阅读说明：本技术 包含生物相容性聚合物纳米颗粒的存储装置及其制造方法 (Memory device comprising biocompatible polymer nanoparticles and method of manufacturing the same ) 是由 李贤浩 姜元圭 丁献上 于 2019-10-04 设计创作，主要内容包括：本发明涉及包含生物相容性聚合物纳米颗粒的存储装置以及其制造方法。本发明可以提供存储装置,当应用于生物相容性电子装置时,所述存储装置可以更有效地集成在有机半导体领域中,并且可以通过用硅烷偶联剂处理而具有优异的电容。此外,根据本发明的制造存储装置的方法使用溶液方法,使得可以通过非常简单的方法制造存储装置。(The present invention relates to a memory device comprising biocompatible polymer nanoparticles and a method of manufacturing the same. The present invention can provide a memory device which can be more efficiently integrated in the field of organic semiconductors when applied to biocompatible electronic devices and can have excellent capacitance by treatment with a silane coupling agent. Further, the method of manufacturing a memory device according to the present invention uses a solution method, so that a memory device can be manufactured by a very simple method.)

1. A storage device, comprising:

comprising silicon dioxide (SiO)₂) A silicon layer of (a);

a charge/discharge layer;

an organic semiconductor layer; and

an electrode layer is formed on the substrate,

wherein the charge/discharge layer has a structure in which nanoparticles of a biodegradable polymer are dispersed in a silane matrix.

2. The memory device of claim 1, wherein the silane matrix has an average thickness of 5nm or less.

3. The memory device of claim 1, wherein the silane matrix comprises (3-glycidoxypropyl) trimethoxysilane.

4. The storage device of claim 1, wherein the nanoparticles of the biodegradable polymer have an average diameter of 50nm or less.

5. The storage device of claim 1, wherein the biodegradable polymer is any one of poly-L-arginine, polyhistidine, polytryptophan, and poly-L-lysine.

6. The memory device of claim 1, wherein the organic semiconductor layer comprises one or more of pentacene, poly (3, 4-ethylenedioxythiophene), poly (thiopheneacetylene), and oligothiophene.

7. A biocompatible electronic device comprising the storage device of any one of claims 1 to 6.

8. A method of manufacturing a memory device, comprising:

in the presence of silicon dioxide (SiO)₂) A step of forming a charge/discharge layer in which biodegradable polymer nanoparticles are dispersed in a silane matrix on the silicon layer of (a); and

a step of forming an organic semiconductor layer and an electrode layer on the charge/discharge layer.

9. According to claimThe method of claim 8, wherein the coating comprises silicon dioxide (SiO)₂) The step of forming a charge/discharge layer in which biodegradable polymer nanoparticles are dispersed in a silane matrix on the silicon layer of (a) includes:

functionalization of silica-containing (SiO) by treatment with UV-ozone or alkali₂) The silicon layer of (a) is used in combination with a silane coupling agent; and

applying a biodegradable polymer nanoparticle solution to the silane matrix.

Technical Field

The present invention relates to a storage device comprising nanoparticles of a biodegradable polymer and a method for manufacturing the same.

Background

In recent years, research and development of a method of manufacturing a memory device using a biomaterial has been performed, and in particular, a charge/discharge layer has been actively researched to enhance the capacitance of the memory device.

Conventionally, charge/discharge charge layers have been studied using metal nanoparticles, but there is a lack of research on memory devices made of biocompatible materials.

In addition, the metal deposition process is performed by physical deposition (e.g., vacuum heat deposition and sputtering), chemical deposition, which is difficult and complicated and requires an additional process, thereby requiring expensive equipment.

Therefore, there is an urgent need to research and develop a memory device made of a biocompatible material, which is effectively applicable to an electronic device by solving the above-mentioned problems and enhancing capacitance.

[ Prior art documents ]

(patent document 1) Korean patent laid-open publication No. 2013-0104820

Disclosure of Invention

[ problem ] to

The present invention relates to providing a storage device comprising biodegradable polymer nanoparticles, which is suitable for use in biocompatible electronic devices.

The present invention also relates to providing a method of manufacturing a storage device comprising biodegradable polymer nanoparticles by a simple solution method rather than a conventional complicated method.

[ solution ]

One aspect of the invention providesA storage device, the storage device comprising: comprising silicon dioxide (SiO)₂) A silicon layer of (a); a charge/discharge layer; an organic semiconductor layer; and an electrode layer, wherein the charge/discharge layer has a structure in which biodegradable polymer nanoparticles are dispersed in a silane matrix.

Another aspect of the present invention provides a biocompatible electronic device comprising the above-described storage device.

Yet another aspect of the present invention provides a method of manufacturing a memory device, the method comprising the steps of: in the presence of silicon dioxide (SiO)₂) Forming a charge/discharge layer in which biodegradable polymer nanoparticles are dispersed in a silane matrix on the silicon layer of (a); and forming an organic semiconductor layer and an electrode layer on the charge/discharge layer.

[ advantageous effects ]

When applied to a biocompatible electronic device, the memory device according to the present invention can be more efficiently integrated in the semiconductor field and can have excellent capacitance by including a silane matrix formed by treatment with a silane coupling agent.

Further, the method of manufacturing a memory device according to the present invention uses a solution method, so that a memory device can be manufactured by a very simple method.

Drawings

FIG. 1 is a diagram of a memory device of the present invention.

Fig. 2 is a diagram of a silicon layer containing silicon dioxide as one of components constituting the memory device of the present invention.

Fig. 3 is a diagram of a charge/discharge layer as one of components constituting the memory device of the present invention.

Fig. 4 is a diagram of a method of manufacturing a memory device according to an embodiment of the present invention.

Fig. 5 illustrates a result of measuring capacitance-voltage (hereinafter, simply referred to as "C-V") of the memory device according to the embodiment.

[ list of reference numerals ]

100: storage device

10: comprising silicon dioxide (SiO)₂) Silicon layer of (2), 11: silicon substrate, 12: silicon dioxide layer

20: charge/discharge layer, 21: silane matrix, 22: biodegradable polymer nanoparticles

30: organic semiconductor layer

40: electrode layer

Detailed Description

The invention is capable of many changes and modifications and has several forms. Therefore, it is to be understood that the specific embodiments of the present invention are illustrated in the drawings and described in detail in the detailed description.

It should be understood, however, that the invention is not intended to be limited to the particular forms set forth herein, and is intended to cover all modifications, equivalents, and alternatives falling within the technical scope and spirit of the invention.

It will be further understood that the terms "comprises," "comprising," "includes," "including," "has," "having" and/or "having," when used herein, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Also, the drawings attached hereto should be understood to be enlarged or reduced for convenience of description.

Hereinafter, the present invention will be described in detail.

Storage device

FIG. 1 is a diagram of a memory device of the present invention. Referring to FIG. 1, a memory device 100 of the present invention comprises a silicon dioxide (SiO) containing layer₂) The silicon layer 10, the charge/discharge layer 20, the organic semiconductor layer 30, and the electrode layer 40.

Fig. 2 is a diagram of a silicon layer containing silicon dioxide as one of components constituting the memory device of the present invention. Referring to fig. 2, a silicon layer 10 comprising silicon dioxide includes a silicon substrate 11 and a silicon dioxide layer 12 deposited on the silicon substrate 11.

In this case, although not particularly limited thereto, the silicon substrate 11 may be a p-type silicon substrate.

The silicon dioxide layer 12 may have an average thickness of 300nm or less, specifically, 5nm to 300nm, 10nm to 100nm, or 10nm to 30 nm.

The deposition of the silicon dioxide layer 12 on the silicon substrate 11 allows the silicon layer 10 to be functionalized with hydroxyl groups, and the functionalization with hydroxyl groups by treatment with UV-ozone or alkali allows the silicon layer 10 to be combined with a silane coupling agent.

Fig. 3 is a diagram of a charge/discharge layer as one of components constituting the memory device of the present invention. Referring to fig. 3, the charge/discharge layer 20 has a structure in which biodegradable polymer nanoparticles 22 are dispersed in a silane matrix 21. In the present specification, the term "charge" means increasing the amount of stored charge by allowing current to enter a secondary battery or secondary battery from the outside; the term "discharge" means, as opposed to charging, reducing the amount of stored charge by draining current from the battery or secondary cell; and the term "charge/discharge layer" means a layer having a charge that can be charged/discharged.

The silane substrate 21 may have an average thickness of 5nm or less, specifically, 0.1nm to 5 nm.

The silane base 21 contains a silane coupling agent. Specifically, although not particularly limited thereto, the silane coupling agent may be (3-glycidyloxypropyl) trimethoxysilane (hereinafter, simply referred to as "GPTMS").

When the memory device 100 of the present invention includes the silane substrate 21, the memory effect can be increased when a higher voltage is applied, and the stability of the memory device can be ensured.

In the present specification, the term "biodegradable polymer" means a polymer that is converted into a low molecular weight compound by metabolism of an organism including at least one decomposition process, the term "nanoparticle" means a particle having at least one dimension of 100nm (i.e., less than ten million decimeters), and the term "biodegradable polymer nanoparticle" means a particle having a diameter of 100nm or less and composed of a polymer that is converted into a low molecular weight compound by metabolism.

Specifically, the biodegradable polymer nanoparticles 22 formed by the reaction between the epoxy groups of the silane coupling agent and the amine groups contained in the biodegradable polymer are dispersed in the silane matrix, wherein the biodegradable polymer nanoparticles 22 may have an average diameter of 50nm or less, specifically, 1nm to 50 nm. The average diameter of the biodegradable polymer nanoparticles 22 can be measured by a laser diffraction method known as a conventional method.

When the memory device 100 of the present invention includes the biodegradable polymer nanoparticles 22, the memory device 100 may be suitable for use in a biocompatible electronic device.

The biodegradable polymer is not particularly limited as long as it contains an amino acid having one or more amine groups, and may be specifically any one of poly-L-arginine, polyhistidine, polytryptophan, and poly-L-lysine. In the present specification, the term "poly-L-arginine" refers to a positively charged synthetic polyamino acid having one HCl per arginine unit.

In the present specification, the term "organic semiconductor" refers to a semiconductor made of a carbon material. Most organic compounds are insulators, and an organic semiconductor generally refers to an extrinsic semiconductor, which is an organic material crystal obtained when a molecular compound is prepared by incorporating a material that easily donates electrons upon electrolytic dissociation and a material that easily accepts electrons.

The organic semiconductor layer 30 is not particularly limited as long as it is suitable for a memory device. In particular, the organic semiconductor layer may comprise one or more of pentacene, poly (3, 4-ethylenedioxythiophene), poly (thiopheneacetylene) and oligothiophene, in particular pentacene consisting of 22 pi-bonds.

The organic semiconductor layer 30 may have an average thickness of 100nm or less, particularly 10nm to 100 nm. Specifically, the organic semiconductor layer 30 may have an average thickness of 10nm to 50 nm.

The electrode layer 40 is not particularly limited as long as it is suitable for a memory device and may be, specifically, a gold (Au) electrode layer. In this case, the Au electrode layer may include Au dots having an average diameter of 100 to 500 μm, and may have an average thickness of 10 to 200 nm.

Biocompatible electronic device

Another aspect of the present invention provides a biocompatible electronic device comprising the above-described storage device.

The structure and components of the biocompatible electronic device are well known to those skilled in the art, and thus a detailed description thereof will be omitted herein.

The contents of the structure and components of biocompatible electronic devices known to those skilled in the art are incorporated into the contents of the present invention.

Method of manufacturing memory device

Yet another aspect of the present invention provides a method of manufacturing a memory device, the method comprising the steps of: in the presence of silicon dioxide (SiO)₂) Forming a charge/discharge layer in which biodegradable polymer nanoparticles are dispersed in a silane matrix on the silicon layer of (a); and forming an organic semiconductor layer and an electrode layer on the charge/discharge layer.

Specifically, fig. 4 is a diagram of a method of manufacturing a memory device according to an embodiment of the present invention. Referring to fig. 4, silicon dioxide (SiO) has been deposited thereon₂) The silicon substrate 11 of the layer 12 is treated with UV-ozone or alkali to functionalize the surface of the silicon dioxide layer with hydroxyl groups (-OH) (process S1). In this case, the silicon substrate 11 may be a p-type silicon substrate, and the silicon dioxide layer 12 may have a thickness of 10nm to 300nm, specifically 300nm or less, and more specifically 5nm to 300nm, 10nm to 100nm, or 10nm to 30 nm. Although not particularly limited thereto, the base for functionalizing the surface of the silica layer 12 with hydroxyl groups is preferably sodium hydroxide (NaOH).

The silicon layer 10, which has been functionalized with hydroxyl groups, is treated with a silane coupling agent so that the hydroxyl groups and the silane coupling agent are combined to form the silane matrix 21 (process S2). In this case, although not particularly limited thereto, the silane coupling agent may be GPTMS. The silane matrix 21 may have an average thickness of 5nm or less, specifically 0.1nm to 5 nm. When the memory device 100 of the present invention includes the silane substrate 21, the memory effect can be increased when a higher voltage is applied, and the stability of the memory device can be ensured.

Subsequently, the epoxy groups contained in the silane matrix 21 react with the amine groups contained in the biodegradable polymer to disperse the biodegradable polymer nanoparticles 22 on the silane matrix 21, wherein the biodegradable polymer nanoparticles are prepared by a solution method (process S3). In this case, the biodegradable polymer may be poly-L-arginine, and the biodegradable polymer nanoparticles 22 may have an average diameter of 50nm or less, specifically 1nm to 50 nm. When the memory device 100 of the present invention includes the biodegradable polymer nanoparticles 22, the memory device 100 may be suitable for use in a biocompatible electronic device.

Then, the organic semiconductor layer 30 and the electrode layer 40 are formed on the biodegradable polymer nanoparticles 22 while depositing by thermal evaporation (processes S4 and S5). In this case, the organic semiconductor layer 30 is not particularly limited as long as it is suitable for a memory device and may specifically contain one or more of pentacene, poly (3, 4-ethylenedioxythiophene), poly (thiopheneacetylene) and oligothiophene, particularly pentacene consisting of 22 pi-bonds.

The organic semiconductor layer 30 may have an average thickness of 100nm or less, preferably 10nm to 100 nm. Specifically, the organic semiconductor layer 30 may have an average thickness of 10nm to 50 nm.

The electrode layer 40 is not particularly limited as long as it is suitable for a memory device and may be, specifically, a gold (Au) electrode layer. In this case, the Au electrode layer may include Au dots having an average diameter of 100 to 500 μm, and may have an average thickness of 10 to 200 nm.

Hereinafter, a storage device including biodegradable polymer nanoparticles and a method of manufacturing the same according to the present invention will be described in more detail according to examples and experimental examples.

However, it should be understood that the following examples and experimental examples presented herein are given only for the purpose of illustrating a storage device including biodegradable polymer nanoparticles according to the present invention and a method of manufacturing the same, and are not intended to limit the scope of the present invention.

Example manufacturing a memory device

On which a 10nm thick silicon dioxide layer (SiO) was deposited₂) P-type silicon substrate (size: 1.5cm × 3.0cm, thickness: 0.6T) was treated with UV-ozone to allow the surface of the silica layer to be functionalized with hydroxyl groups.

Subsequently, the obtained silicon layer was impregnated with a GPTMS solution (5% ethanol solution) so that the hydroxyl groups and GPTMS reacted to form a silane matrix (thickness of the silane matrix: about 0.1nm to 5 nm).

To disperse poly-L-arginine (Mw: 1700Da) on the surface of the silane substrate, dip coating was gently performed for 1 hour. poly-L-arginine was added to a final concentration of 2mg/ml (1mM), followed by dip coating for 1 hour to form poly-L-arginine nanoparticles (diameter: 1nm to 50nm) on the GPTMS layer (solution method).

Subsequently, a pentacene semiconductor layer (thickness: 50nm to 80nm) and an Au electrode (diameter of Au dot: 500 μm, thickness of Au electrode: 150nm to 200nm) were deposited via thermal evaporation to fabricate a memory device.

Experimental example 1 analysis of C-V characteristics

The C-V performance of the storage device according to the embodiment was measured at a frequency of 1MHz using HP Agilent 4284A, and the results thereof are shown in fig. 5.

Specifically, assuming that the silicon wafer is ground, the change in capacitance was confirmed while applying a voltage to the Au electrode. In this case, the capacitances were checked while sweeping voltages of ± 3V, ± 5V and ± 7V by increasing the voltages by ± 2V from 3V and-3V.

As a result, it can be seen that a certain scan lag is formed. When a higher voltage is applied, the memory effect increases.