阅读说明：本技术 半导体结构的制造方法及半导体结构 (Method for manufacturing semiconductor structure and semiconductor structure ) 是由 霍炎 周文武 于 2021-08-16 设计创作，主要内容包括：本申请提供一种半导体结构的制造方法及半导体结构。所述制造方法包括：提供待布线结构,待布线结构包括至少一个芯片,芯片具有正面,芯片的正面设有多个焊垫；在芯片的正面形成第一绝缘层,第一绝缘层设有多个开口,每一开口暴露一个焊垫的至少部分；在第一绝缘层背离芯片的一侧形成导电膜层,导电膜层覆盖第一绝缘层背离芯片的表面及焊垫被所述开口暴露的部分,且导电膜层位于第一绝缘层背离芯片一侧的部分的厚度小于导电膜层覆盖焊垫的部分的厚度；将导电膜层超出第一绝缘层的部分去除,得到位于开口内且与焊垫直接接触的导电结构；在第一绝缘层背离芯片的一侧形成再布线结构,再布线结构与导电结构电连接。(The application provides a manufacturing method of a semiconductor structure and the semiconductor structure. The manufacturing method comprises the following steps: providing a structure to be wired, wherein the structure to be wired comprises at least one chip, the chip is provided with a front surface, and the front surface of the chip is provided with a plurality of welding pads; forming a first insulating layer on the front surface of the chip, wherein the first insulating layer is provided with a plurality of openings, and each opening exposes at least part of one welding pad; forming a conductive film layer on one side of the first insulating layer, which is far away from the chip, wherein the conductive film layer covers the surface of the first insulating layer, which is far away from the chip, and the part of the welding pad, which is exposed by the opening, and the thickness of the part, which is located on one side of the first insulating layer, which is far away from the chip is smaller than that of the part, which is covered by the welding pad, of the conductive film layer; removing the part of the conductive film layer, which exceeds the first insulating layer, to obtain a conductive structure which is positioned in the opening and is in direct contact with the welding pad; and forming a rewiring structure on one side of the first insulating layer, which is far away from the chip, wherein the rewiring structure is electrically connected with the conductive structure.)