阅读说明：本技术 防伪结构、防伪结构的制备方法和芯片 (Anti-counterfeiting structure, preparation method of anti-counterfeiting structure and chip ) 是由 史丽娜 尚潇 李龙杰 陈生琼 谢常青 李泠 于 2021-09-08 设计创作，主要内容包括：本申请实施例公开了一种防伪结构、防伪结构的制备方法和芯片,其中防伪结构包括：基底层；多个凸起结构,形成于所述基底层上,其中,用于制备所述凸起结构的材料的折射率大于1.4。当入射光照射在防伪结构上时,入射光会与多个凸起结构产生米氏共振现象,使得防伪结构的凸起结构上不同角度反射的光线不同,进而使得经由不同的角度看向防伪结构时会呈现不同的颜色,基于此即可实现防伪作用,本申请实施例提供的防伪结构基于结构色进行显色,无需依赖于颜料,分辨率高,使得防伪结构难以被仿制,且本申请实施例提供的防伪结构无需依赖于化学染料,能够降低对环境的污染。(The embodiment of the application discloses an anti-counterfeiting structure, a preparation method of the anti-counterfeiting structure and a chip, wherein the anti-counterfeiting structure comprises: a base layer; a plurality of raised structures formed on the base layer, wherein a refractive index of a material used to prepare the raised structures is greater than 1.4. When incident light shines on anti-fake structure, the incident light can produce the mie resonance phenomenon with a plurality of protruding structures, make the light of different angle reflections on anti-fake structure different, and then can present different colours when making the angle of seeing to anti-fake structure via difference, can realize anti-fake effect based on this, the anti-fake structure that this application embodiment provided carries out the colour development based on structural color, need not to rely on pigment, the resolution ratio is high, make anti-fake structure be difficult to by the imitation, and the anti-fake structure that this application embodiment provided need not to rely on chemical dye, can reduce the pollution to the environment.)

1. A security feature, comprising:

a base layer;

a plurality of raised structures formed on the base layer, wherein a refractive index of a material used to prepare the raised structures is greater than 1.4.

2. The security structure of claim 1 wherein the substrate layer is the same material as used to make the raised structures.

3. The security structure of claim 1 wherein the raised structures are made from a material comprising at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

4. The security structure of claim 1,

the cross section of the convex structure along the height direction is oval;

the height of the protruding structure is 140 nm to 240 nm.

5. The security structure of claim 4,

the diameter of the minor axis of the ellipse is 80 to 240 nanometers;

the diameter of the long axis of the ellipse is 80 to 240 nanometers, and the value of the diameter of the long axis is larger than that of the short axis.

6. The security structure of claim 1,

the plurality of protruding structures are arranged on the substrate layer in a rectangular array;

the X-axis arrangement period and the Y-axis arrangement period of the rectangular array arrangement are the same, and the values of the X-axis arrangement period and the Y-axis arrangement period are 290-310 nanometers.

7. The security structure of any one of claims 1 to 5, further comprising:

the metal layer covers one side of the protruding structure, which is far away from the substrate;

the metal layer has a thickness of 25 to 35 nm.

8. The security structure of claim 7, wherein the metal layer is made of a material comprising at least one of gold, silver, aluminum, and chromium.

9. A method of making a security structure, for use in making a security structure according to any one of claims 1 to 8, the method comprising:

providing a substrate, wherein the refractive index of a material used for preparing the substrate is more than 1.4;

and etching the substrate to form a plurality of protruding structures on the substrate.

10. The security structure of claim 9, wherein the step of etching the substrate to form a plurality of raised structures on the substrate comprises:

arranging a metal mask layer on the substrate;

and etching the substrate through an electron beam lithography process to form a plurality of protruding structures on the substrate.

11. The security structure of claim 9,

the material for preparing the substrate includes at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

12. A method of making a security structure, for use in making a security structure according to any one of claims 1 to 8, the method comprising:

providing a substrate;

forming a thin film structure on the substrate, wherein the refractive index of a material for preparing the thin film structure is greater than 1.4;

and etching the thin film structure to form a plurality of protruding structures on the substrate.

13. The method according to claim 12, wherein the step of etching the thin film structure to form a plurality of protruding structures on the substrate comprises:

arranging a metal mask layer on the thin film structure;

and etching the thin film structure through an electron beam lithography process to form a plurality of protruding structures on the substrate.

14. The production method according to claim 12,

the material for preparing the film structure comprises at least one of PMMA glue, silicon, titanium dioxide, aluminum oxide and hafnium oxide.

15. A chip, comprising:

a security structure as claimed in any one of claims 1 to 8.

Technical Field

The embodiment of the application relates to the technical field of color development, in particular to an anti-counterfeiting structure, a preparation method of the anti-counterfeiting structure and a chip.

Background

Anti-counterfeiting structures are widely used in many goods to discriminate whether products are counterfeit or counterfeit. Most of the prior art is anti-counterfeiting by coating pigments on products and using different colors of the pigments, but the resolution of the traditional pigments is low, so that the prior anti-counterfeiting structure is easy to copy and has poor anti-counterfeiting performance.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art or the related art.

To this end, a first aspect of the invention provides a security feature.

The invention provides a preparation method of an anti-counterfeiting structure in a second aspect.

In a third aspect of the invention, another method of making a security feature is provided.

A fourth aspect of the invention provides a chip.

In view of this, according to a first aspect of embodiments of the present application, there is provided an anti-counterfeiting structure, including:

a base layer;

a plurality of raised structures formed on the base layer, wherein a refractive index of a material used to prepare the raised structures is greater than 1.4.

In a possible embodiment, the material of the substrate layer is the same as the material used for producing the raised structures.

In one possible embodiment, the material for making the protruding structure includes at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

In a possible embodiment, the cross section of the protruding structure in the height direction is elliptical; the height of the protruding structure is 140 nm to 240 nm.

In one possible embodiment, the minor axis of the ellipse is 80 to 240 nanometers in diameter; the diameter of the long axis of the ellipse is 80 to 240 nanometers, and the value of the diameter of the long axis is larger than that of the short axis.

In one possible embodiment, a plurality of the raised structures are arranged in a rectangular array on the base layer; the X-axis arrangement period and the Y-axis arrangement period of the rectangular array arrangement are the same, and the values of the X-axis arrangement period and the Y-axis arrangement period are 290-310 nanometers.

In one possible embodiment, the security structure further comprises:

the metal layer covers one side of the protruding structure, which is far away from the substrate;

the metal layer has a thickness of 25 to 35 nm.

In one possible embodiment, the material from which the metal layer is made comprises at least one of gold, silver, aluminum, and chromium.

According to a second aspect of the embodiments of the present application, a method for manufacturing an anti-counterfeit structure is provided, where the method is used to manufacture the anti-counterfeit structure according to any one of the above technical solutions, and the method includes:

providing a substrate, wherein the refractive index of a material used for preparing the substrate is more than 1.4;

and etching the substrate to form a plurality of protruding structures on the substrate.

In one possible embodiment, the step of etching the substrate to form a plurality of protruding structures on the substrate includes:

arranging a metal mask layer on the substrate;

and etching the substrate through an electron beam lithography process to form a plurality of protruding structures on the substrate.

In one possible embodiment, the substrate is made of a material including at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

According to a third aspect of the embodiments of the present application, there is provided another method for manufacturing a security structure, for manufacturing the security structure according to any one of the above technical solutions, the method including:

providing a substrate;

forming a thin film structure on the substrate, wherein the refractive index of a material for preparing the thin film structure is greater than 1.4;

and etching the thin film structure to form a plurality of protruding structures on the substrate.

In a possible embodiment, the step of etching the thin film structure to form a plurality of protruding structures on the substrate includes:

arranging a metal mask layer on the thin film structure;

and etching the thin film structure through an electron beam lithography process to form a plurality of protruding structures on the substrate.

In one possible embodiment, the material for preparing the thin film structure includes at least one of PMMA paste, silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

According to a fourth aspect of embodiments of the present application, there is provided a chip including:

the anti-counterfeiting structure according to any one of the technical schemes.

Compared with the prior art, the invention at least comprises the following beneficial effects: the anti-counterfeiting structure that this application embodiment provided has included the stratum basale and set up a plurality of protruding structures on the stratum basale, and the refracting index that is used for preparing the material of protruding structure is greater than 1.4, when incident light shines on anti-counterfeiting structure on this basis, the incident light can produce the mie resonance phenomenon with a plurality of protruding structures, make the light of the protruding structural different angle reflection of anti-counterfeiting structure different, and then can present different colours when making to anti-counterfeiting structure via different angles, can realize anti-counterfeiting effect based on this, the anti-counterfeiting structure that this application embodiment provides carries out the colour development based on structural color, need not to rely on pigment, the resolution ratio is high, make anti-counterfeiting structure be difficult to imitated, and the anti-counterfeiting structure that this application embodiment provides need not to rely on chemical dyestuff, can reduce the pollution to the environment.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

FIG. 1 is a schematic block diagram of a security feature according to one embodiment provided herein;

FIG. 2 is a schematic block diagram of another angle of a security feature according to one embodiment provided herein;

FIG. 3 is a schematic block diagram of yet another angle of a security feature according to one embodiment provided herein;

FIG. 4 is a flow chart illustrating exemplary steps of a method for fabricating a security feature according to one embodiment provided herein;

FIG. 5 is a flow chart illustrating exemplary steps in a method of making a security feature according to another embodiment provided herein;

FIG. 6 is a flow chart illustrating exemplary steps in a method for fabricating a security structure according to yet another embodiment provided herein;

fig. 7 is a process flow diagram of a method for fabricating a security structure according to yet another embodiment of the present disclosure.

Wherein, the corresponding relation between the reference signs and the component names is as follows:

100 base layers, 200 raised structures, 300 metal layers.

Detailed Description

In order to better understand the technical solutions described above, the technical solutions of the embodiments of the present application are described in detail below with reference to the drawings and the specific embodiments, and it should be understood that the specific features of the embodiments and the embodiments of the present application are detailed descriptions of the technical solutions of the embodiments of the present application, and are not limitations of the technical solutions of the present application, and the technical features of the embodiments and the embodiments of the present application may be combined with each other without conflict.

As shown in fig. 1 to 3 and fig. 7, according to a first aspect of embodiments of the present application, a security structure is provided, including: a base layer 100; and a plurality of protrusion structures 200 formed on the substrate layer 100, wherein a refractive index of a material used for preparing the protrusion structures 200 is greater than 1.4.

The anti-counterfeiting structure that this application embodiment provided has included stratum basale 100 and a plurality of protruding structures 200 of setting on stratum basale 100, and the refracting index that is used for preparing protruding structure 200's material is greater than 1.4, on this basis when incident light shines on anti-counterfeiting structure, incident light can produce the mie resonance phenomenon with a plurality of protruding structures 200, make the light of different angle reflections on anti-counterfeiting structure's the protruding structure 200 different, and then can present different colours when making to anti-counterfeiting structure via different angles, can realize anti-counterfeiting effect based on this, the anti-counterfeiting structure that this application embodiment provided carries out the colour rendering based on structural color, need not to rely on pigment, the resolution ratio is high, make anti-counterfeiting structure be difficult to imitated, and the anti-counterfeiting structure that this application embodiment provided need not to rely on chemical dye, can reduce the pollution to the environment.

It can be understood that the plurality of protruding structures 200 may be prepared by a photolithography process, such that the anti-counterfeiting structure provided by the embodiment of the present application has high resolution in a sub-wavelength range, is easy to manufacture, is compatible with a conventional semiconductor process, and has environmental friendliness and good durability compared to chemical dyes and pigments.

In some examples, to improve the color development effect of the plurality of raised structures 200, the refractive index of the material used to make the raised structures 200 is greater than 1.7.

In some examples, the material of the substrate layer 100 is the same as the material used to make the raised structures 200.

The material of the substrate layer 100 is the same as the material used for preparing the raised structures 200, on one hand, in the preparation process of the anti-counterfeiting structure, the substrate layer 100 can be etched to directly form a plurality of raised structures 200 on the substrate layer 100, which is beneficial to processing and forming the raised structures 200 and can reduce the generation cost of the anti-counterfeiting structure; on the other hand, the substrate layer 100 and the protruding structure 200 are made of the same material, so that the connection between the substrate layer 100 and the protruding structure 200 is more reliable, the mechanical strength of the anti-counterfeiting structure can be improved, and the service life of the anti-counterfeiting structure can be prolonged.

In some examples, the material from which the raised structures 200 are made includes at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

The material for preparing the protruding structure 200 comprises at least one of silicon, titanium dioxide, aluminum oxide and hafnium oxide, and when light irradiates on the anti-counterfeiting structure, the light and the protruding structure 200 are favorable for Mie resonance, and the light is favorable for coupling among the protruding structures 200, so that different colors can be presented when the anti-counterfeiting structure is seen from different angles, and the anti-counterfeiting effect of the anti-counterfeiting structure is realized.

In some examples, the cross-section of the projection structure 200 in the height direction is elliptical; the height of the protrusion structure 200 is 140 nm to 240 nm.

Protruding structure 200 is oval along direction of height's cross-section, make protruding structure 200 be oval-shaped projection, and through control oval-shaped major axis and minor axis length, can control the mie resonance between incident ray and the protruding structure 200, and then can control anti-counterfeiting structure's color development, do benefit to the incident light that makes anti-counterfeiting structure satisfy in different wavelengths, and adopt oval-shaped projection to arouse the structure color that mie resonance produced, green, high resolution, the color change of image is preliminarily observed to accessible microscope and camera.

The height of the protruding structure 200 is 140 nm to 240 nm, the setting height of the protruding structure 200 is further defined, through the selection of the height, different colors can be presented when the anti-counterfeiting structure is seen from different angles, if the height of the protruding structure 200 is higher than 240 nm, the color development effect of the anti-counterfeiting structure can be reduced, even color can be lost, the processing cost and the production difficulty can be improved, if the height of the protruding structure 200 is lower than 140 nm, then the color development of the anti-counterfeiting structure is possible to present single black, the anti-counterfeiting effect of the anti-counterfeiting structure is possible to be lost, or the anti-counterfeiting effect of the anti-counterfeiting structure can be reduced.

In some examples, the cross section of the protruding structure 200 along the height direction may also be a special-shaped structure to increase the difficulty of imitation of the anti-counterfeiting structure, for example, the cross section of the protruding structure 200 along the height direction may be a Chinese character 'wan'.

In some examples, the minor axis diameter of the ellipse is 80 to 240 nanometers; the diameter of the major axis of the ellipse is 80 to 240 nanometers, and the value of the diameter of the major axis is larger than that of the minor axis.

The diameter of the minor axis and the diameter of the major axis of the ellipse are in the range of 80 nanometers to 240 nanometers, which is convenient for the processing and molding of the convex structure 200; on the other hand, the selection within the range is beneficial to the generation of the Mie resonance phenomenon between the incident light and the convex structure 200, so that the light reflected by the convex structure 200 of the anti-counterfeiting structure at different angles is different, and the anti-counterfeiting structure can be seen in different colors from different angles.

As shown in fig. 3, where the vertical direction in fig. 3 is the Y-axis arrangement direction, the horizontal direction is the X-axis arrangement direction, P1 is the X-axis arrangement period, and P2 is the Y-axis arrangement period, in some examples, the plurality of protrusion structures 200 are arranged in a rectangular array on the substrate layer 100; the X-axis arrangement period and the Y-axis arrangement period of the rectangular array arrangement are the same, and the values of the X-axis arrangement period and the Y-axis arrangement period are 290-310 nanometers.

A plurality of protruding structures 200 are the rectangular array and arrange on base layer 100 for form fabry-perot chamber between the clearance between a plurality of protruding structures 200 and the base layer 100, when light incides anti-fake structure, light can form the mie resonance phenomenon between the clearance between a plurality of protruding structures 200 and base layer 100, light can couple between adjacent protruding structure 200, make the light of different angle reflections different on the protruding structure 200 of anti-fake structure different, and then make and to present different colours when seeing to anti-fake structure via different angles. The arrangement mode of the rectangular array is convenient for the production and processing of the anti-counterfeiting structure on the one hand, and on the other hand, the color development of the anti-counterfeiting color is more regular, so that the anti-counterfeiting identification is facilitated.

The X-axis arrangement period and the Y-axis arrangement period which are arranged in the rectangular array are the same, the values of the X-axis arrangement period and the Y-axis arrangement period are 290-310 nanometers, the color development of the anti-counterfeiting structure can be controlled by controlling the X-axis arrangement period and the Y-axis arrangement period which are arranged in the rectangular array, and the color development of the anti-counterfeiting structure is more regular and is convenient for anti-counterfeiting identification. The value of the X-axis arrangement period and the Y-axis arrangement period is 290-310 nanometers, so that most of incident light with the wavelength can be satisfied, the Mie resonance phenomenon can be generated under the condition that most of the incident light enters the anti-counterfeiting structure, and the anti-counterfeiting identification of the anti-counterfeiting structure is facilitated.

In some examples, the X-axis arrangement period and the Y-axis arrangement period of the rectangular array arrangement are the same, and the values of the X-axis arrangement period and the Y-axis arrangement period are 300 nanometers, in which case the color development effect of the anti-counterfeiting structure is the best.

In some examples, the security structure further comprises: a metal layer 300 covering a side of the bump structure 200 away from the substrate; the metal layer 300 has a thickness of 25 nm to 35 nm.

The security feature further comprises: the metal layer 300 covers one side of the raised structure 200, which is far away from the substrate, on one hand, in the production and preparation process of the anti-counterfeiting structure, the metal layer 300 can be used as a mask for forming the raised structure 200 by etching, so that the anti-counterfeiting structure is more convenient to process and form; on the other hand, the metal layer 300 is provided on the surface of the protrusion structure 200, so that the color development effect of the anti-counterfeit structure can be further improved, and the resolution of the anti-counterfeit structure can be further improved.

The thickness of the metal layer 300 is 25 nm to 35 nm, and through the selection of the thickness, the metal layer 300 does not hinder Mie resonance between light and the protruding structure 200, meanwhile, the strength of the metal layer 300 can be guaranteed, and the anti-counterfeiting effect of the metal layer 300 is guaranteed.

In some examples, the thickness of the metal layer 300 is 30 nm, so that the metal layer 300 does not interfere with the mie resonance between the light and the protruding structure 200, and meanwhile, the strength of the metal layer 300 can be guaranteed to be better, and the anti-counterfeiting effect of the metal layer 300 is guaranteed.

In some examples, the material from which the metal layer 300 is made includes at least one of gold, silver, aluminum, and chromium.

The material for preparing the metal layer 300 includes at least one of gold, silver, aluminum and chromium, the gold, silver, aluminum and chromium have strong stability, the service life of the anti-counterfeiting structure is prolonged, the color development effect of the gold, silver, aluminum and chromium is strong, and the resolution of the anti-counterfeiting structure can be further improved.

As shown in fig. 4, according to a second aspect of the embodiments of the present application, a method for manufacturing a security structure is provided, where the method for manufacturing a security structure according to any of the above technical solutions includes:

step 101: a substrate is provided, the refractive index of the material used to prepare the substrate being greater than 1.4. It is understood that the material for preparing the substrate may include at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide, and when the material for preparing the substrate is silicon, it may be single crystalline silicon or polycrystalline silicon, and the single crystalline silicon has a stronger color developing ability.

Step 102: and etching the substrate to form a plurality of protruding structures on the substrate. The raised structure is formed by etching the substrate, so that on one hand, the raised structure and the substrate are of an integrated structure, and the mechanical strength of the anti-counterfeiting structure can be improved; on the other hand, the preparation process of the convex structure is simplified, and the process difficulty and the process cost are reduced.

The embodiment of the application provides a preparation method of an anti-counterfeiting structure, and a plurality of protruding structures are formed by etching a substrate, so that the anti-counterfeiting structure is convenient to produce and process, the production cost of the anti-counterfeiting structure is reduced, and the mechanical strength of the anti-counterfeiting structure can be improved.

Through the anti-fake structure of preparation method preparation that this application embodiment provided, when incident light shines on anti-fake structure, incident light can produce the mie resonance phenomenon with a plurality of protruding structures, make anti-fake structure's protruding structural light of different angle reflection different, and then make and can present different colours when seeing anti-fake structure via different angles, can realize anti-fake effect based on this, the anti-fake structure that this application embodiment provided carries out the colour development based on structural color, need not to rely on pigment, the resolution ratio is high, make anti-fake structure be difficult to imitate, and the anti-fake structure that this application embodiment provided need not to rely on chemical dye, can reduce the pollution to the environment.

In some examples, etching the substrate to form a plurality of raised structures on the substrate includes: arranging a metal mask layer on a substrate; the substrate is etched by an electron beam lithography process to form a plurality of raised structures on the substrate.

The anti-counterfeiting structure comprises a substrate, a metal mask layer, an electron beam photoetching substrate, a plurality of protruding structures and a metal layer, wherein the metal mask layer is arranged on the substrate, the substrate is subjected to photoetching by the electron beam, the metal mask layer is provided with an etching pattern, part of the substrate is shielded by the etching pattern, the protruding structures can be formed by photoetching, the top of the formed protruding structure is provided with the metal layer, the metal layer is formed on the surface of the protruding structure, the color development effect of the anti-counterfeiting structure can be further improved, and the resolution of the anti-counterfeiting structure can be further improved.

In some examples, the material from which the substrate is made includes at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

The material for preparing the protruding structure comprises at least one of silicon, titanium dioxide, aluminum oxide and hafnium oxide, when the anti-counterfeiting structure is irradiated by light, Mie resonance between the light and the protruding structure is facilitated, coupling between the light and the protruding structures is facilitated, and therefore different colors can be presented when the anti-counterfeiting structure is seen from different angles, and the anti-counterfeiting effect of the anti-counterfeiting structure is achieved.

As shown in fig. 5, according to a third aspect of the embodiments of the present application, another method for manufacturing a security structure is provided, where the method for manufacturing a security structure according to any of the above technical solutions includes:

step 201: a substrate is provided.

Step 202: forming a thin film structure on a substrate, the refractive index of the material used to make the thin film structure being greater than 1.4. It is understood that the material for preparing the thin film structure may include at least one of silicon, titanium dioxide, aluminum oxide, and hafnium oxide, and when the material for preparing the thin film structure is silicon, it may be single crystal silicon or polycrystalline silicon, and the single crystal silicon has a stronger color developing ability.

Step 203: and etching the thin film structure to form a plurality of protruding structures on the substrate. The protruding structure is formed by etching the thin film structure, on one hand, the preparation process of the protruding structure is simplified, the process difficulty and the process cost are reduced, on the other hand, the material of the protruding structure does not need to depend on the material of the substrate structure, the material selection of the substrate can be more diversified, and a plurality of protruding structures can be formed on different substrates.

Through the anti-fake structure of preparation method preparation that this application embodiment provided, when incident light shines on anti-fake structure, incident light can produce the mie resonance phenomenon with a plurality of protruding structures, make anti-fake structure's protruding structural light of different angle reflection different, and then make and can present different colours when seeing anti-fake structure via different angles, can realize anti-fake effect based on this, the anti-fake structure that this application embodiment provided carries out the colour development based on structural color, need not to rely on pigment, the resolution ratio is high, make anti-fake structure be difficult to imitate, and the anti-fake structure that this application embodiment provided need not to rely on chemical dye, can reduce the pollution to the environment.

In some examples, etching the thin film structure to form a plurality of raised structures on the substrate includes: arranging a metal mask layer on the thin film structure; and etching the thin film structure through an electron beam lithography process to form a plurality of protruding structures on the substrate.

Set up metal mask layer at first on the thin film structure, then can form a plurality of protruding structures through electron beam lithography thin film structure, it can be understood that, form on the metal mask layer by the sculpture pattern, shelter from partial basement through this sculpture pattern, carry out the photoetching again and can form a plurality of protruding structures, make the protruding structure top that forms simultaneously possess the metal layer, this metal layer form with protruding structure's surface, can further improve anti-fake structure's chromogenic effect, can further improve anti-fake structure's resolution ratio.

As shown in fig. 6 and 7, in some examples, in the case that the substrate is made of a silicon material, the method for preparing the anti-counterfeiting structure may include:

step 301: arranging a thin film structure on a silicon substrate material, wherein the thin film structure is made of PMMA glue;

step 302: etching the thin film structure by an electron beam lithography process to form a plurality of raised structures on the substrate;

step 303: depositing metallic masking chromium on the raised structures and the substrate by an electron beam evaporation method;

step 304: stripping the metal masking chromium on the substrate by adopting a wet photoresist stripping method;

step 305: and etching the silicon substrate by taking the metal masking chromium arranged on the convex structure as a mask by adopting an inductive coupling plasma etching method.

The arrangement enables the protruding structure to comprise the PMMA glue and the silicon material layer, and formation of the Mie resonance phenomenon is better facilitated.

In some examples, the material from which the thin film structure is made includes at least one of PMMA paste, silicon, titanium dioxide, aluminum oxide, and hafnium oxide.

The material for preparing the protruding structure comprises at least one of silicon, titanium dioxide, aluminum oxide and hafnium oxide, when the anti-counterfeiting structure is irradiated by light, Mie resonance between the light and the protruding structure is facilitated, coupling between the light and the protruding structures is facilitated, and therefore different colors can be presented when the anti-counterfeiting structure is seen from different angles, and the anti-counterfeiting effect of the anti-counterfeiting structure is achieved.

According to a fourth aspect of embodiments of the present application, there is provided a chip including: the anti-counterfeiting structure adopting any one of the technical schemes.

According to the chip provided by the embodiment of the application, the chip comprises the anti-counterfeiting structure of any one of the technical schemes, so that the chip has all the beneficial effects of the anti-counterfeiting structure of any one of the technical schemes.

In some examples, the chip can also include the chip body, and anti-fake structure sets up on the chip body, through the setting of this anti-fake structure, can be in order to distinguish the true and false of chip on the one hand, and on the other hand can trace to the source to the production of chip.

In the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "front", "rear", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or unit must have a specific direction, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.