阅读说明：本技术 显色结构、显色结构的制备方法和防伪标识 (Color development structure, preparation method of color development structure and anti-counterfeiting mark ) 是由 史丽娜 王冲 牛洁斌 尚潇 李龙杰 陈生琼 于 2021-09-06 设计创作，主要内容包括：本申请实施例公开了一种显色结构、显色结构的制备方法和防伪标识,其中显色结构包括：基底层；椭圆孔阵列层,形成于所述基底层上,所述椭圆孔阵列层包括多个椭圆状的通孔；第一显色颗粒层,设置在所述基底层上,位于所述通孔内,当光线入射到显色结构时,光线会在第一显色颗粒层和椭圆孔阵列层之间产生生米氏共振现象,光线能够在第一显色颗粒层和椭圆孔阵列层之间进行耦合,进而使得显色结构有选择性地反射入射光,从而产生生动的颜色,本申请实施例通过在椭圆状的通孔内设置第一显色颗粒层能够提高颜色的分辨率,特别是能够在亚波长范围内具有高分辨,且与目前技术中的化学染料和颜料相比具有环境友好性以及良好的耐久性。(The embodiment of the application discloses a color development structure, a preparation method of the color development structure and an anti-counterfeiting mark, wherein the color development structure comprises: a base layer; an elliptical hole array layer formed on the base layer, the elliptical hole array layer including a plurality of elliptical through holes; first color development grained layer sets up on the stratum basale, be located in the through-hole, when light incides the color development structure, light can produce the resonance phenomenon of living mie between first color development grained layer and elliptical aperture array layer, light can couple between first color development grained layer and elliptical aperture array layer, and then make the selective reflection incident light of color development structure, thereby produce lively colour, this application embodiment can improve the resolution ratio of colour through set up first color development grained layer in the through-hole of ellipse shape, especially can have high resolution in the sub-wavelength range, and compare with chemical dye and pigment in the prior art and have environment friendly and good durability.)

1. A color developing structure, comprising:

a base layer;

an elliptical hole array layer formed on the base layer, the elliptical hole array layer including a plurality of elliptical through holes;

a first layer of chromogenic particles disposed on the base layer within the through-holes.

2. The color-developing structure according to claim 1, wherein the base layer comprises:

a substrate layer;

the metal thin film layer is arranged between the substrate layer and the elliptical hole array layer, and the first color developing particle layer is arranged on the metal thin film layer.

3. The color developing structure according to claim 2,

the material for preparing the metal thin film layer comprises at least one of aluminum, silver and gold, and the thickness of the metal thin film layer is 80-150 nanometers.

4. The color developing structure according to claim 2,

the material from which the substrate layer is made comprises silicon.

5. The color developing structure according to claim 1,

the material for preparing the elliptical hole array layer comprises a transparent insulating medium with the refractive index of 1.4-1.8, and the thickness of the elliptical hole array layer is 200-300 nanometers.

6. The color developing structure according to claim 5,

the oval through holes are distributed in a rectangular array mode, the X-axis arrangement period of the rectangular array arrangement is 360-700 nanometers, and the Y-axis arrangement period of the rectangular array arrangement is 360-700 nanometers.

7. The color developing structure according to claim 6,

the diameter of a short axis of the through hole is 230 to 525 nanometers, the diameter of a long axis of the through hole is 276 to 630 nanometers, and the ratio of the diameter of the short axis to the diameter of the long axis is 1.2: 1.

8. the color developing structure according to claim 6,

the material for preparing the elliptical hole array layer comprises PMMA photoresist.

9. The color developing structure according to claim 1,

the material from which the first layer of chromogenic particles is made comprises at least one of nanoscale gold, nanoscale silver, and nanoscale aluminum.

10. The color developing structure according to claim 1,

the first color developing particle layer has a filling thickness of 30 to 50 nm.

11. The color developing structure according to any one of claims 1 to 10, further comprising:

the second color developing particle layer is arranged on one side, away from the substrate layer, of the elliptical hole array layer, the second color developing particle layer and the first color developing particle layer are prepared through the same process, and the thickness of the second color developing particle layer is 30-50 nanometers;

a first dielectric thin film layer formed on the second colored particle layer and the first colored particle layer on the side away from the base layer;

and a second dielectric thin film layer disposed between the first color-developing particle layer and the base layer and between the elliptical hole array layer and the base layer.

12. The color-developing structure according to any one of claims 1 to 10,

the thickness of the first dielectric thin film layer is 3-5 nanometers, and the material for preparing the dielectric thin film layer comprises aluminum oxide;

the thickness of the second dielectric thin film layer is 5-10 nanometers, and the material for preparing the dielectric thin film layer comprises aluminum oxide.

13. A method for producing a color-developing structure, for producing the color-developing structure according to any one of claims 1 to 12, comprising:

providing a base layer;

forming a dielectric layer on the substrate layer;

etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer;

a first color-developing particle layer is provided in the elliptical through-hole.

14. The method of claim 13,

the step of forming a dielectric layer on the base layer comprises:

coating PMMA photoresist on the substrate layer to form a dielectric layer;

the step of etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer comprises the following steps:

and photoetching the PMMA photoresist layer through electron beams so as to form a plurality of oval through holes on the dielectric layer.

15. A security feature, comprising:

the chromogenic structure according to any one of claims 1 to 12.

Technical Field

The embodiment of the application relates to the technical field of structural colors, in particular to a color development structure, a preparation method of the color development structure and an anti-counterfeiting mark.

Background

Color is an important carrier of visual information in nature, and conventional chemical pigments produce color by light absorption or luminescence, but inevitably cause pollution to the environment. To overcome these disadvantages, the concept of structural color has been proposed, which is based on the scattering and interference of incident light with light generated by the nanoscale inhomogeneity of the material, and is more environmentally friendly than conventional chemical dyes and pigments, but the resolution of the current structural color is lower.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art or the related art.

To this end, a first aspect of the invention provides a color-developing structure.

The second aspect of the present invention provides a method for preparing a color-developing structure.

In a third aspect, the invention provides an anti-counterfeiting mark.

In view of this, according to a first aspect of embodiments of the present application, there is provided a color development structure, including:

a base layer;

an elliptical hole array layer formed on the base layer, the elliptical hole array layer including a plurality of elliptical through holes;

a first layer of chromogenic particles disposed on the base layer within the through-holes.

In one possible embodiment, the base layer includes:

a substrate layer;

the metal thin film layer is arranged between the substrate layer and the elliptical hole array layer, and the first color developing particle layer is arranged on the metal thin film layer.

In one possible embodiment, the material for preparing the metal thin film layer includes at least one of aluminum, silver and gold, and the thickness of the metal thin film layer is 80 nm to 150 nm.

In a possible embodiment, the material of which the substrate layer is made comprises silicon.

In one possible embodiment, the material for preparing the elliptical hole array layer comprises a transparent insulating medium with a refractive index of 1.4 to 1.8, and the thickness of the elliptical hole array layer is 200 nanometers to 300 nanometers.

In a possible embodiment, the plurality of elliptical through holes are distributed in a rectangular array, the X-axis arrangement period of the rectangular array is 360 nm to 700 nm, and the Y-axis arrangement period of the rectangular array is 360 nm to 700 nm.

In one possible embodiment, the minor axis diameter of the through hole is 230 nm to 525 nm, the major axis diameter of the through hole is 276 nm to 630 nm, and the ratio of the minor axis diameter to the major axis diameter is 1.2: 1.

in one possible embodiment, the material for preparing the elliptical hole array layer includes PMMA photoresist.

In one possible embodiment, the material from which the first layer of chromogenic particles is made comprises at least one of nanoscale gold, nanoscale silver, and nanoscale aluminum.

In one possible embodiment, the first layer of developing particles has a fill thickness of 30 to 50 nanometers.

In one possible embodiment, the color development structure further comprises:

the second color developing particle layer is arranged on one side, away from the substrate layer, of the elliptical hole array layer, the second color developing particle layer and the first color developing particle layer are prepared through the same process, and the thickness of the second color developing particle layer is 30-50 nanometers;

a first dielectric thin film layer formed on the second colored particle layer and the first colored particle layer on the side away from the base layer;

and a second dielectric thin film layer disposed between the first color-developing particle layer and the base layer and between the elliptical hole array layer and the base layer.

In one possible embodiment, the thickness of the first dielectric thin film layer is 3 nm to 10 nm, and the material for preparing the dielectric thin film layer comprises aluminum oxide;

the thickness of the second dielectric thin film layer is 4-10 nanometers, and the material for preparing the dielectric thin film layer comprises aluminum oxide.

According to a second aspect of the embodiments of the present application, there is provided a method for preparing a color-developing structure, the method for preparing a color-developing structure according to any one of the above-mentioned technical solutions, the method comprising:

providing a base layer;

forming a dielectric layer on the substrate layer;

etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer;

a first color-developing particle layer is provided in the elliptical through-hole.

In one possible embodiment of the method according to the invention,

the step of forming a dielectric layer on the base layer comprises:

coating PMMA photoresist on the substrate layer to form a dielectric layer;

the step of etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer comprises the following steps:

and photoetching the PMMA photoresist layer through electron beams so as to form a plurality of oval through holes on the dielectric layer.

According to a third aspect of the embodiments of the present application, an anti-counterfeit mark is provided, including:

the color-developing structure according to any one of the above technical solutions.

Compared with the prior art, the invention at least comprises the following beneficial effects: the color development structure provided by the embodiment of the application comprises a substrate layer, an elliptical hole array layer and a first color development particle layer which are arranged on the substrate layer, wherein the first chromogenic particle layer is positioned in the elliptical through hole of the elliptical hole array layer, a Fabry-Perot cavity is formed between the first chromogenic particle layer and the inner wall of the through hole, when light is incident to the color development structure, the light generates a Mie resonance phenomenon between the first color development particle layer and the elliptical hole array layer, the light can be coupled between the first color development particle layer and the elliptical hole array layer, and then the color development structure selectively reflects incident light to generate vivid color, the embodiment of the application can improve the resolution of color by arranging the first color development particle layer in the elliptical through hole, in particular, high resolution in the sub-wavelength range, and environmental friendliness and good durability as compared with chemical dyes and pigments in the prior art.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

FIG. 1 is a schematic structural diagram of a color development structure of an embodiment provided in the present application;

FIG. 2 is a schematic block diagram of another angle of a color development structure according to an embodiment provided herein;

FIG. 3 is a schematic block diagram of yet another angle of a color rendering structure according to an embodiment provided herein;

FIG. 4 is a flow chart illustrating exemplary steps of a method for fabricating a color-developing structure according to one embodiment provided herein;

FIG. 5 is a flow chart of schematic steps of a method of making a chromogenic structure according to another embodiment provided herein;

fig. 6a to 6e are process flow diagrams of another embodiment of a method for fabricating a color-developing structure provided in the present application.

Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 3 and fig. 6a to 6e is:

100 base layers, 200 elliptical hole array layers, 300 first color particle layers, 400 second color particle layers, 500 first dielectric thin film layers, 600 second dielectric thin film layers;

110 substrate layers, 120 metal film layers and 210 through holes.

Detailed Description

In order to better understand the technical solutions described above, the technical solutions of the embodiments of the present application are described in detail below with reference to the drawings and the specific embodiments, and it should be understood that the specific features of the embodiments and the embodiments of the present application are detailed descriptions of the technical solutions of the embodiments of the present application, and are not limitations of the technical solutions of the present application, and the technical features of the embodiments and the embodiments of the present application may be combined with each other without conflict.

As shown in fig. 1 to 3, a first aspect of an embodiment of the present application proposes a color development structure, including: a base layer 100; an elliptical hole array layer 200 formed on the base layer 100, the elliptical hole array layer 200 including a plurality of elliptical through holes 210; the first color particle layer 300 is disposed on the substrate layer 100 and located in the through hole 210.

The color development structure provided by the embodiment of the application comprises a substrate layer 100, an elliptical hole array layer 200 and a first color development particle layer 300, wherein the elliptical hole array layer 200 and the first color development particle layer 300 are arranged on the substrate layer 100, the first color development particle layer 300 is arranged in an elliptical through hole 210 of the elliptical hole array layer 200, a fabry-perot cavity is formed between the first color development particle layer 300 and the inner wall of the through hole 210, when light enters the color development structure, the light can generate a mie resonance phenomenon between the first color development particle layer 300 and the elliptical hole array layer 200, the light can be coupled between the first color development particle layer 300 and the elliptical hole array layer 200, and further the color development structure selectively reflects incident light, so that vivid colors are generated, the embodiment of the application can improve the resolution of colors by arranging the first color development particle layer 300 in the elliptical through hole 210, particularly can have high resolution in a sub-wavelength range, and has environmental friendliness and good durability compared with chemical dyes and pigments in the prior art.

It is understood that the thickness of the first coloring particle layer 300 is lower than the height of the through-hole 210, i.e., the first coloring particle layer 300 fills a partial area of the through-hole 210.

It is understood that the color development of the color development structure can be controlled by adjusting the aperture of the elliptical through hole 210, the major axis diameter and the minor axis diameter of the ellipse, and thus the total class of the color development structure reflecting the incident light can be adjusted.

In some examples, the substrate layer 100 includes: a substrate layer 110; and a metal thin film layer 120 disposed between the substrate layer 110 and the elliptical hole array layer 200, and a first color-developing particle layer 300 disposed on the metal thin film layer 120.

The substrate layer 100 comprises a substrate layer 110 and a metal thin film layer 120 arranged on the substrate layer 110, the elliptical hole array layer 200 and the first color-developing particle layer 300 are both arranged on the metal thin film layer 120, the metal thin film layer 120 and the elliptical hole array layer 200 can form a Fabry-Perot cavity, the first color-developing particle layer 300 is located in the Fabry-Perot cavity, the metal thin film layer 120 can serve as a full-mirror-reflection part in the Fabry-Perot cavity, the resolution of a color-developing structure can be further improved, meanwhile, the elliptical hole array layer 200 and the first color-developing particle layer 300 can be supported through arrangement of the metal thin film layer 120, and mechanical strength can be improved.

In some examples, the material of which the metal thin film layer 120 is made includes at least one of aluminum, silver, and gold, and the thickness of the metal thin film layer 120 is 80 nm to 150 nm.

The material of the metal thin film layer 120 includes at least one of aluminum, silver and gold, gold and silver are noble metal materials and have stable chemical properties, and the aluminum material can form an oxide layer on the surface of the aluminum material in a natural state and also have strong chemical stability, so that the service life of the metal thin film layer 120 can be prolonged through the selection of aluminum, silver and gold, and the resolution of the color development structure can be improved.

The thickness of the metal thin film layer 120 is 80 nm to 150 nm, which can ensure that the metal thin film layer 120 and the elliptical hole array layer 200 can form a Fabry-Perot cavity, ensure that the metal thin film layer can be used as a full-reflection mirror part in the Fabry-Perot cavity, and ensure the color rendering performance of the color rendering structure.

In some examples, the material from which substrate layer 110 is made includes silicon.

The silicon substrate is easy to obtain and low in cost, is favorable for reducing the production cost of the color development structure, can play the role of supporting the metal thin film layer 120, the elliptical hole array layer 200 and the first color development particle layer 300, and does not influence the color development of the color development structure.

In some examples, the material from which the elliptical hole array layer 200 is made includes a transparent insulating medium having a refractive index between 1.4 and 1.8, and the elliptical hole array layer 200 has a thickness of 200 nanometers to 300 nanometers.

The material for preparing the elliptical hole array layer 200 comprises a transparent insulating medium with the refractive index of 1.4-1.8, the material selection range of the elliptical hole array layer 200 is determined, the transparent insulating medium between 1.4-1.8 is selected, so that the phenomenon of mie resonance can be generated between the elliptical hole array layer 200 and the first color developing particle layer 300 when light rays enter the color developing structure, the color developing structure can selectively reflect the incident light, and vivid colors can be generated.

As shown in fig. 3, the vertical direction is the Y-axis arrangement direction, the horizontal direction is the X-axis arrangement direction, P1 is the Y-axis arrangement period, and P2 is the X-axis arrangement period, in some examples, the plurality of elliptical through holes 210 are distributed in a rectangular array, the X-axis arrangement period of the rectangular array is 360 nm to 700 nm, and the Y-axis arrangement period of the rectangular array is 360 nm to 700 nm.

The plurality of elliptical through holes 210 are distributed in a rectangular array, and the first color particle layers 300 are arranged in the through holes 210, so that the first color particle layers 300 are also distributed in a rectangular array, the color development structure has a polarization conversion function, and x linearly polarized light reflected back through the structure can be converted into y linearly polarized light. The phenomenon can be clearly observed by passing light through the polarizer, then irradiating the light on the structure and then passing the reflected light through the analyzer, and the final effect is that the white light is converted into structural color with bright color after passing through the structure.

The X-axis arrangement period and the Y-axis arrangement period are both 360 nanometers to 700 nanometers, the layout mode of the elliptical through holes 210 on the elliptical hole array layer 200 is further defined, and the resolution of the color development structure can be guaranteed.

In some examples, the minor axis diameter of the via 210 is 230 nanometers to 525 nanometers, the major axis diameter of the via 210 is 276 nanometers to 630 nanometers, and the ratio of the minor axis diameter to the major axis diameter is 1.2: 1.

the minor axis diameter of the via 210 is 230 nm to 525 nm, the major axis diameter of the via 210 is 276 nm to 630 nm, and the ratio of the minor axis diameter to the major axis diameter is 1.2: 1, further defining the shape of the through-hole 210, the ratio of the minor axis diameter to the major axis diameter is 1.2: 1, so that the color development structure can have high resolution in the sub-wavelength range.

In some examples, the material from which the elliptical hole array layer 200 is made includes PMMA photoresist.

The material for preparing the elliptical hole array layer 200 comprises PMMA photoresist, the PMMA photoresist can be coated on the substrate layer 100 in the preparation process, and then the PMMA photoresist is subjected to photoetching, so that a plurality of elliptical through holes 210 can be formed on the PMMA photoresist, a plurality of elliptical through holes 210 arranged in an array can be formed in one process, the semiconductor processing process can be simplified, and the production cost can be reduced; on the other hand, the PMMA photoresist is low in cost, and the elliptical hole array layer 200 formed by preparing the PMMA photoresist can generate Mie resonance, so that the cost of the color development structure is reduced, and the color development structure is promoted.

In some examples, the material from which first layer of developing particles 300 is made includes at least one of nano-sized gold, nano-sized silver, and nano-sized aluminum.

Gold and silver are noble metal material chemical properties stable, and the aluminum product can form the oxide layer on the surface of aluminum product under natural state and also possess stronger chemical stability, consequently can improve the life of first color development grained layer 300 through the selection of aluminium, silver and gold, can improve the resolution ratio of kind of color development structure simultaneously.

In some examples, the fill thickness of first chromogenic particle layer 300 is 30 to 50 nanometers.

The filling thickness of the first color developing particle layer 300 is 30 nm to 50 nm, the filling thickness of the first color developing particle layer 300 is further determined, the resolution of the color developing structure can be improved, if the thickness of the first color developing particle layer 300 is less than 30 nm, the color development of the color developing structure is biased to black, the resolution of the color developing structure is possibly reduced, and the filling thickness of the first color developing particle layer 300 is greater than 50 nm, so that the process cost is increased on one hand, and the resolution of the color developing structure is reduced on the other hand.

In some examples, the color-developing structure further comprises: the second color particle layer 400 is arranged on one side of the elliptical hole array layer 200, which is far away from the substrate layer 100, the second color particle layer 400 and the first color particle layer 300 are prepared through the same process, and the thickness of the second color particle layer 400 is 30-50 nanometers; a first dielectric thin film layer 500 formed on the second colored particle layer 400 and the first colored particle layer 300 on the side away from the substrate layer 100; and a second dielectric thin film layer 600 disposed between the first color particle layer 300 and the substrate layer 100 and between the elliptical hole array layer 200 and the substrate layer 100.

The developing structure further comprises a second developing particle layer 400, the second developing particle layer 400 is arranged on one side, deviating from the substrate layer 100, of the elliptical hole array layer 200, a Fabry-Perot cavity can be formed between the second developing particle layer 400 and the elliptical hole array layer 200, when light rays enter the developing structure, part of the light rays can penetrate through the second developing particle layer 400, the other part of the light rays can be reflected by the second developing particle layer 400, and the second developing particle layer 400 can serve as a half-mirror in the Fabry-Perot cavity.

The second colored particle layer 400 and the first colored particle layer 300 are prepared through the same process, and the second colored particle layer 400 and the first colored particle layer 300 are simultaneously formed through one process, so that the production cost of the colored structure can be further reduced.

The thickness of the second coloring particle layer 400 is 30 nm to 50 nm, and the thickness of the second coloring particle layer 400 is relatively thin, so that when light is incident to the coloring structure, part of the light can transmit the second coloring particle layer 400, and the other part can be reflected by the second coloring particle layer 400.

The color developing structure further includes a first dielectric thin film layer 500 formed on the second color developing particle layer 400 and the first color developing particle layer 300, the first dielectric thin film layer 500 may protect the second color developing particle layer 400 and the first color developing particle layer 300, when the second color developing particle layer 400 and the first color developing particle layer 300 are made of aluminum, the first dielectric thin film layer 500 may be an oxide layer formed by oxidation of aluminum, and when the second color developing particle layer 400 and the first color developing particle layer 300 are made of silver, in order to prevent blackening of silver by oxidation, silicon oxide may be grown on the second color developing particle layer 400 and the first color developing particle layer 300 as a first dielectric layer to protect the second color developing particle layer 400 and the first color developing particle layer 300.

The color development structure further comprises a second medium thin film layer 600, the second medium thin film layer 600 is arranged on the substrate layer 100, the second medium thin film layer 600 can protect the metal thin film layer 120, when the metal thin film layer 120 is made of aluminum, the second medium thin film layer 600 can be an oxide layer formed by oxidation of the aluminum, when the metal thin film layer 120 is made of silver, in order to avoid blackening of silver oxidation, silicon oxide can be grown on the metal thin film layer 120 to protect the second color development particle layer 400 and the first color development particle layer 300 as the second medium layer.

In some examples, the first dielectric thin film layer 500 has a thickness of 3 nm to 10 nm, and the material for preparing the dielectric thin film layer includes alumina; the thickness of the second dielectric thin film layer 600 is 4 nm to 10 nm, and the material for preparing the dielectric thin film layer includes alumina.

The thickness of the first dielectric thin film layer 500 is 3 nanometers to 10 nanometers, and the thickness of the second dielectric thin film layer 600 is 4 nanometers to 10 nanometers, so that the thicknesses of the first dielectric thin film layer 500 and the second dielectric thin film layer 600 are lower, and not only can a protective effect be achieved, but also the color development of the color development structure cannot be influenced. The material for preparing the dielectric film layer comprises aluminum oxide, the material for preparing the dielectric film layer comprises aluminum oxide which can be directly obtained through aluminum oxidation, the preparation is simpler, and the production cost is favorably reduced.

As shown in fig. 4, according to a second aspect of the embodiments of the present application, there is provided a method for preparing a color-developing structure according to any one of the above-mentioned embodiments, the method comprising:

step 101: a base layer is provided.

Step 102: a dielectric layer is formed on the base layer.

Step 103: and etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer.

Step 104: a first color-developing particle layer is provided in the elliptical through-hole.

According to the preparation method of the color development structure, the dielectric layer is formed on the base layer at present, then the dielectric layer is etched, the elliptical hole array layer can be formed on the base layer, and finally the first color development particle layer is arranged in the through hole of the elliptical hole array layer, so that the color development structure can be formed. The color development structure comprises a substrate layer, an elliptical hole array layer and a first color development particle layer which are arranged on the substrate layer, wherein the first chromogenic particle layer is positioned in the elliptical through hole of the elliptical hole array layer, a Fabry-Perot cavity is formed between the first chromogenic particle layer and the inner wall of the through hole, when light is incident to the color development structure, the light generates a Mie resonance phenomenon between the first color development particle layer and the elliptical hole array layer, the light can be coupled between the first color development particle layer and the elliptical hole array layer, and then the color development structure selectively reflects incident light to generate vivid color, the embodiment of the application can improve the resolution of color by arranging the first color development particle layer in the elliptical through hole, in particular, high resolution in the sub-wavelength range, and environmental friendliness and good durability as compared with chemical dyes and pigments in the prior art.

In some examples, the step of forming a dielectric layer on the base layer includes: coating PMMA photoresist on the substrate layer to form a dielectric layer; the step of etching the dielectric layer to form a plurality of elliptical through holes on the dielectric layer comprises the following steps: and photoetching the PMMA photoresist layer through an electron beam so as to form a plurality of elliptical through holes on the dielectric layer.

By coating the PMMA photoresist layer on the substrate layer and preparing the dielectric layer based on the PMMA photoresist, on one hand, the process difficulty is reduced, and the implementation is facilitated; and on the other hand, the PMMA photoresist is low in cost, and the cost of the color development structure is favorably reduced.

And electron beams are used for photoetching the PMMA photoresist layer to form a plurality of oval through holes on the dielectric layer, so that the process difficulty is further reduced.

As shown in fig. 5, in some examples, a method of preparing a color-developing structure includes:

step 201: providing a base layer;

step 202: growing a first aluminum film layer on the substrate layer by ion beam sputtering;

step 203: placing the first aluminum film layer in the air for 1 hour to 2 hours to form an aluminum oxide ultrathin medium film on the first aluminum film layer;

step 204: spin-coating PMMA photoresist on the aluminum oxide ultrathin medium film to form a medium layer;

step 205: forming an elliptical hole array layer by electron beam photoetching of the dielectric layer;

step 206: growing a second aluminum film layer on the elliptical hole array layer through electron beam evaporation;

step 207: and (3) placing the first aluminum film layer in the air for 1 hour to 2 hours to form an aluminum oxide ultrathin medium film on the second aluminum film layer.

As shown in fig. 6a to 6e, the second aluminum thin film layer disposed on the substrate layer 100 is the first color particle layer 300, the second aluminum thin film layer disposed on the elliptical hole array layer 200 is the second color particle layer 400, and the aluminum oxide ultrathin medium thin film formed on the second aluminum thin film layer is the first medium thin film layer 500; the alumina ultra-thin dielectric film formed on the first aluminum film layer is the second dielectric film layer 600.

The color development structure prepared by the method comprises a substrate layer 100, an elliptical hole array layer 200 and a first color development particle layer 300, wherein the elliptical hole array layer 200 and the first color development particle layer 300 are arranged on the substrate layer 100, the first color development particle layer 300 is arranged in an elliptical through hole 210 of the elliptical hole array layer 200, a Fabry-Perot cavity is formed between the first color development particle layer 300 and the inner wall of the through hole 210, when light enters the color development structure, the light can generate a Mie resonance phenomenon between the first color development particle layer 300 and the elliptical hole array layer 200, the light can be coupled between the first color development particle layer 300 and the elliptical hole array layer 200, and further the color development structure selectively reflects the incident light, so that vivid colors are generated, according to the embodiment of the invention, the color resolution can be improved by arranging the first color development particle layer 300 in the elliptical through hole 210, particularly, the high resolution can be achieved in a sub-wavelength range, and has environmental friendliness and good durability compared with chemical dyes and pigments in the prior art.

According to a third aspect of the embodiments of the present application, an anti-counterfeit mark is provided, including: the color development structure according to any of the above technical means.

The anti-counterfeiting mark provided by the embodiment of the application comprises the color development structure of any technical scheme, so that the anti-counterfeiting mark has all the beneficial effects of the color development structure.

The anti-counterfeiting mark can be arranged on a semiconductor device, for example, on a chip, on one hand, the anti-counterfeiting mark can be used for identifying the authenticity of the chip, and on the other hand, the anti-counterfeiting mark can trace the source of the production of the chip.

In the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "front", "rear", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or unit must have a specific direction, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.