阅读说明：本技术 接合装置以及接合头的移动量补正方法 (Bonding apparatus and method for correcting movement amount of bonding head ) 是由 高桥诚 中村智宣 于 2020-04-14 设计创作，主要内容包括：接合装置进行：标记补正,在每个既定的时机利用位置检测照相机拍摄基准标记,基于所拍摄的基准标记的位置与位置检测照相机的基准位置的位置偏移量来补正接合头的移动量；以及实际位置补正,在每个自前一次实际位置补正开始的由标记补正所得的补正量的累计值超过既定的第一阈值的时机,利用位置检测照相机检测接合后的半导体元件的实际接合位置,基于所检测出的半导体元件的实际接合位置与目标接合位置的位置偏移量来补正接合头的移动量。(The bonding device performs: a mark correction for capturing an image of the reference mark by the position detection camera at every predetermined timing and correcting the movement amount of the bonding head based on the positional deviation amount between the captured position of the reference mark and the reference position of the position detection camera; and actual position correction, wherein the actual bonding position of the bonded semiconductor element is detected by the position detection camera at each timing when the integrated value of the correction amount obtained by the mark correction since the previous actual position correction exceeds a predetermined first threshold, and the movement amount of the bonding head is corrected based on the detected position deviation amount between the actual bonding position and the target bonding position of the semiconductor element.)

1. An engagement device, comprising:

a bonding head which is mounted with a bonding nozzle for bonding the semiconductor element adsorbed on the front end to the substrate or other semiconductor elements and a position detection camera and moves in at least one direction;

a fiducial marker; and

a control section for adjusting the position of the bonding head,

the control unit performs:

a mark correction unit that images the reference mark by the position detection camera every predetermined timing and corrects a movement amount of the bonding head based on a positional deviation amount between a position of the imaged reference mark and a reference position of the position detection camera; and

actual position correction for detecting an actual bonding position of the bonded semiconductor device by the position detection camera every time at another predetermined timing and correcting a movement amount of the bonding head based on a positional deviation amount between the detected actual bonding position and a target bonding position of the semiconductor device

The other predetermined timing is a timing at which the integrated value of the correction amounts obtained by the marker correction since the previous actual position correction exceeds a predetermined first threshold.

2. The joining device of claim 1,

the other predetermined timing is a timing when a difference between a correction amount corrected by the previous flag and a correction amount corrected by the present flag exceeds a predetermined second threshold.

3. A method for correcting a movement amount of a bonding head, comprising:

a preparation step of preparing a bonding apparatus including a bonding head that is mounted with a bonding nozzle for bonding a semiconductor element adsorbed on a tip onto a substrate or another semiconductor element, and a position detection camera, and moves in at least one direction;

a mark correction step of capturing an image of a reference mark by the position detection camera every predetermined timing and correcting a movement amount of the bonding head based on a positional deviation amount between a position of the captured reference mark and a reference position of the position detection camera; and

an actual position correcting step of detecting an actual bonding position of the bonded semiconductor device by the position detection camera every time at another predetermined timing and correcting a moving amount of the bonding head based on a positional deviation amount between the detected actual bonding position and a target bonding position of the semiconductor device

And executing the actual position correcting step when an integrated value of the correction amounts corrected by the mark correcting step after the actual position correcting step is executed last time exceeds a predetermined first threshold.

4. The method for correcting the amount of movement of the bonding head according to claim 3,

and executing the actual position correcting step when a difference between a correction amount of the mark correcting step executed at the previous time and a correction amount obtained by the mark correcting step executed at the current time exceeds a predetermined second threshold.

Technical Field

The present invention relates to a structure of a bonding apparatus and a method for correcting a movement amount of a bonding head attached to the bonding apparatus.

Background

In a part of a step of mounting a semiconductor element such as a semiconductor chip on a substrate such as a wiring board or a lead frame (lead frame) to assemble a package, there is a die bonding step of sucking the chip from a wafer and bonding the chip to the substrate. In the die bonding step, it is necessary to accurately bond the die to the bonding surface of the substrate. However, since the substrate surface is heated to a high temperature of about 80 to 250 ℃, the semiconductor element may not be bonded at an accurate position due to a positional shift of the structural member or the like caused by the high temperature or the radiant heat.

Thus, the following operations are performed: the thermal movement amount of the bonding head or the change in the amount of displacement (offset) between the bonding tool and the camera is detected using a reference member provided in the vicinity of the bonding stage as a reference point, and the bonding position is corrected (see, for example, patent documents 1 and 2).

In addition, the following operations are performed: after bonding a semiconductor chip to a substrate, the bonded semiconductor element and substrate are imaged and the actual bonding position is inspected for a positional displacement (see, for example, patent document 3).

Documents of the prior art

Patent document

Patent document 1: japanese patent No. 5277266

Patent document 2: japanese patent No. 6256486

Patent document 3: japanese patent laid-open No. 2004-

Disclosure of Invention

Problems to be solved by the invention

In actual bonding, the amount of positional deviation of the bonding position can be significantly reduced by performing actual position correction after bonding the semiconductor chip to the substrate, the actual position correction being performed by imaging the bonded semiconductor element and substrate, detecting the amount of positional deviation between the actual bonding position and the target bonding position, and correcting the next movement amount of the bonding head by the detected amount of positional deviation.

However, it takes too much time to perform the actual position correction every time the bonding is performed, and it is not practical.

Therefore, an object of the present invention is to improve the bonding quality while maintaining productivity by adjusting the timing of actual position correction.

Means for solving the problems

The present invention provides a joining device, comprising: a bonding head which is mounted with a bonding nozzle for bonding the semiconductor element adsorbed on the front end to the substrate or other semiconductor elements and a position detection camera and moves in at least one direction; a fiducial marker; and a control unit that adjusts a position of the bonding head, the control unit performing: a mark correction for capturing an image of the reference mark by the position detection camera at every predetermined timing and correcting the movement amount of the bonding head based on the positional deviation amount between the captured position of the reference mark and the reference position of the position detection camera; and actual position correction, detecting the actual bonding position of the bonded semiconductor element by the position detection camera at every other predetermined timing, and correcting the moving amount of the bonding head based on the position deviation amount between the detected actual bonding position of the semiconductor element and the target bonding position, wherein the other predetermined timing is a timing when the integrated value of the correction amounts obtained by the mark correction from the previous actual position correction exceeds a predetermined first threshold value.

In this way, the actual position correction is performed every timing when the integrated value of the correction amounts obtained by the mark correction since the previous actual position correction exceeds the predetermined first threshold, so that the timing of the actual position correction can be made appropriate, and the bonding quality can be improved while maintaining the productivity.

In the bonding apparatus according to the present invention, the other predetermined timing may be a timing at which a difference between a correction amount corrected by the previous flag and a correction amount corrected by the present flag exceeds a predetermined second threshold.

Thus, even when the actual joining position is suddenly shifted, the timing of the actual position correction is made appropriate, and the joining quality is improved while maintaining productivity.

The method for correcting the amount of movement of the bonding head according to the present invention includes: a preparation step of preparing a bonding apparatus including a bonding head and a reference mark, the bonding head being mounted with a bonding nozzle for bonding a semiconductor element adsorbed on a tip onto a substrate or another semiconductor element, and a position detection camera, and moving in at least one direction; a mark correction step of capturing an image of the reference mark by the position detection camera at every predetermined timing, and correcting a movement amount of the bonding head based on a positional displacement amount between a position of the captured reference mark and a reference position of the position detection camera; and an actual position correcting step of detecting an actual bonding position of the bonded semiconductor device by the position detection camera at every other predetermined timing, correcting a moving amount of the bonding head based on a positional deviation amount between the detected actual bonding position of the semiconductor device and the target bonding position, and executing the actual position correcting step when an integrated value of correction amounts corrected by the mark correcting step after executing the previous actual position correcting step exceeds a predetermined first threshold.

In this way, the actual position correction is performed every timing when the integrated value of the correction amounts obtained by the mark correction since the previous actual position correction exceeds the predetermined first threshold, so that the timing of the actual position correction can be made appropriate, the productivity can be maintained, and the bonding quality can be improved.

In the method for correcting the movement amount of the bonding head according to the present invention, the actual position correcting step may be executed when a difference between a correction amount of the mark correcting step executed at the previous time and a correction amount obtained by the mark correcting step executed at the present time exceeds a predetermined second threshold.

Thus, even when the actual joining position is suddenly shifted, the timing of the actual position correction is made appropriate, and the joining quality is improved while maintaining productivity.

ADVANTAGEOUS EFFECTS OF INVENTION

The present invention can make the correction of the actual position at a proper time, maintain the productivity and improve the bonding quality.

Drawings

Fig. 1 is a system diagram showing a system configuration of a joining device according to an embodiment.

Fig. 2 is a plan view of the engaging apparatus of the embodiment.

Fig. 3 is a flowchart showing the operation of the engagement device of the embodiment.

Fig. 4 is a diagram showing the position (a) of the bonding head and the field of view (b) of the position detection camera at the time of initialization of the bonding apparatus according to the embodiment.

Fig. 5 is a view showing a position (a) of the bonding head and a field of view (b) of the position detection camera in mark correction of the bonding apparatus according to the embodiment.

Fig. 6 is a view showing a field of view of a position detection camera for capturing images of a semiconductor device and a substrate bonded in the near vicinity at the time of actual position correction.

Fig. 7 is a graph (a) showing temporal changes in the total amount of positional deviation and the total correction amount when the bonding apparatus according to the embodiment is used for bonding, and a graph (b) showing temporal changes in the amount of positional deviation after correction.

Detailed Description

Hereinafter, the joining apparatus 100 according to the embodiment will be described with reference to the drawings. As shown in fig. 1 and 2, the joining apparatus 100 includes: a bonding head 11 on which a bonding nozzle 12 and a position detection camera 13 are mounted; a bonding stage 16 for adsorbing and fixing the substrate 30; and a marking table 18 on which a reference mark 19 is mounted. In the following description, the X direction and the Y direction are perpendicular to each other in a horizontal plane, and the Z direction is a vertical direction.

The bonding nozzle 12 sucks the semiconductor element 20 at the front end and bonds it on the substrate 30. The position detection camera 13 images the substrate 30 or the semiconductor element 20 to detect a bonding position or the like. The position detection camera 13 incorporates an image pickup Device using a Charge Coupled Device (CCD) Device or the like. The bonding head 11 is movably attached to a gantry frame (gantry frame)15 in the Y direction, and a Y-direction drive mechanism (not shown) is mounted inside. The gantry frame 15 is movably attached to a base, not shown, in the X direction, and an X direction drive mechanism, not shown, is mounted inside. Therefore, the bonding head 11 is configured to be movable in the XY direction with respect to the bonding stage 16. The gantry frame 15 may not move in the X direction, and the substrate 30 on the bonding stage 16 may move in the X direction. At this time, the bonding head 11 moves in the Y direction as one direction.

The bonding stage 16 vacuum-adsorbs the substrate 30 on the upper surface. The bonding stage 16 includes a heater, not shown, therein to heat the substrate 30 to a temperature required for bonding. On both sides of the bonding stage 16, guide rails 17 for guiding the substrate 30 in the X direction are provided.

A marking table 18 is provided slightly away from the bonding table 16 toward the Y-direction negative side. The marking table 18 is mounted on a base, not shown, and has a reference mark 19 placed on an upper surface thereof. The reference mark 19 is a plate member having a cross mark on the surface.

The Y-direction driving unit of the bonding head 11 and the X-direction driving unit of the gantry 15 are connected to the control unit 50, and are operated by a command from the control unit 50. The control Unit 50 is a computer including a Central Processing Unit (CPU) and a memory therein, and operates the Y-direction driving Unit of the bonding head 11 and the X-direction driving Unit of the gantry 15 to adjust the position of the bonding head 11 in the XY direction.

The bonding nozzle 12 is connected to the control unit 50, and moves the tip in the Z direction by a command from the control unit 50, thereby bonding the semiconductor element 20 adsorbed on the tip to the substrate 30. The position detection camera 13 is connected to the control unit 50, and data of an image captured by the position detection camera 13 is input to the control unit 50. Control unit 50 adjusts the amount of movement of bonding head 11 based on image data input from position detection camera 13.

The operation of the joining device 100 configured as described above will be described with reference to fig. 3 to 7.

First, as shown in step S101 of fig. 3, control unit 50 initializes the movement amount of bonding head 11. As shown in fig. 4 (a), the controller 50 moves the bonding head 11 to a position where the optical axis 13z of the position detection camera 13 is above the reference mark 19 by the Y-direction driver of the bonding head 11 and the X-direction driver of the gantry 15. As shown in fig. 4 (b), the intersection of the cross of the reference mark 19 and the reference position 41 of the field of view 40 of the position detection camera 13 is made to coincide with each other. Here, the cross of the reference mark 19 extends along the center line 19X in the X direction and the center line 19Y in the Y direction, respectively, and a line extending in the Z direction through the intersection of the cross of the reference mark 19 is the center line 19Z in the Z direction of the reference mark 19. The reference position 41 is an intersection of the X-direction center line 13X and the Y-direction center line 13Y of the field of view 40.

Then, control unit 50 detects the difference between the actual position of bonding head 11 in the X direction and the Y direction at this time and the position command value in the X direction and the position command value in the Y direction output from control unit 50, and sets the difference as an initial correction value of the movement amount of bonding head 11. Further, the initial correction value may be zero.

Then, as shown in step S102 of fig. 3, the control unit 50 sucks the semiconductor element 20 at the tip of the bonding nozzle 12 by a pickup stage, not shown, moves the bonding head 11 to a predetermined position by the Y-direction driving unit of the bonding head 11 and the X-direction driving unit of the gate frame 15, lowers the bonding nozzle 12 toward the substrate 30, and bonds the semiconductor element 20 to the substrate 30 as shown in fig. 2.

Then, the control unit 50 determines whether or not the timing is a predetermined timing for performing the mark correction in step S103 in fig. 3. The determination may be made, for example, based on whether or not a predetermined time has elapsed after the start of the joining, or based on the number of times the joining has been performed. Here, the mark correction is an operation of correcting the movement amount of the bonding head 11 based on the amount of positional displacement between the position of the reference mark 19 and the reference position 41 of the position detection camera 13 in order to image the reference mark 19 by the position detection camera 13, as will be described below with reference to step S104 to step S107 of fig. 3.

If the control unit 50 determines no in step S103 of fig. 3, it returns to step S102 to continue the engagement. On the other hand, if yes in step S103 in fig. 3, the flow proceeds to step S104 in fig. 3, and the flag correction operation is performed.

As shown in step S104 of fig. 3, the control unit 50 moves the bonding head 11 so that the optical axis 13z of the position detection camera 13 is positioned at the center of the reference mark 19 by the Y-direction driving unit of the bonding head 11 and the X-direction driving unit of the gantry 15. After the predetermined number of times of bonding as shown by the broken line in fig. 5 (a), the gantry 15, the bonding head 11, and the like thermally expand, and even if the same position command value as that at the time of initialization is input, as shown in fig. 5 (b), the position of the optical axis 13z of the position detection camera 13 becomes a position shifted from the center position of the reference mark 19, the amount of positional shift in the X direction between the intersection of the reference position 41 of the field of view 40 of the position detection camera 13 and the cross of the reference mark 19 becomes Δ X1, and the amount of positional shift in the Y direction becomes Δ Y1.

As shown in step S105 in fig. 3, the control unit 50 captures an image of the reference mark 19 as shown in fig. 5 (b) by the position detection camera 13. Then, the image captured by the position detection camera 13 is analyzed to detect the amount of positional deviation Δ x1 and the amount of positional deviation Δ y 1. The detection may also be based on, for example, the number of pixels between the reference position 41 of the field of view 40 and the intersection of the cross of the reference mark 19. Then, the control unit 50 proceeds to step S108 of fig. 3, and corrects the movement amount of the bonding head 11 by the detected positional displacement amount Δ x1 and positional displacement amount Δ y 1. The operations of step S104 to step S107 in fig. 3 are flag correction operations.

After correcting the movement amount of the bonding head 11, the controller 50 proceeds to step S108 of fig. 3 to calculate the integrated values Σ Δ x1 and Σ Δ y1 of the respective positional shift amounts Δ x1 and Δ y1 and store them in the memory. Here, since each of the positional displacement amounts Δ x1 and Δ y1 is the same as the correction value at the time of marker correction, the integrated value Σ Δ x1 and the integrated value Σ Δ y1 are integrated values of correction amounts obtained by marker correction. Then, the process proceeds to step S109 in fig. 3, and it is determined whether or not the integrated values Σ Δ x1 and Σ Δ y1 exceed a predetermined first threshold value Δ S. If the determination at step S109 in fig. 3 is negative, the control unit 50 returns to step S102 in fig. 3 to continue the engagement, and repeats the operations at steps S104 to S107 in fig. 3 to perform the mark correction after the predetermined timing has been reached and the calculation of the integrated value Σ Δ x1 and the integrated value Σ Δ y1 shown at step S108 in fig. 3.

When any one of the accumulated values Σ Δ x1 and Σ Δ y1 of the positional shift amounts Δ x1 and Δ y1 exceeds the predetermined first threshold value Δ S in step S109 in fig. 3, the control unit 50 determines that it is another predetermined timing to perform the actual position correction, and performs the actual position correction as shown in step S110 to step S114 in fig. 3. The actual position correction is an operation of detecting the position of the center 25, which is the actual bonding position of the semiconductor device 20 after bonding, by the position detection camera 13, and correcting the movement amount of the bonding head 11 based on the positional deviation amount Δ x2 and the positional deviation amount Δ y2 between the detected position of the center 25 of the semiconductor device 20 and the position of the center 35 of the target bonding position 34.

In step S110 of fig. 3, the control unit 50 moves the bonding head 11 to the vicinity of the position where the bonding is performed forward by the Y-direction driving unit of the bonding head 11 and the X-direction driving unit of the gate frame 15, and the semiconductor element 20 and the substrate 30 in the vicinity thereof which are bonded forward enter the position in the field of view 40 of the position detection camera 13 as shown in fig. 6. Then, as shown in step S111 in fig. 3, the control unit 50 captures an image of the substrate 30 and the semiconductor element 20 bonded in front by the position detection camera 13, and acquires image data as shown in fig. 6. The acquired image data is input to the control section 50.

As shown in fig. 6, the mark 31 and the mark 32 are provided on the substrate 30 on the diagonal line of the target bonding position 34. The line connecting the marks 31, 32 passes through the center 35 of the target bonding position 34. Here, the center 35 is an intersection of the X-direction center line 30X and the Y-direction center line 30Y of the target joining position 34. In addition, the semiconductor element 20 is also provided with two marks 21 and 22 on diagonal lines. Similarly to the marks 31 and 32, the line connecting the marks 21 and 22 passes through the center 25 of the semiconductor element 20. The center 25 is an intersection of the center line 20X in the X direction and the center line 20Y in the Y direction of the semiconductor element 20.

In step S112 of fig. 3, the control unit 50 analyzes the image captured by the position detection camera 13 to detect the XY coordinates of the marks 31 and 32 of the substrate 30, and calculates the XY coordinates of the center 35 of the target bonding position 34 from the detected XY coordinates of the marks 31 and 32. Similarly, the XY coordinates of the center 25 of the semiconductor device 20 are calculated from the XY coordinates of the mark 21 and the mark 22 of the semiconductor device 20. Then, the X-direction and Y-direction positional displacement amounts Δ X2 and Δ Y2 of the center 25 and the center 35 of the target bonding position 34, which are the actual bonding position to which the semiconductor element 20 is actually bonded, are calculated from the XY coordinates of the center 35 of the target bonding position 34 and the XY coordinates of the center 35 of the target bonding position 34.

Then, the controller 50 proceeds to step S113 of fig. 3, and performs actual position correction for correcting the movement amount of the bonding head 11 by using the positional displacement amount Δ x2 and the positional displacement amount Δ y2 calculated in step S112 of fig. 3.

After the actual position is corrected in step S113 in fig. 3, the control unit 50 proceeds to step S114 in fig. 3, resets the integrated values Σ Δ x1 and Σ Δ y1 stored in the memory to zero, and proceeds to step S114 in fig. 3. That is, the control unit 50 resets and zeroes the integrated values Σ Δ x1 and Σ Δ y1, which are the integrated values of the correction amounts obtained by the marker correction from the previous actual position correction. Therefore, the control unit 50 executes steps S110 to S114 in fig. 3 each time the integrated value of the correction amounts obtained by the marker correction since the previous actual position correction reaches the predetermined first threshold Δ S.

In step S115 of fig. 3, the control unit 50 determines whether or not the bonding of the semiconductor elements 20 is performed at all the target bonding positions 34 and the bonding is completed. If the control unit 50 determines no in step S115 in fig. 3, the process returns to step S102 in fig. 3, and continues the joining while performing the mark correction and the actual position correction. On the other hand, if the control unit 50 determines yes in step S115 of fig. 3, it ends the engagement operation.

Next, referring to fig. 7, the temporal changes of the total positional deviation amount Δ yt, the total correction amount Δ At in the Y direction, and the corrected positional deviation amount Δ yr in the Y direction in the above-described operation of the mark correction in steps S102 to S107 shown in fig. 3, and the operation of the actual position correction in steps S109 to S114 shown in fig. 3 will be described. In the following description, the Y direction is described, but the same applies to the X direction.

In fig. 7 (a) and 7 (b), the timings at which the marker correction is performed are time t01, time t02, time t11, time t12, time t21, and time t22, and the timings at which the actual position correction is performed are time t1 and time t2, respectively. In fig. 7 (a), a solid line a represents a temporal change in the total positional displacement Δ yt between the actual position of the center of the joining nozzle 12 in the Y direction and the commanded position, a broken line b represents a change in the total positional displacement Δ Y2t in the Y direction of the optical axis 13z of the joining nozzle 12 and the position detection camera 13, and a dashed line c represents a temporal change in the total correction amount Δ At in the Y direction. Here, the total amount of positional displacement Δ yt between the actual position in the Y direction of the center of the joining nozzle 12 and the commanded position is the total amount of positional displacement Δ Y1t between the position commanded value of the position of the joining head 11 and the actual position of the joining head 11, and the total amount of positional displacement Δ Y2t due to the change in the distance between the optical axis 13z of the position detection camera 13 and the center position of the joining nozzle 12 in the Y direction. Here, the total position displacement amount Δ yt1, the total position displacement amount Δ yt2, and the total correction amount Δ At are the integrated values of the position displacement amounts from the initialization state.

In fig. 7 (b), a solid line d indicates a temporal change in the corrected positional deviation amount Δ yr in the Y direction between the actual position of the center of the joining nozzle 12 in the Y direction and the commanded position, and a two-dot chain line e indicates a change in the corrected positional deviation amount Δ yr2 in the Y direction between the joining nozzle 12 and the optical axis 13z of the position detection camera 13. Here, the corrected positional displacement amount Δ yr in the Y direction between the actual position in the Y direction of the center of the bonding nozzle 12 and the commanded position is the sum of the positional displacement amount Δ yr1 between the position of the position commanded value of the bonding head 11 and the actual position of the bonding head 11 and the positional displacement amount Δ yr2 due to the change in the distance between the optical axis 13z of the position detection camera 13 and the center position of the bonding nozzle 12 in the Y direction. Here, the corrected position deviation amounts Δ yr, Δ yr1, Δ yr2 are the integrated values of the position friction amounts after the previous marker correction or the previous actual position correction.

At time 0 shown in fig. 7 (a), control unit 50 initializes the movement amount of bonding head 11 described with reference to step S101 of fig. 3 and fig. 4. Therefore, at time 0, the total position offset amount Δ yt becomes zero. The total correction amount Δ At and the corrected position deviation amount Δ yr are also zero.

When the joining is started from time 0 as shown in step S102 in fig. 3, the thermal expansion of each portion is started by the influence of heat of the heating heater of the joining table 16 and the like. This causes a positional deviation between the position of the position command value of bonding head 11 and the actual position of bonding head 11. In addition, the bonding head 11 itself is also thermally expanded, causing a change in the distance between the optical axis 13z of the position detection camera 13 and the center position of the bonding nozzle 12 in the Y direction. Therefore, a positional deviation occurs between the actual position in the Y direction of the center of the engagement nozzle 12 and the commanded position.

When the engagement is started, the total position displacement amount Δ yt gradually increases with time as shown by a solid line a in fig. 7 (a). Further, the total position offset amount Δ yt2 of the total position offset amount Δ yt is also gradually increased with time as shown by the broken line b in fig. 7 (a).

Then, at time t01, which is a predetermined timing for performing the flag correction, the control unit 50 performs the flag correction as shown in steps S104 to S107 in fig. 3 and fig. 5. In the mark correction at time t01, the controller 50 detects the positional shift amount Δ Y1 of Δ Y11 as indicated by the one-dot chain line c in fig. 7 (a), and corrects the Y-direction movement amount of the bonding head 11 based on the detected Δ Y11. Accordingly, the position offset amount Δ y1 is corrected, and the corrected position offset amount Δ yr decreases from Δ yr shown by the solid line d in fig. 7 (b) (Δ yr1+ Δ yr2) to Δ yr2 shown by the dashed-two dotted line e. Then, the total correction amount Ar at time t01 becomes Δ y 11. Further, the integrated value Σ Δ y1 of the correction amount from the previous actual position correction becomes Δ y 11. At this point in time, since the integrated value Σ Δ y1 does not exceed the first threshold value Δ S shown in fig. 7 (a), the control unit 50 determines no in step S109 in fig. 3, and returns to step S102 in fig. 3 to continue the engagement and flag correction.

When the bonding is continued after time t01, the total amount of positional deviation Δ yt and the total amount of positional deviation Δ yt2 increase due to thermal expansion as shown by the solid line a and the broken line b in fig. 7 (a). As shown by the solid line d and the dashed-two dotted line e in fig. 7 (b), the corrected positional displacement amount Δ yr and the positional displacement amount Δ yr2 also increase.

When the timing t02 at which the next predetermined timing for the mark correction is reached, the controller 50 performs the mark correction in the same manner as the timing t01, detects a positional shift amount Δ Y1 of Δ Y12, and corrects the movement amount of the bonding head 11 in the Y direction by the positional shift amount Δ Y1, as shown in fig. 7 (a). At time t02, the corrected position displacement amount Δ yr decreases from Δ yr (Δ yr1+ Δ yr2) indicated by the solid line d in fig. 7 (b) to Δ yr2 indicated by the dashed-two dotted line e. Then, the total correction amount Δ Ar at time t02 becomes Δ y11+ Δ y 12. At time t02, since the integrated value Σ Δ y1 of the correction amount since the previous actual position correction does not exceed Δ y11+ Δ y12 by the first threshold Δ S shown in fig. 7 (a), the control unit 50 determines no in step S109 in fig. 3, and returns to step S102 in fig. 3 to continue the joining and mark correction.

Similarly, the controller 50 performs the mark correction at time t1, detects the positional shift amount Δ Y1 of Δ Y13, and corrects the Y-direction movement amount of the bonding head 11 by the positional shift amount Δ Y1, as shown in fig. 7 (a). The total correction amount Ar at time t1 becomes Δ y11+ Δ y12+ Δ y 13. At time t1, since the integrated value Σ Δ y1 of the correction amount since the previous actual position correction exceeds the predetermined first threshold value Δ S shown in fig. 7 (a) by Δ y11+ Δ y12+ Δ y13, the control unit 50 determines yes at step S109 in fig. 3 and executes the actual position correction shown in steps S110 to S114 in fig. 3.

As described above with reference to fig. 6, the control unit 50 detects the position of the center 25, which is the actual bonding position of the semiconductor device 20 after bonding, by the position detection camera 13, and detects the position deviation Δ y2 between the detected position of the center 25 of the semiconductor device 20 and the position of the center 35 of the target bonding position 34. At time t1, the controller 50 detects Δ y21 shown in fig. 7 (a) as the positional displacement amount Δ y 2. Then, the controller 50 corrects the movement amount of the bonding head 11 in the Y direction by Δ Y21.

As a result, the position deviation amount Δ y2 that has not been corrected is corrected, and the corrected position deviation amount Δ yr at time t1 becomes zero from Δ yr2 indicated by the two-dot chain line e in fig. 7 (b). Therefore, at time t1, the positional displacement amount between the actual position in the Y direction of the center of the joining nozzle 12 and the commanded position becomes zero.

After correcting the movement amount of the bonding head 11 in the Y direction in step S113 in fig. 3, the control unit 50 proceeds to step S114 in fig. 3 to reset and zero the integrated value Σ Δ Y1, which is the integrated value of the correction amount obtained by the marker correction from the previous actual position correction. If the bonding is not completed, the process returns to step S102 in fig. 3 to continue the bonding while performing the mark correction and the actual position correction.

At time t11, time t12, and time t2, the marker correction is performed in the same manner as described above, and at time t2 at which the integrated value Σ Δ y1 of the correction amounts obtained by the marker correction from the previous actual position correction exceeds the predetermined first threshold Δ s, the actual position correction is performed. In this manner, the bonding apparatus 100 according to the embodiment performs bonding gradually while performing the mark correction and the actual position correction.

As described above, the joining apparatus 100 according to the embodiment performs the actual position correction at each timing when the integrated value Σ Δ y1 of the correction amount obtained by the mark correction from the previous actual position correction exceeds the predetermined first threshold Δ s, so that the timing of the actual position correction can be made appropriate, and the joining quality can be improved while maintaining the productivity.

In the above description, the actual position correction is described as follows: the actual position correction is performed at each timing when the integrated value Σ Δ y1 of the correction amount obtained by the mark correction since the previous actual position correction exceeds the predetermined first threshold value Δ s, but the present invention is not limited thereto. For example, the actual position correction may be performed every timing when the difference between the correction amount obtained by the marker correction performed last time and the correction amount obtained by the marker correction performed this time exceeds the predetermined second threshold Δ s 2.

Thus, even when the actual joining position is suddenly shifted, the timing of correcting the actual position is made appropriate, and the joining quality is improved while maintaining productivity.

When the joining is performed while correcting the movement amount of the joining head 11 using the joining apparatus 100 described above, the step of bringing the joining apparatus 100 into an operable state as shown in fig. 1 and 2 constitutes a preparatory step of the movement amount correction method, the step of performing the operation of the mark correction at every predetermined timing as in steps S103 to S107 of fig. 3 constitutes a mark correction step of the movement amount correction method, and the step of performing the actual position correction each time the integrated value Σ Δ y1 of the correction amount of the mark correction exceeds the predetermined first threshold Δ S as in steps S109 to S114 of fig. 3 constitutes an actual position correction step of the movement amount correction method.

In the embodiment, the bonding apparatus 100 has been described as a bonding apparatus for bonding the semiconductor element 20 on the substrate 30, but the bonding apparatus is not limited to this, and may be a bonding apparatus for bonding the semiconductor element 20 on the substrate 30 and bonding another semiconductor element 20 on the semiconductor element 20. Further, although the description has been given of the image of the vicinity of the semiconductor device 20 bonded immediately before the actual position correction, the image of the vicinity of the semiconductor device 20 may be bonded immediately before the timing when the integrated value Σ Δ y1 of the correction amount for the mark correction exceeds the predetermined first threshold Δ s.

Description of the symbols

11: joint head

12: joint nozzle

13: position detecting camera

13x to 13z, 19x to 19z, 20x, 20y, 30x, 30 y: center line

15: door type frame

16: joint table

17: guide rail

18: marking table

19: fiducial marker

20: semiconductor device with a plurality of semiconductor chips

21. 22, 31, 32: marking

25. 35: center of a ship

30: substrate

34: target joint position

40: field of view

41: reference position

50: control unit

100: and a joining device.