the present invention, the directional indications are only used for explaining the relative position relationship, motion condition, etc. of the components at a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indications are changed accordingly.

In addition, if there is a description relating to "first" or "second", etc. in the embodiments of the present invention, the description of "first" or "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

Referring to fig. 1 to 4, in the graphene heating chip encapsulation packaging process provided in this embodiment, the width L of the graphene heating chip 1 is 2.5 to 4mm, and the thickness H is 0.2 to 1 mm; it includes graphite alkene heating chip main part and wiring foot 11. Take the example of a width of 3mm, then 0.3 mm.

The process comprises the following steps:

1) tube forming: blind-hole drilling is carried out on the metal wire to form a metal pipe 2 (the metal pipe is made of copper or aluminum, preferably copper); the wall thickness of the metal tube 2 is controlled to be 0.2-0.3 mm, the aperture of a blind hole 21 of the metal tube 2 is 2.5mm, and the front end of the metal tube is conical. The blind hole can be drilled by the existing drilling equipment, which is not described herein.

2) First flattening: flattening the metal pipe formed in the step 1) to form a flat metal sleeve 3, wherein the thickness of a sleeve hole 31 of the metal sleeve 3 is 0.4mm, and the width of the sleeve hole is more than 3 mm. The pre-flattening can facilitate the sharpening operation and the subsequent insertion and positioning of the graphene heating wafer.

3) Front end pointing: the end of the metal jacket 3 formed in step 2) is sharpened to form a flat metal jacket 3 having a pointed end (pointed portion 32). The pointing process may be performed by punching, blanking, and pointing with a die to form a triangular tip.

4) Embedding sheets: inserting the main body part of the graphene heat-generating wafer 1 into the sleeve hole 31 of the flat metal sleeve 3 in the step 3). The inserting piece is arranged after the sharpening, so that the damage of the graphene heating wafer can be avoided. And after the first pre-flattening, the graphene heating wafer can be pre-positioned.

5) Second flattening: carrying out secondary thickness limiting and flattening on the flat metal sleeve inserted with the graphene heating wafer 1 in the step 4) (setting the flattening thickness which cannot exceed or be less than the preset flattening thickness, so as to ensure the close contact between the metal sleeve and the graphene heating wafer and avoid damaging the graphene heating wafer, especially an insulating layer on the surface of the graphene heating wafer; for example, the thickness is set to be 2 × the thickness of the metal sleeve (because the metal sleeve has two upper and lower wall thicknesses) plus the thickness H of the graphene heating wafer, and plus or minus 0.02 mm; certainly, in the middle of the actual production manufacturing, can carry out corresponding fine setting according to the precision of equipment and mould to the thickness that makes the trepanning of metal covering 3 reaches H0.02 mm, thereby makes the medial surface and the graphite alkene wafer that generates heat of trepanning of metal covering closely laminate.

Through the procedures of tube forming, first flat pressing, tip punching of the end part, sheet embedding, second flat pressing and the like, the graphene heating wafer is prevented from being damaged while being efficiently coated and packaged, and the coating and packaging quality is guaranteed. Its core lies in secondary flat pressing and tip, the mutually supporting of inserted sheet step, once flattens in advance and can be convenient for sharpen the operation, and the graphite alkene of being convenient for generates heat the inserting and the location of wafer, then limits the flat pressing of thickness again, guarantees the graphite alkene and generates heat the fine and close contact nature of wafer in the trepanning, can not cause the damage to graphite alkene moreover and generate heat the wafer.

The present invention is not limited to the above embodiments, and other graphene heating wafer encapsulation processes obtained by using the same or similar technical features as those of the above embodiments of the present invention are within the protection scope of the present invention.

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