阅读说明：本技术 一种用于磷化铟晶体的制备装置 (Preparation device for indium phosphide crystal ) 是由 潘功寰 于 2021-07-13 设计创作，主要内容包括：本发明涉及一种用于磷化铟晶体的制备装置,包括：平台、以及设置在平台顶部的制备组件；所述制备组件包括上箱体与下箱体,所述上箱体与所述下箱体通过铰接件配合连接,所述上箱体与下箱体内部合围空间设置有制备筒,所述制备筒内部设置有制备腔,所述制备腔内侧沿周向设置有若干个加热管；所述制备筒一端设置有联轴器,所述联轴器贯穿所述制备组件,所述联轴器一端设置有转动机构,所述转动机构能够带动所述制备筒旋转；所述平台一侧设置有操作面板,所述操作面板上设置有显示屏,所述显示屏能够显示制备腔内的画面。(The invention relates to a preparation device for indium phosphide crystals, which comprises the following components: the device comprises a platform and a preparation assembly arranged on the top of the platform; the preparation assembly comprises an upper box body and a lower box body, the upper box body and the lower box body are connected in a matched mode through a hinge piece, a preparation cylinder is arranged in a space enclosed by the inner parts of the upper box body and the lower box body, a preparation cavity is arranged in the preparation cylinder, and a plurality of heating pipes are arranged on the inner side of the preparation cavity along the circumferential direction; a coupler is arranged at one end of the preparation cylinder and penetrates through the preparation assembly, and a rotating mechanism is arranged at one end of the coupler and can drive the preparation cylinder to rotate; an operation panel is arranged on one side of the platform, a display screen is arranged on the operation panel, and the display screen can display pictures in the preparation cavity.)

1. A production apparatus for an indium phosphide crystal, comprising: the device comprises a platform and a preparation assembly arranged on the top of the platform; it is characterized in that the preparation method is characterized in that,

the preparation assembly comprises an upper box body and a lower box body, the upper box body and the lower box body are connected in a matched mode through a hinge piece, a preparation cylinder is arranged in a space enclosed by the inner parts of the upper box body and the lower box body, a preparation cavity is arranged in the preparation cylinder, and a plurality of heating pipes are arranged on the inner side of the preparation cavity along the circumferential direction;

a coupler is arranged at one end of the preparation cylinder and penetrates through the preparation assembly, and a rotating mechanism is arranged at one end of the coupler and can drive the preparation cylinder to rotate;

an operation panel is arranged on one side of the platform, a display screen is arranged on the operation panel, and the display screen can display pictures in the preparation cavity.

2. The manufacturing device for the indium phosphide crystal as set forth in claim 1, wherein an emergency stop button is provided on one side of the platform.

3. The device for preparing the indium phosphide crystal as claimed in claim 1, wherein four corners of the bottom of the platform are provided with support legs, and a shock absorption mechanism is arranged between the support legs and the platform.

4. The manufacturing device of claim 1, wherein the operating panel is provided with a plurality of keys, and the plurality of keys are distributed in an array.

5. The manufacturing device for the indium phosphide crystal as set forth in claim 1, wherein a handle is provided on one side of the upper case.

6. The manufacturing device for indium phosphide crystals as set forth in claim 1, wherein the manufacturing cylinder is of a split structure and comprises an upper cylinder and a lower cylinder, the upper cylinder is connected with the upper box, and the lower cylinder is connected with the lower box.

7. The manufacturing apparatus for an indium phosphide crystal as set forth in claim 6, wherein a sealing layer is provided between the upper barrel and the lower barrel.

8. The manufacturing apparatus for indium phosphide crystals as set forth in claim 1, wherein a heat insulating plate is provided on the lower side of the manufacturing cylinder.

9. The manufacturing device for the indium phosphide crystal as set forth in claim 1, wherein support columns are arranged at four corners of the bottom of the lower box body, and the support columns are fixed to the top of the platform.

Technical Field

The invention relates to a preparation device, in particular to a preparation device for indium phosphide crystals.

Background

Indium phosphide is a chemical substance, is a dark gray crystal with asphalt luster, and the preparation of an indium phosphide single crystal by using a high-pressure single crystal furnace is the most important method, and the dislocation density of the crystal is reduced by using a method of doping electronic impurities. Vapor phase epitaxy generally uses disproportionation of In-PCl3-H2 system, In which indium phosphide (99.9999%) and phosphorus trichloride (99.999%) are reacted to grow indium phosphide layer. And (3) placing the quartz reaction tube in a double-temperature-zone electric furnace by vapor phase epitaxy, introducing purified high-purity hydrogen by metering, wherein the hydrogen is also used for diluting phosphorus trichloride, and the linear velocity of the hydrogen passing through the reaction tube is 14cm/min while the bubbler is kept at 0 ℃. The epitaxial growth is carried out in induction stages. In the first stage, a quartz boat containing indium is placed in a source area of an electric furnace, hydrogen is introduced and heated to 700-850 ℃, and then phosphorus trichloride is introduced by the hydrogen and reduced into phosphorus vapor and hydrogen chloride above the indium source. The cadmium hydride reacts with the indium to form indium monochloride vapor that migrates within the tube. Phosphorus dissolves in indium until saturated. In the second stage, the indium source is kept in situ without heating, and the single crystal substrate is placed in the second heating zone of the electric furnace and then heated to 600-750 ℃ under a hydrogen atmosphere. Firstly, introducing phosphorus trichloride into a tube by using hydrogen to perform gas phase corrosion on a substrate, and cleaning the surface of the substrate. Hydrogen gas is then introduced directly into the reaction tube and the source is heated to its supersaturation temperature (which in operation is 100 c above the temperature of the substrate crystal). Then introducing phosphorus trichloride through hydrogen bubbling, and then reacting phosphorus vapor with indium monochloride generated in the source region to deposit and grow an indium phosphide layer on the substrate. And after the epitaxial growth is finished, introducing pure hydrogen into the system, cooling the two temperature zones to room temperature, and taking out the product to obtain the indium phosphide finished product.

Disclosure of Invention

The invention overcomes the defects of the prior art and provides a preparation device for indium phosphide crystals.

In order to achieve the purpose, the invention adopts the technical scheme that: a production apparatus for an indium phosphide crystal, comprising: the device comprises a platform and a preparation assembly arranged on the top of the platform;

the preparation assembly comprises an upper box body and a lower box body, the upper box body and the lower box body are connected in a matched mode through a hinge piece, a preparation cylinder is arranged in a space enclosed by the inner parts of the upper box body and the lower box body, a preparation cavity is arranged in the preparation cylinder, and a plurality of heating pipes are arranged on the inner side of the preparation cavity along the circumferential direction;

a coupler is arranged at one end of the preparation cylinder and penetrates through the preparation assembly, and a rotating mechanism is arranged at one end of the coupler and can drive the preparation cylinder to rotate;

an operation panel is arranged on one side of the platform, a display screen is arranged on the operation panel, and the display screen can display pictures in the preparation cavity.

In a preferred embodiment of the present invention, an emergency stop button is disposed on one side of the platform.

In a preferred embodiment of the present invention, four corners of the bottom of the platform are provided with support legs, and a damping mechanism is arranged between the support legs and the platform.

In a preferred embodiment of the present invention, the operation panel is provided with a plurality of keys distributed in an array

In a preferred embodiment of the invention, a handle is arranged on one side of the upper box body.

In a preferred embodiment of the present invention, the preparation cylinder is a split structure, and the preparation cylinder comprises an upper cylinder and a lower cylinder, wherein the upper cylinder is connected with the upper box body, and the lower cylinder is connected with the lower box body.

In a preferred embodiment of the present invention, a sealing layer is disposed between the upper tube and the lower tube.

In a preferred embodiment of the invention, a heat insulation plate is arranged on the lower side of the preparation cylinder.

In a preferred embodiment of the present invention, support columns are disposed at four corners of the bottom of the lower box, and the support columns are fixed to the top of the platform.

The invention solves the defects in the background technology, and has the following beneficial effects:

(1) through integrating the preparation facilities to the platform on, reduce preparation facilities occupation space, and can control the preparation facilities through operating panel on the platform, can also show the preparation condition in the preparation section of thick bamboo in real time through the display screen in addition, can more audio-visually observe indium phosphide crystal formation process, make things convenient for the user of service to carry out the preparation temperature or preparation pressure in the adjustment preparation section of thick bamboo in real time, the indium phosphide crystal precision of preparing is higher.

(2) Drive a preparation section of thick bamboo through slewing mechanism and carry out at the uniform velocity or set for speed change curve and carry out variable speed rotation, can make a preparation section of thick bamboo be heated evenly, and the indium phosphide crystal of inside preparation is heated evenly, and a preparation section of thick bamboo is split type structure in addition, when opening last box, goes up the box and drives a section of thick bamboo and open, conveniently puts into a preparation section of thick bamboo with the raw materials of preparation indium phosphide crystal, and it is more nimble convenient to use.

(3) Platform bottom four corners is provided with the stabilizer blade, can prevent through damper on the stabilizer blade that preparation device operation in-process, because of the vibrations that device structure itself caused influence preparation effect or preparation section of thick bamboo rotation, prevent that preparation section of thick bamboo rotation in-process from taking place because of the unstable condition of preparation section of thick bamboo centrifugal force that vibrations caused.

Drawings

The invention is further illustrated with reference to the following figures and examples.

Fig. 1 shows a schematic partial three-dimensional structure of the pesticide mixing and spraying unmanned aerial vehicle of the invention;

FIG. 2 shows a partial cross-sectional view of a preparation assembly;

FIG. 3 shows a partial cross-sectional view of a preparation cylinder;

in the figure: 1. go up box, 2, slewing mechanism, 3, lower box, 4, support column, 5, stabilizer blade, 6, emergency stop button, 7, display screen, 8, button, 9, platform, 10, articulated elements, 11, handle, 12, operating panel, 13, preparation section of thick bamboo, 14, preparation chamber, 15, heating pipe, 16, heat insulating board.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the scope of the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.

FIG. 1 is a schematic partial perspective view of an apparatus for producing an indium phosphide crystal according to the present invention.

As shown in fig. 1 to 3, a first aspect of the present invention provides a production apparatus for an indium phosphide crystal, comprising: a platform 9 and a preparation assembly arranged on top of the platform 9;

the preparation assembly comprises an upper box body 1 and a lower box body 3, the upper box body 1 and the lower box body 3 are connected in a matching mode through a hinge piece 10, a preparation cylinder 13 is arranged in a space enclosed by the inner parts of the upper box body 1 and the lower box body 3, a preparation cavity 14 is arranged in the preparation cylinder 13, and a plurality of heating pipes 15 are arranged on the inner side of the preparation cavity 14 along the circumferential direction;

a coupler is arranged at one end of the preparation cylinder 13 and penetrates through the preparation assembly, a rotating mechanism 2 is arranged at one end of the coupler, and the rotating mechanism 2 can drive the preparation cylinder 13 to rotate;

an operation panel 12 is arranged on one side of the platform 9, a display screen 7 is arranged on the operation panel 12, and the display screen 7 can display pictures in the preparation cavity 14.

It should be noted that, through integrating the preparation facilities to platform 9, reduce preparation facilities occupation space, and can control the preparation facilities through operating panel 12 on platform 9, in addition can also show the preparation condition in preparation section of thick bamboo 13 in real time through display screen 7, can more audio-visual observation indium phosphide crystal formation process, make things convenient for the user to carry out the preparation temperature or the preparation pressure in adjusting preparation section of thick bamboo 13 in real time, the indium phosphide crystal precision of preparation is higher, display screen 7 carries out electric connection with the probe, the probe sets up inside preparation section of thick bamboo 13, the probe can bear high temperature high pressure, the probe can be telescopic structure, when needing to carry out the picture transmission, the probe stretches out, carry out the picture collection, when not needing the picture transmission, the probe is retrieved to inside preparation section of thick bamboo 13.

According to the embodiment of the invention, the emergency stop button 6 is arranged on one side of the platform 9.

It should be noted that an alarm is further arranged on the platform 9, and when the alarm gives an alarm, the emergency stop button 6 can be selected to be pressed down quickly to forcibly stop the operation of the preparation device, so that the operation safety of the preparation device is improved.

According to the embodiment of the invention, the four corners of the bottom of the platform 9 are provided with the support legs 5, and the damping mechanism is arranged between the support legs 5 and the platform 9.

It should be noted that the four corners of the bottom of the platform 9 are provided with the support legs 5, and the damping mechanisms on the support legs 5 can prevent the vibration caused by the structure of the device from influencing the preparation effect or prevent the preparation cylinder 13 from rotating in the operation process of the preparation device, so as to prevent the unstable centrifugal force of the preparation cylinder 13 caused by the vibration in the rotation process of the preparation cylinder 13.

According to the embodiment of the invention, the operation panel 12 is provided with a plurality of keys 8, and the plurality of keys 8 are distributed in an array manner

According to the embodiment of the present invention, a handle 11 is provided at one side of the upper case 1.

According to the embodiment of the invention, the preparation cylinder 13 is of a split structure, the preparation cylinder 13 comprises an upper cylinder and a lower cylinder, the upper cylinder is connected with the upper box body 1, and the lower cylinder is connected with the lower box body 3.

According to the embodiment of the invention, a sealing layer is arranged between the upper barrel and the lower barrel.

It should be noted that, drive a preparation section of thick bamboo 13 through slewing mechanism 2 and carry out at the uniform velocity or set for speed variation curve and carry out variable speed rotation, can make a preparation section of thick bamboo 13 be heated evenly, and the indium phosphide crystal of inside preparation is heated evenly, and a preparation section of thick bamboo 13 is split type structure in addition, when opening last box 1, goes up box 1 and drives a section of thick bamboo and open, conveniently puts into preparation section of thick bamboo 13 with the raw materials of preparing the indium phosphide crystal, and it is more nimble convenient to use.

According to the embodiment of the present invention, the insulation board 16 is provided at the lower side of the preparation cylinder 13.

According to the embodiment of the invention, support columns 4 are arranged at four corners of the bottom of the lower box body 3, and the support columns 4 are fixed to the top of the platform 9.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.