Method, device and equipment for removing mask plate defects without traces and storage medium thereof
阅读说明：本技术 掩模版缺陷无痕去除方法、装置、设备及其存储介质 (Method, device and equipment for removing mask plate defects without traces and storage medium thereof ) 是由 叶小龙 黄执祥 王栋 于 2021-08-13 设计创作，主要内容包括：本申请公开了一种掩模版缺陷无痕去除方法、装置、设备及其存储介质,该方法包括：对刻蚀后的掩模版进行缺陷检测,得到掩模版上的若干个缺陷的位置信息和尺寸信息；根据各缺陷的尺寸信息确定第一脉冲频率；根据第一脉冲频率选用去除需要的激光器；通过去除需要的激光器对缺陷表面感光胶进行定点去除；通过刻蚀液对已去除感光胶的缺陷进行定点刻蚀。本申请提供的上述技术方案,不会对感光胶下的缺陷金属层和玻璃基板进行作用,因为材质不同于金属层,感光胶在受激光作用后蒸发并不会继续沉积,最后通过刻蚀液对已去除感光胶的缺陷进行定点刻蚀,不存在影响基板光透率和相位差的印痕。(The application discloses a method, a device, equipment and a storage medium for removing a mask plate defect without a mark, wherein the method comprises the following steps: detecting defects of the etched mask plate to obtain position information and size information of a plurality of defects on the mask plate; determining a first pulse frequency according to the size information of each defect; selecting a laser required to be removed according to the first pulse frequency; removing the photosensitive resist on the surface of the defect at a fixed point by removing a required laser; and etching the defects of which the photosensitive resist is removed at fixed points by using the etching liquid. The application provides an above-mentioned technical scheme can not act on defect metal level and glass substrate under the photosensitive resist, because the material is different from the metal level, the photosensitive resist can not continue the deposit by receiving laser action back evaporation, carries out the fixed point sculpture through the etching solution to the defect of having got rid of the photosensitive resist at last, does not have the impression that influences base plate light transmittance and phase difference.)
1. A method for removing a mask plate defect without a mark is characterized by at least comprising the following steps:
1) detecting defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain position information and size information of a plurality of defects on the mask plate;
2) determining a first pulse frequency according to the position information and the size information of each defect, and selecting the energy emitted by the first pulse frequency to be 5% -10% of preset energy when the size information is larger than 100 um;
3) selecting a laser required for removal according to the first pulse frequency, wherein the second pulse frequency on the laser required for removal is 1-1.5 times of the first pulse frequency;
4) carrying out fixed-point physical evaporation removal on the developed and solidified photosensitive resist on the surface of the defect by the laser required for removal;
5) carrying out fixed-point chemical etching on the defects of which the photosensitive resist is removed by using the diluted 1/3 etching solution, and recovering the reaction solution;
6) transmittance T comparing the size area A of the removed photoresist defects1And transmittance T of blank area B2Wherein area A is equal to area B;
when T is1＜T2If so, repeating the steps 1) to 5) when T is reached1＝T2And then, the whole process is finished.
2. The reticle defect mark-free removal method of claim 1, wherein the determining a first pulse frequency based on the size information of each defect comprises:
calculating the size area C of the defect;
when the ratio of the size area C of the defect to the preset reference size area D is larger than 0.5 and smaller than 1, selecting a first pulse frequency as a nanosecond pulse signal source, adjusting the nanosecond pulse signal source to emit high-frequency laser, and when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5, adjusting the nanosecond pulse signal source to emit low-frequency laser;
and when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
3. The method for traceless removal of the mask defects according to claim 1, wherein the fixed-point physical evaporation removal of the photoresist on the defect surface which is developed and solidified by the laser required for removal comprises:
determining the amount of photosensitive glue according to the size information of each defect;
and setting the working time of the laser device required for removing according to the amount of the photosensitive glue, and carrying out fixed-point physical evaporation removal on the photosensitive glue with the developed and solidified defect surface by using the laser device required for removing in the set time.
4. The method for traceless removal of the mask defects according to claim 1, wherein the fixed-point chemical etching of the photoresist-removed defects by the diluted 1/3 etching solution comprises:
determining whether the defects of the removed photosensitive resist are regular patterns;
when the defects of the removed photosensitive resist are irregular patterns, performing fixed-point chemical etching on the defects of the removed photosensitive resist by controlling the diluted 1/3 etching solution according to a preset flow rate;
and when the defects of the removed photosensitive resist are regular patterns, carrying out fixed-point chemical etching on the defects of the removed photosensitive resist according to a preset track by high-pressure plasma.
5. The method for traceless removal of the mask defects according to claim 1, wherein after the photoresist-removed defects are chemically etched in a fixed point by the diluted 1/3 etchant and the reaction solution is recovered, the method further comprises: and (5) cleaning the equipment.
6. The method for traceless removal of defects from a mask according to claim 1, wherein before the defect detection of the mask which is etched but has not removed the photoresist of the protective layer, the method further comprises:
and exposing and developing the mask.
7. A mask plate defect traceless removing device is characterized by comprising:
the detection unit is used for detecting the defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain the position information and the size information of a plurality of defects on the mask plate;
the determining unit is used for determining a first pulse frequency according to the position information and the size information of each defect, and when the size information is larger than 100um, the energy emitted by the first pulse frequency is selected to be 5% -10% of preset energy;
the selecting unit is used for selecting a laser required to be removed according to the first pulse frequency, and the second pulse frequency on the laser required to be removed is 1-1.5 times of the first pulse frequency;
the removing unit is used for carrying out fixed-point physical evaporation removal on the photosensitive resist of which the defect surface is developed and solidified through the laser required for removing;
the etching unit is used for carrying out fixed-point chemical etching on the defects of the removed photosensitive resist by using the diluted 1/3 etching solution and recovering the reaction solution;
a comparison unit for comparing the transmittance T of the size area A with the defects of the photoresist removed1And transmittance T of blank area B2Wherein area A is equal to area B;
when T is1＜T2If so, repeating the steps 1) to 5) when T is reached1＝T2And then, the whole process is finished.
8. The reticle defect mark-free removal device of claim 7, wherein the determination unit comprises:
a calculation unit for calculating a size area C of the defect;
the judging unit is used for selecting a first pulse frequency as a nanosecond pulse signal source when the ratio of the size area C of the defect to a preset reference size area D is larger than 0.5 and smaller than 1, adjusting the nanosecond pulse signal source to emit high-frequency laser at the same time, and adjusting the nanosecond pulse signal source to emit low-frequency laser when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5;
and when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
9. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the method according to any of claims 1-6 when executing the program.
10. A computer-readable storage medium having stored thereon a computer program for:
the computer program, when executed by a processor, implementing the method as claimed in any one of claims 1-6.
Technical Field
The invention relates to the technical field of chip production, in particular to a method, a device and equipment for removing defects of a mask plate without traces and a storage medium thereof.
Background
The photolithography mask (also called "mask", "Photomask", "reticle", english name "ma s k or" reticle ", hereinafter collectively referred to as" mask ") is a precision coated glass substrate containing electronic circuit microscopic images, is a core component in the manufacturing process of electronic products in the information technology industry, and is used for transferring the circuit pattern of a designer to a glass substrate or a semiconductor wafer used by downstream products in a photolithography manner, and then performing subsequent processes until the final product is obtained after packaging and testing are qualified. The mask is the standard and the blueprint of the photoetching copied graph, and any defect on the mask can greatly influence the precision of the final graph and directly influence the high-quality product rate of the final product.
The mask plate mainly comprises a glass substrate and a graphical chromium metal film on the surface of the glass substrate, wherein the thickness of the chromium film is about 150 nm. The production flow can be briefly described as follows: the method comprises the steps of sequentially depositing a chromium film and coating a light resistance material on a glass substrate (Blanks), drawing various required design patterns by utilizing laser direct writing photoetching equipment, removing the light resistance material which is not required on the substrate through a developing process, removing the chromium film which is not covered by the light resistance through an etching process, removing the residual light resistance through a film removing liquid, and finally forming a design pattern effect on the substrate, wherein the pattern comprises a light-transmitting part and a light-tight part. In a process for manufacturing a photomask for a TFT or a semiconductor, an optical protective film (Pellicle) for dust prevention needs to be adhered to the surface of the photomask.
One or more product defects may exist with a certain probability in the production and manufacturing process of the mask, and the product defects are roughly classified into three types: black defects, white defects, substrate defects. The main reason for the formation of black defects is that dust or foreign matters fall on the photoresist layer before exposure or development, and the unexposed area or the developed area is blocked, so that the etched area is not etched, and the black defects are formed after stripping.
When the mask plate has defects, the defects need to be repaired, and the common black defect repairing method comprises the following steps: the black defects are removed using a focused laser beam formed using a millisecond pulse laser or a nanosecond laser. When the pulse coherent light emitted by the laser is converged on the metal layer forming the black defect through a group of optical focusing systems, the metal layer is instantly heated and melted and evaporated due to the absorption of the energy carried by the laser beam, thereby realizing the 'removal' of the black defect.
However, in practice, not only the physical reaction in which the metal layer is evaporated by the laser but also the chemical reaction in which the evaporated metal is re-deposited by heating with the laser exist in the process. Meanwhile, the surface of the glass substrate in the original black defect area is damaged due to the influence of the condensed laser beam. Both redeposition of metal and damage to the glass surface can reduce the optical transmittance and create optical retardation in this region, known as "laser marking" in the reticle industry.
Disclosure of Invention
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide a reticle defect traceless removal method, apparatus, device and storage medium thereof.
In a first aspect, an embodiment of the present application provides a method for non-mark removal of a reticle defect, the method at least includes the following steps:
1) detecting defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain position information and size information of a plurality of defects on the mask plate;
2) determining a first pulse frequency according to the position information and the size information of each defect, and selecting the energy emitted by the first pulse frequency to be 5% -10% of preset energy when the size information is larger than 100 um;
3) selecting a laser required for removal according to the first pulse frequency, wherein the second pulse frequency on the laser required for removal is 1-1.5 times of the first pulse frequency;
4) carrying out fixed-point physical evaporation removal on the developed and solidified photosensitive resist on the surface of the defect by the laser required for removal;
5) carrying out fixed-point chemical etching on the defects of which the photosensitive resist is removed by using the diluted 1/3 etching solution, and recovering the reaction solution;
6) transmittance T comparing the size area A of the removed photoresist defects1And transmittance T of blank area B2Wherein, area A, etcIn area B;
when T is1＜T2If so, repeating the steps 1) to 5) when T is reached1＝T2And then, the whole process is finished.
Further, the determining a first pulse frequency according to the size information of each defect includes:
calculating the size area C of the defect;
when the ratio of the size area C of the defect to the preset reference size area D is larger than 0.5 and smaller than 1, selecting a first pulse frequency as a nanosecond pulse signal source, adjusting the nanosecond pulse signal source to emit high-frequency laser, and when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5, adjusting the nanosecond pulse signal source to emit low-frequency laser;
and when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
Further, the removing the photosensitive resist on the surface of the defect, which has been developed and solidified, by the laser for removing the required laser, includes:
determining the amount of photosensitive glue according to the size information of each defect;
and setting the working time of the laser device required for removing according to the amount of the photosensitive glue, and carrying out fixed-point physical evaporation removal on the photosensitive glue with the developed and solidified defect surface by using the laser device required for removing in the set time.
Further, the fixed-point chemical etching of the photoresist-removed defect by the diluted 1/3 etching solution includes:
determining whether the defects of the removed photosensitive resist are regular patterns;
when the defects of the removed photosensitive resist are irregular patterns, performing fixed-point chemical etching on the defects of the removed photosensitive resist by controlling the diluted 1/3 etching solution according to a preset flow rate;
and when the defects of the removed photosensitive resist are regular patterns, carrying out fixed-point chemical etching on the defects of the removed photosensitive resist according to a preset track by high-pressure plasma.
Further, after the fixed-point chemical etching is performed on the photoresist-removed defects by the diluted 1/3 etching solution, and the reaction solution is recovered, the method further includes: and (5) cleaning the equipment.
Further, before the defect detection is performed on the mask plate which is etched but has not removed the protective layer photosensitive resist, the method further comprises the following steps:
and exposing and developing the mask.
In a second aspect, an embodiment of the present application provides a reticle defect traceless removing apparatus, including:
the detection unit is used for detecting the defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain the position information and the size information of a plurality of defects on the mask plate;
the determining unit is used for determining a first pulse frequency according to the position information and the size information of each defect, and when the size information is larger than 100um, the energy emitted by the first pulse frequency is selected to be 5% -10% of preset energy;
the selecting unit is used for selecting a laser required to be removed according to the first pulse frequency, and the second pulse frequency on the laser required to be removed is 1-1.5 times of the first pulse frequency;
the removing unit is used for carrying out fixed-point physical evaporation removal on the photosensitive resist of which the defect surface is developed and solidified through the laser required for removing;
the etching unit is used for carrying out fixed-point chemical etching on the defects of the removed photosensitive resist by using the diluted 1/3 etching solution and recovering the reaction solution;
a comparison unit for comparing the transmittance T of the size area A with the defects of the photoresist removed1And transmittance T of blank area B2Wherein area A is equal to area B;
when T is1＜T2If so, repeating the steps 1) to 5) when T is reached1＝T2And then, the whole process is finished.
Further, the determination unit includes:
a calculation unit for calculating a size area C of the defect;
the judging unit is used for selecting a first pulse frequency as a nanosecond pulse signal source when the ratio of the size area C of the defect to a preset reference size area D is larger than 0.5 and smaller than 1, adjusting the nanosecond pulse signal source to emit high-frequency laser at the same time, and adjusting the nanosecond pulse signal source to emit low-frequency laser when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5;
and when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
In a third aspect, embodiments of the present application provide a computer device including a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor executes the computer program to implement the method described in the embodiments of the present application.
In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored, the computer program being configured to:
the computer program, when executed by a processor, implements a method as described in embodiments of the present application.
The beneficial effects of the invention include:
the method determines a first pulse frequency through a defect size, selects a laser for removing the required laser according to the first pulse frequency, adjusts a second pulse frequency on the laser for removing the required laser so that the energy emitted by the second pulse frequency is matched with the energy required by the photosensitive adhesive layer for removing the non-metallic material, focuses the laser emitted by the laser for removing the required laser on the photosensitive adhesive layer for removing the non-metallic material, removes the photosensitive adhesive only because the energy emitted by the second pulse frequency is matched with the energy required by the photosensitive adhesive layer for removing the non-metallic material, does not act on a defect metal layer and a glass substrate under the photosensitive adhesive, evaporates and does not continue to deposit because the material is different from the metal layer after the photosensitive adhesive is acted by the laser, and finally carries out fixed-point etching on the defect of which the photosensitive adhesive is removed through an etching solution, there is no imprint that affects the light transmittance and phase difference of the substrate.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a schematic flow chart of a method for non-marking removal of a reticle defect according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of another method for non-marking reticle defect removal according to an embodiment of the present invention;
FIG. 3 is a block diagram illustrating an exemplary structure of a reticle defect mark-free removal apparatus 300 according to an embodiment of the present invention;
FIG. 4 is a block diagram illustrating an exemplary structure of yet another reticle defect mark-free removal apparatus 400 provided by an embodiment of the present invention;
FIG. 5 illustrates a schematic diagram of a computer system suitable for use in implementing embodiments of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Referring to fig. 1, fig. 1 shows a method for non-mark reticle defect removal according to an embodiment of the present application, where the method at least includes the following steps:
step 110: detecting defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain position information and size information of a plurality of defects on the mask plate;
step 120: determining a first pulse frequency according to the position information and the size information of each defect, and selecting the energy emitted by the first pulse frequency to be 5% -10% of preset energy when the size information is larger than 100 um;
step 130: selecting a laser required to be removed according to the first pulse frequency, wherein the second pulse frequency on the laser required to be removed is 1-1.5 times of the first pulse frequency;
step 140: carrying out fixed-point physical evaporation removal on the developed and solidified photosensitive resist on the surface of the defect by removing a required laser;
step 150: carrying out fixed-point chemical etching on the defects of which the photosensitive resist is removed by using the diluted 1/3 etching solution, and recovering the reaction solution;
step 160: comparing the transmittance T1 of a size area A from which the defects of the photoresist have been removed with the transmittance T2 of a blank area B, wherein the area A is equal to the area B;
when T1 < T2, then steps 1) to 5) are repeated, and when T1 is T2, the overall process is ended.
In the embodiment of the application, the method is applied to the mark-free removal of the defects of the mask, and the defects on the mask are removed without marks after a series of treatments. In the prior art, when defects are generated on a mask, the defects need to be repaired, and a common black defect repairing method comprises the following steps: the black defects are removed using a focused laser beam formed using a millisecond pulse laser or a nanosecond laser. When the pulse coherent light emitted by the laser is converged on the metal layer forming the black defect through a group of optical focusing systems, the metal layer is instantly heated and melted and evaporated due to the absorption of the energy carried by the laser beam, thereby realizing the 'removal' of the black defect. However, in practice, not only the physical reaction in which the metal layer is evaporated by the laser but also the chemical reaction in which the evaporated metal is re-deposited by heating with the laser exist in the process. Meanwhile, the surface of the glass substrate in the original black defect area is damaged due to the influence of the condensed laser beam. Both redeposition of metal and damage to the glass surface can reduce the optical transmittance and create optical retardation in this region, known as "laser marking" in the reticle industry.
In order to overcome the aurora impression generated in the prior art, the embodiment of the application provides a mask defect traceless removal method, the method determines a first pulse frequency through the defect size, then selects a laser for removing the required laser according to the first pulse frequency, adjusts and removes a second pulse frequency on the required laser at the moment so as to enable the energy emitted by the second pulse frequency to be matched with the energy required for removing the photosensitive adhesive layer of the non-metal material, then focuses the laser emitted by the laser for removing the required laser on the photosensitive adhesive layer of the non-metal material, and because the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer of the non-metal material, the emitted laser only removes the photosensitive adhesive and does not act on a defect metal layer and a glass substrate under the photosensitive adhesive, because the material is different from the metal layer, the photosensitive glue is evaporated after being acted by laser and can not be deposited continuously, and finally the defects of the removed photosensitive glue are etched at fixed points by the etching liquid, so that no mark influencing the light transmittance and phase difference of the substrate exists.
In order to better determine the first pulse frequency and avoid an excessive deviation between the first pulse frequency and the actual value, please refer to fig. 2, and fig. 2 shows a flowchart of a method for removing a reticle defect without a mark according to another embodiment of the present application.
As shown in fig. 2, the method includes:
step 210: calculating the size area C of the defect;
step 220: when the ratio of the size area C of the defect to the preset reference size area D is larger than 0.5 and smaller than 1, selecting a first pulse frequency as a nanosecond pulse signal source, adjusting the nanosecond pulse signal source to emit high-frequency laser, and when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5, adjusting the nanosecond pulse signal source to emit low-frequency laser;
when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
In the embodiment of the application, the area unit of the size area C of the defect is the same as that of the preset reference size area D, when the ratio of the size area C of the defect to the preset reference size area D is more than 0.5 and less than 1, the nanosecond pulse signal source is adjusted to emit high-frequency laser, and at the moment, the high-frequency laser emitted by the nanosecond pulse signal source is matched with the energy required by the photosensitive adhesive layer for removing the non-metallic material; when the ratio of the size area C of the defect to the preset reference size area D is less than 0.5, adjusting a nanosecond pulse signal source to emit low-frequency laser, wherein the low-frequency laser emitted by the nanosecond pulse signal source is matched with the energy required by the removal of the photosensitive adhesive layer of the non-metallic material; when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, adjusting a picosecond pulse signal source to emit high-frequency laser, wherein the high-frequency laser emitted by the picosecond pulse signal source is matched with the energy required by removing the photosensitive adhesive layer of the non-metallic material;
the first pulse frequency is selected according to the ratio of the size area C of the defect to the preset reference size area D, then the laser device required for removing is selected by utilizing the first pulse frequency, at the moment, the second pulse frequency on the laser device required for removing is adjusted, so that the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer made of the non-metal material, then the laser emitted by the laser device required for removing is focused on the photosensitive adhesive layer made of the non-metal material, and because the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer made of the non-metal material, the emitted laser only removes the photosensitive adhesive and does not act on the defect metal layer and the glass substrate under the photosensitive adhesive.
In some embodiments, the spot physical evaporation removal of the photoresist whose defect surface has been developed and cured by removing the required laser comprises: determining the amount of photosensitive adhesive according to the size information of each defect; and setting the working time of a laser required for removing according to the amount of the photosensitive glue, and carrying out fixed-point physical evaporation removal on the photosensitive glue with the developed and solidified defect surface by using the laser required for removing in the set time. Through setting the working time of the laser, the fault caused by overlong or insufficient working time of the laser can be effectively avoided, and the photosensitive resist on the surface of the defect can be effectively removed by the laser.
In some embodiments, the photoresist-removed defect is subjected to a spot chemical etching by using an etching solution diluted by 1/3, including: determining whether the defects of the removed photosensitive resist are regular patterns; when the defects of the removed photosensitive resist are irregular patterns, performing fixed-point chemical etching on the defects of the removed photosensitive resist by controlling the diluted 1/3 etching solution according to a preset flow rate; and when the defects of the removed photosensitive resist are regular patterns, carrying out fixed-point chemical etching on the defects of the removed photosensitive resist according to a preset track by high-pressure plasma.
In this embodiment, whether the defect of the removed photoresist is a regular pattern is distinguished, so that fixed-point chemical etching can be better performed, when the defect of the removed photoresist is an irregular pattern, at this time, etching is performed by using an etching liquid, then, the flow rate of the etching liquid is controlled, it is ensured that the etching liquid effectively falls into the defect, and it is avoided that a large amount of the etching liquid falls onto the defect, if the irregular pattern is etched by laser, a complicated laser route needs to be designed, so that the efficiency of the overall work is inevitably affected, when the defect of the removed photoresist is a regular pattern, since the laser route of the regular pattern itself is convenient to design, at this time, the defect of the removed photoresist is subjected to fixed-point etching by using high-pressure plasma according to a preset track.
In some embodiments, after performing the spot chemical etching on the photoresist-removed defect by the diluted 1/3 etching solution, and recovering the reaction solution, the method further comprises: and (5) cleaning the equipment. .
In some embodiments, before performing defect detection on the mask after etching but without removing the photoresist of the protective layer, the method further comprises: and exposing and developing the mask.
It should be noted that while the operations of the method of the present invention are depicted in the drawings in a particular order, this does not require or imply that the operations must be performed in this particular order, or that all of the illustrated operations must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions.
Further, referring to fig. 3, fig. 3 shows a reticle defect mark-free removal apparatus 300 according to an embodiment of the present application, which is applied to reticle defect removal, and includes:
the detection unit 310 is used for detecting defects of the mask plate which is etched but does not remove the protective layer photosensitive resist to obtain position information and size information of a plurality of defects on the mask plate;
the determining unit 320 is configured to determine a first pulse frequency according to the position information and the size information of each defect, and when the size information is greater than 100um, select the energy emitted by the first pulse frequency to be 5% -10% of preset energy;
the selecting unit 330 is configured to select a laser to be removed according to the first pulse frequency, where a second pulse frequency on the laser to be removed is 1 to 1.5 times of the first pulse frequency;
the removing unit 340 is used for performing fixed-point physical evaporation removal on the developed and solidified photosensitive resist on the defect surface by removing a needed laser;
the etching unit 350 is used for performing fixed-point chemical etching on the defects of the removed photoresist by using the diluted 1/3 etching solution, and recovering the reaction solution;
a contrast unit 360 for comparing the transmittance T of the size area A from which the defects of the photoresist have been removed1And transmittance T of blank area B2Wherein area A is equal to area B;
when T is1＜T2If so, repeating the steps 1) to 5) when T is reached1＝T2And then, the whole process is finished.
In the embodiment of the application, the method is applied to the mark-free removal of the defects of the mask, and the defects on the mask are removed without marks after a series of treatments. In the prior art, when defects are generated on a mask, the defects need to be repaired, and a common black defect repairing method comprises the following steps: the black defects are removed using a focused laser beam formed using a millisecond pulse laser or a nanosecond laser. When the pulse coherent light emitted by the laser is converged on the metal layer forming the black defect through a group of optical focusing systems, the metal layer is instantly heated and melted and evaporated due to the absorption of the energy carried by the laser beam, thereby realizing the 'removal' of the black defect. However, in practice, not only the physical reaction in which the metal layer is evaporated by the laser but also the chemical reaction in which the evaporated metal is re-deposited by heating with the laser exist in the process. Meanwhile, the surface of the glass substrate in the original black defect area is damaged due to the influence of the condensed laser beam. Both redeposition of metal and damage to the glass surface can reduce the optical transmittance and create optical retardation in this region, known as "laser marking" in the reticle industry.
In order to overcome the aurora impression generated in the prior art, the embodiment of the application provides a mask defect traceless removal device, the device determines a first pulse frequency through the defect size, then selects a laser for removing the required laser according to the first pulse frequency, adjusts and removes a second pulse frequency on the required laser at the moment, so that the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer of the non-metal material, then focuses the laser emitted by the laser for removing the required laser on the photosensitive adhesive layer of the non-metal material, and because the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer of the non-metal material, the emitted laser only removes the photosensitive adhesive and does not act on a defect metal layer and a glass substrate under the photosensitive adhesive, because the material is different from the metal layer, the photosensitive glue is evaporated after being acted by laser and can not be deposited continuously, and finally the defects of the removed photosensitive glue are etched at fixed points by the etching liquid, so that no mark influencing the light transmittance and phase difference of the substrate exists.
In order to better determine the first pulse frequency and avoid the first pulse frequency from being too much deviated from the actual value, please refer to fig. 4, and fig. 4 shows an exemplary structural block diagram of a reticle defect traceless removal apparatus 400 according to another embodiment of the present application.
As shown in fig. 4, the apparatus includes:
a calculation unit 410 for calculating a size area C of the defect;
the judging unit 420 is configured to select a first pulse frequency as a nanosecond pulse signal source when a ratio of the size area C of the defect to the preset reference size area D is greater than 0.5 and smaller than 1, adjust the nanosecond pulse signal source to emit high-frequency laser, and adjust the nanosecond pulse signal source to emit low-frequency laser when the ratio of the size area C of the defect to the preset reference size area D is smaller than 0.5;
when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, selecting a first pulse frequency as a picosecond pulse signal source, and adjusting the picosecond pulse signal source to emit high-frequency laser.
In the embodiment of the application, the area unit of the size area C of the defect is the same as that of the preset reference size area D, when the ratio of the size area C of the defect to the preset reference size area D is more than 0.5 and less than 1, the nanosecond pulse signal source is adjusted to emit high-frequency laser, and at the moment, the high-frequency laser emitted by the nanosecond pulse signal source is matched with the energy required by the photosensitive adhesive layer for removing the non-metallic material; when the ratio of the size area C of the defect to the preset reference size area D is less than 0.5, adjusting a nanosecond pulse signal source to emit low-frequency laser, wherein the low-frequency laser emitted by the nanosecond pulse signal source is matched with the energy required by the removal of the photosensitive adhesive layer of the non-metallic material; when the ratio of the size area C of the defect to the preset reference size area D is larger than 1, adjusting a picosecond pulse signal source to emit high-frequency laser, wherein the high-frequency laser emitted by the picosecond pulse signal source is matched with the energy required by removing the photosensitive adhesive layer of the non-metallic material;
the first pulse frequency is selected according to the ratio of the size area C of the defect to the preset reference size area D, then the laser device required for removing is selected by utilizing the first pulse frequency, at the moment, the second pulse frequency on the laser device required for removing is adjusted, so that the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer made of the non-metal material, then the laser emitted by the laser device required for removing is focused on the photosensitive adhesive layer made of the non-metal material, and because the energy emitted by the second pulse frequency is matched with the energy required for removing the photosensitive adhesive layer made of the non-metal material, the emitted laser only removes the photosensitive adhesive and does not act on the defect metal layer and the glass substrate under the photosensitive adhesive.
It should be understood that the units or modules described in the apparatus 300-400 correspond to the various steps in the method described with reference to fig. 1-2. Thus, the operations and features described above with respect to the method are equally applicable to the apparatus 300-400 and the units included therein and will not be described again here. The apparatus 300-400 may be implemented in a browser or other security applications of the electronic device in advance, or may be loaded into the browser or other security applications of the electronic device by downloading or the like. The corresponding units in the apparatus 300-400 can cooperate with units in the electronic device to implement the solution of the embodiment of the present application.
Referring now to FIG. 5, a block diagram of a computer system 500 suitable for use in implementing a terminal device or server of an embodiment of the present application is shown.
As shown in fig. 5, the computer system 500 includes a Central Processing Unit (CPU)501 that can perform various appropriate actions and processes according to a program stored in a Read Only Memory (ROM)502 or a program loaded from a storage section 508 into a Random Access Memory (RAM) 503. In the RAM 503, various programs and data necessary for the operation of the system 500 are also stored. The CPU 501, ROM 502, and RAM 503 are connected to each other via a bus 504. An input/output (I/O) interface 505 is also connected to bus 504.
The following components are connected to the I/O interface 505: an input portion 506 including a keyboard, a mouse, and the like; an output portion 507 including a display such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), and the like, and a speaker; a storage portion 508 including a hard disk and the like; and a communication section 509 including a network interface card such as a LAN card, a modem, or the like. The communication section 509 performs communication processing via a network such as the internet. The driver 510 is also connected to the I/O interface 505 as necessary. A removable medium 511 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 510 as necessary, so that a computer program read out therefrom is mounted into the storage section 508 as necessary.
In particular, the processes described above with reference to fig. 1-2 may be implemented as computer software programs, according to embodiments of the present disclosure. For example, embodiments of the present disclosure include a computer program product comprising a computer program tangibly embodied on a machine-readable medium, the computer program comprising program code for performing the method of fig. 1-2. In such an embodiment, the computer program may be downloaded and installed from a network through the communication section 509, and/or installed from the removable medium 511.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The units or modules described in the embodiments of the present application may be implemented by software or hardware. The described units or modules may also be provided in a processor, and may be described as: a processor includes a first sub-region generating unit, a second sub-region generating unit, and a display region generating unit. Where the names of these units or modules do not in some cases constitute a definition of the unit or module itself, for example, the display area generating unit may also be described as a "unit for generating a display area of text from the first sub-area and the second sub-area".
As another aspect, the present application also provides a computer-readable storage medium, which may be the computer-readable storage medium included in the foregoing device in the foregoing embodiment; or it may be a separate computer readable storage medium not incorporated into the device. The computer readable storage medium stores one or more programs for use by one or more processors in performing the text generation method applied to the transparent window envelope described in the present application.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the invention herein disclosed is not limited to the particular combination of features described above, but also encompasses other arrangements formed by any combination of the above features or their equivalents without departing from the spirit of the invention as defined above. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.