阅读说明：本技术 阀模块和包括所述阀模块的衬底处理装置 (Valve module and substrate processing apparatus including the same ) 是由 金像鈱 李在民 于 2020-01-03 设计创作，主要内容包括：本发明涉及一种阀模块和包括所述阀模块的衬底处理装置,且更具体地说,涉及一种安装于由等离子体活化的气体流经的流动路径中的阀模块和包括所述阀模块的衬底处理装置。揭露了一种安装于衬底处理装置中的阀模块(400),所述衬底处理装置包括：处理腔室(100),形成衬底处理空间(S)；以及流动路径部分(300),耦合到处理腔室(100)且形成由等离子体活化的气体流经的流动路径(302),其中阀模块(400)包括：开/闭板(410),经安装其以能够经由设置在流动路径部分(300)的一侧上的开口狭缝(301)在流动路径(300)上来回移动,从而打开及关闭流动路径(302)；第一驱动部分(420),驱动开/闭板(410)的向前和向后移动；开/闭板保护部分(430),移动到开/闭板(410)与流动路径(302)之间的空间中,以在开/闭板(410)向后移动且保持流动路径(302)打开时防止开/闭板(410)被活化气体损坏；以及第二驱动部分(440),驱动开/闭板保护部分(430)的移动。(The present invention relates to a valve module and a substrate processing apparatus including the same, and more particularly, to a valve module installed in a flow path through which a gas activated by plasma flows and a substrate processing apparatus including the same. A valve module (400) mounted in a substrate processing apparatus is disclosed, the substrate processing apparatus comprising: a processing chamber (100) forming a substrate processing space (S); and a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) through which a plasma activated gas flows, wherein the valve module (400) includes: an opening/closing plate (410) installed to be capable of moving back and forth on the flow path (300) via an opening slit (301) provided on one side of the flow path portion (300) to open and close the flow path (302); a first driving part (420) driving forward and backward movement of the opening/closing plate (410); an opening/closing plate protecting portion (430) moved into a space between the opening/closing plate (410) and the flow path (302) to prevent the opening/closing plate (410) from being damaged by the activated gas when the opening/closing plate (410) is moved backward and keeps the flow path (302) open; and a second driving part (440) driving the movement of the opening/closing plate protecting part (430).)

1. A valve module (400) provided to a substrate processing apparatus, the substrate processing apparatus comprising: a process chamber (100) defining a substrate processing space (S); and a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) along which a plasma activated gas flows, the valve module (400) comprising:

a shutoff plate (410) provided in the flow path (302) to move forward or backward on the flow path (302) via an open slit (301) formed at one side of the flow path portion (300) so as to open or close the flow path (302);

a first driver (420) driving forward or backward movement of the intercepting plate (410);

a shutoff plate protecting portion (430) moved into a gap between the shutoff plate (410) and the flow path (302) to prevent the shutoff plate (410) from being damaged by the activating gas when the shutoff plate (410) is moved backward to open the flow path (302); and

a second driver (440) driving movement of the closure plate protecting portion (430).

2. The valve module (400) provided to a substrate processing apparatus according to claim 1, wherein the flow path part (300) is provided with a valve (303), the valve (303) is in close contact with the shutoff plate (410) after the forward movement of the shutoff plate (410), and the shutoff plate (410) includes a sealing member (413) in close contact with the valve (303) to ensure sealing of the valve (303).

3. The valve module (400) provided to a substrate processing apparatus according to claim 1, wherein the shutoff plate protecting portion (430) comprises a blocking piece (432), the blocking piece (432) being moved into a gap between the shutoff plate (410) and the opening slit (301) to block the opening slit (301) after the rearward movement of the shutoff plate (410).

4. The valve module (400) provided to a substrate processing apparatus according to claim 3, wherein the blocking sheet (432) has a hollow ring shape around a circumference of the flow path (302).

5. The valve module (400) provided to a substrate processing apparatus according to claim 3, wherein a gap is formed between said blocking sheet (432) and said opening slit (301).

6. The valve module (400) provided to a substrate processing apparatus according to any of claims 1 to 5, further comprising:

a valve housing (450) in which the closure plate (410) and the first actuator (420) are disposed.

7. The valve module (400) provided to the substrate processing apparatus according to claim 6, further comprising:

an inert gas feeder feeding an inert gas through the valve housing (450) to prevent the activated gas from entering a space in which the shut-off plate (410) is disposed when the shut-off plate (410) is moved backward to open the flow path (302).

8. The valve module (400) provided to a substrate processing apparatus according to any one of claims 3 to 5, wherein the blocking piece (432) is moved in a first direction perpendicular to a plate surface of the shutoff plate (410) in association with forward or backward movement of the shutoff plate (410) so as to prevent interference with the shutoff plate (410).

9. The valve module (400) provided to a substrate processing apparatus according to any one of claims 1 to 5, wherein the flow path portion (300) is disposed between the processing chamber (100) and a remote plasma generator (200) that generates a remote plasma.

10. The valve module (400) provided to a substrate processing apparatus according to claim 9, wherein a cleaning gas activated in said remote plasma generator (200) is fed to said processing chamber (100) via said flow path portion (300) to clean said processing chamber (100).

11. The valve module (400) provided to a substrate processing apparatus according to any one of claims 1 to 5, wherein the flow path portion (300) is provided between the process chamber (100) and an exhaust pump (800) for exhausting gas from the process chamber (100).

12. A substrate processing apparatus, comprising:

a process chamber (100) defining a substrate processing space (S);

a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) along which a plasma activated gas flows; and

the valve module (400) of claim 9, disposed in the flow path portion (300).

13. The substrate processing apparatus of claim 12, further comprising:

a cleaning gas feed line (210) along which the cleaning gas activated in the remote plasma generator (200) is fed to the remote plasma generator (200) to clean the processing chamber (100).

14. The substrate processing apparatus of claim 12, further comprising:

a cooling unit (900) cooling at least one of the flow path portion (300) and the valve module (400).

Technical Field

The present invention relates to a valve module and a substrate processing apparatus including the same, and more particularly, to a valve module disposed in a flow path through which a gas activated by plasma flows and a substrate processing apparatus including the same.

Background

In an apparatus for substrate processing such as Chemical Vapor Deposition (CVD), process gases having various compositions are fed to a process chamber to deposit thin films such as insulating films and conductive films on substrates.

Thus, the thin film is deposited on the substrate by a chemical reaction within the processing chamber. Here, the byproducts may adhere to the inner walls of the process chamber or to the surface of the susceptor.

As the process is repeated in the process chamber, by-products are continuously accumulated, and sometimes the by-products are separated from the process chamber to form particles, which float in the inner space of the process chamber. Since such floating particles make it difficult to achieve good substrate processing, it is necessary to remove by-products by periodically cleaning the processing chamber.

The process of cleaning the processing chamber may be performed by an in-situ process in which the cleaning gas is fed to the processing chamber to decompose the byproducts attached to the processing chamber by activating the cleaning gas inside the processing chamber or by a remote plasma cleaning process in which the cleaning gas is activated by a remote plasma source separate from the processing chamber and then the activated cleaning gas is fed to the processing chamber to decompose the byproducts attached to the processing chamber.

In a remote plasma cleaning process, cleaning gas activated by a remote plasma is fed to the process chamber via a conduit provided with a valve to block or allow the flow of the cleaning gas in the conduit.

However, when the valve opens the duct, components of the valve (e.g., an O-ring in close contact with the shutoff plate) may be damaged by the activated cleaning gas flowing along the duct, thereby causing leakage of the cleaning gas due to deterioration of the sealing of the shutoff plate, thereby posing a problem of frequent replacement of the damaged components to prevent leakage of the cleaning gas.

Therefore, there may be problems in that it is difficult to perform good substrate processing, the operating cost of the substrate processing apparatus increases, and the productivity of the substrate processing apparatus decreases.

Since such problems may occur not only in the valve provided to the remote plasma source but also in the valve disposed between the process chamber and the exhaust pump, a valve structure that can solve such problems is required.

Disclosure of Invention

[ problem ] to provide a method for producing a semiconductor device

An object of the present invention is to provide a valve module that can prevent a valve provided to a flow path along which a gas activated by plasma flows from being damaged by an activated gas, and a substrate processing apparatus including the same.

In particular, the present invention is directed to a valve module that can prevent leakage of an activated gas due to damage of a sealing member (O-ring) provided to a shutoff plate adapted to open or close a flow path by the activated gas, and a substrate processing apparatus including the same.

[ technical solution ] A method for producing a semiconductor device

According to one aspect of the present invention, there is provided a valve module (400) provided to a substrate processing apparatus, the substrate processing apparatus comprising: a process chamber (100) defining a substrate processing space (S); and a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) along which a plasma activated gas flows, the valve module (400) comprising: a shutoff plate (410) provided in the flow path (302) to move forward or backward on the flow path (302) via an open slit (301) formed at one side of the flow path portion (300) to open or close the flow path (302); a first driver (420) driving the forward or backward movement of the intercepting plate (410); a closure plate protecting portion (430) which is moved into a gap between the closure plate (410) and the flow path (302) to prevent the closure plate (410) from being damaged by the activated gas when the closure plate (410) is moved backward to open the flow path (302); and a second driver (440) driving the movement of the closure plate protecting portion (430).

The flow path part (300) may be provided with a valve (303) that is in close contact with the closure plate (410) after the forward movement of the closure plate (410).

The closure plate (410) may include a sealing member (413) that is in intimate contact with the valve (303) to ensure sealing of the valve (303).

The closure plate protecting portion (430) may include a blocking piece (432), the blocking piece (432) moving into a gap between the closure plate (410) and the opening slit (301) to block the opening slit (301) after the backward movement of the closure plate (410).

The blocking tab (432) may have a hollow ring shape around the circumference of the flow path (302).

A gap may be formed between the blocking tab (432) and the open slot (301).

The valve module (400) may further include a valve housing (450) in which the shut-off plate (410) and the first actuator (420) are disposed.

The valve module (400) may further include an inert gas feeder that feeds an inert gas through the valve housing (450) to prevent the activation gas from entering the space in which the shutoff plate (410) is disposed when the shutoff plate (410) is moved rearward to open the flow path (302).

The blocking piece (432) is movable in a first direction perpendicular to a plate surface of the closure plate (410) in association with forward or backward movement of the closure plate (410) to prevent interference with the closure plate (410).

The flow path portion (300) may be disposed between the processing chamber (100) and a remote plasma generator (200) that generates a remote plasma.

The cleaning gas activated in the remote plasma generator (200) may be fed to the process chamber (100) via the flow path portion (300) to clean the process chamber (100).

The flow path portion (300) may be disposed between the process chamber (100) and an exhaust pump (800) for exhausting gas from the process chamber (100).

According to another aspect of the present invention, there is provided a substrate processing apparatus comprising: a process chamber (100) defining a substrate processing space (S); a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) along which a plasma-activated gas flows; and a valve module (400) according to claim 9, arranged in the flow path portion (300).

The substrate processing apparatus may further comprise: a cleaning gas feed line (210), along which cleaning gas activated in the remote plasma generator (200) is fed to the remote plasma generator (200) to clean the processing chamber (100) along the cleaning gas feed line (210).

The substrate processing apparatus may further include a cooling unit (900) that cools at least one of the flow path portion (300) and the valve module (400).

[ advantageous effects ]

According to the present invention, a valve module and a substrate processing apparatus including the same can prevent a valve provided to a flow path along which a gas activated by plasma flows from being damaged by an activated gas.

In particular, the valve module and the substrate processing apparatus including the same according to the present invention can prevent leakage of an activated gas due to damage of a sealing member (O-ring) provided to a shutoff plate adapted to open or close a flow path by the activated gas.

That is, in the valve module and the substrate processing apparatus including the same, the shutoff plate protecting portion is moved into the gap between the shutoff plate and the flow path to prevent the shutoff plate from being directly exposed to the activated gas flowing along the flow path when the shutoff plate opens the flow path, thereby effectively preventing damage to the sealing member provided to the shutoff plate.

Drawings

Fig. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention.

Fig. 2 is a perspective view of a valve module of the substrate processing apparatus shown in fig. 1.

FIG. 3 is a cross-sectional view of the valve module taken along line A-A in FIG. 2.

Fig. 4A and 4B are views of the valve module depicted in fig. 2 in an operational state of the valve module, respectively depicting a state in which the valve module closes the flow path and a state in which the valve module opens the flow path.

Fig. 5A to 5C are a perspective view of a portion of the valve module depicted in fig. 2, a bottom view thereof, and a cross-sectional view taken along line B-B.

Fig. 6A-6C are a perspective view of a portion of the valve module shown in fig. 2, a bottom view thereof, and a cross-sectional view taken along line C-C, respectively.

Fig. 7A and 7B are views of a valve module according to another embodiment of the present invention in an operational state of the valve module, respectively showing a state in which the valve module closes a flow path and a state in which the valve module opens the flow path.

Fig. 8 is a perspective view of a portion of the valve module depicted in fig. 7A and 7B.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Referring to fig. 1 to 8, a substrate processing apparatus according to the present invention includes: a process chamber (100) defining a substrate processing space (S); a flow path portion (300) coupled to the processing chamber (100) and forming a flow path (302) along which a plasma activated gas flows; and a valve module (400) disposed in the flow path portion (300).

The processing chamber 100 may have various configurations to define an enclosed substrate processing volume S therein. For example, the processing chamber (100) may include a chamber body (110), the chamber body (110) having an opening at an upper side thereof and a top cover (120) detachably coupled to the opening of the chamber body (110) to define a substrate processing space (S) together with the chamber body (110).

The processing chamber (100) is formed with at least one gate (111), and the substrate (10) is introduced into the processing chamber (100) or removed from the processing chamber (100) via the gate (111).

The process chamber (100) may be connected to or provided with a power application system for substrate processing and an exhaust system for pressure control and venting of the substrate processing space (S).

In addition, the process chamber (100) may be provided with a gas injector (600) to inject a process gas into the substrate processing space (S).

The gas injector (600) may have various configurations to inject various process gases into the substrate processing space (S).

For example, the gas injector (600) may include: at least one diffusion plate provided to the upper cover (120) and diffusing the process gas fed through the gas feeding line (500); and a plurality of injection holes through which the diffused process gas is injected toward the substrate processing space (S).

The process chamber (100) may be provided with a substrate support (700), the substrate support (700) supporting a substrate (10) introduced into a substrate processing space (S).

A substrate support (700) is disposed in a processing chamber (100) and may have various configurations to support a substrate (10). For example, as depicted in fig. 1, the substrate support (700) may include: a substrate support plate supporting a substrate (10) on an upper surface thereof, and a substrate support shaft coupled to the substrate support plate and a vertical substrate driving unit (not shown) via a wall of the process chamber (100) to move in a vertical direction.

The substrate support plate may have a shape corresponding to a planar shape of the substrate (10) and a heater (not shown) for heating the substrate may be disposed therein.

The substrate support shaft is coupled to a lower surface of the substrate support plate and may have various configurations to be coupled to a vertical substrate driving unit (not shown) through a wall of the process chamber 100 to move in a vertical direction.

The vertical substrate driving unit (not shown) may have various configurations to move the substrate supporting shaft in the vertical direction, and may include a motor, a linear guide, a screw, a nut, and the like, depending on the configuration of the device.

The flow path portion (300) is coupled to the processing chamber (100) and may have various configurations to form a flow path (302) along which a plasma activated gas flows.

In one embodiment, the flow path portion (300) may be disposed between the processing chamber (100) and a remote plasma generator (200) that generates the plasma, as depicted in fig. 1.

The remote plasma generator (200) is a remote plasma source that generates a remote plasma and may have various configurations.

As depicted in fig. 1, the remote plasma generator (200) is disposed remotely from the processing chamber (100) and may include a remote plasma chamber in which a plasma discharge is generated.

The remote plasma chamber may be formed of an anodized aluminum alloy and may be connected to the processing chamber (100) via a flow path portion (300) described below.

The remote plasma generator (200) may have the same shape as or a similar shape to a typical Remote Plasma Generator (RPG) and a detailed description thereof will be omitted.

The substrate processing apparatus may further comprise a cleaning gas feed line (210), along which cleaning gas for cleaning the processing chamber (100) is fed to the remote plasma generator (200) along the cleaning gas feed line (210).

The cleaning gas introduced into the remote plasma generator (200) via the cleaning gas feed line (210) may be activated (generate radical ions) by the plasma.

An activated cleaning gas may be introduced into the processing chamber (100) via the flow path portion (300) described below to clean the interior of the processing chamber (100).

The cleaning gas may include a fluorine-containing gas such as nitrogen fluoride, fluorocarbon, chlorine fluoride, a mixture of nitrogen fluoride or fluorocarbon, and a mixture of these gases with oxygen, nitrogen, or an inert gas.

For example, the cleaning gas may be NF₃、CIF₃、CF₄、C₂F₆Or C₃F₈Mixed gas with oxygen, NF₃Mixed gases with nitrogen or NF₃And a diluent gas.

The diluent gas may include at least one selected from the group consisting of helium, argon, neon, xenon, and krypton.

In this case, the activated gas (activated species) activated in the remote plasma generator (200) may flow along the flow path portion (300).

When the cleaning gas flows into the remote plasma generator (200), the activating gas (activating substance) flowing along the flow path portion (300) may be fluorine radicals activated by the remote plasma.

That is, the cleaning gas activated in the remote plasma generator (200) along the flow path portion (300) may be fed to the process chamber (100) to clean the process chamber (100).

Although fig. 1 shows the flow path portion (300) as an assembly separate from a gas feed line (500) along which the process gas is fed to the processing chamber (100), it should be understood that the present invention is not limited thereto.

That is, the flow path portion (300) may be directly connected to the gas injector (600) of the process chamber (100) independent of the gas feed line (500) or may be indirectly connected to the gas injector (600) via the gas feed line (500).

In another embodiment, as depicted in fig. 1, the flow path portion 300 may be disposed between the process chamber 100 and an exhaust pump 800 for exhausting gas from the process chamber 100.

In this embodiment, byproducts or activation gases (activation species) activated in the processing chamber (100) may flow through the flow path portion (300).

The valve module (400) may be disposed in the flow path portion (300) and may have various configurations to control the flow of the activated gas (activated species) or byproducts flowing along the flow path (302).

For example, to open or close the flow path (302) of the flow path portion (300), the valve module (400) may include: a shutoff plate (410) provided to move forward or backward on the flow path (302) via an open slit (301) formed at one side of the flow path portion (300); and a first driver (420) driving the forward or backward movement of the intercepting plate (410).

The shutoff plate (410) moves forward or backward on the flow path (302), and may be formed of various materials in various shapes so as to open or close the flow path (302). For example, as illustrated in fig. 5A to 5C, the shutoff plate (410) may be a plate formed at one side thereof with a step so as to closely contact the circumference of the flow path (302).

The flow path part (300) may be formed with an opening slit (301), and the cutoff plate (410) moves forward or backward on the flow path (302) through the opening slit (301).

The opening slit (301) is an opening that allows the shutoff plate (410) to move in a forward or backward direction toward the flow path (301) of the shutoff plate (410), and may have various shapes and sizes. Preferably, the open slit (301) is formed to a predetermined width along the circumference of the flow path (302) and has a length that allows at least the cutoff plate (410) to pass therethrough without friction.

Here, the opening slit (301) may form a boundary between the flow Path (PS) on the remote plasma generator (200) side (or on the exhaust pump (800) side) and the flow Path (PC) on the process chamber (100) side.

In addition, the flow path part (300) may be formed with a valve (303), the valve (303) being closely covered by a shutoff plate (410) at a remote plasma generator (200) side (or at an exhaust pump (800) side) or at a process chamber (100) side with reference to the opening slit (301).

The valve (303) may be in close contact with the closure plate (410) after the forward movement of the closure plate (410) (after closing the flow path (302)). Although in the embodiment depicted in fig. 1-8, the valve 303 is formed on the side of the processing chamber 100, it should be understood that the invention is not so limited.

The closure plate (410) may include a sealing member (413) that is in intimate contact with the valve (303) to ensure sealing of the valve (303).

The sealing member (413) may have various configurations to seal the valve (303) via intimate contact with the valve (303). The sealing member (413) may be implemented, for example, by an O-ring member or a protrusion formed in a tight contact area.

Although the sealing member (413) is shown as a protrusion integrally formed with the closure plate (410) along a region closely contacting the closure plate (410) of the valve (303) in the embodiment illustrated in fig. 2 through 8, a separate O-ring member may be provided along the closely contacting region of the closure plate (410) in other embodiments.

In addition, since the cut-off plate (410) is moved forward or backward on the flow path (302), the cut-off plate (410) has a stepped structure at one side thereof such that the sealing member (413) protrudes toward the flow path (302) to facilitate sealing of the valve (303) with the sealing member (413). This structure can minimize damage to the sealing member (310) by minimizing a force applied from the first driver (420) described below to compress the intercepting plate (410) in a forward direction (X-axis direction in the drawing), and can maximize a sealing effect of the intercepting plate (410) against the valve (303) by compressing the intercepting plate (410) in the forward direction.

Since the shutoff plate (410), and in particular the sealing member (413), may be damaged by the activated gas flowing along the flow path (302), it is desirable that the shutoff plate (410), and in particular the sealing member (413), be formed of a material having good durability with respect to the activated gas. In addition, since the shutoff plate (410), and particularly the sealing member (413), is exposed to a high-temperature condition caused by an activated gas and may be adhered to the valve (303), the shutoff plate (410), and particularly the sealing member (413), is preferably formed of a material exhibiting low adhesion at a high temperature.

The first driver (420) is a driving source for driving the forward or backward movement of the intercepting plate (410), and may be implemented by various driving methods, for example, a solenoid valve.

For example, the first driver (420) may include: a moving block (426) coupled to the main rod (422), the main rod (422) being coupled to one end of the intercepting plate (410); a guide rod (424) that extends in a moving direction of the moving block (426) and guides movement of the moving block (426) movably coupled to the guide block; and a moving block driver (421) for driving the movement of the moving block (426).

The main lever (422) may be coupled to the cut-off plate (410) via a coupling part (411) formed at one end of the cut-off plate (410).

The first actuator (420) may further include an actuator frame (428), the shutoff plate (410) and the first actuator (420) being disposed on the actuator frame (428). The drive frame (428) may have a hollow cylindrical structure along which the moving mass (426) moves.

The moving mass driver (421) may be a solenoid module that controls air pressure in the driver frame (428) for movement of the moving mass (426).

The valve module (400) may further include a valve housing (450) in which the shut-off plate (410) and the first actuator (420) are disposed.

The valve housing (450) refers to a housing in which the closure plate (410) and the first actuator (420) are disposed and which may be formed of various materials in various shapes. The valve housing (450) may be coupled to the flow path portion (300) to constitute at least part of the flow path (302) or the opening slit (301).

Since the valve module (400) opens or closes the flow path (302) in which the activation gas flows, it is possible for the shutoff plate (410) to be exposed to the activation gas via the opening slit (301) through which the shutoff plate (410) passes when the valve module (400) opens the flow path (302) (in a state in which the shutoff plate (410) is moved backward).

Accordingly, the valve module (400) may further include an inert gas feeder that feeds an inert gas through the valve housing (450) to prevent the gas (activation substance) activated by the plasma from entering the space in which the shutoff plate (410) is placed when the shutoff plate (410) is moved backward to open the flow path (302).

Since the inert gas feeder feeds the inert gas to the space in which the shutoff plate (410) is placed, the inert gas can prevent the plasma (to be precise, the activation gas) from diffusing toward the shutoff plate (410) via the opening slit (301).

Referring to fig. 4B and 7B, the inert gas feeder may be provided to an inert gas feed line (407), the inert gas feed line (407) being connected to an inert gas inlet port (405) formed at one side of the valve housing (450).

When an inert gas is fed to the space in which the shutoff plate (410) is placed, it is possible to prevent plasma from entering the space for the shutoff plate (410) via the opening slit (301) to some extent. However, since the shutoff plate (410) is directly exposed to the flow path (301) in which the gas (activation substance) activated by the plasma flows via the opening slit (301), there may still be a problem of damaging the sealing member (413) of the shutoff plate (410).

Accordingly, the valve module (400) according to the present invention may have a structure that can prevent the closure plate (410), and particularly, the sealing member (413) of the closure plate (410) from being directly exposed to the activated gas.

In particular, the valve module (400) according to the invention may further comprise: a shutoff plate protecting portion (430) formed to move to a gap between the shutoff plate (410) and the flow path (302) to prevent the shutoff plate (410) from being damaged by the plasma-activated gas (activating substance) when the shutoff plate (410) is moved backward to open the flow path (302); and a second driver (440) driving the movement of the closure plate protecting portion (430).

The shutoff plate protecting portion (430) may be configured to move to a gap between the shutoff plate (410) and the flow path (302) to prevent the shutoff plate (410) from being damaged by plasma when the shutoff plate (410) is moved backward to open the flow path (302), and may have various shapes and sizes. In addition, similar to the shutoff plate (410), the shutoff plate protecting portion (430) may be formed of a material having good durability with respect to the activated gas.

In particular, the closure plate protecting portion (430) may include a blocking tab (432), the blocking tab (432) moving into a gap between the closure plate (410) and the opening slit (301) to block the opening slit (301) after the closure plate (410) is moved backward.

The blocking piece (432) may have any shape as long as the blocking piece (432) is movable into a gap between the cut-off plate (410) and the opening slit (301) to block the opening slit (301).

In one embodiment, the blocking sheet (432) may have a shape corresponding to the length and width of the open slit (301), as depicted in fig. 6A-6C.

In another embodiment, the blocking tab (432) may have a hollow ring shape around the circumference of the flow path (302), as depicted in fig. 7A-8.

In the embodiment illustrated in fig. 7A to 8, the blocking sheet (432) may surround the entire circumference of the flow path (302) while blocking the opening slit (301).

When the blocking piece (432) is configured to block the region corresponding to the opening slit (301) instead of surrounding the entire circumference of the flow path (302), as illustrated in fig. 6A to 6C, it is possible to simplify the configuration of the intercepting plate protecting portion (430) by omitting unnecessary portions and minimizing problems caused by the blocking piece (432) being burned under high temperature conditions.

When the blocking piece (432) moves into the gap between the cutoff plate (410) and the opening slit (301) which are moved backward, a gap (D) may be generated between the blocking piece (432) and the opening slit (301), as illustrated in fig. 4B.

Since a gap is generated between the blocking piece 432 and the opening slit 301, the blocking piece 432 and the opening slit 301 can move without friction.

As illustrated in fig. 4B, the inert gas fed from the inert gas feeder flows to the flow path (302) through the gap (D), thereby preventing the plasma (activated species) from diffusing toward the shutoff plate (410). Here, since the gap (D) is much smaller than the opening slit (301), the inert gas can sufficiently prevent the plasma from penetrating to the shutoff plate (410).

Referring to fig. 4A, 4B, 7A, and 7B, the blocking piece (432) is movable in a first direction (in a Y-axis direction in the drawing) perpendicular to a plate surface (X-Y plane in the drawing) of the cut-off plate (410) in association with forward or backward movement (movement in the X-axis direction in the drawing) of the cut-off plate (410), thereby preventing interference with the cut-off plate (410).

The second driver (440) drives the movement of the closure plate protecting portion (430) and various driving methods may be employed.

The second driver (440) may be coupled to the closure plate protecting portion (430) via a coupling portion (431) formed at a distal end of the closure plate protecting portion (430).

Additionally, the valve module (400) may include a valve controller (460), the valve controller (460) controlling operation of the first driver (420) and the second driver (440) to control opening/closing of the flow path (302).

The substrate processing apparatus according to the present invention may further include a cooling unit (900) cooling at least one of the flow path portion (300) and the valve module (400).

The cooling unit (900) may have various configurations to cool at least one of the flow path portion (300) and the valve module (400). For example, as depicted in fig. 2, 4A, 4B, 7A, and 7B, the cooling unit (900) may include a cooling flow path formed in the flow path portion (300) or in the valve housing (450) to allow coolant to flow therethrough.

Since the cooling unit (900) cools at least one of the flow path portion (300) and the valve module (400), it is possible to prevent damage to the sealing member via adhesion of the sealing member (413) under high temperature conditions.

Next, with reference to fig. 4A, 4B, 7A, and 7B, a process of opening or closing a valve (303) in the substrate processing apparatus will be described.

Fig. 4A and 7A show the forward movement (in the X-axis direction in the drawing) of the shutoff plate (410) to close the flow path (302) through the opening slit (301).

Here, the forward movement of the cutoff plate (410) may mean a movement of the cutoff plate (410) in a direction in which the cutoff plate (410) approaches the flow path (302).

Therefore, since the flow path (302) is closed by the shutoff plate (410), the activated gas cannot flow along the flow path (302).

The closure plate protecting portion (430) is placed in a space that does not interfere with the closure plate (410). Although fig. 4A and 7B illustrate the shutoff plate protecting portion (430) being placed in a space on the remote plasma generator (200) side (or the exhaust pump (800) side) with reference to the shutoff plate (410), it should be understood that the shutoff plate protecting portion (430) is placed in a space on the process chamber (100) side with reference to the shutoff plate (410).

When it is desired to supply a remote plasma (supply an activation gas) to the processing chamber (100) or to exhaust from the processing chamber (100), the shutoff plate (410) may be moved backward (in the X-axis direction of the drawing) to open the flow path (302).

Fig. 4B and 7B illustrate the backward movement (in the X-axis direction in the drawings) of the shutoff plate (410) to open the flow path (302). Here, the process chamber (100) may be cleaned by activated cleaning gas fed to the process chamber (100) along the flow path (302).

Here, the backward movement of the cutoff plate (410) may mean a movement of the cutoff plate (410) in a direction in which the cutoff plate (410) moves away from the flow path (302).

Thus, as the closure plate (410) is removed from the flow path (302), the flow path (302) opens to allow the activated gas to flow along the flow path (302).

In association with the rearward movement of the closure plate (410), the closure plate protecting portion (430) enters a gap between the closure plate (410) and the opening slit (301) to block the opening slit (301).

Fig. 4B and 7B illustrate that the shutoff plate protecting portion (430) moves from a space on the remote plasma generator (200) side (or on the exhaust pump (800) side) with reference to the shutoff plate (410) to the opening slit (301) side to block the opening slit (301). Although not shown in the drawings, it is understood that the shutoff plate protecting portion (430) can be moved from a space on the side of the process chamber (100) with reference to the shutoff plate (410) to the opening slit (301) on the upper side of the process chamber (100) to block the opening slit (301).

When it is desired to block the supply of the remote plasma (supply of the activation gas) to the process chamber (100) (e.g., after the cleaning of the process chamber (100) is completed) or to exhaust from the process chamber (100), the shutoff plate protecting portion (430) is returned to the initial position of fig. 4A or 7A so that the shutoff plate (410) can be moved forward toward the flow path (302) to close the flow path (302).

Although some embodiments have been described herein, it should be understood that these embodiments are provided for illustration purposes only and are not to be construed as limiting the invention in any way. Accordingly, the scope of the invention should be defined by the appended claims and equivalents thereof.