阅读说明：本技术 一种耐高温的柔性磁电传感器及其制备方法 (High-temperature-resistant flexible magnetoelectric sensor and preparation method thereof ) 是由 曹博 汪尧进 袁国亮 于 2020-04-30 设计创作，主要内容包括：本发明涉及一种耐高温的柔性磁电传感器及其制备方法。所述耐高温的柔性磁电传感器包括磁致伸缩材料层,压电材料层,其中磁致伸缩材料层是Terfenol-D单晶薄片,压电材料层是BiScO-(3)-PbTiO-(3)压电陶瓷薄片。磁致伸缩材料层与压电材料层之间使用高温银胶粘结,从而得到耐高温的柔性磁电传感器。本发明所制备的磁电传感器具有高灵敏度、小型化、柔性、高温工作、功耗低、成本低的突出综合性能优势,在国防安全、智能交通、先进制造等涉及高温的领域具有广泛的应用前景。(The invention relates to a high-temperature-resistant flexible magnetoelectric sensor and a preparation method thereof. The high-temperature-resistant flexible magnetoelectric sensor comprises a magnetostrictive material layer and a piezoelectric material layer, wherein the magnetostrictive material layer is a Terfenol-D single crystal sheet, and the piezoelectric material layer is BiScO 3 ‑PbTiO 3 A piezoelectric ceramic wafer. And the magnetostrictive material layer and the piezoelectric material layer are bonded by using high-temperature silver adhesive, so that the high-temperature-resistant flexible magnetoelectric sensor is obtained. The magnetoelectric sensor prepared by the invention has the outstanding comprehensive advantages of high sensitivity, miniaturization, flexibility, high-temperature work, low power consumption and low costThe performance advantage has wide application prospect in the fields of national defense safety, intelligent transportation, advanced manufacturing and the like, which relate to high temperature.)

1. The high-temperature-resistant flexible magnetoelectric sensor is characterized by comprising a magnetostrictive material layer Terfenol-D monocrystal and a piezoelectric material layer BiScO₃-PbTiO₃The piezoelectric ceramic is a magnetoelectric composite structure formed by bonding high-temperature silver colloid.

2. The sensor according to claim 1, wherein the high temperature resistant flexible magnetoelectric sensor has a length to width ratio of 5: 1; the thickness ratio of the magnetostrictive material layer to the piezoelectric material layer in the high-temperature-resistant flexible magnetoelectric sensor is 2:1 to 3:1, and the total thickness is 0.3 mm to 0.5 mm.

3. The sensor of claim 1, wherein the maximum thickness of the high temperature silver paste between the layer of magnetostrictive material and the layer of piezoelectric material is 10 microns.

4. The sensor according to claim 1, characterized in that the bending diameter of the high temperature resistant flexible magnetoelectric sensor with a thickness of 0.51 mm is 10.7 mm.

5. The sensor of claim 1, prepared by the steps of:

(1) respectively melting and solidifying BiScO by adopting paraffin₃-PbTiO₃Fixing the piezoelectric ceramics and the Terfenol-D single crystal on a polished glass substrate, and mechanically thinning and polishing the BiScO₃-PbTiO₃Thinning piezoelectric ceramic and Terfenol-D single crystal, BiScO₃-PbTiO₃Piezoelectric ceramic and Terfenol-D single crystal surface roughnessThe degree is 10 to 100 nanometers;

(2) after mechanical thinning, the BiScO is subjected to silk-screen printing₃-PbTiO₃Preparing a metal Ag electrode on one surface of the piezoelectric ceramic;

(3) on dry oil-free filter paper, a magnetostrictive material layer Terfenol-D single crystal and a piezoelectric material layer BiScO₃-PbTiO₃The surface of the piezoelectric ceramic on which the metal Ag electrode does not grow is subjected to interlayer bonding by using high-temperature silver adhesive, and then the redundant high-temperature silver adhesive extruded out around the magnetoelectric composite structure is removed by using a soft scraper;

(4) placing the bonded magnetoelectric composite structure into a vacuum bag, and vacuumizing by using a vacuum compressor to preliminarily bond the magnetostrictive material layer and the piezoelectric material layer;

(5) taking out the vacuumized magnetoelectric composite structure, placing the magnetoelectric composite structure between two clean and smooth corundum white boards, applying prestress to the magnetoelectric composite structure by using 2-5 kg of nonmagnetic flat copper blocks, then placing the whole device in a vacuum sintering furnace for sintering, heating the temperature of the vacuum sintering furnace from room temperature to 550 ℃ at the heating rate of 3 ℃/min, and preserving the heat for 12-24 hours;

(6) reducing the temperature from 550 ℃ to room temperature at a cooling rate of 3 ℃/min, and then leading out the BiScO for feeding the piezoelectric material layer from the metal Ag electrode₃-PbTiO₃And electrifying two wires for electrifying the electrodes and outputting signals by the piezoelectric ceramics to obtain the high-temperature-resistant flexible magnetoelectric sensor.

Technical Field

The invention relates to the technical field of multiferroic magnetoelectric materials, in particular to a high-temperature-resistant flexible magnetoelectric sensor and a preparation method thereof.

Background

The multiferroic magnetoelectric material has wide application prospect in high-tech fields such as data storage, transducers, magnetoelectric sensors and the like. Among them, the magnetoelectric sensor is a new sensitive electronic element, and compared with the traditional magnetic sensor sensitive electronic element, the magnetoelectric sensor has the advantages of higher room temperature sensitivity and stability, lower preparation cost, smaller size, green environmental protection, zero power consumption and the like, so the magnetoelectric sensor is considered as one of the magnetic field sensors with the most development potential. However, with the development of scientific technology, the requirements of the fields of national defense safety, intelligent transportation, geomagnetic detection, energy collection, advanced manufacturing and the like on the magnetoelectric sensor are higher and higher, and the common magnetoelectric sensor cannot meet the requirements of the industry. For example, in the field of aerospace, an engine is a high-temperature and high-speed rotating mechanical device, and the working state of the engine is in a severe environment of high temperature, oil mist and high-frequency vibration, so that the requirement on a sensor for measuring the rotation characteristic of the engine is very strict, and the sensor is required to have the characteristics of high temperature resistance, fatigue resistance and the like; the highest temperature on the moon surface can reach 330 ℃, and the device needing to enter the space continuously and stably works for more than 10 ten thousand hours under the high-temperature condition, so that the aerospace field has stricter requirements on the high-temperature magnetoelectric sensor; in the nuclear industry and the geomagnetic detection system, a high-temperature resistant magnetic sensor is also in great demand, but the detection of a magnetic signal in a severe environment is difficult to meet by a common magnetic sensor due to poor high-temperature stability. Therefore, it has become necessary to develop a flexible magnetoelectric sensor which is resistant to high temperature.

The Terfenol-D single crystal is used as a high-performance magnetostrictive material, the magnetostrictive coefficient lambda of the Terfenol-D single crystal is up to 2000ppm, and the ferromagnetic Curie temperature T_c650 ℃. And when the Terfenol-D works to be above the Curie temperature of the ferromagnetism, the magnetostrictive characteristic of the Terfenol-D only disappears temporarily, and when the Terfenol-D is cooled to be below the Curie temperature, the magnetostrictive characteristic of the Terfenol-D can be completely recovered, so that the Terfenol-D can be applied to the field of high-temperature electronic devices. BiScO₃-PbTiO₃The piezoelectric ceramic exhibits a high piezoelectric constant d₃₃Approximately equal to 450pC/N and Curie temperature higher than 450 ℃ are ferroelectric materials with excellent performance. The material layer is made of Terfenol-D single crystal and the BiScO₃-PbTiO₃Magnetoelectric sensor prepared by taking piezoelectric ceramic as piezoelectric material layer is expected to be high-temperature ring at 350-400 DEG CAnd the operation is stable in the environment.

In 2005, Dong et al pioneered development of a three-layer push-pull composite structure magnetoelectric sensor with a PMN-PT piezoelectric layer and a Terfenol-D magnetostrictive layer, optimized the interaction between magnetostrictive laminated piezoelectric layers by symmetric polarization around the center line in the piezoelectric layer, significantly increased magnetoelectric voltage coefficient, reached 20V/Oe at resonance, and measured up to 10 at room temperature and under resonant conditions^-12Low frequency magnetic field sensitivity of T (Dong, S.X.; ZHai, J.Y.; Bai, F.M.; Li, J.F., Push-pull mode magnetic/piezoelectric laminate composite with an enhanced magnetic field coeff.) of]Applied Physics Letters,2005,87(6): 062502). Wang et al reported that a magnetoelectric sensor composed of Metglas magnetostrictive material and piezoelectric fibers achieved extremely low equivalent magnetic noise through significant magnetoelectric coupling effect and a method of reducing internal noise sources, and the magnetoelectric electric field coefficient and the magnetoelectric charge coefficient of the magnetoelectric heterojunction in quasi-static state were as high as 52V/(cm × Oe) and 2680pC/Oe, respectively. The high magnetoelectricity properties are generated by the structure of using interdigital electrodes instead of the conventional magnetoelectric heterojunction parallel plate capacitor (Wang, Y.J.; David Gray; David Berry; Gao, J.Q.; Li, M.H.; Li, J.F.; Dlight Viehland, An extreme low equivalent magnetic semiconductor sensor [ J.J.)].Advanced Materials,2011,23(35):4111-4114)。

At present, in order to meet the requirements of a magnetoelectric sensor in high and new fields of artificial intelligence, biomedicine and the like, research on flexible magnetoelectric composite materials is paid attention to by material scientists. Palnededi H et al as LaNiO₃/HfO₂And (001) oriented PZT thin films are deposited on the buffered flexible Ni foil substrate to prepare the PZT/Ni flexible magnetoelectric heterojunction material. PZT/Ni flexible magnetoelectric heterojunction material in bias magnetic field H_dcThe magnetoelectric field coefficient can reach 3.2V/(cm. times. Oe) at 10Oe, and the excellent magnetoelectric field coefficient is attributed to the strong interface coupling property and the texturing of PZT grains having a c-domain state (Palnededi H; Hong Goo Yeo; Geon Tae Hwang; Venkatesvaru Annapuready; Jong Wo Kimet; Jong Jin Choi; Susan Trolier Mckingplant; Jungho Ryu, A flex, high-performance magnetoelectric heterojunctionture of(001)oriented Pb(Zr_0.52Ti_0.48)O₃ film grown on Ni foil[J]APL Materials,2017,5(9): 096111). Amrillah T et al attempted epitaxial growth of self-assembled BiFeO on flexible mica substrates₃-CoFe₂O₄Heterojunction to obtain BiFeO₃-CoFe₂O₄The mica inorganic magnetoelectric nano composite material is characterized in that the heterojunction is formed by vertically arranged multiferroic BiFeO₃Nano-pillar embedded ferromagnetic CoFe₂O₄In the matrix. The saturation magnetization Ms of the magnetoelectric composite material is 237emu/cm3, and the coercive field Hc is 2 kOe; coefficient of magnetoelectric electric field alpha_MECan reach 74 mV/(cm. times. Oe) and remain stable under the conditions of compression bending and tensile bending (Amrillah T; Bitla Y; Shin K; et al. flexible multi-carboxylic bulk-coupling with a giant magnetic coupling via van der waals epitoxy [ J ])].ACS Nano,2017,11(6):6122-6130)。

In summary, it is found that the preparation of the magnetoelectric heterojunction material by bonding the magnetostrictive material and the piezoelectric material with the epoxy resin is a common method for preparing the magnetoelectric sensor, but the epoxy resin has poor high temperature resistance, and the magnetoelectric sensor prepared by using the epoxy resin as the adhesive is only suitable for being used at room temperature. In addition, the Curie temperature of the piezoelectric ceramics such as PMN-PT, PZT and PZN-PT is too low to meet the requirement that the magnetoelectric sensor is used in a high-temperature environment above 350 ℃. These all very big restrictions magnetoelectric sensor in earth magnetism detection, national defense safety etc. relate to the development of high temperature field. In addition, the magnetoelectric field coefficient of the flexible magnetoelectric sensor prepared at present is lower, and the market also lacks a flexible magnetoelectric sensor with the performance which can be rival to that of a rigid magnetoelectric sensor. Therefore, there is a need for a flexible magnetoelectric sensor with high temperature resistance, which is low in cost, and simple and efficient to manufacture.

Disclosure of Invention

In order to solve the problems, the invention provides a high-temperature-resistant flexible magnetoelectric sensor and a preparation method thereof.

In one aspect, the present invention provides a high temperature resistant flexible magnetoelectric sensorThe sensor is composed of a magnetostrictive material layer Terfenol-D single crystal and a piezoelectric material layer BiScO₃-PbTiO₃The piezoelectric ceramic is a magnetoelectric composite structure formed by bonding high-temperature silver colloid. Wherein the ratio of the length to the width of the high-temperature-resistant flexible magnetoelectric sensor is 5: 1; the thickness ratio of the magnetostrictive material layer to the piezoelectric material layer in the high-temperature-resistant flexible magnetoelectric sensor is 2:1 to 3:1, and the total thickness is 0.3 mm to 0.5 mm.

On the other hand, the invention also provides a preparation method of the high-temperature-resistant flexible magnetoelectric sensor.

The preparation process of the high-temperature-resistant flexible magnetoelectric sensor comprises the following steps:

(1) respectively melting and solidifying BiScO by adopting paraffin₃-PbTiO₃Fixing the piezoelectric ceramics and the Terfenol-D single crystal on a polished glass substrate, and mechanically thinning and polishing the BiScO₃-PbTiO₃Thinning piezoelectric ceramic and Terfenol-D single crystal, BiScO₃-PbTiO₃The surface roughness of the piezoelectric ceramic and the Terfenol-D single crystal is 10 to 100 nanometers;

(2) after mechanical thinning, the BiScO is subjected to silk-screen printing₃-PbTiO₃Preparing a metal Ag electrode on one surface of the piezoelectric ceramic;

(3) on dry oil-free filter paper, a magnetostrictive material layer Terfenol-D single crystal and a piezoelectric material layer BiScO₃-PbTiO₃The surface of the piezoelectric ceramic on which the metal Ag electrode does not grow is subjected to interlayer bonding by using high-temperature silver adhesive, and then the redundant high-temperature silver adhesive extruded out around the magnetoelectric composite structure is removed by using a soft scraper;

(4) placing the bonded magnetoelectric composite structure into a vacuum bag, and vacuumizing by using a vacuum compressor to preliminarily bond the magnetostrictive material layer and the piezoelectric material layer;

(5) and taking out the vacuumized magnetoelectric composite structure, placing the magnetoelectric composite structure between two clean and smooth corundum white boards, and applying prestress to the magnetoelectric composite structure by using 2-5 kg of nonmagnetic flat copper blocks. Then the whole device is placed in a vacuum sintering furnace for sintering, the temperature of the vacuum sintering furnace is increased from room temperature to 550 ℃ at the heating rate of 3 ℃/min, and the temperature is kept for 12 hours to 24 hours;

(6) reducing the temperature from 550 ℃ to room temperature at a cooling rate of 3 ℃/min, and then leading out the BiScO for feeding the piezoelectric material layer from the metal Ag electrode₃-PbTiO₃And electrifying two wires for electrifying the electrodes and outputting signals by the piezoelectric ceramics to obtain the high-temperature-resistant flexible magnetoelectric sensor.

Preferably, the piezoelectric material layer BiScO of the high-temperature-resistant flexible magnetoelectric sensor₃-PbTiO₃The ferroelectric polarization direction of the piezoelectric ceramic is the thickness direction thereof.

Preferably, in the step (6), the sintering temperature in the vacuum sintering furnace is kept for 18 hours.

Compared with the prior art, the invention has the following remarkable advantages:

(1) the invention adopts Terfenol-D single crystal and BiScO₃-PbTiO₃The piezoelectric ceramic is used as a magnetostrictive material layer and a piezoelectric material layer, and high-temperature silver colloid is used as a binder, so that the magnetoelectric sensor can be normally used in a high-temperature working environment of more than 350 ℃.

(2) The magnetoelectric sensor obtained by the invention has good flexibility, and the minimum bending diameter is 10.7 mm.

(3) The invention adopts a vacuum compressor vacuumizing method to preliminarily bond the magnetostrictive material layer and the piezoelectric material layer, and then adopts a load sintering method in a vacuum sintering furnace to realize the thorough bonding of the magnetostrictive material layer and the piezoelectric material layer, and the bonding mode enables the interface coupling performance between the magnetostrictive material layer and the piezoelectric material layer to be obviously improved and the performance to be comparable to that of a rigid magnetoelectric sensor.

(4) The magnetoelectric sensor obtained by the invention has the advantages of simple structure, low manufacturing cost, batch production and high success rate.

Drawings

Fig. 1 is a simplified structural diagram of a high-temperature-resistant flexible magnetoelectric sensor of the present invention.

Fig. 2 is a graph showing a variation relationship of quasi-static magnetoelectric electric field coefficients of the high-temperature-resistant flexible magnetoelectric sensor according to embodiment 1 of the present invention with a bias magnetic field.

FIG. 3 shows the bias magnetic field H of the high temperature resistant flexible magnetoelectric sensor in embodiment 1 of the present invention_dc3Oe, the magnetoelectric electric field coefficient is a curve chart according to the change of the excitation magnetic field frequency.

Fig. 4 shows the flexible magnetoelectric sensors in embodiments 1 to 24 of the present invention in a bias magnetic field H_dcAnd (3 Oe), a graph of the change of the magnetoelectric electric field coefficient under quasi-static and resonance state conditions.

Fig. 5 shows the flexible magnetoelectric sensors according to embodiments 25 to 48 of the present invention in a bias magnetic field H_dcAnd (3 Oe), a graph of the change of the magnetoelectric electric field coefficient under quasi-static and resonance state conditions.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, a technical solution of a high temperature resistant flexible magnetoelectric sensor structure of the present invention is clearly and completely described below with reference to the accompanying drawings and embodiments.

The structure of the high-temperature-resistant flexible magnetoelectric sensor is shown in figure 1, and the structure is as follows: the piezoelectric device comprises a metal Ag electrode 1, a piezoelectric material layer 2, an adhesive layer (metal Ag electrode) 3, a magnetostrictive layer 4, and two leads 5 and 6 which are led out from the metal Ag electrode 1 and the metal Ag electrode 3 and used for electrifying the piezoelectric material layer 2 and outputting signals.

The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.

Example 1

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor.

1. The preparation method of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor comprises the following steps:

(1) BiScO with length of 10 mm and width of 2 mm is treated with paraffin₃-PbTiO₃Fixing the piezoelectric ceramic on a polished glass substrate, then thinning the thickness of the piezoelectric ceramic to 0.15 mm by adopting a mechanical thinning and polishing method, thinning the thickness of a magnetostrictive material layer Terfenol-D single crystal with the length of 8 mm and the width of 2 mm to 0.35 mm, wherein the surface roughness of the piezoelectric ceramic and the magnetostrictive material layer Terfenol-D single crystal is 10 nanometers;

(2) after mechanical thinning, the BiScO is subjected to silk-screen printing₃-PbTiO₃Preparing a metal Ag electrode on one surface of the piezoelectric ceramic;

(3) on dry oil-free filter paper, a magnetostrictive material layer Terfenol-D single crystal and a piezoelectric material layer BiScO₃-PbTiO₃The surface of the piezoelectric ceramic on which the metal Ag electrode does not grow is subjected to interlayer bonding by using high-temperature silver adhesive, and then the redundant high-temperature silver adhesive extruded out around the magnetoelectric composite structure is removed by using a soft scraper;

(4) placing the bonded magnetoelectric composite structure into a vacuum bag, vacuumizing by using a vacuum compressor to preliminarily bond the magnetostrictive material layer and the piezoelectric material layer, and keeping for 12 hours;

(5) and taking out the vacuumized magnetoelectric composite structure, placing the magnetoelectric composite structure between two clean and smooth corundum white boards, and applying prestress to the magnetoelectric composite structure by using 2 kg of nonmagnetic flat copper blocks. Then the whole device is placed in a vacuum sintering furnace for sintering, the temperature of the vacuum sintering furnace is raised from room temperature to 550 ℃ at the heating rate of 3 ℃/minute, and the temperature is kept for 18 hours.

(6) Reducing the temperature from 550 ℃ to room temperature at a cooling rate of 3 ℃/min, and then leading out the BiScO for feeding the piezoelectric material layer from the metal Ag electrode₃-PbTiO₃And electrifying two wires for electrifying the electrodes and outputting signals by the piezoelectric ceramics to obtain the high-temperature-resistant flexible magnetoelectric sensor.

2. The performance characterization of the high-temperature-resistant flexible magnetoelectric sensor comprises the following steps:

(1) the piezoelectric material is polarized by positive and negative leads led out from the metal Ag electrode, and is polarized for 15 minutes by adopting a 50kV/cm polarization electric field, so that the piezoelectric material has piezoelectricity. Then using quasi-static d of ZJ-4AN type of the institute of acoustics of Chinese academy of sciences₃₁The measuring instrument measures the piezoelectric constant d of the piezoelectric ceramic subjected to the polarization process₃₁。

(2) BiScO test by using magnetoelectric test system independently built in laboratory₃-PbTiO₃The magnetic performance of the/Terfenol-D magnetoelectric sensor in a quasi-static state (f is 1 kHz). Fixed excitation field of H_acTest BiScO at 0.3Oe, f at 1kHz₃-PbTiO₃Magnetoelectric electric field coefficient alpha of/Terfenol-D magnetoelectric sensor_MEFollowing bias magnetic field H_dcThe direction of the applied magnetic field is along the length direction of the magnetoelectric sensor. Testing to obtain BiScO₃-PbTiO₃The optimal bias magnetic field of the/Terfenol-D magnetoelectric sensor is 3Oe, and the magnetoelectric electric field coefficient alpha at the bias magnetic field_MEA maximum value of about 63V/(cm. times. Oe) was reached.

(3) Testing of BiScO at ambient temperature and 380 deg.C₃-PbTiO₃/Terfenol-D magnetoelectric sensor in optimal bias magnetic field H_dcMagnetoelectric electric field coefficient alpha under 3Oe_METhe frequency range tested was 25kHz to 65kHz as a function of the frequency of the excitation field. Testing to obtain BiScO₃-PbTiO₃The resonance frequency of the/Terfenol-D magnetoelectric sensor is 42kHz, and the corresponding magnetoelectric electric field coefficient alpha at the resonance frequency_ME1631V/(cm × Oe), and a magnetoelectric electric field coefficient alpha corresponding to the resonance frequency at 380 deg.C_ME＝817V/(cm×Oe)。

(4) BiScO Using double-sided tape₃-PbTiO₃the/Terfenol-D magnetoelectric sensor is fixed on a card paper, the bending diameter of the magnetoelectric sensor is 10.7 mm by bending the card paper, and the magnetoelectric sensor is restored to be flat, so that a bending-restoring cycle is generated. Cycle 10³After that, the test was carried out at a fixed excitation field of H_ac0.3Oe, f 1kHz, BiScO₃-PbTiO₃Magnetoelectric electric field coefficient alpha of/Terfenol-D magnetoelectric sensor_MEFollowing bias magnetic field H_dcThe direction of the applied magnetic field is along the length direction of the magnetoelectric sensor. Testing to obtain BiScO₃-PbTiO₃The optimal bias magnetic field of the/Terfenol-D magnetoelectric sensor is 3Oe, and the magnetoelectric electric field coefficient alpha at the bias magnetic field_ME63.1V/(cm × Oe). Discovery of BiScO₃-PbTiO₃The magnetoelectric performance of the/Terfenol-D magnetoelectric sensor is basically kept unchanged.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field system in resonance stateNumber alpha_MEAs shown in table 1, example 1.

Example 2

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: the surface roughness in step (1) of this example was 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 2.

Example 3

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in step (5) of this example, a magnetoelectric composite structure was prestressed with 3.5 kg of a nonmagnetic flat copper block.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 3.

Example 4

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the example, the surface roughness was 100 nm in step (1), and 3.5 kg of a nonmagnetic flat copper block was used to prestress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 4.

Example 5

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in step (5) of this example, a magnetoelectric composite structure was prestressed with 5 kg of a nonmagnetic flat copper block.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 5.

Example 6

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the example, the surface roughness in step (1) was 100 nm, and in step (5), 5 kg of a non-magnetic flat copper block was used to prestress the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 6.

Example 7

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: the thickness of the piezoelectric ceramic in step (1) of this example was 0.1 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 7.

Example 8

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 8.

Example 9

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the piezoelectric ceramic in step (1) is 0.1 mm, and in step (5), a magnetoelectric composite structure is prestressed by a nonmagnetic flat copper block of 3.5 kg.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 9.

Example 10

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of the present example, the thickness of the piezoelectric ceramic is 0.1 mm, the surface roughness is 100 nm, and in the step (5), a 3.5 kg non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 10.

Example 11

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the piezoelectric ceramic in step (1) is 0.1 mm, and in step (5), a 2 kg non-magnetic flat copper block is used to pre-stress the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 11.

Example 12

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of the present example, the thickness of the piezoelectric ceramic is 0.1 mm, the surface roughness is 100 nm, and in the step (5), a 5 kg non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 12.

Example 13

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) of this example was 0.3 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 13.

Example 14

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 14.

Example 15

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) was 0.3 mm, and 3.5 kg of a nonmagnetic flat copper block was used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 15.

Example 16

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) is 0.3 mm, the surface roughness is 100 nm, and 3.5 kg of a non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 16.

Example 17

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) is 0.3 mm, and 5 kg of a nonmagnetic flat copper block is used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 17.

Example 18

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the embodiment, the thickness of the magnetostrictive material layer Terfenol-D single crystal in the step (1) is 0.3 mm, the surface roughness is 100 nanometers, and 5 kilograms of non-magnetic flat copper blocks are used for applying prestress to the magnetoelectric composite structure in the step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 18.

Example 19

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic was 0.1 mm, and the thickness of the magnetostrictive material layer Terfenol-D single crystal was 0.3 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 19.

Example 20

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 20.

Example 21

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, and in the step (5), a nonmagnetic flat copper block of 3.5 kg is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 21.

Example 22

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, the surface roughness is 100 nm, and in (5), a nonmagnetic flat copper block of 3.5 kg is used to apply prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 22.

Example 23

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, and in the step (5), a 5 kg non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 23.

Example 24

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.3 mm, the surface roughness is 100 nm, and in the step (5), a 5 kg non-magnetic flat copper block is used to apply prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 24.

Example 25

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) of this example was 0.25 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEHarmonic of the designMagnetoelectric electric field coefficient alpha under vibration state_MEAs shown in table 1, example 25.

Example 26

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 26.

Example 27

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) was 0.25 mm, and 3.5 kg of a nonmagnetic flat copper block was used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 27.

Example 28

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) is 0.25 mm, the surface roughness is 100 nm, and 3.5 kg of a non-magnetic flat copper block is used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending ofQuasi-static lower magnetoelectric electric field coefficient alpha after bending_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 28.

Example 29

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) was 0.25 mm, and 5 kg of a nonmagnetic flat copper block was used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 29.

Example 30

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the embodiment, the thickness of the magnetostrictive material layer Terfenol-D single crystal in the step (1) is 0.25 mm, the surface roughness is 100 nanometers, and in the step (5), 5 kilograms of non-magnetic flat copper blocks are used for applying prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 30.

Example 31

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic was 0.1 mm, and the thickness of the magnetostrictive material layer Terfenol-D single crystal was 0.25 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 31.

Example 32

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 32.

Example 33

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, and in the step (5), a nonmagnetic flat copper block of 3.5 kg is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 33.

Example 34

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, the surface roughness is 100 nm, and in (5), a nonmagnetic flat copper block of 3.5 kg is used to apply prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 34.

Example 35

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, and in the step (5), a 5 kg non-magnetic flat copper block is used to pre-stress the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 35.

Example 36

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.25 mm, the surface roughness is 100 nm, and in (5), a 5 kg non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 36.

Example 37

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) of this example was 0.2 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 37.

Example 38

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 38.

Example 39

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) was 0.2 mm, and 3.5 kg of a nonmagnetic flat copper block was used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 39.

Example 40

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) is 0.2 mm, the surface roughness is 100 nm, and 3.5 kg of a non-magnetic flat copper block is used to apply a prestress to the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 40.

EXAMPLE 41

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in this example, the thickness of the magnetostrictive material layer Terfenol-D single crystal in step (1) is 0.2 mm, and 5 kg of a nonmagnetic flat copper block is used to pre-stress the magnetoelectric composite structure in step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 41.

Example 42

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the embodiment, the thickness of the magnetostrictive material layer Terfenol-D single crystal in the step (1) is 0.2 mm, the surface roughness is 100 nanometers, and 5 kilograms of non-magnetic flat copper blocks are used for applying prestress to the magnetoelectric composite structure in the step (5).

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 42.

Example 43

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, and the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 43.

Example 44

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, and the surface roughness is 100 nm.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 44.

Example 45

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, and in the step (5), a nonmagnetic flat copper block of 3.5 kg is used to apply a prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 45.

Example 46

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, the surface roughness is 100 nm, and in (5), a nonmagnetic flat copper block of 3.5 kg is used to apply prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 46.

Example 47

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, and in the step (5), a 5 kg non-magnetic flat copper block is used to pre-stress the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 47.

Example 48

The embodiment is a high-temperature-resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those of the embodiment 1, and the difference is that: in the step (1) of this example, the thickness of the piezoelectric ceramic is 0.1 mm, the thickness of the magnetostrictive material layer Terfenol-D single crystal is 0.2 mm, the surface roughness is 100 nm, and in the step (5), a 5 kg non-magnetic flat copper block is used to apply prestress to the magnetoelectric composite structure.

Piezoelectric constant d of piezoelectric material of magnetoelectric sensor obtained in this example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_MEAs shown in table 1, example 48.

Fig. 2 is a graph showing a variation relationship of quasi-static magnetoelectric electric field coefficients of the high-temperature-resistant flexible magnetoelectric sensor according to embodiment 1 of the present invention with a bias magnetic field. FIG. 3 shows the bias magnetic field H of the high temperature resistant flexible magnetoelectric sensor in embodiment 1 of the present invention_dc3Oe, the magnetoelectric electric field coefficient is a curve chart according to the change of the excitation magnetic field frequency. Fig. 4 shows the flexible magnetoelectric sensors in embodiments 1 to 24 of the present invention in a bias magnetic field H_dcAnd (3 Oe), a graph of the change of the magnetoelectric electric field coefficient under quasi-static and resonance state conditions. Fig. 5 shows the flexible magnetoelectric sensors according to embodiments 25 to 48 of the present invention in a bias magnetic field H_dcAnd (3 Oe), a graph of the change of the magnetoelectric electric field coefficient under quasi-static and resonance state conditions.

Table 1 table for selecting parameters of each embodiment

TABLE 2 piezoelectric constant d of piezoelectric material of flexible magnetoelectric sensor for high temperature resistance of each example₃₁Quasi-static lower magnetoelectric electric field coefficient alpha_MEBending quasi-static lower magnetoelectric electric field coefficient alpha_MEMagnetoelectric field coefficient alpha in resonance state_METable (7).

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