Prediction method for overprinting abnormity of SE (selective emitter) line and metal grid line of battery piece and electronic equipment

文档序号：1940172 发布日期：2021-12-07 浏览：30次中文

阅读说明：本技术 电池片的se线和金属栅线套印异常的预测方法和电子设备 (Prediction method for overprinting abnormity of SE (selective emitter) line and metal grid line of battery piece and electronic equipment ) 是由孙春生王盼王玉涛于 2021-08-27 设计创作，主要内容包括：本发明涉及一种电池片的SE线和金属栅线套印异常的预测方法和电子设备,其中方法包括：通过采集待测硅片的表面的第一定位点的信息和第二定位点的信息,并根据第一定位点的信息和第二定位点的信息确定待测硅片的位置,然后基于待测硅片的位置检测待测硅片的起始SE线与其他SE线之间的距离并作为距离测试值,若起始SE线与其他SE线之间的距离标准值与其所对应的距离测试值之间差值的绝对值大于相应的阈值,则说明相应区域的SE线的均匀性较差,致使后期印刷的金属栅线和SE线不易对准,从而准确地预测由SE激光台面水平差异导致的电池片的SE线和金属栅线套印异常。(The invention relates to a prediction method for overprint abnormity of an SE line and a metal grid line of a battery piece and electronic equipment, wherein the method comprises the following steps: the method comprises the steps of collecting information of a first positioning point and information of a second positioning point on the surface of a silicon wafer to be detected, determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point, detecting the distance between an initial SE line and other SE lines of the silicon wafer to be detected based on the position of the silicon wafer to be detected and using the distance as a distance test value, and if the absolute value of the difference value between the distance standard value between the initial SE line and the other SE lines and the corresponding distance test value is larger than a corresponding threshold value, indicating that the uniformity of the SE lines in a corresponding area is poor, so that metal grid lines and SE lines printed at the later stage are not easy to align, and accurately predicting the SE lines and metal grid line overprinting abnormity of a battery piece caused by the horizontal difference of a SE laser table board.)

1. A prediction method for overprinting abnormity of an SE line and a metal grid line of a battery piece is applied to a silicon wafer to be tested, a first positioning point, a second positioning point and a plurality of SE lines which are parallel to each other are printed on the surface of the silicon wafer to be tested through laser, and the method comprises the following steps:

collecting information of a first positioning point and information of a second positioning point on the surface of the silicon wafer to be detected;

determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point;

and if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, predicting that overprinting of the SE line and the metal grid line of the battery piece is abnormal.

2. The method as claimed in claim 1, wherein the detecting the distance between the start SE line and other SE lines of the silicon wafer to be tested as the distance test value based on the position of the silicon wafer to be tested comprises:

dividing the silicon wafer to be detected into at least two regions to be detected along the direction intersecting with the SE lines based on the position of the silicon wafer to be detected, dividing the SE lines into different regions to be detected, wherein the number of the SE lines in each region to be detected is equal;

and respectively detecting the distance between the initial SE line and other SE lines in each to-be-detected area and taking the distance as the distance test value.

3. The method according to claim 2, wherein the SE line farthest from the start SE line is taken as a termination SE line, and the detecting the distance between the start SE line and other SE lines in each of the regions to be detected respectively and as the distance test value comprises:

and respectively and sequentially detecting the distance between each SE line in the other SE lines and the starting SE line according to the sequence gradually departing from the starting SE line, and taking the distance as the distance test value until the distance between the ending SE line and the starting SE line is detected.

4. The method of claim 3, wherein said respectively sequentially detecting a distance between each of said other SE lines and said starting SE line as said distance test value comprises:

collecting position information corresponding to the initial position of the initial SE line;

acquiring position information of corresponding SE lines at a position which is sequentially far away from the starting SE line by one line spacing standard value according to a line spacing standard value between two adjacent SE lines, wherein L is X/(N-1), L represents the line spacing standard value, X represents the PT standard value, and N represents the total number of the SE lines;

determining the distance between every two adjacent SE lines according to the position information of any two adjacent SE lines;

and sequentially accumulating the distances between every two adjacent SE lines from the starting SE line to obtain the distances between the starting SE line and the corresponding SE lines in other SE lines, and taking the distances as the distance test values.

5. The method according to claim 4, wherein the silicon wafer to be tested includes a first edge and a second edge which are opposite, the at least two regions to be tested include a first region to be tested near the first edge and a second region to be tested near the second edge, and for the first region to be tested, before the acquiring the position information corresponding to the start position of the start SE line, the method further includes:

collecting third position information of the first edge;

determining the position of the first edge according to the third position information;

and taking the position on the starting SE line in the first area to be detected, which is a preset distance away from the position of the first edge, as the starting position.

6. The method according to claim 4, wherein the silicon wafer to be detected includes a first edge and a second edge which are opposite to each other, the at least two regions to be detected include a first region to be detected near the first edge, a second region to be detected near the second edge, and a third region to be detected between the first region to be detected and the second region to be detected, and for the third region to be detected, before the acquiring the position information corresponding to the start position of the start SE line, the method further includes:

acquiring fourth position information of the third to-be-detected area close to the edge of the first to-be-detected area and fifth position information of the third to-be-detected area close to the edge of the second to-be-detected area;

determining a central line bisecting the third detection area according to the fourth position information and the fifth position information;

and determining the intersection point of the starting SE line and the central line in the third region to be detected as the starting position.

7. The method as claimed in claim 1, wherein the first positioning point and the second positioning point are both located between two adjacent SE lines, and the determining the position of the silicon wafer to be tested according to the information of the first positioning point and the information of the second positioning point includes:

and determining a central point between the first positioning point and the second positioning point according to the information of the first positioning point and the information of the second positioning point, and taking the central point as the position of the silicon wafer to be detected.

8. The method as claimed in claim 1, wherein the surface of the silicon wafer to be tested is further printed with an identification line parallel to the SE line by laser, the method further comprising:

if the absolute value of the difference value between the distance standard value between the starting SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, acquiring the information of the identification line of the silicon wafer to be tested;

and determining an SE laser machine table for carrying out laser printing on the silicon wafer to be tested according to the information of the identification line.

9. The method of claim 1, wherein the method further comprises:

and if the absolute value of the difference value between the distance standard value between the starting SE line and other SE lines and the corresponding distance test value is less than or equal to the corresponding threshold value, predicting that the overprinting of the SE lines and the metal grid lines of the battery piece is normal.

10. An electronic device, wherein the electronic device comprises:

the acquisition assembly is used for acquiring information of a first positioning point and information of a second positioning point on the surface of the silicon wafer to be detected;

a memory storing a computer program; and

a processor operable with the computer program stored on the memory to implement the method of:

determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point;

Technical Field

The invention relates to the technical field of solar cell processes, in particular to a prediction method for overprint abnormity of an SE (selective emitter) line and a metal grid line of a cell and electronic equipment.

Background

Selective Emitter (SE) laser doping is a technique in which a doping element is diffused by a laser line in a local region of the surface of a silicon wafer to form a heavily doped region (emitter), which may be referred to as a selective emitter, for connecting to a metal gate line (electrode). The doping concentration of the surface of the silicon wafer can be reduced by forming the selective emitter on the surface of the silicon wafer, and the open-circuit voltage of the crystalline silicon solar cell is improved. The metal grid lines and the SE lines printed on the surface of the silicon wafer have good overprinting effect, so that the metal grid lines and the selective emitter electrode can form good ohmic contact, and the filling factor of the crystalline silicon solar cell and the efficiency of the crystalline silicon solar cell are improved.

The table top level of the SE laser machine table can affect the graph length value Pitch (PT for short) and the line spacing of a laser graph printed on the surface of a silicon wafer, the PT value perpendicular to the SE line direction can be measured by adopting an automatic measuring program operated in a Micro-VU measuring instrument, and the level difference of the table top of the SE laser machine table perpendicular to the SE line direction and the distortion degree of a laser image can be obtained by comparing the PT value with a standard value. However, the Micro-VU measuring instrument cannot measure the PT value parallel to the SE line direction, and cannot know the level difference of the SE laser table top parallel to the SE line direction and the laser pattern distortion degree, which makes it difficult to ensure a good overprinting effect between the metal grid lines and the SE lines during printing.

Disclosure of Invention

Based on the above, the invention provides a prediction method for the overprinting abnormity of the SE lines and the metal grid lines of the battery piece and electronic equipment, which can predict the horizontal difference condition of the table top of the SE laser machine table parallel to the SE line direction and the SE line direction perpendicular to the SE line direction and the distortion degree of a laser pattern, and ensure that the metal grid lines and the SE lines have good overprinting effect during printing.

In a first aspect, a prediction method for overprint anomaly of an SE line and a metal gate line of a battery piece is provided, the prediction method is applied to a silicon wafer to be tested, and a first positioning point, a second positioning point and a plurality of SE lines which are parallel to each other are printed on the surface of the silicon wafer to be tested through laser, and the method comprises the following steps:

acquiring information of a first positioning point and information of a second positioning point on the surface of a silicon wafer to be detected;

determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point;

and if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, predicting that the overprinting of the SE line and the metal grid line of the battery piece is abnormal.

In a possible implementation manner, detecting distances between a start SE line and other SE lines of a silicon wafer to be tested based on a position of the silicon wafer to be tested and using the distances as distance test values includes:

and respectively detecting the distance between the initial SE line and other SE lines in each to-be-detected area and taking the distances as distance test values.

In one possible implementation manner, the step of detecting the distance between the start SE line and the other SE lines in each to-be-detected area as a distance test value, wherein the SE line farthest from the start SE line is used as a termination SE line, includes:

and respectively and sequentially detecting the distance between each SE line in other SE lines and the starting SE line according to the sequence gradually far away from the starting SE line, and taking the distance as a distance test value until the distance between the ending SE line and the starting SE line is detected.

In one possible implementation, sequentially detecting a distance between each of the other SE lines and the start SE line as a distance test value includes:

collecting position information corresponding to the initial position of the initial SE line;

acquiring position information of corresponding SE lines at positions sequentially far away from a starting SE line by one line spacing standard value according to the line spacing standard value between two adjacent SE lines, wherein L is X/(N-1), L represents the line spacing standard value, X represents the PT standard value, and N represents the total number of the SE lines;

determining the distance between every two adjacent SE lines according to the position information of any two adjacent SE lines;

In a possible implementation manner, the silicon wafer to be detected includes a first edge and a second edge that are opposite to each other, the at least two regions to be detected include a first region to be detected near the first edge and a second region to be detected near the second edge, and for the first region to be detected, before acquiring the position information corresponding to the start position of the start SE line, the method further includes:

collecting third position information of the first edge;

determining the position of the first edge according to the third position information;

and taking the position on the initial SE line in the first area to be detected, which is a preset distance away from the position of the first edge as an initial position.

In a possible implementation manner, the to-be-detected silicon wafer includes a first edge and a second edge that are opposite to each other, the at least two to-be-detected regions include a first to-be-detected region near the first edge, a second to-be-detected region near the second edge, and a third to-be-detected region located between the first to-be-detected region and the second to-be-detected region, and for the third to-be-detected region, before acquiring position information corresponding to a start position of the start SE line, the method further includes:

acquiring fourth position information of a third to-be-detected area close to the edge of the first to-be-detected area and fifth position information of the third to-be-detected area close to the edge of the second to-be-detected area;

determining a central line bisecting the third detection area to be detected according to the fourth position information and the fifth position information;

and determining the intersection point of the initial SE line and the middle line in the third region to be detected as an initial position.

In a possible implementation manner, the determining the position of the silicon wafer to be measured according to the information of the first positioning point and the information of the second positioning point includes:

In a possible implementation manner, the surface of the silicon wafer to be tested is further printed with an identification line parallel to the SE line by laser, and the method further includes:

if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, acquiring the information of the identification line of the silicon wafer to be tested;

and determining an SE laser machine table for carrying out laser printing on the silicon wafer to be tested according to the information of the identification line.

In a possible implementation manner, if the absolute value of the difference value between the standard distance value between the starting SE line and the other SE lines and the corresponding test distance value is smaller than or equal to the corresponding threshold value, it is predicted that the SE lines and the metal grid lines of the battery piece are overprinted normally.

In a second aspect, an electronic device is provided, the device comprising:

the acquisition assembly is used for acquiring information of a first positioning point and information of a second positioning point on the surface of the silicon wafer to be detected;

a memory storing a computer program; and

a processor operable with the computer program stored on the memory to implement the method of:

determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point;

and if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, predicting that the overprinting of the SE line and the metal grid line of the battery piece is abnormal.

The technical scheme provided by the invention at least has the following beneficial effects:

the method for predicting the overprinting abnormity of the SE line and the metal grid line of the battery piece comprises the steps of collecting information of a first positioning point and information of a second positioning point on the surface of a silicon wafer to be tested, determining the position of the silicon wafer to be tested according to the information of the first positioning point and the information of the second positioning point, detecting the distance between an initial SE line and other SE lines of the silicon wafer to be tested based on the position of the silicon wafer to be tested and using the distance as a distance test value, and if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than a corresponding threshold value, indicating that the uniformity of the SE line in a corresponding area is poor, so that the metal grid line and the SE line printed in the later period are not easy to align, and accurately predicting the overprinting abnormity of the SE line and the metal grid line of the battery piece caused by the horizontal difference of an SE laser table board. The present invention confirms the horizontal difference of the SE laser mesa by detecting the uniformity of the SE line, which enables determination of the horizontal difference of the SE laser mesa in the direction perpendicular to the SE line and parallel to the SE line.

Drawings

FIG. 1 is a schematic diagram of an SE line of a surface of a silicon wafer to be measured;

FIG. 2 is a schematic diagram of an SE line and metal gate line overprint anomaly;

FIG. 3 is a block diagram of a Micro-VU measuring instrument;

FIG. 4 is a schematic flow chart illustrating a method for predicting the overprint of SE lines and metal grid lines of a battery plate according to an embodiment of the invention;

FIG. 5 is a schematic diagram of a surface SE line, a first positioning point, a second positioning point and an identification line of a silicon wafer to be measured according to an embodiment of the present invention;

FIG. 6 is a block diagram of an electronic device in one embodiment of the invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

The doping concentration of the surface of the silicon wafer can be reduced by forming the selective emitter on the surface of the silicon wafer, and the open-circuit voltage of the crystalline silicon solar cell is improved. Illustratively, an SE laser heavy doping process is added on the basis of a battery line (grid line) of a Passivated emitter back contact battery (PERC), so that the SE line and a metal grid line of a battery piece keep a good overprinting effect, and the metal grid line and the surface of a silicon wafer can form good ohmic contact while the doping concentration of the surface of the silicon wafer is reduced.

As shown in FIG. 1, the surface of the silicon wafer is printed with mutually parallel SE lines by laser, including SE line 1, SE line 2, SE line 3, SE line 4,. cndot. cndot.1, and SE line N, aa 'represents the direction parallel to the SE lines from left to right, and bb' represents the direction perpendicular to the SE lines from top to bottom. The PT value in the aa 'direction can be measured by adopting an automatic measuring program running in the Micro-VU measuring instrument, the PT value in the bb' direction cannot be measured, and the horizontal difference of the SE laser machine table top and the laser graph distortion degree in the direction parallel to the SE line cannot be known.

If the SE line of the cell does not coincide with the metal grid line, the contact between the electrode at the non-coinciding position and the silicon wafer is poor, the series resistance is high, the ohmic contact and the current output are poor, and the area at the position is darker than other areas. As shown in fig. 2, the black part is a region where the SE line of the cell and the metal grid line are not overlapped, i.e. a non-overprinted region. Therefore, how to accurately predict the level difference of the SE laser table top and the laser pattern distortion degree parallel to the SE line direction is a problem that needs to be solved to ensure that a good overprinting effect is achieved between the metal grid lines and the SE lines during printing.

In order to solve the problem of the prior art, the embodiment of the invention provides a prediction method for overprint abnormity of an SE line and a metal grid line of a battery piece and electronic equipment.

According to the prediction method for the overprint anomaly of the SE lines and the metal grid lines of the battery piece, the Micro-VU measuring instrument is used for measuring, and as shown in figure 3, the Micro-VU measuring instrument comprises a processor, a storage and an output device which are connected through a system bus. Wherein the processor of the Micro-VU meter is configured to provide computing and control capabilities. The memory of the Micro-VU measuring instrument comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The computer program is executed by a processor to realize a prediction method of the overprint abnormity of the SE lines and the metal grid lines of the battery piece. The output device of the Micro-VU measuring instrument can be a display screen, a printer or other data output devices and the like.

In one embodiment, as shown in fig. 4, a method for predicting overprint anomalies of an SE line and a metal gate line of a battery piece is provided, the method is applied to a silicon wafer to be tested, a first positioning point, a second positioning point and a plurality of SE lines which are parallel to each other are printed on the surface of the silicon wafer to be tested through laser, and the method includes the following steps:

step S410, collecting information of a first positioning point and information of a second positioning point on the surface of the silicon wafer to be detected.

And the silicon wafer to be tested is obtained by performing laser printing on the monitoring silicon wafer with the positive surface plated with the SiNx blue film by an SE laser machine according to the uploaded pre-drawn printing plate graph.

The information of the first positioning point may include coordinates of the first positioning point for determining the position of the first positioning point, and the information of the second positioning point may include coordinates of the second positioning point for determining the position of the second positioning point. The surface of the silicon wafer to be measured can be provided with a plurality of positioning points, and two positioning points can be arbitrarily selected as a first positioning point and a second positioning point when the Micro-VU measuring instrument carries out data measurement.

When the SE lines and the metal grid lines of the battery piece are measured by the automatic measuring program of the Micro-VU measuring instrument, the Micro-VU measuring instrument collects information of a first positioning point and information of a second positioning point on the surface of the silicon chip to be measured and positions of the first positioning point and the second positioning point in order to determine the measuring range on the table top of the Micro-VU measuring instrument.

Step S420, determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point.

And the Micro-VU measuring instrument can determine the positioning point of the silicon wafer to be measured according to the information of the first positioning point and the information of the second positioning point, and further determine the measuring range on the table top of the Micro-VU measuring instrument. The measurement object of the Micro-VU measuring instrument is a plurality of mutually parallel SE lines printed on a silicon wafer to be measured through laser.

And step S430, detecting the distance between the initial SE line and other SE lines of the silicon wafer to be tested based on the position of the silicon wafer to be tested and taking the distance as a distance test value.

After the position of the silicon wafer to be measured is determined, measuring the distance between the initial SE line and other SE lines is started, as shown in FIG. 1, the SE line 1 is the initial SE line, the SE lines 2 to N are the other SE lines except the initial SE line, measuring the distance value 1 between the SE line 1 and the SE line 2, the distance value 2 between the SE line 1 and the SE line 3 and the distance value 3 between the SE line 1 and the SE line 4 until the distance value N-1 between the SE line 1 and the SE line N is measured, and taking the distance 1, the distance 2 and the distance 3- · · distance N-1 as distance test values. Alternatively, the distance value 1 between the SE lines 1 and 2, the distance value 3 between the SE lines 1 and 4, the distance value N-1 between the SE lines 1 and N, etc. may be measured selectively.

Step S440, if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, predicting that overprinting of the SE line and the metal grid line of the battery piece is abnormal.

The distance standard value is a theoretical standard distance value between corresponding SE lines on the printing plate graph, and the distance standard value corresponding to each distance value is different. For example, the distance standard value corresponding to the distance value 1 is a theoretical standard distance value between the 1 st SE line and the 2 nd SE line at corresponding positions on the printed layout, and the value is 1.284, for example. The distance standard value corresponding to the distance value 2 is a theoretical standard distance value between the 1 st SE line and the 3 rd SE line at corresponding positions on the printed layout, and is, for example, 2.568. The distance standard value corresponding to the distance value 3 is a theoretical standard distance value between the 1 st SE line and the 4 th SE line at corresponding positions on the printed layout, and for example, the value is 3.852.

And if the error is larger than a corresponding threshold value, predicting that overprinting of the SE line and the metal grid line of the battery piece manufactured by the silicon wafer to be tested or the battery piece passing through the laser table top is abnormal.

In order to avoid the situation that the distance test value is abnormal for the first time as an accidental event, the situation that misjudgment is carried out on the SE line and metal grid line overprinting abnormality of the battery piece is reduced as much as possible, and the SE line and metal grid line overprinting abnormality of the battery piece can be predicted when a limited number of abnormal distance test values occur. The number of abnormal distance test values is preferably not more than 3.

In the embodiment of the invention, the information of the first positioning point and the information of the second positioning point on the surface of the silicon wafer to be detected are collected, the position of the silicon wafer to be detected is determined according to the information of the first positioning point and the information of the second positioning point, then the distance between the initial SE line and other SE lines of the silicon wafer to be detected is detected based on the position of the silicon wafer to be detected and is used as a distance test value, if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is greater than a corresponding threshold value, the uniformity of the SE lines in a corresponding area is poor, and the metal grid lines and the SE lines printed in the later period are not easy to align, so that the SE lines and the metal grid line overprinting abnormity of the battery piece caused by the horizontal difference of the SE laser table top are accurately predicted. The present invention confirms the horizontal difference of the SE laser mesa by detecting the uniformity of the SE line, which enables determination of the horizontal difference of the SE laser mesa in the direction perpendicular to the SE line and parallel to the SE line. According to the invention, the uniformity of the SE lines in the corresponding area is detected, the level difference of the SE laser table corresponding to the corresponding area can be determined, the level difference of the whole SE laser table can be determined by detecting the uniformity of all the SE lines, and the SE lines of the battery piece and the metal grid lines can be well overprinted by adjusting the SE laser table.

In some embodiments, detecting distances between the start SE line and other SE lines of the silicon wafer to be tested as distance test values based on the position of the silicon wafer to be tested includes:

and respectively detecting the distance between the initial SE line and other SE lines in each to-be-detected area and taking the distances as distance test values.

After the Micro-VU measuring instrument detects the position of the silicon wafer to be detected, in order to ensure the accuracy of test data, the silicon wafer to be detected needs to be partitioned, and the silicon wafer to be detected is partitioned along the direction intersecting with the SE line, namely, the silicon wafer to be detected is partitioned into at least two detection areas to be detected along the direction perpendicular to the SE line, and each detection area contains the same number of SE lines. As shown in fig. 5, the silicon wafer to be tested is divided into 3 regions to be tested, which are the a1 region, the a2 region and the A3 region, and the number of SE lines in the a1 region, the a2 region and the A3 region is equal.

The number of the regions to be detected, which are divided by one silicon wafer to be detected, is related to the size of the silicon wafer to be detected, and the larger the size is, the more the number of the divided regions to be detected is, and the more accurate the data measured by the Micro-VU measuring instrument is.

The distance between the start SE line and other SEs in each to-be-detected region is detected as a distance test value, and the detection method is the same as that in step S430, and is not described herein again.

In some embodiments, the SE line farthest from the start SE line is used as the end SE line, and the distance between the start SE line and the other SE lines in each to-be-detected area is respectively detected and used as the distance test value, including:

As shown in fig. 1, SE line 1 is a start SE line, and SE line N is a stop SE line. In order of gradually moving away from the starting SE line, i.e. in the bb' direction, the distance between SE line 2 and SE line 1 is detected as a distance test value, the distance between SE line 3 and SE line 1 is detected as a distance test value, and the distance between SE line 4 and SE line 1 is detected as a distance test value, until the distance between SE line N and SE line 1 is detected as a distance test value.

It should be noted that, when measuring the distance test value, if the upper edge position of the starting SE line is measured, the remaining SE lines are also measured from the upper edge position; if the lower edge position of the starting SE line is measured, the rest SE lines are measured from the lower edge position, so that the increase of the difference value caused by the fact that the distance test value contains the width of the SE line due to the inconsistency of the starting position and the ending position of the measurement is avoided, and the prediction result is more accurate. For example, the distance between the upper edge of the SE line 2 and the upper edge of the SE line 1 is detected as a distance test value. Alternatively, the distance between the lower edge of the SE line 2 and the lower edge of the SE line 1 is detected as a distance test value.

In some embodiments, sequentially detecting the distance between each of the other SE lines and the start SE line as a distance test value includes:

collecting position information corresponding to the initial position of the initial SE line;

determining the distance between every two adjacent SE lines according to the position information of any two adjacent SE lines;

The collection assembly of the Micro-VU measuring instrument determines the position of the SE line by acquiring the coordinates of the point, and the collection assembly can be a camera assembly or a microscope. When the collection assembly of the Micro-VU measuring instrument identifies the SE line position, the collection assembly has a certain identification range, so that when the collection assembly of the Micro-VU measuring instrument moves down by one line spacing standard value, even if the actual spacing of the SE lines on the silicon wafer to be measured is not equal to the standard spacing of the SE lines, the Micro-VU measuring instrument can still measure the line spacing between the two SE lines.

Wherein, the line spacing standard value is determined according to L ═ X/(N-1), X represents PT standard value, and N represents the total number of SE lines. The PT standard value is a distance value between an initial SE line and a final SE line in the printed layout.

The position information corresponding to the starting position of the starting SE line comprises the coordinates of points on the starting SE line, and the position information of the corresponding SE line collected at a position far away from the starting SE line by a line spacing standard value comprises the coordinates of the points of other SE lines except the starting SE line. The position information corresponding to the initial position of the SE line is automatically captured by a collection assembly of the Micro-VU measuring instrument, the position of the upper edge of the initial SE line on the silicon wafer to be measured is identified, the line spacing standard value is automatically translated downwards along the direction perpendicular to the SE line according to the line spacing standard value preset by an automatic measuring program, then the position information corresponding to the position of the 2 nd SE line is automatically captured, the position of the upper edge of the 2 nd SE line is identified, and the spacing value between the initial SE line and the 2 nd SE line is automatically output.

Then automatically translating a line spacing standard value downwards, automatically capturing and identifying the position of the upper edge of the 3 rd SE line, and automatically outputting the sum of the spacing value between the starting SE line and the 2 nd SE line and the spacing value between the 2 nd SE line and the 3 rd SE line; the Micro-VU measuring instrument automatically and sequentially translates one line spacing standard value downwards each time, automatically catches the upper edge position of the next SE line, automatically outputs the accumulated value of the spacing values of every two adjacent SE lines between the SE lines which are caught and identified this time from the initial SE line distance until the position of the SE line which is caught and identified is stopped, and outputs the accumulated value of the spacing values between every two adjacent SE lines in all the SE lines on the silicon wafer to be measured.

As shown in FIG. 1, the 1 st SE line is the initial SE line, the distance value L11 between the 1 st SE line and the 2 nd laser line is measured, the distance value L11 is the 1 st distance test value, and the Micro-VU measuring instrument outputs L11. The Micro-VU gauge then measures the spacing value L12 between the 2 nd and 3 rd SE lines, at which time, the spacing value L11 and the spacing value L12 are added to obtain the 2 nd distance test value, which is denoted as L11+ L12, and the output of the Micro-VU gauge is L11+ L12. The Micro-VU measuring instrument then downwards measures a spacing value L13 between the 3 rd SE line and the 4 th SE line, at the moment, the spacing value L11, the spacing value L12 and the spacing value L13 are accumulated to obtain a3 rd distance test value which is represented as L11+ L12+ L13, the Micro-VU measuring instrument outputs a value L11+ L12+ L13, and the like.

The measurement method is followed until the end of the last 1 SE line is measured, and N-1 distance test values are obtained. Specifically, each distance test value can be calculated by the following formula (1);

wherein M is_iMeans the ith distance test value, i belongs to [1, N-1 ]]，m_jThe distance between the jth SE line and the j +1 th SE line is indicated, and N refers to the total number of the SE lines on the silicon wafer to be tested.

In some embodiments, the silicon wafer to be detected includes a first edge and a second edge which are opposite to each other, the at least two regions to be detected include a first region to be detected near the first edge and a second region to be detected near the second edge, and for the first region to be detected, before acquiring the position information corresponding to the start position of the start SE line, the method further includes:

collecting third position information of the first edge;

determining the position of the first edge according to the third position information;

and taking the position on the initial SE line in the first area to be detected, which is a preset distance away from the position of the first edge as an initial position.

As shown in fig. 5, the silicon wafer to be detected includes a first edge F1 and a second edge F2 which are opposite, and the at least two regions to be detected include a first region to be detected a1 which is close to the first edge F1, a second region to be detected a2 which is close to the second edge F2, and a third region to be detected A3 which is located between the first region to be detected a1 and the second region to be detected a 2.

In order to locate the abnormal positions of all regions to be detected when overprinting is abnormal, partial regions of a silicon wafer to be detected are divided into regions to be detected, and the rest regions are used as regions not to be detected.

And for the first area to be detected, acquiring third position information of the first edge before acquiring position information corresponding to the starting position of the starting SE line, wherein the third position information comprises coordinates of a point of the first edge. The position of the first edge is determined based on the coordinates of the points of the first edge, and the position on the start SE line in the first region to be detected at a predetermined distance from the position of the first edge is taken as a start position, such as point B1, and the position on the end SE line at a predetermined distance from the position of the first edge is taken as an end position, such as point C1. And the area corresponding to the preset distance is an undetected area.

And aiming at the second detection area to be detected, acquiring the coordinates of the point of the second edge before acquiring the position information corresponding to the initial position of the initial SE line. And determining the position of the second edge according to the coordinates of the point of the second edge, taking the position which is on the start SE line in the second detection area and is away from the position of the second edge by a preset distance as a starting position, such as a point B3, and taking the position which is on the end SE line and is away from the position of the second edge by a preset distance as an ending position, such as a point C3. The preset distance can be selected to be 3mm, 2mm, 1mm and the like, and the proper preset distance is selected according to actual requirements under the condition of saving operation time.

In some embodiments, the silicon wafer to be detected includes a first edge and a second edge which are opposite to each other, the at least two regions to be detected include a first region to be detected near the first edge, a second region to be detected near the second edge, and a third region to be detected between the first region to be detected and the second region to be detected, and for the third region to be detected, before acquiring the position information corresponding to the start position of the start SE line, the method further includes:

determining a central line bisecting the third detection area to be detected according to the fourth position information and the fifth position information;

and determining the intersection point of the initial SE line and the middle line in the third region to be detected as an initial position.

As shown in fig. 5, the fourth position information includes coordinates of a point of a certain edge of the third area to be detected A3, for example, coordinates of a point of the edge F3, and the fifth position information includes coordinates of a point of the other edge of the third area to be detected A3, for example, coordinates of a point of the edge F4. Determining the edge position of the third detection area A3 according to the fourth position information and the fifth position information, identifying a central line G bisecting the third detection area, wherein the central line vertically penetrates through the start SE line and the end SE line, taking an intersection B2 of the start SE line and the central line G in the third detection area as a start position, and taking an intersection C2 of the end SE line and the central line G in the third detection area A3 as an end position.

In some embodiments, the determining the position of the silicon wafer to be measured according to the information of the first positioning point and the information of the second positioning point includes:

As shown in fig. 5, the first positioning point D1 and the second positioning point D2 are both located between two adjacent SE lines and on the same horizontal line, a central point between the two positioning points is determined according to the positions of the first positioning point D1 and the second positioning point D2, and the position of the silicon wafer to be measured is calibrated according to the central point.

In some embodiments, the surface of the silicon wafer to be tested is further printed with an identification line parallel to the SE line by laser, and the method further includes:

and determining an SE laser machine table for carrying out laser printing on the silicon wafer to be tested according to the information of the identification line.

The information of the identification line E comprises coordinates and identification characteristics of points of the identification line, the identification line can be used as a unique identification of the SE laser machine, abnormal machines can be quickly checked according to the identification line when the field manufacturing process is abnormal, and the abnormal machines can be timely locked after the abnormality of the photovoltaic module end is fed back.

If the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, the SE line on the silicon wafer to be tested is abnormal in the horizontal direction, the overprinting abnormality of the SE line and the metal grid line of the battery piece is predicted, the information of the identification line of the silicon wafer to be tested is collected, and the SE laser machine for performing laser printing on the silicon wafer to be tested is determined to be an abnormal SE laser machine according to the information of the identification line.

The method for distinguishing the SE laser machine table by the identification line can also be used for distinguishing the line of the printing machine table by back laser grooving, and is also convenient for locking the printing machine table in time after the abnormality of the photovoltaic module end is fed back, so that the abnormality investigation range is reduced.

In some embodiments, if the absolute value of the difference between the standard distance value between the starting SE line and the other SE lines and the corresponding test distance value is less than or equal to the corresponding threshold, it is predicted that the SE lines and the metal grid lines of the battery piece are overprinted normally.

If the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is smaller than or equal to the corresponding threshold value, the SE line spacing uniformity is good, and the phenomenon that the SE line and the metal grid line are printed black due to abnormal SE line spacing uniformity is avoided. Therefore, the SE lines and the metal grid lines of the battery piece are predicted to be overprinted normally.

Wherein the threshold value can be determined by: according to the overprint black position of the field process, measuring distance test values between the initial SE line and other SE lines according to the method recorded in the steps S430 and S440, deriving all the distance test values, comparing each distance test value with the distance standard value of the printed layout, and drawing. And selecting a threshold value according to the actual test result of each machine station on site and the overprinting result of the SE line and the metal grid line.

In one embodiment, when the SE line and metal grid line overprinting abnormality occurs in the finished battery piece feedback, the SE line and metal grid line overprinting abnormality piece is left, the corresponding SE laser machine station is confirmed according to the identification line, the normal laser pattern is used for printing the blue diaphragm on the four table surfaces of the SE laser machine station corresponding to the SE line and metal grid line overprinting abnormality piece, the Micro-VU measuring instrument is used for executing the methods of the steps S410 to S440, whether the laser table surface is abnormal or not is judged, if the abnormality occurs, the checking, confirming and adjusting are carried out, and the machine recovery production is carried out after the laser pattern is adjusted to be normal.

In one embodiment, after the mesa of the SE laser stage is replaced or the level of the mesa is adjusted to improve the PT value of laser of a certain mesa, a blue diaphragm is printed on the adjusted laser mesa using a normal pattern, the Micro-VU measuring instrument is used to execute the above steps S410 to S440, whether the laser mesa is abnormal or not is determined, if the laser mesa is abnormal, the adjustment is checked, and the laser pattern is adjusted to be normal, and then the laser processing is repeated.

It should be understood that, although the steps in the flowchart of fig. 4 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 4 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

In one embodiment, an electronic device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 6. The electronic device comprises a processor, a memory, a network interface, a display screen and an input device which are connected through a system bus. Wherein the processor of the electronic device is configured to provide computing and control capabilities. The memory of the electronic equipment comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The network interface of the electronic device is used for connecting and communicating with an external terminal through a network. The computer program is executed by a processor to realize a method for prejudging the SE-PERC battery overprint abnormity. The display screen of the electronic equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the electronic equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on the shell of the electronic equipment, an external keyboard, a touch pad or a mouse and the like.

Those skilled in the art will appreciate that the configuration shown in fig. 6 is a block diagram of only a portion of the configuration associated with aspects of the present invention and is not intended to limit the computing devices to which aspects of the present invention may be applied, and that a particular computing device may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.

In one embodiment, an electronic device is provided, which includes an acquisition component for acquiring information of a first positioning point and information of a second positioning point on a surface of a silicon wafer to be measured, wherein the acquisition component may be a camera component or a structure similar to a microscope;

a memory storing a computer program; and

a processor operable with the computer program stored on the memory to implement the method of:

determining the position of the silicon wafer to be detected according to the information of the first positioning point and the information of the second positioning point; detecting the distance between the initial SE line and other SE lines of the silicon wafer to be tested based on the position of the silicon wafer to be tested and taking the distance as a distance test value; and if the absolute value of the difference value between the distance standard value between the initial SE line and other SE lines and the corresponding distance test value is larger than the corresponding threshold value, predicting that the overprinting of the SE line and the metal grid line of the battery piece is abnormal.