阅读说明：本技术 半导体装置的制造装置及制造方法 (Apparatus and method for manufacturing semiconductor device ) 是由 瀬山耕平 于 2020-11-12 设计创作，主要内容包括：半导体装置的制造装置(10)包括：平台(12),载置基板(100)；接合头(14),与所述平台(12)相向配置,将半导体芯片(110)接合于所述基板(100)；以及控制器(18),所述接合头(14)包含：附件(33),吸引保持所述半导体芯片(110)；以及加热部(31),装卸自如地保持所述附件(33),并对所述附件(33)进行加热,且具有第一加热区域(32a)、及在水平方向包围所述第一加热区域(32a)的第二加热区域(32b),所述控制器(18)独立地控制所述第一加热区域(32a)与第二加热区域(32b)的温度。(A semiconductor device manufacturing apparatus (10) includes: a stage (12) on which a substrate (100) is placed; a bonding head (14) which is disposed opposite to the stage (12) and bonds a semiconductor chip (110) to the substrate (100); and a controller (18), the bond head (14) comprising: an attachment (33) for holding the semiconductor chip (110) by suction; and a heating unit (31) that detachably holds the attachment (33), heats the attachment (33), and has a first heating region (32a) and a second heating region (32b) that horizontally surrounds the first heating region (32a), wherein the controller (18) independently controls the temperatures of the first heating region (32a) and the second heating region (32 b).)

1. An apparatus for manufacturing a semiconductor device, comprising:

a stage on which a substrate is placed;

a bonding head arranged opposite to the stage and bonding a semiconductor chip to the substrate; and

a controller for controlling the operation of the electronic device,

the bonding head includes:

an attachment for holding the semiconductor chip by suction; and

a heating unit which is detachably held to heat the attachment and has a first heating region and a second heating region surrounding the first heating region in a horizontal direction,

the controller independently controls the temperature of the first and second heating zones.

2. The manufacturing apparatus of semiconductor device according to claim 1, wherein said semiconductor device is characterized in that

The controller controls the amounts of heat release of the first heating area and the second heating area so that the in-plane temperature distribution of the semiconductor chip becomes uniform when bonding is performed.

3. The manufacturing apparatus of semiconductor device according to claim 2, wherein said semiconductor device is characterized in that

The bonding head is also provided with temperature sensors for detecting the temperatures of the first heating area and the second heating area respectively,

the controller stores the target temperature of the first heating area and the target temperature of the second heating area in advance, and controls the heat release amount of the first heating area and the second heating area according to the difference between the stored target temperature of the area and the area detection temperature of the temperature sensor.

4. The manufacturing apparatus of semiconductor device according to claim 3, wherein the semiconductor device is manufactured by using a method of manufacturing a semiconductor device according to claim 3

The bonding head further has: cooling paths provided corresponding to the first heating zone and the second heating zone and independent from each other, the cooling paths cooling the corresponding first heating zone and second heating zone by flowing a refrigerant,

the controller controls the heat release amount and the flow rate of the refrigerant according to a difference between the stored target temperature of the area and the area detection temperature of the temperature sensor.

5. The manufacturing apparatus of a semiconductor device according to claim 3 or 4, wherein the semiconductor device is manufactured by using a method of manufacturing a semiconductor device according to any one of the above claims

The controller is configured to execute a target acquisition process of acquiring a target temperature of the region before bonding the semiconductor chips,

in the target acquisition process, the controller may join a sample chip by the bonding head, acquire a temperature distribution of the sample chip at that time and respective region detection temperatures of the first heating region and the second heating region, and calculate region target temperatures of the first heating region and the second heating region based on the acquired temperature distribution of the chip and the region detection temperatures.

6. The manufacturing apparatus of a semiconductor device according to any one of claims 2 to 4, wherein the manufacturing apparatus is characterized in that

The zone target temperature of the first heating zone is lower than the zone target temperature of the second heating zone.

7. A method for manufacturing a semiconductor device, comprising:

a step of placing a substrate on the stage; and

a step of driving a bonding head movable relative to the stage to bond a semiconductor chip to the substrate, and

the bonding head has:

an attachment for holding the semiconductor chip by suction; and

a heating unit which detachably holds the attachment and heats the attachment, and which has a first heating region and a second heating region surrounding the first heating region in a horizontal direction,

a controller independently controls the temperature of the first and second heating zones while performing the bonding.

Technical Field

The present specification discloses an apparatus and a method for manufacturing a semiconductor device, in which one or more semiconductor chips are bonded (bonded) to a substrate to manufacture the semiconductor device.

Background

Conventionally, there has been known a semiconductor device manufacturing apparatus for manufacturing a semiconductor device by bonding one or more semiconductor chips to a substrate. In the manufacturing apparatus, a bonding tool is generally provided for holding the semiconductor chip by suction and bonding the semiconductor chip to a substrate or another semiconductor chip. The bonding tool is provided with a heating unit that is heated by a heating mechanism, and an attachment (attachment) that is detachably attached to the heating unit. The semiconductor chip is sucked and held by an attachment, and the attachment is appropriately replaced according to the size of the semiconductor chip to be handled, and the like. When bonding semiconductor chips, a bonding tool heats a semiconductor chip to be bonded while applying pressure.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2004-29576

Disclosure of Invention

Problems to be solved by the invention

Here, when bonding semiconductor chips, it is required that the temperature distribution of the object to be heated (for example, semiconductor chip or the like) be a target distribution. For example, in a flip chip bonder, a plurality of bumps formed on the bottom surface of a semiconductor chip are thermally fused to be bonded to electrodes formed on the surface of a substrate or another semiconductor chip. In this case, if the temperature distribution of the semiconductor chip is not uniform, the molten state of the bump varies depending on the portion, which causes problems such as poor bonding and non-uniformity in the amount of gap between the semiconductor chip and the substrate (or another semiconductor chip). Therefore, in the flip chip bonder, it is required that the temperature distribution of the semiconductor chip as the heating target object becomes uniform. Depending on the type of the object to be joined or heated, the peripheral edge of the object to be heated may be set to be higher in temperature than the central portion, or the central portion of the object to be heated may be set to be higher in temperature than the peripheral edge.

However, although the heat absorption rate of the heating target (for example, semiconductor chip) side differs depending on the portion, the conventional bonding tool is provided with only one heating system. On the other hand, the heat absorption rate of the heating target is generally higher near the peripheral edge than at the central portion. Therefore, the closer to the peripheral edge, the more likely the temperature of the object to be heated is to be reduced when heated by the bonding tool. That is, in the conventional technique, it is difficult to set the temperature distribution of the heating target object to a target distribution.

Patent document 1 discloses the following technique: an anisotropic conductive film is arranged on a peripheral edge portion for connection of a display panel, and the anisotropic conductive film is bonded to the peripheral edge portion by pressing the display panel with a heating tool for temporary pressure bonding while heating. In the patent document 1, in order to prevent a temporary pressure bonding failure at both ends of the anisotropic conductive film, a heating tool for temporary pressure bonding is divided into a main heating tool for pressing a middle portion of the anisotropic conductive film and an end heating tool for pressing both ends of the anisotropic conductive film, and the temperatures of the main heating tool and the end heating tool are controlled so that both ends of the anisotropic conductive film are heated to higher temperatures than the middle portion. The technique of patent document 1 is only a technique related to pressure bonding of an anisotropic conductive film, and cannot be applied to bonding of semiconductor chips.

Therefore, the present specification discloses a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of controlling the temperature distribution of a heating target at the time of bonding.

Means for solving the problems

The manufacturing apparatus of a semiconductor device disclosed in the present specification is characterized by including: a stage on which a substrate is placed; a bonding head arranged opposite to the stage and bonding a semiconductor chip to the substrate; and a controller, the bonding head comprising: an attachment for holding the semiconductor chip by suction; and a heating unit that detachably holds the attachment, heats the attachment, and has a first heating area and a second heating area that horizontally surrounds the first heating area, wherein the controller independently controls the temperatures of the first heating area and the second heating area.

In this case, the controller may control the amounts of heat release of the first heating region and the second heating region so that the in-plane temperature distribution of the semiconductor chip becomes uniform when bonding is performed.

The bonding head may further include temperature sensors for detecting temperatures of the first heating zone and the second heating zone, respectively, and the controller may store region target temperatures of the first heating zone and the second heating zone, respectively, and control amounts of heat release of the first heating zone and the second heating zone based on a difference between the stored region target temperature and a region detection temperature of the temperature sensor.

In addition, the bonding head may further include: and cooling paths which are provided corresponding to the first heating region and the second heating region and are independent of each other, and cool the corresponding first heating region and the second heating region by flowing a refrigerant, wherein the controller controls the heat release amount and the flow rate of the refrigerant according to a difference between the stored region target temperature and a region detection temperature in the temperature sensor.

The controller may be configured to execute a target acquisition process of acquiring the region target temperature before the semiconductor chip is bonded, wherein in the target acquisition process, the controller bonds a sample chip by the bonding head, acquires a temperature distribution of the sample chip at that time and the region detection temperatures of the first heating region and the second heating region, and calculates the region target temperatures of the first heating region and the second heating region based on the acquired temperature distribution of the chip and the region detection temperatures.

In addition, the target temperature of the region of the first heating region may be lower than the target temperature of the region of the second heating region.

Further, a method for manufacturing a semiconductor device disclosed in the present specification includes: a step of placing a substrate on the stage: and a step of driving a bonding head movable with respect to the stage to bond a semiconductor chip to the substrate, the bonding head having: an attachment for holding the semiconductor chip by suction; and a heating unit which detachably holds the attachment, heats the attachment, and has a first heating area and a second heating area surrounding the first heating area in a horizontal direction, wherein the controller independently controls the temperatures of the first heating area and the second heating area when the bonding is performed.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the manufacturing apparatus and manufacturing method of a semiconductor device disclosed in the present specification, the heating portion of the bonding head is divided into the first heating region and the second heating region, and the controller controls the temperatures of the first heating region and the second heating region independently, so that the temperature distribution of the heating target at the time of bonding can be controlled.

Drawings

Fig. 1 is a schematic diagram showing the structure of a manufacturing apparatus.

Fig. 2 is a schematic diagram of a semiconductor chip and a substrate.

Fig. 3 is a graph showing an example of the temperature distribution of the semiconductor chip.

Fig. 4 is a schematic diagram showing the structure of the bonding head.

Fig. 5 is a schematic plan view of a heating portion of the bonding head.

Fig. 6 is a graph showing a change with time of the area detection temperature when the semiconductor chip is bonded.

Fig. 7 is a flowchart showing the flow of the target acquisition process.

Fig. 8 is a schematic diagram showing a structure of a conventional bonding head.

Detailed Description

Hereinafter, the structure of the manufacturing apparatus 10 for a semiconductor device will be described with reference to the drawings. Fig. 1 is a schematic diagram showing the structure of a manufacturing apparatus 10. The manufacturing apparatus 10 manufactures a semiconductor device by bonding a plurality of semiconductor chips 110 to a substrate 100.

The manufacturing apparatus 10 has a pick-up unit (pick-up unit)12, a bond head 14, a platform 16, and a controller 18. The pickup unit 12 has: a push-up pin 20 for pushing up the semiconductor chip 110 mounted on the dicing tape (dicing tape) 120; and a pickup head 22 holding the semiconductor chip 110 pushed up with its bottom surface. The pickup head 22 is rotatable about a rotation axis O extending in the horizontal direction. The pick-up head 22 may be rotated by 180 degrees to reverse the picked-up semiconductor chip 110 by 180 degrees in the thickness direction. This causes the surface of the semiconductor chip 110 next to the dicing tape 120 to face upward.

The bonding head 14 is moved in a horizontal direction parallel to the upper surface of the stage 16 by an XY drive mechanism, not shown, and is moved in a vertical direction orthogonal to the horizontal direction by a Z-axis drive mechanism, not shown. The bonding head 14 is provided with an attachment (not shown in fig. 1) for holding the semiconductor chip 110 by suction, and a heater (not shown in fig. 1) for heating the attachment 33. The accessories 33 are selected according to the type of the semiconductor chip 110. The specific structure of the bonding head 14 will be described later.

Further, the first camera 26 is also provided in the bonding head 14. The first camera 26 is attached to the bonding head 14 in a posture in which the optical axis extends downward, and images the substrate 100 and the like placed on the stage 16. The controller 18 calculates the relative positional relationship between the bonding head 14 and the substrate 100 based on the image captured by the first camera 28, and positions the bonding head 14 based on the calculation result. The stage 16 supports the substrate 100 conveyed by a conveying mechanism, not shown, by vacuum suction. The stage 16 incorporates a heater (not shown) for heating the substrate 100 placed thereon.

The controller 18 controls driving of each unit of the manufacturing apparatus 10, and includes, for example, a processor that executes various calculations and a memory that stores various programs and data. The controller 18 drives the pickup unit 12 and the bonding head 14 to bond the plurality of semiconductor chips 110 to the substrate 100. The controller 18 controls the temperature of the heaters provided in the bonding head 14 and the stage 16 in order to appropriately heat the semiconductor chip 110 during the bonding, which will be described later.

Next, the semiconductor chip 110 operated by the manufacturing apparatus 10 will be briefly described. Fig. 2 is a schematic diagram of the semiconductor chip 110 and the substrate 100. On the bottom surface of the semiconductor chip 110, a metal protrusion called a bump 116 is formed. The bump 116 contains a conductive metal and melts at a predetermined melting temperature. A substrate electrode 102 is formed on the substrate 100 at a position corresponding to the bump 116. In manufacturing a semiconductor device, the bump 116 is melted and bonded to the substrate electrode 102.

A non-conductive film (hereinafter referred to as "NCF") 118 is attached to the bottom surface of the semiconductor chip 110 so as to cover the bumps 116. NCF 118 functions as an adhesive for bonding semiconductor chip 110 to substrate 100 or other semiconductor chip 110, and includes a nonconductive thermosetting resin, such as a polyimide resin, an epoxy resin, an acrylic resin, a phenoxy resin, or a polyether sulfone resin. The NCF 118 has a thickness greater than the average height of the bumps 116, and the bumps 116 are almost completely covered by the NCF 108. NCF 118 is a solid film at normal temperature, but when it exceeds a predetermined softening start temperature, it gradually reversibly softens to exhibit fluidity, and when it exceeds a predetermined curing start temperature, it irreversibly starts curing. Furthermore, the softening start temperature is lower than the hardening start temperature of NCF 118 and the melting temperature of bump 116.

When the semiconductor chip 110 is bonded to the substrate 100, a temporary pressure bonding step and a main pressure bonding step are performed. In the temporary bonding step, the semiconductor chip 110 mounted on the substrate 100 is heated and pressed at the temperature for temporary bonding. The temporary bonding temperature is higher than the softening start temperature of NCF 118 and lower than the melting temperature of bump 116 and the hardening start temperature of NCF 118. When heated to the temporary pressure bonding temperature, NCF 118 softens and has fluidity. Further, the NCF 118 can thereby flow into the gap between the semiconductor chip 110 and the substrate 100, and reliably fill the gap.

In the main pressure bonding step, the temporarily pressure bonded semiconductor chip 110 is heated and pressurized at the main pressure bonding temperature. The temperature for main crimping is higher than the melting temperature of the bump 116 and the hardening start temperature of the NCF 118. When heated to the temperature for main pressure bonding, the bump 116 is melted and soldered to the opposing substrate electrode 102. Further, the NCF 118 is hardened by the heating in a state of filling the gap between the semiconductor chip 110 and the substrate 100, and thus the semiconductor chip 110 and the substrate 100 are firmly fixed.

In both the temporary pressure bonding step and the main pressure bonding step, it is desirable to uniformly heat the semiconductor chip 110. That is, in the temporary bonding step, the semiconductor chip 110 is required to have a temperature for temporary bonding at both the center and the end thereof. Similarly, in the final bonding step, the semiconductor chip 110 is required to have a temperature for final bonding at both the center and the end. However, since only one heating system is provided in the conventional bonding head 14, it is difficult to make the temperature distribution of the semiconductor chip 110 uniform.

This will be described with reference to fig. 8. Fig. 8 is a schematic diagram showing a structure of a conventional bonding head 14. The bonding head 14 is provided with a base 29, a heat insulating portion 30, a heating unit 31, and an attachment 33 arranged in this order from the upper side. The base 29 is attached to a moving mechanism not shown, and is made of, for example, stainless steel. The heating unit 31 is a portion in which the heat-releasing resistor 36 is built. The heating unit 31 is flat and made of ceramic such as aluminum nitride. A heat-radiation resistor 36 is embedded in the heating unit 31. The heat-releasing resistor 36 is made of, for example, platinum or tungsten, and is electrically connected to an actuator 38 having a power supply. When a current is applied to the heat-releasing resistor 36, the heat-releasing resistor 36 releases heat, thereby heating the entire heating unit 31. The heat insulating section 30 is set so as not to transfer heat of the heating section 31 to the base section 29, and is made of, for example, ceramics such as Adceram (registered trademark).

An attachment 33 is attached to the lower side of the heating part 31. The attachment 33 includes a rectangular plate-shaped base 33a and an island (island)33b protruding from the bottom surface of the base 33 a. The base 33a has substantially the same outer shape as the heating unit 31. The island 33b is smaller than the base 33a, and has a rectangular shape having substantially the same size as the semiconductor chip 110. The attachment 33 is detachable from the heating unit 31 and is appropriately replaced according to the type of semiconductor chip 110 to be handled. Although not shown in fig. 8, the attachment 33 is formed with a suction hole penetrating in the thickness direction and communicating with a suction pump. Further, a communication passage for communicating the suction hole and the suction pump is formed in the heating unit 31, the heat insulating unit 30, and the base portion 29. The semiconductor chip 110 is held by suction to the attachment 33 through the suction hole.

Further, a cooling passage 42 through which a refrigerant flows is formed above the heating portion 31. The cooling passage 42 communicates with a refrigerant supply source 44, and a valve 46 is provided in the middle of the cooling passage 42. The controller 18 controls the flow rate of the refrigerant by controlling the opening amount of the valve 46. The refrigerant flows through the cooling passage 42, thereby cooling the heater unit 31 and the attachment 33 attached to the heater unit 31.

Here, in the conventional bonding head 14, the heat-releasing resistors 36 may be uniformly distributed in the heating portion 31, so that the temperature distribution of the heating portion 31 may be uniform to some extent. However, the heat absorption rate of the semiconductor chip 110 as a heating target becomes higher as approaching the outer side of the semiconductor chip 110. Therefore, in the conventional technique, even if the temperature distribution of the heating unit 31 is set to be uniform, the temperature of the semiconductor chip 110 to be heated is likely to decrease as it approaches the outside.

Fig. 3 is a graph showing an example of the temperature distribution of the semiconductor chip 110. In fig. 3, the horizontal axis represents a position within the semiconductor chip 110, and the vertical axis represents a temperature of the semiconductor chip 110 (hereinafter simply referred to as "chip temperature"). In fig. 3, "Cc" represents the center position of the semiconductor chip 110, and "Co" represents the end position of the semiconductor chip 110.

In the case where the semiconductor chip 110 is heated by the bonding head 14 having only one heating system, the chip temperature decreases as the end is approached as shown by the solid line in fig. 3. In other words, in the conventional bonding head 14, the temperature distribution of the semiconductor chip 110 is likely to be uneven. In the case where the temperature distribution of the semiconductor chip 110 is not uniform as described above, the molten state of the bump 116 or the softened or hardened state of the NCF 118 varies depending on the portion, and thus, problems such as poor bonding of the semiconductor chip 110 or non-uniformity in the amount of gap between the semiconductor chip 110 and the substrate 100 (or another semiconductor chip 110) occur.

Therefore, in the present specification, in order to make the distribution of the chip temperature uniform, the heating unit 31 is divided into a plurality of heating zones in the horizontal direction, and the heating zones are electrically connected to different drivers. This will be described with reference to fig. 4 and 5.

Fig. 4 is a schematic diagram showing the structure of the bonding head 14 mounted on the manufacturing apparatus 10. Fig. 5 is a schematic plan view of the heating unit 31 of the bonding head 14. The bonding head 14 is provided with a base 29, a heat insulating part 30, a heating part 31, and an attachment 33, which are arranged in this order from the top, as in the conventional bonding head 14. The base 29, the heat insulating part 30, and the attachment 33 have substantially the same structure as the conventional bonding head 14.

On the other hand, the heating unit 31 of the present example is different from the conventional art in that it is divided into the first heating zone 32a and the second heating zone 32 b. Specifically, the heating unit 31 of the present embodiment is divided into a substantially rectangular first heating zone 32a and a square ring-shaped second heating zone 32b surrounding the outer periphery of the first heating zone 32 a. The first heating areas 32a are embedded with first heat-producing resistors 36a, and the second heating areas 32b are embedded with second heat-producing resistors 36 b. Further, a first temperature sensor 34a for detecting the temperature of the first heating zone 32a is attached to the first heating zone 32a, and a second temperature sensor 34b for detecting the temperature of the second heating zone 32b is attached to the second heating zone 32 b.

Here, the temperature sensor 34a and the temperature sensor 34b corresponding to one heating zone may be provided at positions distant from the boundary with another adjacent heating zone. For example, the first temperature sensor 34a may be attached near the center of the first heating zone 32a, and the second temperature sensor 34b may be attached near the outer end of the second heating zone 32 b. With this configuration, the temperature sensors 34a and 34b are less susceptible to the temperature of the other adjacent heating zone.

The first heat-releasing resistor 36a and the second heat-releasing resistor 36b are energized by the first actuator 38a and the second actuator 38b, respectively. The first driver 38a has a power supply circuit for applying a desired current to the first heat-releasing resistor 36 a. The first driver 38a receives a temperature detected by the first temperature sensor 34a (hereinafter referred to as "first zone detected temperature Ta 1") and a first zone target temperature Ta1 stored in the controller 18. The first driver 38a controls the current value applied to the first heat-releasing resistor 36a based on the difference between the first zone detected temperature Ta1 and the first zone target temperature Ta 1.

The second driver 38b has a power supply circuit for applying a desired current to the second heat-releasing resistor 36 b. The second driver 38b receives a temperature detected by the second temperature sensor 34b (hereinafter referred to as "second zone detected temperature Ta 2"), and a second zone target temperature Ta2 stored in the controller 18. The second driver 38b controls the current value applied to the second heat-releasing resistor 36b based on the difference between the second zone detected temperature Ta2 and the second zone target temperature Ta 2.

In fig. 4 and 5, a gap is shown between the two heating zones 32a and 32b in order to clarify the boundary between the two heating zones 32a and 32 b. However, there may be practically no gap between the two heating zones 32a, 32 b. The first heating zones 32a and the second heating zones 32b do not need to be mechanically separated, and the first heating zones 32a in which the first heat-producing resistors 36a are embedded and the second heating zones 32b in which the second heat-producing resistors 36b are embedded may be connected seamlessly. That is, the heating unit 31 may be made of a single ceramic. By configuring the heating unit 31 with a single ceramic in this manner, flatness of the heating unit 31 can be easily ensured, and the semiconductor chip 110 can be more uniformly pressurized.

In this example, not only the plurality of heating systems but also the plurality of cooling systems are provided. That is, a first cooling passage 42a and a second cooling passage 42b provided corresponding to the first heating zone 32a and the second heating zone 32b, respectively, are provided above the heating unit 31. The cooling passages 42a and 42b communicate with a refrigerant supply source 44, and the flow rate of the refrigerant flowing through the cooling passages 42a and 42b can be changed by controlling the opening/closing amounts of valves 46a and 46b provided in the cooling passages 42a and 42 b. The opening and closing amounts of the valves 46a and 46b are controlled by the controller 18. In other words, the controller 18 can control the flow of the refrigerant in each of the two cooling passages 42a and 42b independently of each other. By flowing the refrigerant through the cooling passages 42a and 42b, the corresponding heating zones 32a and 32b are cooled.

As is apparent from the description so far, in the present example, the heating temperatures of the first heating zone 32a and the second heating zone 32b can be independently controlled. The controller 18 controls the temperatures of the two heating areas 32a, 32b so that the temperature distribution of the semiconductor chip 110 becomes uniform when the semiconductor chip 110 is bonded. Specifically, the controller 18 inputs the zone target temperature Ta1 and the zone target temperature Ta2, which can make the temperature distribution of the semiconductor chip 110 uniform, to the first driver 38a and the second driver 38 b. More specifically, the controller 18 inputs a value higher than the target zone temperature Ta1 of the inner first heating zone 32a to the second driver 38b as the target zone temperature Ta2 of the outer second heating zone 32 b.

Fig. 6 is a graph showing changes with time of the zone detection temperature Ta1 and the zone detection temperature Ta2 when the semiconductor chip 110 is bonded. In fig. 6, the horizontal axis represents time, and the vertical axis represents the area detection temperature. In fig. 6, the thick line indicates the first-region detection temperature Ta1, and the thin line indicates the second-region detection temperature Ta 2. As shown in fig. 6, in this example, the first zone detected temperature Ta1 becomes the first zone target temperature Ta1, and the second zone detected temperature Ta2 is higher than the first zone target temperature Ta 1. The driving of the two heaters 36a and 36b is controlled so as to become the second zone target temperature Ta 2.

Further, when only the electrical conduction control of the heat-releasing resistors 36a and 36b is performed, it may be difficult to perform delicate temperature control. In this case, the refrigerant may be supplied to the cooling passages 42a and 42b while the heat-releasing resistors 36a and 36b are energized. For example, when the rate of temperature increase of the second region detection temperature Ta2 is higher than the target value, the controller 18 may increase the opening degree of the valve 46b provided in the second cooling passage 42b to temporarily increase the flow rate of the refrigerant flowing through the second cooling passage 42 b. By simultaneously controlling the flow rate of the refrigerant and the energization of the heat-releasing resistors 36a and 36b in this manner, the respective heating zones 32a and 32b can be heated with higher accuracy.

In short, the temperature in the vicinity of the end portion of the semiconductor chip 110 having a high heat absorption rate can be increased similarly to the vicinity of the center portion by the second heating region 32b located on the outer side being at a higher temperature than the first heating region 32a located on the inner side. As a result, according to this example, the temperature distribution of the semiconductor chip 110 can be made nearly uniform.

The controller 18 stores in advance the first region target temperature Ta1 and the second region target temperature Ta2 in a memory in order to heat the semiconductor chips 110 uniformly. The zone target temperatures Ta1 and Ta2 are prepared for each step. That is, the controller 18 stores the zone target temperature Ta1 and the zone target temperature Ta2 used in the temporary crimping step, and the zone target temperature Ta1 and the zone target temperature Ta2 used in the actual crimping step.

In addition, since the distribution of the heat absorption rate of the semiconductor chip 110 is different depending on the type of the semiconductor chip 110, the zone target temperature T1 and the zone target temperature T2, which can uniformly heat the semiconductor chip 110, are different depending on the type of the semiconductor chip 110. Therefore, the zone target temperatures Ta1 and Ta2 are also prepared for each kind of the semiconductor chip 110 to be operated.

The controller 18 may execute a target acquisition process for acquiring the zone target temperature before manufacturing the semiconductor device in order to acquire the zone target temperature Ta1 and the zone target temperature Ta 2. Fig. 7 is a flowchart showing the flow of the target acquisition process.

In the target acquisition process, first, an inner temperature sensor and an outer temperature sensor are mounted on the sample chip (S10). Here, the sample chip is the same kind of semiconductor chip 110 as the semiconductor chip 110 used in manufacturing an actual semiconductor device. The inner temperature sensor is mounted near the center of the sample chip, and the outer temperature sensor is mounted near the end of the sample chip. Hereinafter, the detected temperature of the inner temperature sensor is referred to as "first chip detected temperature Tc 1", and the detected temperature of the outer temperature sensor is referred to as "second chip detected temperature Tc 2".

The controller 18 drives the bonding head 14 to mount the sample chip on the substrate 100 (S12). When the sample chip is mounted on the substrate 100, the controller 18 then heats the heat-releasing resistors 36a and 36b until the first zone detection temperature Ta1 reaches the first temporary target temperature Tt1 and the second zone detection temperature Ta2 reaches the predetermined second temporary target temperature Tt2 (S14). Here, the first temporary target temperature Tt1 and the second temporary target temperature Tt2 may be the same value or different values.

When Ta1 becomes Tt1 and Ta2 becomes Tt2, the controller 18 acquires the first chip detection temperature Tc1 and the second chip detection temperature Tc2 at the time points (S16). The controller 18 calculates differences between the acquired chip detected temperature Tc1 and the chip detected temperature Tc2 and the target temperature Tdef of the semiconductor chip 110 as a first difference value Δ T1 and a second difference value Δ T2 (S18). Here, when the zone target temperature Ta1 and the zone target temperature Ta2 used in the temporary pressure bonding step are acquired, the target temperature Tdef is the temporary pressure bonding temperature. When the zone target temperature Ta1 and the zone target temperature Ta2 used in the main pressure welding step are obtained, the target temperature Tdef is the main pressure welding temperature.

Then, the controller 18 compares the absolute value | Δ T1| of the first difference value and the absolute value | Δ T2| of the second difference value with the allowable error Δ def (S20). If the comparison result indicates that | Δ T1| is equal to or smaller than the allowable error Δ def and | Δ T2| is equal to or smaller than the allowable error Δ def (Yes in S20), it is determined that the current temporary target temperature Tt1 and the temporary target temperature Tt2 are appropriate. Therefore, in this case, the controller 18 stores the current first temporary target temperature Tt1 as the first zone target temperature Ta1 and the second temporary target temperature Tt2 as the second zone target temperature Ta2 in the memory (S24).

On the other hand, if the comparison result is that | Δ T1| exceeds the allowable error Δ def or | Δ T2| exceeds the allowable error Δ def (No in S20), the controller 18 corrects the temporary target temperature Tt1 and the temporary target temperature Tt2 (S22). The method of correcting the temporary target temperature Tt1 and the temporary target temperature Tt2 is not particularly limited as long as the difference value Δ T1 and the difference value Δ T2 can be reduced. Therefore, for example, a value obtained by subtracting the difference value Δ T1, the difference value Δ T2 and multiplying the predetermined coefficient K1 and the coefficient K2 from the current temporary target temperature Tt1 and the temporary target temperature Tt2 may be calculated as the corrected temporary target temperature Tt1 and the temporary target temperature Tt 2. That is, Tt 1-Tt 1- Δ T1-K1 and Tt 2-Tt 2- Δ T2-K2 may be used.

If the temporary target temperature Tt1 and the temporary target temperature Tt2 can be calculated, the controller 18 repeats the processing of steps S14 to S22 again. Finally, | Δ T1| ≦ Δ def and | Δ T2| ≦ Δ def, and if step S24 is executed, the process of acquiring the target area temperature ends.

The configuration described above is an example, and the heating unit 31 may be modified in other configurations as long as it is divided into a first heating zone and a second heating zone surrounding the first heating zone in the horizontal direction, and the first heating zone and the second heating zone can be independently temperature-controlled. For example, although the heating unit 31 is divided into the first heating zone 32a and the second heating zone 32b surrounding the first heating zone, the heating unit 31 may be divided into a larger number of zones. For example, the heating unit 31 may be divided into a substantially rectangular first heating area, a square second heating area surrounding the first heating area, and a square third heating area surrounding the second heating area. In the above description, the two heating zones are independently temperature-controlled so that the temperature distribution of the heating target becomes uniform. However, the temperature distribution of the heating target may be appropriately changed depending on the type of the joining or the type of the heating target. For example, the controller may control the temperatures of the first heating zone and the second heating zone so that the peripheral portion of the heating target becomes higher in temperature than the central portion.

Description of the symbols

10: manufacturing apparatus

12: pickup unit

14: joint head

16: platform

18: controller

20: push up pin

22: pick-up head

26: first camera

29: base part

30: heat insulation part

31: heating part

32 a: first heating zone

32 b: second heating zone

33: accessories

33 a: base body

33 b: island part

34: temperature sensor

36: heat-releasing resistor

38: driver

42: cooling passage

44: refrigerant supply source

46: valve with a valve body

100: substrate

102: substrate electrode

110: semiconductor chip

116: bump

120: cutting belt