阅读说明：本技术 用于在300mm绝缘体上硅平台中制备底切的方法 (Method for preparing undercuts in 300mm silicon-on-insulator platforms ) 是由 D·尤迪斯缇拉 A·米楞宁 于 2021-05-27 设计创作，主要内容包括：本公开涉及一种用于在绝缘体上硅(SOI)结构中产生底切(UCUT)的方法,具体涉及一种用于300mm SOI平台的方法。为此,本公开提供了一种用于在SOI结构的绝缘体层下的硅基材中制造一个或多个腔室的方法。该方法包括：对硅基材进行第一干法蚀刻以产生一个或多个腔室,对硅基材进行第一湿法蚀刻以使一个或多个腔室扩张,对硅基材进行第二干湿法蚀刻以使一个或多个腔室进一步扩张,并且破坏由第一湿法蚀刻产生的硅琢面,以及进行第二湿法蚀刻以使一个或多个腔室扩张。(The present disclosure relates to a method for creating undercuts (UCUTs) in silicon-on-insulator (SOI) structures, and in particular to a method for 300mm SOI platforms. To this end, the present disclosure provides a method for fabricating one or more cavities in a silicon substrate under an insulator layer of an SOI structure. The method comprises the following steps: the method includes performing a first dry etch of the silicon substrate to create one or more chambers, performing a first wet etch of the silicon substrate to expand the one or more chambers, performing a second dry wet etch of the silicon substrate to further expand the one or more chambers and destroy silicon facets created by the first wet etch, and performing a second wet etch to expand the one or more chambers.)