阅读说明：本技术 测定装置和测定方法 (Measuring apparatus and measuring method ) 是由 冈田修平 田中宏明 于 2020-03-23 设计创作，主要内容包括：测定装置1具备使电磁波入射到试样50的发生部20、接收在试样50反射的电磁波的接收部30、对发生部20和接收部30进行控制的控制部10。试样50具有电磁波所入射的第一层51和层叠于第一层51的第二层52。控制部10基于从发生部20入射到试样50的电磁波和接收部30所接收的电磁波,检测出第一层51与第二层52之间是否存在第三层53。发生部20以电磁波在第一层51与第三层53之间或者第一层51与第二层52之间的至少一方发生全反射的入射角使电磁波入射。(The measurement device 1 includes a generation unit 20 that causes electromagnetic waves to enter a sample 50, a reception unit 30 that receives electromagnetic waves reflected by the sample 50, and a control unit 10 that controls the generation unit 20 and the reception unit 30. The sample 50 includes a first layer 51 on which electromagnetic waves are incident and a second layer 52 laminated on the first layer 51. The control unit 10 detects whether or not the third layer 53 is present between the first layer 51 and the second layer 52 based on the electromagnetic wave incident on the sample 50 from the generation unit 20 and the electromagnetic wave received by the reception unit 30. The generator 20 causes the electromagnetic wave to enter at an incident angle at which the electromagnetic wave is totally reflected between the first layer 51 and the third layer 53 or between the first layer 51 and the second layer 52.)

1. A measurement device is characterized by comprising:

a generation unit that causes an electromagnetic wave to be incident on a sample;

a receiving unit that receives the electromagnetic wave reflected by the sample;

a control unit that controls the generation unit and the reception unit;

the sample has a first layer on which the electromagnetic wave is incident and a second layer laminated on the first layer,

the control unit detects whether or not the third layer is present between the first layer and the second layer based on the electromagnetic wave incident from the generation unit to the sample and the electromagnetic wave received by the reception unit,

the generation unit makes the electromagnetic wave incident at an incident angle at which the electromagnetic wave is totally reflected between the first layer and the third layer or between the first layer and the second layer.

2. The assay device according to claim 1,

the first layer and the second layer are provided with a displacement portion that displaces at least one of the first layer and the second layer in a direction away from the other.

3. The assay device according to claim 2,

the displacement section vibrates at least one of the first layer and the second layer.

4. The assay device according to claim 2,

the displacement portion applies a force in a direction away from at least one of the first layer and the second layer.

5. The assay device according to any one of claims 1 to 4,

the control unit calculates an area of contact between the first layer and the third layer based on the electromagnetic wave incident from the generation unit to the sample and the electromagnetic wave received by the reception unit.

6. The assay device according to any one of claims 1 to 5,

the control unit calculates the thickness of the third layer based on the electromagnetic wave incident on the sample from the generation unit and the electromagnetic wave received by the reception unit.

7. The assay device according to any one of claims 1 to 4,

the control unit simultaneously calculates an area of contact between the first layer and the third layer and a thickness of the third layer based on the electromagnetic wave incident from the generation unit to the sample and the electromagnetic wave received by the reception unit.

8. The assay device according to any one of claims 1 to 7,

the optical device further includes at least one of an incident angle adjusting unit located between the generating unit and the first layer and an exit angle adjusting unit located between the receiving unit and the first layer.

9. A method of measurement, comprising:

a step of causing electromagnetic waves to enter a sample having a first layer and a second layer stacked on each other from the first layer;

a step of receiving an electromagnetic wave reflected by the sample;

a step of detecting whether or not a third layer is present between the first layer and the second layer based on the electromagnetic wave incident to the sample in the step of making the electromagnetic wave incident and the electromagnetic wave received in the step of receiving the electromagnetic wave;

in the step of making the electromagnetic wave incident, the electromagnetic wave is made incident on the first layer at an incident angle at which total reflection occurs between at least one of the first layer and the third layer or between the first layer and the second layer.

Technical Field

The present disclosure relates to an assay device and an assay method.

Background

Conventionally, a method of measuring a bonding state between layers by measuring reflection or transmission of a terahertz wave in a sample having a plurality of layers is known (for example, see patent document 1).

Documents of the prior art

Patent document

Patent document 1: japanese patent No. 5684819

Disclosure of Invention

Technical problem to be solved by the invention

It is desired to improve the measurement accuracy of the bonding state between layers.

The purpose of the present disclosure is to provide a measurement device and a measurement method that can improve the measurement accuracy of the bonding state between layers.

Technical solution for solving technical problem

A measurement device according to some embodiments includes: a generation unit that causes an electromagnetic wave to be incident on a sample; a receiving unit that receives the electromagnetic wave reflected by the sample; a control unit that controls the generation unit and the reception unit; the sample has a first layer on which the electromagnetic wave is incident and a second layer laminated on the first layer, the control unit detects whether or not the third layer is present between the first layer and the second layer based on the electromagnetic wave incident on the sample from the generation unit and the electromagnetic wave received by the reception unit, and the generation unit causes the electromagnetic wave to be incident at an incident angle at which the electromagnetic wave is totally reflected between the first layer and the third layer or between the first layer and the second layer. In this way, the third layer located in the vicinity of the interface between the first layer and the second layer can be detected with the resolution of the depth equal to or less than the wavelength of the electromagnetic wave by the evanescent wave (near-field light) locally existing in the wavelength range of the electromagnetic wave. As a result, the accuracy of measurement of the bonding state between the layers is improved.

The measurement device according to one embodiment may further include a displacement unit configured to displace at least one of the first layer and the second layer in a direction away from the other. In this way, the measurement device can determine whether the state of the sample is the full-surface contact state or the adhesion state. As a result, the accuracy of measurement of the bonding state between the layers is improved.

In the measurement device according to one embodiment, the displacement unit may vibrate at least one of the first layer and the second layer. Thus, the measuring apparatus can discriminate whether the state of the sample is the full-surface contact state or the adhesion state with a simple configuration. As a result, the accuracy of measurement of the bonding state between the layers is improved.

In the measurement device according to one embodiment, the displacement unit may apply a force in a direction away from at least one of the first layer and the second layer. Thus, the accuracy of determining whether the state of the sample is the full-surface contact state or the adhesion state is improved. As a result, the accuracy of measurement of the bonding state between the layers is improved.

In the measurement device according to one embodiment, the control unit may calculate an area where the first layer and the third layer are in contact with each other based on the electromagnetic wave incident on the sample from the generation unit and the electromagnetic wave received by the reception unit. Thus, the detection accuracy of the third layer is improved. As a result, the accuracy of measurement of the bonding state between the layers is improved.

In the measurement device according to one embodiment, the control unit may calculate the thickness of the third layer based on the electromagnetic wave incident on the sample from the generation unit and the electromagnetic wave received by the reception unit. Thus, the detection accuracy of the third layer is improved. As a result, the accuracy of measurement of the bonding state between the layers is improved.

In the measuring apparatus according to one embodiment, the control unit may calculate an area in which the first layer and the third layer are in contact and a thickness of the third layer at the same time based on the electromagnetic wave incident on the sample from the generating unit and the electromagnetic wave received by the receiving unit. Thus, the time taken for the detection of the third layer is shortened.

The measurement device according to one embodiment may further include at least one of an incident angle adjustment unit located between the generation unit and the first layer and an emission angle adjustment unit located between the reception unit and the first layer. The measuring apparatus includes an incident angle adjusting unit, and can easily satisfy the total reflection condition for the incident angle to the first layer with a simple configuration. The measurement device is provided with an emission angle adjustment unit, thereby reducing the loss of electromagnetic waves.

The assay of some embodiments comprises: a step of causing an electromagnetic wave to enter a sample having the first layer and the second layer stacked; a step of receiving an electromagnetic wave reflected by the sample; a step of detecting whether or not the third layer is present between the first layer and the second layer based on the electromagnetic wave incident to the sample in the step of making the electromagnetic wave incident and the electromagnetic wave received in the step of receiving the electromagnetic wave; in the step of making the electromagnetic wave incident, the electromagnetic wave is made incident on the first layer at an incident angle at which total reflection occurs between at least one of the first layer and the third layer or between the first layer and the second layer. As described above, evanescent waves (near-field light) locally existing in the wavelength range of electromagnetic waves can detect the depth of the electromagnetic waves at a wavelength or less, that is, the state near the interface between the first layer and the second layer, with the resolution of the depth at a wavelength or less. As a result, the accuracy of measurement of the bonding state between the layers is improved.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present disclosure, a measurement device and a measurement method capable of improving the measurement accuracy of the bonding state between layers can be provided.

Drawings

Fig. 1 is a block diagram showing an example of the configuration of a measurement device according to an embodiment.

Fig. 2 is a cross-sectional view showing an example of the configuration of a measuring apparatus according to an embodiment.

Fig. 3 is a cross-sectional view showing total reflection between the first layer and the second layer.

Fig. 4 is a graph showing an example of an absorption spectrum of a sample.

Fig. 5 is a cross-sectional view showing total reflection between the first layer and the third layer.

Fig. 6 is a graph showing an example of the absorption spectrum of the first layer.

Fig. 7 is a cross-sectional view showing an example of a structure in which total reflection of an electromagnetic beam occurs in the second layer and the third layer arranged in the in-plane direction of the sample.

Fig. 8 is a graph showing an example of the total reflection absorption spectrum measured in the configuration example of fig. 7.

Fig. 9 is a cross-sectional view showing an example of a structure in which evanescent field penetration is performed over a third layer and a second layer arranged in the depth direction of a sample.

Fig. 10 is a graph showing an example of the total reflection absorption spectrum measured by the configuration example of fig. 9.

Fig. 11 is a plan view showing an example of scanning a sample in an in-plane direction.

Fig. 12 is a flowchart showing an example of the flow of the measurement method according to the embodiment.

Fig. 13 is a flowchart showing an example of a flow of detecting the third layer.

Fig. 14 is a graph showing an example of the total reflection absorption spectrum measured when the displacement unit displaces the first layer.

Fig. 15 is a flowchart showing an example of a flow of detecting the third layer while shifting the first layer.

Fig. 16 is a cross-sectional view showing an example of the travel of an electromagnetic wave in the case where the refractive index of the first layer is smaller than that of the second layer.

Detailed Description

Comparative example

Various methods can be conceived for measuring a sample. As a comparative example, the amount of the functional group contained in the sample can be measured by, for example, infrared light (IR: Infra Red). However, since IR is easily absorbed by a substance, it is easy to use IR for measurement on the surface or near the surface of a sample, and conversely, it is difficult to use IR for measurement inside a sample. Therefore, IR is difficult to use for measuring the bonding state between a plurality of layers included in a sample.

As a comparative example, for example, voids present in the sample can be measured by X-ray, ultrasonic wave, or laser ultrasonic wave. However, X-rays have a problem of exposure risk and require large-scale equipment. Ultrasonic waves or laser ultrasonic waves have a problem that the depth resolution is in the order of several hundreds of μm depending on the measurement conditions. Since the bonding strength between a plurality of layers included in a sample is lowered due to a void of several μm level, and the depth resolution is low, it is difficult to use X-ray, ultrasonic wave, or laser ultrasonic wave for measuring the bonding state between the layers.

As a comparative example, the thickness of each layer in the sample including the base material and the bonding layer can be measured by analyzing the time waveform of the reflection of the terahertz wave, for example. However, when the pulse width of the terahertz wave is about 1psec (picosecond), if the interval between the layers is not several hundred μm or more, it is impossible to distinguish whether the reflected wave is reflected by the surface of the base material or reflected by the bonding interface. That is, the depth resolution of the reflected wave is low. Since the bonding strength between a plurality of layers included in a sample is lowered due to a gap of several μm level, and the method has only low depth resolution, the method of time waveform analysis of the reflection of terahertz waves is difficult to use for measuring the bonding state between layers.

As described above, according to the comparative example conceivable for measuring a sample, there are problems that the depth resolution of the measurement is on the order of 100 μm or more or there is a risk related to safety. In order to measure the bonding state between layers with high accuracy, it is necessary to be able to measure a sample with high depth resolution. Furthermore, it is necessary to be able to measure safely.

Therefore, the present disclosure describes a measurement device 1 (see fig. 1) and a measurement method that can measure the bonding state between layers with high accuracy without increasing the risk of safety.

(embodiment mode)

As shown in fig. 1 and 2, a measurement device 1 according to one embodiment of the present disclosure includes a control unit 10, a generation unit 20, and a reception unit 30. The measuring apparatus 1 generates an electromagnetic wave in the generating section 20, and causes the electromagnetic wave to enter the sample 50. The electromagnetic wave is reflected by the sample 50 and enters the receiving unit 30. The measuring apparatus 1 receives the electromagnetic wave reflected by the receiving unit 30 and the sample 50, and detects the intensity thereof. The measurement device 1 measures information related to the sample 50 based on the intensity of the electromagnetic wave generated by the generation unit 20 and the intensity of the electromagnetic wave received by the reception unit 30.

The generation section 20 can generate a terahertz wave as an electromagnetic wave. Terahertz waves are electromagnetic waves having a frequency between 0.1THz and 10 THz. The generation section 20 may generate millimeter waves as electromagnetic waves. Millimeter waves are electromagnetic waves having a wavelength between 1mm and 10 mm. The terahertz wave or the millimeter wave is easily transmitted to the inside of the sample 50 compared to the IR. The terahertz waves or millimeter waves transmitted through the sample 50 contain information relating to the absorption spectrum of the material contained in the sample 50. Terahertz waves or millimeter waves do not cause exposure risks such as X-rays. The generator 20 is also referred to as a generator.

The receiving unit 30 can receive the electromagnetic wave totally reflected by the sample 50 and detect the intensity thereof. That is, the measuring apparatus 1 can analyze the sample 50 based on the intensity of the electromagnetic wave totally reflected. The measuring apparatus 1 can analyze the sample 50 by, for example, an atr (extensive Total reflection) method. According to the ATR method, the measurement device 1 can analyze information of a region of an electromagnetic wave from a total reflection surface to a depth shorter than a wavelength. That is, the measurement device 1 can analyze information in a depth region shorter than the wavelength, that is, in the vicinity of the interface, in the sample 50. In the case where the electromagnetic wave is a terahertz wave, information in the depth direction of the sample 50 can be analyzed on the order of several μm to several hundreds μm. In the case where the electromagnetic wave is a millimeter wave, information in the depth direction of the sample 50 can be analyzed on the order of several hundreds of μm to several mm. The receiving section 30 is also referred to as a receiver.

The measuring apparatus 1 may further include a displacement unit 40. The displacement unit 40 displaces at least a part of the sample 50 as described later. The displacement unit 40 may include a structure that applies an external force such as a traction force to the sample 50, for example. The displacement unit 40 may include a structure for imparting vibration to the sample 50, for example. The measurement device 1 can analyze information of the sample 50 in a state where at least a part of the sample 50 is deformed by the displacement unit 40.

The control unit 10 acquires information from each component of the measurement device 1 and controls each component. The control unit 10 may include a processor such as a cpu (central Processing unit). The control unit 10 can implement various functions of the measurement device 1 by executing a predetermined flow.

The measurement device 1 may further include a storage unit 12. The storage unit 12 may store various information used for the operation of the measurement apparatus 1, a flow for realizing the function of the measurement apparatus 1, and the like. The storage unit 12 can function as a work memory of the control unit 10. The storage unit 12 may be formed of, for example, a semiconductor memory. The storage unit 12 may be included in the control unit 10.

The measurement device 1 may further include a User Interface (UI) 14. The UI14 accepts user operation input, and may include a pointing device such as a mouse, a physical key, or an input device such as a touch panel. The UI14 may include a presentation device such as a display screen or light emitting elements that present information to be communicated to the user. The UI14 may comprise a sound device such as a speaker for emitting sound for informing the user of information. The UI14 is not limited to the example device and may include a variety of devices.

The measuring apparatus 1 may include a housing 2 that holds the generating unit 20 and the receiving unit 30. The measurement device 1 may include a tire 3 so that the surface of the sample 50 can be moved. The tyre 3 may be replaced by other moving members. The moving member may be constituted by a combination of a guide rail and a servo motor or a linear motor, for example. The moving member is not limited thereto, and may be replaced with other various members. The measuring apparatus 1 may further include an incident angle adjusting unit 22 located between the generating unit 20 and the sample 50. The measuring apparatus 1 may further include an emission angle adjusting unit 32 located between the receiving unit 30 and the sample 50.

Sample 50 has a first layer 51, a second layer 52, and a substrate 55. The first and second layers 51, 52 and the substrate 55 are laminated. The first layer 51 is also referred to as a parent material. The second layer 52 joins the first layer 51 (base material) and the base material 55. The second layer 52 is also referred to as a bonding layer. The first layer 51 and the substrate 55 may be made of, for example, glass, but are not limited thereto. The second layer 52 may be an adhesive made of resin or the like, but is not limited thereto and may be made of various materials.

The first layer 51 and the second layer 52 are in contact at least at a portion. On the other hand, a part between the first layer 51 and the second layer 52 can have a void. The voids are represented as third layer 53. Voids are likely to be generated when the bonding strength between the first layer 51 and the second layer 52 is low. Conversely, by having a gap between the first layer 51 and the second layer 52, the bonding strength between the first layer 51 and the second layer 52 becomes low. The refractive index of the first layer 51 is denoted by n 1. The refractive index of the second layer 52 is denoted by n 2. The refractive index of the third layer 53 is denoted by n 3. The refractive index of the air filled voids can be regarded as 1. Therefore, the refractive index (n3) of the third layer 53 is regarded as 1. In the present embodiment, it is assumed that the refractive index (n1) of the first layer 51 is larger than the refractive index (n2) of the second layer 52. That is, it is assumed that n1 > n2 holds. The third layer may be, for example, water, oil, or other substances other than air.

The electromagnetic wave incident on the sample 50 from the generating section 20 is referred to as an incident electromagnetic wave 61. The incident electromagnetic wave 61 is incident on the first layer 51. The incident angle of the incident electromagnetic wave 61 is expressed as an angle between the normal direction of the surface of the first layer 51 and the traveling direction of the incident electromagnetic wave 61. The incident electromagnetic wave 61 incident to the first layer 51 is reflected at the surface of the second layer 52 or the surface of the third layer 53. The electromagnetic wave reflected at the surface of the second layer 52 or the surface of the third layer 53 is referred to as a reflected electromagnetic wave 63. The reflected electromagnetic wave 63 is emitted from the first layer 51 toward the receiving unit 30.

When n1 > n2 is satisfied, the electromagnetic wave is totally reflected at the interface between the first layer 51 and the second layer 52 by being incident from the first layer 51 to the second layer 52 at an angle greater than the critical angle. A critical angle indicating a total reflection condition in a case where an electromagnetic wave is incident from the first layer 51 to the second layer 52 is represented by θ C12. Between the refractive indices of the first layer 51 and the second layer 52 and the critical angle, the relationship sin θ C12 — n2/n1 holds.

The incident angle adjusting section 22 adjusts the incident angle so that the incident angle of the incident electromagnetic wave 61 satisfies the total reflection condition. The refractive index of the incident angle adjusting part 22 may be greater than that of the first layer 51. In this way, the angle between the traveling direction of the electromagnetic wave incident on the first layer 51 from the incident angle adjusting portion 22 and the normal direction of the first layer 51 is larger than the angle between the traveling direction of the electromagnetic wave in the incident angle adjusting portion 22 and the normal direction of the first layer 51. As a result, the incident angle of the electromagnetic wave 61 from the first layer 51 to the second layer 52 or the third layer 53 is likely to be larger than the incident angle from the incident angle adjusting unit 22 to the first layer 51. The incident angle adjusting unit 22 may have a hemispherical surface as an incident surface on which the electromagnetic wave is incident from the generating unit 20. When the electromagnetic wave is incident perpendicularly or substantially perpendicularly to the hemispherical incident surface, the loss due to reflection of the electromagnetic wave on the incident surface can be reduced. Further, since the electromagnetic wave traveling in various directions can be incident perpendicularly or substantially perpendicularly to the hemispherical incident surface, the measurement device 1 can easily control the incident angle of the incident electromagnetic wave 61 incident from the first layer 51 to the second layer 52 or the third layer 53 over a wide range. As a result, the incident angle of the incident electromagnetic wave 61 with respect to the first layer 51 can easily satisfy the total reflection condition at the interface of the second layer 52 or the third layer 53 by a simple configuration.

The emission angle adjusting unit 32 adjusts the traveling direction of the reflected electromagnetic wave 63 so that the reflected electromagnetic wave 63 can propagate to the receiving unit 30. The refractive index of the exit angle adjusting part 32 may be larger than that of the first layer 51. In this way, the traveling direction of the reflected electromagnetic wave 63 traveling from the first layer 51 toward the exit angle adjusting section 32 is closer to the normal direction of the first layer 51. As a result, the receiving unit 30 easily receives the reflected electromagnetic wave 63. The emission angle adjusting unit 32 may have a hemispherical shape on the side where the electromagnetic wave is emitted to the receiving unit 30. In this way, the reflected electromagnetic wave 63 can be received by the receiving unit 30 regardless of the direction in which it travels, and therefore the exit angle of the electromagnetic wave exiting from the surface of the exit angle adjusting unit 32 can be reduced. As a result, the loss of the electromagnetic wave on the surface of the output angle adjusting section 32 can be reduced.

The measuring apparatus 1 may fill the space between the surface of the first layer 51 and the incident angle adjusting section 22 and the exit angle adjusting section 32 with a liquid having a refractive index higher than that of air. Thus, the electromagnetic wave is easily incident on the first layer 51 from the incident angle adjusting portion 22, and is easily emitted from the first layer 51 to the exit angle adjusting portion 32. The liquid may, for example, comprise water, but may also comprise a high refractive index liquid. The measuring apparatus 1 may fill the space between the surface of the first layer 51 and the generating section 20 and the receiving section 30 with a liquid having a refractive index higher than that of air. Thus, the measurement device 1 can easily adjust the incident angle without providing the incident angle adjusting unit 22 and the emission angle adjusting unit 32.

As illustrated in fig. 3, in the case where the electromagnetic wave is totally reflected at the surface of the second layer 52, the electromagnetic wave seeps out as an evanescent wave 62 from the surface of the second layer 52 to a prescribed depth range. The prescribed depth to which evanescent wave 62 has oozed is also referred to as the oozing depth. The incident electromagnetic wave 61 is converted into a reflected electromagnetic wave 63 via the state of evanescent wave 62. The intensity of evanescent wave 62 decays exponentially with respect to the depth from the surface of second layer 52. The depth of the evanescent wave 62 to bleed may be a depth that is the inverse of the natural logarithm of the intensity of the evanescent wave 62. In the case where the natural logarithm is denoted by e, the depth of the bleed may be a depth that is 1/e times the intensity of evanescent wave 62.

Electromagnetic waves are attenuated by interaction with matter. That is, the electromagnetic wave is absorbed by the substance. The absorption rate of the electromagnetic wave differs depending on the frequency of the electromagnetic wave. The relationship between the frequency and the absorption rate of the electromagnetic wave at each frequency is represented as an absorption spectrum. The absorption spectrum is determined based on physical parameters such as the composition or density of a substance that absorbs electromagnetic waves, or the bonding state of atoms or molecules in the substance.

The incident electromagnetic wave 61 and the reflected electromagnetic wave 63 are absorbed in the first layer 51 based on the absorption spectrum of the first layer 51. The absorption rate of the electromagnetic wave in the first layer 51 increases corresponding to the distance of the electromagnetic wave through the first layer 51. The larger the incident angle of the electromagnetic wave, the longer the distance of the electromagnetic wave through the first layer 51 increases. As a result, the absorption rate of the absorption spectrum included in the first layer 51 increases.

Evanescent wave 62 is absorbed at second layer 52 based on the absorption spectrum of second layer 52. In the case where the electromagnetic wave is totally reflected at the second layer 52, the absorption spectrum of the second layer 52 is also referred to as a total reflection absorption spectrum of the second layer 52. The difference between the spectrum of the electromagnetic wave incident on the sample 50 from the generating unit 20 and the spectrum of the electromagnetic wave received by the receiving unit 30 corresponds to the absorption spectrum of the sample 50. The absorption spectrum of the sample 50 includes the absorption spectrum of the first layer 51 and the total reflection absorption spectrum of the second layer 52.

An example of the absorption spectrum of the sample 50 is shown as a graph in fig. 4. In the graph of fig. 4, the horizontal axis represents the frequency of the electromagnetic wave. The vertical axis represents the absorption rate of the electromagnetic wave in each frequency. The absorption spectrum of the sample 50 is shown by a solid line. The absorption spectrum of the first layer 51 is indicated by a dashed line. The total reflection absorption spectrum of the second layer 52 is indicated by a chain line. The absorption spectrum of the first layer 51 has a peak at a first frequency denoted by v 1. The total reflection absorption spectrum of the second layer 52 has a peak at the second frequency denoted by v 2. The absorption spectrum of the sample 50 has peaks at v 1 and v 2.

The absorption spectrum of the sample 50 is represented as the sum of the absorption spectrum of the first layer 51 and the total reflection absorption spectrum of the second layer 52. The absorptance at each frequency in the sample 50 can be expressed as the sum of the absorptance at each frequency in the first layer 51 and the absorptance at each frequency in the second layer 52. When the absorption spectrum of the first layer 51 is known, the measurement apparatus 1 can calculate the total reflection absorption spectrum of the second layer 52 as the difference between the measurement result of the absorption spectrum of the sample 50 and the absorption spectrum of the first layer 51. The absorption spectrum of the first layer 51 is also referred to as a reference spectrum. The measurement device 1 may acquire a reference spectrum from a material database or the like in advance. The measurement device 1 may acquire an absorption spectrum obtained by total reflection of the electromagnetic wave at the interface between the first layer 51 and the air as a reference spectrum. The measurement device 1 can correct the reference spectrum based on the incident angle of the electromagnetic wave. The measuring apparatus 1 can acquire a reference spectrum corresponding to the incident angle of each electromagnetic wave. The measuring apparatus 1 can store the incident angle of the electromagnetic wave and the reference spectrum corresponding to the incident angle in the storage unit 12 as a table. The reference spectrum may be corrected in response to the thickness of the first layer 51.

In the case where the third layer 53 is present between the first layer 51 and the second layer 52, electromagnetic waves are incident from the first layer 51 to the third layer 53The method is described. The electromagnetic wave is incident on the third layer 53 from the first layer 51 at an angle larger than the critical angle, and is totally reflected at the interface between the first layer 51 and the third layer 53. The critical angle θ representing the total reflection condition of the electromagnetic wave incident from the first layer 51 to the third layer 53_C13And (4) showing. Between the refractive index and the critical angle of the first layer 51, sin θ_C13The relationship 1/n1 holds.

As shown in the example of fig. 5, in the case where the electromagnetic wave is totally reflected at the surface of the third layer 53, the electromagnetic wave seeps out as an evanescent wave 62 in a range from the surface of the third layer 53 to a prescribed depth. Evanescent wave 62 is absorbed at third layer 53 based on the absorption spectrum inherent to third layer 53. When the third layer 53 is a void, the absorption of electromagnetic waves in the third layer 53 is so small as to be invisible as compared with the absorption of electromagnetic waves in each of the first layer 51 and the second layer 52. Therefore, when the electromagnetic wave is totally reflected on the surface of the third layer 53, the absorption spectrum of the sample 50 is represented by the absorption spectrum of only the first layer 51 as shown in fig. 6. The horizontal and vertical axes of the graph of fig. 6 are the same as those of the graph of fig. 4.

When the spectrum shown in the graph of fig. 4 is obtained as the absorption spectrum of the sample 50, the measurement device 1 can determine that the electromagnetic wave is totally reflected by the second layer 52. When the measurement device 1 can obtain a spectrum shown in the graph of fig. 6 as the absorption spectrum of the sample 50, it can determine that the electromagnetic wave is totally reflected by the third layer 53. That is, the measurement device 1 can determine whether or not the third layer 53 is present in a portion that totally reflects the electromagnetic wave based on the measurement result of the absorption spectrum of the sample 50.

The measurement device 1 can calculate absorptance at each frequency included in a predetermined range and calculate an absorption spectrum of the sample 50 as a measurement result. The measurement device 1 can calculate the absorptance at a predetermined frequency as a measurement result. For example, the measurement device 1 may calculate the absorbance at the second frequency indicated by ν 2 as the measurement result. The measurement device 1 can determine whether or not the third layer 53 is present based on the absorptance at a predetermined frequency.

As described above, the measurement device 1 of the present embodiment determines the presence or absence of the third layer 53 based on the reflected absorption spectrum specified by the absorbance of the evanescent wave 62 in the second layer 52. Thus, the extent of the exudation depth of evanescent wave 62, i.e., the presence of third layer 53 in the depth region below the wavelength of the electromagnetic wave, is detected. As a result, the accuracy of measuring the bonding state between the first layer 51 and the second layer 52 is improved. Also, since the refractive index of the first layer 51 is greater than that of the second layer 52, the incident electromagnetic wave 61 is totally reflected regardless of the presence or absence of the third layer 53. Thereby, the intensity of the reflected electromagnetic wave 63 increases. As a result, the measurement device 1 can calculate the reflection/absorption spectrum with high accuracy and can detect the presence of the third layer 53 with high accuracy.

< calculation of area and thickness of void >

The electromagnetic wave incident on the sample 50 in the measurement device 1 has a predetermined diffusion range. An electromagnetic wave having a predetermined spread range is represented as an electromagnetic beam 60 as illustrated in fig. 7. The electromagnetic beam 60 enters the sample 50, is totally internally reflected, and is emitted from the sample 50. The electromagnetic beam 60, when incident on the second layer 52 or the third layer 53 and totally reflected, generates an evanescent field 64 at the surface of the second layer 52 or the third layer 53. The surface of the first layer 51 and the surface of the second layer 52 are parallel. In this case, the area of the region where evanescent field 64 is generated is equal to the incident area and the exit area of electromagnetic beam 60 from the surface of first layer 51.

The absorption spectrum of the sample 50 of the electromagnetic beam 60 is determined based on the ratio of the electromagnetic wave totally reflected by the second layer 52 and the electromagnetic wave totally reflected by the third layer 53. For example, as shown in FIG. 7, where evanescent field 64 spreads across second layer 52 and third layer 53, the absorption spectrum of electromagnetic beam 60 is determined based on the ratio of the areas of evanescent field 64 that spread at second layer 52 and third layer 53, respectively. The areas of evanescent field 64 spreading at second layer 52 and third layer 53, respectively, are denoted a1 and a 2. The sum of a1 and a2 corresponds to the area over which electromagnetic beam 60 spreads. For example, the absorption rate of the case where evanescent field 64 diffuses across second layer 52 and third layer 53 for an electromagnetic wave having frequency ν 2 is a1/(a1+ a2) times as high as the absorption rate of the case where evanescent field 64 diffuses only in second layer 52. The case where evanescent field 64 only diffuses in second layer 52 is referred to as ref. The case where evanescent field 64 spreads across second layer 52 and third layer 53 is referred to as case 1. That is, the absorptivity of case1 of the electromagnetic wave having the frequency ν 2 with respect to ref is a1/(a1+ a2) times.

Not only the electromagnetic wave of the frequency ν 2, but also the absorption of case1 with respect to ref is a1/(a1+ a2) times for electromagnetic waves of other frequencies. As illustrated in fig. 8, the total reflection absorption spectrum of case1 can be represented as a spectrum in which the total reflection absorption spectrum of ref is distorted by a factor of a1/(a1+ a2) in the vertical axis direction. The horizontal and vertical axes of the graph of fig. 8 are the same as those of the graph of fig. 4. The total reflection absorption spectrum of ref is the same as that of the second layer 52 shown in fig. 4.

The absorption spectrum of electromagnetic beam 60 is determined based on the ratio of A1 and A2. That is, the measurement device 1 can calculate the ratio of a1 to a2 based on the measurement result of the absorption spectrum of the electromagnetic beam 60. As a result, the measuring apparatus 1 can not only detect whether or not the third layer 53 is present between the first layer 51 and the second layer 52, but also accurately calculate the area over which the third layer 53 spreads. When a1 is assumed to be 0, the measurement apparatus 1 can calculate the diffusion area of the electromagnetic beam 60 as the diffusion area of the third layer 53. The diffusion area of the third layer 53 corresponds to the area where the first layer 51 and the third layer 53 are in contact.

As shown in fig. 9, in the case where the thickness of the third layer 53 is smaller than the exudation depth of the evanescent wave 62, the absorption spectrum of the electromagnetic wave is affected by the absorption of the second layer 52. The depth of exudation of evanescent wave 62, for example an electromagnetic wave of frequency v 2, is denoted by D. The thickness of the third layer 53 is indicated by D1. In the case where D is greater than D1, evanescent wave 62 seeps out to second layer 52. In the case where evanescent wave 62 seeps into second layer 52, the seepage depth is denoted by D2. D2 was calculated as the difference between D and D1.

The intensity of evanescent wave 62 decreases exponentially with respect to the depth from the surface of third layer 53. The higher the frequency of the electromagnetic wave, the more easily the intensity of evanescent wave 62 decreases. The more easily the intensity of evanescent wave 62 decreases, the smaller the depth of exudation of evanescent wave 62 becomes. The depth of the evanescent wave 62 bleed can be expressed as a function of the frequency of the electromagnetic wave. The depth to which evanescent wave 62 bleeds into second layer 52 varies based on the frequency of the electromagnetic wave, depending on the depth of the bleed as a function of frequency. Evanescent wave 62 is also present to second layer 52 without bleeding.

The absorption rate of the electromagnetic wave is determined based on the depth to which evanescent wave 62 seeps into second layer 52. The total reflection absorption spectrum in the case where evanescent wave 62 seeps across third layer 53 and second layer 52 arranged in the depth direction corresponds to the case where the absorptance of the total reflection absorption spectrum of second layer 52 is changed at a predetermined magnification for each frequency. The case where evanescent wave 62 seeps across third layer 53 and second layer 52 arranged in the depth direction is referred to as case 2. Fig. 10 illustrates a total reflection absorption spectrum of case 2. The horizontal and vertical axes of the graph of fig. 8 are the same as those of the graph of fig. 4. The total reflection absorption spectrum of ref and case1 is the same spectrum as that of ref and case1 shown in fig. 8.

The graph of fig. 10 is normalized in such a manner that the absorption rate of the electromagnetic wave having the frequency ν 2 is consistent between the case1 and the case 2. At frequencies higher than ν 2, since the depth of exudation of the evanescent wave 62 becomes small, the absorption rate of the case2 becomes smaller than that of the case 1. On the other hand, in the frequency lower than ν 2, since the exudation depth of the evanescent wave 62 becomes large, the absorption rate of the case2 becomes larger than that of the case 1. The magnification of the absorption rate with respect to ref in each frequency is different in case1 and case 2. The measurement apparatus 1 can calculate the thickness of the third layer 53 and the area of the third layer 53 based on the magnification of the absorptance with respect to the ref absorptance at each frequency. The measuring apparatus 1 can calculate the thickness of the third layer 53 and the area of the third layer 53 at the same time based on one total reflection absorption spectrum. As described above, the change in the absorptance according to the area size of the third layer 53 does not have frequency dependency. The change in the absorbance corresponding to the thickness of the third layer 53 has frequency dependency. By considering the presence or absence of frequency dependence, the area and thickness of the third layer 53 can be calculated simultaneously in a predetermined measurement region where the electromagnetic beam 60 is incident. By calculating the area and the thickness of the third layer 53 at the same time, the time required for detecting the third layer 53 can be shortened. In addition, the third layer 53 has a different thickness in a microscopic field in a predetermined measurement region. The measuring apparatus 1 can calculate the average value of the thickness of the third layer 53 in a predetermined measurement region.

The measuring apparatus 1 can improve the detection accuracy of the third layer 53 by calculating the area or thickness of the third layer 53. As a result, the measuring apparatus 1 can improve the measurement accuracy of the joined state of the first layer 51 and the second layer 52.

< scanning of the surface of the sample 50 >

As shown in fig. 11, the measurement device 1 can scan an electromagnetic beam 60 having a predetermined spread range along the surface of the sample 50. By scanning the surface of the sample 50 with the electromagnetic beam 60, the measurement apparatus 1 can calculate the distribution of the third layer 53 in the surface of the sample 50. The measurement device 1 can accurately calculate the diffusion area of the third layer 53 in the plane of the sample 50. The measurement device 1 can also calculate the distribution of the thickness of the third layer 53 in the plane of the sample 50. The measuring apparatus 1 can map the distribution of the third layer 53 in the plane of the test specimen 50. The measurement device 1 may raster scan the surface of the sample 50, or may scan the surface of the sample 50 by another method.

The measurement device 1 of the present embodiment can measure the distribution of voids included in the sample 50 by scanning the surface of the sample 50. As a result, the measurement device 1 can measure the distribution of the bonding state between the first layer 51 and the second layer 52 of the sample 50.

< flow chart of measurement method >

The measurement apparatus 1 may execute a measurement method including the flow chart illustrated in fig. 12. The flow illustrated in fig. 12 can be realized as a measurement flow executed by the measurement device 1.

The control unit 10 acquires the measurement conditions (step S1). The measurement conditions may include the types of materials constituting the first layer 51 and the second layer 52, respectively, or physical parameters. The physical property parameter of the material may include a refractive index. The measurement conditions may include the thickness of the first layer 51.

The control unit 10 adjusts the angles of the generator and the receiver based on the measurement conditions (step S2). The control section 10 adjusts the angle of the generator so that the electromagnetic wave incident from the first layer 51 to the second layer 52 is totally reflected. The control part 10 adjusts the angle of the receiver according to the angle of the generation part 20.

The control unit 10 adjusts the position of the measuring apparatus 1 on the surface of the sample 50 (step S3). The control unit 10 can move the measurement device 1 by controlling a moving member such as the tire 3. The control unit 10 may adjust the position of the measurement device 1 based on a map designated in advance.

The control unit 10 performs measurement by the ATR method at the current position of the measurement apparatus 1 (step S4). The measurement according to the ATR method is called ATR measurement. The flow of ATR measurement will be described later.

The control unit 10 determines whether or not the scanning on the surface of the sample 50 is completed (step S5). If the scanning is not completed (step S5: NO), the control unit 10 returns to the flow of step S3. When the scanning is completed (YES in step S5), the control unit 10 proceeds to the flow of step S6.

The control unit 10 indicates the measurement result of the sample 50 (step S6). After the flow of step S6, the control unit 10 ends execution of the flow of the flowchart of fig. 12.

The control unit 10 may execute the ATR measurement of step S4 in fig. 12 along the flow of the flowchart in fig. 13.

The control unit 10 generates an electromagnetic wave to be incident on the sample 50, and receives the electromagnetic wave reflected from the sample 50 (step S11). The control unit 10 generates electromagnetic waves in the generator, and makes the electromagnetic waves incident on the sample 50 at a predetermined angle. The electromagnetic wave incident on the sample 50 is reflected inside the sample 50 and emitted to a receiver. The control unit 10 obtains the measurement result of the intensity of the electromagnetic wave received by the receiver.

The control unit 10 calculates the absorption spectrum of the sample 50 (step S12). The control unit 10 can calculate the absorption spectrum of the sample 50 based on the difference between the spectrum of the electromagnetic wave generated by the generator and the spectrum of the electromagnetic wave received by the receiver. The control section 10 may acquire the spectrum of the electromagnetic wave generated by the generator in advance.

The control unit 10 calculates the total reflection absorption spectrum (step S13). The control unit 10 can calculate the total reflection absorption spectrum of the second layer 52, the total reflection absorption spectrum of the third layer 53, or the total reflection absorption spectrum including the surfaces of both the second layer 52 and the third layer 53, based on the absorption spectrum of the sample 50 and the absorption spectrum of the first layer 51. The control section 10 may acquire the absorption spectrum of the first layer 51 in advance.

The control unit 10 determines whether or not the third layer 53 is present between the first layer 51 and the second layer 52 based on the total reflection absorption spectrum (step S14). The control unit 10 may determine whether or not the third layer 53 is present based on the calculation result of the total reflection absorption spectrum and the total reflection absorption spectrum of the second layer 52. For example, the control unit 10 may determine that the third layer 53 is not present when the calculation result of the total reflection absorption spectrum matches the total reflection absorption spectrum of the second layer 52. The control unit 10 may determine that the third layer 53 is present, for example, when the difference between the calculation result of the total reflection absorption spectrum and the total reflection absorption spectrum of the second layer 52 is equal to or greater than a predetermined value.

If it is determined that the third layer 53 is not present (step S14: NO), the control unit 10 ends execution of the flowchart of fig. 13 and returns to the flowchart of step S5 of fig. 12. When determining that the third layer 53 is present (YES in step S14), the controller 10 calculates the area or thickness of the third layer 53 based on the total reflection absorption spectrum (step S15). After step S15, the control unit 10 ends execution of the flowchart in fig. 13, and returns to the flowchart in step S5 in fig. 12.

According to the measurement method of the present embodiment, the third layer 53 is detected with high accuracy. As a result, the measurement accuracy of the bonded state of the first layer 51 and the second layer 52 is improved.

< determination of contact State and adhesion State >

As described above, the measurement device 1 of the present embodiment can determine whether or not the third layer 53 is present between the first layer 51 and the second layer 52, and can calculate the area or the thickness of the third layer 53. Here, although the third layer 53 is not present between the first layer 51 and the second layer 52, there is a possibility that the bonding strength between the first layer 51 and the second layer 52 is less than a prescribed strength. A state in which the third layer 53 exists between the first layer 51 and the second layer 52 is referred to as a partial contact state. A state in which the bonding strength between the first layer 51 and the second layer 52 is less than a prescribed strength although the third layer 53 is not present is referred to as a full-face contact state. A state in which the third layer 53 is not present and the bonding strength between the first layer 51 and the second layer 52 is equal to or higher than a prescribed strength is referred to as an adhesive state.

When the state of the sample 50 is the full-surface contact state, a gap as the third layer 53 can be generated by displacement of at least one of the first layer 51 and the second layer 52 in a direction away from the other. When the state of the sample 50 is the bonded state, even if at least one of the first layer 51 and the second layer 52 is displaced in a direction away from the other, no void is generated as the third layer 53. The measuring apparatus 1 can discriminate whether the state of the sample 50 is the full-surface contact state or the adhesion state by displacing at least one of the first layer 51 and the second layer 52 in a direction of separating from the other by the displacement section 40.

The displacement section 40 can displace the first layer 51 with respect to the second layer 52 by applying a force to the first layer 51 in a direction away from the second layer 52 and the base material 55. In the case where the second layer 52 has elasticity, the first layer 51 can be displaced relative to the second layer 52 regardless of whether a gap is formed between the first layer 51 and the second layer 52. The displacement portion 40 applies a force of a predetermined value or more so as to form a void in a portion where the bonding strength between the first layer 51 and the second layer 52 is smaller than a predetermined strength. The displacement portion 40 can displace the second layer 52 relative to the first layer 51 by applying a force to the second layer 52 or the base material 55 in a direction in which the second layer 52 is separated from the first layer 51. The displacement portion 40 can displace at least one of the first layer 51 and the second layer 52 in a direction away from the other by applying a force to at least one of the first layer 51 and the second layer 52 in a direction away from the other.

The displacement portion 40 can vibrate the sample 50. The displacement unit 40 may include an ultrasonic wave generating element that vibrates the sample 50 by ultrasonic waves. The displacement portion 40 may include a vibration element such as a piezoelectric element. The displacement portion 40 may include a striking portion that imparts vibration by striking the sample 50. The displacement unit 40 may vibrate the sample 50 so that at least one of the first layer 51 and the second layer 52 vibrates. The displacement unit 40 may vibrate the sample 50 so that the phase of vibration of the first layer 51 is different from the phase of vibration of the second layer 52 and the base material 55. The displacement unit 40 may vibrate the sample 50 so that the amplitude of the first layer 51 is different from the amplitudes of the second layer 52 and the base material 55. In this way, at least one of the first layer 51 and the second layer 52 can be displaced in a direction away from the other. The displacement portion 40 may vibrate the sample 50 so that a gap is formed in a portion where the bonding strength between the first layer 51 and the second layer 52 is smaller than a predetermined strength.

The first layer 51, the second layer 52, and the base material 55 each have a natural resonant frequency. When the resonance frequency of the first layer 51 and the resonance frequency of the second layer 52 are different, the displacement portion 40 easily causes the phase of the vibration of the first layer 51 and the phase of the vibration of the second layer 52 to be different. When the second layer 52 vibrates according to the base material 55, the displacement portion 40 easily causes the phase of vibration of the first layer 51 and the phase of vibration of the second layer 52 to be different, because the resonance frequency of the first layer 51 and the resonance frequency of the base material 55 are different. When the resonance frequency of the first layer 51 is different from the resonance frequency of the second layer 52 or the base material 55, the displacement unit 40 may vibrate the sample 50 at the resonance frequency of the first layer 51 to increase the amplitude of the first layer 51. The displacement portion 40 may vibrate the sample 50 at the resonance frequency of the second layer 52 or the base material 55, and may increase the amplitude of the second layer 52 or the base material 55.

The control unit 10 may measure the absorption spectrum of the sample 50 and calculate the total reflection absorption spectrum while shifting the first layer 51 by the shifting unit 40. The control unit 10 can calculate the total reflection absorption spectrum at various times during the displacement of the first layer 51. The case where the displacement of the first layer 51 is the maximum is called case 3. The case where the displacement of the first layer 51 is from zero to maximum is called case 4. Total reflection absorption spectra of case3 and case4 are illustrated in fig. 14. The horizontal and vertical axes of the graph of fig. 14 are the same as those of the graph of fig. 4. The total reflection absorption spectrum of ref is the same spectrum as that of ref shown in fig. 4. The controller 10 may determine the presence of the third layer 53 based on the total reflection absorption spectrum of the case3 at the time when the displacement of the first layer 51 becomes maximum, or may calculate the area or thickness of the third layer 53. The control unit 10 may estimate the total reflection absorption spectrum at the time when the displacement of the first layer 51 becomes maximum, based on the total reflection absorption spectrum of the case 4. The controller 10 may determine the presence of the third layer 53 based on the estimation result of the total reflection absorption spectrum, or may calculate the area or thickness of the third layer 53.

When the displacement unit 40 applies a force to the first layer 51, the control unit 10 may measure the absorption spectrum of the sample 50 when the force applied by the displacement unit 40 is maximum. The absorption spectrum when the maximum force is applied to the first layer 51 can also be considered as the absorption spectrum of the sample 50 at the time when the displacement of the first layer 51 is maximum. Since the displacement unit 40 includes a structure that applies a force to the first layer 51, the control unit 10 can calculate the total reflection absorption spectrum of the case3 with high accuracy. As a result, the measuring apparatus 1 can improve the accuracy of determining whether the bonded state between the first layer 51 and the second layer 52 is the full-surface contact state or the adhesion state.

When the displacement unit 40 vibrates the sample 50, the control unit 10 may measure the absorption spectrum of the sample 50 for a predetermined period. The control unit 10 may determine the timing at which the displacement of the first layer 51 becomes maximum based on the measurement result of the absorption spectrum of the sample 50 within a predetermined period. The control unit 10 may determine the presence of the third layer 53 based on the absorption spectrum of the sample 50 at the time when the displacement of the first layer 51 becomes maximum. The control unit 10 may determine the presence of the third layer 53 based on the absorption spectrum in which the absorptance at the predetermined frequency is the minimum. The displacement unit 40 includes a structure for vibrating the sample 50, and the control unit 10 can calculate the total reflection absorption spectrum of the case 3. As a result, the measuring apparatus 1 can determine whether the bonded state between the first layer 51 and the second layer 52 is the full-surface contact state or the adhesion state with a simple configuration.

< flow chart >

The control unit 10 may execute the flow of the flowchart of fig. 15, including the flow of the displacement unit 40 displacing the first layer 51 as the ATR measurement executed at step S4 of fig. 12.

The displacement section 40 displaces the first layer 51 (step S21). That is, the control section 10 controls the displacement section 40 so that the first layer 51 is displaced with respect to the second layer 52.

The control unit 10 generates an electromagnetic wave to be incident on the sample 50, and receives the electromagnetic wave reflected from the sample 50 (step S22). The control section 10 may execute the same or similar flow as the flow of step S11 of fig. 12.

The control unit 10 calculates the absorption spectrum of the sample 50 (step S23). The control section 10 may execute the same or similar flow as the flow of step S12 of fig. 12.

The control unit 10 calculates the total reflection absorption spectrum (step S24). The control section 10 may execute the same or similar flow as the flow of step S13 of fig. 12.

The control unit 10 determines whether or not the data acquisition is completed (step S25). If the presence of the third layer 53 can be determined based on the total reflection absorption spectrum calculated in the flow of steps S21 to S24, the control unit 10 may determine that the data acquisition is completed. The control unit 10 may determine that the data acquisition is completed when the calculated total reflection absorption spectrum corresponds to the total reflection absorption spectrum of the case3 in fig. 14 or when the total reflection absorption spectrum of the case3 can be estimated based on the calculated total reflection absorption spectrum.

If it is not determined that the data acquisition is completed (step S25: NO), the control unit 10 returns to the flow of step S21 and continues the calculation of the total reflection absorption spectrum. When determining that the data acquisition is completed (YES in step S25), the control unit 10 determines whether or not the third layer 53 is present based on the calculated total reflection absorption spectrum (step S26). The control section 10 may execute the same or similar flow as the flow of step S14 of fig. 12.

If it is determined that the third layer 53 is not present (step S26: NO), the control unit 10 ends execution of the flowchart of fig. 15 and returns to the flowchart of step S5 of fig. 12. When determining that the third layer 53 is present (YES in step S26), the controller 10 calculates the area or thickness of the third layer 53 based on the total reflection absorption spectrum (step S27). After step S27, the control unit 10 ends execution of the flowchart in fig. 15, and returns to the flowchart in step S5 in fig. 12.

As described above, the measurement device 1 of the present embodiment can discriminate whether the state of the sample 50 is the full-surface contact state or the adhesion state by displacing the first layer 51 by the displacement portion 40. As a result, the bonding state of the sample 50 can be detected with high accuracy.

In the analysis by the general ATR method, a prism having a high refractive index can be used to make an electromagnetic wave incident on an analysis object. In this embodiment, since the refractive index of the first layer 51 is larger than that of the second layer 52, the first layer 51 can function as a prism. The measurement device 1 of the present embodiment can be considered to analyze the second layer 52 by the ATR method using the first layer 51 as a prism. The measurement apparatus 1 can analyze the ratio of the third layer 53 included in the second layer 52.

(example of case where n1 < n2 holds)

In the above, the embodiment assuming that n1 > n2 is established has been described. The measurement device 1 can determine the presence of the third layer 53 even when the refractive index of the first layer 51 is smaller than the refractive index of the second layer 52, that is, even when n1 < n2 holds.

In the case where the refractive index of the first layer 51 is smaller than the refractive index of the second layer 52, as illustrated in fig. 16, the incident electromagnetic wave 61a advancing from the first layer 51 to the second layer 52 is not totally reflected at the surface of the second layer 52. Although a part of the incident electromagnetic wave 61a is reflected at the surface of the second layer 52, most of the incident electromagnetic wave 61a advances toward the inside of the second layer 52 as a refracted electromagnetic wave 65. On the other hand, in the case where the third layer 53 is present, the incident electromagnetic wave 61b that has traveled from the first layer 51 to the third layer 53 is totally reflected on the surface of the third layer 53 and exits from the first layer 51 as the reflected electromagnetic wave 63. That is, in the case where the third layer 53 is present and the case where the third layer 53 is not present, the intensity of the electromagnetic wave that can be received by the receiving section 30 is very different. The measurement device 1 may determine that the third layer 53 is present when the intensity of the electromagnetic wave received by the receiving unit 30 is equal to or greater than a predetermined value. The measuring apparatus 1 can calculate the area or thickness of the third layer 53 based on the intensity of the electromagnetic wave.

The measurement device 1 can operate by selecting a mode in which the electromagnetic wave totally reflected is received by both the second layer 52 and the third layer 53 and a mode in which the electromagnetic wave totally reflected is received only by the third layer 53, based on the magnitude relationship between the refractive index of the first layer 51 and the refractive index of the second layer 52. The measurement device 1 receives input of measurement conditions and the like, and obtains the refractive indices of the first layer 51 and the second layer 52, respectively, to determine the magnitude relationship of the refractive indices. The measuring apparatus 1 may change the determination method of the presence of the third layer 53 or the calculation method of the area or thickness of the third layer 53 in accordance with the operation mode.

Even in the case where n1 > n2 holds, the incident electromagnetic wave 61 is at an angle smaller than the critical angle θ from the first layer 51 to the second layer 52_C12Nor is it totally reflected at the surface of the second layer 52. On the other hand, the incident electromagnetic wave 61 is at an angle θ larger than the critical angle θ from the first layer 51 to the third layer 53_C13Is incident at the angle of (3), is totally reflected at the surface of the third layer 53. That is, at θ_C12＞θ_C13In the case where the incident angle of the incident electromagnetic wave 61 is larger than θ_C12And is less than theta_C13In the case of (3), the measurement device 1 may operate in a mode in which the electromagnetic wave totally reflected is received only in the third layer 53.

Even when the measurement device 1 operates in a mode in which the electromagnetic wave totally reflected is received only by the third layer 53, the measurement device can further receive the electromagnetic wave reflected by the surface of the second layer 52 alone. The measurement device 1 can calculate the reflectance of the electromagnetic wave on the surface of the second layer 52 by receiving the electromagnetic wave reflected by the surface of the second layer 52 alone. The reflectivity of the electromagnetic wave is different according to the frequency of the electromagnetic wave. The relationship between the frequency and the reflectance of the electromagnetic wave at each frequency is represented as a reflection spectrum. The measuring apparatus 1 may determine the presence of the third layer 53 based on not only the total reflection absorption spectrum but also the reflection spectrum, or may calculate the area or thickness of the third layer 53.

While the embodiments of the present disclosure have been described above with reference to the drawings, the specific configurations are not limited to the embodiments, and various modifications are included within the scope not departing from the gist of the present disclosure.

Description of the reference numerals

1a measuring device;

2, a frame body;

3, tyre;

10 a control unit;

12 a storage section;

14 User Interface (UI);

20 a generator unit (generator);

22 an incident angle adjusting section;

30 a receiving unit (receiver);

32 an ejection angle adjusting section;

a 40 displacement part;

50 samples (51: first layer, 52: second layer, 53: third layer, 55: substrate); 60 electromagnetic beams;

61(61a, 61b) incident electromagnetic waves;

62 evanescent waves;

63 reflecting the electromagnetic wave;

64 evanescent field;

65 refract the electromagnetic wave.