阅读说明：本技术 晶圆恒温研磨系统、晶圆恒温控制方法及可读存储介质 (Wafer constant temperature grinding system, wafer constant temperature control method and readable storage medium ) 是由 于明非 龚昌鸿 陈建勋 于 2021-09-29 设计创作，主要内容包括：本发明公开了一种晶圆恒温研磨系统,包括晶圆研磨装置、温度监控单元和温度控制单元；所述温度监控单元用于实时测量晶圆研磨装置的温度,当所述晶圆研磨装置的温度超过预设温度后,向所述温度控制单元发送降温指令；所述温度控制单元接收到所述降温指令后,启动降温装置使所述晶圆研磨装置降温。本发明提供一种控制简单,成本较低的晶圆恒温研磨系统,实现研磨温度稳定,从而提高研磨速度和研磨平整度。(The invention discloses a wafer constant-temperature grinding system, which comprises a wafer grinding device, a temperature monitoring unit and a temperature control unit, wherein the wafer grinding device is used for grinding a wafer; the temperature monitoring unit is used for measuring the temperature of the wafer grinding device in real time, and sending a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature; and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device. The invention provides a wafer constant-temperature grinding system which is simple to control and low in cost, and realizes stable grinding temperature, so that the grinding speed and the grinding flatness are improved.)

1. A wafer constant temperature grinding system is characterized by comprising a wafer grinding device, a temperature monitoring unit and a temperature control unit;

the temperature monitoring unit is used for measuring the temperature of the wafer grinding device in real time, and sending a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature;

and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device.

2. The wafer constant temperature polishing system of claim 1, wherein the wafer polishing apparatus comprises:

the grinding platform comprises a grinding disc and a grinding pad arranged on the grinding disc; the temperature monitoring unit is used for measuring the temperature of the grinding pad in real time;

the wafer bearing head is used for bearing a wafer.

3. The system of claim 2, wherein the temperature control unit comprises a heat pipe disposed in a polishing disk of the wafer polishing apparatus.

4. The wafer thermal polishing system of claim 3,

the diameter of the grinding disc is 30 feet, and the number and the size of the heat pipes are respectively as follows:

1 first heat pipe with the length of 30 feet is arranged at the center of the grinding disc;

2 second heat pipes 25.4 feet in length and distributed on two sides of the first heat pipe; the end of the second heat pipe is aligned with the edge of the grinding disc;

2 third heat pipes 10.77 feet in length were distributed on either side of the second heat pipe, with the ends of the third heat pipes aligned with the edge of the abrasive disk.

5. The system of claim 1, wherein the predetermined temperature is 30 ℃ when the material to be removed is non-metallic.

6. The system of claim 1, wherein the predetermined temperature is 40-50 ℃ when the material to be removed by polishing is metal.

7. The wafer constant temperature polishing system of claim 2, wherein the wafer polishing apparatus comprises:

a polishing liquid jetting device for jetting polishing liquid;

and the brushing device is used for brushing the grinding platform.

8. A method of controlling the temperature of a wafer using the system of any one of claims 1-7, comprising:

step S1, measuring temperature; the temperature monitoring unit measures the temperature of the wafer grinding device in real time, and sends a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature;

step S2, sending a cooling instruction; and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device.

9. A computer readable storage medium storing instructions that, when executed, implement the wafer thermostat control method of claim 8.

Technical Field

The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to a wafer constant temperature polishing system, a wafer constant temperature control method, and a readable storage medium.

Background

Chemical Mechanical Polishing (CMP), also known as chemical mechanical polishing, is based on the principle that the process technology combining chemical etching and mechanical removal mainly comprises the following steps: metal polishing and non-metal polishing, such as Silicon polishing (Poly CMP), Silicon oxide polishing (Silicon oxide CMP), Silicon carbide polishing (Silicon carbide CMP), tungsten polishing (W CMP), and copper polishing (Cu CMP), and the like. The grinding device includes: polishing Slurry (Slurry), polishing Pad (Pad), polishing disk (plate), cleaning Brush (Brush), and Chemical cleaning and protecting agent (Chemical).

With the upgrading of wafer process technology and the shrinking of the sizes of the conductive lines and the gate electrodes, the requirement of the photolithography technology on the flatness of the wafer surface is higher and higher. In the chemical mechanical polishing process, the temperature of a polishing Pad (Pad) fluctuates to a certain extent along with the change of physical friction, chemical reaction and the like along with the progress of CMP polishing; as shown in fig. 1, the temperature variation of the wafers during the whole polishing process can reach about 40 ℃.

The temperature condition changes have a crucial influence on Chemical Mechanical Polishing (CMP), and if the temperature of the polishing Pad (Pad) is too high, the polishing speed and the polishing flatness during polishing cannot reach the best conditions.

Disclosure of Invention

The invention aims to solve the technical problem of providing a wafer constant-temperature grinding system which is simple to control and low in cost, and realizes stable grinding temperature, so that the grinding speed and the grinding flatness are improved.

In order to solve the technical problem, the invention provides a wafer constant-temperature grinding system, which comprises a wafer grinding device, a temperature monitoring unit and a temperature control unit;

the temperature monitoring unit is used for measuring the temperature of the wafer grinding device in real time, and sending a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature;

and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device.

Preferably, the wafer polishing apparatus includes:

the grinding platform comprises a grinding disc and a grinding pad arranged on the grinding disc; the temperature monitoring unit is used for measuring the temperature of the grinding pad in real time;

the wafer bearing head is used for bearing a wafer.

Preferably, the temperature control unit comprises a heat pipe disposed in a polishing disk of the wafer polishing apparatus.

Preferably, the diameter of the grinding disc is 30 feet, and the number and the size of the heat pipes are respectively as follows:

1 first heat pipe with the length of 30 feet is arranged at the center of the grinding disc;

2 second heat pipes 25.4 feet in length and distributed on two sides of the first heat pipe; the end of the second heat pipe is aligned with the edge of the grinding disc;

2 third heat pipes 10.77 feet in length were distributed on either side of the second heat pipe, with the ends of the third heat pipes aligned with the edge of the abrasive disk.

Preferably, when the material to be removed by grinding is non-metal, the predetermined temperature is 30 ℃.

Preferably, when the material to be removed by grinding is metal, the preset temperature is 40-50 ℃.

Preferably, the wafer polishing apparatus includes:

a polishing liquid jetting device for jetting polishing liquid;

and the brushing device is used for brushing the grinding platform.

The invention also discloses a wafer constant temperature control method, which comprises the following steps:

step S1, measuring temperature; the temperature monitoring unit measures the temperature of the wafer grinding device in real time, and sends a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature;

step S2, sending a cooling instruction; and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device.

The invention also discloses a computer readable storage medium for storing instructions which, when executed, implement the wafer constant temperature control method of claim 8.

Compared with the prior art, the invention provides a technical scheme with simple control and lower cost, and realizes stable grinding temperature, thereby improving the grinding speed and the grinding flatness.

Drawings

FIG. 1 is a graph illustrating temperature variations of a plurality of wafers during a polishing process according to the prior art.

FIG. 2 is a schematic view of a wafer polishing system according to the present invention.

FIG. 3 is a schematic structural diagram of a wafer polishing apparatus according to the present invention.

FIG. 4 is a schematic diagram of the arrangement of heat pipes in the wafer-polishing system according to the present invention.

Description of the reference numerals

10 wafer grinding device 20 temperature monitoring unit

30 temperature control unit 11 grinding platform

12 abrasive liquid jet device 13 brushing device

14 wafer carrier head 111 polishing disk

112 polishing pad 113 heat pipe

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.

Example one

The invention discloses a wafer constant temperature grinding system, as shown in fig. 2, comprising a wafer grinding device 10, a temperature monitoring unit 20 and a temperature control unit 30; the temperature monitoring unit 20 is configured to measure the temperature of the wafer polishing apparatus 10 in real time, and send a cooling instruction to the temperature control unit 30 when the temperature of the wafer polishing apparatus 10 exceeds a preset temperature; after receiving the cooling instruction, the temperature control unit 30 starts a cooling device to cool the wafer polishing apparatus 10.

By adopting the arrangement, the temperature of the wafer grinding device 10 can be measured in real time, and the temperature stability of the grinding pad can be controlled more accurately.

Specifically, as shown in fig. 3, the wafer polishing apparatus 10 may include a polishing platen 11, an abrasive liquid spraying apparatus 12, a brushing apparatus 13, and a wafer carrier head 14.

The grinding platform comprises a grinding disc 111 and a grinding pad 112 arranged on the grinding disc; the polishing liquid ejecting apparatus 12 is configured to eject polishing liquid (Slurry); the brushing device 13 is used for brushing the grinding platform 11; the wafer carrier head 14 is used for carrying a wafer.

The polishing pad 112 is formed of a material suitable for mechanical polishing of the substrate W. For example, the polishing pad 112 may be formed using polyurethane, polyurea (polyurea), polyester, polyether, epoxy, polyamide, polycarbonate, polyethylene, polypropylene, fluoropolymer, ethylene polymer, acrylic and methacrylic polymers, silicon, latex, nitrile rubber, isoprene rubber, butadiene rubber, and various copolymers of styrene, butadiene, and acrylonitrile.

The temperature monitoring unit is used for measuring the temperature of the grinding pad in real time; as an example, the temperature monitoring unit 20 may include a non-contact sensor configuration that measures temperature information of the polishing pad 112 in a non-contact manner. As the non-contact sensor, a general temperature sensor capable of measuring the surface temperature of the polishing pad 112 in a non-contact manner may be used, and the present invention is not limited or restricted by the kind of the non-contact sensor. For example, as the non-contact sensor, an Infrared Ray (IR) temperature sensor may be used. In contrast, the temperature monitoring unit 20 may also include a contact sensor configuration that contactingly measures temperature information of the polishing pad 112.

The temperature control unit includes a heat pipe 113 disposed in a polishing pad of the wafer polishing apparatus.

Specifically, as shown in fig. 4, when the diameter of the grinding disc is 30 feet, the number and the size of the heat pipes 113 are respectively:

1 first heat pipe with the length of 30 feet is arranged at the center of the grinding disc;

2 second heat pipes 25.4 feet in length and distributed on two sides of the first heat pipe; the end of the second heat pipe is aligned with the edge of the grinding disc;

2 third heat pipes 10.77 feet in length were distributed on either side of the second heat pipe, with the ends of the third heat pipes aligned with the edge of the abrasive disk.

When the material to be removed by grinding is non-metal, the preset temperature is 30 ℃.

When the material to be removed by grinding is metal, the preset temperature is 40-50 ℃.

Example two

The invention also discloses a wafer constant temperature control method using the wafer constant temperature grinding system of the first embodiment, which comprises the following steps:

step S1, measuring temperature; the temperature monitoring unit measures the temperature of the wafer grinding device in real time, and sends a cooling instruction to the temperature control unit when the temperature of the wafer grinding device exceeds a preset temperature;

step S2, sending a cooling instruction; and after the temperature control unit receives the cooling instruction, starting a cooling device to cool the wafer grinding device.

EXAMPLE III

The invention also discloses a computer readable storage medium for storing instructions, and the instructions can be executed to realize the wafer constant temperature control method of the second embodiment.

The method for controlling the temperature stability of the polishing pad comprises the following steps: the main influencing factor of the CMP is the polishing temperature, especially the metal polishing, which has a large influence on the chemical reaction, and this requires the control of the temperature condition, so that the present invention allows the whole polishing process to be at a stable temperature (tending to a stable straight line), thereby avoiding the influence of the temperature variation on the process, greatly improving the flatness (profile) and polishing time (Polish time) of the CMP, and simultaneously saving many other costs while improving the process stability, because the higher the temperature, the faster the polishing speed, the less the polishing time (Polish time), the less the consumption of consumables, and the more the cost is saved.

The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.