阅读说明：本技术 半导体存储器装置以及操作该半导体存储器装置的方法 (Semiconductor memory device and method of operating the same ) 是由 李宗勋 于 2021-02-19 设计创作，主要内容包括：本申请公开了半导体存储器装置以及操作该半导体存储器装置的方法。一种半导体存储器装置包括存储器单元阵列、外围电路、电流感测电路和控制逻辑。存储器单元阵列包括多个存储器单元。外围电路对所述多个存储器单元当中的连接到所选字线的所选存储器单元执行编程操作。电流感测电路通过对所选存储器单元执行电流感测操作来生成通过信号或失败信号。控制逻辑接收通过信号或失败信号并且控制外围电路和电流感测电路的操作。控制逻辑控制电流感测电路和外围电路基于所选存储器单元的编程进度状态来执行电流感测操作和将编程脉冲施加到所选字线的操作。(The application discloses a semiconductor memory device and a method of operating the same. A semiconductor memory device includes a memory cell array, peripheral circuits, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation on a selected memory cell connected to a selected word line among the plurality of memory cells. The current sense circuit generates a pass signal or a fail signal by performing a current sense operation on the selected memory cell. The control logic receives the pass signal or the fail signal and controls the operation of the peripheral circuitry and the current sensing circuitry. The control logic controls the current sensing circuit and the peripheral circuit to perform a current sensing operation and an operation of applying a program pulse to the selected word line based on a program progress state of the selected memory cell.)

1. A semiconductor memory device, the semiconductor memory device comprising:

a memory cell array including a plurality of memory cells;

a peripheral circuit configured to perform a program operation on a selected memory cell connected to a selected word line among the plurality of memory cells;

a current sensing circuit configured to generate a pass signal or a fail signal by performing a current sensing operation on the selected memory cell; and

control logic configured to receive the pass signal or the fail signal and to control operation of the peripheral circuitry and the current sensing circuitry,

wherein the control logic controls the current sensing circuit and the peripheral circuit to perform the current sensing operation and the operation of applying a program pulse to the selected word line based on a program progress state of the selected memory cell.

2. The semiconductor memory device according to claim 1, wherein when the program progress state of the selected memory cell corresponds to a first state which is a start of the program operation, the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line.

3. The semiconductor memory device according to claim 2, wherein the selected memory cell is programmed to any one of a plurality of target program states, and

when the current sensing operation to be performed corresponds to any one of the remaining target program states except the last program state among the plurality of target program states, the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line.

4. The semiconductor memory device according to claim 2, wherein the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line when the number of program pulses applied to the selected word line is less than a predetermined threshold number.

5. The semiconductor memory device according to claim 2, wherein when the program progress state of the selected memory cell corresponds to a second state occurring after the first state, the control logic controls the current sensing circuit and the peripheral circuit to sequentially perform the current sensing operation and the operation of applying the program pulse to the selected word line.

6. The semiconductor memory device according to claim 5, wherein the selected memory cell is programmed to any one of a plurality of target program states, and

when the current sensing operation to be performed corresponds to a last program state among the plurality of target program states, the control logic controls the current sensing circuit to perform the current sensing operation and then controls the peripheral circuit to perform an operation of applying the program pulse to the selected word line.

7. The semiconductor memory device according to claim 5, wherein when the number of programming pulses applied to the selected word line is equal to or greater than a predetermined threshold number, the control logic controls the current sensing circuit to perform the current sensing operation and then controls the peripheral circuit to perform an operation of applying the programming pulses to the selected word line.

8. The semiconductor memory device according to claim 1, wherein the peripheral circuit comprises:

an address decoder configured to decode the selected word line among a plurality of word lines connected to the memory cell array and transfer a program voltage and a verify voltage to the selected word line; and

read and write circuitry connected to the memory cell array through a plurality of bit lines and configured to transmit a program enable voltage or a program inhibit voltage to each of the plurality of bit lines.

9. A method of operating a semiconductor memory device to program selected memory cells, the method comprising:

applying a program pulse to a selected word line connected to the selected memory cell;

applying a verify voltage to the selected word line; and

performing a current sensing operation and an operation of applying a programming pulse based on a programming progress state of the selected memory cell.

10. The method of claim 9, wherein the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress status of the selected memory cell comprises the steps of: performing the current sensing operation and the operation of applying the program pulse to the selected word line simultaneously when the program progress state of the selected memory cell corresponds to a first state that is a start of a program operation.

11. The method of claim 10, wherein the selected memory cell is programmed to any one of a plurality of target program states, and

the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress state of the selected memory cell includes the steps of:

checking a program state that passes verification among the plurality of target program states; and

when the current sensing operation to be performed corresponds to any one of the remaining target program states except the last program state among the plurality of target program states, the current sensing operation and the operation of applying the program pulse to the selected word line are simultaneously performed.

12. The method of claim 10, wherein the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress status of the selected memory cell comprises the steps of:

checking a number of program pulses applied to the selected word line; and

when the number of the program pulses is less than a predetermined threshold number, the current sensing operation and the operation of applying the program pulses to the selected word line are simultaneously performed.

13. The method of claim 10, wherein the step of simultaneously performing the current sensing operation and the operation of applying the programming pulse to the selected word line comprises the steps of:

performing the current sensing operation;

applying the programming pulse to the selected word line in a period that at least partially overlaps with a period in which the current sensing operation is performed; and

determining whether verification failed or passed as a result of the current sensing operation.

14. The method of claim 10, wherein the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress status of the selected memory cell comprises the steps of: performing the current sensing operation and the operation of applying the program pulse to the selected word line in sequence when the program progress state of the selected memory cell corresponds to a second state occurring after the first state.

15. The method of claim 14, wherein the selected memory cell is programmed to any one of a plurality of target program states, and

the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress state of the selected memory cell includes the steps of:

checking a program state that passes verification among the plurality of target program states; and

when the current sensing operation to be performed corresponds to a last program state among the plurality of target program states, the current sensing operation and the operation of applying the program pulse to the selected word line are sequentially performed.

16. The method of claim 14, wherein the step of performing the current sensing operation and the operation of applying the program pulse based on the program progress status of the selected memory cell comprises the steps of:

checking a number of program pulses applied to the selected word line; and

when the number of the program pulses is equal to or greater than a predetermined threshold number, the current sensing operation and the operation of applying the program pulses to the selected word line are sequentially performed.

17. The method of claim 14, wherein the step of sequentially performing the current sensing operation and the operation of applying the program pulse to the selected word line comprises the steps of:

performing the current sensing operation;

determining whether verification failed or passed as a result of the current sensing operation; and

when the verifying fails, the programming pulse is applied to the selected word line.

Technical Field

The present disclosure relates to electronic devices, and more particularly, to a semiconductor memory device and a method of operating the same.

Background

The memory device may be formed in a two-dimensional structure in which strings are horizontally arranged on a semiconductor substrate or a three-dimensional structure in which strings are vertically stacked on a semiconductor substrate. The three-dimensional memory device is a memory device designed to solve integration limitations of a two-dimensional memory device, and may include a plurality of memory cells vertically stacked on a semiconductor substrate.

Disclosure of Invention

A semiconductor memory device according to an embodiment of the present disclosure may include a memory cell array, peripheral circuits, a current sensing circuit, and control logic. The memory cell array may include a plurality of memory cells. The peripheral circuit may perform a program operation on a selected memory cell connected to a selected word line among the plurality of memory cells. The current sensing circuit may generate a pass signal or a fail signal by performing a current sensing operation on the selected memory cell. The control logic may receive the pass signal or the fail signal and control the operation of the peripheral circuitry and the current sensing circuitry. The control logic may control the current sensing circuit and the peripheral circuit to perform a current sensing operation and an operation of applying a program pulse to a selected word line based on a program progress state of a selected memory cell.

In accordance with a method of operating a semiconductor memory device according to another embodiment of the present disclosure, a selected memory cell is programmed. The method may comprise the steps of: applying a program pulse to a selected word line connected to a selected memory cell; applying a verify voltage to the selected word line; and performing a current sensing operation and an operation of applying a programming pulse based on the program progress state of the selected memory cell.

Drawings

Fig. 1 is a block diagram illustrating a semiconductor memory device according to an embodiment of the present disclosure.

Fig. 2 is a diagram illustrating an embodiment of the memory cell array of fig. 1.

Fig. 3 is a circuit diagram illustrating any one of the memory blocks BLK1 through BLKz of fig. 2.

Fig. 4 is a circuit diagram illustrating another embodiment of any one of the memory blocks BLK1 through BLKz of fig. 2.

Fig. 5 is a circuit diagram illustrating an embodiment of any one of the memory blocks BLK1 through BLKz included in the memory cell array 110 of fig. 1.

Fig. 6 is a diagram schematically illustrating a page buffer according to an example of an embodiment.

Fig. 7 is a block diagram illustrating a memory cell array, a read-write circuit, and a current sensing circuit of the semiconductor memory device.

FIG. 8 is a graph illustrating a target program state of a three level cell.

Fig. 9 is a diagram for describing a program operation according to an embodiment of the present disclosure.

Fig. 10 is a flowchart illustrating a programming method according to another embodiment of the present disclosure.

Fig. 11 is a flowchart illustrating an example of an implementation of step S150 of fig. 10.

Fig. 12 is a flowchart illustrating an embodiment of step S250.

Fig. 13 is a flowchart illustrating an embodiment of step S270.

Fig. 14 is a diagram illustrating a programming method described with reference to fig. 11 to 13.

Fig. 15 is a flowchart illustrating another embodiment of step S150 of fig. 10.

Fig. 16 is a diagram illustrating the programming method described with reference to fig. 15.

Fig. 17 is a block diagram illustrating an embodiment of a memory system including the semiconductor memory device of fig. 1.

Fig. 18 is a block diagram showing an application example of the memory system of fig. 17.

Fig. 19 is a block diagram illustrating a computing system including the memory system described with reference to fig. 18.

Detailed Description

Only the specific structural or functional descriptions of embodiments according to the concepts disclosed in the present specification or application are shown to describe embodiments according to the concepts disclosed in the present disclosure. Embodiments according to the disclosed concept can be implemented in various forms, and the description is not limited to the embodiments described in the present specification or application.

Embodiments of the present disclosure may provide a semiconductor memory device having improved programming speed and stability.

Another embodiment of the present disclosure may provide an operating method of a semiconductor memory device having improved program speed and stability.

Fig. 1 is a block diagram illustrating a semiconductor memory device according to an embodiment of the present disclosure.

Referring to fig. 1, the semiconductor memory device 100 includes a memory cell array 110, an address decoder 120, a read/write circuit 130, a control logic 140, a voltage generator 150, and a current sensing circuit 160. The control logic 140 may be implemented as hardware, software, or a combination of hardware and software. For example, the control logic 140 may be control logic circuitry that operates according to an algorithm and/or a processor that executes control logic code.

Memory cell array 110 includes a plurality of memory blocks BLK1 through BLKz. The plurality of memory blocks BLK1 through BLKz are connected to the address decoder 120 through word lines WL. The plurality of memory blocks BLK1 through BLKz are connected to the read/write circuit 130 through bit lines BL1 through BLm. Each of the plurality of memory blocks BLK1 through BLKz includes a plurality of memory cells. As an embodiment, the plurality of memory cells are nonvolatile memory cells, and may be configured of nonvolatile memory cells having a vertical channel structure. The memory cell array 110 may be configured as a two-dimensional structure of memory cell arrays. According to an embodiment, the memory cell array 110 may be configured as a three-dimensional structure memory cell array. In addition, each of the plurality of memory cells included in the memory cell array may store at least one bit of data. In an embodiment, each of the plurality of memory cells included in the memory cell array 110 may be a Single Level Cell (SLC) storing one bit of data. In another embodiment, each of the plurality of memory cells included in the memory cell array 110 may be a multi-level cell (MLC) storing two bits of data. In another embodiment, each of the plurality of memory cells included in the memory cell array 110 may be a tri-level cell storing three bits of data. In another embodiment, each of the plurality of memory cells included in the memory cell array 110 may be a four-level cell storing four bits of data. According to an embodiment, the memory cell array 110 may include a plurality of memory cells each storing five or more bits of data.

The address decoder 120 is connected to the memory cell array 110 through word lines WL. Address decoder 120 is configured to operate in response to control by control logic 140. The address decoder 120 receives an address through an input/output buffer (not shown) within the semiconductor memory device 100.

The address decoder 120 is configured to decode a block address among the received addresses. The address decoder 120 selects at least one memory block according to the decoded block address. In addition, the address decoder 120 applies the read voltage Vread generated in the voltage generator 150 to the selected word line of the selected memory block at the time of the read voltage applying operation during the read operation, and applies the pass voltage Vpass to the remaining unselected word lines. In addition, during a program verify operation, the address decoder 120 applies a verify voltage generated in the voltage generator 150 to a selected word line of a selected memory block and applies a pass voltage Vpass to remaining unselected word lines.

The address decoder 120 may be configured to decode a column address among the received addresses. The address decoder 120 sends the decoded column address to the read-write circuit 130.

The read operation and the program operation of the semiconductor memory device 100 are performed in units of pages. The addresses received when a read operation and a program operation are requested include a block address, a row address, and a column address. The address decoder 120 selects one memory block and one word line according to a block address and a row address. The column address is decoded by address decoder 120 and provided to read and write circuitry 130. In this specification, memory cells connected to one word line may be referred to as a "physical page".

The read-write circuit 130 includes a plurality of page buffers PB1 to PBm. The read and write circuit 130 may operate as a "read circuit" during a read operation of the memory cell array 110 and may operate as a "write circuit" during a write operation of the memory cell array 110. A plurality of page buffers PB1 through PBm are connected to the memory cell array 110 through bit lines BL1 through BLm. During the read operation and the program verify operation, in order to sense the threshold voltage of the memory cell, the plurality of page buffers PB1 to PBm sense a change in the amount of current flowing according to the program state of the corresponding memory cell through the sense node while continuously supplying a sense current to the bit line connected to the memory cell, and latch the sensed change as sense data. The read and write circuit 130 operates in response to the page buffer control signal output from the control logic 140. In this specification, a write operation of the write circuit may be used as the same meaning as a program operation on a selected memory cell.

During a read operation, the read-write circuit 130 senses DATA of the memory cells, temporarily stores the read DATA, and outputs the DATA to an input/output buffer (not shown) of the semiconductor memory device 100. As an example of the embodiment, the read and write circuit 130 may include a column selection circuit or the like in addition to the page buffer (or page register).

Control logic 140 is coupled to address decoder 120, read/write circuit 130, voltage generator 150, and current sense circuit 160. The control logic 140 receives a command CMD and a control signal CTRL through an input/output buffer (not shown) of the semiconductor memory device 100. The control logic 140 is configured to control the overall operation of the semiconductor memory device 100 in response to the control signal CTRL. In addition, the control logic 140 outputs a control signal for adjusting the sense node precharge potential level of the plurality of page buffers PB1 through PBm. The control logic 140 may control the read/write circuit 130 to perform a read operation of the memory cell array 110.

Further, in response to either PASS signal PASS or FAIL signal FAIL received from current sensing circuit 160, control logic 140 may determine whether the verify operation for a particular target program state passed or failed.

The voltage generator 150 generates a read voltage Vread and a pass voltage Vpass during a read operation in response to a control signal output from the control logic 140. To generate the plurality of voltages having various voltage levels, the voltage generator 150 may include a plurality of pumping capacitors that receive the internal power supply voltage and generate the plurality of voltages by selectively enabling the plurality of pumping capacitors in response to control by the control logic 140.

The current sensing circuit 160 may generate a reference current in response to the enable bit VRY _ BTI < # > received from the control logic 140 during the verification operation, and may output a PASS signal PASS or a FAIL signal FAIL by comparing a reference voltage generated by the reference current with the sensing voltage VPB received from the page buffers PB1 to PBm included in the read and write circuit 130.

For example, the current sensing circuit 160 may determine whether the verifying operation corresponding to a specific target program state is completed by comparing a voltage generated according to a value of a bit line sense latch included in each of the page buffers PB1 through PBm with a reference voltage generated by a reference current. The bit line sense latch included in each of the page buffers PB1 through PBm will be described later with reference to fig. 6.

The address decoder 120, the read-write circuit 130, and the voltage generator 150 may function as "peripheral circuits" that perform read, write, and erase operations on the memory cell array 110. The peripheral circuits perform read, write, and erase operations on the memory cell array 110 based on the control of the control logic 140.

Fig. 2 is a diagram illustrating an embodiment of the memory cell array of fig. 1.

Referring to fig. 2, the memory cell array 110 includes a plurality of memory blocks BLK1 through BLKz. Each memory block may have a three-dimensional structure. Each memory block includes a plurality of memory cells stacked on a substrate. Such a plurality of memory cells are arranged along the + X direction, + Y direction, and + Z direction. The structure of each memory block is described in more detail with reference to fig. 3 and 4.

Fig. 3 is a circuit diagram illustrating any one of the memory blocks BLK1 through BLKz of fig. 2.

Referring to fig. 3, the memory block BLKa includes a plurality of cell strings CS11 through CS1m and CS21 through CS2 m. As an embodiment, each of the plurality of cell strings CS11 to CS1m and CS21 to CS2m may be formed in a "U" shape. In the memory block BLKa, m cell strings are arranged in the row direction (i.e., + X direction). In fig. 3, two cell strings are arranged in the column direction (i.e., + Y direction). However, this is for convenience of description, and it is understood that three or more cell strings may be arranged in the column direction.

Each of the plurality of cell strings CS11 through CS1m and CS21 through CS2m includes at least one source select transistor SST, first through nth memory cells MC1 through MCn, a tube transistor PT, and at least one drain select transistor DST.

Each of the memory cells MC1 to MCn and the selection transistors SST and DST may have a similar structure. As an embodiment, each of the selection transistors SST and DST and the memory cells MC1 to MCn may include a channel layer, a tunneling insulating film, a charge storage film, and a blocking insulating film. As an embodiment, pillars for providing channel layers may be disposed in respective cell strings. As an embodiment, pillars for providing at least one of a channel layer, a tunnel insulating film, a charge storage film, and a barrier insulating film may be disposed in the respective cell strings.

The source selection transistors SST of the respective cell strings are connected between the common source line CSL and the memory cells MC1 to MCp.

As an embodiment, the source selection transistors of the cell strings arranged in the same row are connected to a source selection line extending in the row direction, and the source selection transistors of the cell strings arranged in different rows are connected to different source selection lines. In fig. 3, the source select transistors of the cell strings CS11 to CS1m of the first row are connected to a first source select line SSL 1. The source select transistors of the cell strings CS21 to CS2m of the second row are connected to a second source select line SSL 2.

As another embodiment, the source selection transistors of the cell strings CS11 to CS1m and CS21 to CS2m may be commonly connected to one source selection line.

The first to nth memory cells MC1 to MCn of the respective cell strings are connected between the source selection transistor SST and the drain selection transistor DST.

The first through nth memory cells MC1 through MCn may be divided into first through pth memory cells MC1 through MCp and (p +1) th through nth memory cells MCp +1 through MCn. The first to pth memory cells MC1 to MCp are sequentially arranged in a direction opposite to the + Z direction, and are connected in series between the source selection transistor SST and the tube transistor PT. The (p +1) th to nth memory cells MCp +1 to MCn are sequentially arranged in the + Z direction and are connected in series between the pipe transistor PT and the drain select transistor DST. The first to pth memory cells MC1 to MCp and the (p +1) th to nth memory cells MCp +1 to MCn are connected to each other through a pipe transistor PT. The gates of the first through nth memory cells MC1 through MCn of the respective cell strings are connected to the first through nth word lines WL1 through WLn, respectively.

The gate of the tube transistor PT of each cell string is connected to the line PL.

The drain select transistor DST of each cell string is connected between the corresponding bit line and the memory cells MCp +1 to MCn. The cell string arranged in the row direction is connected to a drain select line extending in the row direction. The drain select transistors of the cell strings CS11 to CS1m of the first row are connected to a first drain select line DSL 1. The drain select transistors of the cell strings CS21 to CS2m of the second row are connected to a second drain select line DSL 2.

The cell strings arranged in the column direction are connected to bit lines extending in the column direction. In fig. 4, the cell strings CS11 and CS21 of the first column are connected to the first bit line BL 1. The cell strings CS1m and CS2m of the mth column are connected to the mth bit line BLm.

Memory cells connected to the same word line in cell strings arranged in the row direction are configured into one page. For example, memory cells connected to the first word line WL1 among the cell strings CS11 through CS1m of the first row are arranged by one page. The memory cells connected to the first word line WL1 among the cell strings CS21 through CS2m of the second row configure another page. The cell strings arranged in one row direction may be selected by selecting any one of the drain select lines DSL1 and DSL 2. One page of the selected cell string may be selected by selecting any one of the word lines WL1 through WLn.

As another embodiment, even bit lines and odd bit lines may be provided instead of the first to mth bit lines BL1 to BLm. In addition, even-numbered cell strings among the cell strings CS11 to CS1m or CS21 to SC2m arranged in the row direction may be connected to even bit lines, respectively, and odd-numbered cell strings among the cell strings CS11 to CS1m or CS21 to CS2m arranged in the row direction may be connected to odd bit lines, respectively.

As an embodiment, at least one of the first through nth memory cells MC1 through MCn may be used as a dummy memory cell. For example, at least one dummy memory cell is provided to reduce an electric field between the source select transistor SST and the memory cells MC1 to MCp. Alternatively, at least one dummy memory cell is provided to reduce an electric field between the drain select transistor DST and the memory cells MCp +1 to MCn. As more dummy memory cells are provided, the reliability of the operation of the memory block BLKa improves, however, the size of the memory block BLKa increases. As fewer memory cells are provided, the size of the memory block BLKa may be reduced, however, the reliability of the operation of the memory block BLKa may be reduced.

In order to effectively control at least one dummy memory cell, each dummy memory cell may have a desired threshold voltage. Before or after the erase operation of the memory block BLKa, a program operation for all or part of the dummy memory cells may be performed. When an erase operation is performed after a program operation is performed, the dummy memory cells may have a desired threshold voltage by controlling voltages applied to dummy word lines connected to the respective dummy memory cells.

Fig. 4 is a circuit diagram illustrating another embodiment of any one of the memory blocks BLK1 through BLKz of fig. 2.

Referring to fig. 4, the memory block BLKb includes a plurality of cell strings CS11 'to CS1 m' and CS21 'to CS2 m'. Each of the plurality of cell strings CS11 'to CS1 m' and CS21 'to CS2 m' extends along the + Z direction. Each of the plurality of cell strings CS11 ' to CS1m ' and CS21 ' to CS2m ' includes at least one source select transistor SST, first memory cells MC1 to nth memory cells MCn, and at least one drain select transistor DST stacked on a substrate (not shown) under the memory block BLK1 '.

The source selection transistors SST of the respective cell strings are connected between the common source line CSL and the memory cells MC1 to MCn. The source selection transistors of the cell strings arranged in the same row are connected to the same source selection line. The source selection transistors of the cell strings CS11 'to CS1 m' arranged in the first row are connected to a first source selection line SSL 1. The source selection transistors of the cell strings CS21 'to CS2 m' arranged in the second row are connected to a second source selection line SSL 2. As another embodiment, the source select transistors of the cell strings CS11 'to CS1 m' and CS21 'to CS2 m' may be commonly connected to one source select line.

The first to nth memory cells MC1 to MCn of the respective cell strings are connected in series between the source selection transistor SST and the drain selection transistor DST. The gates of the first through nth memory cells MC1 through MCn are connected to the first through nth word lines WL1 through WLn, respectively.

The drain select transistor DST of each cell string is connected between the corresponding bit line and the memory cells MC1 to MCn. The drain select transistors of the cell strings arranged in the row direction are connected to a drain select line extending in the row direction. The drain select transistors of the cell strings CS11 'to CS1 m' of the first row are connected to a first drain select line DSL 1. The drain select transistors of the cell strings CS21 'to CS2 m' of the second row are connected to a second drain select line DSL 2.

As a result, the memory block BLKb of fig. 4 has an equivalent circuit similar to that of the memory block BLKa of fig. 3, except that the pipe transistors PT are excluded from the respective cell strings.

As another embodiment, an even bit line and an odd bit line may be provided instead of the first to mth bit lines BL1 to BLm. In addition, even-numbered cell strings among the cell strings CS11 'to CS1 m' or CS21 'to CS2 m' arranged in the row direction may be connected to even bit lines, respectively, and odd-numbered cell strings among the cell strings CS11 'to CS1 m' or CS21 'to CS2 m' arranged in the row direction may be connected to odd bit lines, respectively.

As an embodiment, at least one of the first through nth memory cells MC1 through MCn may be used as a dummy memory cell. For example, at least one dummy memory cell is provided to reduce an electric field between the source select transistor SST and the memory cells MC1 to MCn. Alternatively, at least one dummy memory cell is provided to reduce an electric field between the drain select transistor DST and the memory cells MC1 through MCn. As more dummy memory cells are provided, the reliability of the operation of the memory block BLKb improves, however, the size of the memory block BLKb increases. As fewer memory cells are provided, the size of the memory block BLKb may be reduced, however, the reliability of the operation of the memory block BLKb may be reduced.

In order to effectively control at least one dummy memory cell, each dummy memory cell may have a desired threshold voltage. Before or after the erase operation for the memory block BLKb, a program operation for all or part of the dummy memory cells may be performed. When an erase operation is performed after a program operation is performed, the dummy memory cells may have a desired threshold voltage by controlling voltages applied to dummy word lines connected to the respective dummy memory cells.

Fig. 5 is a circuit diagram illustrating an embodiment of any one of the memory blocks BLK1 through BLKz included in the memory cell array 110 of fig. 1.

Referring to fig. 5, the memory block BKLc includes a plurality of cell strings CS1 through CSm. The plurality of cell strings CS1 to CSm may be connected to a plurality of bit lines BL1 to BLm, respectively. Each of the cell strings CS1 to CSm includes at least one source select transistor SST, first to nth memory cells MC1 to MCn, and at least one drain select transistor DST.

Each of the memory cells MC1 to MCn and the selection transistors SST and DST may have a similar structure. As an embodiment, each of the selection transistors SST and DST and the memory cells MC1 to MCn may include a channel layer, a tunneling insulating film, a charge storage film, and a blocking insulating film. As an embodiment, pillars for providing channel layers may be disposed in respective cell strings. As an embodiment, pillars for providing at least one of a channel layer, a tunnel insulating film, a charge storage film, and a barrier insulating film may be disposed in the respective cell strings.

The source selection transistors SST of the respective cell strings are connected between the common source line CSL and the memory cells MC1 to MCn.

The first to nth memory cells MC1 to MCn of the respective cell strings are connected between the source selection transistor SST and the drain selection transistor DST.

The drain select transistor DST of each cell string is connected between the corresponding bit line and the memory cells MC1 to MCn.

Memory cells connected to the same word line are arranged in one page. The cell strings CS1 to CSm can be selected by selecting the drain select line DSL. One page among the selected cell strings may be selected by selecting any one of the word lines WL1 through WLn.

As another embodiment, an even bit line and an odd bit line may be provided instead of the first to mth bit lines BL1 to BLm. Even-numbered cell strings among the cell strings CS1 through CSm may be connected to even bit lines, respectively, and odd-numbered cell strings may be connected to odd bit lines, respectively.

As described above, memory cells connected to one word line may be configured into one physical page. In the example of fig. 5, among memory cells belonging to the memory block BLKc, m memory cells connected to any one of the plurality of word lines WL1 to WLn configure one physical page.

The memory cell array 110 of the semiconductor memory device 100 may be configured in a three-dimensional structure as shown in fig. 2 to 4, but may also be configured in a two-dimensional structure as shown in fig. 5.

Fig. 6 is a diagram schematically illustrating a page buffer 131 according to an example of an embodiment.

During a read operation or a program verify operation, data stored in the memory cell or a threshold voltage of the memory cell is sensed through the bit line BL. The page buffer 131 may include a bit line sense latch BSLAT; 1314 for storing the sensing result. In addition, the bit line sense latch 1314 may be used to determine a program-enable voltage or a program-inhibit voltage applied to the bit line BL during a program execution operation.

The page buffer 131 may include a plurality of data latches 1311, 1312, and 1313 for storing program data externally input during a program operation. For example, in the embodiment shown in fig. 6, the page buffer 131 may store 3-bit data. In this case, the data latch LAT1 or 1311 may store the Most Significant Bit (MSB), the data latch LAT2 or 1312 may store the Central Significant Bit (CSB), and the data latch LAT3 or 1313 may store the Least Significant Bit (LSB). Data latches 1311, 1312, and 1313 may maintain the stored program data until programming of the memory cells is complete.

In addition, cache latch CSLAT; 1315 may receive Data read from the memory cells during a read operation from the bit line sense latch 1314 and output the Data to the outside of the page buffer 131 through a Data output line Data _ out.

In addition, the page buffer 131 may include a bit line connection transistor 1316 that controls the connection between the bit line BL and the bit line sense latch 1314, and between the data latches 1311, 1312, and 1313 and the cache latch 1315. The bit line connection transistor 1316 is controlled by a bit line connection signal PB _ SENSE. For example, when reading data from a memory cell, the bit line connection transistor 1316 turns on to electrically connect the bit line BL and the bit line sense latch 1314. In addition, the bit line connection transistor 1316 may turn off when the data stored in the bit line sense latch 1314 is sent to the cache latch 1315.

In a verify process during a program operation of a memory cell, a value indicating whether a threshold voltage of the memory cell connected to the corresponding bit line BL is greater than a verify voltage corresponding to a target state may be stored in the bit line sense latch 1314. For example, a value of "0" may be stored in bit line sense latch 1314 when the threshold voltage of the memory cell connected to bit line BL is less than the verify voltage corresponding to the target state. While a value "0" is stored in the bit line sense latch 1314, a program enable voltage is applied to the bit line BL when a program pulse is applied. Further, as the programming process proceeds, a value of "1" may be stored in bit line sense latch 1314 when the threshold voltage of the memory cell connected to bit line BL is greater than the verify voltage corresponding to the target state. When a value of "1" is stored in the bit line sense latch 1314, the value of the bit line sense latch 1314 is maintained at "1" in a subsequent programming cycle, and a program inhibit voltage is applied to the bit line BL when a program pulse is applied. Further, since the threshold voltage of the memory cell corresponding to the erase state E does not need to be increased, the bit line sense latch 1314 connected to the page buffer 131 of the memory cell corresponding to the erase state E may have a value of "1" from the start of programming.

Accordingly, whether or not the memory cell of the bit line BL connected to the page buffer 131 is programmed to the target program state may be determined by the value of the bit line sense latch 1314. The current sensing circuit 160 performs a current sensing operation based on the value stored in the bit line sense latch 1314 of the page buffer 131. Thus, current sensing circuit 160 may determine whether a verify operation corresponding to a particular target program state is complete.

Fig. 7 is a block diagram illustrating a memory cell array, a read-write circuit, and a current sensing circuit of the semiconductor memory device.

Referring to fig. 7, the memory cell array 110 of the semiconductor memory device 100 may include a plurality of memory blocks according to an embodiment. Although not shown in fig. 7, according to another embodiment of the present disclosure, a memory cell array of a semiconductor memory device may include a plurality of planes, and each plane may include a plurality of memory blocks.

A plurality of memory blocks included in the memory cell array 110 may be connected to the read and write circuit 130 through bit lines BLs. Further, the read and write circuits 130 may be connected to the current sensing circuit 160.

When the ith memory block BLKi is selected as a program target, the semiconductor memory device 100 may perform a program operation on the selected ith memory block BLKi.

While the program operation on the ith memory block BLKi is performed, the current sensing circuit 160 may output a PASS signal PASS or a FAIL signal FAIL by comparing a reference voltage generated by a reference current with a sensing voltage VPB received from a page buffer included in the write circuit 130 for a verification operation of memory cells included in the ith memory block BLKi. As described above, an operation of outputting the PASS signal PASS or the FAIL signal FAIL for a specific program state of the memory cell based on the sensing voltage VPB by the current sensing circuit 160 may be referred to as a "current sensing operation". The current sensing operation for a specific program state will be described later with reference to fig. 8.

According to the present disclosure, a program pulse may be applied to a selected word line of the selected ith memory block BLKi by the read and write circuit 130. Further, the current sensing circuit 160 may perform a current sensing operation while a program pulse is applied to the selected word line. In an embodiment, in order to reduce a program time, a current sensing operation and an operation of applying a program pulse to a selected word line may be performed simultaneously. In another embodiment, the current sensing operation and the operation of applying the programming pulse may be performed at different times. The terms "simultaneously" and "simultaneously" as used herein with respect to occurrence mean that the occurrence occurs over overlapping time intervals. For example, if the first occurrence occurs within a first time interval and the second occurrence occurs simultaneously within a second time interval, the first interval and the second interval at least partially overlap each other such that there is time for both the first occurrence and the second occurrence to occur.

FIG. 8 is a graph illustrating a target program state of a three level cell.

Referring to fig. 8, a three-level cell (TLC) has a total of eight threshold voltage states. The threshold voltage states of TLC include an erase state E and first through seventh target program states P1 through P7. The erase state E and the first through seventh target program states P1 through P7 have corresponding bit codes. Various bit codes may be provided to the erase state E and the first through seventh target program states P1 through P7 as needed.

The respective threshold voltage states may be distinguished based on the first to seventh read voltages R1 to R7. In addition, the first to seventh verify voltages VR1 to VR7 may be used to determine whether programming of memory cells corresponding to respective target program states of a program operation is completed.

For example, the second verifying voltage VR2 is applied to the word line to verify a memory cell corresponding to the second target program state P2 among memory cells included in the selected physical page. At this time, the memory cells corresponding to the second program state P2 may be distinguished by the data latches 1311, 1312, and 1313 shown in fig. 6. For example, when the bit code corresponding to the second target program state is "101", the memory cells connected to the page buffers whose values "1", "0", and "1" are stored in the data latches 1311, 1312, and 1313, respectively, are the memory cells to be programmed to the second target program state P2. Among the memory cells to be programmed to the second target program state P2, the memory cell having the value of "0" of the bit line sense latch 1314 is a memory cell that has not yet been programmed to the second target program state P2, and the memory cell having the value of "1" of the bit line sense latch 1314 is a memory cell that has been programmed to the second target program state P2.

The second verify voltage VR2 is applied to the word line and the bit line BL is sensed, and the value of the bit line sense latch 1314 maintains a "0" when the threshold voltage of the memory cell is less than the second verify voltage VR 2. On the other hand, when the threshold voltage of the memory cell is greater than the second verify voltage VR2, the value of the bit line sense latch 1314 becomes "1". When the value of the bit line sense latch 1314 becomes "1," a program inhibit voltage is applied to the bit line BL connected to the corresponding memory cell in a subsequent program cycle. Therefore, even if a program pulse is applied to a word line, the threshold voltage of the corresponding memory cell is not increased any more.

As described above, the operation of changing the value of the bit line sense latch 1314 corresponding to the second verify voltage VR2 is performed separately for the memory cells to be programmed to the second target program state P2. Whether programming (i.e., verification pass/fail determination) is completed for the memory cells to be programmed to the second target program state P2 is performed by the current sensing circuit 160 of fig. 1 and 7.

In the example of fig. 1, the current sensing circuit 160 determines whether the verification passes or fails by comparing a reference voltage based on a reference current corresponding to the number of memory cells to be programmed to the second target program state P2 with a sensing voltage VPB based on a sensing current corresponding to the number of memory cells of which threshold voltages are greater than the verification voltage VR2 among the memory cells to be programmed to the second target program state P2. That is, the current sensing circuit 160 determines whether the verification of the second target program state P2 passes or fails by comparing the sensing voltage VPB, which is determined according to the number of memory cells having a value of "1" stored in the bit line sense latch BSLAT among the memory cells to be programmed to the second target program state P2, with the reference voltage.

As described above, the current sensing circuit may determine a verify pass/fail for a particular target program state (e.g., P2). As described above, among a plurality of target program states, an operation of determining a verification pass/fail for a specific target program state may be referred to as a "current sensing operation".

Although the target program state of the three-level cell is illustrated in fig. 8, this is an example, and the plurality of memory cells included in the semiconductor memory device according to the embodiment of the present disclosure may be multi-level cells (MLCs). In another embodiment, a plurality of memory cells included in the semiconductor memory device according to the embodiment of the present disclosure may be four-level cells. Hereinafter, the present disclosure will be described centering on a programming operation of the three-level cell. However, the present disclosure is not limited thereto, and the present disclosure may also be applied to programming of a four-level cell or a memory cell storing five bits or more of data.

Fig. 9 is a diagram for describing a program operation according to an embodiment of the present disclosure.

Referring to fig. 9, a voltage applied to a selected word line while a program operation is in progress and a current sensing operation performed by a current sensing circuit are illustrated. The program operation shown in fig. 9 includes a total of N program cycles.

The first program pulse VP1 is applied to the word line selected in the first program cycle. Thereafter, a first verify voltage VR1 is applied to the word line selected for the verify operation. The reason why only the first verification voltage VR1 is applied in the first program loop is that there is a very low possibility that a memory cell programmed to the second target program state P2 or higher than the second target program state P2 exists as a result of performing the first program loop. After the first verification voltage VR1 is applied, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell having a threshold voltage higher than the first verification voltage VR1 among the memory cells to be programmed to the first target program state P1 may be changed to "1". On the other hand, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell having a threshold voltage lower than the first verify voltage VR1 among the memory cells to be programmed to the first target program state P1 may maintain "0".

After applying the first verify voltage VR1, a current sensing operation CSC1 for the first target program state P1 is performed. Since only some of the memory cells to be programmed to the first target program state P1 were programmed, the verification for the first target program state P1 failed (CSC 1-Fail).

Further, while the current sensing operation CSC1 for the first target program state P1 is being performed, the second program pulse VP2 may be applied to the selected word line. That is, the second programming cycle may begin with the current sensing operation CSC1 for the first target program state P1. As described above, the current sensing operation of the first program cycle and the operation of applying the program pulse of the second program cycle are simultaneously performed in order to reduce the entire program time. The programming speed can be improved by simultaneously performing the current sensing operation of the first programming cycle and the operation of applying the programming pulse of the second programming cycle.

After the second program pulse VP2 is applied, the first and second verify voltages VR1 and VR2 are applied to the selected word line. As the first and second verify voltages VR1 and VR2 are applied, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell, whose programming is completed, among the memory cells to be programmed to the first and second target program states P1 and P2 may be changed to "1". On the other hand, the value of the bit line sense latch 1314 connected to the page buffer of a memory cell, a program-unfinished memory cell among memory cells to be programmed to the first and second target program states P1 and P2, may maintain '0'.

The verify voltages applied in the respective program loops may be appropriately selected. For example, in the embodiment of fig. 9, the second verification voltage VR2 is applied from the second program loop, but according to an embodiment, the second verification voltage VR2 may be applied from the first program loop, or the second verification voltage VR2 may be applied from the third program loop.

After applying the verify voltages VR1 and VR2, the current sensing operation CSC1 for the first target program state P1 is performed again. In the example of fig. 9, although the second program pulse VP2 is applied, the program operation for the first target program state P1 is not completed. Thus, the verify for the first target program state P1 in the second programming cycle failed (CSC 1-Fail).

While the current sensing operation CSC1 for the first target program state P1 is performed, the third program pulse VP3 may be applied to the selected word line. That is, the third programming cycle may begin with the current sensing operation CSC1 for the first target program state P1. After the third program pulse VP3 is applied, the first to third verify voltages VR1 to VR3 are applied to the selected word line. As the first to third verify voltages VR1 to VR3 are applied, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell, of which programming is completed, among the memory cells to be programmed to the first to third target program states P1 to P3 may be changed to "1". On the other hand, the values of the bit line sense latches 1314 connected to the page buffer of the memory cells, of which programming is not completed, among the memory cells to be programmed to the first through third target program states P1 through P3 may maintain '0'.

After applying the verify voltages VR1, VR2 and VR3, the current sensing operation CSC1 for the first target program state P1 is performed again. In the example of fig. 9, the program operation for the first target program state P1 is completed in the third program loop. Thus, verification for the first target program state P1 passed in the third programming cycle (CSC 1-Pass).

While the current sensing operation CSC1 for the first target program state P1 is performed, the fourth program pulse VP4 may be applied to the selected word line. That is, the fourth programming cycle may begin with the current sensing operation CSC1 for the first target program state P1. After applying the fourth programming pulse VP4, verify voltages VR2, VR3, and VR4 are applied. Since the verify for the first target program state P1 passed in the third programming cycle, the first verify voltage VR1 may not be applied in the fourth programming cycle.

As the second to fourth verify voltages VR2 to VR4 are applied, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell, of which programming is completed, among the memory cells to be programmed to the second to fourth target program states P2 to P4 may be changed to "1". On the other hand, the values of the bit line sense latches 1314 connected to the page buffer of the memory cells, of which programming is not completed, among the memory cells to be programmed to the second through fourth target program states P2 through P4 may maintain '0'.

Since the verification passes as a result of the current sensing operation CSC1 for the first target program state P1 in the third program cycle, the current sensing operation CSC2 for the second target program state P2 is performed in the fourth program cycle. In the example of fig. 9, the program operation for the second target program state P2 is not completed in the fourth program loop. Therefore, the verification for the second target program state P2 failed in the fourth program loop (CSC 1-Fail).

Thereafter, the verification passes as a result of the current sensing operation CSC2 for the second target program state in the fifth programming cycle. This programming cycle is repeatedly performed. Descriptions of the sixth to (N-3) th programming are omitted.

In the (N-2) th programming cycle, the current sensing operation CSC7 for the seventh target program state P7 fails. The (N-1) th program pulse VP (N-1) may be applied to the selected word line while the current sensing operation CSC7 for the seventh target program state P7 is performed. That is, the (N-1) th programming cycle may begin with the current sensing operation CSC7 for the seventh target program state P7.

After applying the (N-1) th program pulse VP (N-1), a seventh verify voltage VR7 is applied to the selected word line. As the seventh verify voltage VR7 is applied, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell completing programming among the memory cells to be programmed to the seventh target program state P7 may be changed to "1". On the other hand, the value of the bit line sense latch 1314 connected to the page buffer of the memory cell whose programming is not completed among the memory cells to be programmed to the seventh target program state P7 may maintain '0'.

After applying the seventh verify voltage VR7, the current sensing operation CSC7 for the seventh target program state P7 is performed again. Further, the nth program pulse VPN is applied to the selected word line together with the current sensing operation CSC7 for the seventh target program state P7.

In the example of FIG. 9, the program operation for the seventh target program state P7 is completed in the (N-1) th program loop. Thus, verification for the seventh target program state P7 passes through (CSC7-Pass) in the (N-1) th programming cycle. Thus, the program operation ends.

As described above, since the current sensing operation of the (N-1) th programming cycle and the application of the nth programming pulse are simultaneously performed, the nth programming pulse VPN becomes an unnecessarily applied programming pulse. Since the time required to apply the program pulse is relatively longer than the time required to perform the current sensing operation, the program time may be unnecessarily increased by applying the nth program pulse VPN that does not need to be applied. Furthermore, an over-programming phenomenon in which the threshold voltages of some of the memory cells to be programmed to the seventh target program state P7 are too high may occur due to the unnecessary N-th program pulse VPN being applied again. This may be a factor that hinders stability of a program operation of the semiconductor memory device.

According to a programming method according to another embodiment of the present disclosure, a current sensing operation and a program pulse applying operation are performed based on a program progress state. That is, the current sensing operation and the program pulse applying operation are simultaneously performed or sequentially performed according to the program progress state. Therefore, as shown in fig. 9, at the time point when the verification of the last target program state P7 passes, it is possible to prevent the unnecessary nth program pulse VPN from being applied. Accordingly, a programming speed of the semiconductor memory device may be improved, and stability of a programming operation may also be improved.

Fig. 10 is a flowchart illustrating a programming method according to another embodiment of the present disclosure. Referring to fig. 10, a programming method according to another embodiment of the present disclosure includes: applying a program pulse to a selected word line (S110); applying a verify voltage to the selected word line (S130); performing a current sensing operation and application of a program pulse based on a program progress state of the selected memory cell (S150); and determining whether the programming is completed (S170).

In step S110, a program pulse is applied to the selected word line. In step S110, a first program pulse of a first program loop may be applied.

In step S130, a verify voltage is applied to the selected word line. In step S130, a verify voltage including at least a first verify voltage may be applied to the selected word line.

In step S150, a current sensing operation and an operation of applying a program pulse may be performed based on a program progress state of a memory cell connected to a selected word line. For example, at the beginning of the programming schedule, the current sensing operation and the operation of applying the programming pulse may be performed simultaneously to shorten the overall programming time. However, as the program progress proceeds or in the latter half of the program progress, the current sensing operation and the operation of applying the program pulse may be sequentially performed to prevent an unnecessary program pulse from being applied to the selected word line.

For example, when the program progress state (program progress) of the selected memory cell corresponds to the "first state (first phase)", the current sensing operation and the operation of applying the program pulse may be simultaneously performed. The first state may correspond to an early stage of a program operation, including a first program loop among a plurality of program loops. On the other hand, when the program progress state of the selected memory cell corresponds to a "second state (second phase)" occurring after the first state, the current sensing operation and the operation of applying the program pulse may be sequentially performed. The second state may correspond to a final phase of the program operation, including a last cycle immediately before programming is completed among the plurality of program cycles.

An example of an implementation of step S150 will be described with reference to fig. 11 and 15.

In step S170, it is determined whether the programming is completed. As a result of performing step S150, when the verification passes for all target program states (S170: YES), the program operation may end because the programming is successfully completed. As a result of performing step S150, when verification fails for at least some target program states, the method may again proceed to step S150 and the programming loop may be repeatedly performed.

Fig. 11 is a flowchart illustrating an example of an implementation of step S150 of fig. 10.

Referring to fig. 11, first, the state of program that passes verification is checked (S210). In step S210, the programmed state of the target to perform the current sensing operation can be determined by checking the programmed state verified so far. For example, when the verification of the first through third target program states P1 through P3 among the first through seventh target program states P1 through P7 passes, it may be necessary to perform the current sensing operation CSC4 on the fourth target program state P4. As another example, when the verification of the first through sixth target program states P1 through P6 among the first through seventh target program states P1 through P7 passes, it may be necessary to perform the current sensing operation CSC7 of the seventh target program state P7 as the last program state. In the present specification, the "last programmed state" refers to a target programmed state corresponding to the highest threshold voltage, i.e., the seventh target programmed state P7, among the plurality of target programmed states P1 through P7.

In step S230, it is determined whether the current sensing operation corresponds to the last programmed state. As described above, when the verification of the first through third target program states P1 through P3 among the first through seventh target program states P1 through P7 passes, the current sensing operation does not correspond to the last program state since the current sensing operation corresponds to the fourth target program state P4 (S230: No). As another example, when the verifications of the first through sixth target program states P1 through P6 among the first through seventh target program states P1 through P7 pass, it is necessary to perform the current sensing operation CSC7 for the seventh target program state P7, which is the last program state, the current sensing operation corresponding to the last program state (S230: yes). That is, in the embodiment of fig. 11, when the current sensing operation does not correspond to the last program state, the program progress state (program progress) may correspond to the above-described "first state (first phase)". On the other hand, when the current sensing operation corresponds to the last programmed state, the program progress state may correspond to the above-described "second state (second stage)".

When the current sensing operation corresponds to the last program state (S230: yes), this means that the program operation enters the final stage. Accordingly, in this case, the current sensing operation and the operation of applying the program pulse are sequentially performed (S250). Accordingly, when the verification of the current sense operation CSC7 corresponding to the last programmed state (e.g., P7) passes, unnecessary program pulses may be prevented from being applied to the selected word line. A detailed embodiment of step S250 will be described later with reference to fig. 12.

When the current sensing operation does not correspond to the last program state (S230: no), this means that the program operation has not entered the final stage. Accordingly, in this case, the current sensing operation and the operation of applying the program pulse are simultaneously performed (S270). Therefore, the overall programming time can be shortened. A detailed embodiment of step S270 will be described later with reference to fig. 13.

After performing step S250 or step S270, the method proceeds to step S170 of fig. 10. Therefore, when the programming is completed according to the execution of step S250 or step S270 (S170: YES), the entire programming operation ends. When the programming is not completed according to the execution of step S250 or step S270 (S170: no), the method proceeds to step S150 and a subsequent programming cycle is performed.

As shown in fig. 11, according to a programming method of a semiconductor memory device according to another embodiment of the present disclosure, a current sensing operation and an operation of applying a program pulse are sequentially or simultaneously performed according to whether the current sensing operation corresponds to a last program state by checking a state of verifying a program that passes. Therefore, when the program operation enters the final stage, the current sensing operation and the operation of applying the program pulse are sequentially performed to prevent unnecessary program pulses from being applied. When the program operation has not entered the final stage, the current sensing operation and the operation of applying the program pulse are simultaneously performed to reduce the program time. Accordingly, the entire program speed may be improved, and the stability of the program operation may also be improved.

Fig. 12 is a flowchart illustrating an embodiment of step S250. That is, fig. 12 shows a flowchart illustrating an embodiment in which when the current sensing operation corresponds to the last program state as a result of the determination of step S230, the current sensing operation and the operation of applying the program pulse are sequentially performed.

Referring to fig. 12, first, a current sensing operation is performed (S251). Since the steps of fig. 12 are performed when the current sensing operation corresponds to the last program state as a result of the determination of step S230, the current sensing operation CSC7 of the seventh target program state P7 may be performed in step S251.

Thereafter, in step S253, it is determined whether the verification of the seventh target program state P7 failed. When the verification passes for the seventh target program state P7 (S253: NO), the method proceeds to step S170 to determine whether programming is complete. Since the verification of the seventh target program state P7 passed, this means that the programming is complete (S170: YES), so the programming operation may end.

When verification fails for the seventh target program state P7 (S253: YES), a subsequent program loop may need to be performed. Accordingly, a program pulse is applied to the selected word line (S255), and a verify voltage is applied to the selected word line (S257). In step S257, a seventh verify voltage VR7 may be applied to the selected word line.

Thereafter, the method proceeds to step S251 again to perform the current sensing operation and to perform step S253. This process is repeated until the verification of the seventh target program state P7 is passed (S253: no).

Referring to fig. 12, after a current sensing operation is first performed (S251), it may be determined whether verification failed (S253), and when verification fails (S253: yes), a subsequent program pulse may be applied to a selected word line (S255). That is, the current sensing operation and the operation of applying the program pulse are sequentially performed. Thus, when the verification of the seventh target program state P7 is passed, the method proceeds directly to step S170 to end the programming operation, and no unnecessary program pulses are applied.

Fig. 13 is a flowchart illustrating an embodiment of step S270. That is, fig. 13 shows a flowchart illustrating an embodiment in which when the current sensing operation does not correspond to the last program state as a result of the determination of step S230, the current sensing operation and the operation of applying the program pulse are simultaneously performed.

Referring to fig. 13, a current sensing operation is performed (S271), and at the same time, a program pulse is applied to a selected word line (S273). Since the steps of fig. 13 are performed when the current sensing operation does not correspond to the last program state as a result of the determination of step S230, in step S271, the current sensing operation for any one of the first through sixth target program states P1 through P6 may be performed. For example, the current sensing operation CSC3 for the third target program state P3 may be performed.

Thereafter, in step S275, for example, it is determined whether the verification of the third target program state P3 failed. When the verification passes for the third target program state P3 (S275: NO), the method proceeds to step S170 to determine whether programming is complete. Even if the verification of the third target program state P3 is passed, since the verification of the fourth through seventh target program states P4 through P7 is not passed, the method may again proceed to step S150 to perform a subsequent program loop. In this case, the current sensing operation CSC4 for the fourth target program state P4 may be performed.

When verification fails for the third target program state P3 (S275: YES), a subsequent program loop may need to be performed. Accordingly, the verify voltage is applied to the selected word line (S277). In step S277, for example, a verify voltage including at least the third verify voltage VR3 may be applied to the selected word line.

Thereafter, the method proceeds to step S271 and step S273 again to perform the current sensing operation and the program pulse applying operation, respectively, and performs step S275. This process repeats, for example, until verification of the third target program state P3 passes (S275: NO).

Referring to fig. 13, a current sensing operation (S271) and an operation of applying a program pulse to a selected word line (S273) are simultaneously performed. Thereafter, it may be determined whether the verification failed (S275), and when the verification fails (S275: YES), a verification voltage may be applied to the selected word line (S277). That is, the current sensing operation and the operation of applying the program pulse are simultaneously performed. That is, when the current sensing operation for the first through sixth target program states P1 through P6 is performed, the operations of applying the program pulses belonging to the subsequent program cycle may be simultaneously performed, thereby reducing the entire program time.

Fig. 14 is a diagram illustrating a programming method described with reference to fig. 11 to 13. Referring to fig. 14, the program operation is performed in the same manner as shown in fig. 9 until the verification passes as a result of the current sensing operation CSC6 for the sixth target program state P6. That is, since the program operation is performed in the same manner as shown in fig. 9 from the first to (N-4) th program loops, a repetitive description will be omitted.

In FIG. 14, applying the first program pulse VP1 in the first program loop corresponds to step S110 of FIG. 10, and applying the first verify voltage VR1 corresponds to step S130 of FIG. 10. Thereafter, the step from performing the current sensing operation CSC1 on the first target program state P1 belongs to step S150 of fig. 10.

While the first to (N-4) th program loops are repeatedly performed, since the current sensing operation does not correspond to the last program state as a result of the determination of step S230 of fig. 11 (S230: no), the method proceeds to step S270. In step S270, a current sensing operation and an operation of applying a program pulse are simultaneously performed. That is, while the first to (N-4) th program loops are performed, the current sensing operation (S271) and the operation of applying the program pulse (S273) are simultaneously performed, and then it is determined whether the verification fails (S275).

In FIG. 14, the current sensing operation CSC6 for the sixth target program state P6 is performed in the (N-4) th programming cycle. At the same time, the (N-3) th program pulse VP (N-3) is applied to the selected word line. According to fig. 14, since the verification passes as a result of the current sensing operation CSC6 being performed on the sixth target program state P6 in the (N-4) th programming cycle, the target of the current sensing operation is now the seventh target program state P7 which is the last programmed state. Accordingly, as a result of the determination of step S230 of FIG. 11, the current sensing operation corresponds to the last programmed state (S230: YES), and the method proceeds to step S250. In step S250, a current sensing operation and an operation of applying a program pulse are sequentially performed. That is, from the (N-3) th program loop, the current sensing operation (CSC7) and the subsequent operation of applying the program pulse are sequentially performed. When the verification passes as a result of the current sensing operation CSC7 for the seventh target program state P7, the program operation ends without a subsequent operation of applying a program pulse.

That is, the current sensing operation CSC7 for the seventh target program state P7 is performed after the verify voltage VR7 is applied in the (N-1) th program cycle (S251), and since the verify passes (S253: no), the method proceeds to step S170 to determine that the programming is completed, and the entire program operation ends. Therefore, according to the programming method shown in fig. 14, except for the embodiment shown in fig. 9, an unnecessary nth program pulse VPN is not applied.

Fig. 15 is a flowchart illustrating another embodiment of step S150 of fig. 10.

Referring to fig. 15, the number CNT of program pulses applied to a selected word line is checked_PGM(S310). Number of programming pulses CNT applied to selected word line_PGMIs the number of times a program pulse is applied to a selected word line after a program operation for memory cells connected to the selected word line is started, and corresponds to the number of program cycles. For example, when the program pulses are applied up to the fifth program pulse as a result of the execution of step S310, the checked number CNT of applied program pulses_PGMMay be five.

After that time, the user can select the desired position,in step S330, the number CNT of programming pulses is applied_PGMWith a predetermined threshold number N_THA comparison is made. Threshold number N_THCan be determined by experiment. For example, when the entire program operation is completed when the program pulse is applied 20 times on average as a result of repeated experiments, the threshold number N_THMay be determined to be a slightly smaller value. For example, the threshold number N_THMay be determined as 18 or 19. However, this is an example, and another value may be determined as the threshold number N as needed_TH. The term "predetermined" (e.g., a predetermined threshold number) as used herein with respect to a parameter means that the value of the parameter is determined prior to using the parameter in a process or algorithm. For some embodiments, the values of the parameters are determined before the process or algorithm begins. In other embodiments, the values of the parameters are determined during the process or algorithm but before the parameters are used in the process or algorithm.

In the embodiment of FIG. 15, CNT is applied when the number of programming pulses_PGMLess than a threshold number N_THThe program progress state (program progress) may correspond to the above-described "first state (first phase)". On the other hand, CNT when applying the number of programming pulses_PGMIs equal to or greater than a threshold number N_THThe program progress state may correspond to the above-described "second state (first phase)".

CNT when applying programming pulses_PGMIs equal to or greater than a threshold number N_THWhen (S330: YES), this means that the program operation enters the final stage. Accordingly, in this case, the current sensing operation and the operation of applying the program pulse are sequentially performed (S350). Accordingly, unnecessary program pulses can be prevented from being applied to the selected word line in the final stage of the program operation. Step S350 may be configured as the embodiment shown in fig. 12.

CNT when applying programming pulses_PGMLess than a threshold number N_THTime (S330: No), which means that the program operation has not entered the final stage. Accordingly, in this case, the current sensing operation and the operation of applying the program pulse are simultaneously performed (S370). Therefore, the overall programming time can be shortened. Step S370 may be configured as the embodiment shown in fig. 13.

After performing step S350 or step S370, the method proceeds to step S170 of fig. 10. Therefore, when the programming is completed according to the execution of step S350 or step S370 (S170: YES), the entire programming operation is ended. When the programming according to the execution of step S350 or step S370 is not completed (S170: no), the method proceeds to step S150 to execute a subsequent programming cycle.

As shown in fig. 15, according to a programming method of a semiconductor memory device according to another embodiment of the present disclosure, the number CNT of program pulses applied to a currently selected word line is checked_PGMAnd CNT according to the number of programming pulses applied_PGMWhether or not less than a threshold number N_THThe current sensing operation and the operation of applying the program pulse are performed sequentially or simultaneously. Therefore, when the program operation enters the final stage, the current sensing operation and the operation of applying the program pulse are sequentially performed to prevent unnecessary program pulses from being applied. When the program operation has not entered the final stage, the current sensing operation and the operation of applying the program pulse are simultaneously performed to reduce the program time. Accordingly, the entire program speed may be improved, and the stability of the program operation may also be improved.

Fig. 16 is a diagram illustrating the programming method described with reference to fig. 15.

Referring to FIG. 16, when the number of times of application of the program pulse is less than the threshold value N_THThe program operation is performed in the same manner as shown in fig. 9. That is, since the program operation is performed in the same manner as shown in fig. 9 up to the first to (N) th_TH-1) a program loop, so a repetitive description will be omitted.

In fig. 16, the application of the first program pulse VP1 in the first program loop corresponds to step S110 of fig. 10, and the application of the first verify voltage VR1 corresponds to step S130 of fig. 10. Thereafter, the step from performing the current sensing operation CSC1 on the first target program state P1 belongs to step S150 of fig. 10.

In repeatedly performing the first to (N) th_TH-1) the number of program pulses CNT applied to the selected word line due to the determination as a result of step S330 of FIG. 15, simultaneously with the program loop_PGMLess than a threshold numberQuantity N_TH(S330: NO), the method proceeds to step S370. In step S370, a current sensing operation and an operation of applying a program pulse are simultaneously performed. I.e. in performing the first to (N) th_TH-1) simultaneously performing a current sensing operation (S271) and an operation of applying a program pulse (S273) while the program loop is being executed, and then determining whether the verification fails (S275).

In FIG. 16, in the (N) th_TH-1) performing a current sensing operation CSC6 of the sixth target program state P6 in a programming cycle. Meanwhile, the (N) th programming pulse VPN_THIs applied to the selected word line. Therefore, since the number of program pulses CNT applied to the selected word line as a result of the determination of step S330_PGMIs equal to a threshold number N_TH(S330: YES), the method proceeds to step S350. Accordingly, in step S350, the current sensing operation and the operation of applying the program pulse are sequentially performed. That is, from the nth program loop, the current sensing operation CSC7 and the subsequent operation of applying the program pulse are sequentially performed. When the verification passes as a result of the current sensing operation CSC7 for the seventh target program state P7, the program operation ends without a subsequent operation of applying a program pulse.

I.e. in the (N) th_TH+3) the current sensing operation CSC7 for the seventh target program state P7 is performed after the verify voltage VR7 is applied in the program loop (S251), since the verify passes (S253: no), the method proceeds to step S170 to determine that the programming is completed, and the entire programming operation is ended. Therefore, unlike the embodiment shown in fig. 9, according to the programming method shown in fig. 16, the unnecessary (N) th bit is not applied_TH+4) programming pulses.

Fig. 17 is a block diagram illustrating an embodiment of a memory system 1000 including the semiconductor memory device of fig. 1.

Referring to fig. 17, a memory system 1000 includes a semiconductor memory device 100 and a controller 1100. The semiconductor memory device 100 may be the semiconductor memory device described with reference to fig. 1. Hereinafter, duplicate description is omitted.

The controller 1100 is connected to the Host and the semiconductor memory device 100. The controller 1100 is configured to access the semiconductor memory apparatus 100 in response to a request from the Host. For example, the controller 1100 is configured to control a read operation, a write operation, an erase operation, and a background operation of the semiconductor memory apparatus 100. The controller 1100 is configured to provide an interface between the semiconductor memory device 100 and the Host. The controller 1100 is configured to drive firmware for controlling the semiconductor memory apparatus 100.

Controller 1100 includes Random Access Memory (RAM)1110, processing unit 1120, host interface 1130, memory interface 1140, and error correction block 1150. The RAM 1110 functions as any one of an operation memory of the processing unit 1120, a cache memory between the semiconductor memory device 100 and the Host, and a buffer memory between the semiconductor memory device 100 and the Host. The processing unit 1120 controls the overall operation of the controller 1100. In addition, the controller 1100 may temporarily store program data provided from the Host during a write operation.

The Host interface 1130 includes a protocol for performing data exchange between the Host and the controller 1100. As an example of an embodiment, the controller 1100 is configured to communicate with the Host through at least one of various interface protocols such as a Universal Serial Bus (USB) protocol, a multi-media card (MMC) protocol, a Peripheral Component Interconnect (PCI) protocol, a PCI express (PCI-E) protocol, an Advanced Technology Attachment (ATA) protocol, a serial ATA protocol, a parallel ATA protocol, a Small Computer System Interface (SCSI) protocol, an Enhanced Small Disk Interface (ESDI) protocol, an Integrated Drive Electronics (IDE) protocol, and a proprietary protocol.

The memory interface 1140 interfaces with the semiconductor memory device 100. For example, the memory interface includes a NAND interface or a NOR interface.

The error correction block 1150 is configured to detect and correct an error of data received from the semiconductor memory apparatus 100 using an Error Correction Code (ECC). The processing unit 1120 may control a read voltage according to the error detection result of the error correction block 1150, and control the semiconductor memory device 100 to perform re-reading. As an example of an implementation, the error correction block may be provided as a component of the controller 1100.

The controller 1100 and the semiconductor memory device 100 may be integrated into one semiconductor device. As an example of the embodiment, the controller 1100 and the semiconductor memory device 100 may be integrated into one semiconductor device to configure a memory card. For example, the controller 1100 and the semiconductor memory device 100 may be integrated into one semiconductor device to form a memory card such as a PC card (personal computer memory card international association (PCMCIA)), a compact flash Card (CF), a smart media card (SM or SMC), a memory stick, a multimedia card (MMC, RS-MMC, or MMCmicro), an SD card (SD, miniSD, microSD, or SDHC), and a universal flash memory (UFS).

The controller 1100 and the semiconductor memory device 100 may be integrated into one semiconductor device to form a semiconductor drive (solid state drive (SSD)). A semiconductor drive (SSD) includes a storage device configured to store data in a semiconductor memory. When the memory system 1000 is used as a semiconductor drive (SSD), the operation speed of the Host connected to the memory system 1000 is greatly improved.

As another example, the memory system 1000 is provided as a computer, an ultra mobile pc (umpc), a workstation, a netbook, a Personal Digital Assistant (PDA), a portable computer, a network tablet computer, a wireless phone, a mobile phone, a smart phone, an electronic book, a Portable Multimedia Player (PMP), a portable game machine, a navigation device, a black box, a digital camera, a 3-dimensional television, a digital audio recorder, a digital audio player, a digital image recorder, a digital image player, a digital video recorder, and a digital video player, a device capable of transmitting and receiving information in a wireless environment, one of various electronic devices configuring a home network, one of various electronic devices configuring a computer network, one of various electronic devices configuring a remote information network, one of various components of an electronic device of an RFID device, or one of various components configuring a computing system.

As an example of the embodiment, the semiconductor memory apparatus 100 or the memory system 1000 may be mounted as various types of packages. For example, the semiconductor memory device 100 or the memory system 1000 may be packaged and mounted in a method such as a package on package (PoP), a Ball Grid Array (BGA), a Chip Scale Package (CSP), a leaded plastic chip carrier (PLCC), a plastic dual in-line package (PDIP), a waffle pack, a wafer form die, a Chip On Board (COB), a ceramic dual in-line package (CERDIP), a plastic Metric Quad Flat Pack (MQFP), a Thin Quad Flat Pack (TQFP), a Small Outline (SOIC), a Shrink Small Outline Package (SSOP), a Thin Small Outline (TSOP), a System In Package (SIP), a multi-chip package (MCP), a wafer-level manufacturing package (WFP), or a wafer-level processing stack package (WSP).

Fig. 18 is a block diagram showing an application example of the memory system of fig. 17.

Referring to fig. 18, the memory system 2000 includes a semiconductor memory device 2100 and a controller 2200. The semiconductor memory device 2100 includes a plurality of semiconductor memory chips. The plurality of semiconductor memory chips are divided into a plurality of groups.

In fig. 18, a plurality of groups communicate with the controller 2200 through the first to k-th channels CH1 to CHk, respectively. Each semiconductor memory chip is configured and operates similarly to one of the semiconductor memory devices 100 described with reference to fig. 1.

Each group is configured to communicate with the controller 2200 through one common channel. The controller 2200 is configured similarly to the controller 1100 described with reference to fig. 17, and is configured to control the plurality of memory chips of the semiconductor memory apparatus 2100 through the plurality of channels CH1 to CHk.

Fig. 19 is a block diagram illustrating a computing system including the memory system described with reference to fig. 18.

Computing system 3000 includes a central processing device 3100, Random Access Memory (RAM)3200, a user interface 3300, a power supply 3400, a system bus 3500, and a memory system 2000.

The memory system 2000 is electrically connected to the central processing device 3100, the RAM 3200, the user interface 3300, and the power supply 3400 through a system bus 3500. Data provided through the user interface 3300 or processed by the central processing device 3100 is stored in the memory system 2000.

In fig. 19, a semiconductor memory device 2100 is connected to a system bus 3500 through a controller 2200. However, the semiconductor memory device 2100 may be configured to be directly connected to the system bus 3500. At this time, the functions of the controller 2200 are executed by the central processing device 3100 and the RAM 3200.

In fig. 19, a memory system 2000 described with reference to fig. 18 is provided. However, the memory system 2000 may be replaced by the memory system 1000 described with reference to fig. 17. As an example of an implementation, computing system 3000 may be configured to include both memory systems 1000 and 2000 described with reference to fig. 17 and 18.

The embodiments of the present disclosure disclosed in the specification and the drawings are only examples for describing technical contents of the present disclosure and facilitating understanding of the present disclosure, and do not limit the scope of the present disclosure. It is apparent to those skilled in the art to which the present disclosure pertains that other modifications based on the technical spirit of the present disclosure may be made in addition to the embodiments disclosed herein.

Cross Reference to Related Applications

This application claims priority from korean patent application No. 10-2020-0060007, filed on the korean intellectual property office on 19/5/2020, the entire disclosure of which is incorporated herein by reference.