阅读说明：本技术 半导体结构制作方法及半导体结构 (Semiconductor structure manufacturing method and semiconductor structure ) 是由 刘子玄 于 2021-09-02 设计创作，主要内容包括：本申请实施例属于半导体制造技术领域,具体涉及一种半导体结构制作方法及半导体结构。本申请实施例用以解决相关技术中盲孔内填充填充材料时容易产生空隙的问题。衬底上具有盲孔；形成覆盖盲孔的孔壁和孔底的阻挡层；在阻挡层上形成钝化层,钝化层的厚度沿孔口到孔底的方向逐渐减小；向盲孔内填充填充材料,钝化层与填充材料反应,以使得填充材料先充满钝化层和孔底之间的盲孔,直至钝化层被耗尽,以形成第一填充部；向盲孔内填充填充材料,直至填充材料充满盲孔。与相关技术中直接向盲孔内填充填充材料相比,使填充材料先充满钝化层和孔底之间的盲孔,从而减小盲孔的孔深,再使填充材料充满盲孔,进而避免盲孔内出现空隙。(The embodiment of the application belongs to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor structure manufacturing method and a semiconductor structure. The embodiment of the application is used for solving the problem that gaps are easy to generate when filling materials in blind holes in the related art. A blind hole is formed on the substrate; forming a barrier layer covering the hole wall and the hole bottom of the blind hole; forming a passivation layer on the barrier layer, wherein the thickness of the passivation layer is gradually reduced along the direction from the hole opening to the hole bottom; filling a filling material into the blind hole, wherein the passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the passivation layer and the bottom of the hole until the passivation layer is exhausted, and a first filling part is formed; and filling the blind hole with filling materials until the blind hole is filled with the filling materials. Compared with the prior art in which the filling material is directly filled into the blind hole, the filling material is filled into the blind hole between the passivation layer and the bottom of the hole, so that the depth of the blind hole is reduced, and then the filling material is filled into the blind hole, thereby avoiding the occurrence of a gap in the blind hole.)

1. A method for fabricating a semiconductor structure, comprising:

providing a substrate, wherein the substrate is provided with a blind hole;

forming a blocking layer, wherein the blocking layer covers the hole wall and the hole bottom of the blind hole;

forming a passivation layer on the barrier layer, wherein the thickness of the passivation layer is gradually reduced along the direction from the hole opening to the hole bottom;

filling a filling material into the blind hole, wherein the passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the passivation layer and the hole bottom until the passivation layer is exhausted to form a first filling part;

and filling the filling material into the blind hole until the blind hole is filled with the filling material.

2. The method for fabricating a semiconductor structure according to claim 1, further comprising, after forming the first filling portion:

forming an annular intermediate passivation layer on the barrier layer, wherein the intermediate passivation layer and the first filling portion have the preset distance therebetween;

and filling the filling material into the blind hole, wherein the intermediate passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the intermediate passivation layer and the first filling part until the intermediate passivation layer is exhausted to form an intermediate filling part.

3. The method of claim 2, wherein filling the filling material into the blind via until the filling material fills the blind via comprises:

and filling the filling material into the blind hole after the middle passivation layer is exhausted until the blind hole is filled with the filling material.

4. The method of fabricating a semiconductor structure according to claim 1, wherein forming the passivation layer comprises:

introducing a first working gas;

forming a first reactant and a first by-product by electric field decomposition, the first by-product for reacting with the filler material.

5. The method of claim 4, wherein the first working gas comprises an inert gas and hydrogen, wherein the first reactant comprises inert gas ions, and wherein the first byproduct comprises hydrogen ions.

6. The method for fabricating a semiconductor structure according to claim 5, wherein filling the blind via with a filling material, wherein the step of reacting the passivation layer with the filling material to fill the blind via between the passivation layer and the via bottom until the passivation layer is depleted to form a first filling portion comprises:

and forming the first filling part by adopting a plasma enhanced chemical vapor deposition process.

7. The method for fabricating a semiconductor structure according to claim 6, wherein forming the first filling portion comprises:

and introducing a second working gas and a filling raw material, reacting the second working gas with the filling raw material to generate the filling material under the condition of electric field decomposition, and reacting part of the second working gas with the hydrogen ions to generate a second byproduct.

8. The method of fabricating a semiconductor structure according to claim 7, wherein forming the first filling portion further comprises:

discharging the second by-product.

9. The method of claim 7, wherein the second working gas comprises oxygen, the fill material comprises tetraethoxysilane, the fill material comprises silicon dioxide, and the second byproduct comprises water.

10. The method of claim 1, wherein filling the filling material into the blind via until the filling material fills the blind via comprises:

and filling the filling material by adopting a plasma enhanced chemical vapor deposition process.

11. The method of claim 10, wherein filling the filling material into the blind via until the filling material fills the blind via comprises:

and introducing a third working gas and a filling raw material, and reacting the third working gas and the filling raw material under the condition of electric field decomposition to generate the filling material.

12. The method of claim 11, wherein the step of forming the semiconductor structure comprises the step of forming a semiconductor structure,

the third working gas comprises oxygen, the filling raw material comprises tetraethoxysilane, and the filling material is silicon dioxide.

13. The method of claim 1, wherein said barrier layer is formed using a plasma enhanced chemical vapor deposition process.

14. The method of claim 13, wherein the step of forming the semiconductor structure comprises the step of forming a semiconductor structure,

the barrier layer and the filling material are made of the same material.

15. A semiconductor structure fabricated by the method of any one of claims 1-14.

Technical Field

The embodiment of the application relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure manufacturing method and a semiconductor structure.

Background

Electronic devices such as memories generally have semiconductor structures. A plurality of blind holes are usually formed in a semiconductor structure, and in order to achieve the performance of the semiconductor structure, it is usually necessary to fill the blind holes with a filling material and fill the entire blind holes with the filling material. In the related art, a deposition process is usually used to fill the blind via with the filling material. However, for high aspect ratio blind vias, voids are likely to be formed in the blind via when the fill material is deposited in the blind via, thereby affecting the performance of the semiconductor structure.

Disclosure of Invention

The embodiment of the application provides a semiconductor structure manufacturing method and a semiconductor structure, which are used for solving the problem that gaps are easily generated when filling a filling material in a blind hole in the related art, and further the performance of a semiconductor is influenced.

According to some embodiments, a first aspect of embodiments of the present application provides a method for fabricating a semiconductor structure, including:

providing a substrate, wherein the substrate is provided with a blind hole;

forming a blocking layer, wherein the blocking layer covers the hole wall and the hole bottom of the blind hole;

forming a passivation layer on the barrier layer, wherein the thickness of the passivation layer is gradually reduced along the direction from the hole opening to the hole bottom;

filling a filling material into the blind hole, wherein the passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the passivation layer and the hole bottom until the passivation layer is exhausted to form a first filling part;

and filling the filling material into the blind hole until the blind hole is filled with the filling material.

In one possible implementation manner, after forming the first filling portion, the method further includes:

forming an annular intermediate passivation layer on the barrier layer, wherein the intermediate passivation layer and the first filling portion have the preset distance therebetween;

and filling the filling material into the blind hole, wherein the intermediate passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the intermediate passivation layer and the first filling part until the intermediate passivation layer is exhausted to form an intermediate filling part.

In one possible implementation, filling the blind hole with the filling material until the filling material fills the blind hole includes:

and filling the filling material into the blind hole after the middle passivation layer is exhausted until the blind hole is filled with the filling material.

In one possible implementation, the forming the passivation layer includes:

introducing a first working gas;

forming a first reactant and a first by-product by electric field decomposition, the first by-product for reacting with the filler material.

In one possible implementation, the first working gas includes an inert gas and hydrogen gas, the first reactant includes inert gas ions, and the first byproduct includes hydrogen ions.

In one possible implementation, filling the blind via with a filling material, the passivation layer reacting with the filling material to allow the filling material to fill the blind via between the passivation layer and the via bottom first until the passivation layer is depleted to form a first filling portion includes:

and forming the first filling part by adopting a plasma enhanced chemical vapor deposition process.

In one possible implementation, forming the first filling part includes:

and introducing a second working gas and a filling raw material, reacting the second working gas with the filling raw material to generate the filling material under the condition of electric field decomposition, and reacting part of the second working gas with the hydrogen ions to generate a second byproduct.

In one possible implementation, forming the first filling part further includes:

discharging the second by-product.

In one possible implementation manner, the second working gas includes oxygen, the filling material includes tetraethoxysilane, the filling material is silicon dioxide, and the second byproduct is water.

In one possible implementation, filling the blind hole with the filling material until the filling material fills the blind hole includes:

and filling the filling material by adopting a plasma enhanced chemical vapor deposition process.

In one possible implementation, filling the blind hole with the filling material until the filling material fills the blind hole includes:

and introducing a third working gas and a filling raw material, and reacting the third working gas and the filling raw material under the condition of electric field decomposition to generate the filling material.

In one possible way of realisation,

the third working gas comprises oxygen, the filling raw material comprises tetraethoxysilane, and the filling material is silicon dioxide.

In one possible implementation, the barrier layer is formed using a plasma enhanced chemical vapor deposition process.

In one possible way of realisation,

the barrier layer and the filling material are made of the same material.

According to some embodiments, a second aspect of the embodiments of the present application provides a semiconductor structure fabricated by any one of the above methods for fabricating a semiconductor structure.

The semiconductor structure manufacturing method and the semiconductor structure provided by the embodiment of the application comprise the following steps: providing a substrate, wherein the substrate is provided with a blind hole; forming a barrier layer, wherein the barrier layer covers the hole wall and the hole bottom of the blind hole; forming a passivation layer on the barrier layer, wherein the thickness of the passivation layer is gradually reduced along the direction from the hole opening to the hole bottom; filling a filling material into the blind hole, wherein the passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the passivation layer and the bottom of the hole until the passivation layer is exhausted, and a first filling part is formed; and filling the blind hole with filling materials until the blind hole is filled with the filling materials. Compared with the prior art in which the filling material is directly filled in the blind hole, the filling material is filled in the blind hole between the passivation layer and the bottom of the hole, so that the depth of the blind hole is reduced, and then the filling material is filled in the blind hole, thereby avoiding the occurrence of a gap in the blind hole and improving the performance of the semiconductor structure.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic flow chart illustrating a method for fabricating a semiconductor structure according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram illustrating formation of a barrier layer in a blind via in a method for fabricating a semiconductor structure according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram illustrating a passivation layer formed in a method for fabricating a semiconductor structure according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram illustrating a first filling portion formed in a method for fabricating a semiconductor structure according to an embodiment of the present disclosure;

fig. 5 is a schematic structural diagram illustrating formation of an intermediate passivation layer in a method for fabricating a semiconductor structure according to an embodiment of the present disclosure;

fig. 6 is a schematic structural diagram illustrating the formation of an intermediate filling layer in the method for fabricating a semiconductor structure according to the embodiment of the present disclosure;

fig. 7 is a schematic structural view illustrating a filling material filling a blind via in a semiconductor structure manufacturing method according to an embodiment of the present disclosure.

Description of reference numerals:

10. a substrate; 11. blind holes; 20. a barrier layer; 21. a first filling part; 22. an intermediate filling layer; 30. a passivation layer; 31. an intermediate passivation layer.

Detailed Description

For clear understanding of the technical solutions of the present application, the solutions of the related art will be described in detail first.

In the related art, a deposition process is usually used to fill the blind via with the filling material. The Plasma Enhanced Chemical Vapor Deposition (PECVD) process has a high Deposition rate and is generally used for filling blind vias, and the process mainly uses one or more gas-phase compounds or simple substances containing thin film elements to perform a Chemical reaction on a substrate surface to form a thin film. However, due to the active sputtering principle of plasma, when plasma enhanced chemical vapor deposition is performed to fill blind vias, the thickness of the deposited layer gradually decreases in the direction from the aperture to the bottom of the via. For the blind hole with high aspect ratio, when the filling material is deposited in the blind hole, the filling material at the hole opening is easy to seal in advance, so that a gap is generated in the blind hole, and the performance of the semiconductor structure is influenced.

In view of the above, embodiments of the present disclosure provide a method for fabricating a semiconductor structure and a semiconductor structure, including: forming a passivation layer on the blind hole, wherein the thickness of the passivation layer is gradually reduced along the direction from the hole opening to the hole bottom; filling a filling material into the blind hole, wherein the passivation layer reacts with the filling material, so that the filling material firstly fills the blind hole between the passivation layer and the bottom of the hole until the passivation layer is exhausted, and a first filling part is formed; and filling the blind hole with filling materials until the blind hole is filled with the filling materials. Compared with the prior art in which the filling material is directly filled in the blind hole, the filling material is filled in the blind hole between the passivation layer and the bottom of the hole, so that the depth of the blind hole is reduced, and then the filling material is filled in the blind hole, thereby avoiding the occurrence of a gap in the blind hole and improving the performance of the semiconductor structure.

In order to make the aforementioned objects, features and advantages of the embodiments of the present application more comprehensible, embodiments of the present application are described in detail below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

As shown in fig. 1, the method for manufacturing a semiconductor structure provided in the embodiment of the present application specifically includes the following steps:

s101, providing a substrate 10, wherein the substrate 10 is provided with a blind hole 11.

In this embodiment, the substrate 10 may be a semiconductor base, such as silicon or silicon germanium (SiGe) with a single crystal silicon, polysilicon or amorphous structure, or may be a mixed semiconductor structure, such as silicon carbide, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, an alloy semiconductor, or a combination thereof, which is not limited herein.

And S102, forming a barrier layer 20, wherein the barrier layer 20 covers the hole wall and the hole bottom of the blind hole 11.

Referring to fig. 2, a barrier layer 20 also covers the surface of the substrate 10, and the barrier layer 20 is used to isolate the substrate 10 from the filling material, thereby preventing the substrate 10 from being damaged.

Optionally, a plasma enhanced chemical vapor deposition process is used to form the barrier layer 20, so as to accelerate the deposition rate and shorten the manufacturing time of the semiconductor structure. To facilitate understanding of the present embodiment, the principle of the plasma enhanced chemical vapor deposition process is briefly described as follows: the plasma enhanced chemical vapor deposition process is that under low pressure, low temperature plasma is utilized to generate glow discharge on a cathode of a process cavity (namely, on a tray for placing a sample), the sample is heated to a preset temperature by utilizing the glow discharge, then a proper amount of working gas is introduced, and the gas forms a solid film on the surface of the sample through a series of chemical reactions and plasma reactions.

Due to the active sputtering principle of the plasma, the thickness of the barrier layer 20 decreases gradually from the aperture to the bottom of the blind hole 11, i.e. the thickness of the barrier layer 20 near the aperture of the blind hole 11 is greater than the thickness of the barrier layer 20 near the bottom of the blind hole 11.

In this embodiment, the material of the barrier layer 20 may include silicon dioxide. In one possible implementation, the material of the barrier layer 20 may further include silicon nitride and silicon oxynitride.

Optionally, the barrier layer 20 and the filling material are made of the same material, so that the subsequent barrier layer 20 and the filling material can form an integrated structure, which is beneficial to realizing the performance of the semiconductor structure.

And S103, forming a passivation layer 30 on the barrier layer 20, wherein the thickness of the passivation layer 30 is gradually reduced along the direction from the hole opening to the bottom of the hole.

Referring to fig. 3, the passivation layer 30 is used to react with the filling material filled subsequently, so that the filling material is formed at the bottom of the blind via 11. Illustratively, the passivation layer 30 may be formed using a plasma enhanced chemical vapor deposition process such that the thickness of the passivation layer 30 near the aperture of the blind via 11 is greater than the thickness of the passivation layer 30 near the bottom of the blind via 11. In this embodiment, the thickness of the passivation layer 30 gradually decreases to zero in the direction from the aperture to the bottom of the hole, i.e., the passivation layer 30 has a first distance from the bottom of the blind hole 11.

Optionally, in this embodiment, the step of forming the passivation layer 30 includes: and introducing the first working gas so as to form a passivation layer 30 capable of covering the hole wall of the blind hole 11 in the following step.

In the step of forming the passivation layer 30, the step after the first working gas is introduced further includes: the first reactant and the first by-product are formed by electric field decomposition, and the first by-product is used for reacting with the filling material.

The first working gas enters the furnace cavity from the gas inlet of the reaction chamber, the first working gas gradually diffuses to the surface of the semiconductor structure, and the first working gas is decomposed into a first reactant and a first byproduct under the action of the electric field, wherein the first reactant and the first byproduct are adsorbed on the surface of the barrier layer 20 in the form of chemical bonds and gradually form a continuous film state.

Optionally, the first working gas comprises an inert gas and hydrogen, the first reactant comprises inert gas ions, and the first byproduct comprises hydrogen ions.

The inert gas may include, for example, argon, helium, and the like. Taking the example that the introduced first working gas includes argon and hydrogen, the argon and hydrogen are decomposed into argon ions and hydrogen ions under the action of the electric field, and the argon ions and the hydrogen ions are adsorbed on the surface of the barrier layer 20 and have a first distance from the bottom of the blind hole 11 to form the passivation layer 30.

And S104, filling the blind hole 11 with a filling material, and reacting the passivation layer 30 with the filling material, so that the filling material firstly fills the blind hole 11 between the passivation layer 30 and the bottom of the hole until the passivation layer 30 is exhausted, thereby forming a first filling part 21.

Illustratively, as shown in fig. 4, the first filling portion 21 is located in the blind hole 11 and fills the blind hole 11 between the passivation layer 30 and the bottom of the hole. After the first filling part 21 is formed, the passivation layer 30 is depleted. At this moment, the blind hole 11 is filled with the barrier layer 20 and the first filling part 21 covering the outside of the barrier layer 20, and the first filling part 21 is filled with the bottom of the blind hole 11, so that the depth of the blind hole 11 is relatively reduced, and the subsequent filling of a filling material is facilitated, thereby avoiding the occurrence of a gap and further improving the performance of the semiconductor structure.

Optionally, in this embodiment, the step of filling the blind via 11 with a filling material, and reacting the passivation layer 30 with the filling material, so that the filling material fills the blind via 11 between the passivation layer 30 and the bottom of the via first until the passivation layer 30 is consumed, so as to form the first filling portion 21 includes:

the first filling portion 21 is formed by a plasma enhanced chemical vapor deposition process, so as to accelerate the deposition rate and shorten the manufacturing time of the semiconductor structure.

Optionally, in this embodiment, the step of forming the first filling part 21 includes: the second working gas and the filler are introduced to form the first filler 21.

In the step of forming the first filling part 21, the step after the second working gas is introduced further includes: under the condition of electric field decomposition, the second working gas and the filling raw material react to generate a filling material, and part of the second working gas reacts with hydrogen ions to generate a second byproduct.

The second working gas and the filling material enter the furnace cavity from the gas inlet of the reaction chamber, the second working gas and the filling material gradually diffuse to the surface of the semiconductor structure, the second working gas and the filling material diffused to the bottom of the blind hole 11 react to form a filling material under the action of the electric field, and the filling material is adsorbed on the surface of the barrier layer 20 by forming chemical bonds and gradually forms a continuous thin film state until the first filling part 21 is formed. The second working gas diffused to the surface of the passivation layer 30 reacts with the hydrogen ions to generate a second byproduct so that the passivation layer 30 is consumed. The surface of the passivation layer 30 cannot form a filling material since the second working gas is consumed by the hydrogen ions.

Optionally, the step of forming the first filling part 21 further includes: after a portion of the second working gas reacts with the hydrogen ions to generate a second byproduct, the second byproduct needs to be discharged, so as to prevent the second byproduct from affecting the subsequent process.

Optionally, the second working gas includes oxygen, the filling material includes tetraethoxysilane, the filling material is silicon dioxide, and the second byproduct is water.

In this embodiment, the product formed by the tetraethoxysilane and the oxygen under the action of the electric field includes silicon dioxide, and part of the oxygen also reacts with hydrogen ions to generate water. It is worth mentioning that water is discharged from the gas outlet of the reaction chamber under the action of the vacuum pump.

And S105, filling the filling material into the blind hole 11 until the blind hole 11 is filled with the filling material.

Illustratively, referring to fig. 7, when the filling material is filled into the blind hole 11 again, the filling material covers the first filling portion 21 and the barrier layer 20, and since the first filling portion 21 is filled with the bottom of the blind hole 11, the depth of the blind hole 11 is relatively reduced, the filling material is prevented from being sealed in advance, the filling material is facilitated to fill the blind hole 11, and thus the performance of the semiconductor structure is improved.

Optionally, the step of filling the blind hole 11 with the filling material until the blind hole 11 is filled with the filling material includes: and filling the filling material by adopting a plasma enhanced chemical vapor deposition process so as to accelerate the deposition rate and shorten the manufacturing time of the semiconductor structure.

Optionally, in this embodiment, the step of filling the filling material into the blind hole 11 until the blind hole 11 is filled with the filling material specifically includes: and introducing a third working gas and filling raw materials so that the blind holes 11 are filled with the subsequent filling materials.

In the step of filling the filling material into the blind hole 11, the step after introducing the third working gas and the filling material further includes: and under the condition of electric field decomposition, the third working gas and the filling raw material react to generate the filling material.

The third working gas and the filling material enter the furnace cavity from the gas inlet of the reaction chamber, the third working gas and the filling material gradually diffuse to the surface of the semiconductor structure, the third working gas and the filling material react under the action of the electric field to become the filling material, and since the passivation layer 30 is consumed at this time, the filling material is adsorbed on the surfaces of the barrier layer 20 and the first filling portion 21 in a chemical bond manner, and gradually forms a continuous thin film state until the blind holes 11 are filled.

Optionally, the third working gas includes oxygen, the filling material includes tetraethoxysilane, and the filling material is silicon dioxide.

In this embodiment, the product formed by tetraethoxysilane and oxygen under the action of the electric field includes silicon dioxide. It should be noted that, in this embodiment, the second working gas and the third working gas are both oxygen, so that the filling material filled in the blind hole 11 can form an integrated structure, which is beneficial to realizing the performance of the semiconductor structure. In other examples, according to actual needs, different gases may be introduced into the second working gas and the third working gas to serve as oxidants, so that the blind holes 11 are filled with fillers of different materials. Of course, different filling materials, such as silane, silicon-containing organic molecules, etc., can be used according to actual needs, and are not limited herein.

The semiconductor structure manufacturing method and the semiconductor structure provided by the embodiment of the application comprise the following steps: providing a substrate 10, wherein the substrate 10 is provided with a blind hole 11; forming a barrier layer 20, wherein the barrier layer 20 covers the hole wall and the hole bottom of the blind hole 11; forming a passivation layer 30 on the barrier layer 20, wherein the thickness of the passivation layer 30 is gradually reduced along the direction from the hole opening to the bottom of the hole; filling the blind hole 11 with a filling material, and reacting the passivation layer 30 with the filling material, so that the filling material fills the blind hole 11 between the passivation layer 30 and the bottom of the hole first until the passivation layer 30 is exhausted, so as to form a first filling part 21; and filling the blind hole 11 with the filling material until the filling material fills the blind hole 11. Compared with the prior art in which the filling material is directly filled into the blind hole 11, the filling material is filled into the blind hole 11 between the passivation layer 30 and the bottom of the hole, so that the depth of the blind hole 11 is reduced, and then the filling material is filled into the blind hole 11, thereby avoiding the occurrence of a gap in the blind hole 11 and improving the performance of the semiconductor structure.

It should be noted that, as the hole depth of the blind hole 11 increases, in order to further prevent voids from occurring in the blind hole 11 when filling the filling material, an annular intermediate passivation layer 31 may be formed on the barrier layer 20 after the step of forming the first filling portion 21, where the intermediate passivation layer 31 has a predetermined distance from the first filling portion 21.

Illustratively, referring to fig. 5, the intermediate passivation layer 31 is used to react with the filling material filled subsequently, so that the filling material covers the first filling portion 21. Illustratively, the intermediate passivation layer 31 may be formed using a plasma enhanced chemical vapor deposition process such that the thickness of the intermediate passivation layer 31 near the aperture of the blind via 11 is greater than the thickness of the intermediate passivation layer 31 near the bottom of the blind via 11. In this embodiment, the thickness of the intermediate passivation layer 31 gradually decreases to zero along the direction from the hole opening to the hole bottom, that is, the intermediate passivation layer 31 has a predetermined distance from the hole bottom of the blind hole 11.

In this embodiment, the material and the forming process of the intermediate passivation layer 31 may be the same as those of the passivation layer 30: argon and hydrogen enter the furnace cavity from the gas inlet of the reaction chamber, the argon and the hydrogen gradually diffuse to the surface of the semiconductor structure, and the argon and the hydrogen are decomposed into argon ions and hydrogen ions under the action of an electric field, and the argon ions and the hydrogen ions are adsorbed on the surface of the barrier layer 20 in the form of chemical bonds and gradually form a continuous film state.

After the step of forming the first filling portion 21, the method further includes, after forming an annular intermediate passivation layer 31 on the barrier layer 20: the filling material is filled into the blind via 11 and the intermediate passivation layer 31 reacts with the filling material such that the filling material first fills the blind via 11 between the intermediate passivation layer 31 and the first filling portion 21 until the intermediate passivation layer 31 is depleted to form the intermediate filling layer 22.

Exemplarily, referring to fig. 6, the intermediate filling layer 22 covers the first filling portion 21, and the intermediate passivation layer 31 is depleted, that is, the intermediate passivation layer 31 disappears. At this moment, the blind hole 11 is filled with the barrier layer 20, and the first filling portion 21 and the middle filling layer 22 which cover the outside of the barrier layer 20, and because the first filling portion 21 and the middle filling layer 22 are filled with part of the blind hole 11, the hole depth of the blind hole 11 is further reduced, which is beneficial to avoiding the occurrence of gaps when filling materials subsequently, and further improving the performance of the semiconductor structure.

In this embodiment, the material and formation process of the intermediate filling layer 22 may be the same as those of the first filling portion 21: tetraethoxysilane and oxygen enter the furnace cavity from the air inlet of the reaction chamber, the tetraethoxysilane and the oxygen are gradually diffused to the surface of the semiconductor structure, the tetraethoxysilane and the oxygen diffused to the bottom of the blind hole 11 react to form silicon dioxide under the action of an electric field, and the silicon dioxide is adsorbed on the surfaces of the barrier layer 20 and the first filling part 21 through the formation of chemical bonds and gradually forms a continuous film state until the intermediate filling layer 22 is formed. The oxygen gas diffused to the surface of the intermediate passivation layer 31 reacts with the hydrogen ions to generate water so that the intermediate passivation layer 31 is consumed. The surface of the intermediate passivation layer 31 cannot form silicon dioxide since oxygen is consumed by hydrogen ions.

Optionally, in this embodiment, the step of filling the blind hole 11 with the filling material until the blind hole 11 is filled with the filling material further includes: after the intermediate passivation layer 31 is depleted, the blind via 11 is filled with a filling material until the filling material fills the blind via 11.

Illustratively, when the filling material is filled into the blind hole 11 again, the filling material covers the intermediate filling layer 22 and the barrier layer 20, and the first filling portion 21 and the intermediate filling layer 22 fill the bottom of the blind hole 11, so that the hole depth of the blind hole 11 is further reduced, the filling material is prevented from being sealed in advance, the filling material is facilitated to fill the blind hole 11, and the performance of the semiconductor structure is improved.

In this embodiment, the material and forming process of the filling material may be the same as those of the filling material: tetraethoxysilane and oxygen enter the furnace cavity from the air inlet of the reaction chamber, the tetraethoxysilane and the oxygen gradually diffuse to the surface of the semiconductor structure, the tetraethoxysilane and the oxygen react to form silicon dioxide under the action of an electric field, and the silicon dioxide is adsorbed on the surfaces of the barrier layer 20 and the middle filling layer 22 in a chemical bond form due to the fact that the passivation layer 30 is exhausted at the moment, and a continuous film state is gradually formed until the blind holes 11 are filled.

It should be noted that, depending on the depth of the blind via 11, the operations of forming the intermediate passivation layer 31 and the intermediate filling layer 22 may need to be repeated several times, so as to further avoid the premature sealing of the filling material, which is beneficial for filling the blind via 11 with the filling material, thereby improving the performance of the semiconductor structure.

With reference to the drawings, the filling material formed in this embodiment also covers the surface of the substrate 10, due to the active sputtering principle, after the filling material fills the blind holes 11, the surface of the substrate 10 presents an uneven appearance, and then the filling material on the surface of the substrate 10 needs to be planarized to avoid affecting the subsequent processes.

The embodiment of the application also provides a semiconductor structure, and the semiconductor structure is manufactured by using the manufacturing method of the semiconductor structure.

The semiconductor structure comprises a substrate 10, wherein a blind hole 11 is formed in the substrate 10, and the blind hole 11 is filled with filling materials. The process of filling the filling material in the blind hole 11 specifically includes: providing a substrate 10, wherein the substrate 10 is provided with a blind hole 11; forming a barrier layer 20, wherein the barrier layer 20 covers the hole wall and the hole bottom of the blind hole 11; forming a passivation layer 30 on the barrier layer 20, wherein the thickness of the passivation layer 30 is gradually reduced along the direction from the hole opening to the bottom of the hole; filling the blind hole 11 with a filling material, and reacting the passivation layer 30 with the filling material, so that the filling material fills the blind hole 11 between the passivation layer 30 and the bottom of the hole first until the passivation layer 30 is exhausted, so as to form a first filling part 21; and filling the blind hole 11 with the filling material until the filling material fills the blind hole 11. Compared with the prior art in which the filling material is directly filled into the blind hole 11, the filling material is filled into the blind hole 11 between the passivation layer 30 and the bottom of the hole, so that the depth of the blind hole 11 is reduced, and then the filling material is filled into the blind hole 11, thereby avoiding the occurrence of a gap in the blind hole 11 and improving the performance of the semiconductor structure.

It is obvious to those skilled in the art that, for convenience and simplicity of description, the foregoing division of the functional modules is merely used as an example, and in practical applications, the above function distribution may be performed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to perform all or part of the above described functions. For the specific working process of the device described above, reference may be made to the corresponding process in the foregoing method embodiment, which is not described herein again.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.