阅读说明：本技术 组合物 (Composition comprising a metal oxide and a metal oxide ) 是由 中村刚希 杉浦宽记 谷征夫 松下哲也 渡边哲也 竹谷纯一 冈本敏宏 于 2020-04-21 设计创作，主要内容包括：本发明的课题在于,提供一种即使在低温条件下也能够制造载流子迁移率优异的有机薄膜晶体管的组合物。本发明的组合物含有下述式(1)所表示的化合物和下述式(S1)所表示的醇。(The present invention addresses the problem of providing a composition that enables the production of an organic thin film transistor having excellent carrier mobility even under low-temperature conditions. The composition of the present invention contains a compound represented by the following formula (1) and an alcohol represented by the following formula (S1).)

1. A composition comprising a compound represented by the following formula (1) and an alcohol represented by the following formula (S1),

[ chemical formula 1]

In the formula (1), the reaction mixture is,

A¹¹and A¹²Each independently represents-O-, -N (R)^N) -or-P (R)^N)-，

B¹¹～B¹⁸Each independently represents-N ═ or-C (R)^M)＝，

R^NAnd R^MEach independently represents a hydrogen atom or a substituent,

X¹¹～X¹⁴each independently represents an oxygen atom or a sulfur atom,

[ chemical formula 2]

In the formula (S1), the first step,

R^S1～R^S6each independently represents a hydrogen atom, a fluorine atom or a substituent,

R^S7represents a hydrogen atom or a substituent group,

wherein R is^S1～R^S6At least 4 of which are fluorine atoms.

2. The composition of claim 1, wherein,

B¹¹～B¹⁸at least 1 of which is-N ═ N.

3. The composition according to any one of claims 1 to 2, further comprising an organic solvent other than the alcohol represented by the formula (S1).

4. The composition of claim 3, wherein,

the organic solvent is composed of only 1 or more atoms selected from the group consisting of carbon atoms, hydrogen atoms, and halogen atoms.

5. The composition of claim 3 or 4,

in the composition, the content of the alcohol represented by the formula (S1) is 10% by volume or more with respect to the total content of the alcohol represented by the formula (S1) and the organic solvent.

6. The composition according to any one of claims 1 to 5,

in the composition, the alcohol represented by the formula (S1) is an alcohol represented by the following formula (S2),

[ chemical formula 3]

In the formula (S2), the first step,

R^S1～R^S3each independently represents a hydrogen atom, a fluorine atom or a substituent,

R^S7represents a hydrogen atom or a substituent group,

wherein R is^S1～R^S3At least 1 of which is a fluorine atom.

7. The composition according to any one of claims 1 to 6,

in the composition, the alcohol represented by the formula (S1) is an alcohol represented by the following formula (S3),

[ chemical formula 4]

In the formula (S3), the first step,

R^S7represents a hydrogen atom or a substituent.

8. The composition according to any one of claims 1 to 7, which is a composition for forming an organic semiconductor layer.

9. The composition according to any one of claims 1 to 8, which is a composition for forming an organic semiconductor layer for an organic thin film transistor.

Technical Field

The present invention relates to a composition.

Background

Since it is possible to reduce the weight, reduce the cost, and soften the material, studies have been made on using an organic Thin Film Transistor (organic TFT) having an organic semiconductor Film (organic semiconductor layer) in a device using an FET (field effect Transistor), an RFID (radio frequency identifier) tag, and a logic circuit including a memory, which are used in a liquid crystal display and an organic EL (electroluminescence) display.

As a compound for forming such an organic semiconductor film, patent document 1 discloses an organic semiconductor compound having an Azaperylene (Azaperylene) skeleton.

Prior art documents

Patent document

Patent document 1: japanese patent laid-open publication No. 2018-6745

Disclosure of Invention

Technical problem to be solved by the invention

The present inventors have found that there is still room for improvement in the production conditions for producing an organic thin film transistor using the compound having an azaperylene skeleton described in patent document 1. For example, it is required to be able to manufacture an organic thin film transistor excellent in carrier mobility at a relatively low temperature (e.g., room temperature).

Accordingly, an object of the present invention is to provide a composition capable of producing an organic thin film transistor having excellent carrier mobility even under low temperature conditions.

Means for solving the technical problem

As a result of intensive studies on the above problems, the present inventors have found that the above problems can be solved by the following configuration, and have completed the present invention.

〔1〕

A composition containing a compound represented by the formula (1) described later and an alcohol represented by the formula (S1) described later.

〔2〕

The composition according to [ 1], wherein, in the formula (1) described later, B¹¹～B¹⁸At least 1 of which is-N ═ N.

〔3〕

The composition according to any one of [ 1] to [ 3], which further contains an organic solvent other than the alcohol represented by the formula (S1) described later.

〔4〕

The composition according to [ 3], wherein the organic solvent is composed of only 1 or more atoms selected from the group consisting of carbon atoms, hydrogen atoms and halogen atoms.

〔5〕

The composition according to [ 3] or [ 4], wherein the content of the alcohol represented by the formula (S1) described later is 10% by volume or more based on the total content of the alcohol represented by the formula (S1) described later and the organic solvent in the composition.

〔6〕

The composition according to any one of [ 1] to [ 5], wherein the alcohol represented by the formula (S1) described later in the composition is an alcohol represented by the formula (S2) described later.

〔7〕

The composition according to any one of [ 1] to [ 6], wherein the alcohol represented by the formula (S1) described later in the composition is an alcohol represented by the formula (S3) described later.

〔8〕

The composition according to any one of [ 1] to [ 7], which is a composition for forming an organic semiconductor layer.

〔9〕

The composition according to any one of [ 1] to [ 8], which is a composition for forming an organic semiconductor layer for an organic thin film transistor.

Effects of the invention

As described below, according to the present invention, a composition capable of producing an organic thin film transistor having excellent carrier mobility even under low temperature conditions can be provided.

Drawings

Fig. 1 is a schematic cross-sectional view showing a structure of a bottom gate-bottom contact type organic thin film transistor as an example of an organic thin film transistor.

Fig. 2 is a schematic cross-sectional view showing the structure of a bottom gate-top contact type organic thin film transistor as another example of the organic thin film transistor.

Fig. 3 is a schematic view showing an example of a method for forming an organic semiconductor film of an organic thin film transistor.

Fig. 4 is a schematic view showing another example of a method for forming an organic semiconductor film of an organic thin film transistor.

Fig. 5 is a schematic view showing another example of a method for forming an organic semiconductor film of an organic thin film transistor.

Fig. 6 is a schematic view showing an example of a substrate and a member used in a method for forming an organic semiconductor film of an organic thin film transistor.

Detailed Description

The present invention will be described in detail below.

In the present specification, a numerical range expressed by "to" means a range including numerical values before and after "to" as a lower limit value and an upper limit value.

In the present specification, unless otherwise specified, room temperature means 20 ℃.

In the present specification, unless otherwise specified, the volume is a volume at room temperature.

In the present specification, the expression "compound" includes a salt thereof and an ion thereof in addition to the compound itself. The present invention also includes a configuration in which a part of the structure is changed within a range in which the target effect is not impaired.

Further, the compound not designated as substituted or unsubstituted may have a substituent within a range not impairing the intended effect. The pair of substituents, linking groups, and the like (hereinafter, referred to as substituents and the like) are also the same.

In the present specification, when a description such as "may" is used, the condition such as "may be satisfied, or the condition may not be satisfied. For example, "may have a substituent" also includes "may have no substituent".

In the present specification, when a plurality of substituents or the like represented by a specific symbol are present, or when a plurality of substituents or the like are simultaneously specified, the substituents or the like may be the same or different from each other unless otherwise specified. The same applies to the number of substituents and the like. When a plurality of substituents and the like are close to each other (particularly, adjacent to each other), they may be connected to each other to form a ring unless otherwise specified.

In the present invention, when the number of carbon atoms of a group is limited, the number of carbon atoms of the group indicates the total number of carbon atoms including the substituent, unless otherwise specified.

In the present specification, examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

In the present invention, when a group may form an acyclic skeleton and a cyclic skeleton, the group includes a group of the acyclic skeleton and a group of the cyclic skeleton unless otherwise specified.

For example, unless otherwise specified, the aliphatic hydrocarbon group, the alkyl group, the alkenyl group, and the alkenyl group include groups having any of linear, branched, and cyclic structures.

More specific examples of the alkyl group include a linear alkyl group, a branched alkyl group and a cyclic (cyclo) alkyl group.

When the group may form a cyclic skeleton, the lower limit of the number of atoms of the group forming the cyclic skeleton is 3 or more, preferably 5 or more, regardless of the lower limit of the number of atoms specifically described for the group. The cycloalkyl group includes bicycloalkyl, tricycloalkyl and the like.

The composition of the present invention contains a compound represented by the formula (1) described later (hereinafter, also referred to as a specific compound) and an alcohol represented by the formula (S1) described later.

The mechanism for solving the problem of the present invention by such a configuration is not necessarily clear, but the present inventors consider as follows.

That is, the alcohol represented by the formula (S1) is a fluorinated alcohol having a high acidity. The hydrogen atom in the hydroxyl group of the alcohol represented by the formula (S1) can be bonded to a hetero atom (particularly, X) in the specific compound¹¹～X¹⁴Oxygen atom and/or B¹¹～B¹⁸May be formed of-N ═ c) forms hydrogen bonds, and the specific compound in the composition is solvated by the alcohol represented by formula (S1). Thus, the solubility of the specific compound in the composition of the present invention is good even at low temperatures (e.g., room temperature). For this characteristic of the composition of the invention, it is considered that: even if the temperature at which the composition is applied to precipitate the specific compound for the production of the organic semiconductor film is a low temperature condition, the crystallinity of the precipitated specific compound is good, and the carrier mobility of the obtained organic thin film transistor is improved.

In addition, in the composition of the present invention, since the specific compound is well dissolved in the composition, analysis using liquid chromatography or the like is easy, it is easy to confirm and/or adjust the purity of the specific compound in the composition, and it is easy to realize high performance and stable quality of the organic thin film transistor.

[ Compound (specific Compound) represented by the formula (1) ]

First, a compound (specific compound) represented by the formula (1) will be described.

[ chemical formula 1]

In the formula (1), A¹¹And A¹²Respectively represent-O-, -N (R)^N) -or-P (R)^N)-。A¹¹And A¹²Are each preferably-N (R)^N)-。A¹¹And A¹²May be the same as or different from each other.

R^NRepresents a hydrogen atom or a substituent.

As useful as R^NThe substituent(s) is not particularly limited. For example, a group selected from the following substituent group Z is exemplified.

< substituent group Z >)

Substituent group Z includes a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, a silyl group, an alkoxy group, an amino group, an aryloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an acyloxy group, an acylamino group, an aminocarbonylamino group, an alkoxycarbonylamino group, an aryloxycarbonylamino group, an alkylsulfonylamino group, an arylsulfonylamino group, an alkylthio group, an arylthio group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, a silyloxy group, a heterocyclyloxy group, a carbamoyl group, a carbamyloxy group, a heterocyclylthio group, an aminosulfonyl group, an arylazo group, a heterocycloozo group, an imide group, a phosphino group, a phosphinyl group, a phosphinyloxy group, a phosphinylamino group, a hydrazino group, an imino group, a cyano group, a hydroxyl group, a nitro group, a mercapto group, a sulfo group, a carboxyl group, a hydroxamic acid group, a sulfinyl group, a boronic acid group (-B (OH)₂) Phosphate radical (-OPO (OH)₂) Phosphono (-PO (OH)₂) And sulfate (-OSO)₃H)。

The above group selected from substituent group Z may further have a substituent.

Examples of the halogen atom included in substituent group Z include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom or a chlorine atom is preferable.

The alkyl group included in the substituent group Z is not particularly limited, but is preferably an alkyl group having 1(3) to 30 carbon atoms, more preferably an alkyl group having 1(3) to 20 carbon atoms, and still more preferably an alkyl group having 4 to 20 carbon atoms. In addition, the numbers in parentheses indicate the number of carbon atoms in the case of a cycloalkyl group.

Examples of the alkyl group which may have a substituent(s) included in substituent group Z include methyl, ethyl, propyl, 2-methylpropyl, butyl, pentyl (amyl group), n-pentyl (amyl group), 1-methylpentyl, 2-dimethylpropyl, hexyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl, 3, 7-dimethyloctyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, 2, 6-dimethyloctyl, eicosyl, 2-decyltetradecyl, 2-hexyldodecyl, 2-ethyloctyl, 2-decyltetradecyl, 2-butyldecyl, 1-octylnonyl, 2-ethyloctyl, 2-octyldecyl, 2-octyldodecyl, 7-hexylpentadecyl, 2-hexyltetradecyl, 2-ethyldodecyl, 2-decyltetradecyl, 2-octyldodecyl, 1-octylnonyl, 2-ethyloctyl, 2-octyldecyl, 2-octyldodecyl, 7-hexylpentadecyl, 2-octyltetradecyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, adamantyl, benzyl, 2-cyclohexylethyl, p-chlorobenzyl, 2-phenylethyl, trifluoromethyl, perfluoroethyl, 2,3,3,4,4, 4-heptafluorobutyl, C₅F₁₁C₂H₄-、C₆F₁₃C₂H₄-, 3-aminopropyl, 4-aminobutyl, 5-ethoxypentyl, (meth) acryloyloxypropyl, (meth) acryloyloxypentyl, 4-hydroxybutyl, 4-sulfobutyl, 10-phosphonodecyl, 2-hydroxyethoxymethyl, 2-imidazolylethoxymethyl, 4- (N, N-dimethylamino) butyl and 5-norbornenylmethyl.

The alkenyl group included in the substituent group Z is not particularly limited, but is preferably an alkenyl group having 2 to 20 carbon atoms, more preferably an alkenyl group having 2 to 12 carbon atoms, and still more preferably an alkenyl group having 2 to 8 carbon atoms.

Examples of the alkenyl group which may have a substituent(s) included in the substituent group Z include a vinyl group, an allyl group, a 2-butenyl group, a 1-pentenyl group and a 4-pentenyl group.

The alkynyl group included in the substituent group Z is not particularly limited, but is preferably an alkynyl group having 2 to 20 carbon atoms, more preferably an alkynyl group having 2 to 12 carbon atoms, and still more preferably an alkynyl group having 2 to 8 carbon atoms.

Examples of the alkynyl group which may have a substituent(s) included in substituent group Z include an ethynyl group, a propargyl group, a 1-pentynyl group, a trimethylsilylethynyl group, a triethylsilylethynyl group, a triisopropylsilylethynyl group and a 2-p-propylphenylethynyl group.

The aryl group included in the substituent group Z is not particularly limited, but is preferably an aryl group having 6 to 20 carbon atoms, and more preferably an aryl group having 6 to 12 carbon atoms.

Examples of the aryl group which may have a substituent(s) included in the substituent group Z include a phenyl group, a naphthyl group, a 2,4, 6-trimethylphenyl group, a p- (tert-butyl) phenyl group, a 4-methyl-2, 6-dipropylphenyl group, a 4-fluorophenyl group, a 4-trifluoromethylphenyl group, a p-pentylphenyl group, a 3, 4-dipentylphenyl group, a p-heptyloxyphenyl group and a 3, 4-diheptyloxyphenyl group.

Examples of the heterocyclic group included in substituent group Z include heterocyclic groups having 3 or more ring-constituting atoms and containing at least 1 or more hetero atoms and 1 to 30 carbon atoms as ring-constituting atoms. The heterocyclic group includes an aromatic heterocyclic group (heteroaryl group) and an aliphatic heterocyclic group.

Examples of the hetero atom constituting the ring include a nitrogen atom, an oxygen atom and a sulfur atom, and the number thereof is not particularly limited, and is, for example, 1 to 2. The number of carbon atoms constituting the ring is preferably 3 to 20, more preferably 5 to 12.

The heterocyclic group is preferably a group having a 5-membered ring, a 6-membered ring or a condensed ring thereof.

Examples of the heterocyclic group included in substituent group Z include thienyl, thiazolyl, imidazolyl, pyridyl, pyrimidinyl, quinolyl, furyl, selenophenyl, piperidyl, morpholinyl, benzoxazolyl, benzimidazolyl, benzothiazolyl, 2-hexylfuryl and pyranyl.

The silyl group which may have a substituent(s) included in the substituent group Z is not particularly limited, but is preferably a silyl group having a group selected from an alkyl group and an aryl group as a substituent and having 3 to 40 (more preferably 3 to 30, and still more preferably 3 to 24) carbon atoms.

Examples of the silyl group which may have a substituent included in substituent group Z include a trimethylsilyl group, a triphenylsilyl group, and a dimethylphenylsilyl group.

The alkoxy group included in the substituent group Z is not particularly limited, but is preferably an alkoxy group having 1 to 20 carbon atoms, more preferably an alkoxy group having 1 to 12 carbon atoms, and still more preferably an alkoxy group having 1 to 8 carbon atoms.

Examples of the alkoxy group included in substituent group Z include a methoxy group, an ethoxy group, and a butoxy group.

The amino group which may have a substituent included in the substituent group Z is not particularly limited, but is preferably an amino group or an amino group having a group selected from an alkyl group and an aryl group as a substituent and having 1 to 20 (more preferably 1 to 10, further preferably 1 to 6) carbon atoms.

Examples of the amino group which may have a substituent included in the substituent group Z include an amino group, a methylamino group, a dimethylamino group, a diethylamino group, a dibenzylamino group, and an anilino group.

The aryloxy group included in the substituent group Z is not particularly limited, but is preferably an aryloxy group having 6 to 20 carbon atoms, more preferably an aryloxy group having 6 to 16 carbon atoms, and still more preferably an aryloxy group having 6 to 12 carbon atoms.

Examples of the aryloxy group included in substituent group Z include a phenoxy group and a 2-naphthoxy group.

The acyl group included in the substituent group Z is not particularly limited, but is preferably an acyl group having 1 to 20 carbon atoms, more preferably an acyl group having 1 to 16 carbon atoms, and still more preferably an acyl group having 1 to 12 carbon atoms.

Examples of the acyl group which may have a substituent included in the substituent group Z include an acetyl group, a hexanoyl group, a benzoyl group, a formyl group, and a pivaloyl group.

The alkoxycarbonyl group included in the substituent group Z is not particularly limited, but is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms, more preferably an alkoxycarbonyl group having 2 to 16 carbon atoms, still more preferably an alkoxycarbonyl group having 2 to 12 carbon atoms, and particularly preferably a methoxycarbonyl group or an ethoxycarbonyl group.

The aryloxycarbonyl group included in the substituent group Z is not particularly limited, but is preferably an aryloxycarbonyl group having 7 to 20 carbon atoms, more preferably an aryloxycarbonyl group having 7 to 16 carbon atoms, still more preferably an aryloxycarbonyl group having 7 to 10 carbon atoms, and particularly preferably a phenoxycarbonyl group.

The acyloxy group included in the substituent group Z is not particularly limited, but is preferably an acyloxy group having 2 to 20 carbon atoms, more preferably an acyloxy group having 2 to 16 carbon atoms, and still more preferably an acyloxy group having 2 to 10 carbon atoms.

Examples of the acyloxy group which may have a substituent included in the substituent group Z include an acetoxy group, a benzoyloxy group, and a (meth) acryloyloxy group.

The acylamino group included in the substituent group Z is not particularly limited, but is preferably an acylamino group having 2 to 20 carbon atoms, more preferably an acylamino group having 2 to 16 carbon atoms, and further preferably an acylamino group having 2 to 10 carbon atoms.

Examples of the acylamino group included in the substituent group Z include an acetylamino group and a benzoylamino group.

The aminocarbonylamino group included in the substituent group Z is not particularly limited, but is preferably an aminocarbonylamino group having 2 to 20 carbon atoms, more preferably an aminocarbonylamino group having 2 to 16 carbon atoms, still more preferably an aminocarbonylamino group having 2 to 12 carbon atoms, and particularly preferably a ureido group.

The alkoxycarbonylamino group included in the substituent group Z is not particularly limited, but is preferably an alkoxycarbonylamino group having 2 to 20 carbon atoms, more preferably an alkoxycarbonylamino group having 2 to 16 carbon atoms, still more preferably an alkoxycarbonylamino group having 2 to 12 carbon atoms, and particularly preferably a methoxycarbonylamino group.

The aryloxycarbonylamino group included in the substituent group Z is not particularly limited, but is preferably an aryloxycarbonylamino group having 7 to 20 carbon atoms, more preferably an aryloxycarbonylamino group having 7 to 16 carbon atoms, still more preferably an aryloxycarbonylamino group having 7 to 12 carbon atoms, and particularly preferably a phenoxycarbonylamino group.

The alkylthio group included in the substituent group Z is not particularly limited, but is preferably an alkylthio group having 1 to 20 carbon atoms, more preferably an alkylthio group having 1 to 16 carbon atoms, and still more preferably an alkylthio group having 1 to 12 carbon atoms. Examples of the alkylthio group included in substituent group Z include a methylthio group, an ethylthio group, and an octylthio group.

The arylthio group included in the substituent group Z is not particularly limited, but is preferably an arylthio group having 6 to 20 carbon atoms, more preferably an arylthio group having 6 to 16 carbon atoms, still more preferably an arylthio group having 6 to 12 carbon atoms, and particularly preferably a phenylthio group.

The above group selected from substituent group Z may further have a substituent. Examples of such a substituent include a group selected from substituent group Z.

The number of substituents that may be further present in the group further having a substituent (also referred to as a combined group) is not particularly limited, but is, for example, preferably 1 to 6, and more preferably 1 to 3.

The group to be combined is not particularly limited, and examples thereof include groups in which each of the groups selected from the substituent group Z is preferably substituted with another group selected from the substituent group Z. Specifically, there may be mentioned an alkyl group, a halogenated aryl group, a (fluoro) alkylaryl group, or an alkynyl group having a silyl group as a substituent, which has a group selected from the group consisting of a halogen atom, an alkyl group, an aryl group, a heterocyclic group (heteroaryl group), an alkoxy group (including a hydroxyalkoxy group, a halogenated alkoxy group, and a heteroarylalkoxy group), an amino group, an acyloxy group, a hydroxyl group, a sulfate group, a silyl group, a (meth) acryloyloxy group, and a phosphono group, as a substituent. Further, there may be mentioned a group obtained by removing one hydrogen atom from the compound represented by the formula (1).

More specifically, there may be mentioned groups exemplified in the substituent group Z or groups exemplified in the compounds exemplified below or compounds used in examples.

Among the above groups, preferred is an alkyl group (halogenated alkyl group) having a halogen atom as a substituent, an alkyl group having a heterocyclic group as a substituent, or an alkyl group having an aryl group as a substituent, more preferred is an alkyl group (fluorinated alkyl group) having a fluorine atom as a substituent, an alkyl group having a heterocyclic group as a substituent, or an alkyl group having an aryl group as a substituent, and further preferred is an alkyl group having an aryl group as a substituent.

As useful as R^NThe group selected from the substituent group Z is preferably an alkyl group, an aryl group, an alkenyl group, an alkynyl group, a heterocyclic group or a silyl group, more preferably an alkyl group (preferably having 1 to 20 carbon atoms), an aryl group (preferably having 6 to 20 carbon atoms) or a heteroaryl group (a group containing at least 1 or more of the above-mentioned heteroatoms as ring-constituting atoms, preferably a 5-membered ring, a 6-membered ring or a condensed ring thereof, preferably a ring-constituting carbon number of 3 to 20.), and further preferably an alkyl group (preferably a carbon number of 4 to 20).

Wherein as R^NMore preferably an unsubstituted alkyl group, a halogenated alkyl group, an alkyl group having an aryl group as a substituent, or an alkyl group having a heterocycle as a substituent.

In A¹¹And A¹²Each has R^NIn the case of (2), two R^NMay be the same as or different from each other.

In the formula (1), B¹¹～B¹⁸Each represents-N or-C (R)^M) Is as follows. Wherein R is^MRepresents a hydrogen atom or a substituent.

As useful as R^MThe substituent(s) is not particularly limited, and examples thereof include those selected from substituent group Z. The group selected from the substituent group Z may further have a substituent. Examples of such a substituent include a group selected from substituent group Z. As the group further having a substituent, there may be mentioned those which can be used as R^NSpecific examples of the group formed by the combination of (1) above include those listed above, and further include a group having a methine group bonded to a carbon atom of the compound represented by formula (1).

Wherein as R^MThe substituent(s) of (1) is preferably an alkyl group, an alkenyl group, an alkynyl group, an alkoxycarbonyl group, an aryl group, an alkoxy group, a heterocyclic group (particularly, a heteroaryl group), an amino group, a halogen atom, a cyano group, a carboxyl group, a nitro group or a mercapto group, more preferably an alkyl group (an unsubstituted alkyl group, having an aryl group as a substituent)An alkyl group having a substituent or an alkyl group having a heterocycle as a substituent), an alkenyl group (an unsubstituted alkenyl group, an alkenyl group having a silyl group as a substituent, an alkenyl group having an aryl group as a substituent or an alkenyl group having a heterocycle as a substituent), an alkynyl group (an unsubstituted alkynyl group, an alkynyl group having a silyl group as a substituent, an alkynyl group having an aryl group as a substituent, an alkynyl group having a heterocycle as a substituent or the like), an aryl group, an alkoxy group, a heterocyclic group (particularly, a heteroaryl group), a halogen atom or a cyano group, and further preferably an unsubstituted alkyl group, an alkenyl group (an unsubstituted alkenyl group, an alkenyl group having a silyl group as a substituent, an alkenyl group having an aryl group as a substituent or an alkenyl group having a heterocycle as a substituent or the like), an alkynyl group (an unsubstituted alkynyl group, an alkynyl group having a silyl group as a substituent, an alkynyl group having an aryl group as a substituent, an alkynyl group having an aryl group as a substituent or the like), an alkynyl group, Alkynyl group having a heterocycle as a substituent), aryl group, heterocyclic group (particularly, heteroaryl group), halogen atom or cyano group.

Can be used as R^MThe substituent(s) may form a ring. The form of the ring by the substituent includes a form in which the substituents are bonded to each other to form a ring and a form in which a plurality of substituents share one atom to form a ring.

Examples of the mode in which substituents are bonded to each other to form a ring include a mode in which two vinyl groups are bonded to each other to R^MThe bonded carbon atoms together form a benzene ring. Further, as an embodiment in which a plurality of substituents share one atom to form a ring, for example, an embodiment in which two substituents are formed integrally as a sulfur atom (-S-group) is mentioned.

Preferably B¹¹～B¹⁸At least 1 of them is — N ═ N, more preferably 1 to 6 are — N ═ N, still more preferably 1 or 2 are — N ═ N, and particularly preferably 2 are — N ═ N.

B which may be used is not particularly limited, and B is¹¹～B¹⁸May be any of the compounds represented by formula (I). For example, B is preferred¹²、B¹³、B¹⁶And B¹⁷At least 1 of which is-N ═ more preferably B¹²And B¹⁶One or both of which is-N ═ N.

Can be used as B¹¹～B¹⁸is-N ═ inThe nitrogen atom thereof may have a substituent. Examples thereof include an N-oxide group (N → O group) and a salt having a counter anion.

In the formula (1), X¹¹～X¹⁴Each represents an oxygen atom or a sulfur atom, and preferably an oxygen atom. X¹¹～X¹⁴More preferably both are oxygen atoms.

Here, A is¹¹And A¹²And X¹¹～X¹⁴The combination of (A) is not particularly limited, but A is preferred¹¹And A¹²is-N (R)^N) -and X¹¹～X¹⁴Is a combination of oxygen atoms.

The specific compound is preferably a compound represented by the following formula (2).

[ chemical formula 2]

In the formula (2), A¹¹、A¹²And X¹¹～X¹⁴Are each as defined in formula (1) A¹¹、A¹²And X¹¹～X¹⁴The same meanings as above, and the preferred forms are also the same. And, A¹¹、A¹²And X¹¹～X¹⁴Preferred combinations of (a) and (b) are also as described above.

R²¹～R²⁶Each represents a hydrogen atom or a substituent. As useful as R²¹～R²⁶And substituents which can be used as R above^MThe substituents of (A) are the same as each other, and the preferred forms are also the same. R²¹～R²⁶May be bonded to each other or to a carbon atom forming the isoquinoline quinoline skeleton to form a ring.

Specific examples of the above-mentioned specific compounds are shown below and in the examples, but the present invention is not limited thereto.

In the following specific examples, A is shown¹¹And A¹²Are all-N (R)^N) The compound of (1), but in the following specific examples, A may be mentioned¹¹And A¹²(N-R in the following specific examples^N1And N-R^N2) One ofOne or two of which are substituted by-O-or-P (R)^N) -a compound of (a). Herein as-P (R)^N) R in (A-C)^NExamples thereof include R in the following specific examples^N1Or R^N2The same groups.

In the following specific examples, TIPS represents a triisopropylsilyl group, and represents a bonding portion. R of Compounds No.18, 53, 78^N1is-C₇H₁₃(C₆H₁₃)C₈H₁₇. R of Compound No.3^N1And R^N2R of Compound No.20²⁷R of Compound No.28^N2R of the Compound No.38^N1And R^N2R of Compound No.55²²R of the Compound No.63^N1And R^N2R of Compound No.80²²R of Compound No.88^N2R of Compound No.98^N2R of the Compound No.108^N1And R^N2And R of the Compound No.133^N1And R^N2is-nC₆H₁₃。

[ chemical formula 3]

[ chemical formula 4]

[ chemical formula 5]

[ chemical formula 6]

[ chemical formula 7]

[ chemical formula 8]

[ chemical formula 9]

[ chemical formula 10]

[ chemical formula 11]

[ chemical formula 12]

[ chemical formula 13]

[ chemical formula 14]

In the compounds No131 to No 140, R is further exemplified^N1And/or R^N2Is 2-phenethyl (-CH)₂-CH₂-Ph).

The compounds represented by No141 to No 232 are compounds having a central structure shown below.

[ chemical formula 15]

[ chemical formula 16]

[ chemical formula 17]

[ chemical formula 18]

[ chemical formula 19]

[ chemical formula 20]

[ chemical formula 21]

The compounds represented by No233 to 262 are compounds having a central structure shown below.

[ chemical formula 22]

[ chemical formula 23]

[ chemical formula 24]

[ chemical formula 25]

From the viewpoint of improvement in carrier mobility, durability, and material stability, the molecular weight of the specific compound is preferably 350 or more, more preferably 400 or more, and still more preferably 500 or more. From the viewpoint of solubility, the molecular weight is preferably 3000 or less, more preferably 2000 or less, and still more preferably 1000 or less.

The method for synthesizing the specific compound is not particularly limited, and the specific compound can be synthesized by a general method. For example, reference can be made to the synthesis method of patent document 1.

One kind of the specific compound may be used alone, or two or more kinds may be used.

In the composition of the present invention, the content of the specific compound is preferably 10% by mass or more, more preferably 30% by mass or more, and further preferably 50% by mass or more, based on the total solid content. The upper limit thereof may be set to 100 mass%. When the composition contains a binder polymer or the like described later, the upper limit is, for example, preferably 90% by mass or less, and more preferably 80% by mass or less.

The solid component of the composition is a component for forming an organic semiconductor film described later, and does not include a solvent (for example, an alcohol represented by the formula (S1) and an organic solvent described later). Further, as long as a component forming an organic semiconductor film described later is a component, even if the component is in a liquid state, the component is considered to be a solid component.

[ alcohol represented by the formula (S1) ]

The alcohol represented by the formula (S1) will be described.

[ chemical formula 26]

In the formula (S1), R^S1～R^S6Each independently represents hydrogenAn atom, a fluorine atom or a substituent.

Can be used as R^S1～R^S6The substituent(s) is a substituent other than a fluorine atom, and examples thereof include groups other than a fluorine atom in the group selected from the substituent group Z. The group selected from the substituent group Z may further have a substituent. Examples of such a substituent include a group selected from substituent group Z.

Can be used as R^S1～R^S6The substituent(s) is preferably a halogen atom (preferably a chlorine atom) other than a fluorine atom, an alkyl group or an alkoxy group. Examples of the substituent which the alkyl group and the alkoxy group may further have include a halogen atom (preferably a fluorine atom or a chlorine atom).

R^S1～R^S6At least 4 of them are fluorine atoms, preferably 4 to 6 are fluorine atoms, more preferably 5 to 6 are fluorine atoms, and further preferably 6 are all fluorine atoms.

In the formula (S1), R^S7Represents a hydrogen atom or a substituent.

Can be used as R^S7Examples of the substituent(s) include a group selected from the substituent group Z (preferably an alkyl group, an alkenyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, a hydroxyl group, a cyano group, or a carboxyl group).

The group selected from the substituent group Z may further have a substituent. Examples of such a substituent include a group selected from substituent group Z (preferably, an alkyl group, an alkenyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, a hydroxyl group, a cyano group, or a carboxyl group).

Can be used as R^S7The above substituent of (2) is preferably a methyl group, a trifluoromethyl group or a phenyl group.

The alcohol represented by the formula (S1) is preferably a compound represented by the formula (S2).

[ chemical formula 27]

In the formula (S2), R^S1～R^S3Each independently represents a hydrogen atom, a fluorine atom orAnd (4) a substituent.

R^S7Represents a hydrogen atom or a substituent.

R in the formula (S2)^S1～R^S3And R^S7And R in the formula (S1)^S1～R^S3And R^S7The same is true.

Wherein R is^S1～R^S3At least 1 of them is a fluorine atom, preferably 1 to 3 are fluorine atoms, more preferably 2 to 3 are fluorine atoms, and further preferably 3 are all fluorine atoms.

The alcohol represented by the formula (S1) is more preferably a compound represented by the formula (S3).

[ chemical formula 28]

In the formula (S3), R^S7Represents a hydrogen atom or a substituent.

R in the formula (S3)^S7And R in the formula (S1)^S7The same is true.

The alcohol represented by the formula (S1) is preferably liquid at room temperature.

The normal boiling point of the alcohol represented by the formula (S1) is preferably 25 to 250 ℃, and more preferably 40 to 200 ℃.

Specific examples of the alcohol represented by the formula (S1) are shown below and in the examples, but the present invention is not limited thereto.

[ chemical formula 29]

[ chemical formula 30]

[ chemical formula 31]

[ chemical formula 32]

One kind of the alcohol represented by the formula (S1) may be used alone, or two or more kinds may be used.

In the composition of the present invention, the content of the alcohol represented by the formula (S1) is preferably 3 to 99.999% by mass, more preferably 5 to 99.999% by mass, and particularly preferably 10 to 99.999% by mass, based on the total mass of the composition.

[ organic solvent ]

The composition of the present invention preferably further contains an organic solvent.

The organic solvent referred to herein is a compound other than the alcohol represented by the formula (S1).

In the case where the composition of the present invention contains an organic solvent, it is considered that the organic solvent interacts with the specific compound at a site different from the site where the alcohol represented by the formula (S1) and the specific compound are hydrogen-bonded, and the solubility of the specific compound in the composition is improved.

The organic solvent is not particularly limited, and examples thereof include hydrocarbon solvents such as hexane, cyclohexane, octane, decane, toluene, xylene, mesitylene, ethylbenzene, pentylbenzene, decahydronaphthalene, 1-methylnaphthalene, 1-ethylnaphthalene, 1, 6-dimethylnaphthalene and tetrahydronaphthalene, hydrocarbon solvents such as hexane, cyclohexane, octane, decane, toluene, xylene, mesitylene, ethylbenzene, pentylbenzene, decalin, 1-methylnaphthalene, 1-ethylnaphthalene, 1, 6-dimethylnaphthalene and tetrahydronaphthalene, and the like,

Ketone solvent such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, acetophenone, propiophenone, isophorone or bupropion, etc,

Halogenated hydrocarbon solvents such as methylene chloride, chloroform, tetrachloromethane, dichloroethane, trichloroethane, tetrachloroethane, chlorobenzene, 1, 2-dichlorobenzene, 1,2, 4-trichlorobenzene, chlorotoluene, 1-chloronaphthalene and 1-fluoronaphthalene, and the like,

Heterocyclic solvents such as pyridine, picoline, quinoline, thiophene, 3-butylthiophene and thieno [2,3-b ] thiophene,

Halogenated heterocyclic solvents such as 2-chlorothiophene, 3-chlorothiophene, 2, 5-dichlorothiophene, 3, 4-dichlorothiophene, 2-bromothiophene, 3-bromothiophene, 2, 3-dibromothiophene, 2, 4-dibromothiophene, 2, 5-dibromothiophene, 3, 4-dibromothiophene and 3, 4-dichloro-1, 2, 5-thiadiazole, and the like,

Ester solvents such as ethyl acetate, butyl acetate, amyl acetate, 2-ethylhexyl acetate, gamma-butyrolactone and phenyl acetate,

Alcohol solvents such as methanol, propanol, butanol, pentanol, hexanol, cyclohexanol, methyl cellosolve, ethyl cellosolve, and ethylene glycol,

Ether solvents such as dibutyl ether, tetrahydrofuran, dioxane, dimethoxyethane, anisole, ethoxybenzene, propoxybenzene, isopropoxybenzene, butoxybenzene, 2-methylanisole, 3-methylanisole, 4-ethylanisole, dimethylanisole (any of 2,3-, 2,4-, 2,5-, 2,6-, 3,4-, 3,5-, 3, 6-), 1, 4-benzodioxane, and the like,

Amide or imide solvents such as N, N-dimethylformamide, N-dimethylacetamide, 1-methyl-2-pyrrolidone, 1-methyl-2-imidazolidinone and 1, 3-dimethyl-2-imidazolidinone, etc,

Sulfoxide solvents such as dimethyl sulfoxide, etc,

Phosphate ester solvents such as trimethyl phosphate, nitrile solvents such as acetonitrile and benzonitrile, and,

And nitro solvents such as nitromethane and nitrobenzene.

Among them, the organic solvent is preferably a compound composed of only 1 or more atoms selected from the group consisting of carbon atoms, hydrogen atoms, and halogen atoms.

In the case where the organic solvent is a compound composed of only these atoms, it is considered that the improvement of the solubility of the specific compound can be promoted while the hydrogen bond between the alcohol represented by the formula (S1) and the specific compound is maintained well.

Among them, a hydrocarbon solvent or a halogenated hydrocarbon solvent is preferable, and toluene, ethylbenzene, xylene, mesitylene, chloroform, methylene chloride, tetrachloroethane, 1, 2-dichlorobenzene, chlorobenzene, 1-methylnaphthalene, 1-chloronaphthalene, 1-fluoronaphthalene, 1,2, 4-trichlorobenzene, 1-ethylnaphthalene, 1, 6-dimethylnaphthalene or tetrahydronaphthalene is more preferable.

In the composition of the present invention, the content of the organic solvent is preferably 3 to 99.9% by mass, and preferably 5 to 99.5% by mass, based on the total mass of the composition.

One kind of the organic solvent may be used alone, or two or more kinds thereof may be used.

In the composition of the present invention, the total content of the alcohol represented by the formula (S1) and the organic solvent is preferably 90 to 99.999% by mass, more preferably 95 to 99.999% by mass, and still more preferably 96 to 99.999% by mass, based on the total mass of the composition.

In the composition of the present invention, the content of the alcohol represented by the formula (S1) based on the total content of the alcohol represented by the formula (S1) and the organic solvent is preferably 5% by volume or more, and preferably 10% by volume or more. The upper limit is 100 vol% or less, preferably 99 vol% or less, and more preferably 95 vol% or less.

[ adhesive Polymer ]

The composition of the present invention may contain a binder polymer. The composition preferably contains a binder polymer from the viewpoint of obtaining an organic semiconductor film with high film quality.

The kind of the binder polymer is not particularly limited, and a known binder polymer can be used. Examples of the binder polymer include insulating polymers including polystyrene, poly (. alpha. -methylstyrene), polycarbonate, polyarylate, polyester, polyamide, polyimide, polyurethane, polysiloxane, polysulfone, polymethyl methacrylate, polymethyl acrylate, cellulose, polyethylene, and polypropylene, and copolymers thereof.

In addition to these, there may be mentioned, for example, ethylene-propylene rubber, acrylonitrile-butadiene rubber, hydrogenated nitrile rubber, fluororubber, perfluoroelastomer, tetrafluoroethylene-propylene copolymer, ethylene-propylene-diene copolymer, styrene-butadiene rubber, polychloroprene (polychloroprene), butyl rubber, methylphenyl silicone resin, methylphenyl vinyl silicone resin, methyl vinyl silicone resin, fluorosilicone resin, acrylic rubber, ethylene acrylic rubber, chlorosulfonated polyethylene, chlorinated polyethylene, epichlorohydrin copolymer, polyisoprene-natural rubber copolymer, polyisoprene rubber, styrene-isoprene block copolymer, polyester urethane copolymer, polyether ester thermoplastic elastomer, polybutadiene rubber, and thermoplastic elastomer polymer.

Further, examples thereof include a photoconductive polymer including polyvinylcarbazole and polysilane, a conductive polymer including polythiophene, polypyrrole, polyaniline and polyparaphenylene vinylene, and a semiconductor polymer described in Chemistry of Materials, 2014, 26 and 647.

The binder polymer preferably has a structure free of polar groups, considering charge mobility. Here, the polar group means a functional group having a heteroatom other than a carbon atom and a hydrogen atom. Because of having a structure free of polar groups, polystyrene or poly (. alpha. -methylstyrene) is preferable as the binder polymer. Also, a semiconductive polymer is also preferable.

The glass transition temperature of the binder polymer is not particularly limited and may be appropriately set according to the use. For example, when a strong mechanical strength is given to the organic semiconductor film, it is preferable to set the glass transition temperature to a high value. On the other hand, when flexibility is imparted to the organic semiconductor film, the glass transition temperature is preferably set to be low.

The binder polymer may be used alone or in combination of two or more.

In the case where the composition contains a binder polymer, the content of the binder polymer in the composition is preferably 90 mass% or less, more preferably 70 mass% or less, with respect to the total solid content of the composition, from the viewpoint of further improving the carrier mobility and durability of the organic semiconductor film of the organic thin film transistor. The lower limit is not particularly limited, but is preferably 10% by mass or more, and more preferably 20% by mass or more, based on the total solid content of the composition.

The weight average molecular weight of the binder polymer is not particularly limited, but is preferably 1,000 to 1,000 ten thousand, more preferably 3,000 to 500 ten thousand, and still more preferably 5,000 to 300 ten thousand. The weight average molecular weight of the binder polymer can be determined by Gel Permeation Chromatography (GPC).

In the composition, the specific compound may be uniformly mixed with the binder polymer, or a part or all of the specific compound may be separated from the binder polymer. From the viewpoint of ease of coating or uniformity of coating, it is preferable to uniformly mix the specific compound with the binder polymer at least at the time of coating.

[ other ingredients ]

The composition may contain other components than those described above. Various additives can be mentioned as such components.

As the additive, additives generally used in the composition can be used, and more specifically, a surfactant, an antioxidant, a crystallization control agent, and a crystal orientation control agent can be mentioned. As the surfactant and antioxidant, paragraphs 0136 and 0137 of Japanese patent laid-open publication No. 2015-195362 can be applied, and these contents are incorporated in the present specification.

One additive may be used alone, or two or more additives may be used.

The content of the additive in the composition is not particularly limited, and is preferably 10% by mass or less, more preferably 5% by mass or less, and further preferably 1% by mass or less, relative to the total solid content of the composition, from the viewpoint of excellent film-forming properties and further improvement in carrier mobility and heat resistance.

From the viewpoint of printability, the viscosity of the composition is preferably 10mPa · s or more.

[ production method ]

The method for producing the composition is not particularly limited, and a usual production method can be employed. For example, a composition can be prepared by adding predetermined amounts of the respective components to the alcohol represented by the formula (S1) and/or the organic solvent and stirring them as appropriate.

If necessary, heating may be performed while or after stirring the respective components. The heating temperature is not particularly limited, and is determined, for example, within a range of 40 to 150 ℃. In the case of using a solvent, the temperature below the boiling point of the solvent within the above range is determined.

Among these, since the specific compound is well dissolved, the composition of the present invention can be produced without heating (less than 40 ℃) the mixture of the alcohol represented by the formula (S1) and the above alcohol and, if necessary, the organic solvent.

Further, as described above, since the specific compound represented by the formula (1) is well soluble even at room temperature, the composition of the present invention can easily measure the purity of the specific compound represented by the formula (1) by analysis using liquid chromatography or the like when the composition does not substantially contain a binder polymer.

For example, when the composition is analyzed by liquid chromatography and the detection wavelength is 254nm, the area ratio of the peak derived from the specific compound to the total peak surface area is preferably 95% or more, and more preferably 99% or more.

[ organic thin film transistor ]

The composition of the present invention is preferably used as a composition for forming an organic semiconductor layer, and more preferably used as a composition for forming an organic semiconductor layer for an organic thin film transistor.

Hereinafter, an organic thin film transistor (hereinafter, also referred to as "organic TFT") which can be manufactured using the composition of the present invention will be described.

The organic TFT includes an organic semiconductor film described later. Thus, the organic TFT exhibits high carrier mobility, and is effectively suppressed from decreasing with time even under the atmospheric air, thereby performing stable driving. The ambient temperature and humidity under the atmosphere are not particularly limited as long as they are the temperature and humidity under the environment in which the organic TFT is used, and examples of the temperature include room temperature (20 ℃) and the humidity include 10 to 90 RH%.

The organic TFT is preferably used as an organic Field Effect Transistor (FET), and more preferably as an insulated gate type FET with gate-channel insulation.

The thickness of the organic TFT is not particularly limited, but if the transistor is to be made thinner, the thickness of the entire organic TFT is preferably set to 0.1 to 0.5 μm, for example.

The organic TFT may have an organic semiconductor film (also referred to as an organic semiconductor layer or a semiconductor active layer) containing a specific compound, and may further have a source electrode, a drain electrode, a gate electrode, and a gate insulating film.

The organic TFT preferably includes, on a substrate, a gate electrode, an organic semiconductor film, a gate insulating film provided between the gate electrode and the organic semiconductor film, and a source electrode and a drain electrode provided in contact with the organic semiconductor film and connected via the organic semiconductor film. In the organic TFT, an organic semiconductor film and a gate insulating film are disposed adjacent to each other.

The organic TFT has no particular limitation in its structure as long as it has the above layers. For example, it may have any one of a bottom gate-bottom contact type, a top gate-bottom contact type, a bottom gate-top contact type, and a top gate-top contact type. As the organic TFT, a bottom gate type (bottom gate-bottom contact type or bottom gate-top contact type) in which a gate electrode is provided between a substrate and an organic semiconductor film is preferable.

Hereinafter, an example of the organic TFT will be described with reference to the drawings.

< bottom gate-bottom contact type organic TFT >

Fig. 1 is a schematic cross-sectional view showing the structure of a bottom gate-bottom contact type organic TFT10 as an example of an organic TFT.

As shown in fig. 1, the organic TFT10 includes a substrate (base material) 1, a gate electrode 2, a gate insulating film 3, source and drain electrodes 4A and 4B, an organic semiconductor film 5, and a sealing layer 6 in this order.

Hereinafter, a substrate (base material), a gate electrode, a gate insulating film, a source electrode, a drain electrode, an organic semiconductor film, a sealing layer, and methods for producing them will be described.

(substrate)

The substrate functions to support the gate electrode, the source electrode, the drain electrode, and other layers.

The type of the substrate is not particularly limited, and examples thereof include a plastic substrate, a silicon substrate, a glass substrate, and a ceramic substrate. Among them, a glass substrate or a plastic substrate is preferable from the viewpoint of applicability to each device and cost.

The thickness of the substrate is not particularly limited. The upper limit of the thickness of the substrate is preferably 10mm or less, more preferably 2mm or less, and further preferably 1.5mm or less. The lower limit of the thickness of the substrate is preferably 0.01mm or more, and more preferably 0.05mm or more.

(Gate electrode)

The gate electrode may be applied to a general electrode used as a gate electrode of an organic TFT without particular limitation.

The material for forming the gate electrode (electrode material) is not particularly limited, and examples thereof include metals including gold, silver, aluminum, copper, chromium, nickel, cobalt, titanium, platinum, magnesium, calcium, barium, and sodium, and InO₂、SnO₂And/or conductive oxides of Indium Tin Oxide (ITO), conductive polymers including polyaniline, polypyrrole, polythiophene, polyacetylene, and polydiacetylene, semiconductors including silicon, germanium, and gallium arsenide, and carbon materials including fullerene, carbon nanotube, and graphite. Among them, the above metals are preferable, and silver or aluminum is more preferable.

The thickness of the gate electrode is not particularly limited, but is preferably 20 to 200 nm.

The gate electrode may be a gate electrode that functions as the substrate, and in this case, the substrate may not be provided.

The method for forming the gate electrode is not particularly limited, and examples thereof include a method of vacuum vapor deposition (hereinafter, also simply referred to as "vapor deposition") or sputtering the electrode material on the substrate, and a method of applying or printing an electrode-forming composition containing the electrode material. In the case of patterning the gate electrode, examples of patterning methods include printing methods including inkjet printing, screen printing, offset printing, and relief printing (flexography), photolithography, and mask vapor deposition.

(Gate insulating film)

The gate insulating film is not particularly limited as long as it is a layer having insulating properties, and may be a single layer or a plurality of layers.

The material for forming the gate insulating film is not particularly limited, and examples thereof include polymers including polymethyl methacrylate, polystyrene, polyvinyl phenol, melamine resin, polyimide, polycarbonate, polyester, polyvinyl alcohol, polyvinyl acetate, polyurethane, polysulfone, polybenzoxazole, polysilsesquioxane, epoxy resin, and phenol resin, inorganic oxides including silicon oxide, aluminum oxide, and titanium oxide, and nitrides including silicon nitride. Among them, the polymer is preferable from the viewpoint of compatibility with the organic semiconductor film, and the inorganic oxide is preferable from the viewpoint of film uniformity, and silicon dioxide is more preferable.

These materials may be used alone or in combination of two or more.

The thickness of the gate insulating film is not particularly limited, but is preferably 100 to 1000 nm.

The method of forming the gate insulating film is not particularly limited, and examples thereof include a method of applying a gate insulating film forming composition containing the above-mentioned material on a substrate on which a gate electrode is formed, and a method of depositing or sputtering the above-mentioned material.

(Source and drain electrodes)

In the organic TFT, a source electrode is an electrode into which a current flows from the outside through a wiring. The drain electrode is an electrode for sending current to the outside through a wiring.

The source electrode and the drain electrode may be formed of the same material as the electrode material for forming the gate electrode. Among them, metals are preferable, and gold or silver is more preferable.

The thickness of the source electrode and the drain electrode is not particularly limited, but each is preferably 1nm or more, and more preferably 10nm or more. The upper limit of the thickness of the source electrode and the drain electrode is preferably 500nm or less, and more preferably 300nm or less.

The interval (gate length L) between the source electrode and the drain electrode can be determined as appropriate, but is preferably 200 μm or less, and more preferably 100 μm or less. The gate width W may be appropriately determined, but is preferably 5000 μm or less, and more preferably 1000 μm or less. The ratio of the gate width W to the gate length L is not particularly limited, but is, for example, preferably 10 or more, and more preferably 20 or more in W/L ratio.

The method of forming the source electrode and the drain electrode is not particularly limited, and examples thereof include a method of vacuum-evaporating or sputtering an electrode material on a substrate on which a gate electrode and a gate insulating film are formed, and a method of coating or printing a composition for forming an electrode. The patterning method for patterning the source electrode and the drain electrode is the same as the patterning method for the gate electrode.

(organic semiconductor film)

Among them, the organic semiconductor film is preferably used as the organic semiconductor film of the organic thin film transistor. Hereinafter, a case where the organic semiconductor film of the present invention is used as an organic semiconductor film of an organic thin film transistor will be described.

As the organic semiconductor film in the organic TFT, an organic semiconductor film containing a specific compound is used. The organic semiconductor film may contain one or two or more kinds of specific compounds.

When the organic semiconductor film contains a specific compound, the carrier mobility of the organic semiconductor film can be improved, and high carrier mobility can be maintained even when the organic semiconductor film is used or stored (left) in the atmosphere. The reason for this is not clear, but it is considered that the lowest unoccupied molecular orbital of a specific compound has a low orbital energy.

The content of the specific compound in the organic semiconductor film is not particularly limited and can be set as appropriate. For example, the content of the specific compound with respect to the total mass of the organic semiconductor film is preferably 10 mass% or more, more preferably 30 mass% or more, and further preferably 50 mass% or more. The upper limit thereof is not particularly limited, and the content of the specific compound with respect to the total mass of the organic semiconductor film may be 100 mass%. In the case where the organic semiconductor film contains a binder polymer or other components, the upper limit of the content of the specific compound with respect to the total mass of the organic semiconductor film is preferably 90 mass% or less, and more preferably 80 mass% or less.

The organic semiconductor film may contain the above binder polymer in addition to the specific compound. One or two or more kinds of binder polymers may be used.

In the organic semiconductor film, the content states of the specific compound and the binder polymer are not particularly limited, but from the viewpoint of carrier mobility, the specific compound and the binder polymer are preferably phase-separated from each other in the film thickness direction.

The content of the binder polymer in the organic semiconductor film is not particularly limited and may be appropriately set. In the case where the organic semiconductor film contains a binder polymer, the content of the binder polymer with respect to the total mass of the organic semiconductor film is preferably 90 mass% or less, and more preferably 70 mass% or less. The lower limit thereof is not particularly limited, and the content of the binder polymer with respect to the total mass of the organic semiconductor film may be 0 mass% or more, preferably 10 mass% or more, and more preferably 20 mass% or more.

The organic semiconductor film may contain the above-described additive in addition to the specific compound. One or more additives may be used.

In the case where the organic semiconductor film contains an additive, the content of the additive with respect to the total mass of the organic semiconductor film is preferably 10 mass% or less, more preferably 5 mass% or less, and further preferably 1 mass% or less.

The film thickness of the organic semiconductor film may be suitably determined depending on the organic TFT to be used, but is preferably 10 to 500nm, more preferably 20 to 200 nm.

The organic semiconductor film can be formed by applying the above composition. Details of the method of forming the organic semiconductor film will be described later.

The application of the organic semiconductor film containing the specific compound is not limited to the organic semiconductor film for organic TFTs, and can be used as an organic semiconductor film provided in each of the above-described organic semiconductor devices.

(sealing layer)

Since the organic TFT including the organic semiconductor film is stably driven even in the air, it is not necessary to seal the entire organic TFT to block any of air (oxygen) and moisture, but the entire organic TFT may be sealed with a metal sealing can or a sealing layer may be formed using a sealing agent for the purpose of stable driving for a longer period of time.

As the sealing layer, a sealant (sealing layer-forming composition) generally used in organic TFTs can be used. Examples of the sealant include inorganic materials including glass and silicon nitride, polymer materials including parylene, and low-molecular materials.

The sealing layer can be formed by a common method such as coating and drying using the above-described sealing agent.

The thickness of the sealing layer is not particularly limited, but is preferably 0.2 to 10 μm.

< bottom gate-top contact type organic TFT >

Fig. 2 is a schematic cross-sectional view showing the structure of a bottom gate-top contact type organic TFT20 as an example of an organic TFT.

As shown in fig. 2, the organic TFT20 includes a substrate 1, a gate electrode 2, a gate insulating film 3, an organic semiconductor film 5, a source electrode 4A, a drain electrode 4B, and a sealing layer 6 in this order.

The organic TFT20 is the same as the organic TFT10 except that the layer structure (stacking method) is different. Therefore, the substrate, the gate electrode, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor film, and the sealing layer are the same as those of the bottom gate-bottom contact organic TFT, and therefore, the description thereof is omitted.

< method for manufacturing organic TFT >

The method for manufacturing the organic TFT is not particularly limited as long as it includes a step of forming an organic semiconductor film by coating the composition on a substrate.

The gate electrode, the gate insulating film, the source electrode, the drain electrode, and the sealing layer can be formed or deposited by the above-described method.

Hereinafter, a process of forming an organic semiconductor film will be described.

In this step, the above composition is used.

In the present invention, "coating the composition on the substrate" includes not only a mode of directly coating the composition on the substrate, but also a mode of coating the composition over the substrate via another layer provided on the substrate. The other layer of the coating composition (a layer which is in contact with and becomes a base of the organic semiconductor film) is inevitably determined by the structure of the organic TFT. For example, in the case where the organic TFT is a bottom gate type, the composition is applied to at least the surface of the gate insulating film.

When the organic semiconductor film is formed, the substrate may be heated or cooled. By changing the temperature of the substrate, the deposition of a specific compound in the film can be controlled.

The temperature of the substrate is not particularly limited. For example, the temperature of the substrate is preferably set within a range of 0 to 200 ℃, more preferably within a range of 10 to 150 ℃, and further preferably within a range of 15 to 40 ℃.

When the composition of the present invention is used, the specific compound in the film is favorably deposited even when the temperature of the substrate is set in a temperature range around room temperature.

A method for forming an organic semiconductor film using the composition of the present invention is generally a so-called solution method.

Certain compounds are also stable under atmospheric conditions. Therefore, the solution method can be performed under the atmosphere, and the composition can be applied over a large area.

As a method for applying the composition in the solution method, a general method can be used. Examples thereof include a coating method including a droplet coating method, a casting method, a dip coating method, a die coating method, a roll coating method, a bar coating method and a spin coating method, various printing methods including an ink jet method, a screen printing method, a gravure printing method, a flexo printing method, an offset printing method and a micro-contact printing method, and a Langmuir-blodgett (lb) method. Among them, a droplet coating method, a casting method, a spin coating method, an ink jet method, a gravure printing method, a flexographic printing method, an offset printing method, or a micro-contact printing method is preferable.

The method of applying the composition in the preferred embodiment of the solution method described later is preferably an ink jet method, a gravure printing method, a flexographic printing method, an offset printing method or a micro-contact printing method, and more preferably a flexographic printing method, a micro-contact printing method or an ink jet method.

In the solution method, the composition applied to the substrate is preferably dried, and more preferably gradually dried. By drying the composition applied to the substrate, crystals of the specific compound can be precipitated to form an organic semiconductor film.

The drying method of the composition is preferably drying under reduced pressure after drying naturally or after drying by heating on a heated substrate, from the viewpoint of film quality. The temperature of the substrate in the natural drying or the heat drying is not limited since it can be appropriately changed depending on the boiling point of the solvent in the composition, but is, for example, preferably 10 to 200 ℃, more preferably 15 to 150 ℃. The time for natural drying or heat drying is preferably 0.5 to 20 hours, and more preferably 1 to 10 hours.

The temperature of the substrate during the reduced pressure drying is preferably 10 to 150 ℃, more preferably 15 to 100 ℃. The time for drying under reduced pressure is preferably 1 to 20 hours, more preferably 2 to 10 hours. The pressure at the time of drying under reduced pressure is preferably 10^-6～9.9x10⁴Pa, more preferably 10^-5～10⁴Pa。

The composition thus dried can be shaped into a predetermined shape or a pattern shape as required.

(mode of solution method)

Hereinafter, a preferred embodiment of the solution method will be described with reference to the drawings, but the solution method is not limited to the following embodiment.

As an embodiment of the solution method, the following method can be mentioned: a composition (hereinafter, also referred to as "coating liquid") is dropped (applied) to a part of the surface of a substrate so as to be in contact with the substrate and a member disposed on the substrate (hereinafter, also referred to as "member"), and then the dropped coating liquid is dried. The substrate and the member used in this embodiment will be described later.

In this embodiment, the member is maintained in a state of being in contact with the substrate, or in a state of being not fixed to the substrate and constantly maintaining the distance therebetween.

As long as the substrate and the member maintain the above-described states, the relative positional relationship between the substrate and the member may be fixed or changed when the coating liquid is dropped or dried. From the viewpoint of production efficiency, it is preferable to change the relative positional relationship between the substrate and the member with respect to the substrate moving member. In addition, from the viewpoint of the film quality and crystal size of the obtained organic semiconductor film, it is preferable to fix the relative positional relationship between the substrate and the member by keeping the member stationary with respect to the substrate.

The method of dropping the coating liquid in the present embodiment is not particularly limited. From the viewpoint that the thickness of the film of the coating liquid on the substrate is easily reduced and drying is easily started from the end of the film of the coating liquid, it is preferable to drop one drop of the coating liquid or (in the case of dropping two or more drops of the coating liquid) one drop at a time of dropping the coating liquid. When the coating liquid is dropped, the volume of one drop of the coating liquid is preferably 0.01 to 0.2mL, more preferably 0.02 to 0.1 mL.

By dropping the coating liquid onto a part of the surface of the substrate so as to contact both the substrate and the member, the thickness of the end portion of the film of the coating liquid can be made thin.

The contact angle (25 ℃) of the coating liquid with respect to the substrate is not particularly limited, but is preferably 0 to 90 °, and more preferably 10 to 20 °. The contact angle of the coating liquid with respect to the substrate was obtained by measuring the angle between the droplet and the substrate after dropping the coating liquid and 1 second had elapsed. Specifically, the liquid volume was set to 1.0 μ L or more, and the static contact angle was measured by a liquid drop method using a teflon (registered trademark) needle. The different substrates treated in the same manner as above were measured a plurality of times (usually 5 times), and the average value thereof was calculated and used as the contact angle.

The coating liquid preferably forms a meniscus with respect to the member, and more preferably forms a meniscus having a concave shape with respect to the member from the viewpoint of film quality.

Hereinafter, a method of applying the coating liquid while constantly maintaining the distance between the substrate and the member in the present embodiment will be described with reference to fig. 3. Fig. 3 is a schematic view showing an example of a method for forming an organic semiconductor film of an organic TFT.

In this method, first, the substrate 42 and the member 43 are disposed at predetermined positions. Specifically, the substrate 42 and the member 43 are disposed at the positions shown in fig. 3(a), respectively, before the coating liquid 41 is dropped onto the substrate. At this time, the distance between the substrate 42 and the member 43 not in contact with the substrate 42 is constantly maintained. The distance between the substrate 42 and the member 43 is not generally determined because it differs depending on the coating amount of the coating liquid, viscosity, and the like, but can be set as appropriate.

Next, as shown in fig. 3B, the coating liquid 41 is dropped onto a part of the surface of the substrate 42 (the vicinity of the facing portion between the substrate 42 and the member 43) so as to contact both the substrate 42 and the member 43.

Then, the coating liquid 41 is dried in a state where the relative positional relationship between the substrate 42 and the member 43 is fixed (fig. 3 (C)). The drying method is not particularly limited, but the drying method of the above composition is preferred. Thus, on the substrate 42, the coating liquid 41 is dried from both end portions (edges) having a small film thickness toward the inside, and the specific compound is crystallized. This makes it possible to arrange the specific compound at a predetermined position as a crystal having a large size.

After drying the coating liquid 41, the member 43 is peeled off from the substrate 42, for example, by pulling up the member 43 perpendicularly to the main surface of the substrate 42. Thus, an organic semiconductor film with good film quality can be formed without leaving a trace of the member 43 on the formed crystal.

In this manner, an organic semiconductor film composed of a crystal of a specific compound can be formed.

Hereinafter, a method of applying a coating liquid in a state where a substrate and a member are brought into contact in the present embodiment will be described with reference to fig. 4. Fig. 4 is a schematic diagram for explaining another example of a method for forming an organic semiconductor film of an organic TFT.

In this method, first, the substrate 42 and the member 43 are placed in contact. Specifically, the substrate 42 and the member 43 are disposed at the positions shown in fig. 4(a), respectively, before the coating liquid 41 is dropped onto the substrate 42.

Next, as shown in fig. 4(B1) and 4(B2), the coating liquid 41 is dropped onto a part of the surface of the substrate 42 (the vicinity of the contact portion between the substrate 42 and the member 43) so as to contact both the substrate 42 and the member 43. At this time, as shown in fig. 4(B2), the coating liquid 41 preferably surrounds the contact portion of the substrate 42 and the member 43. In addition, fig. 4(B1) is a front view of the substrate coated with the coating liquid, and fig. 4(B2) is a top view of the substrate coated with the coating liquid. The three-dimensional coordinates (X, Y, Z) are shown in fig. 4(B1) and fig. 4 (B2).

Then, in a state where the relative positional relationship between the substrate 42 and the member 43 is fixed, the coating liquid 41 is preferably dried as described above (fig. 4 (C)). The drying method is not particularly limited, but the drying method of the above composition is preferred. Thus, on the substrate 42, the coating liquid 41 is dried from the edge having a small film thickness toward the inside, and the specific compound is crystallized. This makes it possible to arrange the specific compound at a predetermined position as a crystal having a large size.

After drying the coating liquid 41, the member 43 is peeled off from the substrate 42, for example, by pulling up the member 43 perpendicularly to the main surface of the substrate 42. Thus, as shown in fig. 4(D), the organic semiconductor film 5 composed of the crystal of the specific compound having good film quality can be formed without leaving a trace of the member 43 on the crystal of the specific compound.

From the viewpoint of film quality and the viewpoint of not requiring a mechanism for holding the member 43 and being able to maintain the distance (contact state) of the member 43 with respect to the substrate 42, the method of applying the coating liquid in a state where the substrate 42 and the member 43 are brought into contact is more preferable than the method of applying the coating liquid in a state where the distance between the substrate 42 and the member 43 is constantly maintained.

Next, another method of applying the coating liquid in a state where the substrate and the member are brought into contact in the present embodiment will be described with reference to fig. 5. Fig. 5 is a schematic diagram for explaining another example of a method for forming an organic semiconductor film of an organic TFT.

This method is different from the method shown in fig. 4 in that crystallization of a specific compound is promoted by moving the member 43 relative to the substrate 42 while keeping the distance between the substrate 42 and the member 43 constant.

In this method, first, the substrate 42 and the member 43 are placed in contact. Specifically, the substrate 42 and the member 43 are disposed at the positions shown in fig. 5(a), respectively, before the coating liquid 41 is dropped onto the substrate 42.

Next, as shown in fig. 5(B), the coating liquid 41 is dropped onto a part of the surface of the substrate 42 (the vicinity of the contact portion of the substrate 42 and the member 43) so as to contact both the substrate 42 and the member 43. At this time, as shown in fig. 4(B2), the coating liquid 41 preferably surrounds the contact portion of the substrate 42 and the member 43.

Then, the member 43 is moved relative to the substrate 42 while constantly maintaining the distance between the substrate 42 and the member 43, and the coating liquid 41 is dried. For example, the member 43 is moved relative to the substrate 42 in the direction of the arrow (negative X-axis direction) in fig. 5C. The coating liquid 41 is dried from the end portion (positive X-axis direction) of the member 43 on the opposite side to the moving direction toward the moving direction (negative X-axis direction), thereby crystallizing the specific compound. This makes it possible to arrange the specific compound at a predetermined position as a crystal having a large size.

After drying the coating liquid 41, the member 43 is peeled off from the substrate 42, for example, by pulling up the member 43 perpendicularly to the main surface of the substrate 42. Thus, an organic semiconductor film made of a specific compound having good film quality can be formed without leaving a trace of the member 43 on a crystal of the specific compound.

The substrate 42 used in this embodiment corresponds to a substrate of an organic TFT, and is preferably a substrate on which a gate insulating film is formed.

The member 43 used in the present embodiment is not particularly limited, but the material of the member 43 is preferably an inorganic material (more preferably glass, quartz, or silicon) or a plastic (more preferably teflon (registered trademark), polyethylene, or polypropylene), and more preferably glass.

The shape of the member 43 used in the present embodiment is not particularly limited as long as it has a smooth surface facing the substrate 42, but is preferably a rectangular parallelepiped.

Fig. 6 is a schematic diagram showing an example of the substrate 42 and the member 43 used in the present embodiment. In fig. 6, the member 43 has a rectangular parallelepiped shape, d and w respectively indicate the lengths of one side and the other side of the surface of the member 43 facing the substrate 42, and h indicates the height of the member 43.

The size of the member 43 used in the present embodiment is not particularly limited. In the case where the member 43 is a rectangular parallelepiped as shown in fig. 6, the lower limit value of the length (d and W in fig. 6) of one side and the other side of the surface of the member 43 facing the substrate 42 with respect to the length of one side of the main surface (the surface on which the coating liquid is applied) of the substrate 42 is preferably 0.1% or more, more preferably 1% or more, further preferably 10% or more, and particularly preferably 20% or more. The upper limit of the length of one side and the other side of the main surface of the substrate 42 is preferably 80% or less, more preferably 70% or less, and still more preferably 50% or less. The height (h in FIG. 6) of the member 43 is preferably 1 to 50mm, more preferably 5 to 20 mm. Further, the ratio h/d of the height h to the length d of the member 43 is preferably 0.01 to 10, and more preferably 0.1 to 5 from the viewpoint of the arrangement stability of the member 43. The ratio w/d of the length w to the length d of the member 43 is preferably 1 to 1000, and more preferably 5 to 100 from the viewpoint of being able to crystallize a specific compound in a wide range.

In this manner, crystals of the specific compound can be precipitated to form the organic semiconductor film. Whether or not the crystals of the specific compound have precipitated can be confirmed by observing the organic semiconductor film using a polarized light microscope (trade name: Eclipse LV100N POL (transmission/reflection illumination type), Nikon Corporation, eyepiece: magnification 10 times, objective: magnification 5 to 20 times).

< use of organic TFT >

The use of the organic TFT is not particularly limited, and the organic TFT can be used for electronic paper, a display device, a sensor, and an electronic tag.

Examples

The present invention will be described in more detail with reference to examples. The materials, the amounts used, the ratios, the contents of the treatment and the flow of the treatment shown in the following examples may be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention should not be construed restrictively by the specific examples shown below.

[ composition ]

< production of the composition of example 1 >

A mixture solution was prepared by mixing the following compound (1) (1.0mg) for forming an organic semiconductor film with chloroform/1, 1,1,3,3, 3-hexafluoro-2-propanol (HFIP) solvent (mixing ratio (volume ratio): chloroform/HFIP ═ 4/1) so that the total amount became 10 g.

The mixture was subjected to ultrasonic irradiation (15 minutes) at room temperature to prepare a composition of example 1.

[ chemical formula 33]

< production of other composition >

Various compositions of examples and comparative examples were prepared in the same production process as that of the composition of example 1, except that the kind of the compound and/or the solvent for forming an organic semiconductor film used was changed.

The compounds for forming an organic semiconductor film used in the compositions of examples 12 and 13 have the same structure as the compounds for forming an organic semiconductor film used in the compositions of examples 1 to 11, but the purification process and degree of the synthesis of the compounds for forming an organic semiconductor film are different, and the purity is low.

< evaluation of solubility >

The resulting composition was visually observed, and the solubility of the composition was evaluated by the following criteria.

A: the compound for forming an organic semiconductor film is completely dissolved in the composition.

B: undissolved residue of a compound for forming an organic semiconductor film was observed in the composition

C: the compound for forming the organic semiconductor film is not dissolved in the composition

< evaluation of purity by liquid chromatography >

Using each composition, analysis was performed under the following conditions, and the area ratio of a peak derived from an object (compound for forming an organic semiconductor film) to the total peak surface area was calculated with the detection wavelength of 254nm, and evaluated under the following criteria.

A: the area ratio of the object is 99% or more

B: the area ratio of the object is more than 95% and less than 99%

C: the area ratio of the object is less than 95%

D: since the object is insoluble, detection cannot be performed

A chromatographic column: two TOSOH CORPORATION TSKgel Silica-150 particles with a diameter of 5 μm and a column size of 4.6mm I.D. times 25cm were used

Eluent: chloroform/hexafluoroisopropanol 9/1

Flow rate: 0.8mL/min,

Injection amount: 10 μ L

Column temperature: 25 deg.C

Detection wavelength: 254nm

[ organic thin film transistor ]

< manufacture of organic thin film transistor >

As a substrate for FET characteristic measurement, an n-type silicon substrate (thickness: 0.4mm, equivalent to substrate 1 provided with gate electrode 2) 1 having SiO on the surface thereof was prepared₂A substrate (size: 25 mm. times.25 mm) of the thermally oxidized film (thickness: 200nm) of (1). The surface of the thermal oxide film (gate insulating film 3) of the substrate was subjected to Ultraviolet (UV) -ozone cleaning, and then treated with β -phenethyltrimethoxysilane.

A glass member having dimensions of 10mm in length by 2mm in width by 5mm in height was prepared. As shown in fig. 4(a), the member 43 shown in fig. 4 is disposed in a state of being in contact with a center portion of a β -phenylethyltrimethoxysilane treated surface of the substrate 1.

Next, 1 drop of the composition (about 0.05mL) prepared by the above method was dropped onto the substrate 1 (indicated by reference numeral 42 in fig. 4) at room temperature by using a pipette from the side of the member B in the vicinity of the contact portion between the substrate 42 and the member 43 so as to contact the base 42 and the member 43, as shown in fig. 4 (a). As shown in fig. 4(B1) and 4(B2), the coating liquid surrounds the contact portion, and forms a concave meniscus at the interface with the member 43.

As shown in fig. 4(C), the coating liquid 41 is dried at room temperature while the positional relationship between the substrate 42 and the member 43 is still maintained in a state where the substrate 42 and the member 43 are in contact with each other. Then, the mixture was passed at 60 ℃ and 10 DEG C^-3The film was dried under reduced pressure under Pa for 8 hours, to form a crystalline film of the organic semiconductor film. Next, the member 43 is pulled up perpendicularly to the substrate 42, and is peeled off from the substrate 42. As a result, the ring-shaped organic semiconductor film 5 having a uniform film thickness (film thickness: 10 to 50nm) shown in FIG. 4D is formed.

The crystal of the compound (compound for forming an organic semiconductor film) was precipitated as a result of confirming the obtained organic semiconductor film 5 by observation with a polarizing microscope Eclipse LV100N POL (transmission/reflection illumination type, manufactured by Nikon Corporation, eyepiece: 10 times magnification, objective: 5 to 20 times magnification).

A mask having a predetermined opening is placed on the organic semiconductor film 5 thus obtained, and gold is evaporated, whereby a source electrode 4A and a drain electrode 4B (both having a thickness of 40nm, a gate width W of 2mm, a gate length L of 50 μm, and a ratio W/L of 40) are formed, respectively. In this manner, an organic thin film transistor (referred to as OTFT in each table) T for measuring FET characteristics was manufactured.

< evaluation of organic thin film transistor >

The carrier mobility of each of the manufactured organic thin film transistors was evaluated at a normal pressure of 1 atmosphere (temperature: room temperature) using a Semiconductor parameter analyzer (4156C, manufactured by Agilent corporation) to which a semi-automatic detector (AX-2000, manufactured by Vector Semiconductor co., ltd.) was connected.

(evaluation of Carrier mobility (relative mobility))

1. Measurement of Carrier mobility μ after production

A voltage of-80V is applied between the source electrode and the drain electrode of each organic thin film transistor, and a gate voltage is changed in a range of +20V to-100V, using a voltage representing a drain current I_dThe carrier mobility μ (cm) was calculated by the following equation²/Vs)。

I_d＝(w/2L)μC_i(V_g-V_th)²

Wherein L represents a gate length, w represents a gate width, μ represents a carrier mobility, and C_iDenotes the capacity per unit area, V, of the gate insulating film_gDenotes the gate voltage, V_thRepresenting the threshold voltage.

Relative mobilities were calculated according to the following equations based on the mobility of example 1 (calculated using an organic thin film transistor manufactured using the composition of example 1), and evaluated according to the following criteria.

The higher the carrier mobility μ is, the more preferable is the C class or more, the more preferable is the B class or more, and the more preferable is the a class in this test.

Relative mobility ═ mobility of (example or comparative example)/(mobility of example 1)

A: relative mobility of 1.0 or more

B: relative mobility of 0.5 or more and less than 1.0

C: relative mobility of 0.1 or more and less than 0.5

D: relative mobility less than 0.1

[ results ]

The results are shown in Table 1.

In table 1, the column "structure" indicates whether or not the structure of the compound for forming an organic semiconductor film contained in the composition is any of (X), (Y), and (Z) shown below.

The column "group" indicates a group of the structure, X, when the structure of the compound for forming an organic semiconductor film is (X) or (Y)¹，X²、Y¹、Y²The structure of (1). In addition, "Ph" is a phenyl group. And, by "C₅H₁₁”“C₈H₁₇”“CH₂CH₂C₆F₁₃All the groups denoted by "are linear groups.

The column "solvent" indicates the kind (upper row) and volume ratio (lower row) of the solvent contained in the composition. In the case of compositions containing only one solvent, the volume ratio is not described.

In the column of "solvent", the solvent described in the column of "a" is an alcohol represented by the formula (S1), and the solvent described in the column of "B" is an organic solvent other than the above.

[ chemical formula 34]

[ Table 1]

[ Table 2]

HFIP-hexafluoroisopropanol

HFMP ═ 1,1,1,3,3, 3-hexafluoro-2-methyl-2-propanol

NFTB is nonafluorotert-butanol

HFPP ═ 1,1,1,3,3, 3-hexafluoro-2-phenyl-2-propanol

TFE-2, 2, 2-trifluoroethanol

TCE-1, 1,2, 2-tetrachloroethane

THF ═ tetrahydrofuran

PhCl ═ chlorobenzene

PhCN ═ benzonitrile

From the results shown in table 1, it was confirmed that: when the composition of the present invention is used, an organic thin film transistor having excellent carrier mobility can be produced even under low temperature conditions.

Then, it was confirmed that: the composition of the present invention can dissolve the composition for forming an organic semiconductor film well, can be analyzed by liquid chromatography, can easily confirm and/or adjust the purity of the composition, and can easily realize high performance and quality stabilization of an organic thin film transistor.

From the results of examples 19 and 18 and the like, it was confirmed that: when the composition contains an organic solvent other than the alcohol represented by the formula (S1), the solubility of the composition and the carrier mobility of the obtained organic thin film transistor are more excellent.

From comparison of examples 16 and 17, etc.: when the content of the alcohol represented by the formula (S1) relative to the total content of the solvent (the total content of the alcohol represented by the formula (S1) and the organic solvent other than the alcohol represented by the formula (S1)) is 10% by volume or more, the solubility of the composition and the carrier mobility of the obtained organic thin film transistor are more excellent.

From comparison of examples 1 to 8 with examples 9 to 11 and 24, etc.: when the organic solvent other than the alcohol represented by formula (S1) is a compound composed of only 1 or more atoms selected from the group consisting of carbon atoms, hydrogen atoms, and halogen atoms, the solubility of the composition and the carrier mobility of the resulting organic thin film transistor are more excellent.

From comparison of examples 1, 12 and 13, etc.: when the purity of the specific compound is high, the obtained organic thin film transistor is more excellent in carrier mobility.

From comparison of example 1 and example 23, etc., it was confirmed that: b in specific compounds¹¹～B¹⁸In the presence of B in which is-N ═¹¹～B¹⁸In the case of (2), the obtained organic thin film transistor is more excellent in carrier mobility.

Description of the symbols

1-substrate, 2-gate electrode, 3-gate insulating film, 4A-source electrode, 4B-drain electrode, 5-organic semiconductor film (organic semiconductor layer), 6-sealing layer, 10, 20-organic thin film transistor (organic TFT), 41-coating liquid, 42-substrate, 43-component.